Academic literature on the topic 'Pulse force nanolithography'

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Journal articles on the topic "Pulse force nanolithography"

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Темирязев, А. Г., М. П. Темирязева, А. В. Здоровейщев та ін. "Формирование магнитных наноструктур с помощью зонда атомно-силового микроскопа". Журнал технической физики 89, № 11 (2019): 1807. http://dx.doi.org/10.21883/jtf.2019.11.48349.120-19.

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The paper presents examples of the use of pulse force nanolithography, performed with a probe of an atomic force microscope, to form magnetic nanowires, nanocontacts, one- and two-dimensional arrays with characteristic dimensions of about 50-100 nm.
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Pellegrino, Paolo, Isabella Farella, Mariafrancesca Cascione, et al. "Investigation of the Effects of Pulse-Atomic Force Nanolithography Parameters on 2.5D Nanostructures’ Morphology." Nanomaterials 12, no. 24 (2022): 4421. http://dx.doi.org/10.3390/nano12244421.

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In recent years, Atomic Force Microscope (AFM)-based nanolithography techniques have emerged as a very powerful approach for the machining of countless types of nanostructures. However, the conventional AFM-based nanolithography methods suffer from low efficiency, low rate of patterning, and high complexity of execution. In this frame, we first developed an easy and effective nanopatterning technique, termed Pulse-Atomic Force Lithography (P-AFL), with which we were able to pattern 2.5D nanogrooves on a thin polymer layer. Indeed, for the first time, we patterned nanogrooves with either consta
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Lutsenko, Savelii V., Mikhail A. Kozhaev, Olga V. Borovkova, et al. "Multiperiodic magnetoplasmonic gratings fabricated by the pulse force nanolithography." Optics Letters 46, no. 17 (2021): 4148. http://dx.doi.org/10.1364/ol.433309.

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Temiryazev, Alexei. "Pulse force nanolithography on hard surfaces using atomic force microscopy with a sharp single-crystal diamond tip." Diamond and Related Materials 48 (September 2014): 60–64. http://dx.doi.org/10.1016/j.diamond.2014.07.001.

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Stepushkin, Mikhail V., Vladimir G. Kostishin, Vladimir E. Sizov, and Alexei G. Temiryazev. "Use of atomic force microscope for the synthesis of GaAs/AlGaAs heterostructure base one-dimensional structure." Modern Electronic Materials 4, no. (4) (2018): 163–66. https://doi.org/10.3897/j.moem.4.4.47093.

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Electron transport in low-dimensional structures is often studied using semiconductor heterostructures with two-dimensional electron gas in which insulating regions separating the conducting channel from the gates are synthesized using one of available methods. These structures are distinguished by the high quality of the initial wafers and the necessity to change the surface topology during the study, this making photolithography ineffective. In this work we analyze the technology of insulating grooves that uses atomic force microscope, i.e. the pulse force nanolithography, which allows eithe
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Stepushkin, Mikhail V., Vladimir G. Kostishin, Vladimir E. Sizov, and Alexei G. Temiryazev. "Use of atomic force microscope for the synthesis of GaAs/AlGaAs heterostructure base one-dimensional structure." Modern Electronic Materials 4, no. 4 (2018): 163–66. http://dx.doi.org/10.3897/j.moem.4.4.47093.

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Electron transport in low-dimensional structures is often studied using semiconductor heterostructures with two-dimensional electron gas in which insulating regions separating the conducting channel from the gates are synthesized using one of available methods. These structures are distinguished by the high quality of the initial wafers and the necessity to change the surface topology during the study, this making photolithography ineffective. In this work we analyze the technology of insulating grooves that uses atomic force microscope, i.e. the pulse force nanolithography, which allows eithe
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Pellegrino, Paolo, Isabella Farella, Mariafrancesca Cascione, et al. "Pile-Ups Formation in AFM-Based Nanolithography: Morpho-Mechanical Characterization and Removal Strategies." Micromachines 13, no. 11 (2022): 1982. http://dx.doi.org/10.3390/mi13111982.

