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Journal articles on the topic 'Pre amorphization'

Author: Grafiati

Published: 25 May 2024

Last updated: 31 July 2025

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1

Yunin, P. A., M. N. Drozdov, A. V. Novikov, et al. "Complex Diagnostics of Silicon-on-Insulator Layers after Ion Implantation and Annealing." Поверхность. Рентгеновские, синхротронные и нейтронные исследования, no. 5 (September 22, 2024): 61–68. http://dx.doi.org/10.31857/s1028096024050094.

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A technology was developed for activating ion-implanted dopants in silicon-on-insulator layers at a low annealing temperature (600°C) using the pre-amorphization technique of a silicon device layer. In the case of phosphorus implantation, silicon was amorphized directly by dopant ions. In the case of boron implantation for pre-amorphization, the layers were preliminary irradiated with argon or fluorine ions. Complex diagnostics of the implanted layers was carried out using secondary ion mass spectrometry, X-ray diffractometry and small-angle X-ray reflectometry. The combination of methods made

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2

Andrzejewski, M., N. Casati, and A. Katrusiak. "Reversible pressure pre-amorphization of a piezochromic metal–organic framework." Dalton Transactions 46, no. 43 (2017): 14795–803. http://dx.doi.org/10.1039/c7dt02511d.

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3

Wen, D. S., J. Liu, C. M. Osburn, and J. J. Wortman. "Interface Traps Caused by Ge Pre‐Amorphization." Journal of The Electrochemical Society 132, no. 10 (1985): 2514–16. http://dx.doi.org/10.1149/1.2113613.

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4

Schreutelkamp, R. J., J. S. Custer, J. R. Liefting, W. X. Lu, and F. W. Saris. "Pre-amorphization damage in ion-implanted silicon." Materials Science Reports 6, no. 7-8 (1991): 275–366. http://dx.doi.org/10.1016/0920-2307(91)90001-4.

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5

Cellini, C., A. Carnera, M. Berti, et al. "Pre-amorphization damage study in as-implanted silicon." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 96, no. 1-2 (1995): 227–31. http://dx.doi.org/10.1016/0168-583x(94)00488-9.

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6

Hempel, Nele-Johanna, Matthias M. Knopp, Ragna Berthelsen, and Korbinian Löbmann. "Convection-Induced vs. Microwave Radiation-Induced in situ Drug Amorphization." Molecules 25, no. 5 (2020): 1068. http://dx.doi.org/10.3390/molecules25051068.

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The aim of the study was to investigate the suitability of a convection oven to induce in situ amorphization. The study was conducted using microwave radiation-induced in situ amorphization as reference, as it has recently been shown to enable the preparation of a fully (100%) amorphous solid dispersion of celecoxib (CCX) in polyvinylpyrrolidone (PVP) after 10 min of continuous microwaving. For comparison, the experimental setup of the microwave-induced method was mimicked for the convection-induced method. Compacts containing crystalline CCX and PVP were prepared and either pre-conditioned at

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7

Murakami, Y., I. Tsunoda, H. Kido та ін. "Enhanced solid-phase growth of β-FeSi2 by pre-amorphization". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 206 (травень 2003): 304–7. http://dx.doi.org/10.1016/s0168-583x(03)00750-x.

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8

Azarov, A. Yu, A. I. Titov, and S. O. Kucheyev. "Effect of pre-existing disorder on surface amorphization in GaN." Journal of Applied Physics 108, no. 3 (2010): 033505. http://dx.doi.org/10.1063/1.3462380.

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9

Li, Hong-Jyh, Peter Zeitzoff, Larry Larson, and Sanjay Banerjee. "B diffusion in Si with pre-amorphization of different species." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 22, no. 5 (2004): 2380. http://dx.doi.org/10.1116/1.1795250.

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10

Delwail, C., S. Joblot, F. Mazen, et al. "Impact of the pre amorphization by Ge implantation on Ni0.9Pt0.1 silicide." Microelectronic Engineering 254 (February 2022): 111705. http://dx.doi.org/10.1016/j.mee.2021.111705.

