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Relevant bibliographies by topics / Quantum dots. Semiconductors

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Academic literature on the topic 'Quantum dots. Semiconductors'

Author: Grafiati

Published: 4 June 2021

Last updated: 8 February 2022

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Journal articles on the topic "Quantum dots. Semiconductors"

1

Nozik, Arthur J., and Olga I. Mićić. "Colloidal Quantum Dots of III-V Semiconductors." MRS Bulletin 23, no. 2 (February 1998): 24–30. http://dx.doi.org/10.1557/s0883769400031237.

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Quantization effects in semiconductor structures were first demonstrated in the early 1970s in III-V quantum wells; these structures consisted of a thin epitaxial film of a smaller bandgap (Eg) semiconductor (e.g., GaAs, Eg = 1.42 eV) sandwiched between two epitaxial films of a larger bandgap semiconductor (e.g., Al0.3Ga0.7As, Eg = 2.0 eV). The conduction- and valence-band offsets of the two semiconductor materials produce potential barriers for electrons and holes, respectively. The smaller bandgap semiconductor constitutes the quantum-well region and the larger bandgap material the potential barrier region. If the film of the smaller bandgap material is sufficiently thin (thickness less than the de-Broglie wavelength of the charge carriers, which typically requires thicknesses less than about 300 Å for III-V semiconductors), then the charge carriers are confined in one dimension by the potential barriers, and quantization of the energy levels for both electrons and holes can occur (Figure 1).

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Xu, Yuanqing, Weibiao Wang, Zhexue Chen, Xinyu Sui, Aocheng Wang, Cheng Liang, Jinquan Chang, et al. "A general strategy for semiconductor quantum dot production." Nanoscale 13, no. 17 (2021): 8004–11. http://dx.doi.org/10.1039/d0nr09067k.

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O’Brien, Paul. "Quantum dots – Nanoparticulates of semiconductors." Current Opinion in Solid State and Materials Science 6, no. 4 (August 2002): 335. http://dx.doi.org/10.1016/s1359-0286(02)00096-7.

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Wang, Dan-Yan, Yu-Yun Yin, Chuan-Wei Feng, Rukhsana, and Yong-Miao Shen. "Advances in Homogeneous Photocatalytic Organic Synthesis with Colloidal Quantum Dots." Catalysts 11, no. 2 (February 18, 2021): 275. http://dx.doi.org/10.3390/catal11020275.

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Colloidal semiconductor quantum dots (QDs) have been proven to be excellent photocatalysts due to their high photostability, large extinction coefficients, and tunable optoelectrical properties, and have attracted extensive attention by synthetic chemists. These excellent properties demonstrate its promise in the field of photocatalysis. In this review, we summarize the recent application of QDs as homogeneous catalysts in various photocatalytic organic reactions. These meaningful works in organic transformations show the unique catalytic activity of quantum dots, which are different from other semiconductors.

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Jang, Youngjin, Arthur Shapiro, Faris Horani, Yaron Kauffmann, and Efrat Lifshitz. "Towards Low-Toxic Colloidal Quantum Dots." Zeitschrift für Physikalische Chemie 232, no. 9-11 (August 28, 2018): 1443–55. http://dx.doi.org/10.1515/zpch-2018-1148.

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Abstract Colloidal quantum dots (CQDs) are of enormous interest in the scientific and engineering fields. During the past few decades, significant efforts have been conducted in investigating Cd- and Pb-based CQDs, resulting in excellent photoluminescence (PL) properties and impressive performance in various applications. But the high toxicity of Cd and Pb elements pushed the scientific community to explore low-toxic CQDs excluding poisonous heavy metals. Several semiconductor materials with lower toxicity than Cd and Pb species have been proposed. This article presents a short overview of recent efforts involving low-toxic CQDs, focusing especially on IV–VI and III–V semiconductors which are active in the near- and short-wave-infrared (IR) regimes. Recent achievements pertinent to Sn- and In-based CQDs are highlighted as representative examples. Finally, limitations and future challenges are discussed in the review.

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Petroff, P. M., and G. Medeiros-Ribeiro. "Three-Dimensional Carrier Confinement in Strain-Induced Self-Assembled Quantum Dots." MRS Bulletin 21, no. 4 (April 1996): 50–54. http://dx.doi.org/10.1557/s088376940003534x.

