Relevant bibliographies by topics / Precision voltage reference

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Precision voltage reference'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Precision voltage reference"

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Tian, XingGuo, XiaoNing Xin, and DongYang Han. "A high precision bandgap voltage reference." MATEC Web of Conferences 232 (2018): 04072. http://dx.doi.org/10.1051/matecconf/201823204072.

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In order to meet the market demand for wide temperature range and high precision bandgap voltage reference, this paper designs a bandgap reference with wide temperature range and low temperature coefficient. In this paper, the basic implementation principle of the bandgap reference is analyzed.On the basis of the traditional bandgap reference circuit structure,this design adds a trimming network and a temperature compensation network. A new Gaussian bell curve compensation technique is adopted to compensate the low temperature section, and the normal temperature section and the high temperature section respectively. Compared with the existing compensation technology, the versatility and the compensation effect is better. The designed circuit is designed and manufactured based on the Huahong HHNECGE0.35um process. The results show that the output voltage is 2.5V at 2.7V supply voltage and temperature range of -40-125°C.at typical process angle ,the temperature coefficient is 0.54618 PPm/°C,and is within 1PPm/°C at other process angles.
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ZHU, ZHANGMING, WEI WEI, LIANXI LIU, and YINTANG YANG. "A HIGH PRECISION CMOS VOLTAGE REFERENCE WITHOUT RESISTORS." Journal of Circuits, Systems and Computers 21, no. 03 (May 2012): 1250019. http://dx.doi.org/10.1142/s0218126612500193.

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With the application of the voltage divider to the traditional bandgap reference without resistors, a high precision CMOS voltage reference without resistors has been proposed. The temperature coefficient has improved because the divider introduces the temperature compensation. The output reference voltage is 410.39 mV at the room temperature. The temperature coefficient of the voltage reference is 3.02 ppm/°C in the range from -20°C to 120°C. Moreover, the power supply rejection ratio of the voltage reference is -52.6 dB and the power consumption is 5.61 μW.
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Keat, ChongWei, Jeevan Kanesan, and Harikrishnan Ramiah. "Low-voltage, High-precision Bandgap Current Reference Circuit." IETE Journal of Research 58, no. 6 (2012): 501. http://dx.doi.org/10.4103/0377-2063.106760.

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Crovetti, P. S. "Very low thermal drift precision virtual voltage reference." Electronics Letters 51, no. 14 (July 2015): 1063–65. http://dx.doi.org/10.1049/el.2015.1209.

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Zhou, Qian Neng, Rong Xue, Hong Juan Li, Jin Zhao Lin, Yun Song Li, Yu Pang, Qi Li, Guo Quan Li, and Lu Deng. "A Sub-1V High Precision CMOS Bandgap Reference." Applied Mechanics and Materials 427-429 (September 2013): 1097–100. http://dx.doi.org/10.4028/www.scientific.net/amm.427-429.1097.

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In this paper, a low temperature coefficient bandgap voltage (BGR) is designed for A/D converter by adopting piecewise-linear compensation technique. The designed BGR is analyzed and simulated in SMIC 0.18μm CMOS process. Simulation results show that the PSRR of the designed BGR achieves-72.51dB, -72.49dB, and-70.58dB at 10Hz, 100Hz and 1kHz respectively. The designed BGR achieve the temperature coefficient of 1.57 ppm/°C when temperature is in the range from-35°C to 125°C. When power supply voltage VDD changes from 1V to 7V, the deviation of the designed BGR output voltage VREF is only 4.465μV.
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Zhou, Ze-Kun, Yue Shi, Yao Wang, Nie Li, Zhiping Xiao, Yunkun Wang, Xiaolin Liu, Zhuo Wang, and Bo Zhang. "A Resistorless High-Precision Compensated CMOS Bandgap Voltage Reference." IEEE Transactions on Circuits and Systems I: Regular Papers 66, no. 1 (January 2019): 428–37. http://dx.doi.org/10.1109/tcsi.2018.2857821.

