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Journal articles on the topic 'Quantum dots Molecules Electronic structure'

Author: Grafiati

Published: 4 June 2021

Last updated: 10 February 2022

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1

WANG, LI-MIN, YING LUO, and BEN-KUN MA. "EFFECTS OF ELECTRIC FIELD ON THE ELECTRONIC STRUCTURE OF QUANTUM DOTS." International Journal of Modern Physics B 16, no. 19 (2002): 2791–806. http://dx.doi.org/10.1142/s0217979202011500.

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Within the framwork of the effective mass approximation, the electronic structures of quantum dots in the presence of electric field are investigated by the finite element method. Numerical calculation results show that, with finite confining potential, the highest electronic bound state in the quantum dots gradually changes into a quasi-bound state as the electric field strength increases. For the quantum-dot molecules, the valence bonds between quantum dots alternates between the covalent bonds and ionic bonds with increasing electric field strength. The oscillator strength of intraband tran

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2

Zunger, Alex. "Semiconductor Quantum Dots." MRS Bulletin 23, no. 2 (1998): 15–17. http://dx.doi.org/10.1557/s0883769400031213.

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Semiconductor “quantum dots” refer to nanometer-sized, giant (103–105 atoms) molecules made from ordinary inorganic semiconductor materials such as Si, InP, CdSe, etc. They are larger than the traditional “molecular clusters” (~1 nanometer containing ≤100 atoms) common in chemistry yet smaller than the structures of the order of a micron, manufactured by current electronic-industry lithographic techniques. Quantum dots can be made by colloidal chemistry techniques (see the articles by Alivisatos and by Nozik and Mićić in this issue), by controlled coarsening during epitaxial growth (see the ar

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3

Blachowicz, Tomasz, and Andrea Ehrmann. "Recent Developments of Solar Cells from PbS Colloidal Quantum Dots." Applied Sciences 10, no. 5 (2020): 1743. http://dx.doi.org/10.3390/app10051743.

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PbS (lead sulfide) colloidal quantum dots consist of crystallites with diameters in the nanometer range with organic molecules on their surfaces, partly with additional metal complexes as ligands. These surface molecules are responsible for solubility and prevent aggregation, but the interface between semiconductor quantum dots and ligands also influences the electronic structure. PbS quantum dots are especially interesting for optoelectronic applications and spectroscopic techniques, including photoluminescence, photodiodes and solar cells. Here we concentrate on the latter, giving an overvie

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Dey, Debarati, Pradipta Roy, and Debashis De. "Design and Electronic Characterization of Bio-Molecular QCA: A First Principle Approach." Journal of Nano Research 49 (September 2017): 202–14. http://dx.doi.org/10.4028/www.scientific.net/jnanor.49.202.

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Molecular Quantum-dot Cellular Automata is the most promising and challenging technology nowadays for its high operating frequency, extremely high device density and non-cryogenic working temperature. In this paper, we report a First Principle approach based on analytical model of 3-dot Bio Molecular Quantum-dot Cellular Automata. The device is 19.62Å long and this bio molecular Quantum dot Cell has been made with two Adenine Nucleotide bio-molecules along with one Carbazole and one Thiol group. This whole molecular structure is supported onto Gold substrate. In this paper, two Adenine Nucleot

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Yamagiwa, M., N. Sumita, F. Minami, and N. Koguchi. "Confined electronic structure in GaAs quantum dots." Journal of Luminescence 108, no. 1-4 (2004): 379–83. http://dx.doi.org/10.1016/j.jlumin.2004.01.080.

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6

CHEN, L. J., P. Y. SU, J. M. LIANG, J. C. HU, W. W. WU, and S. L. CHENG. "SELF-ASSEMBLED METAL QUANTUM DOTS." International Journal of Nanoscience 03, no. 06 (2004): 877–89. http://dx.doi.org/10.1142/s0219581x04002784.

