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Journal articles on the topic 'Polishing Pad'

Author: Grafiati

Published: 4 June 2021

Last updated: 15 February 2022

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1

Hirose, Kenji, and Toshiyuki Enomoto. "Optimization of Double-Sided Polishing Conditions to Achieve High Flatness: Consideration of Relative Motion Direction." International Journal of Automation Technology 3, no. 5 (2009): 581–91. http://dx.doi.org/10.20965/ijat.2009.p0581.

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Silicon (Si) wafers are the most commonly used substrates of semiconductor devices. The device design rule is miniaturization, and the device chip size is being increased to improve device integration, requiring that Si wafers be manufactured with higher flatness and larger diameters. The polishing used as a finishing process of Si wafers, however, has a serious problem; it is very difficult to set the appropriate conditions for polishing the Si wafer while wearing the polishing pad stably to high flatness. In our previous work, a method of optimizing polishing conditions based on kinematical

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2

Tso, Pei Lum, and Yang Liang Pai. "Amorphous Diamond Dresser for CMP Fixed Abrasives Pad." Key Engineering Materials 329 (January 2007): 157–62. http://dx.doi.org/10.4028/www.scientific.net/kem.329.157.

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The primary consumables in chemical mechanical polishing (CMP) are the polishing pad and slurry. The polishing pad significantly influences the stability of the polishing process and the cost of consumables (CoC). Usually a diamond pad conditioner is used to scrap off the polishing debris from the pad top. Recently, an alternative planarization process can be achieved by polishing with a "fixed abrasive pad" (FAP). In order to dress bumps on FAP, this paper use an amorphous diamond, a diamond-like carbon deposited by cathode arc system as the dresser for FAP. The amorphous diamond can produce

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3

Li, Mao, Yong Wei Zhu, Jun Li, Jian Feng Ye, and Ji Long Fan. "Wear of Polishing Pad and Pattern Optimization of Fixed Abrasive Pad." Advanced Materials Research 126-128 (August 2010): 82–87. http://dx.doi.org/10.4028/www.scientific.net/amr.126-128.82.

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The polishing pad plays a significant role in the Chemical Mechanical Polishing (CMP) process and its wear influences the surface accuracy of the polished wafer. A new polishing pad wear model is introduced and the law of pad wear along the pad radius is discussed, thus a new FAP with optimized pattern is designed and prepared in order. The flatness of the wafer lapped with a uniform pattern pad and that with an optimized pattern was compared. Results show that the PV value of the latter is lower that of the former.

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4

Li, Mao, Yong Wei Zhu, Jun Li, and Kui Lin. "Modeling of Polishing Pad Wear in Chemical Mechanical Polishing." Key Engineering Materials 431-432 (March 2010): 318–21. http://dx.doi.org/10.4028/www.scientific.net/kem.431-432.318.

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The polishing pad’s wear influences the surface accuracy of the polished wafer. A new polishing pad wear model is established using the idea of Finite Element Analysis (FEA) and the effect of polishing parameters on the wear of polishing pad is discussed.

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5

Tsai, Hung Jung, and Chia Hao Chuang. "Thermal Effects of Mechanical Polishing and Conditioning on Polishing Pads." Key Engineering Materials 642 (April 2015): 120–24. http://dx.doi.org/10.4028/www.scientific.net/kem.642.120.

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Polishing process is a primary technique for planarization of material surface in manufacture fabrication. The pad structure and its material properties are important to determine the polish rate and planarity that can be achieved by the polishing process. Besides, the pad conditioning is used to regenerate the surface of the polishing pad surface by breaking up the glazed areas. Because the polishing and pad conditioning mechanism is inadequately understood and because higher levels of pad polishing performance are desired, the investigation of experiment becomes more important.In this paper,

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6

Sato, Ryunosuke, and Yoshio Ichida. "Study on Polishing Characteristics of Pyramidal Structured Polishing Pad." International Journal of Automation Technology 13, no. 2 (2019): 237–45. http://dx.doi.org/10.20965/ijat.2019.p0237.

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We conducted a polishing test to clarify the change in polishing characteristics resulting from the wear of a pyramidal-structured polishing tool, and discuss the polishing mechanism unique to the pyramidal-structured polishing pad. When the pyramidal-structured polishing pad is used for polishing, there exists an initial polishing stage in which the removal rate is high but the finished surface is rough; followed by a steady-state polishing stage in which the wear rate is low, removal rate is stable, and a high-quality finish is obtained. The true polishing pressure is constant in the steady-

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7

Tsai, Sung Lin, Fuang Yuan Huang, Biing Hwa Yan, and Yao Ching Tsai. "A New Polishing Pad of EVA-Adhesive-Dressed-with-SiC-Grits Polishing Face and its Applications in Silicon Wafer Polishing." Advanced Materials Research 126-128 (August 2010): 539–44. http://dx.doi.org/10.4028/www.scientific.net/amr.126-128.539.

