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Journal articles on the topic 'Polycrystalline films'

Author: Grafiati

Published: 28 May 2022

Last updated: 30 July 2025

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1

Tetyorkin, V. V. "Photoluminescence studies of CdTe polycrystalline films." Semiconductor Physics Quantum Electronics and Optoelectronics 15, no. 4 (2012): 340–44. http://dx.doi.org/10.15407/spqeo15.04.340.

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2

Chung, C. K., and T. S. Chen. "Effect of nitrogen flow ratio on the microstructure evolution and nanoindented mechanical property of the Ta–Si–N thin films." Journal of Materials Research 23, no. 2 (2008): 494–99. http://dx.doi.org/10.1557/jmr.2008.0065.

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The relations among the process, microstructure, and nanomechanical properties of cosputtered Ta–Si–N thin films have been investigated. The microstructure evolution and varied hardness and elastic modulus property of Ta–Si–N were influenced by nitrogen flow ratios [FN2% = FN2/(Far + FN2) × 100%] during cosputtering together with phase formation and the composition of films. The microstructure of Ta–Si–N formed at a low 2–10 FN2% was an amorphous-like phase with nanocrystalline grains embedded in an amorphous matrix, while polycrystalline Ta–Si–N was obtained at a high 20–30 FN2%. The cubic Ta

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3

Sukach, A. V. "Heterostructure ohmic contacts to p-CdTe polycrystalline films." Semiconductor Physics Quantum Electronics and Optoelectronics 17, no. 3 (2014): 268–71. http://dx.doi.org/10.15407/spqeo17.03.268.

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4

Tetyorkin, V. V. "Characterization of grain boundaries in CdTe polycrystalline films." Semiconductor Physics Quantum Electronics and Optoelectronics 18, no. 4 (2015): 428–32. http://dx.doi.org/10.15407/spqeo18.04.428.

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5

Wan, Linfeng, Caoyuan Mu, Yaofeng Liu, et al. "Structure and Wettability Engineering of Polycrystalline Diamond Films Treated by Thermally Oxidation, Second Growth and Surface Termination." Chinese Physics Letters 39, no. 3 (2022): 036801. http://dx.doi.org/10.1088/0256-307x/39/3/036801.

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High-quality polycrystalline diamond films with dominated (100)-oriented grains are realized by combining the thermally oxidation and the homogeneous second growth processes. Moreover, we investigate the wettability property of the polycrystalline diamonds in various stages. Different surface structures (with various grain sizes, voids, and orientations, etc.) and terminations (hydrogen or oxygen) have significant effects on the wettability of polycrystalline diamond films. The wettability is further closely related to the polarity of solutions. By measuring the contact angle and calculating t

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6

Srinivas, S., J. Mercado, R. R. Das, W. Perez, A. Martinez, and R. S. Katiyar. "Polycrystalline SrBi2Ta0.8Nb1.2O9 thin films." Integrated Ferroelectrics 29, no. 1-2 (2000): 99–110. http://dx.doi.org/10.1080/10584580008216678.

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7

Ze-Bo, Zhang, Li Yin-An, Xie Si-Shen, and Yang Guo-Zhen. "Polycrystalline ?-C3N4 thin films." Journal of Materials Science Letters 14, no. 24 (1995): 1742–44. http://dx.doi.org/10.1007/bf00270994.

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8

Wang, Wei Yan, Jin Hua Huang, Xian Peng Zhang, Wei Jie Song, and Rui Qin Tan. "Effect of Rapid Thermal Annealing Condition on the Structure and Conductivity Properties of Polycrystalline Silicon Films on Glass." Materials Science Forum 687 (June 2011): 634–40. http://dx.doi.org/10.4028/www.scientific.net/msf.687.634.

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The effect of rapid thermal annealing (RTA) temperature (700~1200 °C) and time (1~8 min) on the structure and conductivity properties of polycrystalline silicon (Si) films on glass, grown by RTA crystallization of magnetron sputtering (MS) deposited amorphous Si (a-Si) films, was investigated by means of X-ray diffraction (XRD) and UV reflectance. It was observed the critical temperature for crystallizing a-Si films was ~750 °C and ~700 °C based on XRD and reflectance measurements, respectively. As soon as RTA temperature reached and exceeded the critical value, the structural property of poly

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9

Yan, Y., K. M. Jones, and M. M. Al-Jassim. "Transmission Electron Microscopy Study of Planar Defects in Polycrystalline CdTe Thin Films." Microscopy and Microanalysis 7, S2 (2001): 556–57. http://dx.doi.org/10.1017/s1431927600028853.

