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Academic literature on the topic 'Pufferschicht'
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Journal articles on the topic "Pufferschicht"
Amano, Hiroshi. "Bildung von GaN-Schichten auf Saphir durch Niedertemperatur-Pufferschichten und Erzeugung von p-GaN durch Magnesium-Dotierung und Elektronenbeschuss (Nobel-Aufsatz)." Angewandte Chemie 127, no. 27 (June 1, 2015): 7874–79. http://dx.doi.org/10.1002/ange.201501651.
Full textDissertations / Theses on the topic "Pufferschicht"
Eisele, Wolfgang. "Struktur und Funktion von ZnSe-Pufferschichten in Chalkopyritdünnschichtsolarzellen." [S.l. : s.n.], 2002. http://www.diss.fu-berlin.de/2003/36/index.html.
Full textEngel, Sebastian. "Chemisch deponierte Schichtsysteme zur Realisierung von YBa2Cu3O7−d-Bandleitern." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2009. http://nbn-resolving.de/urn:nbn:de:bsz:14-ds-1244452357143-40430.
Full textBauer, Matthias [Verfasser]. "Ultradünne hochrelaxierte SiliziumGermanium Pufferschichten auf Si als "virtuelle Substrate" / Matthias Bauer." Aachen : Shaker, 2003. http://d-nb.info/1170541615/34.
Full textEngel, Sebastian. "Chemisch deponierte Schichtsysteme zur Realisierung von YBa2Cu3O7−d-Bandleitern." Doctoral thesis, Technische Universität Dresden, 2008. https://tud.qucosa.de/id/qucosa%3A23824.
Full textMuffler, Hans-Jürgen. "Umsetzung und Funktionsprinzip eines alternativen Material- und Abscheidekonzepts für Pufferschichten von Solarzellen." [S.l. : s.n.], 2001. http://www.diss.fu-berlin.de/2001/156/index.html.
Full textErfurth, Felix. "Elektronenspektroskopie an Cdfreien Pufferschichten und deren Grenzflächen in Cu(In,Ga)(S,Se)2 Dünnschichtsolarzellen." kostenfrei, 2010. http://www.opus-bayern.de/uni-wuerzburg/volltexte/2010/4620/.
Full textHorenburg, Philipp [Verfasser], Andreas [Akademischer Betreuer] Hangleiter, and Andreas [Akademischer Betreuer] Waag. "(Al,Ga,In)N-Pufferschichten für effiziente Quantenfilm-Strukturen verschiedener Kristallorientierungen / Philipp Horenburg ; Andreas Hangleiter, Andreas Waag." Braunschweig : Technische Universität Braunschweig, 2020. http://d-nb.info/1224046048/34.
Full textOhlmann, Jens [Verfasser], and Kerstin [Akademischer Betreuer] Volz. "Herstellung und Charakterisierung von metamorphen Pufferschichten für Ga(AsP)-Tandem-Solarzellen auf Si / Jens Ohlmann. Betreuer: Kerstin Volz." Marburg : Philipps-Universität Marburg, 2013. http://d-nb.info/1045729833/34.
Full textHerklotz, Andreas. "Einfluss reversibler epitaktischer Dehnung auf die ferroische Ordnung dünner Schichten." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2012. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-87097.
Full textIn this work, the effect of epitaxial strain on the properties of ferromagnetic and ferroelectric perovskite thin films is studied. Single-crystalline piezoelectric Pb(Mg1/3Nb2/3)0.72Ti0.28O3 (001) substrates (PMN-PT) are utilized to reversibly change the biaxial strain state of the films. The measurements performed by this “dynamic” approach are complemented by studying statically strained films grown on LaAlxSc1-xO3 buffer layers with deliberately tuned lattice misfit. Three different material systems are investigated: the ferromagnetic oxides La0.8Sr0.2CoO3 and SrRuO3 and the ferroelectric compound Pb(Zr,Ti)O3. In case of La0.8Sr0.2CoO3 a strain-induced transition from the known ferromagnetic phase to a magnetically less ordered spinglas-like phase is observed. No indications for an effect on the Co spin state are found. In epitaxial SrRuO3 films tensile strain is causing a structural phase transition from the bulk-like orthorhombic structure to an out-of-plane oriented tetragonal phase. The magnetic easy axis is in the film plane. Reversible strain experiments show a significant effect on the ferromagnetic ordering temperature and point to a small change of the magnetic moment. The strain effect on the electric transport properties is also determined. Pb(Zr,Ti)O3 as a standard ferroelectric material is used to study the influence of biaxial strain on the ferroelectric switching behaviour of thin films for the first time. At small electric fields the measurements reveal the typical signs of creep-like domain wall motion caused by wall pinning. In this regime the switching process is accelerated strongly under piezo-compression. For higher electric fields a transition of the domain wall motion to the depinning regime is observed. Here, the switching kinetics is slowed down moderately by compressive strain
Jarzina, Harald. "Herstellung und Charakterisierung metallorganisch deponierter Pufferschichten für YBa2Cu3O7." Doctoral thesis, 2003. http://hdl.handle.net/11858/00-1735-0000-0006-B4C5-E.
Full textBooks on the topic "Pufferschicht"
Westerwalbesloh, Thomas E. Optimierung der Schichstrukturen, Grenzflächen und Pufferschichten von Mo/Si-Multischichten in Hinsicht auf die EUV Reflektivität. Bielefeld?: s.n., 2003.
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