Relevant bibliographies by topics / Pulsed laser deposition (PLD)

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Pulsed laser deposition (PLD)'

Author: Grafiati
Published: 4 June 2021
Last updated: 13 April 2024

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Journal articles on the topic "Pulsed laser deposition (PLD)"

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Hubler, Graham K. "Pulsed Laser Deposition." MRS Bulletin 17, no. 2 (February 1992): 26–29. http://dx.doi.org/10.1557/s0883769400040586.

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Research on materials grown by pulsed laser deposition, or PLD, has experienced phenomenal growth since late 1987 when T. Venkatesan (one of the authors for this issue) and co-workers pointed out that extreme nonequilibrium conditions created by pulsed laser melting of YBaCuO allowed in-situ preparation of thin films of this high transition temperature (Tc) superconducting material. Since then, PLD has emerged as the primary means for high throughput deposition of high-quality superconducting thin films for research and devices. This probably came as no surprise to J.T. Cheung (another of this issue's authors), who performed original research in this area and tirelessly labored during the 1980s to convince a skeptical audience of the advantages of PLD.Along with the success of PLD in the arena of high-temperature superconductivity, however, is the explosion of activity in the deposition of many other materials, made possible by the unique features of pulsed laser deposition, materials previously not amenable to in-situ thin film growth. Creative minds reasoned that since PLD can deposit a demanding, complex material such as the perovskite structure Y1Ba2Cu3O7-δ, why not other perovskites or multicomponent oxide materials? It also turns out that the range of properties of multicomponent oxides is virtually limitless. They can be metallic, insulating, semiconducting, biocompatable, superconducting, ferroelectric, piezoelectric, and so on. One is not limited to the properties of elements or binary compounds on which the electronics and microelectronics industries are based. Indeed, in a recent review of hybrid ferromagnetic- semiconductor structures, G. Prinz states, “… there has been little work devoted to incorporating magnetic materials into planar integrated electronic (or photonic) circuitry there are potential applications that have no analog in vacuum electronics but that remain unrealized, awaiting the development of appropriate materials and processing procedures.” In pulsed laser deposition, we may well have in hand the “appropriate processing procedure” to deposit sequential epitaxial layers of high quality materials that possess profoundly different properties.
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RAO, M. C. "PULSED LASER DEPOSITION — ABLATION MECHANISM AND APPLICATIONS." International Journal of Modern Physics: Conference Series 22 (January 2013): 355–60. http://dx.doi.org/10.1142/s2010194513010362.

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Laser ablation is the process of removing material from a solid surface by irradiating it with a laser beam. At low laser flux, the material is heated by the absorbed laser energy and evaporates or sublimates. At high laser flux, the material is typically converted to a plasma. Usually, laser ablation refers to removing material with a pulsed laser, but it is possible to ablate material with a continuous wave laser beam if the laser intensity is high enough. In general, the method of pulsed laser deposition (PLD) is simple. Only few parameters need to be controlled during the process. Targets used in PLD are small compared with other targets used in other sputtering techniques. It is quite easy to produce multi-layer film composed of two or more materials. Besides, by controlling the number of pulses, a fine control of film thickness can be achieved. Pulsed-laser deposition has been used to deposit an extraordinarily wide range of materials. Historically, the most significant application of PLD has been in the area of high temperature superconducting thin films. The demonstration that PLD could be used to deposit YBa2Cu3O7-x (YBCO) films with zero resistivity at nearly 85 K sparked a significant amount of high temperature superconductivity research over the past decade and has stimulated research in PLD in general. The most striking limitations of PLD are the generation of particulates during the deposition process and the non uniform coating thickness, when substrates of large area are deposited.
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Niemczyk, Moszyński, Jędrzejewski, Kwiatkowski, Piwowarczyk, and Baranowska. "Chemical Structure of EVA Films Obtained by Pulsed Electron Beam and Pulse Laser Ablation." Polymers 11, no. 9 (August 29, 2019): 1419. http://dx.doi.org/10.3390/polym11091419.

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Poly(ethylene-co-vinyl acetate) (EVA) films were deposited for the first time using physical methods. The chemical structure of the films obtained using two techniques, pulsed electron beam deposition (PED) and pulsed laser deposition (PLD), was studied by attenuated total reflection Fourier infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectroscopy (XPS). Whilst significant molecular degradation of the EVA films was observed for the PLD method, the original macromolecular structure was only partially degraded when the PED technique was used, emphasizing the superiority of the PED method over PLD for structurally complex polymers such as EVA. Optical and scanning electron microscopic observations revealed compact and smooth EVA films deposited by pulsed electron beam ablation as opposed to heterogeneous films with many different sized particulates obtained by PLD.
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Deng, Ying, Anthony Pelton, and R. A. Mayanovic. "Comparison of Vanadium Oxide Thin Films Prepared Using Femtosecond and Nanosecond Pulsed Laser Deposition." MRS Advances 1, no. 39 (2016): 2737–42. http://dx.doi.org/10.1557/adv.2016.311.

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ABSTRACTPulsed laser deposition (PLD) is a technique which utilizes a high energy pulsed laser ablation of targets to deposit thin films on substrates in a vacuum chamber. The high-intensity laser pulses create a plasma plume from the target material which is projected towards the substrate whereupon it condenses to deposit a thin film. Here we investigate the properties of vanadium oxide thin films prepared utilizing two variations of the pulsed laser deposition (PLD) technique: femtosecond PLD and nanosecond PLD. Femtosecond PLD (f-PLD) has a significantly higher peak intensity and shorter duration laser pulse compared to that of the excimer-based nanosecond PLD (n-PLD). Experiments have been conducted on the growth of thin films prepared from V2O5 targets on glass substrates using f-PLD and n-PLD. Characterization using SEM, XRD and Raman spectroscopy shows that the f-PLD films have significantly rougher texture prior to annealing and exhibit with an amorphous nano-crystalline character whereas the thin films grown using n-PLD are much smoother and highly predominantly amorphous. The surface morphology, structural, vibrational, and chemical- and electronic-state elemental properties of the vanadium oxide thin films, both prior to and after annealing to 450 °C, will be discussed.
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Wang, Yuxuan, Bin Zou, Bruno Rente, Neil Alford, and Peter K. Petrov. "Deposition of Nanocrystalline Multilayer Graphene Using Pulsed Laser Deposition." Crystals 13, no. 6 (May 27, 2023): 881. http://dx.doi.org/10.3390/cryst13060881.