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CdTe is a promising photovoltaic material due to its near optimum band gap and high absorption coefficient. Polycrystalline, thin-film CdTe/CdS solar cells have demonstrated an efficiency of 15.8%. High density of extended defects is often found in polycrystalline CdTe films grown by close-spaced sublimation (CSS). So far, most investigations of defects in CdTe have focused on epitaxially grown films, and the reported extended defects are mainly lamellar twins. However, epitaxially grown films generally have a different microstructure compared to CSS grown polycrystalline CdTe thin films. in t

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10

Wan, Xiao Hang, Zhao Wei Dong, Shu Jun Li, and Sheng Yong Liu. "Research on Thermal Stress of Slab Heating Process Based on Transient Non-Linear Analysis." Advanced Materials Research 311-313 (August 2011): 936–39. http://dx.doi.org/10.4028/www.scientific.net/amr.311-313.936.

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Polycrystalline α-HgI2 films have been grown through combining vertical deposition method with hot wall vapor phase deposition (HWPVD) method. The influence of the α-HgI2 seed layers on the structural and electrical properties of the polycrystalline α-HgI2 films was investigated. It is found that the α-HgI2 seed layers play an important role in reducing the grain sizes, increasing the density improving the crystallographic orientation and electrical properties of the polycrystalline α-HgI2 films.

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11

Weaver, M. L., L. P. M. Brandao, H. Garmestani, E. S. Gillman, K. H. Dahmen, and A. Morrone. "Microcharacterization of liquid delivery metalorganic chemical vapor deposition processed thin film materials exhibiting giant magnetoresistance." Journal of Materials Research 14, no. 5 (1999): 2007–11. http://dx.doi.org/10.1557/jmr.1999.0271.

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Thin films of La0.6Ca0.4MnO3 (LCMO) have been produced on (001) oriented LaAlO3 (LAO) and yttrium-stabilized zirconia (YSZ) substrates by liquid-delivery metalorganic chemical vapor deposition (LD-MOCVD). X-ray diffraction (XRD) analyses showed that the films were epitaxially grown on LAO substrates and were monocrystalline at a thickness of less than 500 Å. At a thickness of greater than 500 Å, the films became polycrystalline but maintained their high texture (preferred crystalline orientation). Films grown on YSZ were always polycrystalline but were also highly oriented. Regardless of the s

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12

Nagahama, T., T. Manabe, I. Yamaguchi, T. Kumagai, S. Mizuta, and T. Tsuchiya. "Preparation of epitaxial SrBi2Nb2O9 and SrBi2Ta2O9 thin films by the coating-pyrolysis process." Journal of Materials Research 14, no. 7 (1999): 3090–95. http://dx.doi.org/10.1557/jmr.1999.0414.

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Epitaxial and polycrystalline thin films of bismuth layer-structured ferroelectrics, SrBi2Nb2O9 (SBN) and SrBi2Ta2O9 (SBT), were prepared on single-crystal SrTiO3(001) and polycrystalline yttria-stabilized zirconia substrates, respectively, by the coating-pyrolysis process. The epitaxial relationship of the films and substrates was SBN, SBT (001)//SrTiO3(001) and SBN, SBT [100]//SrTiO3[100],[010], where pseudotetragonal indices were adopted for SBN and SBT. The lattices of the epitaxial films were found to be slightly strained owing to stress from the substrate. Atomic force microscopy observa

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13

Wang, Y. L., M. C. Li, X. K. Chen, et al. "Nano-Polycrystalline Vanadium Oxide Thin Films Prepared by Pulsed Laser Deposition." Journal of Nanoscience and Nanotechnology 8, no. 5 (2008): 2604–8. http://dx.doi.org/10.1166/jnn.2008.18290.

