Relevant bibliographies by topics / Power thyristor

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Power thyristor'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Power thyristor"

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Jin, Xing, and Kai Hu. "The Design of Trigger Circuit for Power Thyristor." Applied Mechanics and Materials 416-417 (September 2013): 589–92. http://dx.doi.org/10.4028/www.scientific.net/amm.416-417.589.

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In this paper, for the strong electromagnetic interference environment, a kind of 6500V/1000A thyristor controller is designed. The controller includes a main trigger state detection module, an optical fiber communication module, a temperature detection module, a main controller module, and a trigger module. It highlights the thyristor trigger circuit and its corresponding detection circuit, this trigger circuit can provide a strong trigger pulse to ensure a reliable triggering of thyristors at any moment, the detection circuit can improve the reliability of the system.
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Zhang, Chi, and Ming Zhi He. "Regulator Circuit Transformer Voltage-Second Product Analysis." Applied Mechanics and Materials 529 (June 2014): 501–5. http://dx.doi.org/10.4028/www.scientific.net/amm.529.501.

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With the continuous development of power electronic technology, the advantages of thyristor power regulator circuit gradually get more and more applications. It improves the quality of power supply, makes the equipment efficiency and power factor higher and so saves a lot of electricity. Through the calculation of the primary current when thyristor turns off in three-phase power regulator circuit with transformer load, the impact of the thyristors turn-off order on the transformer primary current voltage-second product is analysised, and through simulation the exactness is verified.
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Nowak, Karol, Jerzy Janiszewski, and Grzegorz Dombek. "A Multi-Sectional Arc Eliminator for Protection of Low Voltage Electrical Equipment." Energies 13, no. 3 (2020): 605. http://dx.doi.org/10.3390/en13030605.

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The paper presents a system of two oppositely connected multi-sectional thyristor branches. The system works as a multi-sectional arc eliminator (MSAE), protecting low-voltage electrical apparatus against the effects of an arcing fault. MSAE is designed to serve as a device cooperating with protected and secured electrical equipment. The use of thyristors in the proposed solution allows to obtain a high speed of operation, while multi-sectional thyristor branches significantly increase the permissible current load of the arc eliminator. A test circuit was designed and made to test the performance effectiveness of the multi-sectional thyristor arc eliminator. A number of tests were carried out with variable current values in the arc branch, taking into account the influence of thyristor conduction voltage and different thyristor gate release times. It was found that the multi-section thyristor arc eliminator system effectively protects devices powered from low voltage power network against the effects of interference or arc fault.
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Bimali, Bibek, Sushil Uprety, and Ram Prasad Pandey. "VAR Compensation on Load Side using Thyristor Switched Capacitor and Thyristor Controlled Reactor." Journal of the Institute of Engineering 16, no. 1 (2021): 111–19. http://dx.doi.org/10.3126/jie.v16i1.36568.

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Generally, AC loads are the inductive loads which are reactive in nature. These loads, thus, demand and draw reactive power from the supply source. If these loads draw large lagging current from the source, this will cause excessive voltage drop in the line, which can even cause the voltage collapsing in the line itself if the drop in the line is excessively high. VAR compensation means efficient management of reactive power locally to improve the performance of AC power systems. In this paper, Static VAR Compensator, using TSC (Thyristor Switched Capacitor) and TCR (Thyristor Controlled Reactor), is designed and simulated in MATLAB to maintain the power factor of power system nearly to unity at all times. TSC and TCR are basically shunt connected capacitors and inductor respectively whose switching (of capacitors) and firing angle control (of inductor) operations are carried out using thyristors. The purpose of capacitors is to supply lagging VAR as per the demand by the connected loads and the overcompensation due to excess VAR generated by the discrete set of turned on capacitors are absorbed by the adjustable inductive reactance of the inductor in TCR branch through firing angle control mechanism.
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Mounika, G. "Closed Loop Reactive Power Compensation on a Single-Phase Transmission Line." International Journal for Research in Applied Science and Engineering Technology 9, no. VI (2021): 2149–55. http://dx.doi.org/10.22214/ijraset.2021.35486.