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The wide application of graphene in the industry requires the direct growth of graphene films on silicon substrates. In this study, we found a possible technique to meet the requirement above. Multilayer graphene thin films (MLG) were grown without a catalyst on Si/SiO2 using pulsed laser deposition (PLD). It was found that the minimum number of laser pulses required to produce fully covered (uninterrupted) samples is 500. This number of laser pulses resulted in samples that contain ~5 layers of graphene. The number of layers was not affected by the laser fluence and the sample cooling rate after the deposition. However, the increase in the laser fluence from 0.9 J/cm2 to 1.5 J/cm2 resulted in a 2.5-fold reduction in the MLG resistance. The present study reveals that the PLD method is suitable to produce nanocrystalline multilayer graphene with electrical conductivity of the same magnitude as commercial CVD graphene samples.
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ZHAO, YAFAN, CHUANZHONG CHEN, MINGDA SONG, JIE MA, and DIANGANG WANG. "EFFECTS OF TECHNICAL PARAMETERS ON THE PULSED LASER DEPOSITED FERROELECTRIC FILMS." Surface Review and Letters 13, no. 05 (October 2006): 687–95. http://dx.doi.org/10.1142/s0218625x06008669.

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Pulsed laser deposition (PLD), which is a novel technique in producing thin films in the recent years, shows unique advantages for the deposition of ferroelectric films. Effects of technical parameters on the pulsed laser deposited ferroelectric films, including substrate temperature, oxygen pressure, post-annealing, buffer layer, target composition, energy density, wavelength, target-to-substrate distance, and laser pulse rate, are systematically reviewed in order to optimize these parameters. Processing-microstructure-property relationships of ferroelectric films by PLD are discussed. The application prospect is pointed as well.
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Cotell, Catherine M., and Kenneth S. Grabowski. "Novel Materials Applications of Pulsed Laser Deposition." MRS Bulletin 17, no. 2 (February 1992): 44–53. http://dx.doi.org/10.1557/s0883769400040616.

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The successful use of pulsed laser deposition (PLD) to fabricate thin film superconductors has generated interest in using the technique to deposit thin films of other materials. The compositional fidelity between laser target and deposited film and the ability to deposit films in reactive gas environments make the PLD process particularly well suited to the deposition of complex multicomponent materials. Cheung and Sankur recently provided an excellent review of the PLD field, including a table of over 100 elements, inorganic and organic compounds, andsuperlattices that have been laser evaporated. Over 75 of these materials were deposited as thin films.The goal of this article is to provide an introduction to some of the newer applications of PLD for thin film fabrication. Four classes of materials are highlighted: ferroelectrics, bioceramics, ferrites, and tribological materials. Ferroelectric materials are structurally related to the high-temperature superconducting oxides and therefore are a direct extension of the recent superconducting oxide work. Bioceramics are dissimilar in structure and application to both ferroelectrics and superconducting oxides, but they are complex multicomponent oxides and, therefore, benefit from the use of PLD. Ferrites, also complex, multicomponent oxides, represent another exciting, but only lightly explored opportunity for PLD. In contrast, tribological materials are typically neither complex nor multicomponent. Nevertheless, interesting structures and properties have been produced by PLD. A few of the more important ones will be discussed. These different types of materials demonstrate the diversity of capabilities offered by PLD.
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Thyen, Laurenz, Daniel Splith, Max Kneiß, Marius Grundmann, and Holger von Wenckstern. "Masked-assisted radial-segmented target pulsed-laser deposition: A novel method for area-selective deposition using pulsed-laser deposition." Journal of Vacuum Science & Technology A 41, no. 2 (March 2023): 020801. http://dx.doi.org/10.1116/6.0002275.

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We introduce a novel technique, masked-assisted radial-segmented target pulsed-laser deposition (MARS-PLD) for unprecedented capabilities in area-selective physical vapor deposition. The MARS-PLD setup consists of a conventional PLD chamber with mechanical feedthrough for a laterally movable mask or mask set. By this means and, in principle, the arbitrary choice of a shadow mask layout, any desired area on a substrate can be masked in order to create multinary lateral and vertical material composition gradients using radially segmented targets already described in the literature [Kneiß et al., ACS Comb. Sci. 20, 643–652 (2018)]. To illustrate the capabilities of this method, we fabricated material gradients in (Mg,Zn)O thin films with a nearly linear spatial variation of the cation composition of [Formula: see text]. Additionally, we fine-tuned our setup to fabricate a material gradient on a predefined two-dimensional lateral pattern to demonstrate the versatile capabilities of the MARS-PLD technique.
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Bulai, Georgiana, Oana Pompilian, Silviu Gurlui, Petr Nemec, Virginie Nazabal, Nicanor Cimpoesu, Bertrand Chazallon, and Cristian Focsa. "Ge-Sb-Te Chalcogenide Thin Films Deposited by Nanosecond, Picosecond, and Femtosecond Laser Ablation." Nanomaterials 9, no. 5 (May 1, 2019): 676. http://dx.doi.org/10.3390/nano9050676.

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Ge-Sb-Te thin films were obtained by ns-, ps-, and fs-pulsed laser deposition (PLD) in various experimental conditions. The thickness of the samples was influenced by the Nd-YAG laser wavelength, fluence, target-to-substrate distance, and deposition time. The topography and chemical analysis results showed that the films deposited by ns-PLD revealed droplets on the surface together with a decreased Te concentration and Sb over-stoichiometry. Thin films with improved surface roughness and chemical compositions close to nominal values were deposited by ps- and fs-PLD. The X-ray diffraction and Raman spectroscopy results showed that the samples obtained with ns pulses were partially crystallized while the lower fluences used in ps- and fs-PLD led to amorphous depositions. The optical parameters of the ns-PLD samples were correlated to their structural properties.
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Venkatesan, T., X. D. Wu, R. Muenchausen, and A. Pique. "Pulsed Laser Deposition: Future Directions." MRS Bulletin 17, no. 2 (February 1992): 54–58. http://dx.doi.org/10.1557/s0883769400040628.

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Despite the discovery of the laser a few decades ago, the potential for pulsed laser deposition (PLD) of thin films has remained unexploited. Despite the sustained pioneering work at Rockwell in laser deposition, it took the development of high-temperature superconductors to fully realize the technique's potential. Early work on PLD of high-temperature superconductors demonstrated for the first time that the composition of rather complex multi-elementary materials can be reproduced in the deposited film under appropriate conditions of laser energy density and deposition angle. These features made PLD unique; and once the recipe for making in-situ crystalline films of proper stoichiometry was known, the technique's popularity was significantly enhanced in the research community.The features of laser deposition that make the process so unique, and that are discussed throughout this issue, are recapped below:1. Rather complex multi-elementary materials can be deposited well if a single-phase, homogeneous target can be fabricated. The complexity of the deposition process is translated to the relatively easier process of fabricating a high-quality target.2. The chamber pressure, target-substrate distance, target orientation with respect to the laser beam, etc. are significantly de-coupled, enabling significant freedom in deposition system design. The target is decoupled from the substrate in the sense that a small target can be used to deposit film over a fairly large area substrate with the appropriate scanning schemes.3. The efficiency of the target use is superior compared to any other technique since a predominant amount of the evaporated material is forward directed and can be collected with a high degree of efficiency. For example, in a production environment, more than 100 YBCO films (ranging 3,000-4,000 Å thick) on 1 × 1 cm2 substrates have been fabricated from a 0.25-inch-thick one-inch target with a majority of the target still left over. The cost of raw materials in a production environment may become significant, and for toxic elements particularly there is a further advantage in minimizing the spread of contaminants.
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Dissertations / Theses on the topic "Pulsed laser deposition (PLD)"

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Krogstad, Hedda Nordby. "Deposition of Thin Film Electrolyte by Pulsed Laser Deposition (PLD) for micro-SOFC Development." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for materialteknologi, 2012. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-19017.