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Nano-polycrystalline vanadium oxide thin films have been successfully produced by pulsed laser deposition on Si(100) substrates using a pure vanadium target in an oxygen atmosphere. The vanadium oxide thin film is amorphous when deposited at relatively low substrate temperature (500 °C) and enhancing substrate temperature (600–800 °C) appears to be efficient in crystallizing VOx thin films. Nano-polycrystalline V3O7 thin film has been achieved when deposited at oxygen pressure of 8 Pa and substrate temperature of 600 °C. Nano-polycrystalline VO2 thin films with a preferred (011) orientation ha

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14

Gavalas, Michail, Yann Gallou, Didier Chaussende, Elisabeth Blanquet, Frédéric Mercier, and Konstantinos Zekentes. "Progress in Polycrystalline SiC Growth by Low Pressure Chemical Vapor Deposition and Material Characterization." Micromachines 16, no. 3 (2025): 276. https://doi.org/10.3390/mi16030276.

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The purpose of this paper is to give a review on the state of the art of polycrystalline SiC material grown by low-pressure chemical vapor deposition (LPCVD). Nowadays, LPCVD is the main technique used for the deposition of polycrystalline SiC, both in academic research and industry. Indeed, the LPCVD technique is today the most mature technique to grow high purity polycrystalline thin films with controlled thickness and structure over a large area (>50 cm) and/or 3D substrate. Its ability to have a high degree of modification on the growth conditions and the chosen precursor system allows

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15

Liao, Yang, Wei Min Shi, Wei Guang Yang, Ji Rong Li, Jun Qian, and Shu Yi Lu. "Properties of Ohmic Contact of Au Electrode on Polycrystalline Mercuric Iodide." Advanced Materials Research 690-693 (May 2013): 1672–75. http://dx.doi.org/10.4028/www.scientific.net/amr.690-693.1672.

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Polycrystalline mercuric iodide films are being developed as a new detector technology for digital X-ray imaging. The properties of the contact between electrode and film play an important role in the performance of the polycrystalline mercuric iodide detector. In this paper, the films were grown on the thin film transistor (TFT) substrates via hot-wall physical vapor deposition method. Au front contacts were deposited onto the HgI2 films by thermal evaporation under a vacuum of 10-4Pa. The HgI2 films were characterized by X-ray diffraction (XRD). The surface morphology of the films before and

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16

Chiu, Chien C., Seshu B. Desu, Gang Chen, Ching Yi Tsai та William T. Reynolds. "Deposition of epitaxial β–SiC films on porous Si(100) from MTS in a hot wall LPCVD reactor". Journal of Materials Research 10, № 5 (1995): 1099–107. http://dx.doi.org/10.1557/jmr.1995.1099.

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Epitaxial β-SiC thin films were grown on modified Si(100) substrates from methyltrichlorosilane (CH3SiCl3 or MTS) in a hot wall reactor by using low pressure chemical vapor deposition (LPCVD). At 1150 °C, the growth rate of the β-SiC films was 120 Å/min. Epitaxial β-SiC(100) thin films were deposited after the deposition time of 12.5 min. However, the crystallinity of the deposited films was influenced by the deposition time. For example, the occurrence of rotational β-SiC(100) crystals and polycrystalline β-SiC with a highly preferred orientation of (100) planes was obtained for the depositio

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17

Fan, Hai Dong, Qing Yuan Wang, and Muhammad Kashif Khan. "Cyclic Bending Response of Single- and Polycrystalline Thin Films: Two Dimensional Discrete Dislocation Dynamics." Applied Mechanics and Materials 275-277 (January 2013): 132–37. http://dx.doi.org/10.4028/www.scientific.net/amm.275-277.132.

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The bending behavior of single- and polycrystalline thin films is modeled by two-dimensional discrete dislocation dynamics (DDD) to study the cyclic bending response. In the polycrystalline films, grain boundaries (GBs) are simulated with a penetrable dislocation-GB interaction model. Our results reveal that the single- and polycrystalline thin films under pure bending exhibit strong Bauschinger effect but no cyclic hardening or softening. Furthermore, the uploading response of each cycle can be divided into three stages, which are associated with the glide, annihilation and nucleation of disl

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18

Čížek, Jakub, Oksana Melikhova, Marián Vlček, et al. "Hydrogen Interaction with Defects in Nanocrystalline, Polycrystalline and Epitaxial Pd Films." Journal of Nano Research 26 (December 2013): 123–33. http://dx.doi.org/10.4028/www.scientific.net/jnanor.26.123.

