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Journal articles on the topic 'Precision voltage reference'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Tian, XingGuo, XiaoNing Xin, and DongYang Han. "A high precision bandgap voltage reference." MATEC Web of Conferences 232 (2018): 04072. http://dx.doi.org/10.1051/matecconf/201823204072.

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In order to meet the market demand for wide temperature range and high precision bandgap voltage reference, this paper designs a bandgap reference with wide temperature range and low temperature coefficient. In this paper, the basic implementation principle of the bandgap reference is analyzed.On the basis of the traditional bandgap reference circuit structure,this design adds a trimming network and a temperature compensation network. A new Gaussian bell curve compensation technique is adopted to compensate the low temperature section, and the normal temperature section and the high temperature section respectively. Compared with the existing compensation technology, the versatility and the compensation effect is better. The designed circuit is designed and manufactured based on the Huahong HHNECGE0.35um process. The results show that the output voltage is 2.5V at 2.7V supply voltage and temperature range of -40-125°C.at typical process angle ,the temperature coefficient is 0.54618 PPm/°C,and is within 1PPm/°C at other process angles.

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2

ZHU, ZHANGMING, WEI WEI, LIANXI LIU, and YINTANG YANG. "A HIGH PRECISION CMOS VOLTAGE REFERENCE WITHOUT RESISTORS." Journal of Circuits, Systems and Computers 21, no. 03 (May 2012): 1250019. http://dx.doi.org/10.1142/s0218126612500193.

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With the application of the voltage divider to the traditional bandgap reference without resistors, a high precision CMOS voltage reference without resistors has been proposed. The temperature coefficient has improved because the divider introduces the temperature compensation. The output reference voltage is 410.39 mV at the room temperature. The temperature coefficient of the voltage reference is 3.02 ppm/°C in the range from -20°C to 120°C. Moreover, the power supply rejection ratio of the voltage reference is -52.6 dB and the power consumption is 5.61 μW.

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3

Keat, ChongWei, Jeevan Kanesan, and Harikrishnan Ramiah. "Low-voltage, High-precision Bandgap Current Reference Circuit." IETE Journal of Research 58, no. 6 (2012): 501. http://dx.doi.org/10.4103/0377-2063.106760.

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4

Crovetti, P. S. "Very low thermal drift precision virtual voltage reference." Electronics Letters 51, no. 14 (July 2015): 1063–65. http://dx.doi.org/10.1049/el.2015.1209.

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5

Zhou, Qian Neng, Rong Xue, Hong Juan Li, Jin Zhao Lin, Yun Song Li, Yu Pang, Qi Li, Guo Quan Li, and Lu Deng. "A Sub-1V High Precision CMOS Bandgap Reference." Applied Mechanics and Materials 427-429 (September 2013): 1097–100. http://dx.doi.org/10.4028/www.scientific.net/amm.427-429.1097.

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In this paper, a low temperature coefficient bandgap voltage (BGR) is designed for A/D converter by adopting piecewise-linear compensation technique. The designed BGR is analyzed and simulated in SMIC 0.18μm CMOS process. Simulation results show that the PSRR of the designed BGR achieves-72.51dB, -72.49dB, and-70.58dB at 10Hz, 100Hz and 1kHz respectively. The designed BGR achieve the temperature coefficient of 1.57 ppm/°C when temperature is in the range from-35°C to 125°C. When power supply voltage VDD changes from 1V to 7V, the deviation of the designed BGR output voltage VREF is only 4.465μV.

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6

Zhou, Ze-Kun, Yue Shi, Yao Wang, Nie Li, Zhiping Xiao, Yunkun Wang, Xiaolin Liu, Zhuo Wang, and Bo Zhang. "A Resistorless High-Precision Compensated CMOS Bandgap Voltage Reference." IEEE Transactions on Circuits and Systems I: Regular Papers 66, no. 1 (January 2019): 428–37. http://dx.doi.org/10.1109/tcsi.2018.2857821.

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7

Varier, Vivek, and Nan Sun. "High-Precision ADC Testing With Relaxed Reference Voltage Stationarity." IEEE Transactions on Instrumentation and Measurement 70 (2021): 1–9. http://dx.doi.org/10.1109/tim.2020.3031208.

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8

Li, Lin An, Ming Tang, Wen Ou, and Yang Hong. "An All CMOS Current Reference." Applied Mechanics and Materials 135-136 (October 2011): 192–97. http://dx.doi.org/10.4028/www.scientific.net/amm.135-136.192.

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In this paper, an all CMOS current reference circuit which generates a reference current independent of PVT (Process, supply Voltage, and Temperature) variations is presented. The circuit consists of a self-biased current source (SBCS) and two nested connected transistors which supply a voltage with positive temperature coefficient and the resulting reference circuit has low temperature coefficient. It is based on CSMC 0.5um mixed-signal process with the supply voltage of 5V. The precision of reference current is about ±3.05% when considering the process, supply voltage and temperature variation at the same time.

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9

Bo Wang, Man Kay Law, and Amine Bermak. "A Precision CMOS Voltage Reference Exploiting Silicon Bandgap Narrowing Effect." IEEE Transactions on Electron Devices 62, no. 7 (July 2015): 2128–35. http://dx.doi.org/10.1109/ted.2015.2434495.