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In recent decades, great efforts have been made to develop innovative, effective, and accurate nanofabrication techniques stimulated by the growing demand for nanostructures. Nowadays, mechanical tip-based emerged as the most promising nanolithography technique, allowing the pattern of nanostructures with a sub-nanometer resolution, high reproducibility, and accuracy. Unfortunately, these nanostructures result in contoured pile-ups that could limit their use and future integration into high-tech devices. The removal of pile-ups is still an open challenge. In this perspective, two different AFM
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Borisov, V. I., N. A. Kuvshinova, S. P. Kurochka, V. E. Sizov, M. V. Stepushkin, and A. G. Temiryazev. "Semiconductor Structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography." Semiconductors 51, no. 11 (2017): 1481–84. http://dx.doi.org/10.1134/s1063782617110082.

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Pellegrino, Paolo, Alessandro Paolo Bramanti, Isabella Farella, et al. "Pulse-Atomic Force Lithography: A Powerful Nanofabrication Technique to Fabricate Constant and Varying-Depth Nanostructures." Nanomaterials 12, no. 6 (2022): 991. http://dx.doi.org/10.3390/nano12060991.

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The widespread use of nanotechnology in different application fields, resulting in the integration of nanostructures in a plethora of devices, has addressed the research toward novel and easy-to-setup nanofabrication techniques to realize nanostructures with high spatial resolution and reproducibility. Owing to countless applications in molecular electronics, data storage, nanoelectromechanical, and systems for the Internet of Things, in recent decades, the scientific community has focused on developing methods suitable for nanopattern polymers. To this purpose, Atomic Force Microscopy-based n
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Stepushkin, M. V., V. G. Kostishyn, V. E. Sizov, and A. G. Temiryazev. "Application of atomic–force microscope for creation of one–dimensional structure on the basis of GaAs/AlGaAs heterostructure." Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 21, no. 4 (2019): 227–32. http://dx.doi.org/10.17073/1609-3577-2018-4-227-232.

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In the study of electron transport in low-dimensional structures, semiconductor heterostructures with a two-dimensional electron gas are often used. The conductive channel of these structures is separated from the gates by insulating regions, which can be formed in a varitey of ways. The peculiarities of such structures are the high quality of the initial plates and the need to change the topology in the research process. This makes the use of photolithography ineffective.This paper discusses the technology of forming insulating grooves using an atomic force microscope — a method of pulsed for
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Conference papers on the topic "Pulse force nanolithography"

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Chimmalgi, Anant, and Costas P. Grigoropoulos. "Combined Experimental and Theoretical Study of Femtosecond Laser Based Micro/Nano Machining of Ultra Thin Metallic Films." In ASME 2003 International Mechanical Engineering Congress and Exposition. ASMEDC, 2003. http://dx.doi.org/10.1115/imece2003-41631.

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The effectiveness of ultra-short pulsed laser radiation for high-precision material processing and surface micro-modification, owing to the minimal thermal and mechanical damage, has been shown. Micro/Nano structuring of thin films is gaining widespread importance owing to ever-increasing applications in a variety of fields. The present study details femtosecond laser interaction with ultra thin metallic films at the micro and nano scales. Results of Microablation studies, carried out with an 800nm wavelength, 80fs pulse duration, femtosecond laser focused tightly using a long working distance
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Kumar, Kitu, Onejae Sul, Yao-Tsan Tsai, et al. "Nanoscale Graphene and Carbon Nanotube Lithography Using an Atomic Force Microscope." In ASME 2009 International Mechanical Engineering Congress and Exposition. ASMEDC, 2009. http://dx.doi.org/10.1115/imece2009-10646.

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In this work, we demonstrate the use of a voltage-applied Atomic Force Microscopy (VAFM) local anodic oxidation nanolithography process to precisely fabricate small (<20 nm) structures from graphene and carbon nanotube material. These graphitic materials have exceptional electrical properties which give them a niche in emerging nanoelectronics applications requiring quantum structures. While several methods for nanoscale patterning of these materials exist, the VAFM nanolithography technique has lately been shown to address the fabrication issues of graphitic nanodevices on the order of
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