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Optimalization of PLD deposition of YSZ for micr-SOFC electrolyte applications by varying deposition pressure and target-substrate distance.Substrate used was Si-based chips and wafers (large area PLD), and the substrate temperature was held at 600. Dense films were obtained at 20 mTorr.
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Jenderka, Marcus. "Pulsed Laser Deposition of Iridate and YBiO3 Thin Films." Doctoral thesis, Universitätsbibliothek Leipzig, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-219334.

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Die vorliegende Arbeit befasst sich mit dem Dünnfilmwachstum der ternären Oxide Na2IrO3, Li2IrO3, Y2Ir2O7 und YBiO3. All diesen oxidischen Materialien ist gemein, dass sie Verwirklichungen sogenannter Topologischer Isolatoren oder Spin-Flüssigkeiten sein könnten. Diese neuartigen Materiezustände versprechen eine zukünftige Anwendung in der Quantencomputation, in magnetischen Speichern und in elektrischen Geräten mit geringer Leistungsaufnahme. Die Herstellung der hier gezeigten Dünnfilme ist daher ein erster Schritt zur Umsetzung dieser Anwendungen in der Zukunft. Alle Dünnfilme werden mittels gepulster Laserplasmaabscheidung auf verschiedenen einkristallinen Substraten hergestellt. Die strukturellen, optischen und elektrischen Eigenschaften der Filme werden mittels etablierter experimenteller Verfahren wie Röntgenbeugung, spektroskopischer Ellipsometrie und elektrischenWiderstandsmessungen untersucht. Die strukturellen Eigenschaften von erstmalig in der Masterarbeit des Authors verwirklichten Na2IrO3-Dünnfilmen können durch Abscheidung einer ZnO-Zwischenschicht deutlich verbessert werden. Einkristalline Li2IrO3-Dünnfilme mit einer definierten Kristallausrichtung werden erstmalig hergestellt. Die Messung der dielektrischen Funktion gibt Einblick in elektronische Anregungen, die gut vergleichbar mit Li2IrO3-Einkristallen und verwandten Iridaten sind. Des Weiteren wird aus den Daten eine optische Energielücke von ungefähr 300 meV bestimmt. In Y2Ir2O7-Dünnfilmen wird eine mögliche (111)-Vorzugsorientierung in Wachstumsrichtung gefunden. Im Vergleich mit der chemischen Lösungsabscheidung zeigen die hier mittels gepulster Laserplasmaabscheidung hergestellten YBiO3-Dünnfilme eine definierte, biaxiale Kristallausrichtung in der Wachstumsebene bei einer deutlich höheren Schichtdicke. Über die gemessene dielektrische Funktion können eine direkte und indirekte Bandlücke bestimmt werden. Deren Größe gibt eine notwendige experimentelle Rückmeldung an theoretische Berechnungen der elektronischen Bandstruktur von YBiO3, welche zur Vorhersage der oben erwähnten, neuartigen Materiezuständen verwendet werden. Nach einer Einleitung und Motivation dieser Arbeit gibt das zweite Kapitel einen Überblick über den gegenwärtigen Forschungsstand der hier untersuchten Materialien. Die folgenden zwei Kapitel beschreiben die Probenherstellung und die verwendeten experimentellen Untersuchungsmethoden. Anschließend werden für jedes Material einzeln die experimentellen Ergebnisse dieser Arbeit diskutiert. Die Arbeit schließt mit einer Zusammenfassung und einem Ausblick
The present thesis reports on the thin film growth of ternary oxides Na2IrO3, Li2IrO3, Y2Ir2O7 and YBiO3. All of these oxides are candidate materials for the so-called topological insulator and spin liquid, respectively. These states of matter promise future application in quantum computation, and in magnetic memory and low-power electronic devices. The realization of the thin films presented here, thus represents a first step towards these future device applications. All thin films are prepared by means of pulsed laser deposition on various single-crystalline substrates. Their structural, optical and electronic properties are investigated with established experimental methods such as X-ray diffraction, spectroscopic ellipsometry and resistivity measurements. The structural properties of Na2IrO3 thin films, that were previously realized in the author’s M. Sc. thesis for the first time, are improved significantly by deposition of an intermediate ZnO layer. Single-crystalline Li2IrO3 thin films are grown for the first time and exhibit a defined crystal orientation. Measurement of the dielectric function gives insight into electronic excitations that compare well with single crystal samples and related iridates. From the data, an optical energy gap of about 300 meV is obtained. For Y2Ir2O7 thin films, a possible (111) out-of-plane preferential crystal orientation is obtained. Compared to chemical solution deposition, the pulsed laser-deposited YBiO3 thin films presented here exhibit a biaxial in-plane crystal orientation up to a significantly larger film thickness. From the measured dielectric function, a direct and indirect band gap energy is determined. Their magnitude provides necessary experimental feedback for theoretical calculations of the electronic structure of YBiO3, which are used in the prediction of the novel states of matter mentioned above. After the introduction and motivation of this thesis, the second chapter reviews the current state of the science of the studied thin film materials. The following two chapters introduce the sample preparation and the employed experimental methods, respectively. Subsequently, the experimental results of this thesis are discussed for each material individually. The thesis concludes with a summary and an outlook
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Kawwam, Mohammad. "Pulsed Laser Deposition and Structural Analysis of Crystalline CuO and GaN Thin Films." Thesis, Lyon 1, 2014. http://www.theses.fr/2014LYO10007.

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Cette thèse présente les résultats expérimentaux relatifs à l'étude des couches de GaN et de CuO déposées par la technique PLD (dépôt par laser à impulsions) sur des substrats de saphir, SrTiO3, quartz et MgO. Nous avons étudié les effets de plusieurs paramètres qui jouent sur la cristallisation et la morphologie des surfaces des films déposés, à savoir, la température du substrat, la pression au fond, la distance entre le substrat et la cible, la densité d'énergie du laser et la position du substrat. Les couches ont été caractérisées par XRD, microscopie à force atomique et Le microscope électronique à balayage, RHEED et RAMAN. Les résultats montrent que la rugosité et la qualité de la surface des films déposés par PLD dépendent de l'énergie cinétique de déposition des espèces chimiques. L'épaisseur du film, la cristallinité, l'homogénéité et la rugosité sont étroitement liés aux conditions de dépôt
The thesis presents experimental results related to the Pulsed Laser Deposition (PLD) of GaN and CuO thin films using sapphire, SrTiO3, quartz and MgO substrates. The evolution of crystallization and surface morphology of the as-deposited films were studied to investigate the influence of the process conditions such as: substrate heating, background pressure, target-substrate distance, laser energy density, and substrate location, which were systematically varied. The as-deposited films were characterized by X-ray diffraction, atomic force microscopy and scanning electron microscopy, X-ray photoelectron spectroscopy, RHEED and RAMAN techniques. The results convincingly demonstrate that the enhancement in film growth quality - the reduction in roughness and the delay of epitaxial breakdown - is related to the control of PLD species kinetics. The films thickness, crystallinity, homogeneity and surface roughness are strongly dependent on deposition conditions
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Farrell, Ian Laurence. "Growth of Metal-Nitride Thin Films by Pulsed Laser Deposition." Thesis, University of Canterbury. Physics and Astronomy, 2010. http://hdl.handle.net/10092/5011.

