Academic literature on the topic 'Power spectral denstity of noise voltage'

The power spectral density of low frequency resistance fluctuation in heterocyclic conducting polymer thin film resistors was measured at various temperatures and bias current values. An accurate calculation of the background noise was performed in order to correct the measured power spectral densities. A parameter obtained normalizing the voltage power density to the sample volume and d.c. bias is used to compare the tested conducting polymers with various materials used for resistors fabrication.

A low frequency noise and charge carriers transport mechanism analysis was performed on tantalum capacitors in order to characterise their quality and reliability. The model ofTa−Ta2O5−MnO2MIS structure was used to give physical interpretation of VA characteristic both in normal and reverse modes. The self-healing process based on the high temperatureMnO2−Mn2O3transformation was studied and its kinetic determined on the basis of noise spectral density changes. The correlation between leakage current and noise spectral density was evaluated and noise reliability indicator was suggested. In normal mode the noise spectral density at rated voltage increases with second power of current and it varies within two decades for given leakage current value. In reverse mode there is only weak correlation and for given applied voltage, the leakage current for all ensemble varies only by one order, whereas the noise spectral density of the same samples spread in five orders.

The conversion mechanisms of microscopic low frequency noise sources (e.g. generation-recombination noise sources) located in the channel of a FET (Field Effect Transistor), in the presence of a large RF signal, are investigated. It is shown that the base-band (low frequency) input gate noise voltage spectral density is strongly dependent on the magnitude of the input RF power applied to the FET. Moreover, the microscopic generation-recombination noise sources distributed along the channel are also responsible of up-converted input gate noise voltage spectral density around the RF frequency.

Background: A tunable CMOS active inductor/resonator based Voltage Controlled Oscillator (VCO) has been presented. In the design of LC-VCO, LC resonator (tank) circuit has been substituted with gyrator based CMOS active inductor/resonator. The purity of VCO output signal is defined by the phase noise parameter. Methods: For good spectral purity of VCO output signal, the phase noise should be minimum. Moreover, the quality factor of LC resonator is inversely proportional to the phase noise of VCO output signal. In the presented work, a high-quality active inductor/resonator circuit has been used to design VCO which minimizes the phase noise and chip area as well. Further, other VCO characterization factors are measured. Results: The designed circuit has been implemented in 0.18µm CMOS technology. Conclusion: The design of the proposed AI based voltage controlled oscillator shows better phase noise, less chip area and high output power. The high output power is achieved at the cost of limited tuning range of 1.14 GHz ~ 2.1 GHz. The presented active inductor based voltage controlled oscillator can be used for RF applications from 1.14GHz ~ 2.1GHz.

The transfer and low frequency noise characteristics of hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) were measured in the temperature range of 230–430 K. The variation of threshold voltage, field effect mobility and sub-threshold swing with increasing temperatures were then extracted and analyzed. Moreover, the shifts of low frequency noise in the a-Si:H TFT under various temperatures are reported for the first time. The variation of flatband voltage noise power spectral density with temperature is also calculated and discussed.

Abstract The paper presents the method and results of low-frequency noise measurements of modern mid-wavelength infrared photodetectors. A type-II InAs/GaSb superlattice based detector with nBn barrier architecture is compared with a high operating temperature (HOT) heterojunction HgCdTe detector. All experiments were made in the range 1 Hz - 10 kHz at various temperatures by using a transimpedance detection system, which is examined in detail. The power spectral density of the nBn’s dark current noise includes Lorentzians with different time constants while the HgCdTe photodiode has more uniform 1/f - shaped spectra. For small bias, the low-frequency noise power spectra of both devices were found to scale linearly with bias voltage squared and were connected with the fluctuations of the leakage resistance. Leakage resistance noise defines the lower noise limit of a photodetector. Other dark current components give raise to the increase of low-frequency noise above this limit. For the same voltage biasing devices, the absolute noise power densities at 1 Hz in nBn are 1 to 2 orders of magnitude lower than in a MCT HgCdTe detector. In spite of this, low-frequency performance of the HgCdTe detector at ~ 230K is still better than that of InAs/GaSb superlattice nBn detector.

Two sets of 4H-SiC signal-lateral JFETs were thermally aged at 400°C and 500°C in furnaces open to air for 1000 hours. I"-" V and low frequency noise measurements were performed on these devices and the results were compared against the as-fabricated sample. The data from I"-" V characterisation demonstrates that the linear and saturated drain-source current decreases monotonically with stress temperature. In addition, the linear characteristics of the JFETs have shifted approximately 1.5V along the drain-source voltage axis. Whilst the devices thermally aged at 400°C show no degradation in magnitude and behaviour in Noise Power Spectral Density (NPSD), the NPSD of 500°C stressed devices has increase approximately 30dB and it shows a full frequency spectrum of 1/ƒ dependency up to 100 kHz. A further investigation of the noise origin reveals that the Normalised Noise Power Spectral Density (NNPSD) of the aged sample is directly proportional to RDSwhich is similar to the as-fabricated sample. Thus we hypothesize that the existing noise sources have intensified possibly due to the evolution of defects.