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10

Ming, Xin, Ying-qian Ma, Ze-kun Zhou, and Bo Zhang. "A High-Precision Compensated CMOS Bandgap Voltage Reference Without Resistors." IEEE Transactions on Circuits and Systems II: Express Briefs 57, no. 10 (October 2010): 767–71. http://dx.doi.org/10.1109/tcsii.2010.2067770.

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11

Liao, Jun, Yiqiang Zhao, and Junfeng Geng. "A sub-1 V high-precision CMOS bandgap voltage reference." Journal of Semiconductors 33, no. 2 (February 2012): 025014. http://dx.doi.org/10.1088/1674-4926/33/2/025014.

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12

Ghanavati Nejad, Tayebeh, Ebrahim Farshidi, Henrik Sjöland, and Abdolnabi Kosarian. "A high precision logarithmic-curvature compensated all CMOS voltage reference." Analog Integrated Circuits and Signal Processing 99, no. 2 (August 18, 2018): 383–92. http://dx.doi.org/10.1007/s10470-018-1296-0.

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13

Niemeyer, J., L. Grimm, W. Meier, J. H. Hinken, and E. Vollmer. "Stable Josephson reference voltages between 0.1 and 1.3 V for high‐precision voltage standards." Applied Physics Letters 47, no. 11 (December 1985): 1222–23. http://dx.doi.org/10.1063/1.96335.

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14

Petkovsek, Marko, and Peter Zajec. "Evaluating Common-Mode Voltage Based Trade-Offs in Differential-Ended and Single-Supplied Signal Conditioning Amplifiers." Electronics 10, no. 16 (August 17, 2021): 1982. http://dx.doi.org/10.3390/electronics10161982.

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This paper focuses on a differential voltage measurement in low-voltage automotive devices whose subunits are separated with a low-side safety switch. In contrast to conventional applications with high-side switches, a common-mode voltage (CMV) with negative polarity exists at the input of the signal conditioning circuitry. To overcome the shortage of dedicated integrated circuits capable of withstanding negative CMV, the paper investigates single- and two-stage differential circuits with single-supplied operational amplifiers to find a cost-optimized counterpart. In addition, the proposed procedure tunes the circuit parameters in such a manner to obtain the largest possible full-scale range at the output. Though, such optimization results in very uncommon values for gain and reference voltages. This issue is additionally evaluated for reference voltages that are either cost-effective or more easily accessible to increase the circuit feasibility. Since the impact of resistances on circuits’ behaviour could be diminished to a great extent using high-precision and matched pair resistors, the sensitivity analysis was investigated only for a reference voltage change. Furthermore, a reversed termination of measured voltages results in a simplified reference voltage selection without hindering circuits’ performance, proven by simulation and experimental results.

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15

Duan, Ning, Shulin Liu, Xiangdong Zhu, Jinjun Pei, and Haipeng Zhu. "A High-precision Current Sense Circuit with Trimming for DC-DC Converts." MATEC Web of Conferences 232 (2018): 04057. http://dx.doi.org/10.1051/matecconf/201823204057.

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A high-precision current sense circuit with trimming is proposed to realize the over-current protection of the power management chip and improve its conversion efficiency. Based on solving the problem of voltage offset and current inrush caused by process deviation, this circuit can detect the value of the inductor current accurately. By designing the bandgap reference circuit and the reference voltage bias network, the required stable reference voltage and bias current can be obtained. The trimming bit selection circuit can realize the trimming function. This circuit is designed with TSMC 180nm 1P3M GEN2 process, and all circuits are verified by Cadence Spectre.

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16

Zhou, Ze-kun, Hongming Yu, Yue Shi, Zhuo Wang, and Bo Zhang. "A High-Precision Bandgap Voltage Reference with Automatic Curvature-Compensation Technique." Journal of Circuits, Systems and Computers 28, no. 13 (January 8, 2019): 1950214. http://dx.doi.org/10.1142/s0218126619502141.

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A high-precision bandgap voltage reference (BGR) with a novel curvature-compensation scheme is proposed in this paper. The temperature coefficient (TC) can be automatically optimized with a built-in adaptive curvature-compensation technique, which is realized in a digitization control way. An exponential curvature-compensation method is first adopted to reduce the TC in a certain degree, especially in low temperature range. Then, the temperature drift of BGR in higher temperature range can be further minimized by dynamic zero-temperature-coefficient point tracking (ZTCPT) with temperature changes. With the help of proposed adaptive signal processing, the output voltage of BGR can approximately maintain zero TC in a wider temperature range. Verification results of the BGR proposed in this paper, which is implemented in 0.35-[Formula: see text]m BiCMOS process, illustrate that the TC of 1.4[Formula: see text]ppm/∘C is realized under the power supply voltage of 3[Formula: see text]V and the power supply rejection of the proposed circuit is [Formula: see text][Formula: see text]dB without any filter capacitor.