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Hydrogen interaction with defects and structural development of Pd films with various microstructures were investigated. Nanocrystalline, polycrystalline and epitaxial Pd films were prepared and electrochemically loaded with hydrogen. Structural changes of Pd films caused by absorbed hydrogen were studied by in-situ X-ray diffraction combined with acoustic emission and measurement of electromotorical force. Development of defects during hydrogen loading was investigated by positron annihilation spectroscopy. It was found that hydrogen firstly fills open volume defects existing already in the f

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19

Wang, Nan, Yu-Xiang Dai, Tian-Lin Wang, Hua-Zhe Yang, and Yang Qi. "Investigation of growth characteristics and semimetal–semiconductor transition of polycrystalline bismuth thin films." IUCrJ 7, no. 1 (2020): 49–57. http://dx.doi.org/10.1107/s2052252519015458.

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The preferred orientation growth characteristics and surface roughness of polycrystalline bismuth (Bi) thin films fabricated on glass substrates using the molecular beam epitaxy method were investigated at temperatures ranging from 18 to 150°C. The crystallization and morphology were analyzed in detail and the polycrystalline metal film structure-zone model (SZM) was modified to fit the polycrystalline Bi thin film. The boundary temperature between Zone T and Zone II in the SZM shifted to higher temperatures with the increase in film thickness or the decrease of growth rate. Furthermore, the e

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20

Williamson, M., R. Hull, D. Dunn, J. Greene, and S. Kodambaka. "Microtextural Characterization and Orientational Mapping of Polycrystalline Thin Films Using TEM Dark Field Imaging Through an Annular Objective Aperture." Microscopy and Microanalysis 5, S2 (1999): 218–19. http://dx.doi.org/10.1017/s1431927600014410.

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Several methods have been applied to the texture characterization of polycrystalline films, including X-ray diffraction and several SEM and TEM techniques. Few of these techniques combine high spatial resolution with the ability to characterize large sample areas in a short time. We have fabricated annular objective apertures for the TEM, extending earlier work of Heinemann and Poppa, to characterize the orientation and size of grains within polycrystalline thin films. This procedure is similar to conical dark field imaging which has been shown to provide microtextural information over large a

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21

Wei, Lanhua, Mark Vaudin, Cheol Song Hwang, Grady White, Jason Xu, and Andrew J. Steckl. "Heat conduction in silicon thin films: Effect of microstructure." Journal of Materials Research 10, no. 8 (1995): 1889–96. http://dx.doi.org/10.1557/jmr.1995.1889.

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A study was made of the thermal properties of low pressure chemical vapor deposition (LPCVD) silicon thin films with amorphous and polycrystalline microstructures, produced by varying the substrate temperature. Thermal diffusivity measurements were conducted using a thermal wave technique. The thermal diffusivity of the polycrystalline films was found to be about three times that of the amorphous films, but about one eighth that of bulk silicon single crystals. There was also an indication that the diffusivity increased with deposition temperature above the transition temperature from the amor

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22

Rodríguez, A., T. Rodríguez, J. Sangrador, E. San Andrés, and I. Mártil. "Capas de SiGe policristalino hidrogenado y su aplicación en transistores de película delgada." Boletín de la Sociedad Española de Cerámica y Vidrio 43, no. 2 (2004): 386–89. http://dx.doi.org/10.3989/cyv.2004.v43.i2.548.

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23

Tomaev, V. V., and A. I. Glazov. "Morphology of polycrystalline cassiterite films." Crystallography Reports 59, no. 5 (2014): 749–52. http://dx.doi.org/10.1134/s1063774514050204.

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24

Okuda, T., T. Katayama, K. Satoh, and H. Yamamoto. "Preparation of polycrystalline Bi3Fe5O12garnet films." Journal of Applied Physics 69, no. 8 (1991): 4580–82. http://dx.doi.org/10.1063/1.348316.

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25

Dannefaer, S., W. Zhu, T. Bretagnon, and D. Kerr. "Vacancies in polycrystalline diamond films." Physical Review B 53, no. 4 (1996): 1979–84. http://dx.doi.org/10.1103/physrevb.53.1979.