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11

Felch, S. B., H. Graoui, G. Tsai, and A. Mayur. "Optimization of pre-amorphization and dopant implant conditions for advanced annealing." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237, no. 1-2 (2005): 35–40. http://dx.doi.org/10.1016/j.nimb.2005.04.075.

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12

Sasaki, Y., C. G. Jin, K. Okashita, et al. "New method of Plasma doping with in-situ Helium pre-amorphization." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237, no. 1-2 (2005): 41–45. http://dx.doi.org/10.1016/j.nimb.2005.04.109.

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13

Park, Soon Yeol, Kun-Sik Sung, and Taeyoung Won. "Kinetic Monte Carlo Study on Boron Diffusion with Carbon Pre-implantation after a Pre-amorphization Process." Journal of the Korean Physical Society 58, no. 5(1) (2011): 1434–38. http://dx.doi.org/10.3938/jkps.58.1434.

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14

Quintero, A., F. Mazen, P. Gergaud, et al. "Enhanced thermal stability of Ni/GeSn system using pre-amorphization by implantation." Journal of Applied Physics 129, no. 11 (2021): 115302. http://dx.doi.org/10.1063/5.0038253.

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15

Siegrist, Marco E., Michael Siegfried, and Jörg F. Löffler. "High-purity amorphous Zr52.5Cu17.9Ni14.6Al10Ti5 powders via mechanical amorphization of crystalline pre-alloys." Materials Science and Engineering: A 418, no. 1-2 (2006): 236–40. http://dx.doi.org/10.1016/j.msea.2005.11.024.

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16

Schreutelkamp, R. J., J. S. Custer, J. R. Liefting, et al. "Pre-amorphization damage in Si(100) implanted with high mass MeV ions." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 62, no. 3 (1992): 372–76. http://dx.doi.org/10.1016/0168-583x(92)95259-t.

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17

Park, Soonyeol, Bumgoo Cho, Seungsu Yang, and Taeyoung Won. "Kinetic Monte Carlo (kMC) Simulation of Carbon Co-Implant on Pre-Amorphization Process." Journal of Nanoscience and Nanotechnology 10, no. 5 (2010): 3600–3603. http://dx.doi.org/10.1166/jnn.2010.2263.

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18

Kim, Joong-sik, and Taeyoung Won. "Atomistic modelling for boron diffusion profile in silicon posterior to germanium pre-amorphization." Microelectronic Engineering 84, no. 5-8 (2007): 1556–61. http://dx.doi.org/10.1016/j.mee.2007.01.254.

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19

Park, Soon-Yeol, Young-Kyu Kim, and Taeyoung Won. "Kinetic Monte Carlo study on boron diffusion posterior to pre-amorphization implant process." Microelectronic Engineering 86, no. 3 (2009): 430–33. http://dx.doi.org/10.1016/j.mee.2008.08.010.

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20

Simoen, E., G. Brouwers, A. Satta, et al. "Shallow boron implantations in Ge and the role of the pre-amorphization depth." Materials Science in Semiconductor Processing 11, no. 5-6 (2008): 368–71. http://dx.doi.org/10.1016/j.mssp.2008.09.006.

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21

Park, Soon-Yeol, Young-Kyu Kim, and Taeyoung Won. "Investigation of boron diffusion after pre-amorphization implant with kinetic Monte Carlo approach." Journal of Computational Electronics 7, no. 3 (2008): 419–22. http://dx.doi.org/10.1007/s10825-008-0236-0.

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22

Mao, Shujuan, Guilei Wang, Jing Xu, et al. "Improved Ti germanosilicidation by Ge pre-amorphization implantation (PAI) for advanced contact technologies." Microelectronic Engineering 201 (December 2018): 1–5. http://dx.doi.org/10.1016/j.mee.2018.09.006.

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23

Park, Soon-Yeol, and Taeyoung Won. "Impact of Carbon Co-Implant on the Pre-Amorphization Process: Kinetic Monte Carlo (KMC)." Journal of Computational and Theoretical Nanoscience 6, no. 11 (2009): 2423–26. http://dx.doi.org/10.1166/jctn.2009.1301.