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This paper presents a new polishing pad with polishing silicon surface composed of a layer of Ethylene-vinyl acetate (EVA) adhesive pad coated with SiC grits. A set of polishing parameters: coating SiC grit size, concentration of SiC grit in slurry, polishing load, polishing wheel turning speed, and absorption time of polishing pad were identified with the Taguchi Methods for optimum polishing effect in terms of roughness of polished silicon surface. A surface roughness of 0.026 μm Ra can be obtained with the following values: grit size at 1.2 μm (both coated on pad and mixed in slurry), conce

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8

Kakinuma, Yasuhiro, Singo Takezawa, Tojiro Aoyama, Katsutoshi Tanaka, and Hidenobu Anzai. "Electric Field-Assisted Glass Polishing Using Electro-Rheological Gel Pad." Advanced Materials Research 76-78 (June 2009): 319–24. http://dx.doi.org/10.4028/www.scientific.net/amr.76-78.319.

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. A polishing process, which is the final process in manufacturing optical elements, takes a long time and often depends on the experience and special skills. Development of a skill-less polishing technology and automation of its process, therefore, has been required. One of the most promising polishing technologies is Field-assisted Fine Finishing (FFF). In this study, an Electro-rheological Gel (ERG) polishing pad with one-sided patterned electrodes is developed to polish insulator materials and, moreover, a novel electric-field-assisted polishing technology for glass polishing is proposed a

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9

MURATA, Junji, Yasuhiro TANI, Yu ZHANG, and Nobuyuki NOMURA. "S133013 Advanced polishing technology using epoxy resin polishing pad." Proceedings of Mechanical Engineering Congress, Japan 2013 (2013): _S133013–1—_S133013–3. http://dx.doi.org/10.1299/jsmemecj.2013._s133013-1.

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10

Tso, Pei Lum, Zhe Hao Huang, Sheng Wei Chou, and Cheng Yi Shih. "Study on the CMP Pad Life with its Mechanical Properties." Key Engineering Materials 389-390 (September 2008): 481–86. http://dx.doi.org/10.4028/www.scientific.net/kem.389-390.481.

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The primary consumables in chemical mechanical polishing (CMP) are the polishing pad and the slurry. The polishing pad significantly influences the stability of the polishing process and the cost of consumables (CoC). During the polishing process, a diamond dresser must be frequently employed to remove the debris to prevent accumulation, a process known as pad conditioning. In this paper, we investigated the physical properties of the CMP pad such as compressibility, thickness, and surface roughness. The difference between new and used pads has been studied. Conclusively, conditioning via a di

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11

Lou, Chun Lan, Hai Yan Di, Qiang Fang, Tao Kong, Wei Feng Yao, and Zhao Zhong Zhou. "Study on Groove Shape of CMP Polishing Pad: A Review." Advanced Materials Research 497 (April 2012): 278–83. http://dx.doi.org/10.4028/www.scientific.net/amr.497.278.

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In the chemical mechanical polishing process (CMP) ，the groove shape of polishing pad is one of the most critical elements that directly influences the quality and efficiency of CMP. This review paper describes the basic patterns of groove shape and that the patterns shape of polishing pad how to effect on quality and efficiency of CMP. The effect comparison between various sorts of groove shape and their effects on polishing is described. It is intended to help reader to gain a more comprehensive view on groove shape of polishing pad, and to be instrumental for research and development new gr

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12

Guo, Zhi Xue, Jing Zhai, Hui Zhang, and Qing Zhong Li. "The Effect of Speed Matching on the CMP Uniformity." Advanced Materials Research 189-193 (February 2011): 4154–57. http://dx.doi.org/10.4028/www.scientific.net/amr.189-193.4154.

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In the chemical mechanical polishing process, the relationship of relative motion of polishing pad and polishing head plays very important role for CMP quality. This paper established the mathematical model in order to investigate the relative motion of polishing pad and polishing head. It was found that the speed ratio of polishing pad and polishing head shows great influence on the CMP uniformity. And when the value of speed ratio of relative rotation approaches 1.23, the distribution of abrasives’ trajectories is close and uniform. Theoretically, the surface quality of workpiece is better.

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13

Zhang, Yun He, Jing Lu, Hui Huang, and Xi Peng Xu. "Effect of Fabrication Conditions on Ultra-Fine Abrasive Polishing Pad." Advanced Materials Research 565 (September 2012): 302–6. http://dx.doi.org/10.4028/www.scientific.net/amr.565.302.