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26

George, J., T. I. Palson, and K. S. Joseph. "High mobility polycrystalline SnTe:Ge films." Solid State Communications 64, no. 1 (1987): 161–64. http://dx.doi.org/10.1016/0038-1098(87)90543-6.

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27

Reiss, G. "STM on polycrystalline thin films." Vacuum 41, no. 4-6 (1990): 1322–24. http://dx.doi.org/10.1016/0042-207x(90)93946-g.

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28

Piaggi, A., G. Lanzani, G. Bongiovanni, et al. "Optical properties of polycrystalline films." Optical Materials 9, no. 1-4 (1998): 489–93. http://dx.doi.org/10.1016/s0925-3467(97)00097-9.

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29

Liu, Gong Long, Lei Ma, Yang Liao, Wei Min Shi, Wei Guang Yang та Yue Lu Zhang. "Growth Time Influence on Polycrystalline α-HgI₂ Films". Applied Mechanics and Materials 271-272 (грудень 2012): 263–67. http://dx.doi.org/10.4028/www.scientific.net/amm.271-272.263.

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Polycrystalline α-HgI2 films have been grown on TFT substrates using hot-wall vapor phase deposition (HWPVD) with the different growth times. The influence of different growth times (1 hour, 2 hours, 3 hours, 4 hours) on the structural and electrical properties of the polycrystalline α-HgI2 films is investigated. Metallurgical microscope, scan electron microscopes (SEM) and X-ray diffraction (XRD) characterization and the electric transport properties were investigated by the I-V characteristics. The polycrystalline α-HgI2 films growth by 3 hours show more better performance than others. So we

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30

Hossion, M. Abul, and B. M. Arora. "Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique." Crystals 10, no. 4 (2020): 237. http://dx.doi.org/10.3390/cryst10040237.

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Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a

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31

Chakraborty, Jay. "Phase Transformation in Ultra-Thin Films." Advanced Materials Research 996 (August 2014): 860–65. http://dx.doi.org/10.4028/www.scientific.net/amr.996.860.

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Thickness dependent structural phase transformation in thin polycrystalline metal films has been reviewed. Various effects of film thickness reduction on film microstructure have been identified. Film thickness dependent structural phase transformation has been treated thermodynamically taking polycrystalline titanium (Ti) thin film as model example.

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32

Rusakova, I., A. Hamed, and P. H. Hor. "TEM study of C70 polycrystalline films." Journal of Materials Research 9, no. 11 (1994): 2814–22. http://dx.doi.org/10.1557/jmr.1994.2814.

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Using conventional and high resolution TEM, we have studied the microstructure of C70 polycrystalline films, prepared by sublimation of C70 powder onto glass, carbon holey film, and sapphire substrates held at 200 °C. An fcc structure with lattice parameter 1.50 nm is observed for the films on glass and amorphous carbon. A different structure and stronger adherence to the substrate was observed for the thin film grown on sapphire, suggesting a stronger molecule-substrate interaction in this case. Thicker films on sapphire, however, did have fcc structure. In all cases, the film grows in large

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33

Burke, M. G., R. E. Witkowski, and R. T. Blackham. "Microstructure of polycrystalline diamond film." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (1990): 708–9. http://dx.doi.org/10.1017/s0424820100176678.

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Diamond films have attracted considerable attention for use in a wide variety of industrial and commercial applications, particularly as coatings. Diamond coatings will enhance the performance of electro-optical systems, space-based photovoltaic power sources, packages for power electronic devices, and wear-limited processing equipment. These films are generally grown via plasma deposition or chemical vapor deposition techniques using a mixture. To characterize the as-grown diamond films, a variety of techniques including transmission electron microscopy are utilized. For this study, films wer

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34

Shaw, David T. "Controlled Growth of High-Temperature Superconducting Thin Films on Polycrystalline Substrates." MRS Bulletin 17, no. 8 (1992): 39–44. http://dx.doi.org/10.1557/s0883769400041841.