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The growth of thin-film metal nitride materials from elemental metal targets by plasma-assisted pulsed laser deposition (PLD) has been explored and analysed. A new UHV PLD growth system has been installed and assembled and its system elements were calibrated. A series of GaN thin films have been grown to calibrate the system. In-situ RHEED indicated that the films were single crystal and that growth proceeded in a three-dimensional fashion. SEM images showed heavy particulation of film surfaces that was not in evidence for later refractory metal nitride films. This may be connected to the fact that Ga targets were liquid while refractory metals were solid. Most GaN films were not continuous due to insufficient laser fluence. Continuous films did not exhibit photoluminescence. HfN films have been grown by PLD for the first time. Films grown have been shown to have high reflectivity in the visible region and low resistivity. These factors, along with their crystal structure, make them suitable candidates to be used as back-contacts in GaN LEDs and could also serve as buffer layers to enable the integration of GaN and Si technologies. Growth factors affecting the films’ final properties have been investigated. Nitrogen pressure, within the operating range of the plasma source, has been shown to have little effect on HfN films. Substrate temperature has been demonstrated to have more influence on the films’ properties, with 500 °C being established as optimum. ZrN films have also been grown by PLD. Early results indicated that they exhibit reflectivities 50 % ± 5 % lower than those of HfN. However, further growth and characterisation would be required in order to establish this as a fundamental property of ZrN as nitride targets were mostly used in ZrN production. Single-crystal epitaxial GdN and SmN films have been produced by PLD. This represents an improvement in the existing quality of GdN films reported in the literature, which are mostly polycrystalline. In the case of SmN, these are the first epitaxial films of this material to be grown. Film quality has been monitored in-situ by RHEED which has allowed growth to be tailored to produce ever-higher crystal quality. Post-growth analyses by collaborators was also of assistance in improving film growth. Substrate temperatures and nitrogen plasma parameters have been adjusted to find optimum values for each. In addition, laser fluence has been altered to minimise the presence of metal particulates in the films, which interfere with magnetic measurements carried out in analyses. Capping layers of Cr, YSZ or AlN have been deposited on the GdN and SmN prior to removal from vacuum to prevent their degradation upon exposure to atmospheric water vapour. The caps have been steadily improved over the course of this work, extending the lifetime of the nitride films in ambient. However, they remain volatile and this may persist since water vapour can enter the film at the edge regardless of capping quality. Optical transmission has shown an onset of absorption at 1.3 eV for GdN and 1.0 eV for SmN.
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Zhao, Yue. "Fabrication and characterization of superconducting PLD MgB2 thin films." Access electronically, 2005. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20060719.121046/index.html.

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Jiang, Ge. "Preparation and Characteristics of Bi0.5Na0.5TiO3 based Lead-Free thin films by Pulsed Laser Deposition." Thesis, KTH, Skolan för elektroteknik och datavetenskap (EECS), 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-247872.

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Lead-based piezoelectric materials, such as PbZrxTi1-xO3 (PZT), have attracted considerable attention and have been widely used in actuators, sensors and transducers due to their excellent electric properties. However, considering the toxicity of lead and its oxides, environmentally friendly lead-free piezoelectric materials are attracting more attention as potential replacements for PZT. Among them, Bi0.5Na0.5TiO3 (BNT)-based materials exhibit good electrical properties and electromechanical coupling response. In this work, the 0.97Bi0.5Na0.5TiO3-0.03BiAlO3 (BNTBA) thin films (~120 nm thickness) were successfully prepared using the pulsed laser deposition (PLD) method on Pt/TiO2/SiO2/Si substrates. The effects of substrate temperature, oxygen pressure, laser repetition rate, and post-annealing treatment were investigated. X-ray diffraction (XRD) and scanning electron microscope (SEM) are used to study the structure of the films and the ferroelectric and dielectric properties are measured. The results show that it is necessary to introduce excess sodium and bismuth to compensate for their evaporation in further thermal treatment. The values of remnant polarization increase from 8.7 μC/cm2 to 12.3 μC/cm2 with the introduction BiAlO3. The dielectric constant increases from 600-550 to 710-600 and the dielectric loss increases from 4.2% to 6.7% at higher frequency when the oxygen pressure increases from 20 Pa to 30 Pa.
Blybaserade piezoelektriska material, såsom PbZrxTi1-xO3 (PZT), har väckt stor uppmärksamhet och har använts i stor utsträckning på grund av deras utmärkta elektriska egenskaper. Men med tanke på toxiciteten hos bly och dess oxider lockar miljövänliga blyfria piezoelektriska material mer uppmärksamhet från forskare som potentiella utbyten för PZT. Bland dem uppvisar Bi0.5Na0.5TiO3 (BNT) -baserade material bra elektriska egenskaper och elektromekanisk kopplingssvar. I detta arbete framställdes 0,97Bi0.5Na0.5TiO3-0.03BiAlO3 (BNTBA) tunna filmer (~ 120 nm tjocklek) med användning av pulserad laseravsättningsmetod på Pt / TiO2 / SiO2 / Si-substrat. Effekterna av substrattemperatur, syretryck, laserrepetitionshastighet och efterglödande behandling undersöktes. Röntgendiffraktions (XRD) och skanningelektronmikroskop (SEM) används för att studera filmens struktur och de ferroelektriska och dielektriska egenskaperna mäts. Resultaten visar att det är nödvändigt att införa överskott av natrium och vismut för att kompensera för deras avdunstning vid vidare termisk behandling. Värdena för återstående polarisation ökar från 8,7 μC / cm2 till 12,3 μC / cm2 med introduktionen BiAlO3. Den dielektriska konstanten ökar från 600-550 till 710-600 och den dielektriska förlusten ökar från 4,2% till 6,7% vid högre frekvens när syretrycket ökar från 20 Pa till 30 Pa.
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Hardie, Graham Lyall. "Techniques for enhancing the PLD growth of superconducting YBCO thin films." Thesis, Stellenbosch : Stellenbosch University, 2014. http://hdl.handle.net/10019.1/96096.