The article presents a novel design of a microwave chaotic oscillator. The oscillator contains an inertial converter for the nonlinear amplifier output signal that modulates the supply voltage of the transistor. When the inertia of the converter becomes less than 0.06, the oscillator demonstrates chaotic behavior. We present an experimental model of a chaotic oscillator based on a high power transistor 2T982A-2. The inertial converter circuit contains a diode that perform half-wave conversion of a part of the output signal and a RC circuit with a time constant equal to 0.05 of the duration of an oscillation at the central frequency of the oscillator. The output signal of the inertial converter has been applied to the emitter power supply circuit of the transistor. Modulation of the supply voltage caused the output signal of the oscillator to become a sequence of non-repeating oscillation trains with a random duration and initial phase. The frequency band of the generated chaos with an uneven power spectrum of 4 dB was in a range from 3.1 to 3.3 GHz with an integrated power of 1.2 W. The averaged spectral density of noise oscillations was 6 10-3 W / MHz. Efficiency of the oscillator was 15%.

The use of distributed generation (DG) plants in power supply systems is a rapid development line. However, the impact of DG on power quality is multivalued. On the one hand, the presence of DG allows to reduce voltage losses. On the other hand, a phenomenon called flicker and associated with rapid voltage fluctuations is possible. This effect is usually manifested at an abrupt voltage drop in the DG generator connection unit. The processes taking place in the network when flicker occurs in networks with DG have not been sufficiently studied. The article presents results of the flicker modeling in a network equipped with DG plants, implemented on the basis of synchronous generators. The results obtained indicated that with sharp disturbances caused by switching on and off an additional load, flicker is observed in networks with unregulated generators, accompanied by voltage and frequency fluctuations. Based on the wavelet transformation and spectral analysis methods, it was found that the power spectral density of the generated flicker-noise is inversely proportional to the frequency. The use of look-ahead control algorithms to control the excitation and rotors rotational speed of the DG plants generators, as well as concordant adjustment of their controllers, increases stability and removes flicker completely.

Low frequency noises in the p-type polycrystalline silicon thin film transistors are investigated. It shows a pure 1/f[Formula: see text] (with [Formula: see text] near one) noise behavior which can be explained by emission and trapping processes of carriers between trapping states. Subsequently, the gate voltage-dependent drain current noise power spectral densities closely follow the mobility fluctuation model, and the average Hooge’s parameter is then extracted. By considering traditional tunneling processes, the flat-band voltage spectral density is extracted and the concentration of traps in the grain boundary is calculated to be [Formula: see text]. By converting the frequency to tunneling depth of carriers in the gate oxide, the spatial distribution of gate oxide trapped charges are obtained. Finally, the distribution of localized states in the energy band is extracted. The experimental results show an exponential deep states and tail states distribution in the band gap while [Formula: see text] is about [Formula: see text], [Formula: see text] is [Formula: see text][Formula: see text]617 K, [Formula: see text] is [Formula: see text] and [Formula: see text] is [Formula: see text][Formula: see text]265 K.