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Considering the grit aggregation of fixed abrasive and the environmental pollution of free abrasive machining tools, a kind of ultra-fine abrasive polishing pad was fabricated by means of sol-gel technology. The effects of drying method, gel reaction time, sodium alginate concentration and pad thickness which determine the property of the polishing pad were respectively investigated. And the polishing pad fabricated under the optimized condition was utilized to polish silicon wafer on a nano-polishing machine to evaluate the tool performance.

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14

Zheng, Di, Yong Jiang Yu, Xian Hua Zhang, et al. "Effect of Shape and Size of Polishing Pad on Material Removal Characteristic." Applied Mechanics and Materials 101-102 (September 2011): 1014–18. http://dx.doi.org/10.4028/www.scientific.net/amm.101-102.1014.

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The objective of this paper is to investigate the effect of shape and size of polishing pad on the material removal characteristics in the NC polishing. The material removal model was established based on Preston equation. The law of the effect of shape and size of polishing pad on the model was simulated. Experiments were carried out. Results showed that both of the shape and size of polishing pads influence the shape of material removal curves, polishing efficiency, and surface roughness. The amount of removed material increases with the increasing of size of polishing pad.

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15

Uneda, Michio, Yuki Maeda, Ken Ichi Ishikawa, et al. "Effect of Pad Surface Asperity on Removal Rate in Chemical Mechanical Polishing." Advanced Materials Research 497 (April 2012): 256–63. http://dx.doi.org/10.4028/www.scientific.net/amr.497.256.

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In a chemical mechanical polishing (CMP) process, the removal rate is affected by the actual contact conditions between the wafer and the polishing pad. The polishing pad is one of the most important consumable materials: when the wafer is polished, the pad surface asperity changes. Further, the polishing pad surface asperity has a substantial influence on the actual contact conditions. Therefore, measurement and quantitative evaluation methods for the pad surface asperity have been proposed by various research institutes. We have developed a novel measurement and quantitative evaluation metho

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16

Horng, Jeng-Haur, Yeau-Ren Jeng, and Chun-Liang Chen. "A Model for Temperature Rise of Polishing Process Considering Effects of Polishing Pad and Abrasive." Journal of Tribology 126, no. 3 (2004): 422–29. http://dx.doi.org/10.1115/1.1705665.

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The contact temperature plays an important role in the polishing process, which essentially is a surface contact abrasion process. This paper reports a contact temperature model to predict the temperature rise of both the abrasive-workpiece and pad-workpiece interfaces in a polishing process. In this analysis, the forces acting on an abrasive particle and an asperity of the pad are derived from a mechanistic analysis of abrasive-workpiece and pad-workpiece contact. Our results elucidate that polishing with a rigid, smooth plate is a special case of our purposed model. Theoretical predictions i

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17

Lu, Yu Shan, Zhi Hui Kou, Jun Wang, and Cheng Yi Zhao. "Design and Fabrication on the Electroplating Polishing Pad with Phyllotactic Pattern." Advanced Materials Research 472-475 (February 2012): 2568–73. http://dx.doi.org/10.4028/www.scientific.net/amr.472-475.2568.

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The surface texture of polishing pad is a key factor which determines the performance of polishing pad, and by altering the geometrical pattern of polishing pad surface, the surface texture of polished workpiece can be improved. In this paper, based on phyllotaxis theory in biology, the polishing pad with phyllotactic pattern has been designed and the effects of phyllotactic parameters on the surface texture of polishing pad have been discussed. Lastly, the polishing pads with phyllotactic pattern have been made with lithography and composite plating technology, and the influence of correlativ

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18

Liu, Juan, Yi Qing Yu, and Xi Peng Xu. "Fabrication of Ultra-Fine Abrasive Polishing Pads by Gel Technique." Materials Science Forum 532-533 (December 2006): 468–71. http://dx.doi.org/10.4028/www.scientific.net/msf.532-533.468.

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In this paper, an experimental study was carried out to fabricate a new kind of ultra-fine abrasive polishing pad by means of gel technology. The polishing pad was then used to polish silicon wafer on a nano-polishing machine. Optical microscope and ZYGO 3D surface analyzer were applied to observe the surface morphologies of the silicon wafer. Meanwhile, surface morphology of ultra-fine abrasive polishing pad was observed by ESEM. No obvious gathering of ultra-fine grains were found on the ultra-fine abrasive pad. The surface roughness (Ra) of the silicon wafer was reduced to 0.3nm after being

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19

Hu, Guang Qiu, Jing Lu, Jian Yun Shen, and Xi Peng Xu. "Surface Characterization of Silicon Wafers Polished by Three Different Methods." Key Engineering Materials 487 (July 2011): 233–37. http://dx.doi.org/10.4028/www.scientific.net/kem.487.233.