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Long-range order of uniform in size and regular in shape 2D arrays of Au@TOAB-DT nanoparticles (4.9 nm) were formed by a displacement reaction of the outer-shells from tetraoctylammonium bromide (TOAB) to dodecanethiol (DT) molecules at room temperature. The displacement reaction has utilized both superior size and shape control of Au@TOAB nanoparticles and uniform dispersion capability of Au@DT nanoparticles to achieve an extraordinarily large in extent (3 μ m × 3 μ m ) regular nanoparticle lattice structure. Self-assembled NiSi quantum dot arrays have been grown on relaxed epitaxial Si 0.7 G

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7

Saarikoski, H., M. J. Puska, and R. M. Nieminen. "Electronic structure calculations for 2-D quantum dots and laterally coupled quantum dot molecules in magnetic fields." International Journal of Quantum Chemistry 91, no. 3 (2002): 490–97. http://dx.doi.org/10.1002/qua.10433.

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8

Domenikou, Natalia, Ioannis Thanopulos, Vassilios Yannopapas, and Emmanuel Paspalakis. "Nonlinear Optical Rectification in a Polar Molecule-Plasmonic Nanoparticle Structure." Materials Proceedings 4, no. 1 (2020): 8. http://dx.doi.org/10.3390/iocn2020-07873.

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The study of nonlinear optical properties of quantum systems, such as quantum dots and molecules, near plasmonic nanostructures, has attracted significant interest in the past decade. Several nonlinear phenomena have been studied in quantum systems next to plasmonic nanostructures, such as second and third harmonic generations, Kerr nonlinearity, four-wave mixing, optical bistability, and nonlinear optical rectification. The latter occurs in asymmetric quantum systems and it can be strongly influenced, enhanced, or suppressed, depending on the particular plasmonic nanostructure used. In this w

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9

STROSCIO, MICHAEL A., and MITRA DUTTA. "BIOLOGICALLY-INSPIRED CHEMICALLY-DIRECTED SELF-ASSEMBLY OF SEMICONDUCTOR QUANTUM-DOT-BASED SYSTEMS: PHONON-HOLE SCATTERING IN DNA BOUND TO DNA-QUANTUM-DOT COMPLEXES." International Journal of High Speed Electronics and Systems 16, no. 02 (2006): 659–68. http://dx.doi.org/10.1142/s0129156406003916.

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This paper focuses on: (a) the concept and use of chemically-directed assembly to integrate nanoscale quantum dots at densities above 1017 cm-3 with biomolecular interconnecting structures; and (b) the phenomena of phonon absorption and emission from holes propagating in DNA molecules that are bond on one terminus to semiconductor quantum dots.

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10

LIU, YUMIN, ZIHUAN XU, ZHONGYUAN YU, et al. "STRAIN DISTRIBUTION AND ELECTRONIC STRUCTURE OF SELF-ORGANIZED InAs/GaAs QUANTUM DOTS." Journal of Nonlinear Optical Physics & Materials 18, no. 04 (2009): 553–60. http://dx.doi.org/10.1142/s0218863509004816.

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This paper presents a finite element method for calculating the strain distribution, piezoelectric effects and their influences on the electronic structure of self-organized InAs/GaAs quantum dots. The models used for strain calculations are based on the continuum elastic theory, which is capable of treating the quantum dot of arbitrary shapes. A truncated pyramid shaped quantum dot model including the wetting layer is adopted in this work. The electronic energy levels of the InAs/GaAs systems are calculated by solving the three-dimension effective mass Schrödinger equation including the influ

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11

Walczak, Kamil. "Coulomb blockade in molecular quantum dots." Open Physics 4, no. 1 (2006): 8–19. http://dx.doi.org/10.1007/s11534-005-0002-x.

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AbstractThe rate-equation approach is used to describe sequential tunneling through a molecular junction in the Coulomb blockade regime. Such device is composed of molecular quantum dot (with discrete energy levels) coupled with two metallic electrodes via potential barriers. Based on this model, we calculate nonlinear transport characteristics (conductance-voltage and current-voltage dependences) and compare them with the results obtained within a self-consistent field approach. It is shown that the shape of transport characteristics is determined by the combined effect of the electronic stru

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12

Sée, J., P. Dollfus, S. Galdin-Retailleau, and P. Hesto. "Coulomb Blockade in Silicon Devices: Electronic Structure of Quantum Dots." Journal of Computational Electronics 2, no. 2-4 (2003): 449–53. http://dx.doi.org/10.1023/b:jcel.0000011469.24091.ca.