In our work the analysis of electrical and noise characteristics of piezoceramic acoustic emission sensors is accomplished. The objective of our work is to analyze and optimize the signal-to-noise ratio. The starting point is the explanation of the noise origin in the acoustic emission sensors. The voltage fluctuation is caused by the dipole vibrations due to their interaction with phonons. The frequencies of dipoles vibrations have statistical distribution and the total energy of these vibrations is proportional to the temperature. The statistical distribution of vibration frequencies leads to the origination of the 1/f type noise spectral density. The interaction between the phonons and electric dipoles is characterized by the imaginary part of susceptibility which is related to the transformation of electric energy to the mechanical energy of vibrations. This process is irreversible and this forms important theoretical question whether the Callen-Welton fluctuation dissipation theorem could be used for the description of fluctuation processes in the acoustic emission sensors. In our work the influence of the real and imaginary part of the susceptibility on the noise and electrical characteristics is solved, the dissipation of electrical energy characterized by the imaginary part of susceptibility is described and the connection between the imaginary part of susceptibility and the noise power spectral density is discussed. Due to the fact that these processes originate in the interaction between electrical dipoles and phonons, we give account of the temperature dependencies of equivalent series resistance and power spectral density of noise voltage, respectively. Piezoceramics stiffness contribute significantly to the resonance creation hence the pressure influence on the sensor noise characteristics was studied. The signal-to-noise ration improvement requires the piezoceramic sample diameter increase for its constant thickness. The ratio of the noise spectral density and sensitivity is independent on the sample thickness. The noise voltage is proportional to the square root of spectral density and frequency bandwidth that is why for the high signal-to-noise ratio it is necessary to minimize the signal amplifier frequency bandwidth. The noise voltage power spectral density increases with the temperature while the activation energy is 20 meV for the temperature 300 K, and 80 meV for the temperature 400 K, respectively. The power spectral density of planar oscillations decreases with increasing pressure and simultaneously the resonant frequency increases. The bandwidth of the normalized spectral density increases with the pressure for the planar oscillations while is invariable for the thickness oscillations. For the examination of the influence of the piezoceramic electrical polarization on the electrical and noise characteristics the experimental study of these dependencies was accomplished for samples without polarization, and samples polarized by electric field EP = 500V/mm and 1000V/mm, respectively. The samples without polarization show the noise of 1/f type only which corresponds to the Callen-Welton fluctuation dissipation theorem. The polarization leads to the generation of planar and thickness oscillations and the power spectral density of voltage fluctuation on the electrodes is proportional to the temperature, and inversely proportional to the imaginary part of permittivity, to the sample area S, and the frequency f.

Abstract The paper discusses the Cryogenic Pumps Condition Monitoring and Machinery Diagnostics Systems, including the automated Expert Diagnostics Systems. The Cryogenic Pump construction differs by design, failure modes and criticality and no single solution will suit all designs. Therefore, two approaches are discussed: Motor Current Signature Analyses and Vibration Analyses. The paper further shows the real case studies, diagnostics and findings on Cryogenic Pumps using both analyses. The article addresses common failure types and proposes applicable solutions. The Cryogenic Pumps mechanical and electrical malfunctions are discussed, their reflection on the dynamic current spectrum using improved Motor Current Signature Analysis (MCSA), aka. Model-Based Voltage and Current (MBVI) Analyses and vibration spectrum using Vibration Analyses (VA). The article contrasts the similarities vs. differences and advantages vs. disadvantages of both methods and may be of value for field engineers to understand the pros. and cons. of each technology. The paper outlines the Expert Diagnostics System based on MBVI, able to distinguish automatically among different malfunctions. The Expert System uses the power spectral density of the difference between the expected current obtained from the model and the actual current. These differences include only abnormalities generated by the motor anomaly. Therefore, they are immune to the noise or harmonics present in the supply voltages. The presented results, using both approaches: Model-Based Voltage and Current Analyses and Vibration Analyses, prove the potential of both techniques and the advantages of their combined use for reaching a maximum reliable Condition Monitoring and Diagnostics of Cryogenic Pumps.

The increasing need for lightweight structures in Unmanned Aerial Vehicle (UAV) applications raise issues involving gust alleviation. Here we examine the gust alleviation problem using a self-sensing, self-charging, and self-actuating structure. The basic idea is that the wing itself is able to harvest and store energy from the normal vibrations during flight along with any available sunlight. If the wing experiences any strong, unexpected wind gust, it will sense the increased vibration levels and provide vibration control to maintain its stability. In this paper, a multifunctional wing spar is designed, which integrates a flexible solar cell array, piezoceramic wafers, a thin film battery and an electronics module into a composite structure. This multifunctional wing spar therefore carries on the functions of energy harvesting and storage, as well as the functions of gust alleviation via piezoelectric materials. The piezoceramic wafers act as sensors, actuators, and harvesters. The global modulus and stiffness of this multifunctional wing spar are estimated using both the rule of mixtures and the cross section transformation method. These values are then used in an Euler-Bernoulli cantilever beam model of the multifunctional spar. The first two dominant modes are predicted analytically for the distributed parameter model. The finite element method is employed to confirm the analytical eigenvalues estimation. Special attention is given to the self-contained gust alleviation with the goal of using harvested energy. The gust signals are generated using a Gaussian white noise source n (t) ∼ N (0,1) fed into a linear filter, with the required intensity, scale lengths, and power spectral density (PSD) function for the given flight velocity and height. The Dryden PSD function is implemented for atmospheric turbulence modeling. The recently developed reduced energy control law is combined with a positive strain feedback controller to minimize the actuation energy and the dissipated heat energy. Positive feedback operation amplifiers (op-amps) and voltage buffer op-amps are implemented for two dominant mode gust disturbance controls. This work builds off of our previous research in self-charging structures and holds promise for improving UAV performance in wind gust alleviation.