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24

Yu, Min, Rong Wang, Huihui Ji, et al. "Roughness of amorphous/crystalline interface in pre-amorphization implantation: Molecular dynamic simulation and modeling." Microelectronic Engineering 81, no. 1 (2005): 162–67. http://dx.doi.org/10.1016/j.mee.2005.05.003.

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25

Murakami, H., S. Hamada, T. Ono, et al. "Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100)." ECS Transactions 64, no. 6 (2014): 423–29. http://dx.doi.org/10.1149/06406.0423ecst.

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26

Tan, E. J., K. L. Pey, D. Z. Chi, P. S. Lee, and L. J. Tang. "Improved electrical performance of erbium silicide Schottky diodes formed by Pre-RTA amorphization of Si." IEEE Electron Device Letters 27, no. 2 (2006): 93–95. http://dx.doi.org/10.1109/led.2005.863142.

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27

Cheng, Jung-Chien, Jia-En Lee, and Bing-Yue Tsui. "Schottky barrier diodes isolated by local oxidation of SiC (LOCOSiC) using pre-amorphization implantation technology." Solid-State Electronics 171 (September 2020): 107834. http://dx.doi.org/10.1016/j.sse.2020.107834.

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28

Li, Zhong-Hua, Yu-Long Jiang, Run-Ling Li, Yan-Wei Zhang, and Yong-Feng Cao. "Performance Improvement by Cold Xe Pre-Amorphization Implant for Nickel Silicidation of 28-nm PMOSFET." IEEE Electron Device Letters 40, no. 5 (2019): 777–79. http://dx.doi.org/10.1109/led.2019.2907688.

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29

Ryu, Ho Jin, Yeon Soo Kim, G. L. Hofman, J. Rest, Jong Man Park, and Chang Kyu Kim. "Radiation-Induced Recrystallization of U-Mo Fuel Particles and Radiation-Induced Amorphization of Interaction Products in U-Mo/Al Dispersion Fuel." Materials Science Forum 558-559 (October 2007): 319–22. http://dx.doi.org/10.4028/www.scientific.net/msf.558-559.319.

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Two kinds of radiation-induced structural changes were observed in U-Mo/Al dispersion fuel: radiation-induced recrystallization of U-Mo fuel particles and radiation-induced amorphization of interaction products. During irradiation, U-Mo fuel showed refined microstructures of submicron-size grains due to dynamic recrystallization, occurring initially from pre-existing grain boundaries. The interaction products formed by interdiffusion between the U-Mo particles and Al matrix in U-Mo/Al dispersion fuel transformed from crystalline to amorphous during irradiation. In this paper we deal with both

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30

Park, Soon-Yeol, Bum-Goo Cho, Seung-Su Yang, and Taeyoung Won. "Kinetic Monte Carlo (kMC) Study of the Effect of CarbonCo-implantation on the Pre-amorphization Process." Journal of the Korean Physical Society 55, no. 1 (2009): 331–35. http://dx.doi.org/10.3938/jkps.55.331.

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31

Bae, Jong-Uk, Dong Kyun Sohn, Ji-Soo Park, Byung Hak Lee, Chang Hee Han, and Jin Won Park. "Effect of pre-amorphization of polycrystalline silicon on agglomeration of TiSi2 in subquarter micron Si lines." Journal of Applied Physics 86, no. 9 (1999): 4943–48. http://dx.doi.org/10.1063/1.371523.

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32

Kim, Seong-Dong, Cheol-Min Park, and Jason C. S. Woo. "Formation and control of box-shaped ultra-shallow junction using laser annealing and pre-amorphization implantation." Solid-State Electronics 49, no. 1 (2005): 131–35. http://dx.doi.org/10.1016/j.sse.2004.07.008.

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33

BIBIĆ, N., V. MILINOVIĆ, M. MILOSAVLJEVIĆ, F. SCHREMPEL, M. ŠILJEGOVIĆ, and K. P. LIEB. "Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers." Journal of Microscopy 232, no. 3 (2008): 539–41. http://dx.doi.org/10.1111/j.1365-2818.2008.02143.x.