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17

Lv, Caifeng, Xiujie Huang, and Shancheng Zhao. "A Nonuniform Reference Voltage Optimization Based on Relative-Precision-Loss Ratios in MLC NAND Flash Memory." Computer and Information Science 14, no. 2 (April 13, 2021): 75. http://dx.doi.org/10.5539/cis.v14n2p75.

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In Multi-Level-Cell (MLC) NAND flash memory, cell-to-cell interference (CCI) and retention time have become the main noise that degrades the data storage reliability. To mitigate such noise, a relative precision loss (RPL) nonuniform reference voltage sensing strategy is proposed in this paper. First, based on the NAND flash channel model with CCI and retention noise, we simulate the data storage process of MLC NAND flash by Monte Carlo method, and find that the threshold-voltage of each disturbed storage state shows approximately to be Gaussian distributed. Then, by Gaussian approximation, the distribution of threshold voltage can be estimated easily in mathematics with a little loss. Second, we introduce a concept of log-likelihood ratio (LLR)-based RPL ratio to determine the dominating overlap regions, and then propose a new nonuniform reference voltage sensing strategy. This strategy does not only reduce the memory sensing precision (i.e., the number of reference voltages), but also maintains the reliability of the soft information of NAND flash memory channel output for soft decoding. Third, we implement extensive simulations to verify the performance of the new nonuniform sensing strategy. The BER performances of LDPC codes for different sensing strategies are provided to show that the proposed LLR-based RPL-nonuniform sensing strategy can make a good compromise between memory sensing latency and error-correction performance.

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18

Li, Qiang, Xiao Yun Tan, and Guan Shi Wang. "A High-Order Curvature-Compensated Bandgap Voltage Reference for Micro-Gyroscope." Key Engineering Materials 503 (February 2012): 12–17. http://dx.doi.org/10.4028/www.scientific.net/kem.503.12.

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The reference is an important part of the micro-gyroscope system. The precision and stability of the reference directly affect the precision of the micro-gyroscope. Unlike the traditional bandgap reference circuit, a circuit using a temperature-dependent resistor ratio generated by a highly-resistive poly resistor and a diffusion resistor in CMOS technology is proposed in this paper. The complexity of the circuit is greatly reduced. Implemented with the standard 0.5μm CMOS technology and 9V power supply voltage, in the range of -40~120°C, the temperature coefficient of the proposed bandgap voltage reference can achieve to about 1.6 ppm/°C. The PSRR of the circuit is -107dB.

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19

Dusé, Yoann, Fabien Laplace, Nicolas Joubert, Xavier Montmayeur, Noureddine Zitouni, Sebastien Vieusses, Gregory Thepaut, Arnaud Anota, and Gonzalo Picun. "Robust True LDO Linear Voltage Regulator and Digitally Trimmable Buffered Precision Voltage Reference for High-Temperature, Low-Voltage Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (January 1, 2013): 000096–103. http://dx.doi.org/10.4071/hiten-mp17.

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We present in this paper two new products for high-temperature, low-voltage (2.8V to 5.5V) power management applications. The first product is an original implementation of a monolithic low dropout regulator (XTR70010), able to deliver up to 1A at 230°C with less than 1V of dropout. This new voltage regulator can source an output current level up to 1.5A. The regulated output voltage can be selected among 32 preset values from 0.5V to 3.6V in steps of 100mV, or it can be obtained with a pair of external resistors. The circuit integrates complex analog and digital control blocks providing state of the art features such as UVLO protection, chip enable control, soft start-up and soft shut-down, hiccup short-circuit protection, customer selectable thermal shut-down, input power supply protection, output overshoot remover and stability over an extremely wide range of load capacitances. The circuit offers a fair ±2% absolute accuracy and is guaranteed latch-up free. The second product is an advanced high-temperature, low-power, digitally trimmable voltage reference (XTR75020). Thanks to a custom, 1-wire serial interface, the absolute precision and the temperature coefficient can be adjusted in order to obtain an accuracy better than 0.5% with a temperature coefficient bellow ±20ppm/°C. On-chip OTP memory for trimming of absolute value and temperature coefficient makes the circuit extremely accurate and almost insensitive to drifts over time and temperature. The circuit features a class AB output buffer able to source or sink up to 5mA and remains stable with any load capacitance up to 50μF. The XTR75020 has nine preset possible output voltages. The source and sink short circuit current always remains bellow 25mA. The quiescent current consumption is 300μA typical at 230°C while the standby current is, in all cases, under 20μA. Both devices are designed on a latch-up free silicon-on-insulator process.

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20

Yu, Guo-yi, and Xue-cheng Zou. "A novel low-voltage high precision current reference based on subthreshold MOSFETs." Journal of Zhejiang University-SCIENCE A 8, no. 1 (January 2007): 50–55. http://dx.doi.org/10.1631/jzus.2007.a0050.

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21

Huang, Yi, and Laleh Najafizadeh. "A Precision SiGe Reference Circuit Utilizing Si and SiGe Bandgap Voltage Differences." IEEE Transactions on Electron Devices 64, no. 2 (February 2017): 392–99. http://dx.doi.org/10.1109/ted.2016.2642101.