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Thesis (MEng)--Stellenbosch University, 2014.
ENGLISH ABSTRACT: High Temperature Superconductors (HTS) exhibit exceptional electrical properties that make them attractive candidates for numerous electronic devices and applications. However, constructing working devices can be challenging due to fabrication difficulties of these brittle ceramics. This thesis investigates new methods to make the fabrication of high quality YBa2Cu3O7 (YBCO) thin films easier and compatible with more materials. We present the development of a universal add-on method that can be used in situ to improve the quality of superconducting thin films deposited by Pulsed Laser deposition (PLD). We investigate the in situ application of electric fields and voltage biasing to improve the thin film growth. Considering various electrode configurations, we have developed a final electrode design that is stable and produces reproducible results. By introducing an insulated high voltage (HV) electrode into the chamber during deposition, the quality of the deposited thin films can be modulated depending on the polarity of the voltage applied. Applying a positive voltage improves the film quality obtained. Applying a negative voltage degrades the superconducting properties of the films. A simple proof-of-concept HTS dual-mode microwave filter was designed, fabricated and tested. Only the filter produced using our novel PLD technique displayed the correct filtering action upon cooling to 77K. This is attributed to the thin films better superconducting properties due to our developed technique.
AFRIKAANSE OPSOMMING: Hoë Temperatuur Supergeleiers (HTS) vertoon aantreklike elektriese eienskappe wat hulle goeie kandidate maak vir verskeie elektroniese toepassings. Om werkende toestelle te ontwikkel kan 'n uitdaging wees, as gevolg van die vervaardigings probleme wat bestaan vir hierdie bros keramiek materiaal. Hierdie tesis ondersoek nuwe metodes om die vervaardiging van 'n hoë gehalte YBa2Cu3O7 (YBCO) dun films makliker en versoenbaar te maak met verskeie materiale. Ons toon die ontwikkeling van 'n algemene metode wat maklik bygevoeg kan word om in situ die gehalte van supergeleidende dun films, wat deur gepulseerde laser deponering (PLD) gedeponeer is, te verbeter. Ons ondersoek die in situ toepassing van elektriese velde en spannings om die dun film groei te verbeter. Verder oorweeg ons verskeie elektrode konfigurasies en ontwikkel 'n finale elektrode ontwerp wat stabiel is en herhaalbare resultate produseer. Die kwaliteit van die gedeponeerde dun films kan gemoduleer word deur die byvoeging van 'n geïsoleerde hoogspannings (HV) elektrode tydens deponering, afhangende van die polariteit van die aangelegde spanning. 'n Positiewe spanning verhoog die film kwaliteit, terwyl 'n negatiewe spanning die supergeleidende eienskappe van die films verlaag. 'n Eenvoudige HTS dubbele-modus mikrogolffilter is ontwerp, vervaardig en getoets, om as toepassings voorbeeld te dien. Slegs die filter wat geproduseer was met behulp van ons nuwe PLD tegniek, vertoon die beste filter oordrag by 77K. Dit word toegeskryf aan die beter supergeleidende eienskappe van die dun film, as gevolg van die toepassing van ons ontwikkelde tegniek.
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Wu, Yi Sun. "Fabrication of in-situ MgB₂ thin films on Al₂O₃ substrate using off-axis PLD technique." Access electronically, 2007. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20080917.103857/index.html.

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Stock, François. "Traitements laser UV de couches de carbone amorphe adamantin (DLC) obtenues par ablation laser pulsée (PLD) : application à la synthèse d'électrodes transparentes." Thesis, Strasbourg, 2019. http://www.theses.fr/2019STRAD035.

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L'un des grands défis que les technologies d'affichage (LCD, OLeds…), dispositifs optoélectroniques et photovoltaïques devront affronter dans le futur est de trouver une alternative à l'utilisation d’oxydes conducteurs transparents tel l’oxyde d’indium-étain (ITO). Le graphène, un matériau 2D conducteur et transparent à base de carbone apparait comme une alternative attractive à l’ITO. Cependant, son transfert sur grandes surfaces est complexe et délicat à mettre en œuvre. Dans cette étude, une fine couche mince de carbone adamantin (DLC : Diamond-Like Carbon) est déposée par ablation laser pulsée (PLD) sur des substrats transparents et isolants (quartz, verre…). Le DLC présente une bonne transmission dans le domaine visible et constitue un parfait isolant électrique. Il présente cependant un caractère partiellement opaque dans le domaine UV. De ce fait, un traitement laser UV permet une modification des liaisons atomiques des premières couches de sa surface et ainsi la synthèse de « graphène / graphite » sur quelques couches atomiques. Ce procédé novateur et original est basé uniquement sur des technologies lasers et offre l’avantage d’une compatibilité importante avec les procédés de la microélectronique classique
One of the biggest challenge that optoelectronic and photovoltaic devices will have to face is the necessity to provide a reliable alternative to transparent conducting oxide (TCO) and especially to Indium Thin Oxide (ITO) widely used in display technologies. This thesis presents an alternative solution based on laser processes and carbon materials only. In a first step, Diamond-Like Carbon (DLC) is grown with a pulsed laser deposition (PLD) process. DLC is an amorphous form of carbon sharing many properties with diamond like very high transparency in the visible range and being a perfect electrical insulator. Therefore, in a second step, DLC thin films are annealed with UV laser. These surface treatments lead to the modification of the first DLC atomic layers. With this step, dominating diamond bindings (sp3) responsible of insulating properties of DLC are broken and atoms will be reorganized in graphitic bindings (sp2) leading to surface conductivity appearance. Within only surface modifications (over a few atomic layers), the interesting property of transparency is conserved with an additional attractive surface conductivity. Obtained performances clearly approach and reach ITO values. This only laser-based process offers very interesting perspectives with keeping an important compatibility with standard microelectronics technical steps
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Saha, Sanjib. "Study Of Pulsed Laser Ablated Barium Strontium Titanate Thin Flims For Dynamic Random Access Memory Applications." Thesis, Indian Institute of Science, 2000. https://etd.iisc.ac.in/handle/2005/208.