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Nowadays the power consumption is increasing significantly. Due to this, the transmission lines are heavily loaded and in turn results in instability of the line. So orderly transmission of power is essential. For the proper operation of the load the voltage has to be maintained within the acceptable limit. Due to the changes in load, the voltage level of the line also changes. The voltage levels can be improved by using the reactive power compensator like capacitor banks, series compensator, STAT COM and svc. Here, we considered the SVC as reactive power compensator. This paper presents the reactive power compensation for a 230v transmission line model with variable inductive load using SVC and designed in Simulink. Here we considered the SVC model which contains of anti-thyristors in series to the inductor and a shunt capacitor. The required reactance is fed from the inductor to the transmission line by changing the gate triggering pulse to the thyristor pair. So, the main disadvantage of the open loop var compensation using svc is the triggering to the thyristor pair has to be changed every time depending on the load. This can overcome by implementing it using the feedback loop. Here for the feedback, we used the PI controller. under The PI controller gives the required gating pulse to the thyristor pair. The performance of this model is studied variable load conditions.
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Gheydi, Milad, and Farshid Abdolahnejad Baroogh. "Improving Voltage Profile and Reducing Network Losses by Integration of Wind Farm and Thyristor-Switched Series Capacitors." International Journal of Advances in Applied Sciences 6, no. 2 (2017): 145. http://dx.doi.org/10.11591/ijaas.v6.i2.pp145-155.

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This paper aims at improving voltage profile and reducing the losses of active and reactive powers. The impact of wind turbines on voltage profile and power losses in critical buses is evaluated. Wind turbines, reactive power resources, i.e. thyristor-switched series capacitors, are connected to the network in mentioned states. In this study different conditions are individually and simultaneously considered with/without the wind turbines and thyristor-switched series capacitors in normal states of the network. Next, voltage profile, active power, reactive power, and the network losses are dealt with in the presence/absence of wind turbines and thyristor-switched series capacitors considering a sudden fault occurred in one power line, and the simulation results are compared with each other. The results indicate that using thyristor-switched capacitors together with the wind farm can provide enough active and reactive power for the network which increases the network capacity and decreases its losses using genetic algorithms.
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Kuznetsov, V. A., G. D. Polkovnikov, V. E. Gromov, V. A. Kuznetsova, and O. A. Peregudov. "High power current pulse generator based on reversible thyristor converter." Izvestiya. Ferrous Metallurgy 62, no. 12 (2020): 964–71. http://dx.doi.org/10.17073/0368-0797-2019-12-964-971.

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In metal forming using high power current pulses, it becomes necessary to control both reproduction frequency and pulse amplitude. Description of a generator of high power current pulses with controlled thyristor converter is provided as a power source of charging device (charger) for regulating voltage (pulse amplitude) of capacitor charge. Faults of the generators associated with inrush current in capacitor charge modes are revealed, which reduces quality of supply network. To reduce time of transient processes while lowering voltage across capacitors, application of reverse thyristor converter is applied as a power source. Structural diagram of generator is considered, which includes reversible thyristor converter with separate control, power unit, capacitor recharge device, charger parameters automatic control system and capacitor charge process control system. Calculation of parameters of automatic control system regulators is presented. To obtain optimal transients, standard methodology for setting regulators to a modular optimum was used. In order to reduce overshoot at time of disturbances appearance, which can reach 100 % and higher, socalled logical device was introduced into the automatic control system. It blocks control pulses on thyristors of converter and simultaneously reduces signal at the output of current regulator to zero. Simulation model of high power current pulse generator in MatLab – Simulink environment was synthesized. Analysis of the model was carried out, and graphs are given that explain principle of device operation and transition processes under various operating modes. Generator application will allow user to adjust amplitude of current pulses with high speed and to obtain sufficiently high-quality transient processes of capacitors charge (discharge), which will have beneficial effect on supply network. Application of better converters will significantly increase frequency of reproduction of current pulses.
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Yu, Gui Yin. "The High-Power of DC Power with Auto Tracking Power Frequency." Advanced Materials Research 383-390 (November 2011): 321–24. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.321.

