Relevant bibliographies by topics / Pseudomorphic High Electron Mobility Transistor (pHEMT) / Dissertations / Theses
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Dissertations / Theses on the topic 'Pseudomorphic High Electron Mobility Transistor (pHEMT)'

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Published: 4 June 2021
Last updated: 8 February 2022

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1

Mohamad, Isa Muammar Bin. "Low Noise Amplifiers using highly strained InGaAs/InAlAs/InP pHEMT for implementation in the Square Kilometre Array (SKA)." Thesis, University of Manchester, 2012. https://www.research.manchester.ac.uk/portal/en/theses/low-noise-amplifiers-using-highly-strained-ingaasinalasinp-phemt-for-implementation-in-the-square-kilometre-array-ska(31b6cbae-7b7e-43fe-a612-b3555dd2263d).html.

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The Square Kilometre Array (SKA) is a multibillion and a multinational science project to build the world’s largest and most sensitive radio telescope. For a very large field of view, the combined collecting area would be one square kilometre (or 1, 000, 000 square metre) and spread over more than 3,000 km wide which will require a massive count of antennas (thousands). Each of the antennas contains hundreds of low noise amplifier (LNA) circuits. The antenna arrays are divided into low, medium and high operational frequencies and located at different positions to boost up the telescope’s scann
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Ahmad, Norhawati Binti. "Modelling and design of Low Noise Amplifiers using strained InGaAs/InAlAs/InP pHEMT for the Square Kilometre Array (SKA) application." Thesis, University of Manchester, 2012. https://www.research.manchester.ac.uk/portal/en/theses/modelling-and-design-of-low-noise-amplifiers-using-strained-ingaasinalasinp-phemt-for-the-square-kilometre-array-ska-application(b2b50fd8-0a13-4f71-b3f0-616ee4b2a82b).html.

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The largest 21st century radio telescope, the Square Kilometre Array (SKA) is now being planned, and the first phase of construction is estimated to commence in the year 2016. Phased array technology, the key feature of the SKA, requires the use of a tremendous number of receivers, estimated at approximately 37 million. Therefore, in the context of this project, the Low Noise Amplifier (LNA) located at the front end of the receiver chain remains the critical block. The demanding specifications in terms of bandwidth, low power consumption, low cost and low noise characteristics make the LNA top
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Pearson, John Lawson. "Scattering and mobility in indium gallium arsenide channel, pseudomorphic high electron mobility transistors (InGaAs pHEMTs)." Thesis, University of Glasgow, 1999. http://theses.gla.ac.uk/6613/.

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Extensive transport measurements have been completed on deep and shallow-channelled InGaAs p-HEMTS of varying growth temperature, indium content, spacer thickness and doping density, with a view to thorough characterisation, both in the metallic and the localised regimes. Particular emphasis was given to MBE grown layers, with characteristics applicable for device use, but low measurement temperatures were necessary to resolve the elastic scattering mechanisms. Measurements made in the metallic regime included transport and quantum mobility - the former over a range of temperatures between 1.5
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Huang, Yi-Wen, and 黃怡文. "Fabrication of AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs) with Electroless Plated Technology." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/63075357985962458988.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>95<br>In this thesis, AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs) grown by metal organic chemical vapor deposition (MOCVD) have been fabricated and investigated. Due to the thermal damage of physical vacuum depositions, Fermi-level is almost pinned at constant value instead of different metal work function. This results in a lower Schottky barrier height of the studied devices. In order to eliminate Fermi-level pinning effect, electroless plated technology is employed to deposit metal gate to obtain well-behaved Schottky contact
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Shiau, Ying-Chern, and 蕭應辰. "Study of Double Heterojunction Power Pseudomorphic High Electron Mobility Transistor." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/83791465686251673278.