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The present study describes the growth and characterization of pulsed laser ablated Bao.sSro.sTiOs (BST) thin films. Emphasis has been laid on the study of a plausible correlation between structure and property in order to optimize the processing parameters suitably for required application. An attempt has been made to understand the basic properties such as, origin of dielectric response, charge transfer under low and high-applied electric fields across the BST capacitor and finally the dielectric breakdown process. Chapter 1 gives a brief introduction on the application of ferroelectric thin films in microelectronic industry and its growth techniques. It also addresses the present issues involved in the introduction of BST as a capacitor material for high-density dynamic random access memories. Chapter 2 outlines the motivation for the present study and briefly outlines the research work involved. Chapter 3 describes the experimental procedure involved in the growth and characterization of BST thin films using pulsed laser ablation technique. Details include the setup design for PLD growth, material synthesis for the ceramic targets, deposition conditions used for thin film growth and basic characterizations methods used for study of the grown films. Chapter 4 describes the effect of systematic variation of deposition parameters on the physical and electrical properties of the grown BST films. The variation in processing conditions has been found to directly affect the film crystallinity, structure and morphology. The change observed in these physical properties may also be correlated to the observed electrical properties. This chapter summarizes the optimal deposition conditions required for growing BST thin films using a pulsed laser ablation technique. Microstructure of BST films has been categorized into two types: (a) Type I structure, with multi-grains through the film thickness, for amorphous as-grown films after high temperature annealing (exsitu crystallized), and (b) columnar structure (Type II) films, which were as-grown well-crystallized films, deposited at high temperatures. The ac electrical properties have been reviewed in detail in Chapter 5. Type I films showed a relatively lower value of dielectric constant (e ~ 426) than Type II films with dielectric constant around 567. The dissipation factors were around 0.02 and 0.01 for Type I and Type II films respectively. The dispersion in the frequency domain characteristics has been quantitatively explained using Jonscher's theory. Complex impedance spectroscopy employed showed significant grain boundary response in the case of multi-grained Type I films while negligible contribution from grain boundaries has been obtained in the case of columnar grained Type II BST films. The average relaxation time r obtained from the complex impedance plane plots show almost three orders higher values for Type I films. The obtained results suggest that in multi-grained samples, grain boundary play a major role in electrical properties. This has been explained in accordance to a model proposed on the basis of depleted grains in the case of Type I films where the grain sizes are smaller than the grain boundary depletion width. Chapter 6 describes the dc leakage properties of the grown BST thin films and the influence of microstructure on the leakage properties. It was evident from the analysis of the graph of leakage current against measurement temperature, that, the observed leakage behavior in BST films, can not be attributed to a single charge transport mechanism. For Type I films, the Arrhenius plot of the leakage current density with 1000/T exhibits different regions with activation energy values in the range of 0.5 and 2.73 for low fields (2.5kV/cm). The activation energy changes over to 1.28 eV at high fields (170 kV/cm). The obtained values agree well with that obtained from the ac measurements, thus implying a similarity in the origin of the transport process. The activation energy value in the range of 0.5 eV is attributed to the electrode/film Schottky barrier, while the value in the range of 2.73 eV is due to deep trap levels originating from Ti+3 centers. The value in the range of 1.28 eV has been attributed to oxygen vacancy motion. Similar results have been obtained from the Arrhenius plot of the leakage current for Type II films. In this case, only two different activation energy values can be identified in the measured temperature and applied electric field range. At low fields the activation energy value was around 0.38 eV while at high fields the value was around 1.06 eV. These values have been identified to be originating from the electrode/film Schottky barrier and oxygen vacancy motion respectively. Thus a complete picture of the charge transport process in the case of BST thin film may be summarized as comprising of both electronic motion as well as contribution from oxygen vacancy motion. The effect of electrical stress on the capacitance-voltage (C-V) and the leakage current has been analyzed in Chapter 7. From the change in the zero bias capacitance after repeated electron injection through the films the values of the electronic capture cross-section and the total trap density for Type I and II films have been estimated. The results showed higher values for Type I film in comparison to Type II films. The difference has been attributed to the presence of grain boundaries and a different interface in the case of Type I films when compared to Type II films where the absence of grain boundaries is reflected in the columnar microstructure. A study of the time-dependent-dielectric-breakdown (TDDB) characteristics under high fields for Type I and Type II films showed higher endurance for Type I film. On the other hand space-charge-transient characteristics have been observed in the case of Type II films at elevated temperature of measurement. Mobility and activation energy values extracted from the transient characteristics are found to be in the range of 1 x 10~12 cm2 /V-sec and 0.73 eV respectively, suggesting a very slow charge transport process, which has been attributed to the motion of oxygen vacancies. An overall effect of electrical stress suggested that oxygen vacancy motion can be related to the observed resistance degradation and TDDB, which has been further enhanced by the combination of high temperature and high electric fields. Chapter 8 deals with the effect of intentional doping in the BST films. The doping includes Al at the Ti-site, Nb in the Ti-site and La at the Ba/Sr-site. The effect of doping was observed both on the structure and electrical properties of the BST films. Acceptor doping of 0.1 atomic 7c Al was found to decrease the dielectric constant as well as the leakage current. For higher concentration of acceptor-dopant, the leakage current was found to increase while showing space-charge-transient in the TDDB characteristics, again suggesting the effect of increased concentration of oxygen vacancies. Donor doping using 2 atomic % La and Xb significantly improved the leakage as well as the TDDB characteristics by reducing the concentration of oxygen vacancies. A further procedure using graded donor doping in the BST films exhibits even better leakage and TDDB properties. An unconventional, graded doping of donor cations has been carried out to observe the impact on leakage behavior, in particular. The leakage current measured for a graded La-doped BST film show almost six orders of lower leakage current in comparison to undoped BST films, while endurance towards breakdown has been observed to increase many-fold. Chapter 9 highlights the main findings of the work reported in this thesis and lists suggestions for future work, to explore new vistas ahead.
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Books on the topic "Pulsed laser deposition (PLD)"

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Eason, Robert, ed. Pulsed Laser Deposition of Thin Films. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2006. http://dx.doi.org/10.1002/0470052120.

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B, Chrisey Douglas, and Hubler G. K, eds. Pulsed laser deposition of thin films. New York: J. Wiley, 1994.

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Eason, Robert. Pulsed Laser Deposition of Thin Films. New York: John Wiley & Sons, Ltd., 2006.

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Recker, Stephanie J. Pulsed laser deposition of YBa2Cu3O7-[delta]/PrBa2Cu3O7-[delta]. St. Catharines, Ont: Brock University, Dept. of Physics, 1998.

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United States. National Aeronautics and Space Administration., ed. Soft X-ray optics by pulsed laser deposition: Final report. [Washington, DC: National Aeronautics and Space Administration, 1996.

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United States. National Aeronautics and Space Administration., ed. Soft X-ray optics by pulsed laser deposition: Final report. [Washington, DC: National Aeronautics and Space Administration, 1996.

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United States. National Aeronautics and Space Administration., ed. Soft X-ray optics by pulsed laser deposition: Final report. [Washington, DC: National Aeronautics and Space Administration, 1996.

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Jackson, Brian Douglas. Pulsed-laser deposition of silicon dioxide thin-films using the molecular fluorine laser. Ottawa: National Library of Canada = Bibliothèque nationale du Canada, 1999.

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Pulsed laser deposition of thin films: Applications-led growth of functional materials. Hoboken, N.J: Wiley-Interscience, 2007.

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Yazdanian, Mohammad Mehdi. Preparation of SrMgx-Ru1-xO3 thin films by pulsed laser deposition. St. Catharines, Ont: Brock University, Dept. of Physics, 2004.

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Book chapters on the topic "Pulsed laser deposition (PLD)"

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Winter, Patrick M., Gregory M. Lanza, Samuel A. Wickline, Marc Madou, Chunlei Wang, Parag B. Deotare, Marko Loncar, et al. "Pulsed-Laser Deposition (PLD)." In Encyclopedia of Nanotechnology, 2186. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_100689.