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This paper analyzes the reason that the common thyristor trigger is unable to fulfill power supply in wide range changes of frequency. The high precise frequency/voltage converter is used to monitor and track frequency changes of the simultaneous power supply. The simultaneous signal and charge current source are provided by the converter for saw tooth wave trigger. The frequency of saw tooth wave changes as the same time the frequency of power supply changes in wide range. However, the amplitude of the saw tooth wave can be kept constant. This can achieve the controlled angle of the thyristor trigger does not change with the large-scale voltage frequency changes of the simultaneous power supply when the same Phase-shifted control voltage was used.
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Seifert, W., and A. A. Jaecklin. "An FET-driven power thyristor." IEEE Transactions on Electron Devices 34, no. 5 (1987): 1170–76. http://dx.doi.org/10.1109/t-ed.1987.23060.

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Dheilly, Nicolas, Gontran Pâques, Dominique Planson, Pascal Bevilacqua, and Sigo Scharnholz. "Optical Triggering of 4H-SiC Thyristors with a 365 nm UV LED." Materials Science Forum 679-680 (March 2011): 690–93. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.690.

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Direct light triggering of 4H-SiC thyristors with a 365 nm UV LED was demonstrated. Two different structures with etched and non etched gate were successfully tested. The current rise time was less than 100 ns and the delay time as short as 1.5 μs. The optical energy density necessary to switch-on a thyristor has been studied for different optical power densities and bus voltages. This work shows that the UV LED technology is becoming sufficiently powerful to switch-on SiC thyristors. Thus, an alternative, less expensive and more compact gate light source than UV laser is now possible. This can be of particular interest for very high voltage and pulse power electronic applications.
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Dissertations / Theses on the topic "Power thyristor"

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You, Budong. "Investigation of MOS-Gated Thyristors and Power Diodes." Diss., Virginia Tech, 2000. http://hdl.handle.net/10919/26094.

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The MOS-gated thyristors (MGT) refer to the class of power devices that combine the ease of a MOS gate control with the superior current carrying capability of a thyristor structure for high-power applications. The MOS-controlled thyristor (MCT) is a typical MGT device. A comprehensive investigation of the reverse-biased safe operating area (RBSOA) characteristics of the MCT has been undertaken. The electrical failure mechanisms of the MCT are discussed, and the relationship between the dynamic avalanche limited RBSOA boundary of the MCT and the lower open-base transistor is identified. An analytical model based on the dynamic current gain concept is proposed to characterize the open-base transistor. For the first time, a RBSOA characteristic equation is developed for the MCT and a unified view of the RBSOA characteristics of the MCT is presented. The fundamental characteristics of the MCT are compared to those of the insulated gate bipolar transistor (IGBT) at two levels: unit-cell and multi-cell. The investigation of the unit-cell level focuses on the tradeoff between the on-state voltage drop, the turn-off loss, and the RBSOA characteristic. The investigation of the multi-cell level reveals the fundamental difference between the MCT and the IGBT in handling the non-uniform turn-off caused by the internal propagation gate delay of a large-area device. Lack of current saturation capability is identified as the main reason for the severe degradation of the turn-off capability of a large-area multi-cell MCT. The current saturation and controlled turn-on capabilities can be realized in the MGT devices with dual operation modes. For the first time, a dual operation mode MCT developed with superior current saturation capability is used to demonstrate how the dual operation device can be beneficial in the switching circuit application. The maximum controllable current density (Jmcc) is the most important characteristic of the dual operation mode MGT devices. A first-order analytic model is developed to characterize the Jmcc of the dual operation mode MGT structures compatible with the IGBT fabrication process. A new device structure with improved Jmcc characteristics is proposed and verified by both simulation and experimental results. The dissertation also carries out a comprehensive investigation of the development of power diodes. A new power diode, called the Trench Bipolar Junction Diode (TBJD), which has superior dynamic characteristics over the conventional P-i-N diode, is proposed. The TBJD controls the anode injection efficiency of the diode by the action of a reverse active transistor structure integrated into its anode junction. The reverse active transistor helps tailor an optimized on-state carrier profile to improve the diode switching characteristics. A novel self-aligned process is developed to fabricate the TBJD. Experimental characterization of the fabricated TBJD devices shows that the TBJD achieves superior dynamic characteristics without sacrificing the on-state voltage drop and the leakage current characteristics.<br>Ph. D.
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Liu, Yin. "Design and Fabrication of the Emitter Controlled Thyristor." Thesis, Virginia Tech, 2001. http://hdl.handle.net/10919/33671.