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碩士<br>國立成功大學<br>電機工程學系<br>88<br>One way of improving the AlGaAs/GaAs conventional HEMT performance is to use InGaAs as the two-dimensional electron gas channel material instead of GaAs. Because the InGaAs pseudomorphic channel is buried inside the double heterojunction layers, the processing techniques developed for AlGaAs/GaAs conventional HEMTs can be used for pseudomorphic HEMTs without modification. Gate recess is a important process during the fabrication of PHEMT device. For power applications, a recess opening larger than the gate is necessary to obtain a large BVgd. Our inve
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6

Hwu, Yuh-Feng, and 胡玉豐. "Study of GaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/66642656149149045039.

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7

Yang, Chuang-Jeu, and 楊長舉. "Characteristics of pseudomorphic high electron mobility transistor under different temperature." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/24rf3f.

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碩士<br>崑山科技大學<br>電機工程研究所<br>91<br>In this thesis, we use the In0.52Al0.48As Barrier layer to confine the electron in the In0.535Ga0.465As channel layer. The electon mobility can be improved by using InGaAs channel. The electron mobility are 9600 cm2/v-s and 37400 cm2/v-s under 300K and 77K, respectively. The characteristics of the device will be discussed under different temperature (300K, 325K, 350K, 375K, 400K, 425K). The extrinsic transconductance and saturatiom current density are 208mS/mm and 296mA/mm under 300K. The extrinsic transconductance and saturatiom current density are 166mS/mm an
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8

Yang, Ya-wen, and 楊雅雯. "Enhancement-mode Pseudomorphic High Electron Mobility Transistor Model and Microwave Power Amplifier." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/98383367635348155630.

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碩士<br>國立中央大學<br>電機工程研究所<br>97<br>Power amplifier is a very important component in the wireless transmitter. The high performance power amplifier must depend on accurate nonlinear device model. In this thesis, an accurate nonlinear model and a high linearity power amplifier are designed, analyzed, and demonstrated for InGaAs pHEMT. We proposed a novel current model for 0.5 μm InGaAs pHEMTs enhancement-mode device. The model is differentiable for any order at full bias range by utilizing smooth function technique in the symbolical defined device environment (SDD). The Statz charge model is inc
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CHU, LI HSIN, and 褚立新. "The study of Enhancement-mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/52835255368169983220.

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博士<br>國立交通大學<br>材料科學與工程系所<br>96<br>In recent years, digital wireless communication technology develops rapidly around the world. It is believed that the digital wireless technologies are the major trends for the future wireless communication systems. The purpose of this dissertation is to develop the Enhancement-mode high-electron-mobility transistor (HEMT) for the digital wireless communication systems with improved device structures and the related process technologies. In this dissertation, the InGaP/AlGaAs/InGaAs structure was used to fabricate the enhancement-mode high-electron-mobility
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10

Wu, Ming-Cang, and 吳明蒼. "Optical and electrical characterization of the InGaAs/AlGaAs pseudomorphic high electron mobility transistor structures." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/85410721917654983266.

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碩士<br>國立彰化師範大學<br>電子工程學系<br>95<br>We will present the studies of two-dimensional electron gas (2DEG) in four InGaAs/AlGaAs pseudomorphic high electron mobility transistor structures with different indium compositions and width of well using photoluminescence (PL), gate bias-dependent PL, photoreflectance (PR), electroreflectance (ER), photoconductivity (PC), Hall measurement and C-V measurement in the temperature range between 10 and 300K. In the PL spectra, the optical features are identified to be the transitions coming from InGaAs channel layer. In low temperature PL spectra of samples A, B
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Chang, Yao-Chung, and 張耀中. "Optical and electrical characterization of the AlGaAs/InGaAs pseudomorphic high electron mobility transistor structures." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/31691167250534360819.

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碩士<br>國立彰化師範大學<br>電子工程學系<br>102<br>We divided this thesis into simulation and experiment. First of all, we present a study of photoluminescence investigations of InGaAs/AlGaAs pseudomorphic high electron mobility transistor structures by using the advanced physical models of semiconductor devices (APSYS). In this study, On the other hand, we will present the studies of two-dimensional electron gas (2DEG) in four InGaAs/AlGaAs pseudomorphic high electron mobility transistor structures with different spacer layer thickness using photoluminescence (PL), gate bias-dependent PL and Hall measurement
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Chang, Han-Yu, and 張翰宇. "Optical and electrical characterization of the AlGaAs/GaAs/InGaAs pseudomorphic high electron mobility transistor structures." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/9g6m39.