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22

Ahuja, B. K., Hoa Vu, C. A. Laber, and W. H. Owen. "A very high precision 500-nA CMOS floating-gate analog voltage reference." IEEE Journal of Solid-State Circuits 40, no. 12 (December 2005): 2364–72. http://dx.doi.org/10.1109/jssc.2005.856268.

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23

Dehghani, R., and S. M. Atarodi. "A new low voltage precision CMOS current reference with no external components." IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing 50, no. 12 (December 2003): 928–32. http://dx.doi.org/10.1109/tcsii.2003.820239.

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24

Tiancheng, Zhu, Yao Suying, and Li Binqiao. "A high precision programmable bandgap voltage reference design for high resolution ADC." Journal of Semiconductors 30, no. 7 (July 2009): 075005. http://dx.doi.org/10.1088/1674-4926/30/7/075005.

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25

CHEN, JUN-DA, and CHENG-KAI YE. "DESIGN OF A CMOS BANDGAP REFERENCE CIRCUIT WITH A WIDE TEMPERATURE RANGE, HIGH PRECISION AND LOW TEMPERATURE COEFFICIENT." Journal of Circuits, Systems and Computers 23, no. 08 (June 18, 2014): 1450107. http://dx.doi.org/10.1142/s0218126614501072.

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This paper presents an approach to the design of a high-precision CMOS voltage reference. The proposed circuit is designed for TSMC 0.35 μm standard CMOS process. We design the first-order temperature compensation bandgap voltage reference circuit. The proposed post-simulated circuit delivers an output voltage of 0.596 V and achieves the reported temperature coefficient (TC) of 3.96 ppm/°C within the temperature range from -60°C to 130°C when the supply voltage is 1.8 V. When simulated in a smaller temperature range from -40°C to 80°C, the circuit achieves the lowest reported TC of 2.09 ppm/°C. The reference current is 16.586 μA. This circuit provides good performances in a wide range of temperature with very small TC.

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26

Yin, Yongsheng, Xinbo Yang, and Honghui Deng. "A differential reference voltage source used in high-speed high-precision pipelined ADC." JOURNAL OF ELECTRONIC MEASUREMENT AND INSTRUMENT 26, no. 12 (February 8, 2013): 1043–49. http://dx.doi.org/10.3724/sp.j.1187.2012.01043.

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27

Pearn, W. L., M. H. Shu, and B. M. Hsu. "C pm MPPAC for manufacturing quality control applied to precision voltage reference process." International Journal of Advanced Manufacturing Technology 23, no. 9-10 (May 1, 2004): 712–19. http://dx.doi.org/10.1007/s00170-003-1688-9.

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28

Latenko, V. I., I. A. Ornatsky, S. O. Fil, and Ie O. Zaitsev. "DIGITAL CONVERTERS METROLOGICAL SPECIFICATION FOR RESISTANT THERMAL THERMOSENSORS COMPARE." Tekhnichna Elektrodynamika 2021, no. 1 (January 14, 2021): 84–89. http://dx.doi.org/10.15407/techned2021.01.084.

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In this paper presents comparative metrological analysis of two options for connecting Pt100 resistive temperature sensors to high-precision analog-to-digital converters is carried out: a proportional circuit in which the reference resistor serves to form the reference voltage, and a canonical 4-wire circuit where the resistance of the reference resistor is measured in the same way as the resistance of the temperature sensor are presented. It is shown that the error of the one-stroke proportional circuit is determined by the long-term instability of the gain, while the resulting error of the push-pull canonical circuit is determined by the short-term instability of several elements. The insignificant advantage of the canonical circuit with the accuracy of conversion and in the absence of additional requirements for the input of the reference voltage is affirmed, which gives recommendations for the practical application of the circuits considered in meters of temperature. References 10, figures 2, table 1.

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29

Selvam, K. C., and S. Latha. "A Simple Square Rooting Circuit Based on Operational Amplifiers (OPAMPs)." Engineering, Technology & Applied Science Research 3, no. 1 (February 11, 2013): 349–51. http://dx.doi.org/10.48084/etasr.234.

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A simple circuit which accepts a negative voltage as input and provides an output voltage equal to the square root of the input voltage is described in this paper. The square rooting operation is dependent only on the ratio of two resistors and a DC voltage. Hence, the required accuracy can be obtained by employing precision resistors and a stable reference voltage. The feasibility of the circuit is examined by testing the results on a proto type.

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30

Pearn, W. L., M. H. Shu, and B. M. Hsu. "C pm MPPAC for manufacturing quality control applied to the precision voltage reference process." International Journal of Advanced Manufacturing Technology -1, no. 1 (June 11, 2003): 1. http://dx.doi.org/10.1007/s00170-003-1758-z.

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31

Li, Xiang, Rui Li, Chunge Ju, Bo Hou, Qi Wei, Bin Zhou, Zhiyong Chen, and Rong Zhang. "A Regulated Temperature-Insensitive High-Voltage Charge Pump in Standard CMOS Process for Micromachined Gyroscopes." Sensors 19, no. 19 (September 25, 2019): 4149. http://dx.doi.org/10.3390/s19194149.