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The Emitter Controlled Thyristor (ECT) is a new MOS-Gated Thyristor (MGT) that combines the ease of a MOS gate control with the superior current carrying capability of a thyristor structure for high-power applications. An ECT is composed of an emitter switch in series with the thyristor, an emitter-short switch in parallel with the emitter junction of the thyristor, a turn-on FET and the main thyristor structure. Numerical analysis shows that the ECT also offers superior high voltage current saturation capability even for high breakdown voltage ratings. Two different ECT structures are investigated in this research from numerical simulations to experimental fabrications. A novel ECT structure that utilizes IGBT compatible fabrication process was proposed. The emitter short FET, emitter switch FET and turn-on FET are all integrated with a high voltage thyristor. Numerical simulation results show that the ECT has a better conductivity modulation than that of the IGBT and at the same time exhibits superior high voltage current saturation capability, superior FBSOA and RBSOA. The technology trade-off between turn-off energy loss and forward voltage drop of the ECT is also better than that of the IGBT because of the stronger conductivity modulation. A novel self-aligned process is developed to fabricate the device. Experimental characteristics of the fabricated ECT devices show that the ECT achieves lower forward voltage drop and superior high voltage current saturation capability. A Hybrid ECT (HECT) structure was also developed in this research work. The HECT uses an external FET to realize the emitter switching function, hence a complicated fabrication issue was separated into two simple one. The cost of the fabrication decreases and the yield increases due to the hybrid integration. Numerical simulations demonstrate the superior on-state voltage drop and high voltage current saturation capability. A novel seven-mask process was developed to fabricate the HECT. Experimental results show that the HECT could achieve the lower forward voltage drop and superior current saturation capability. The resistive switching test was carried out to demonstrate the switching characteristics of the HECT.<br>Master of Science
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Uz, Eda. "Design And Implementation Of Thyristor Switched Shunt Capacitors." Master's thesis, METU, 2010. http://etd.lib.metu.edu.tr/upload/12611616/index.pdf.

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This research work deals with the analysis, design and implementation of thyristor switched plain capacitor banks and thyristor switched shunt filter banks. Performances of various thyristor switched capacitor (TSC) topologies are also investigated by simulations. The theoretical findings have been verified by carrying out experimental work on two prototypes implemented within the scope of this research work, one is a wye-connected laboratory prototype and the other is a delta-connected application prototype integrated to some of the SVCs existing in Turkish Coal Enterprise s Plants. The advantages of back-to-back connected thyristor switches over conventional electromechanical contactors are also made clear by conducting an intensive experimental work in the laboratory. A good correlation have been obtained between theoretical and experimental results.
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Chen, Wei. "Fast switching low power loss devices for high voltage integrated circuits." Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.262863.

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Genc, Murat. "Design And Digital Implementation Of Thyristor Controlled Reactor Control." Master's thesis, METU, 2007. http://etd.lib.metu.edu.tr/upload/3/12609184/index.pdf.

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In this research work, the control system of 16 MVAr, 13.8 kV TCR will be designed and digitally implemented. A Real-Time Control System (NI CompactRIOTM Reconfigurable I/O) and a Digital Platform (NI LabVIEWTM Gcode) are used in the digital implementation of TCR control system. The digital control system is composed of reactive power calculation, firing angle determination and triggering pulse generation blocks. The performance of control system will be tested in the field. The simulation results will also be compared with test data.
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何沛德 and Pui-tak Ho. "Control and operation of high-performance thyristor-controlled-reactor(TCR) compensators." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1988. http://hub.hku.hk/bib/B31231160.

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Fan, Lingling. "Robust decentralized control of power systems through excitation systems and thyristor controlled series capacitors." Morgantown, W. Va. : [West Virginia University Libraries], 2001. http://etd.wvu.edu/templates/showETD.cfm?recnum=2242.