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Varier, Vivek, and Nan Sun. "High-Precision ADC Testing With Relaxed Reference Voltage Stationarity." IEEE Transactions on Instrumentation and Measurement 70 (2021): 1–9. http://dx.doi.org/10.1109/tim.2020.3031208.

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Li, Lin An, Ming Tang, Wen Ou, and Yang Hong. "An All CMOS Current Reference." Applied Mechanics and Materials 135-136 (October 2011): 192–97. http://dx.doi.org/10.4028/www.scientific.net/amm.135-136.192.

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In this paper, an all CMOS current reference circuit which generates a reference current independent of PVT (Process, supply Voltage, and Temperature) variations is presented. The circuit consists of a self-biased current source (SBCS) and two nested connected transistors which supply a voltage with positive temperature coefficient and the resulting reference circuit has low temperature coefficient. It is based on CSMC 0.5um mixed-signal process with the supply voltage of 5V. The precision of reference current is about ±3.05% when considering the process, supply voltage and temperature variation at the same time.
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Bo Wang, Man Kay Law, and Amine Bermak. "A Precision CMOS Voltage Reference Exploiting Silicon Bandgap Narrowing Effect." IEEE Transactions on Electron Devices 62, no. 7 (July 2015): 2128–35. http://dx.doi.org/10.1109/ted.2015.2434495.

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Ming, Xin, Ying-qian Ma, Ze-kun Zhou, and Bo Zhang. "A High-Precision Compensated CMOS Bandgap Voltage Reference Without Resistors." IEEE Transactions on Circuits and Systems II: Express Briefs 57, no. 10 (October 2010): 767–71. http://dx.doi.org/10.1109/tcsii.2010.2067770.

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Dissertations / Theses on the topic "Precision voltage reference"

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Schwartz, George N. (George Nelson) 1973. "A novel precision voltage reference using a micromechanical resonator." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/46269.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.
Includes bibliographical references (p. 112-113).
This thesis describes the analysis and design of a precision voltage reference (PVR) based upon a micromechanical resonator. The precision voltage reference consists of two closed loop controllers and a nonlinear resonator. The oscillator loop maintains oscillations in the resonator. The phase locked loop is a frequency control loop that locks the resonator frequency to an external frequency. The micromechanical device consists of a pair of resonators that are electrostatically driven and sensed in their out-of-plane vibrational resonance mode. The oscillating proof masses move on flexure beams and the resonator is configured for use as a voltage controlled oscillator within the phase locked loop. The first order stiffness coefficient has an electrostatic component that reduces the frequency of oscillation with increasing bias voltage applied to the resonator. The resonator's frequency sensitivity to voltage is realized by the first order, bias voltage dependent stiffness coefficient. The input bias voltage to the voltage controlled oscillator is the precision voltage reference. A prototype PVR device was constructed and the PVR operation confirmed. Results between a first order design analysis, advanced modeling, and the prototype are in good agreement. The error model indicates the baseline design for the micromechanical PVR achieves a total voltage stability below 0.4 parts per million (ppm) with temperature control of 0.1°C.
by George N. Schwartz.
S.M.
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Cardoso, Adilson Silva. "Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications." Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/53099.

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State-of-the-art SiGe BiCMOS technologies leverage the maturity of deep-submicron silicon CMOS processing with bandgap-engineered SiGe HBTs in a single platform that is suitable for a wide variety of high performance and highly-integrated applications (e.g., system-on-chip (SOC), system-in-package (SiP)). Due to their bandgap-engineered base, SiGe HBTs are also naturally suited for cryogenic electronics and have the potential to replace the costly de facto technologies of choice (e.g., Gallium-Arsenide (GaAs) and Indium-Phosphide (InP)) in many cryogenic applications such as radio astronomy. This work investigates the response of mixed-signal circuits (both RF and analog circuits) when operating in extreme environments, in particular, at cryogenic temperatures and in radiation-rich environments. The ultimate goal of this work is to attempt to fill the existing gap in knowledge on the cryogenic and radiation response (both single event transients (SETs) and total ionization dose (TID)) of specific RF and analog circuit blocks (i.e., RF switches and voltage references). The design approach for different RF switch topologies and voltage references circuits are presented. Standalone Field Effect Transistors (FET) and SiGe HBTs test structures were also characterized and the results are provided to aid in the analysis and understanding of the underlying mechanisms that impact the circuits' response. Radiation mitigation strategies to counterbalance the damaging effects are investigated. A comprehensive study on the impact of cryogenic temperatures on the RF linearity of SiGe HBTs fabricated in a new 4th-generation, 90 nm SiGe BiCMOS technology is also presented.
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Srinivasan, Venkatesh. "Programmable Analog Techniques For Precision Analog Circuits, Low-Power Signal Processing and On-Chip Learning." Diss., Georgia Institute of Technology, 2006. http://hdl.handle.net/1853/11588.