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13

Gao, Zhi Ke, Chong Wang, Yu Yang, Jie Yang, and Li Qiao Chen. "The External Crystal Structure and Electronic Structure are Simulated about Ge_0.6Si_0.4 Quantum Dots." Materials Science Forum 852 (April 2016): 329–35. http://dx.doi.org/10.4028/www.scientific.net/msf.852.329.

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The alloy Ge0.6Si0.4 quantum dots were studied by using density functional theory. The change of the electronic structure of each crystal which grown in different simulation temperature condition were investigated by molecular dynamics simulation method. The results indicate that quantum dots of silicon germanium alloy occupy the narrow band gap of each crystal face from low to high temperature conditions. Since the atomic density and crystal configuration is different, the band gap values are relatively different. The mechanism of dielectric constant transition is well explained based on the

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14

Gerlovin, I. Ya, I. V. Ignatĭev, I. A. Yugova, and Y. Masumoto. "Quantum beats of fine-structure states in InP quantum dots." Optics and Spectroscopy 104, no. 4 (2008): 577–87. http://dx.doi.org/10.1134/s0030400x08040152.

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15

Anisimovas, E., M. B. Tavernier, and F. M. Peeters. "Vortex structure of few-electron quantum dots." Physica E: Low-dimensional Systems and Nanostructures 40, no. 5 (2008): 1621–23. http://dx.doi.org/10.1016/j.physe.2007.10.031.

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16

Poletaeva, Olga Yu, Alexandr Yu Leontev, Galina Yu Kolchina, Elbay R. Babayev, Eldar M. Movsumzade, and Ilnur I. Khasanov. "GEOMETRIC AND ELECTRONIC STRUCTURE OF HEAVY HIGHLY VISCOUS OIL COMPONENTS." IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA KHIMICHESKAYA TEKHNOLOGIYA 62, no. 9 (2019): 40–45. http://dx.doi.org/10.6060/ivkkt.20196209.6022.

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Physical-chemical and structural-rheological properties of the oil disperse system are determined by the structure, size and composition of the complex structures resulting from the association of paraffins and tarry asphaltene components. Therefore, data about hydrocarbon composition, especially the structure of paraffins, tars and asphaltenes, required to choose recovery method in the extraction, field treatment, transportation and processing of heavy oils. In article parameters of the geometric and electronic structure of the tars and asphaltenes model molecules to determine reactivity inde

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17

Delaney, P., and J. C. Greer. "Classical computation with quantum systems." Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 462, no. 2065 (2005): 117–35. http://dx.doi.org/10.1098/rspa.2005.1565.

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As semiconductor electronic devices scale to the nanometer range and quantum structures (molecules, fullerenes, quantum dots, nanotubes) are investigated for use in information processing and storage, it becomes useful to explore the limits imposed by quantum mechanics on classical computing. To formulate the problem of a quantum mechanical description of classical computing, electronic device and logic gates are described as quantum sub-systems with inputs treated as boundary conditions, outputs expressed as operator expectation values, and transfer characteristics and logic operations expres

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18

Надточий, А. М., С. А. Минтаиров, Н. А. Калюжный та ін. "Фотолюминесценция с временным разрешением наноструктур InGaAs различной квантовой размерности". Физика и техника полупроводников 53, № 11 (2019): 1520. http://dx.doi.org/10.21883/ftp.2019.11.48448.9167.

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By using time-correlated single-photon counting time-resolved photoluminescence of quantum-sized heterostructures of different dimensionality was investigated. InGaAs quantum dots, quantum well, and transitionally-dimensional structure — quantum well-dots were grown on GaAs substrates. It was observed, that photoluminescence decay strongly depends on structure dimensionality resulting in decay value of 6,7, and more than 20 ns for quantum dots, well-dots and well, respectively. As we believe localization centers in heterostructures may be responsible for such shortening of photoluminescence li

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19

LIU, YUMIN, WENJUAN LU, ZHONGYUAN YU, et al. "THE STRAIN FIELD DISTRIBUTION OF QUANTUM DOT ARRAY WITH CONICAL SHAPE." Journal of Nonlinear Optical Physics & Materials 18, no. 04 (2009): 561–71. http://dx.doi.org/10.1142/s021886350900483x.