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The surface roughness and surface morphology of silicon wafers polished by three different polishing methods were analyzed in this paper. A polishing pad was prepared by means of sol-gel technology as semi-fixed abrasive tool. An electroplated polishing pad was chosen as fixed abrasive tool. And a polishing cloth was chosen as free abrasive tool. The results showed that the surface of silicon wafer polished by the sol-gel polishing pad was superior to the other two. It was easy to get mirror effect with few scratches while the free abrasive and fixed abrasive got lots of scratches on 23silicon

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20

Zhou, Hai, and Zi Guo Zuo. "Analysis and Experimental Research on Chemical Mechanical Polishing Flow Field." Advanced Materials Research 314-316 (August 2011): 1176–79. http://dx.doi.org/10.4028/www.scientific.net/amr.314-316.1176.

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By the analysis of chemical mechanical polishing flow field about substrate, it is found that the closer to the center of the substrate film, the polishing rate is more uniform; at the edge it isn’t; at the same time near the rotation axis of polishing pad, the polishing rate is little, while far away from the axis the rate is lager. It’s needed to choose appropriate ration on the speed of polish pad and the speed of substrate, in order to obtain a substrate with better flatness. The change on the speed of polishing pad affects polishing rate larger than the change of substrate’s. With PLM-2 p

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21

Biddut, A. Q., Liang Chi Zhang, and Y. M. Ali. "Effect of Polishing Time and Pressure on Polishing Pad Performance." Key Engineering Materials 389-390 (September 2008): 510–14. http://dx.doi.org/10.4028/www.scientific.net/kem.389-390.510.

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This paper experimentally investigates the effect of time and pressure on the condition of polishing pads and the material removal rate (MRR) of single crystal silicon. It was found that as the pad deteriorates with time, MRR decreases. Surfaces with a required quality can only be achieved before the texture deterioration reaches a critical limit. At a higher pressure, 25 kPa, deterioration is slower, and the effective life of pads and MRR is enhanced.

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22

Lu, Y., Y. Tani, and K. Kawata. "Proposal of New Polishing Technology without Using a Polishing Pad." CIRP Annals 51, no. 1 (2002): 255–58. http://dx.doi.org/10.1016/s0007-8506(07)61511-x.

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23

Tsai, Ming-Yi, Chiou-Yuan Chen, and Ying-Rong He. "Polishing Characteristics of Hydrophilic Pad in Chemical Mechanical Polishing Process." Materials and Manufacturing Processes 27, no. 6 (2012): 650–57. http://dx.doi.org/10.1080/10426914.2011.602785.

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24

Du, Shi Wen, Yong Tang Li, Jian Jun Song, and Hui Ping Qi. "Wafer Non-Uniformity Analysis during Chemical Mechanical Polishing Based on Finite Element Method." Advanced Materials Research 160-162 (November 2010): 1518–23. http://dx.doi.org/10.4028/www.scientific.net/amr.160-162.1518.

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A contact-mechanics-based finite model for Cu/ low-k chemical mechanical polishing is presented. 2D axisymmetric quasi-static model for chemical mechanical polishing which includes four-layer structure: Si, low-k, Copper and polishing pad is established. The mechanical response at the interface between the silicon, low-k, copper, and pad is simulated under the loading of the chemical mechanical polishing. The effect of slurry is simplified as the friction force reacted onto both the copper and the polishing pad in the finite element model. Down pressure, status of slurry and the elastic modulu

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25

Liu, Juan, and Xi Peng Xu. "Influences of Machining Parameters on Silicon Wafer Polished with Gel-Coupled Ultra-Fine Abrasive Polishing Pads." Key Engineering Materials 359-360 (November 2007): 279–84. http://dx.doi.org/10.4028/www.scientific.net/kem.359-360.279.

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In this paper, a newly developed ultra-fine abrasive polishing pad by gel technology was adopted to polish silicon wafer on a nano-polishing machine. In order to evaluate the machining performances of the polishing pad, the influences of abrasive sizes, abrasive concentration and polishing parameters (pressure, rotating speed and machining time) on the silicon wafer were investigated respectively. Optical microscope and ZYGO 3D surface analyzer were applied to examine the surface morphologies and surface roughness of the polished silicon wafer respectively. The experimental results showed that

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26

Hooper, B. J., G. Byrne, and S. Galligan. "Pad conditioning in chemical mechanical polishing." Journal of Materials Processing Technology 123, no. 1 (2002): 107–13. http://dx.doi.org/10.1016/s0924-0136(01)01137-2.

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27

Suratwala, Tayyab, Rusty Steele, Michael Feit, Richard Desjardin, and Dan Mason. "Convergent Pad Polishing of Amorphous Silica." International Journal of Applied Glass Science 3, no. 1 (2012): 14–28. http://dx.doi.org/10.1111/j.2041-1294.2012.00080.x.