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Micromachined gyroscopes require high voltage (HV) for actuation and detection to improve its precision, but the deviation of the HV caused by temperature fluctuations will degrade the sensor’s performance. In this paper, a high-voltage temperature-insensitive charge pump is proposed. Without adopting BCD (bipolar-CMOS-DMOS) technology, the output voltage can be boosted over the breakdown voltage of n-well/substrate diode using triple-well NMOS (n-type metal-oxide-semiconductor) transistors. By controlling the pumping clock’s amplitude continuously, closed-loop regulation is realized to reduce the output voltage’s sensitivity to temperature changes. Besides, the output level is programmable linearly in a large range by changing the reference voltage. The whole circuit has been fabricated in a 0.18- μ m standard CMOS (complementary metal-oxide-semiconductor) process with a total area of 2.53 mm 2 . Measurements indicate that its output voltage has a linear adjustable range from around 13 V to 16.95 V, and temperature tests show that the maximum variations of the output voltage at − 40 ∼ 80 ∘ C are less than 1.1%.

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32

Liu, Xiao Wei, Bing Jun Lv, Peng Fei Wang, Liang Yin, and Na Xu. "A Curvature-Compensated, High Power Supply Rejection CMOS Bandgap Reference for MEMS Micro-Accelerometer." Key Engineering Materials 483 (June 2011): 481–86. http://dx.doi.org/10.4028/www.scientific.net/kem.483.481.

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The reference is an important part in the accelerometer system. With the development of science and technology, the request of the performance of accelerometers is increasingly higher and the precision of reference directly affects the performance of accelerometers. Therefore, a reference voltage applicable to accelerometers is presented based on the analysis of basic principles of conventional bandgap reference (BGR) in this paper. A high-order curvature compensation technique, which uses a temperature dependent resistor ratio generated by a high poly resistor and a nwell resistor, effectively serves to reduce temperature coefficient of proposed reference voltage circuit and to a large extent improve its performance. To achieve a high power supply rejection ratio (PSRR) over a broad frequency range, a pre-regulator is introduced to remain the supply voltage of the core circuit of BGR relatively independent of the global supply voltage. The proposed circuitry is designed in standard 2.0μm CMOS process. The simulated result shows that the average temperature coefficient is less than 2ppm/°C in the temperature range from -40 to 120°C. The improvement on temperature coefficient (TC) is about 10 times reduction compared to the conventional approach. And the PSR at DC frequency and 1kHz achieves -107 and -71dB respectively at 9.0V supply voltage.

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33

Shu, M. H. "Manufacturing capability information for multiple product quality characteristics: a case study to precision voltage reference." Journal of Information and Optimization Sciences 25, no. 2 (May 2004): 403–20. http://dx.doi.org/10.1080/02522667.2004.10699616.

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34

Ming, Xin, Li Hu, Yang-Li Xin, Xuan Zhang, Di Gao, and Bo Zhang. "A High-Precision Resistor-Less CMOS Compensated Bandgap Reference Based on Successive Voltage-Step Compensation." IEEE Transactions on Circuits and Systems I: Regular Papers 65, no. 12 (December 2018): 4086–96. http://dx.doi.org/10.1109/tcsi.2018.2834468.

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35

Urekar, Marjan, Djordje Novakovic, and Nemanja Gazivoda. "Composite milliohm-meter for resistance measurement of precision current shunts in industrial environment." Facta universitatis - series: Electronics and Energetics 32, no. 1 (2019): 75–89. http://dx.doi.org/10.2298/fuee1901075u.

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A composite milliohm-meter (Com-mOhm), based on standard four-wire Kelvin resistance measurement method, was developed for measurements of precision current shunts used in an industrial environment. The system is comprised of a precision, temperature compensated, low drift, high stability 100 mA current source and a 4 ? digit commercial multimeter. Due to the set of specific demands and conditions concerning the industrial applications of precision current shunts, standard measurement equipment and methods could not be implemented. The composite resistor standard was used for temperature stabilization of the precision current source based on precision voltage reference REF102. The measurement precision of ?0.1 milliohms is observed during measurement of 20 milliohm current shunts.

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36

Li, Zhen-hua, and Shuang Zhao. "High accuracy optical voltage transformer with digital output based on coaxial capacitor voltage divider." Transactions of the Institute of Measurement and Control 40, no. 13 (October 25, 2017): 3824–33. http://dx.doi.org/10.1177/0142331217732828.

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The voltage transformer based on capacitor divider is susceptible to stray capacitance and Bi4Ge3O12 crystal is sensitive to temperature, which leads to the decrease of measurement precision. To solve these questions, a kind of temperature self-healing optical voltage transformer based on the coaxial capacitor is proposed in this paper. By using coaxial capacitor divider structure instead of the traditional capacitor divider structure, and using a reference light path to achieve the function of temperature self-healing, the measurement accuracy of the optical voltage transformer can be improved. The theoretical analysis, modeling and simulation of several key technologies of coaxial capacitance are presented. Simulation and experimental results show that the temperature self-healing optical voltage transformer based on coaxial capacitor structure meets the requirements of the 0.2 class accuracies.