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A systematic investigation is given about the effects of the longitudinal and transverse periodic distributions on the elastic strain field. The results show that the influences of the longitudinal and transverse period on the strain field are just opposite, especially for the path along the center-axis of the quantum dots. In the proper conditions, the influence of periodicity on strain field distribution can be partly eliminated. The results demonstrate that when calculating the effect of the strain field on the electronic structure, one must take the quantum dots periodic distribution into

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20

Mintairov, A. M., J. L. Merz, J. Kapaldo, A. S. Vlasov, and S. A. Blundell. "Wigner localization and whispering gallery modes of electrons in quantum dots." Физика и техника полупроводников 52, no. 4 (2018): 478. http://dx.doi.org/10.21883/ftp.2018.04.45827.16.

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AbstractWe used a low temperature near-field scanning optical microscopy (NSOM) to study a formation of Wigner molecules (WMs) in the emission spectra of self-organized InP/GaInP QDs having up to seven electrons. We used a Schottky diode structure for the electrostatic control of the number of the electrons ( N ) in QD, and we observed the emission of the charged excitons (for N < 3) and of the WMs (for N > 2) in the regime of weak Wigner localization. We show, that a contribution of whispering gallery modes (WGMs) of the electrons and rearrangement of the electrons between the WM and WG

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21

Skolnick, M. S., I. E. Itskevich, P. W. Fry, et al. "Electronic structure of InAs–GaAs self-assembled quantum dots studied by perturbation spectroscopy." Physica E: Low-dimensional Systems and Nanostructures 6, no. 1-4 (2000): 348–57. http://dx.doi.org/10.1016/s1386-9477(99)00170-8.

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22

Partoens, B., and F. M. Peeters. "The spin structure of two vertically coupled quantum dots." Physica E: Low-dimensional Systems and Nanostructures 6, no. 1-4 (2000): 577–80. http://dx.doi.org/10.1016/s1386-9477(99)00114-9.

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23

Kiravittaya, S., M. Benyoucef, R. Zapf-Gottwick, A. Rastelli, and O. G. Schmidt. "Optical fine structure of single ordered GaAs quantum dots." Physica E: Low-dimensional Systems and Nanostructures 40, no. 6 (2008): 1909–12. http://dx.doi.org/10.1016/j.physe.2007.09.012.

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24

Lenz, A., H. Eisele, R. Timm, et al. "Structure of InAs quantum dots-in-a-well nanostructures." Physica E: Low-dimensional Systems and Nanostructures 40, no. 6 (2008): 1988–90. http://dx.doi.org/10.1016/j.physe.2007.09.041.

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25

Chithrani, D., M. Korkusinski, S. J. Cheng, et al. "Electronic structure of the p-shell in single, site-selected InAs/InP quantum dots." Physica E: Low-dimensional Systems and Nanostructures 26, no. 1-4 (2005): 322–26. http://dx.doi.org/10.1016/j.physe.2004.08.088.

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26

Yang, Ying-li, Zeng-guang Liu, Guo-dong Wang, Ying Wang, Qing Yuan, and Guang-sheng Fu. "Photoluminescence study of the In0.3Ga0.7As surface quantum dots coupling structure." Optoelectronics Letters 17, no. 5 (2021): 302–7. http://dx.doi.org/10.1007/s11801-021-0108-4.

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27

Luo, Ji, Zhong Qin Yang, Zeng Quan Xue, Wei Min Liu, and Jin Lei Wu. "Near homogeneous variation of potentials in large systems and the electronic structure of molecular quantum dots." Journal of Chemical Physics 125, no. 9 (2006): 094702. http://dx.doi.org/10.1063/1.2345059.

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28

Деребезов, И. А., В. А. Гайслер, А. В. Гайслер та ін. "Спектроскопия одиночных AlInAs- и (111)InGaAs-квантовых точек". Физика и техника полупроводников 52, № 11 (2018): 1326. http://dx.doi.org/10.21883/ftp.2018.11.46593.15.