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28

Lu, Yu Shan, Jun Wang, Nan Li, Tian Zhang, Min Duan, and Xue Ling Xing. "Material Removal Distribution of Chemical Mechanical Polishing by the Bionic Polishing Pad with Phyllotactic Pattern." Solid State Phenomena 175 (June 2011): 87–92. http://dx.doi.org/10.4028/www.scientific.net/ssp.175.87.

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In order to make the material removal distribution on polishing silicon surface more non-uniform during the chemical mechanical polishing (CMP), a kind of the bionic polishing pad with phyllotactic pattern has been designed based on phyllotaxis theory, and by polishing experiment, the effects of the phyllotaxis parameters on material removal distributions on silicon wafer surfaces are investigated. The research results show that the material removal distribution of polishing silicon surface more uniform and the edge rounding of polishing wafer can be decreased when the phyllotaxis parameters o

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29

Kimura, Keiichi, Panart Khajornrungruang, Takahisa Okuzono, and Keisuke Suzuki. "Evaluation Method Applying Fourier Transform Analysis for Conditioned Polishing Pad Surface Topography." International Journal of Automation Technology 5, no. 2 (2011): 173–78. http://dx.doi.org/10.20965/ijat.2011.p0173.

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The Fourier transform analysis is proposed to quantitatively evaluate the 3D surface topography of Chemical Mechanical Polishing (CMP) pads used for flattening and smoothing processed semiconductor substrates. The conditioned polishing pad surfaces have a wide range of irregular topographies ranging from topographies of a sub-micrometer to those of a hundredmicrometer order. Hence, a Confocal Laser Scanning Microscope (CLSM), which can provide nanometer resolution in wide range of lateral directions by means of linear encoded mechanical stage translation, was employed to obtain numerical data

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30

Liu, Zhi Xiang, Jian Guo Yao, Song Zhan Fan, and Jian Xiu Su. "Study on the Preparation Technology of Fixed Abrasive Polishing Pad in Chemical Mechanical Polishing." Applied Mechanics and Materials 602-605 (August 2014): 485–88. http://dx.doi.org/10.4028/www.scientific.net/amm.602-605.485.

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According to the shortcomings of the traditional free abrasive chemical mechanical polishing (CMP), in recent years, the fixed abrasive chemical mechanical polishing (FA-CMP) technology is proposed. It is a new planarization technology developed on the basis of the traditional CMP. Pad is an important and dispensable part in FA-CMP. The cost and quality of FA-CMP pad are determined by the preparation technology. In order to study the FA-CMP pad of the low cost and high quality, in this paper, by reading a lot of literature, 5 kinds of preparation technology of FA-CMP pad are analyzed. Study re

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31

Hu, Qing, De Fu Liu, and Wen Bing Zou. "Material Removal Model and Experimental Analysis in the CMP of Si-Based Fiber Array." Advanced Materials Research 941-944 (June 2014): 2345–65. http://dx.doi.org/10.4028/www.scientific.net/amr.941-944.2345.

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Based on statistics theory and contact theory, a material removal model for predicting polishing quality in chemical-mechanical polishing (CMP) of multi-material surface is developed. The contacts of pad-workpiece and pad-particle-workpiece are characterized by the elastic–plastic contact mechanism. The material removal is considered to be the sum of the contributions from two movement modes of particles. Within the model, linear material removal volume (LMRV) can be determined as a function of the interactions of workpiece, pad and slurry. The model also determines the relationship between LM

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32

Sun, Yu Li, Dun Wen Zuo, W. Z. Lu, Y. W. Zhu, and J. Li. "Temperature Distribution of IFA Polishing Single Silicon Wafer." Advanced Materials Research 135 (October 2010): 73–78. http://dx.doi.org/10.4028/www.scientific.net/amr.135.73.

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The ice fixed abrasives (IFA) polishing is a potential polishing process in the semiconductor industry to realize superior surface finish and planarity for semiconductor wafers. The key question in IFA polishing is how to keep suitable ambient temperature and melting rate in production process in order to avoid premature failure of the IFA pad. In this paper, effects of ambient temperature (T), pressure in cylinder (Pc), rotary speed of IFA pad (v) and eccentricity of pressure head (e) on temperature distribution and melting rate of the IFA pad are researched. The results show that T should be

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33

Qin, N., Dong Ming Guo, Ren Ke Kang, and Feng Wei Huo. "Effect of Conditioning Parameters on Surface Non-Uniformity of Polishing Pad in Chemical Mechanical Planarization." Key Engineering Materials 389-390 (September 2008): 498–503. http://dx.doi.org/10.4028/www.scientific.net/kem.389-390.498.