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In this work, programmable analog techniques using floating-gate transistors have been developed to design precision analog circuits, low-power signal processing primitives and adaptive systems that learn on-chip. Traditional analog implementations lack programmability with the result that issues such as mismatch are corrected at the expense of area. Techniques have been proposed that use floating-gate transistors as an integral part of the circuit of interest to provide both programmability and the ability to correct for mismatch. Traditionally, signal processing has been performed in the digital domain with analog circuits handling the interface with the outside world. Such a partitioning of responsibilities is inefficient as signal processing involves repeated multiplication and addition operations that are both very power efficient in the analog domain. Using programmable analog techniques, fundamental signal processing primitives such as multipliers have been developed in a low-power fashion while preserving accuracy. This results in a paradigm shift in signal processing. A co-operative analog/digital signal processing framework is now possible such that the partitioning of tasks between the analog and digital domains is performed in a power efficient manner. Complex signal processing tasks such as adaptive filtering that learn the weight coefficients are implemented by exploiting the non-linearities inherent with floating-gate programming. The resulting floating-gate synapses are compact, low-power and offer the benefits of non-volatile weight storage. In summary, this research involves developing techniques for improving analog circuit performance and in developing power-efficient techniques for signal processing and on-chip learning.
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Books on the topic "Precision voltage reference"

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Rincón-Mora, Gabriel A. Voltage references: From diodes to precision high-order bandgap circuits. Piscataway, NJ: IEEE Press, 2002.

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Rincon-Mora, Gabriel Alfonso. Voltage References: From Diodes to Precision High-Order Bandgap Circuits. Wiley-IEEE Press, 2001.

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Book chapters on the topic "Precision voltage reference"

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Yuan, Fei. "Low-Power Precision Voltage References." In CMOS Circuits for Passive Wireless Microsystems, 117–72. New York, NY: Springer New York, 2010. http://dx.doi.org/10.1007/978-1-4419-7680-2_5.

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"Designing Precision Reference Circuits." In Voltage References. IEEE, 2009. http://dx.doi.org/10.1109/9780470547038.ch4.

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Harrison, Linden T. "Using Precision Matched-Pairs, Duals, and Quads." In Current Sources and Voltage References, 125–35. Elsevier, 2005. http://dx.doi.org/10.1016/b978-075067752-3/50030-7.

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Harrison, Linden T. "Creating Precision Current Sources with Op Amps and Voltage References." In Current Sources and Voltage References, 281–317. Elsevier, 2005. http://dx.doi.org/10.1016/b978-075067752-3/50036-8.

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Hota, Surabhi. "Synchrotron Based Techniques in Soil Analysis: A Modern Approach." In Technology in Agriculture [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.99176.