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Since their discovery in 1987, significant progress has been made in the fabrication of high-quality, high-temperature superconducting (HTS) thin films. Films with reproducible properties can be routinely deposited on single crystal substrates by several well-established processing techniques. Single crystal substrates, however, are not suitable for many applications because of their cost, limitations in size and shape, and lack of flexibility. Hence, a great deal of effort has been directed at the fabrication of thin films on polycrystalline rather than single crystal substrates. For example,

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35

CHOI, W. K., K. L. PEY, H. B. ZHAO, T. OSIPOWICZ, and Z. X. SHEN. "NICKEL SILICIDATION ON POLYCRYSTALLINE SILICON GERMANIUM FILMS." International Journal of Modern Physics B 16, no. 28n29 (2002): 4323–26. http://dx.doi.org/10.1142/s0217979202015352.

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The interfacial reactions of Ni with polycrystalline Si 0.8 Ge 0.2 films at a temperature range of 300-900°C by rapid thermal annealing for 60s are studied. The sheet resistances of the silicide films were relatively low at ~10 ohm/sq for samples annealed below 600°C. X-Ray diffraction results suggested the existence of low resistivity phase Ni(Si 1-x Ge x ) in the film. The significant increase in sheet resistance for films annealed at 700-900°C is probably due to the reduction in the density of Ni(Si 1-x Ge x ) as a result of fast Ni diffusion at high annealing temperatures. Fast grain bound

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36

Spinella, C., F. Benyaïch, A. Cacciato, E. Rimini, G. Fallico, and P. Ward. "Role of grain boundaries in the epitaxial realignment of undoped and As-doped polycrystalline silicon films." Journal of Materials Research 8, no. 10 (1993): 2608–12. http://dx.doi.org/10.1557/jmr.1993.2608.

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The early stages of the thermally induced epitaxial realignment of undoped and As-doped polycrystalline Si films deposited onto crystalline Si substrates were monitored by transmission electron microscopy. Under the effect of the heat treatment, the native oxide film at the poly-Si/c-Si interface begins to agglomerate into spherical beads. The grain boundary terminations at the interface are the preferred sites for the triggering of the realignment transformation which starts by the formation of epitaxial protuberances at these sites. This feature, in conjunction with the microstructure of the

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37

Ivaskevych, Igor, Oleh Vanchulyak, and Oleksandr Olar. "Forensic differential diagnosis of ethanol and carbon monoxide poisoning by diffused tomography of polarization images of polycrystalline blood films." Forensic-medical examination, no. 1 (October 18, 2021): 55–63. http://dx.doi.org/10.24061/2707-8728.1.2021.7.

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This work is devoted to the study of the possibilities of applying the method of differential polarimetric microscopy with algorithmic reproduction of fluctuations of linear and circular birefringence of polycrystalline component of human blood films in forensic practice for differential diagnosis of alcohol and carbon monoxide poisoning. Aim of the work. Development of a set of forensic objective criteria for the possibility of differential diagnosis of ethanol and CO poisoning by diffuse tomography of polarization images of polycrystalline films of human blood. Materials and meth

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38

KIM, KYOU-HYUN, JONG-HYUN SEO, SANG-WON YOON, KON-BAE LEE, JIN-HA WHANG, and JAE-PYOUNG AHN. "IN-SITU TEM INVESTIGATION ON NUCLEATION AND GROWTH BEHAVIOR OF P-DOPED Si THIN FILMS." Modern Physics Letters B 23, no. 31n32 (2009): 3747–51. http://dx.doi.org/10.1142/s0217984909021788.

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The nucleation and growth behaviors of undoped and phosphorus doped polycrystalline Si thin films were investigated by in-situ TEM observations. Polycrystalline Si thin films were partially changed to amorphous by ion implantations. A normal grain growth was observed in the undoped Si thin films during heating. On the other hand, the P -doped sample showed the recovery and growth at grain boundary as well as the nucleation of Si nanocrystals at amorphous regions. Although the amorphous hindered the grain growth and acted as the nucleation source of Si nanocrystals at lower temperature, the fin

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39

Islam, Md Toriqul, and Mool C. Gupta. "Synthesis, structural, optical, and electrical properties of continuous wave and pulse laser sintered semiconductor Ge films." Semiconductor Science and Technology 37, no. 3 (2022): 035015. http://dx.doi.org/10.1088/1361-6641/ac4d16.