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The calculating model of surface non-uniformity of polishing pad and the kinematical model between polishing pad and conditioner are initially established. Then the effects of several conditioning parameters were investigated by using the two models. The results of simulation and calculation show that the width ratio of diamond band of conditoner and the rotation speed at the same speed ratio between pad and conditioner have little effect on the surface non-uniformity of polishing pad, while at high non-integer rotation speed ratio, the surface non-uniformity of polishing pad is better than th

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34

Tso, Pei Lum, Shi Guo Liu, and J. C. Wang. "The Development of an Ultrasonic Head for CMP Pad Conditioning." Advanced Materials Research 500 (April 2012): 275–80. http://dx.doi.org/10.4028/www.scientific.net/amr.500.275.

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The technology of ultrasonic assisted machining has been successfully used in many machining processes recently. Conditioning in the CMP not only can extending the life of the polishing pad but also improve process stability. In this paper we develop a brand new conditioning process with ultrasonic assisted conditioning UAC head for chemical mechanical polishing CMP process. The slurry came from inside the polishing spindle and had an independent cyclic system. As a result, this UAC device can remove polishing debris 4-6 times faster than conventional conditioning process. This conditioning pr

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35

Hu, Guang Qiu, Jing Lu, and Xi Peng Xu. "Polishing Silicon Wafers with the Nanodiamond Abrasive Tools Prepared by Sol-Gel Technique." Key Engineering Materials 496 (December 2011): 1–6. http://dx.doi.org/10.4028/www.scientific.net/kem.496.1.

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In this paper, in order to avoid aggregate of nanodiamonds and reduce the damage problem caused by the hard abrasives during polishing, a kind of ultra-fine nanodiamond abrasive polishing pad was fabricated by means of sol-gel technology. The polishing pad was then used to polish silicon wafer on a nano-polishing machine. The surface morphologies and roughness were measured by both optical microscope and atomic force microscope (AFM). It is found that it was easy to machine the silicon wafer to mirror surface after polishing with the nanodiamond pad. And the surface roughness of the silicon wa

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36

Lv, Y. S., Nan Li, Jun Wang, Tian Zhang, Min Duan, and Xue Ling Xing. "Analysis on the Contact Pressure Distribution of Chemical Mechanical Polishing by the Bionic Polishing Pad with Phyllotactic Pattern." Advanced Materials Research 215 (March 2011): 217–22. http://dx.doi.org/10.4028/www.scientific.net/amr.215.217.

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In order to make the contact pressure distribution of polishing wafer surface more uniform during chemical mechanical polishing (CMP), a kind of the bionic polishing pad with sunflower seed pattern has been designed based on phyllotaxis theory, and the contact model and boundary condition of CMP have been established. Using finite element analysis, the contact pressure distributions between the polishing pad and wafer have been obtained when polishing silicon wafer and the effects of the phyllotactic parameter of polishing pad on the contact pressure distribution are found. The results show th

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37

Zhang, Wen Biao, Shu Min Wan, Bin Lin, and Xiao Feng Zhang. "Study on the Removal Function of Annular Polishing Pad Based on the Computer Controlled Polishing Technology." Applied Mechanics and Materials 457-458 (October 2013): 552–55. http://dx.doi.org/10.4028/www.scientific.net/amm.457-458.552.

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On the basis of the Preston assumption, the removal function of the annular polishing pad with the structure of the dual-rotor movement has been studied. The level of the similarity of the characteristic curve of the annular polishing pad and the Gaussian distribution has been evaluated by the tending factor. The pulse iteration method and the matrix calculation have been used to compute the residual error and the dwell time. The simulation result proved that the residual error (RMS) polished by the annular polishing pad had dropped 8.7% than that polished by the normal polishing pad with the

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38

Gao, Hong, and Jian Xiu Su. "Study on the Surface Characteristics of Polishing Pad Used in Chemical Mechanical Polishing." Advanced Materials Research 102-104 (March 2010): 724–28. http://dx.doi.org/10.4028/www.scientific.net/amr.102-104.724.

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Studying the surface characteristics of polishing pad helps to understand and analyze the chemical mechanical polishing (CMP) mechanism and optimize the microscopic structure of polishing pad. The surface roughness, organizational structure, porosity, depth and diameter of micro-pore, distribution of asperity and profile bearing rate of IC1000/Suba IV polishing pad were studied with the profilometer ZYGO 5022, AFM and SEM. The results of measurement and calculation show that the surface roughness is 6.8μm , the root mean square ( RMS ) roughness is 9.4μm, the surface porosity is 56 % , the mic

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39

Tsai, Hung Jung, Pay Yau Huang, Ming Yi Tsai, Hung Cheng Tsai, and Cin Jhe Lin. "Investigation of Shear and Thermal Characteristics of Polishing Interface in Soft Pad Polishing Process." Applied Mechanics and Materials 55-57 (May 2011): 508–11. http://dx.doi.org/10.4028/www.scientific.net/amm.55-57.508.