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碩士<br>國立彰化師範大學<br>電子工程學系<br>106<br>We will present the studies of two-dimensional electron gas (2DEG) in four AlGaAs/GaAs/InGaAs pseudomorphic high electron mobility transistor structures with different thickness of schottky layer and different doping concentration in planar-doping layer using current-voltage (I-V), photoluminescence (PL), photocurrent (PC), photovoltage (PV), Hall effect measurement in the temperature range between 20 and 340 K. The samples used in this study were grown on GaAs substrate by metal organic chemical vapor deposition (MOCVD) method. In the PL spectra, the optica
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Zou, Yong-Jie, and 鄒永捷. "Liquid Phase Deposited TiO2 as Gate Dielectric for AlGaAs/InGaAs Pseudomorphic High-Electron-Mobility Transistor Application." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/36118519500657571622.

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碩士<br>義守大學<br>電子工程學系<br>101<br>The study used liquid phase deposition (LPD) on the AlGaAs Schottky layers, and application to depletion-mode (D-mode) AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) as a gate insulator. Before LPD, we used sulfur pre-treatment to cram dangling bond and improved interface trapped charge for obtaining good interface. On the other hand, we improve the electrical characteristics of LPD-TiO2 film by using rapid thermal annealing (RTA). Compare with another system, LPD does not need any energy to assist. Only put th
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14

Lin, Jyun-Jie, and 林俊杰. "Investigation of Liquid Phase Oxidation on Enhancement-Mode AlGaAs/InGaAs Metal-Oxide-Semiconductor Pseudomorphic High Electron Mobility Transistor." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/thw2gd.

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碩士<br>義守大學<br>電子工程學系<br>102<br>In this thesis, liquid phase oxidation (LPO) on enhancement-mode AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) has been demonstrated. LPO was used on the GaAs cap layer to replace the traditional gate-recess process of the cap layer to further reduce the surface state and simplify the process. The maximum drain current density of 184 mA/mm, the maximum peak transconductance is 154 mS/mm at the VDS = 2 V, two-terminal diode of the reverse breakdown voltage is -25 V for MOS-PHEMT. Microwave characteristics and l
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15

Lu, Cheng-Tao, and 呂政道. "Optical and electrical characterizations of the AlGaAs/InGaAs pseudomorphic and InAlAs/InGaAsSb metamorphic high electron mobility transistor structures." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/75104674100034442950.

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碩士<br>國立彰化師範大學<br>電子工程學系<br>98<br>We present the studies of two-dimensional electron gas (2DEG) on both InAlAs/InGaAsSb/InAlAs metamorphic high electron mobility transistor (mHEMT) and AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) structures using temperature-dependent photoluminescence (PL) and Hall measurements. These two samples were grown by metal-organic chemical vapor deposition (MOCVD) on GaAs substrate and were designated as A(mHEMT) and B(pHMET). In the PL spectra of sample A, two optical features identified as 11H and 31H were observed. We extracted the
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Chen, Wei-Sheng, and 陳瑋昇. "Liquid Phase Oxidized GaAs as Gate Insulator for Enhancement-Mode InGaP/InGaAs Metal-Oxide-Semiconductor Pseudomorphic High-Electron-Mobility Transistor Applications." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/36588853812928622135.

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碩士<br>義守大學<br>電子工程學系碩士班<br>99<br>The study uses liquid phase oxidation (LPO) on the GaAs cap layer, and application to enhancement-mode (E-mode) InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) as a gate insulator. Instead of the traditional gate-recess of the cap and Schottky layers, directly oxidation of cap layer would reduce the surface state and simplify the process. The gate dimension of the devices is 1 × 100 μm2. For the DC characteristics, the peak transconductance (gm) and the maximum gate voltage are 141 mS/mm and 2 V, respectively.
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