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Thesis (Ph. D.)--West Virginia University, 2001.<br>Title from document title page. Document formatted into pages; contains x, 121 p. : ill. (some col.). Vita. Includes abstract. Includes bibliographical references (p. 99-103).
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Motto, Kevin. "Application of High-Power Snubberless Semiconductor Switches in High-Frequency PWM Converters." Thesis, Virginia Tech, 2000. http://hdl.handle.net/10919/35778.

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For many years, power electronics in the high-power area was performed with extremely slow semiconductor switches. These switches, including the thyristor and the Gate Turn-Off (GTO) thyristor, had the capacity to handle very high voltages and currents but lacked the ability to perform high frequency switching. Low-power converters, such as computer power supplies and low horsepower motor drives, have employed high-frequency switching for years and have benefited from very nice output waveforms, good control dynamic performance, and many other advantages compared to low frequency switching. Recent improvements in high-power semiconductor technology has brought switching performance similar to that of the low-power MOSFETs and IGBTs to the high-power area through the advancement of the IGBT's ratings to create the High Voltage IGBT (HVIGBT) and the development of new GTO-derived devices including the Integrated Gate Commutated Thyristor (IGCT) and the Emitter Turn-Off (ETO) thyristor. These new devices all feature high switching speed and the capability to turn off without the requirement for a turn-off snubber. With these new device technologies the high-power field of power electronics can realize dramatic improvements in the performance of systems for utility applications and motor drives. However, with these high-speed switches come new issues relating to noise, protection, performance of diodes, and thermal management in high-frequency applications. This thesis addresses the application of these new devices, especially the ETO and the IGCT. Examples of each device technology (IGBT, IGCT, and ETO) have been characterized in both their switching performance and conduction loss. The tests performed show how these new devices may be applied to various applications. The switching loss, especially related to turn-off, is the dominant factor in the power dissipation of the high-power switches, so knowledge of these characteristics are very important in the system design. To demonstrate the operation of the ETO, two power converters were constructed. The first was a 100 kW DC/DC converter, which demonstrated the operation of the ETO in a typical building block configuration, the half-bridge. The second system, a 1 MegaVolt-Amp (MVA) three-phase inverter, demonstrated the ETO in an application where the switching frequency and power level were both high. The test results demonstrate the expected characteristics of the high-frequency converters. The development of the ETO's gate driver is described. During the inverter testing, a new failure mode was found involving a parasitic diode within the ETO. This failure mode was analyzed and solutions were proposed. One of the proposed solutions was implemented and there were no more failures of this type. Another possible failure mode regarding a circulating current in an IGCT-based system is also analyzed. Soft-switching techniques can help reduce the switching loss in power semiconductor switches. Several topologies were considered for application in the high-power area, and one was selected for further investigation. A prototype Zero Current Transition (ZCT) circuit was developed using an IGCT as the main switch. The turn-off loss was reduced dramatically through the tested ZCT circuit, and the diode recovery was also alleviated.<br>Master of Science
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Perkins, Brian Kenneth. "Dynamic modelling of thyristor-based static switching circuits with application to power systems." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp02/NQ28037.pdf.

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Ängquist, Lennart. "Synchronous Voltage Reversal Control of Thyristor Controlled Series Capacitor." Doctoral thesis, KTH, Electrical Systems, 2002. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3396.