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AbstractA system of AlInAs- and InGaAs(111)-based quantum dots is studied. The use of wide-gap Al_ x In_1 –_ x As alloys as a basis for quantum dots provides a means for substantially extending the spectral region of emission to shorter wavelengths, including the region close to 770 nm which is of interest for the engineering of aerospace systems of quantum cryptography. The fine structure of exciton states in AlInAs and InGaAs(111) quantum dots is studied. It is shown that, for a set of quantum dots, the splitting of exciton states is comparable to the natural width of exciton lines, which is

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29

Haendel, K. M., U. Denker, O. G. Schmidt, A. G. M. Jansen, and R. J. Haug. "Nonlinear transport in p-type SiGe quantum well structure containing Ge quantum dots." Physica E: Low-dimensional Systems and Nanostructures 21, no. 2-4 (2004): 487–90. http://dx.doi.org/10.1016/j.physe.2003.11.048.

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30

Chokbunpiam, Tatiya, Patchanita Thamyongkit, Oraphan Saengsawang, and Supot Hannongbua. "Molecular Structure and Electronic Properties of Porphyrin-Thiophene-Perylene Using Quantum Chemical Calculation." International Journal of Photoenergy 2010 (2010): 1–8. http://dx.doi.org/10.1155/2010/492313.

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This study aimed to design a new series of compounds consisting of a porphyrin macrocycle linked to a perylene unit via a thiophenic bridge. The structural and electronic properties of the molecules, and the effects of mono- and di-substituents R on C3and R′on C4of the thiophene ring were investigated using a quantum calculation approach. The results from the method validation revealed that using the density functional theory approach at B3LYP/6–31G(d) data set was the optimal one, considering the accuracy attained and maintaining the computer time required within tractable limits. The results

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Яковлев, Г. Е., М. В. Дорохин, В. И. Зубков та ін. "Особенности электрохимического вольт-фарадного профилирования арсенид-галлиевых светоизлучающих и pHEMT-структур с квантово-размерными областями". Физика и техника полупроводников 52, № 8 (2018): 873. http://dx.doi.org/10.21883/ftp.2018.08.46212.8708.

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AbstractGaAs light-emitting (LED) and HEMT structures with δ-doped regions, InGaAs/GaAs quantum wells, and surface layers of InAs/GaAs quantum dots were studied by means of the electrochemical capacitance- voltage profiling technique. The concentration depth profiles of free charge carriers were obtained. Charges accumulated in quantum wells and quantum dots, as well as the doping levels of the emitter and δ layers were determined. The band structure and free carrier density distribution over the depth of the samples with different quantum well geometry were simulated. The specific features of

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32

Yan, Shikai, Qing Li, Xu Zhang, Sheng Tang, Wei Lei, and Jing Chen. "A vertical structure photodetector based on all‐inorganic perovskite quantum dots." Journal of the Society for Information Display 28, no. 1 (2019): 9–15. http://dx.doi.org/10.1002/jsid.853.

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33

Rodriguez, E., E. Jimenez, G. J. Jacob, A. A. R. Neves, C. L. Cesar, and L. C. Barbosa. "Fabrication and characterization of a PbTe quantum dots multilayer structure." Physica E: Low-dimensional Systems and Nanostructures 26, no. 1-4 (2005): 361–65. http://dx.doi.org/10.1016/j.physe.2004.08.090.

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34

Timm, R., H. Eisele, A. Lenz, et al. "Structure of InAs/GaAs quantum dots grown with Sb surfactant." Physica E: Low-dimensional Systems and Nanostructures 32, no. 1-2 (2006): 25–28. http://dx.doi.org/10.1016/j.physe.2005.12.009.

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Young, R. J., R. M. Stevenson, A. J. Shields, et al. "Inversion of the exciton fine structure splitting in quantum dots." Physica E: Low-dimensional Systems and Nanostructures 32, no. 1-2 (2006): 97–100. http://dx.doi.org/10.1016/j.physe.2005.12.070.

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Chen, Qiran, Zhigang Song, Daohua Zhang, Handong Sun, and Weijun Fan. "Effect of Size on the Electronic Structure and Optical Properties of Cubic CsPbBr3 Quantum Dots." IEEE Journal of Quantum Electronics 56, no. 1 (2020): 1–7. http://dx.doi.org/10.1109/jqe.2019.2949639.

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Liu, Yi, Liyong Du, Kuikun Gu, and Mingzhe Zhang. "Effect of Tm dopant on luminescence, photoelectric properties and electronic structure of In2S3 quantum dots." Journal of Luminescence 217 (January 2020): 116775. http://dx.doi.org/10.1016/j.jlumin.2019.116775.