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34

Cheng, Yuhong, Yihao Cheng, Shengcheng Zhou, Yelizhati Ruzha, and Yu Yang. "Closed-loop recycling of PET fabric and bottle waste by tandem pre-amorphization and enzymatic hydrolysis." Resources, Conservation and Recycling 208 (September 2024): 107706. http://dx.doi.org/10.1016/j.resconrec.2024.107706.

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35

Xu, Genbao, W. A. Chiou, M. Meshii, and P. R. Okamoto. "HREM study of amorphization of CuTi irradiated by 1 MeV electron." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (1990): 124–25. http://dx.doi.org/10.1017/s0424820100173753.

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Electron irradiation-induced amorphization of CuTi was studied by high resolution electron microscopy (HREM). Special attention was directed to correlate the spacial distribution of structural change from the perfect crystalline state to the complete amorphous state with the electron density distribution of the focussed beam which was used to amorphize the specimens.An alloy button of Cu-54 at % Ti was prepared by arc-melting and subsequently annealed at 1173K for three days. HREM samples were spark-cut and thinned by jet polishing. The samples were first examined in a Hitachi H 9000 HREM and

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36

Paul, Silke, and Wilfried Lerch. "Implant Annealing – An Evolution from Soak over Spike to Millisecond Annealing." Materials Science Forum 573-574 (March 2008): 207–28. http://dx.doi.org/10.4028/www.scientific.net/msf.573-574.207.

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This work presents a summary on the use of rapid thermal processing for implant annealing. It gives a short historical overview of rapid thermal processing systems and the first implant anneal processes on these newly developed tools. We then looked in detail on the soak anneal and spike anneal processes and the influence of certain process parameters. For the soak anneal influences of the ambient, either oxidizing or nitriding, were evaluated. The results of spike anneal processes are influenced by the pre-stabilization temperature, ramp-up and ramp-down rate, peak temperature, and gaseous am

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37

Titov, A. I., K. V. Karabeshkin, A. I. Struchkov, P. A. Karaseov, and A. Azarov. "Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms." Journal of Physics D: Applied Physics 55, no. 17 (2022): 175103. http://dx.doi.org/10.1088/1361-6463/ac4a38.

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Abstract Realization of radiation-hard electronic devices that are able to work in harsh environments requires deep understanding of the processes of defect formation/evolution occurring in semiconductors bombarded by energetic particles. In the present work we address such intriguing radiation phenomenon as high radiation tolerance of GaN and analyze structural disorder, employing advanced co-irradiation schemes where low and high energy implants with different ions have been used. Channeling analysis revealed that the interplay between radiation-stimulated defect annealing and defect stabili

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38

Zhang, Dan, Jing Xu, Jianfeng Gao, et al. "Impact of Ge pre-amorphization implantation on Co/Co-Ti/n+-Si contacts in advanced Co interconnects." Japanese Journal of Applied Physics 59, SL (2020): SLLB01. http://dx.doi.org/10.35848/1347-4065/ab922f.

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39

Ozcan, Ahmet S., Donald Wall, Jean Jordan-Sweet, and Christian Lavoie. "Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)." Applied Physics Letters 102, no. 17 (2013): 172107. http://dx.doi.org/10.1063/1.4801928.

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40

Ghanad Tavakoli, Shahram, Sungkweon Baek, and Hyunsang Hwang. "Effect of germanium pre-amorphization on solid-phase epitaxial regrowth of antimony and arsenic ion-implanted silicon." Materials Science and Engineering: B 114-115 (December 2004): 376–80. http://dx.doi.org/10.1016/j.mseb.2004.07.067.

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41

Sahoo, Deepak Ranjan, Izabela Szlufarska, Dane Morgan та Narasimhan Swaminathan. "Role of pre-existing point defects on primary damage production and amorphization in silicon carbide (β-SiC)". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 414 (січень 2018): 45–60. http://dx.doi.org/10.1016/j.nimb.2017.10.011.

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42

Yao, Huan, Changwei Wu, Tianzhou Ye, et al. "Atomistic Observation of Defect Generation and Microstructural Evolution in Polycrystalline FeCrAl Alloys Under Different Irradiation Conditions." Nanomaterials 15, no. 13 (2025): 988. https://doi.org/10.3390/nano15130988.