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Recent technological and materials advances in semiconductors have brought about the possibility of producing heterostructures within which carriers are confined to an ultrasmall region of space (a few thousand atoms) by a potential barrier. When the dimensions of the confining potential are smaller than the electron wavelength (a few tens of nanometers), the semiconductor electronic and optical properties are drastically altered. In these so-called quantum structures, carrier energy levels are quantized and their energy depends on the confining-potential dimensions and magnitude.Some of these quantum structures have already found technological applications. For example the quantum-well (QW) semiconductor laser is part of every CD player. It is also widely used as the light source for intercontinental optical communications. The carrier confining potential in this case is provided by two wider bandgap semiconductor layers sandwiching a thin (3–20 nm) smaller bandgap semiconductor film. The carriers have two degrees of freedom within the QW. The QWs are grown by epitaxial deposition on a crystalline substrate. The substrate may or may not be lattice-matched with the epitaxial film. In some instances, a small lattice mismatch may be required to obtain the desired band-gap value for the QW material. These are the so-called pseudomorphically strained QW structures and devices.

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Zhang, Shuo, Yao Hu, and Qun Hao. "Advances of Sensitive Infrared Detectors with HgTe Colloidal Quantum Dots." Coatings 10, no. 8 (August 4, 2020): 760. http://dx.doi.org/10.3390/coatings10080760.

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The application of infrared detectors based on epitaxially grown semiconductors such as HgCdTe, InSb and InGaAs is limited by their high cost and difficulty in raising operating temperature. The development of infrared detectors depends on cheaper materials with high carrier mobility, tunable spectral response and compatibility with large-scale semiconductor processes. In recent years, the appearance of mercury telluride colloidal quantum dots (HgTe CQDs) provided a new choice for infrared detection and had attracted wide attention due to their excellent optical properties, solubility processability, mechanical flexibility and size-tunable absorption features. In this review, we summarized the recent progress of HgTe CQDs based infrared detectors, including synthesis, device physics, photodetection mechanism, multi-spectral imaging and focal plane array (FPA).

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Жуков, Н. Д., Д. В. Крыльский, М. И. Шишкин, and А. А. Хазанов. "Синтез, фото- и катодолюминесцентные свойства коллоидных квантовых точек CdSe, CdTe, PbS, InSb, GaAs." Физика и техника полупроводников 53, no. 8 (2019): 1103. http://dx.doi.org/10.21883/ftp.2019.08.48002.9037.

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AbstractQuantum dots of the group of wide-gap and narrow-gap semiconductors are synthesized and investigated under identical conditions, which makes it possible to perform the comparative analysis and modeling of the mechanisms of radiative recombination and luminescence, for which a stable exciton bond between the electron and hole has an important role. Exciton states are unstable for quantum dots without a shell and narrow-gap semiconductors, which leads to a substantial decrease in the probability of radiative recombination and, correspondingly, the quantum yield of luminescence. The experimental values of the spectral position of the luminescence maximum for quantum dots with clear manifestation of the exciton recombination mechanism noticeably shift to the long-wavelength region with respect to the calculated ones. In calculations and analysis, we use the effective electron mass for bulk semiconductors. The observed good correspondence of the calculated values of the maximum and spectral band with the experiment can mean that quantum dots have a long-range order crystalline structure similar to that one observed in single crystals and polycrystals.

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MIURA, N., Y. H. MATSUDA, and T. IKAIDA. "MEGAGAUSS CYCLOTRON RESONANCE IN SEMICONDUCTOR NANOSTRUCTURES AND DILUTED MAGNETIC SEMICONDUCTORS." International Journal of Modern Physics B 16, no. 20n22 (August 30, 2002): 3399–404. http://dx.doi.org/10.1142/s0217979202014565.

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We report the latest results of cyclotron resonance experiments on semiconductor nanostructures and diluted magnetic semiconductors (DMS) in very high magnetic fields up to 600 T produced by magnetic flux compression and the single turn coiled technique. Many new features were observed in the very high field range, such as characteristic behavior of low dimensional electrons, carrier dynamics or electron-electron interaction effects in quantum wells and quantum dot samples. In PbSe/PdEuTe quantum dots, which were regularly arranged to form an fcc superlattice, we observed an absorption peak with a splitting and a wavelength dependence of the absorption intensity. In DMS, such as CdMnTe and InMnAs, change of the carrier effective mass with Mn doping was studied in detail. We found anomalous mass increase with doping of magnetic ions. The amount of the observed mass increase cannot be explained by the k·p theory and suggests the importance of d-s or d-p hybridization.

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BHATT, R. N., and ERIK NIELSEN. "FERROMAGNETISM IN DOPED SEMICONDUCTORS WITHOUT MAGNETIC IONS." International Journal of Modern Physics B 22, no. 25n26 (October 20, 2008): 4595–606. http://dx.doi.org/10.1142/s0217979208050358.