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In the current study, a high precision polishing process test bench with in-situ measurement technology was developed. The test bench also adopted to investigate the effects of operating parameters on polishing interfacial phenomena during the polishing process with IC1000 pad. The experimental results coincide with the experimental and theoretical data published previously results. The developed test rig and the current experimental outcomes contribute to the understanding of soft pad polishing mechanism.

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Tsai, Hung Jung, Pay Yau Huang, Chung Ming Tan, and Tang Feng Chang. "The Experimental Study on Mechanical Polishing on Materials with Hydrolysis Reaction." Key Engineering Materials 739 (June 2017): 182–86. http://dx.doi.org/10.4028/www.scientific.net/kem.739.182.

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The hydrolytic properties of LiAlO2 (LAO) are important factors for its applications on LED fabrication. During soft pad polishing process, the H2O in the slurry is deleterious for LAO surface polishing results. The current study develops a material removal rate model for materials with hydrolysis reaction to predict the result of polishing process.The current research conducts the experimental studies to investigate the material removal rate and its mechanism during the soft pad polishing process. In the experimental study, the hydrolytic properties of LAO have been tested to understand the h

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Yan, Jie Wen, Qiu Sheng Yan, Jia Bin Lu, Wei Qiang Gao, and Zhi Ying Huang. "Experimental Research on Smooth Surface Polishing Based on the Cluster Magnetorheological Effect." Key Engineering Materials 516 (June 2012): 79–83. http://dx.doi.org/10.4028/www.scientific.net/kem.516.79.

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A new planarization polishing method, based on the cluster magnetorheological (MR) effect and using MR fluid to form the flexible polishing pad, is presented in this paper to polish optical glass. To explore the machining characteristic of the viscid and flexible polishing pad based on the cluster MR-effect, some process experiments were conducted to reveal the influence of the machining gap, the speed of the polishing disc and the polishing time on the machining effect. The results indicate that the viscid and flexible polishing pad based on the cluster MR-effect under a strong magnetic field

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Sun, Yu Li, Dun Wen Zuo, Jun Li, Wen Zhuang Lu, and Z. Z. Yu. "Computer Simulation on the Motion Tracks of Ice Fixed Abrasives Polishing." Key Engineering Materials 426-427 (January 2010): 376–80. http://dx.doi.org/10.4028/www.scientific.net/kem.426-427.376.

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Ice fixed abrasives (IFA) polishing is a novel ultra-precision machining method. The motion tracks of abrasives during IFA polishing have an important effect on the quality of the machined silicon wafer. Firstly, the motion tracks of IFA polishing are theoretically analyzed in this paper. It is founded that the paths of any point in the IFA polishing pad relative to the wokpiece are a group of cycloids. Then, the motion tracks of single abrasive and multiple abrasives in the IFA polishing pad are simulated respectively. The results show that increasing the eccentricity is beneficial to the enl

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Tso, Pei Lum, and Cheng Yi Shih. "Polishing Characteristics on Silicon Wafer Using Fixed Nano-Sized Abrasive Pad." Key Engineering Materials 389-390 (September 2008): 487–92. http://dx.doi.org/10.4028/www.scientific.net/kem.389-390.487.

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A mechanical polishing process was used to reduce surface roughness through mechanical fracturing and removal of the substrate’s roughened regions. It was thus necessary to understand the effect of grain size and morphology on the material removal mechanisms of silicon wafers by stepwise polishing using a fixed abrasive pad. A hybrid process combining the optimized silicon polishing recipe for rapid roughness reduction with a micro-sized diamond, and then polishing using a nano-sized diamond to produce a final finished surface, may be the optimum approach. The best result using the hybrid poli

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Shih, Cheng Yi, Pei Lum Tso, and James C. Sung. "Analysis of Fixed Abrasive Pads with a Nano-Sized Diamond for Silicon Wafer Polishing." Advanced Materials Research 76-78 (June 2009): 410–15. http://dx.doi.org/10.4028/www.scientific.net/amr.76-78.410.

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Current polishing pads cannot polish a workpiece without using slurry with free abrasive. The new slurry is required to be continually poured into the working area, so more than half of the slurry may be lost from the table without contacting the wafer surface; this leads to economic and environmental problems. In the current work, the fixed abrasive pad was used, where nano-sized diamond abrasives were embedded in the polishing pad; distilled water, rather than slurry, was used. The effect of various fixed abrasive pad designs on polishing characteristics during silicon wafer polishing was in

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Satake, Urara, Toshiyuki Enomoto, Teppei Miyagawa, Takuya Ohsumi, Hidenori Nakagawa, and Katsuhiro Funabashi. "Stabilization of Removal Rate in Small Tool Polishing of Glass Lenses." International Journal of Automation Technology 13, no. 2 (2019): 221–29. http://dx.doi.org/10.20965/ijat.2019.p0221.