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38

Nomura, Wataru, Makoto Naruse, Masashi Aono, et al. "Demonstration of Controlling the Spatiotemporal Dynamics of Optical Near-Field Excitation Transfer in Y-Junction Structure Consisting of Randomly Distributed Quantum Dots." Advances in Optical Technologies 2014 (April 27, 2014): 1–8. http://dx.doi.org/10.1155/2014/569684.

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Solution searching devices that operate on the basis of controlling the spatiotemporal dynamics of excitation transfer via dressed photon interactions between quantum dots have been proposed. Long-range excitation transfer based on dressed photon interactions between randomly distributed quantum dots is considered to be effective in realizing such devices. Here, we successfully controlled the spatiotemporal dynamics of excitation transfer using a Y-junction structure consisting of randomly dispersed CdSe/ZnS core-shell quantum dots. This Y-junction structure has two “output ends” and one “tap

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Hayakawa, Ryoma, Nobuya Hiroshiba, Toyohiro Chikyow, and Yutaka Wakayama. "Single-Electron Tunneling through Molecular Quantum Dots in a Metal-Insulator-Semiconductor Structure." Advanced Functional Materials 21, no. 15 (2011): 2933–37. http://dx.doi.org/10.1002/adfm.201100220.

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40

Oleshko, Vladimir P., Peter A. Crozier, Nick Schryvers, and Michail Vargaftik. "Mesostructure Of Pd And Pt Nanoclusters Chemically Stabilized With Phosphide And Phenanthroline Ligands: Hrtem And Aem Characterization." Microscopy and Microanalysis 5, S2 (1999): 184–85. http://dx.doi.org/10.1017/s1431927600014240.

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The noble metal (Me = Au, Pd, Rh, and Pt) polynuclear coordination compounds of Chini’s type eventually serve as a remarkable bridge between molecular clusters and metal colloids. The sizes of the metal cores of the cluster compounds are close to lower sizes of colloidal metal particles. However, chemically stabilized nanoclusters have a distinct ligand environment with a definite stoichiometry inherent to molecular clusters. Interest in structures of the cluster compounds has increased in recent years in view of their unique selective catalytic properties under mild conditions, which, in prin

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41

Zenkevich, Eduard I., and Christian von Borczyskowski. "Self-organization principles in the formation of multiporphyrin complexes and "semiconductor quantum dot-porphyrin" nanoassemblies." Journal of Porphyrins and Phthalocyanines 18, no. 01n02 (2014): 1–19. http://dx.doi.org/10.1142/s1088424613300097.

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In this paper, we review several aspects of molecular recognition (based on non-covalent binding interactions) occurring between meso-pyridyl substituted tetrapyrrole extra-ligands and chemical dimers of tetrapyrrolic macrocycles containing central Zn ions and spacers of various nature and flexibility. Experimental results obtained by us earlier are analyzed using a novel approach (based on steady-state absorption/fluorescence measurements) for the evaluation of complexation constants KC for the formation of porphyrin triads. It was found that KC values [ KC ~ (0.5 – 70) × 106 M-1] show notice

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42

Салий, Р. А., И. С. Косарев, С. А. Минтаиров, А. М. Надточий, М. З. Шварц та Н. А. Калюжный. "In-=SUB=-0.8-=/SUB=-Ga-=SUB=-0.2-=/SUB=-As квантовые точки для GaAs-фотопреобразователей: особенности роста, исследование методом металлорганической газофазной эпитаксии, и свойства". Физика и техника полупроводников 52, № 7 (2018): 729. http://dx.doi.org/10.21883/ftp.2018.07.46043.8808.

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AbstractThe growth peculiarities of In_0.8Ga_0.2As quantum dots and their arrays on GaAs surface by metalorganic vapor-phase epitaxy are investigated. The bimodal size distribution of In_0.8Ga_0.2As quantum dots is established from the photoluminescence spectra recorded at different temperatures. The growth parameters were determined at which the stacking of 20 In_0.8Ga_0.2As quantum-dot layers in the active area of a GaAs solar cell makes it possible to enhance the photogenerated current by 0.97 and 0.77 mA/cm^2 for space and terrestrial solar spectra, respectively, with the high quality of t

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Högele, A., B. Alèn, F. Bickel, R. J. Warburton, P. M. Petroff, and K. Karrai. "Exciton fine structure splitting of single InGaAs self-assembled quantum dots." Physica E: Low-dimensional Systems and Nanostructures 21, no. 2-4 (2004): 175–79. http://dx.doi.org/10.1016/j.physe.2003.11.007.