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<p>Series compensation of transmission lines is an effectiveand cheap method of improving the power transmission systemperformance. Series capacitors virtually reduces the length ofthe line making it easier to keep all parts of the power systemrunning in synchronism and to maintain a constant voltage levelthroughout the system. In Sweden this technology has been inuse since almost 50 years.</p><p>The possibility to improve the performance of the ACtransmission system utilizing power electronic equipment hasbeen discussed a lot since about ten years. Some newsemiconductor based concepts have been developed beside thesince long established HVDC and SVC technologies. The ThyristorControlled Series Capacitor (TCSC) is one such concept. Byvarying the inserted reactance an immediate and well-definedimpact on the active power flow in the transmission line isobtained. Several potential applications, specifically poweroscillation damping, benefit from this capability. The conceptimplied the requirement to design a semiconductor valve, whichcan be inserted directly in the high-voltage power circuit.This certainly presented a technical challenge but thestraightforward approach appeared to be a cost-effectivealternative with small losses.</p><p>It was also realized that the TCSC exhibits quite differentbehaviour with respect to subsynchronous frequency componentsin the line current as compared to the fixed series capacitorbank. This was a very interesting aspect as the risk ofsubsynchronous resonance (SSR), which just involves such linecurrent components, has hampered the use of series compensationin power systems using thermal generating plants.</p><p>The thesis deals with the modelling and control aspects ofTCSC. A simplifying concept, the equivalent, instantaneousvoltage reversal, is introduced to represent the action of thethyristor controlled inductive branch, which is connected inparallel with the series capacitor bank in the TCSC. The idealvoltage reversal is used in the thesis in order to describe andexplain the TCSC dynamics, to investigate its apparentimpedance at various frequencies, as a platform forsynthesizing the boost control system and as the base elementin deriving a linear, small-signal dynamical model of thethree-phase TCSC. Quantitative Feedback Theory (QFT) then hasbeen applied to the TCSC model in order to tune its boostregulator taking into account the typical variation ofparameters that exists in a power system. The impact of theboost control system with respect to damping of SSR is finallybeing briefly looked at.</p><p><b>Keywords:</b>Thyristor Controlled Series Capacitor, TCSC,FACTS, reactive power compensation, boost control, phasorestimation, Quantitative Feedback Theory, subsynchronousresonance, SSR.</p>
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Books on the topic "Power thyristor"

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K, Varma Rajiv, ed. Thyristor-based FACTS controllers for electrical transmission systems. IEEE, 2002.

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Smith, David Michael. GTO thyristor and diode device models for high power circuit simulation. University of Birmingham, 1995.

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Dian li xi tong ke kong chuan lian dian rong bu chang. Ke xue chu ban she, 2009.

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Eicher, Simon. The transparent anode GTO (TGTO): A new low-loss power switch. Hartung-Gorre, 1996.

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Taha, Mohamad Hussein. Two way power flow using GTO thyristors. Aston University. Department of Electronic and Electrical Engineering, 1992.

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Linder, Stefan. Power semiconductors. EPFL Press, 2006.

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Bulatov, O. G. Tiristorno-kondensatornye istochniki pitanii͡a︡ dli͡a︡ ėlektrotekhnologii. Ėnergoatomizdat, 1989.

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Analysis and numerical simulation of current filamentation in power semiconductor devices. Hartung-Gorre, 1993.

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Sturman, John C. High-voltage, high-power, solid-state remote power controllers for aerospace applications. National Aeronautics and Space Administration, Scientific and Technical Information Branch, 1985.

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Sturman, John C. High-voltage, high-power, solid-state remote power controllers for aerospace applications. National Aeronautics and Space Administration, Scientific and Technical Information Branch, 1985.

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Book chapters on the topic "Power thyristor"

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Hoft, Richard G. "Thyristor Choppers." In Semiconductor Power Electronics. Springer Netherlands, 1986. http://dx.doi.org/10.1007/978-94-011-7015-4_10.

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Ramshaw, R. S. "The Thyristor." In Power Electronics Semiconductor Switches. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4757-6219-8_5.

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Gumhalter, Hans. "Thyristor Controlled Rectifiers." In Power Supply in Telecommunications. Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-642-78403-3_10.

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Hoft, Richard G. "Self-Commutated Thyristor Inverters." In Semiconductor Power Electronics. Springer Netherlands, 1986. http://dx.doi.org/10.1007/978-94-011-7015-4_11.

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Williams, B. W. "Thyristor Forced Commutated DC Choppers." In Power Electronics. Macmillan Education UK, 1987. http://dx.doi.org/10.1007/978-1-349-18525-2_13.

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Williams, B. W. "Driving the Thyristor, and its Protection." In Power Electronics. Macmillan Education UK, 1987. http://dx.doi.org/10.1007/978-1-349-18525-2_8.

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Patil, Mahesh, and Pankaj Rodey. "Thyristor Rectifier in Closed Loop." In Control Systems for Power Electronics. Springer India, 2015. http://dx.doi.org/10.1007/978-81-322-2328-3_3.