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The demand for improving the image quality of cameras has increased significantly, especially in industrial fields such as broadcasting, on-vehicle, security, factory automation, and medicine. The surface of glass lenses as a key component of cameras is formed and finished by polishing using small tools. The existing polishing technologies, however, exhibit serious problems including an unstable material removal rate over time. In our previous work, the mechanism of time variation in material removal rate was clarified. Based on the findings, a vibration-assisted polishing method using polishi

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Son, Jungyu, and Hyunseop Lee. "Contact-Area-Changeable CMP Conditioning for Enhancing Pad Lifetime." Applied Sciences 11, no. 8 (2021): 3521. http://dx.doi.org/10.3390/app11083521.

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Chemical–mechanical polishing (CMP) is a process that planarizes semiconductor surfaces and is essential for the manufacture of highly integrated devices. In CMP, pad conditioning using a disk with diamond grit is adopted to maintain the surface roughness of the polishing pad and remove polishing debris. However, uneven pad wear by conditioning is unavoidable in CMP. In this study, we propose a contact-area-changeable conditioning system and utilize it to conduct a preliminary study for improving pad lifetime. Using the conventional conditioning method (Case I), the material removal rate (MRR)

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Chen, Chao-Chang A., Jen-Chieh Li, Wei-Cheng Liao, Yong-Jie Ciou, and Chun-Chen Chen. "Dynamic Pad Surface Metrology Monitoring by Swing-Arm Chromatic Confocal System." Applied Sciences 11, no. 1 (2020): 179. http://dx.doi.org/10.3390/app11010179.

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This study aims to develop a dynamic pad monitoring system (DPMS) for measuring the surface topography of polishing pad. Chemical mechanical planarization/polishing (CMP) is a vital process in semiconductor manufacturing. The process is applied to assure the substrate wafer or thin film on wafer that has reached the required planarization after deposition for lithographic processing of the desired structures of devices. Surface properties of polishing pad have a huge influence on the material removal rate (MRR) and quality of wafer surface by CMP process. A DPMS has been developed to analyze t

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Ng, Sum Huan, Robert Hight, Chunhong Zhou, Inho Yoon, and Steven Danyluk. "Pad Soaking Effect on Interfacial Fluid Pressure Measurements During CMP." Journal of Tribology 125, no. 3 (2003): 582–86. http://dx.doi.org/10.1115/1.1538632.

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Prior work has shown that there exist a sub-ambient fluid pressure at the interface between a rigid flat and the polishing pad during chemical mechanical polishing (CMP). This sub-ambient fluid pressure can have a significant impact on the polishing process since its magnitude may be similar to the applied load, depending on conditions. Further results have shown that there is a relationship between pad soaking time and the magnitude of this sub-ambient fluid pressure. This paper addresses measurements of the pad soaking time versus the magnitude of the sub-ambient interfacial fluid pressure.

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Li, Min, Qiu Sheng Yan, Jia Bin Lu, and Jing Fu Chai. "Study on Compound Machining of Polyurethane Polishing Pad and Cluster Abrasive Brush Based on MR Effect." Key Engineering Materials 487 (July 2011): 238–42. http://dx.doi.org/10.4028/www.scientific.net/kem.487.238.

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Method of compound machining is used to process single crystal silicon and SrTiO3 ceramic substrates, and the factors on effects of compound machining are studied such as magnetic field intensity, processing time, rotating speed of lapping plate and lapping pressure. The results show that the roughness of work pieces processed by compound machining are smaller than that by lapping based on cluster MR effect and polyurethane pad polishing process, while the material removal rate is higher than polyurethane pad polishing process, therefore, compound machining shows its synergistic effect between

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Zhang, Zhu Qing, and Kang Lin Xing. "Study on 6H-SiC Crystal Substrate (0001) C Surface in FA-CMP Based on Diamond Particle." Applied Mechanics and Materials 727-728 (January 2015): 244–47. http://dx.doi.org/10.4028/www.scientific.net/amm.727-728.244.

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Through experimental study on the role of the free abrasive in chemical mechanical polishing, in this paper, four different types of abrasive which were chosen were used for the research of material removal rate(MRR) and surface quality of SiC single crystal . Finally ,Diamond abrasive which is considered was the most suitable for chemical mechanical polishing(CMP) abrasive of SiC Crystal Substrate. With diamond Particle polish pad polishing, it is draw a comparison result on the influence of the free abrasive and consolidation abrasive for the material removal rate and surface quality of 6H-S

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