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44

Nikolyuk, V. A., and I. V. Ignatiev. "The energy structure of quantum dots induced in quantum wells by a nonuniform electric field." Semiconductors 41, no. 12 (2007): 1422–29. http://dx.doi.org/10.1134/s1063782607120081.

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Yalavarthi, K., V. Gaddipati, and S. Ahmed. "Internal fields in InN/GaN quantum dots: Geometry dependence and competing effects on the electronic structure." Physica E: Low-dimensional Systems and Nanostructures 43, no. 6 (2011): 1235–39. http://dx.doi.org/10.1016/j.physe.2011.02.007.

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Деребезов, И. А., В. А. Гайслер, А. В. Гайслер та ін. "Неклассические источники света на основе селективно позиционированных микролинзовых структур и (111) In(Ga)As квантовых точек". Физика и техника полупроводников 53, № 10 (2019): 1338. http://dx.doi.org/10.21883/ftp.2019.10.48286.32.

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Hybrid microcavity for single quantum dot based emitters has been developed and realized. The microcavity consists of semiconductor distributed Bragg reflector and microlens, which is selectively positioned over a single (111) In(Ga)As quantum dot. We have demonstrated pure single photon emission with g(2)(0) = 0.07. The fine structure of exciton states of (111) In(Ga)As quantum dots is studied. It is shown that the splitting of exciton states is comparable with the natural width of exciton lines, which is of great interest for the design of emitters of pairs of entangled photons on the basis

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Kim, M. J., L. C. Liu, S. H. Risbud, and R. W. Carpenter. "Nanostructure of semiconductor quantum dots in a borosilicate glass matrix by complementary use of HREM and AEM." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (1990): 728–29. http://dx.doi.org/10.1017/s0424820100176770.

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When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because

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Tharammal, Rafsa Koyadeen, Anand Kumar, A. R. Abdul Rajak, and Vilas Haridas Gaidhane. "Theoretical Investigation of Design Methodology, Optimized Molecular Geometries, and Electronic Properties of Benzene-Based Single Molecular Switch with Metal Nanoelectrodes." Journal of Nanomaterials 2020 (September 1, 2020): 1–15. http://dx.doi.org/10.1155/2020/6260735.

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Understanding the electronic properties at the single molecular level is the first step in designing functional electronic devices using individual molecules. This paper proposes a simulation methodology for the design of a single molecular switch. A single molecular switch has two stable states that possess different chemical configurations. The methodology is implemented for 1,4-benzene dithiol (BDT) molecule with gold, silver, platinum, and palladium metal nanoelectrodes. The electronic properties of the designed metal-molecule-metal sandwich structure have been investigated using density f

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Limborço, Henrique, Pedro MP Salomé, Rodrigo Ribeiro-Andrade, et al. "CuInSe2 quantum dots grown by molecular beam epitaxy on amorphous SiO2 surfaces." Beilstein Journal of Nanotechnology 10 (May 22, 2019): 1103–11. http://dx.doi.org/10.3762/bjnano.10.110.

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The currently most efficient polycrystalline solar cells are based on the Cu(In,Ga)Se2 compound as a light absorption layer. However, in view of new concepts of nanostructured solar cells, CuInSe2 nanostructures are of high interest. In this work, we report CuInSe2 nanodots grown through a vacuum-compatible co-evaporation growth process on an amorphous surface. The density, mean size, and peak optical emission energy of the nanodots can be controlled by changing the growth temperature. Scanning transmission electron microscopy measurements confirmed the crystallinity of the nanodots as well as

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Hu, Bing, Xia Zhou, Yan Tang, et al. "Photocurrent response in a double barrier structure with quantum dots–quantum well inserted in central well." Physica E: Low-dimensional Systems and Nanostructures 33, no. 2 (2006): 355–58. http://dx.doi.org/10.1016/j.physe.2006.04.006.

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