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Soil is a highly heterogenous system where a number of physical, chemical and biological processes are taking place. The study of these processes requires analytical techniques. The electromagnetic radiations in the form spectroscopy, X-Ray diffraction, magnetic resonance etc. have been used in the field of soil analysis since decades. The study of soil nutrients, mineralogy, organic matter and complex compounds in soils use these techniques and are successful tools till date. But these come with a limitation of lesser spatial and spectral resolution, time consuming sample preparation and destructive methods of study which are mostly ex-situ. In contrast to the conventional spectroscopic techniques, the synchrotron facility is of high precision and enables non-destructive study of the samples to a nano scale. The technique uses the high intensity synchrotron radiation which is produced in a special facility, where the electrons are ejected using very high voltage and accelerated in changing magnetic field, at a speed of light resulting in a very bright radiation that enables a very précised study of the subject. For example, in studying the dynamics of P and N in soils, SR aided XAS are used to study the K-edge spectra of these nutrients, without any matrix interference, which used to be a problem in conventional SEM, IR or NMR spectroscopy. These radiations provide high energy in GeV, which imparts high sensitivity and nanoscale detection. Basically, the SR facility improves the precision of the existing spectroscopic techniques. This chapter discusses how the Synchrotron radiations aid to improve precision in various field of soil analysis such as, carbon chemistry, nutrient dynamics, heavy metal and contaminant speciation and rhizosphere study. However, the technique also come with major limitations of requirement of very high skill for preparation of samples, inadequate availability of references for studies related to absorption spectrum and control of radiation damage. Applications and limitations of the technique thoroughly reviewed in this chapter with an aim to provide a brief idea of this new dimension of soil analysis.
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Conference papers on the topic "Precision voltage reference"

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Katkov, A., V. Lovtsus, and R. Behr. "Portable Josephson voltage reference standard." In 2016 Conference on Precision Electromagnetic Measurements (CPEM 2016). IEEE, 2016. http://dx.doi.org/10.1109/cpem.2016.7540664.

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Karkkainen, A., S. Awan, A. Oja, J. Kyynarainen, A. Manninen, N. Tisnek, and H. Seppa. "A DC Voltage Reference Based on MEMS." In 2004 Conference on Precision Electromagnetic Measurements. IEEE, 2004. http://dx.doi.org/10.1109/cpem.2004.305515.

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Kunming Cai, Jili Tao, and Qixin He. "Design of high precision CMOS voltage reference." In 2010 Second Pacific-Asia Conference on Circuits,Communications and System (PACCS). IEEE, 2010. http://dx.doi.org/10.1109/paccs.2010.5626970.

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Cui, LinHai. "Design of a high precision bandgap voltage reference." In Mechanical Engineering and Information Technology (EMEIT). IEEE, 2011. http://dx.doi.org/10.1109/emeit.2011.6023473.

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Xinpeng Xing, Zhihua Wang, and Dongmei Li. "A low voltage high precision CMOS bandgap reference." In 2007 Norchip Conference. IEEE, 2007. http://dx.doi.org/10.1109/norchp.2007.4481079.

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Karkkainen, A., N. Pesonen, M. Suhonen, J. Kyynarainen, A. Oja, A. Manninen, N. Tisnek, and H. Seppa. "AC Voltage Reference Based on a Capacitive Micromechanical Component." In 2004 Conference on Precision Electromagnetic Measurements. IEEE, 2004. http://dx.doi.org/10.1109/cpem.2004.305489.

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Kurten Ihlenfeld, W. G., and R. P. Landim. "Highly accurate differential AC voltage measurements with a single DC voltage reference." In 2014 Conference on Precision Electromagnetic Measurements (CPEM 2014). IEEE, 2014. http://dx.doi.org/10.1109/cpem.2014.6898611.

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So, Eddy, and David Bennett. "A current-comparator-based high-voltage reference inductor." In 2014 Conference on Precision Electromagnetic Measurements (CPEM 2014). IEEE, 2014. http://dx.doi.org/10.1109/cpem.2014.6898229.

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Keyong, Hu, Wang Yuhuai, Zhang Huixi, and Wu Meifei. "The design of high-precision BiCOMS bandgap voltage reference." In 2011 International Conference on Electronics, Communications and Control (ICECC). IEEE, 2011. http://dx.doi.org/10.1109/icecc.2011.6067841.

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Ebenezer, Pallavi, Tyler Archer, Degang Chen, and Randall Geiger. "A Precision Bandgap Voltage Reference Using Curvature Elimination Technique." In 2019 IEEE 62nd International Midwest Symposium on Circuits and Systems (MWSCAS). IEEE, 2019. http://dx.doi.org/10.1109/mwscas.2019.8884873.

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