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37

Zhao, Jian Peng, Rong Wei, and Qian Kun Chang. "Model Reference Adaption Identification Control Research Based on the Asynchronous Motor Vector Control System Model." Applied Mechanics and Materials 303-306 (February 2013): 1175–79. http://dx.doi.org/10.4028/www.scientific.net/amm.303-306.1175.

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Using the easily measured stator current and voltage information of asynchronous motor to get Motor speed by the Model reference adaptive algorithm. MRAS simulation model is builded with the PSIM, thus for system control. Through simulation and experiment in the different frequency and speed condition, contrasted the given speed, actual speed, estimation speed, it shows that the method has good speed identification precision and dynamic performance.

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38

Gevorgyan, Vazgen S. "DRIVER OUTPUT IMPEDANCE CALIBRATION SYSTEM WITH COMPARATOR UNIT OFFSET CANCELLATION." Proceedings of the YSU A: Physical and Mathematical Sciences 55, no. 1 (254) (May 21, 2021): 81–89. http://dx.doi.org/10.46991/pysu:a/2021.55.1.81.

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In modern integrated circuits, the channel length of the transistors is reduced, and the supply voltages are also reduced. But the threshold voltages of the transistors cannot be reduced so quickly due to the physical properties of the materials used, which decreases the operating range of the transistors and makes noises comparable to them. Therefore, it is necessary to eliminate the influence of noise sources in the circuits, in particular, reflections between the transmission line and the output of the transmitter. A system is proposed for calibrating the output impedance of the transmitter based on an accurate external resistor with comparator unit offset voltage compensation. Existing analog and reference frequency based solutions have key disadvantages such as the inability to compensate the offset voltage after the integrated circuit is fabricated, and the distribution of the calibration voltage across the Input/Output device and constant power consumption during the operation. The proposed circuit includes a high-precision digital-to-analog converter to compensate the comparator offset voltage. It generates calibration codes for the pull-up and pull-down parts of the transmitter output buffer, and provides fine tuning of the output impedance. The circuit was modeled using 16 nm FinFET process elements and simulated with HSPICE simulator.

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Walther, Thomas. "Measurement of Nanometre-Scale Gate Oxide Thicknesses by Energy-Dispersive X-ray Spectroscopy in a Scanning Electron Microscope Combined with Monte Carlo Simulations." Nanomaterials 11, no. 8 (August 20, 2021): 2117. http://dx.doi.org/10.3390/nano11082117.

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A procedure based on energy-dispersive X-ray spectroscopy in a scanning electron microscope (SEM-EDXS) is proposed to measure ultra-thin oxide layer thicknesses to atomic scale precision in top-down instead of cross-sectional geometry. The approach is based on modelling the variation of the electron beam penetration depth and hence the depth of X-ray generation in the sample as a function of the acceleration voltage. This has been tested for the simple case of silica on silicon (SiO2/Si) which can serve as a model system to study gate oxides in metal-on-semiconductor field-effect transistors (MOS-FETs). Two possible implementations exist both of which rely on pairs of measurements to be made: in method A, the wafer piece of interest and a reference sample (here: ultra-clean fused quartz glass for calibration of the effective k-factors of X-ray lines from elements O and Si) are analysed at the same acceleration voltage. In method B, two measurements of the apparent O/Si ratio of the same wafer sample need to be made at different acceleration voltages and from their comparison to simulations the SiO2 layer thickness of the sample can be inferred. The precision attainable is ultimately shown to be limited by surface contamination during the experiments, as very thin carbonaceous surface layers can alter the results at very low acceleration voltages, while the sensitivity to ultra-thin surface oxides is much reduced at higher acceleration voltages. The optimal operation voltage is estimated to lie in the range of 3–15 kV. Method A has been experimentally verified to work well for test structures of thin oxides on Si-Ge/Si.

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Kim, J.-D., and S.-R. Nam. "Development of a Micro-Positioning Grinding Table Using Piezoelectric Voltage Feedback." Proceedings of the Institution of Mechanical Engineers, Part B: Journal of Engineering Manufacture 209, no. 6 (December 1995): 469–74. http://dx.doi.org/10.1243/pime_proc_1995_209_110_02.

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Micro-positioning systems using piezoelectric actuators have a very wide range of applications including ultra-precision machine tools, optical devices and measurement systems. In order to ensure a high-precision displacement resolution, they use a position sensor and error feedback. From a practical point of view, a high-resolution displacement sensor system is very expensive and it is difficult to guarantee that such sensitive sensors work properly in the harsh operating environments of industry. In this paper, a micro-positioning grinding table has been developed which does not require a position sensor but instead uses piezoelectric voltage feedback. It is driven by a hysteresis-sensitive reference input voltage calculated by computer using the actuator/sensor characteristics of piezoelectric materials. The experimental results illustrate the fast and stable response of the micro-positioning system, and the paper suggests a more efficient technique for controlling piezoelectric actuators.

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Song, Min Hui, Jiao Jiao Long, and Xiao Ning Liu. "Multiple Control System Design for Superconducting Power Supply Based on RST Algorithm." Applied Mechanics and Materials 615 (August 2014): 356–60. http://dx.doi.org/10.4028/www.scientific.net/amm.615.356.