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Abstract The crystallization process of Ge films by a continuous wave (CW) and a pulsed laser is very effective for producing smooth, homogeneous, and crack-free polycrystalline films to use in transistors, photodetectors, and photovoltaic applications. However, little progress has been made to directly crystallize Ge films based on micro/nanoparticles (NPs) using the laser sintering (LS) process. In this paper, a simultaneous LS and crystallization process of Ge micro/NPs to develop thick polycrystalline films on silicon substrates is demonstrated. Silicon substrates with a SiO2 insulating la

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40

DeNatale, J. F., and P. H. Kobrin. "Lattice distortion effects on electrical switching in epitaxial thin film NdNiO3." Journal of Materials Research 10, no. 12 (1995): 2992–95. http://dx.doi.org/10.1557/jmr.1995.2992.

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Crystalline thin films of NdNiO3 have been epitaxially grown on the (100) face of single-crystal LaAlO3 substrates. These films exhibit the characteristic reversible change in electrical conductivity with temperature previously observed in bulk polycrystalline material. The temperature of the electrical transition in the epitaxial thin films was lower than reported for the bulk polycrystalline ceramics. This effect is attributed to lattice strains associated with the film processing and interfacial lattice matching constraints.

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41

Tsujino, J., N. Tatsumi, and Y. Shiohara. "Superconducting YBa2Cu3Ox films prepared on YSZ polycrystalline substrates by rf thermal plasma evaporation." Journal of Materials Research 9, no. 5 (1994): 1089–97. http://dx.doi.org/10.1557/jmr.1994.1089.

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As-grown YBa2Cu3Ox films prepared on single crystal (100)MgO substrates by rf thermal plasma evaporation have the advantages of a high deposition rate of 730 nm/min, a large area deposition over 300 cm2, and a high Jc of 6.8 × 105 A/cm2 (77 K, O T), as reported in previous papers.1,2 We report in this paper about the preparation of YBa2Cu3Ox films on yttria-stabilized zirconia (YSZ) polycrystalline substrates for a practical application using this technique to synthesize these films on flexible (metal or flexible polycrystal) substrates. Films prepared on YSZ polycrystalline substrates grew wi

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YAN, S. L., C. G. LIANG, R. X. HAN, et al. "GROWTH AND PROPERTIES OF YBCO SUPERCONDUCTING THIN FILMS PREPARED BY DC MAGNETRON SPUTTERING FROM A PAIR OF SUPERCONDUCTING STOICHIOMETRIC YBCO TARGETS." Modern Physics Letters B 03, no. 01 (1989): 31–35. http://dx.doi.org/10.1142/s0217984989000066.

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Superconducting YBCO thin films have been fabricated by dc magnetron sputtering from a pair of stoichiometric YBCO superconducting targets on polycrystalline ZrO 2 substrates. The post-annealing superconducting films exhibit the properties with the critical onset temperature of 95 K and zero resistivity temperature at 83 K. The relation between the composition of the film and the radial position of the substrate is investigated. The XRD analysis proved that the films are mainly orthorhombic polycrystalline structure.

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Yen, H., E. P. Kvam, R. Bashir, S. Venkatesan, and G. W. Neudeck. "Interface morphology of thermal oxide grown on polycrystalline silicon by different processes." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (1992): 1396–97. http://dx.doi.org/10.1017/s0424820100131619.

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Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the po

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Jones, K. M., F. S. Hasoon, A. B. Swartzlander, M. M. Al-Jassim, T. L. Chu, and S. S. Chu. "The morphology and microstructure of polycrystalline CdTe thin films for solar cell applications." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (1992): 1384–85. http://dx.doi.org/10.1017/s0424820100131553.

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Polycrystalline thin films of II-VI semiconductors on foreign polycrystalline (or amorphous) substrates have many applications in optoelectronic devices. In contrast to the extensive studies of the heteroepitaxial growth of compound semiconductors on single-crystal substrates, the nucleation and growth of thin films of II-VI compounds on foreign substrates have received little attention, and the properties of these films are often controlled empirically to optimize device performance. A better understanding of the nucleation, growth, and microstructure will facilitate a better control of the s

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Vasyuk, V. L., V. V. Protsiuk, Y. M. Vasilchishin, and S. V. Vasiuk. "POLARIZATION TOMOGRAPHY METHODS TO DIFFERENTIATE ASEPTIC AND SEPTIC LOOSENING AFTER TOTAL HIP REPLACEMENT." Problems of traumatology and osteosynthesis, no. 1(19) (December 10, 2020): 33–46. http://dx.doi.org/10.51309/2411-6858-2020-19-1-33-46.