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Rijnders, Guus, and Dave H. A. Blank. "In Situ Diagnostics by High-Pressure RHEED During PLD." In Pulsed Laser Deposition of Thin Films, 85–97. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2006. http://dx.doi.org/10.1002/9780470052129.ch4.

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Gorbunoff, Andreé. "Cross-Beam PLD: Metastable Film Structures from Intersecting Plumes." In Pulsed Laser Deposition of Thin Films, 131–60. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2006. http://dx.doi.org/10.1002/9780470052129.ch6.

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Krebs, Hans-Ulrich, Martin Weisheit, Jörg Faupel, Erik Süske, Thorsten Scharf, Christian Fuhse, Michael Störmer, et al. "Pulsed Laser Deposition (PLD) -- A Versatile Thin Film Technique." In Advances in Solid State Physics, 505–18. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-540-44838-9_36.

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Beltrano, Joseph J., Lorenzo Torrisi, Anna Maria Visco, Nino Campo, and E. Rapisarda. "Pulsed Laser Deposition (PLD) Technique to Prepare Biocompatible Thin Films." In Advances in Science and Technology, 56–61. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/3-908158-05-2.56.

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Leedy, Kevin D. "Pulsed Laser Deposition 1." In Gallium Oxide, 257–71. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-37153-1_14.

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von Wenckstern, Holger, Daniel Splith, and Marius Grundmann. "Pulsed Laser Deposition 2." In Gallium Oxide, 273–91. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-37153-1_15.

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Takeuchi, Ichiro. "Combinatorial Pulsed Laser Deposition." In Pulsed Laser Deposition of Thin Films, 161–76. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2006. http://dx.doi.org/10.1002/9780470052129.ch7.

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Mihailescu, I. N., and E. György. "Pulsed Laser Deposition: An Overview." In Springer Series in OPTICAL SCIENCES, 201–14. Berlin, Heidelberg: Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-540-48886-6_13.

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Krebs, Hans-Ulrich. "Pulsed Laser Deposition of Metals." In Pulsed Laser Deposition of Thin Films, 363–82. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2006. http://dx.doi.org/10.1002/9780470052129.ch16.

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Conference papers on the topic "Pulsed laser deposition (PLD)"

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Rode, Andrei V., Barry Luther-Davies, and Eugene G. Gamaly. "Laser Ablation of Carbon with High-Pulse-Rate Nanosecond and Picosecond Lasers." In The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1998. http://dx.doi.org/10.1364/cleo_europe.1998.cmf2.

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We discuss and demonstrate a novel technique for the deposition of high quality thin films via pulsed laser deposition (PLD) using high repetition rate (up to several tens of MHz) picosecond or nanosecond laser pulses. Differences between this method and conventional PLD arise because the pulse energy is markedly reduced compared with the conventional high-energy low repetition rate lasers used for PLD and this significantly improves the quality of the films due to the large decrease (up to nine orders of magnitude) in the number of particles evaporated during a single laser pulse. This effectively eliminates the major disadvantage of PLD which is the formation of particulates in the film.
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O'Donnell, K. P., P. G. Middleton, C. Trager-Cowan, D. Cole, M. Cazzanelli, and J. G. Lunney. "Pulsed laser deposited (PLD) GaN and its powder precursor." In The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1998. http://dx.doi.org/10.1364/cleo_europe.1998.cthk2.

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Pulsed laser deposition offers a fast and convenient route for preparing crystalline GaN thin films that may be used either directly in devices or as substrates for conventional growth. 3 Jcm-2 pulses from an excimer laser impinge upon a rotating compressed powder target immersed in a nitrogen or ammonia atmosphere. The resulting ablated plume of material sublimes on a heated sapphire substrate to form the PLD layer. We report here a comparitive study of PLD films and their powder precursor by low temperature photoluminescence (PL) spectroscopy and cathodoluminescence (CL) imaging.
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Plociennik, Przemyslaw, Anna Zawadzka, Janusz Strzelecki, Zbigniew Lukasiak, and Andrzej Korcala. "Pulsed laser deposition (PLD) of hafnium oxide thin films." In 2014 16th International Conference on Transparent Optical Networks (ICTON). IEEE, 2014. http://dx.doi.org/10.1109/icton.2014.6876620.

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Fialkova, Svitlana, Sergey Yarmolenko, Jagannathan Sankar, Geoffrey Ndungu, and Kevin Wilkinson. "Bioactive Coating From White Portland Cement Deposited by Pulsed Laser Deposition." In ASME 2017 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/imece2017-70986.

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Objective. We report the study of feasibility to produce the thing bioactive coating from experimental dental cement using pulsed laser deposition (PLD) technique. Methods. The targets for PLD system (disks 30 mm in diameter × 5 mm thick) were sintered from micronized powder of set Alborg White Portland cement (WPC). The parameters for sintering process were chosen based thermo-gravimetric analysis and differential scanning calorimetry (TGA/DSC). The coatings were deposited by PLD on silicon substrates. The effect of laser power on coating crystallinity and morphology was evaluated by scanning electron microscope (SEM) and X-ray diffraction (XRD). The material transfer from target to substrate were evaluated by X-ray fluorescence (XRF) and X-ray energy dispersive spectroscopy (EDS). The bioactivity of deposited films was evaluated by ability produce the hydroxyapatite (HA) layer on a surface of specimen immersed in a simulated body fluid (Dulbecco’s Phosphate-Buffered Saline (DPBS). The formation of hydroxyapatite was confirmed by SEM, X-ray energy dispersive spectroscopy (EDS), XRD and micro-Raman spectroscopy. The formation of HA was evaluated after 1, 3, 7, 14, and 21 days of immersion. Results. This study demonstrated that White Portland cement can be used as a target material for manufacturing of bio-functional coatings. The films deposited on Si substrates have mainly amorphous structure; the crystallinity of the film can be achieved by increasing the laser power. The biological performance of deposited films was tested by HA forming ability in simulated body fluid. The HA layer was formed on a coated surface after first day of immersion.
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NAEEMA, Nadia, Hanaa E. JASIM, and Ahmed Shaker HUSSEIN. "EFFECT OF LASER SHOTS ON THE OPTICAL PROPERTIES OF FE2O3: CUO THIN FILMS PREPARED BY PULSE LASER DEPOSITION TECHNIQUE." In III.International Scientific Congress of Pure,Appliedand Technological Sciences. Rimar Academy, 2021. http://dx.doi.org/10.47832/minarcongress3-10.