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The power supply for the superconducting outsert of Steady High Magnetic Field Facility (SHMFF) in High Magnetic Field Laboratory of Chinese Academy of Sciences requires very high precision and high stability (10 ppm of 13kA). In this paper, a multiple controller has been developed which is in combination with analogue control in the voltage-loop and digital control (RST algorithm) in the current-loop. The system model and the detailed design and evaluation of the method are all presented. And the simulation and experimental results finally manifests that the output current can follow the reference perfectly (no lagging error, no overshoot), and its precision (<10ppm) and the output voltage fluctuation (<1%) both meet the requirements. Therefore, the proposed control system for the superconducting power supply is proved to be feasible.

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Serrano, Javier, Javier Moriano, Mario Rizo, and Francisco Dongil. "Enhanced Current Reference Calculation to Avoid Harmonic Active Power Oscillations." Energies 12, no. 21 (October 25, 2019): 4075. http://dx.doi.org/10.3390/en12214075.

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Energy storage systems play a key role in the rise of distributed power generation systems, hence there is great interest in extending their lifetimes, which are directly related to DC current ripple. One of the ripple sources is the low-frequency active power fluctuations under unbalanced and distorted grid voltage conditions. Therefore, this paper addresses a multifrequency control strategy where the harmonic reference currents are calculated to reduce harmonic active power oscillations. The stationary reference frame (StRF) approach taken here improves the precision and computational time of the current reference calculation method. Additionally, in order to ensure safe converter operation when a multifrequency reference current is provided, a computational efficient peak current saturator is applied while avoiding signal distortion every time step. If the injected current harmonic distortion is to be minimized, which is a feature included in this work, the peak current saturator is a necessary requirement. Active power ripple is reduced even with frequency variations in the grid voltage using a well-known frequency-adaptive scheme. The simulation and experimental results prove the optimized performance for the control objective: power ripple reduction with minimum current harmonic distortion.

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Ghanavati Nejad, Tayebeh, Ebrahim Farshidi, Henrik Sjöland, and Abdolnabi Kosarian. "An ultra-low power high-precision logarithmic-curvature compensated all-CMOS voltage reference in 65 nm CMOS." Analog Integrated Circuits and Signal Processing 107, no. 2 (February 25, 2021): 319–30. http://dx.doi.org/10.1007/s10470-021-01806-1.

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Zhang, Xiaowei, Wei Fan, Jianxiong Xi, and Lenian He. "14-Bit Fully Differential SAR ADC with PGA Used in Readout Circuit of CMOS Image Sensor." Journal of Sensors 2021 (February 22, 2021): 1–17. http://dx.doi.org/10.1155/2021/6651642.

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This paper proposes a 14-bit fully differential Successive Approximation Register (SAR) Analog-to-Digital Converter (ADC) with a programmable gain amplifier (PGA) used in the readout circuit of CMOS image sensor (CIS). SAR ADC adopts two-step scaled-reference voltages to realize 14-bit conversion, aimed at reducing the scale of capacitor array and avoiding using calibration to mitigate the impact of offset and mismatch. However, the reference voltage self-calibration algorithm is applied on the design to guarantee the precision of reference voltages, which affects the results of conversion. The three-way PGA provides three types of gains: 3x, 4x, and 6x, and samples at the same time to get three columns of pixel signal and increase the system speed. The pixel array of the mentioned CIS is 1026 × 1024 , and the pixel pitch is 12.5 μ m × 12.5 μ m . The prototype chip is fabricated in the 180 nm CMOS process, and both digital and analog voltages are 3.3 V. The total area of the chip is 6.25 × 18.38 mm2. At 150 kS/s sampling rate, the SNR of SAR ADC is 71.72 dB and the SFDR is 82.91 dB. What is more, the single SAR ADC consumes 477.2 uW with the 4.8 V PP differential input signal and the total power consumption of the CIS is about 613 mW.

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Pessina, Gianluigi. "Low-noise, low drift, high precision linear bipolar (±10 V) voltage supply/reference for cryogenic front-end apparatus." Review of Scientific Instruments 70, no. 8 (August 1999): 3473–78. http://dx.doi.org/10.1063/1.1149939.

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Arkin, Michael, Jeff Watson, Michael Siu, and Michael Cusack. "Precision Analog Signal Conditioning Semiconductors for Operation in Very High Temperature Environments." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (January 1, 2013): 000139–51. http://dx.doi.org/10.4071/hiten-ta17.

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When designing signal chains for systems exposed to high temperature environments, analog signal processing ICs are needed to enable precision sensor measurements. However, as ambient operating temperatures increase beyond the typical extended-industrial +125°C limit, the performance characteristics of analog semiconductors are strongly impacted by the effects of temperature on circuit design, packaging, and the underlying fabrication process. In this paper we introduce two new precision analog components, an operational amplifier and voltage reference, rated for very high temperature operation. We then discuss the steps taken to ensure their performance at high temperature is robust and can be maintained over a limited lifetime. Finally, we demonstrate these devices utilized in an example application: a constant current source for temperature sensor signal conditioning.