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Abstract. This article contains: • Structural-logical scheme and analytical description of the differential diagnosis for aseptic and septic loosening after total hip replacement using the methods of differential Mueller-matrix mapping of circular birefringence (CB) distributions of polycrystalline synovial fluid (SF) films. • Statistical analysis of the distributions of CB in polycrystalline SF films obtained from patients in the control group and groups with different hip joint pathology. • Results of establishing the strength of the differential Mueller-matrix mapping method of the distribu

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Tian, Yingyi, Shuanhu Wang, Xiangyang Wei, Ruishu Yang, and Kexin Jin. "Anomalous Hall effect superimposed in polycrystalline SrRuO₃ thick film." Applied Physics Letters 120, no. 14 (2022): 142404. http://dx.doi.org/10.1063/5.0085391.

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The electric, magnetic, and thermal properties of transition metal oxide films can be modulated by introducing polycrystalline at the macroscopic grain boundaries. Based on these points, in this work, we studied the two-channel anomalous Hall effect (AHE) in polycrystalline ferromagnetic SrRuO3 (SRO) films. The magnetic regions with different crystal directions have different coercivities, resulting in two opposite AHE channels in the polycrystalline SRO layer. However, single-crystal SRO films prepared under the same conditions are found to exhibit only one AHE. The superposition of the two A

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Kim, Sunjae, Minje Kim, Jihyun Kim та Wan Sik Hwang. "Plasma Nitridation Effect on β-Ga2O3 Semiconductors". Nanomaterials 13, № 7 (2023): 1199. http://dx.doi.org/10.3390/nano13071199.

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The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. Oxygen vacancies are one of the most common defects and are known to serve as electron trap sites whose energy levels are below the conduction band (CB) edge for metal oxide semiconductors, including β-Ga2O3. In this study, the effects of plasma nitridation (PN) on polycrystalline β-Ga2O3 thin films are discussed. In detail, the electrical and optical properties of polycrystalline β-Ga2O3 thin films are compared at different PN tre

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M, Abul Hossion, and M. Arora Brij. "Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique." Crystals 10, no. 4 (2020): 237–44. https://doi.org/10.3390/cryst10040237.

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Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO<sub>2</sub>, glass/ITO/TiO<sub>2</sub>, Al<sub>2</sub>O<sub>3</sub>, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10<sup>−2</sup> &Ome

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Kong, Ling Jian, Gui Fang Zhu, Jian Qiang Zhong, Kui Xia Han, and Xiao Kang Wang. "Time Effect of Sulfurization on the Characterization of Copper Indium Diselenide." Advanced Materials Research 816-817 (September 2013): 38–41. http://dx.doi.org/10.4028/www.scientific.net/amr.816-817.38.

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Polycrystalline CuIn(Se,S)2 (CISS) thin films with chalcopyrite structure were synthesized by sol-gel spin-coating method. Sequential reduction, selenization and sulfurization treatments were performed with hydrogen, Se and H2S vapor, respectively. The effects of different sulfurization times on the films were also studyed. X-ray diffraction (XRD), and SEM analysis have been employed to examine the structural properties and surface morphology of polycrystalline CISS thin films. The experimental results demonstrated that the obtained CISS had good crystallinity and uniformity.

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Ushenko, Yuriy, Iryna Soltys, Oleksandr Dubolazov, et al. "Diagnostic capabilities of Jones matrix theziogaphy of the multifractal structure of dehydrated blood films." Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska 15, no. 2 (2025): 57–60. https://doi.org/10.35784/iapgos.7268.

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The paper proposes the use of multifractal analysis by algorithmic implementation of coordinate reconstructed distributions of linear birefringence magnitude and obtaining a spectrum of fractal dimensions of dehydrated polycrystalline blood films. The results of the diagnostic application of laser Jones matrix theziography methods of multifractal structure of polycrystalline networks of dehydrated films of blood for differential diagnostics of inflammatory and pathological conditions – "norm – sepsis" are presented. For dehydrated blood films, histograms and maps of the amplitude distributions

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