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FeCrAl alloys have garnered considerable attention as candidate cladding materials for light water reactors due to their promising mechanical stability and irradiation resistance. However, the response characteristics of these alloys to irradiation and the associated mechanisms remain poorly understood. This study provides atomistic insights into irradiation-induced defect formation and microstructural evolution in polycrystalline FeCrAl. Using the LAMMPS molecular dynamics code, displacement cascades were simulated under irradiation doses ranging from 0.05 dpa to 0.5 dpa while evaluating the

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43

Guillemin, S., P. Gergaud, N. Bernier, et al. "Influence of dual Ge/C pre-amorphization implantation on the Ni1−Pt Si phase nucleation and growth mechanisms." Microelectronic Engineering 244-246 (May 2021): 111571. http://dx.doi.org/10.1016/j.mee.2021.111571.

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44

Luo, Xue, Guilei Wang, Jing Xu, et al. "Impact of Ge pre-amorphization implantation on forming ultrathin TiGe x on both n- and p-Ge substrate." Japanese Journal of Applied Physics 57, no. 7S2 (2018): 07MA02. http://dx.doi.org/10.7567/jjap.57.07ma02.

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45

Ohuchi, Kazuya, Katsura Miyashita, Atsushi Murakoshi, Hisao Yoshimura, Kyoichi Suguro, and Yoshiaki Toyoshima. "Improved Ti Self-Aligned Silicide Technology Using High Dose Ge Pre-Amorphization for 0.10 µm CMOS and Beyond." Japanese Journal of Applied Physics 38, Part 1, No. 4B (1999): 2238–42. http://dx.doi.org/10.1143/jjap.38.2238.

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46

Qiuxia Xu, Xiaofong Duan, He Qian, et al. "Hole mobility enhancement of pMOSFETs with strain channel induced by Ge pre-amorphization implantation for source/drain extension." IEEE Electron Device Letters 27, no. 3 (2006): 179–81. http://dx.doi.org/10.1109/led.2006.870248.

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47

Chou, Chuan-Pu, Chin-Yu Chen, Kuen-Yi Chen, Shih-Chieh Teng, Jia-Hong Huang, and Yung-Hsien Wu. "Improved Current Drivability for Sub-20-nm N-FinFETs by Ge Pre-Amorphization in Contact With Reverse Retrograde Profile." IEEE Electron Device Letters 38, no. 3 (2017): 299–302. http://dx.doi.org/10.1109/led.2017.2647957.

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48

Ferdov, Stanislav. "Interzeolite Transformation from FAU-to-EDI Type of Zeolite." Molecules 29, no. 8 (2024): 1744. http://dx.doi.org/10.3390/molecules29081744.

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This study reports for the first time the transformation of the pre-made FAU type of zeolite to the EDI type of zeolite. The concentration of the KOH solution controls this interzeolite transformation, which unusually occurs at both room temperature and under hydrothermal conditions. The transformation involves the amorphization and partial dissolution of the parent FAU phase, followed by the crystallization of EDI zeolite. At room temperature, the transformation (11–35 days) provides access to well-shaped nano-sized crystals and hollow hierarchical particles while the hydrothermal synthesis r

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49

Chuang, Hung-Ming, Kong-Beng Thei, Sheng-Fu Tsai, et al. "Comparative study of double ion implant Ti salicide and pre-amorphization implant Co salicide for ultra-large-scale integration applications." Semiconductor Science and Technology 17, no. 10 (2002): 1075–80. http://dx.doi.org/10.1088/0268-1242/17/10/308.

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50

Chou, Chuan-Pu, Chin-Yu Chen, Kuen-Yi Chen, Shih-Chieh Teng, and Yung-Hsien Wu. "Improved leakage current and device uniformity for sub-20 nm N-FinFETs by cryogenic Ge pre-amorphization implant in contact." Microelectronic Engineering 178 (June 2017): 137–40. http://dx.doi.org/10.1016/j.mee.2017.05.031.

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