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Sun, Li Xia, Qi Jiu Zhang, Sheng Yuan Jiang, Xu Dong Jiang, and Yao Wang. "Experimental Research on Mechanical Adaptability Properties of Tri-Axis Differential-Drive In-Pipe Robot." Advanced Materials Research 221 (March 2011): 175–79. http://dx.doi.org/10.4028/www.scientific.net/amr.221.175.

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An off-line analyzing system is developed to investigate the mechanical adaptability properties of tri-axis differential-drive in-pipe robot. It can real-time obtain the reference velocity without trackslip and the practical velocity for the driving wheels, load carrying properties for the in-pipe robot, as well as the current and voltage of the driving motor. The mechanical adaptability property indexes, such as the driving efficiency, adaptive precision and differential velocity property, are proposed and determined in experiments for the in-pipe robot. It is indicated that the tri-axis differential-drive is provided with the high driving efficiency and differential velocity precision, verifying its remarkable adaptability to various in-pipe configuration.

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Niu, Man Ke, Zheng Wei Lei, and Bao Qiang Yang. "The Improvement of Command Voltage Signal Instability for Equipment Calibration in Outdoor Field." Advanced Materials Research 718-720 (July 2013): 958–62. http://dx.doi.org/10.4028/www.scientific.net/amr.718-720.958.

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In a kind of large test system, the whole equipment is constituted of many multiple subsystems. These subsystems become one by the interconnection. During the measuring and calibrating procedure for the test system at the outdoor training venue, many low-voltage DC signal the need to be measured at very high precision. The signal being measured were often found instability caused by the interference from various kinds of factors in the actual measurement, In order to ensure accuracy of measuring data and credible for results, to provide practical and reliable data reference for the effectiveness of the equipment system, we must analyze the causes of interference and to take effective measures targeted respectively.

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Liu, Guo Jun, Jian Fang Liu, Jian Qiao Li, Zhi Gang Yang, and Jia Zhu. "An Inchworm Bionic Stepping Actuator Based on PZT/ER Hybrid Dive and Control." Applied Mechanics and Materials 461 (November 2013): 330–41. http://dx.doi.org/10.4028/www.scientific.net/amm.461.330.

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An unconventional inchworm stepping actuator based on bionics is presented, which consists of driving unit (PZT stack pump), fluid control unit (ER fluids valve), actuating mechanism (precision hydraulic cylinder). As a new type of precision force/ displacement driving and positioning system, it inherits the advantages of conventional inchworm actuators, and also has its own remarkable characteristics, such as that stepping displacement can be adjusted precisely through varying the working voltage and frequency, etc. The driving unit is actuated jointly by double PZT stacks; Multi-channel parallel cylindrical ER fluids valve is designed as the control valve. In the lab, the inchworm bionic stepping actuator based on PZT/ ER hybrid dive and control is designed and manufactured, and the related performances are testedsystematically. The maximum driving force reaches 49N, and the step size and driving speed VS the working voltage shows a good linear relationship under three different signal waveforms. At the same time, in the frequency range less than 40Hz, the driving speed VS the frequency approximately shows a linear relationship. When working voltage is 100V and rectangle wave signal inputs, the step size reaches 12.6μm. When the working voltage and frequency is 100V, 40Hz, respectively, the driving speed reaches 420μm/s. The maximum drive speed of test prototype reaches 1051 μm/s, when working in frequency 75 Hz. The systematic test shows that the method using PZT and ER hybrid drive and control technology to develop a new type of inchworm bionic stepping actuator is feasible, which provides a reference for the future development of new type of actuator.

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Liu, Jincheng, Jiguang Yue, Li Wang, Chenhao Wu, and Feng Lyu. "A Low-Cost, High-Precision Method for Ripple Voltage Measurement Using a DAC and Comparators." Electronics 8, no. 5 (May 27, 2019): 586. http://dx.doi.org/10.3390/electronics8050586.

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As the core of electronic system, the switched-mode power supply (SMPS) will lead to serious accidents and catastrophes if it suddenly fails. According to the related research, the monitoring of ripple can acquire the health degree of SMPS indirectly. To realize low-cost, high-precision, and automatic ripple measurement, this paper proposes a new ripple voltage (peak-to-peak value) measuring scheme, utilizing a DAC and two high-speed comparators. Within this scheme, the DC component of SMPS output is blocked by a high-pass filter (HPF). Then, the filtered signal and the reference voltage from a DAC together compose the input of a high-speed comparator. Finally, output pulses of the comparator are captured by a microcontroller unit (MCU), which readjusts the output of the DAC by calculation, and this process is repeated until the DAC output is exactly equal to the peak (or valley) value of ripple. Moreover, in order to accelerate the measurement process, a peak estimation method is specially designed to calculate the output ripple peak (or valley) value of buck topology through merely two measurements. Then the binary search method is utilized to obtain a more exact value on the basis of estimative results. Additionally, an analysis of the measurement error of this ripple measurement system is executed, which shows that the theoretical error is less than 0.5% where the ripple value is larger than 500 mV. Furthermore, appropriate components are selected, and a prototype is manufactured to verify the validity of the proposed theory.

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