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Ramshaw, R. S. "The Gate Turn-Off Thyristor (GTO)." In Power Electronics Semiconductor Switches. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4757-6219-8_9.

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Wang, Haifeng, and Wenjuan Du. "Multi-machine Power System Installed with Thyristor-Based FACTS Stabilizers." In Power Electronics and Power Systems. Springer US, 2016. http://dx.doi.org/10.1007/978-1-4899-7696-3_6.

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Bauer, Friedhelm. "The MOS Controlled Thyristor and its Limits." In Power Semiconductor Devices and Circuits. Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3322-1_2.

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Conference papers on the topic "Power thyristor"

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Huramshin, Ruslan, Anatoliy Jaule, and I. Shtennikov. "RESISTIVE EVAPORATOR THYRISTOR POWER SUPPLY RESEARCH." In CAD/EDA/SIMULATION IN MODERN ELECTRONICS 2019. Bryansk State Technical University, 2019. http://dx.doi.org/10.30987/conferencearticle_5e028211830bf5.34464450.

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Gelman, Vitaly. "Why There Is No IGBT Traction Rectifiers?" In 2014 Joint Rail Conference. American Society of Mechanical Engineers, 2014. http://dx.doi.org/10.1115/jrc2014-3802.

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Abstract:
The Insulated Gate Bipolar Transistors (IGBT) are widely used in high power converters. Definite advantages of IGBT rectifiers (also called PWM rectifiers) are: zero reactive power, low harmonics, and inherent power recuperation capability. However stationary traction rectifiers are built with either thyristors or diodes, not with IGBTs. The paper compares IGBT and thyristor rectifiers and analyzes the factors precluding the use of IGBT rectifiers at traction power substations.
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Zaid, S. A. "Thyristor firing circuit synchronization techniques in Thyristor Controlled Series Capacitors." In 2011 International Conference on Clean Electrical Power (ICCEP). IEEE, 2011. http://dx.doi.org/10.1109/iccep.2011.6036272.

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Melissen, W., and G. G. Wajer. "High Voltage Thyristor Switch." In 2007 IEEE Pulsed Power Plasma Science Conference. IEEE, 2007. http://dx.doi.org/10.1109/ppps.2007.4345652.

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Schneider, S., and T. F. Podlesak. "Multichip thyristor performance." In Conference Record of the 2000 Twenty-fourth International Power Modulator Symposium. IEEE, 2000. http://dx.doi.org/10.1109/modsym.2000.896164.

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Iwamoto, H., T. Nakagawa, F. Tokunoh, et al. "12kV, 1kA thyristor." In 1990 The 2nd International Symposium on Power Semiconductor Devices and Ics. IEEE, 1990. http://dx.doi.org/10.1109/ispsd.1990.991097.

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Vobecky, Jan, Umamaheswara Vemulapati, and Renata Bessa-Duarte. "Bidirectional Phase Control Thyristor (BiPCT): A New Antiparallel Thyristor Concept." In 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2020. http://dx.doi.org/10.1109/ispsd46842.2020.9170072.

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Arsov, Goce L., and Slobodan Mircevski. "Quo vadis, thyristor?" In 2010 14th International Power Electronics and Motion Control Conference (EPE/PEMC 2010). IEEE, 2010. http://dx.doi.org/10.1109/epepemc.2010.5606789.

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Hudgins, J. L., and W. M. Portnoy. "Fast transient behavior of thyristor switches." In 1985 IEEE Power Electronics Specialists Conference. IEEE, 1985. http://dx.doi.org/10.1109/pesc.1985.7070981.

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Das, Bhaba Priyo, Neville R. Watson, and Yonghe Liu. "Mains Synchronisation for Thyristor Rectifiers." In 2011 Asia-Pacific Power and Energy Engineering Conference (APPEEC). IEEE, 2011. http://dx.doi.org/10.1109/appeec.2011.5748540.

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Reports on the topic "Power thyristor"

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Marneris I., V. Badea, R. Bonati, and J. Sandberg. Thermal Analysis of 480 volt Disconnect Switches Feeding Thyristor Control Power Supplies. Office of Scientific and Technical Information (OSTI), 2007. http://dx.doi.org/10.2172/1061872.

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