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While ferromagnetism has been obtained above 100 K in doped semiconductors with magnetic ions such as Ga 1−x Mn x As , bulk doped semiconductors in the absence of magnetic ions have shown no tendency towards ferromagnetism. We re-examine the nonmagnetic doped semiconductor system at low carrier densities in terms of a generalized Hubbard model. Using exact diagonalization of the many-body Hamiltonian for finite clusters, we find that the system exhibits significant ferromagnetic tendencies at nanoscales, in a region of parameter space not accessible to bulk systems, but achievable in quantum dots and heterostructures. Implications for studying these effects in experimentally realizable systems, as well as the possibility of true (macroscopic) ferromagnetism in these systems is discussed.

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Dissertations / Theses on the topic "Quantum dots. Semiconductors"

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Malins, David Brendan. "Ultrafast dynamics in InAs quantum dot and GaInNAs quantum well semiconductor heterostructures /." St Andrews, 2007. http://hdl.handle.net/10023/404.

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Wei, Zhifeng. "The optical response of semiconductor self-assembled quantum dots." Click to view the E-thesis via HKUTO, 2006. http://sunzi.lib.hku.hk/hkuto/record/B37098202.

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Hull, Peter J. "Synthesis and characterisation of quantum dots." Thesis, University of Oxford, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318760.

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Isaev, Leonid. "Spontaneous polarization effects in nanoscale systems based on narrow-gap semiconductors." Virtual Press, 2005. http://liblink.bsu.edu/uhtbin/catkey/1328116.

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In the framework of the two-band (Dirac) model, we analyze the electronic structure of nanoscale systems, based on narrow-gap semiconductors of Pb,_xSnx (Se, S) type. Themain attention is paid to the influence of properties of the surface, encoded in appropriate boundary conditions, on the size-quantized spectrum. From this point of view we consider two types of systems: spherical (quantum dots) and quasi one-dimensional (films).It is shown that the spectrum of the spherical quantum dot consists not only of usual size-quantized states, located above the gap edge, but also surface modes residing inside the gap. Such states manifest themselves in the far infrared part of the absorption spectrum, the measurement of which allows one to extract information about the dot surface.Next, we consider a film with the energy gap modulated in the <111> (growth) direction. It is shown that the spectrum of the infinite crystal possesses a supersymmetrical structure. The film boundaries, generally speaking, destroy the supersymmetry, i.e. size-quantized subbands turn out to be spin-split. However, there exists a class of boundary conditions that do not lift spin degeneracy. Physically, in this case there is no band mismatch at interfaces. Our central statement, therefore, consists of the following: even when the inversion symmetry is destroyed by the bulk inhomogeneity, the spin-splitting of the spectrum is a purely surface effect. This is illustrated on a simple example, when the energy gap varies linearly over the film width.Finally, we investigate the role of boundary conditions in the problem of scattering of spinor waves by a quantum dot. It is shown that the existence of surface states greatly modifies the scattering data; in particular, outgoing waves may turn out to be fully polarized.
Department of Physics and Astronomy

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Angell, Joshua James. "SYNTHESIS AND CHARACTERIZATION OF CdSe-ZnS CORE-SHELL QUANTUM DOTS FOR INCREASED QUANTUM YIELD." DigitalCommons@CalPoly, 2011. https://digitalcommons.calpoly.edu/theses/594.

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Quantum dots are semiconductor nanocrystals that have tunable emission through changes in their size. Producing bright, efficient quantum dots with stable fluorescence is important for using them in applications in lighting, photovoltaics, and biological imaging. This study aimed to optimize the process for coating CdSe quantum dots (which are colloidally suspended in octadecene) with a ZnS shell through the pyrolysis of organometallic precursors to increase their fluorescence and stability. This process was optimized by determining the ZnS shell thickness between 0.53 and 5.47 monolayers and the Zn:S ratio in the precursor solution between 0.23:1 and 1.6:1 that maximized the relative photoluminescence quantum yield (PLQY) while maintaining a small size dispersion and minimizing the shift in the center wavelength (CWL) of the fluorescence curve. The process that was developed introduced a greater amount of control in the coating procedure than previously available at Cal Poly. Quantum yield was observed to increase with increasing shell thickness until 3 monolayers, after which quantum yield decreased and the likelihood of flocculation of the colloid increased. The quantum yield also increased with increasing Zn:S ratio, possibly indicating that zinc atoms may substitute for missing cadmium atoms at the CdSe surface. The full-width at half-maximum (FWHM) of the fluorescence spectrum did not change more than ±5 nm due to the coating process, indicating that a small size dispersion was maintained. The center wavelength (CWL) of the fluorescence spectrum red shifted less than 35 nm on average, with CWL shifts tending to decrease with increasing Zn:S ratio and larger CdSe particle size. The highest quantum yield was achieved by using a Zn:S ratio of 1.37:1 in the precursor solution and a ZnS shell thickness of approximately 3 monolayers, which had a red shift of less than 30 nm and a change in FWHM of ±3 nm. Photostability increased with ZnS coating as well. Intense UV irradiation over 12 hours caused dissolution of CdSe samples, while ZnS coated samples flocculated but remained fluorescent. Atomic absorption spectroscopy was investigated as a method for determining the thickness of the ZnS shell, and it was concluded that improved sample preparation techniques, such as further purification and complete removal of unreacted precursors, could make this testing method viable for obtaining quantitative results in conjunction with other methods. However, the ZnS coating process is subject to variations due to factors that were not controlled, such as slight variations in temperature, injection speed, and rate and degree of precursor decomposition, resulting in standard deviations in quantum yield of up to half of the mean and flocculation of some samples, indicating a need for as much process control as possible.