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CuO-doped Fe2O3 thin films were deposited onto glass substrates using the Pulsed Laser Deposition (PLD) process at room temperature and a vacuum of 10-2 mbar, utilizing a Nd:YAG laser with a wavelength of 1064 nm, an average frequency of 6 Hz, and a pulse duration of 10 at various laser pulses (300,400 and 500 and).The effect of number of pulsed laser shots on the optical properties of the films was invesigated. UV-VIS spectrophotometer mentioned that the transmittance increases to 90 % when decresing the number of the laser shots. Furthermore, The optical measurements indicate that the Fe2O3:CuO films have a direct Egopt that diminishes as the number of laser pulses increases. The band gap energy of the Fe2O3:CuO found was 3.01 eV. This value was reduced significantly to 3.0 by increasing the number of laser blasts. However, optical constants such as the refractive index (n), the extinction coefficient (k), and the dielectric constant (r, I rise in a predictable manner as the number of laser flashes increases. Key words: CuO –doped Fe2O3; PLD technique ; Thin Film; Optical Properties; Band Gap.
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Haywood, Talisha M., Kwadwo M. Darkwa, Ram K. Gupta, and Dhananjay Kumar. "Pulsed Laser Deposition and Biocompatibility of Titanium Nitride Coatings." In ASME 2012 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/imece2012-86330.

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TiN thin films were deposited on pure titanium (99.9 %) and stainless steel (316L) substrates using the pulsed laser deposition (PLD) technique. PLD is a very versatile technique to deposit high quality films and it allows the stoichiometry transfer of a multi-component system from target to deposited film. The crystallographic orientation of the films was studied using the X-ray diffraction technique and the results showed that the films were polycrystalline with the (111) preferred orientation. The hydrophilic/hydrophobicity nature of the films was investigated using contact angle measurements and the results indicated that the TiN coated surfaces were hydrophilic (< 90°). Biocompatibility of the TiN thin films was characterized in terms of cell attachment of bone cells on the surfaces of the coatings. Human bone marrow stromal cells were cultured, seeded, stained and imaged using a fluorescent microscope. Results on the biological behavior of the TiN thin films suggest that TiN is a good biocompatible material and has great promises in biological applications.
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Belouet, C. "Pulsed laser deposition of high-Tc superconducting thin films for device applications." In The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/cleo_europe.1994.cmg1.

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Pulsed laser assisted deposition (PLD) has recently emerged as a most promising film-growth technique, at least for basic research, as this has been best demonstrated for the case of superconducting compounds and YBa2Cu3O7–8 in particular. The field of applications of the PLD technique has rapidly spread, and to date, it already covers a broad spectrum of materials. One may anticipate that the PLD technique will soon give birth to a most competitive film-growth technology, in particular in the field of electronics, where it creates new opportunities.
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Sheng, Biqing, and Zhaoyan Zhang. "Experimental Investigation of Pulsed Laser Deposition Based on a Compressible Flow Framework." In ASME 2006 International Mechanical Engineering Congress and Exposition. ASMEDC, 2006. http://dx.doi.org/10.1115/imece2006-14219.

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Pulsed laser deposition (PLD) is a popular technique for creating thin films. The film characteristics are directly related to the kinetic energy of the laser-induced plume. According to the theory of transient shock wave expansion during laser ablation, laser-induced plume properties are strongly affected by laser intensity as well as ambient temperature, pressure, and gas species. This theory leads to the development of PLD strategies to properly optimize the PLD parameters. The experiments were carried out to deposit diamond-like carbon (DLC) thin films under different ambient temperature, pressure and gas species. The deposited DLC thin films were characterized by Raman spectroscopy. Experimental results showed that the thin film quality can be improved by decreasing the ambient temperature, increasing the ambient pressure and using ambient gases with low molecular weight. Experimental results agree well with the theoretical prediction.
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Zergioti, I., C. Fotakis, and G. N. Haidemenopoulos. "Nanocrystalline Growth of Hard Coatings by Pulsed Laser Deposition." In The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1998. http://dx.doi.org/10.1364/cleo_europe.1998.cthh89.

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The main objective of this research work was the growth of Titanium Carbide and Titanium Diboride hard coatings on tool steels with Pulsed Laser Deposition (PLD) in order to improve their surface mechanical properties. A pulsed KrF excimer laser was used with the deposition chamber at a base pressure of 10−6 mbar. The morphology and the microstructure of the coatings were examined using Scanning Electron Microscopy, X Ray Diffraction and Transmission Electron Microscopy.
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Husmann, A., M. Aden, E. W. Kreutz, and R. Poprawe. "Material removal in pulsed laser deposition (PLD) with Q-switch CO2-lasers." In ICALEO® ‘97: Proceedings of the Laser Materials Processing Conference. Laser Institute of America, 1997. http://dx.doi.org/10.2351/1.5059706.

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Reports on the topic "Pulsed laser deposition (PLD)"

1

Laube, Samuel J., and Jeffery J. Heyob. Magnetron Sputtered Pulsed Laser Deposition Scale Up. Fort Belvoir, VA: Defense Technical Information Center, August 2003. http://dx.doi.org/10.21236/ada422887.

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Rubin, M., S. J. Wen, T. Richardson, J. Kerr, K. von Rottkay, and J. Slack. Electrochromic lithium nickel oxide by pulsed laser deposition and sputtering. Office of Scientific and Technical Information (OSTI), September 1996. http://dx.doi.org/10.2172/446407.

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Hamblen, David G., David B. Fenner, Peter A. Rosenthal, Joseph Cosgrove, and Pang-Jen Kung. Epitaxial Growth of High Quality SiC of Pulsed Laser Deposition. Fort Belvoir, VA: Defense Technical Information Center, February 1995. http://dx.doi.org/10.21236/ada360082.

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Peter Pronko. Isotopically Enriched Films and Nanostructures by Ultrafast Pulsed Laser Deposition. Office of Scientific and Technical Information (OSTI), December 2004. http://dx.doi.org/10.2172/835030.

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Fernandez, Felix E. Pulsed Laser Deposition of Thin Film Material for Nonlinear Waveguides. Fort Belvoir, VA: Defense Technical Information Center, October 1994. http://dx.doi.org/10.21236/ada290789.

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Britson, Jason Curtis. Pulsed laser deposition of AlMgB14 thin films. Office of Scientific and Technical Information (OSTI), November 2008. http://dx.doi.org/10.2172/964388.

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Siegal, M. P., D. R. Tallant, J. C. Barbour, P. N. Provencio, L. J. Martinez-Miranda, and N. J. DiNardo. Characterization of amorphous carbon films grown by pulsed-laser deposition. Office of Scientific and Technical Information (OSTI), September 1998. http://dx.doi.org/10.2172/658461.

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Kolagani, R., and S. Friedrich. Heteroepitaxial Growth of NSMO on Silicon by Pulsed Laser Deposition. Office of Scientific and Technical Information (OSTI), June 2008. http://dx.doi.org/10.2172/945832.

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Norton, D. P., B. C. Chakoumakos, D. H. Lowndes, and J. D. Budai. Formation of artificially-layered thin-film compounds using pulsed-laser deposition. Office of Scientific and Technical Information (OSTI), April 1995. http://dx.doi.org/10.2172/102249.

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Cook, L. P., P. K. Schenck, C. K. Chiang, M. D. Vaudinl, and W. Wong-Ng. Ferroelectric thin films prepared by pulsed laser deposition processing and characterization. Gaithersburg, MD: National Institute of Standards and Technology, 1992. http://dx.doi.org/10.6028/nist.ir.4844.

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