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Park, Gyoungwon. "GaAs-based long-wavelength quantum dot lasers /." Digital version, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3008414.

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De, Amritanand Pryor Craig E. "Spin dynamics and opto-electronic properties of some novel semiconductor systems." [Iowa City, Iowa] : University of Iowa, 2009. http://ir.uiowa.edu/etd/352.

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Garrido, Mauricio. "Quantum Optics in Coupled Quantum Dots." Ohio University / OhioLINK, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1273589966.

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Little, Reginald Bernard. "The synthesis and characterization of some II-VI semiconductor quantum dots, quantum shells and quantum wells." Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/30573.

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Archer, Paul I. "Building on the hot-injection architecture : giving worth to alternative nanocrystal syntheses /." Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/8520.

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Books on the topic "Quantum dots. Semiconductors"

1

Jacak, Lucjan. Quantum dots. Berlin: Springer, 1998.

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W, Koch S., ed. Semiconductor quantum dots. Singapore: World Scientific, 1993.

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Nanocrystals and quantum dots of group IV semiconductors. Stevenson Ranch, Calif: American Scientific Publishers, 2010.

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Optical properties of semiconductor quantum dots. Berlin: Springer, 1997.

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Quantum dots: Research, technology, and applications. New York: Nova Science Publishers, 2008.

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Borri, Paola. Coherent light-matter interaction in semiconductor quantum dots. Aachen: Shaker, 2004.

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Kroutvar, Miroslav. Charge and spin storage in quantum dots. Garching: Verein zur Förderung des Walter Schottky Institut der Techn. Univ. München, 2006.

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Takafumi, Yao, Woo Jong-Chun, Kikai Shinkō Kyōkai, and Hanʼguk Kwahak Chaedan, eds. Physics and applications of semiconductor quantum structures: Proceedings of the International Workshop on Physics and Applications of Semiconductor Quantum Structures (Asian Science Seminar), Cheju Island, Korea, October 18-23, 1998. Bristol, U.K: Institute of Physics Pub., 2001.

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International, Workshop on Physics and Applications of Semiconductor Quantum Structures (1998 Cheju Island Korea). Physics and applications of semiconductor quantum structures: Proceedings of the International Workshop on Physics and Applications of Semiconductor Quantum Structures (Asian Science Seminar), Cheju Island, Korea, October 18-23, 1998. Bristol, U.K: Institute of Physics Pub., 2001.

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Sabathil, Matthias. Opto-electronic and quantum transport properties of semiconductor nanostructures. Garching: Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München, 2005.

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Book chapters on the topic "Quantum dots. Semiconductors"

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Henneberger, F., and J. Puls. "Diluted Magnetic Quantum Dots." In Introduction to the Physics of Diluted Magnetic Semiconductors, 161–90. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-15856-8_5.

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Smith, T. P. "Electron Confinement in Quantum Dots." In Localization and Confinement of Electrons in Semiconductors, 10–19. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-84272-6_2.

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Berg, Tommy W., and Jørn M. Hvam. "Semiconductor Quantum Dots for Optoelectronic Applications." In Optics of Semiconductors and Their Nanostructures, 249–73. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-09115-9_11.

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Smith, T. P., H. Arnot, J. A. Brum, L. L. Chang, L. Esaki, A. B. Fowler, W. Hansen, et al. "Quantum-State Spectroscopy in Quantum Wires and Quantum Dots." In Science and Engineering of One- and Zero-Dimensional Semiconductors, 33–39. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4684-5733-9_5.

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Černe, J., H. Akiyama, M. S. Sherwin, S. J. Allen, T. Someya, S. Koshiba, H. Sakaki, Y. Arakawa, and Y. Nagamune. "Hot Excitons in Quantum Wells, Wires, and Dots." In Hot Carriers in Semiconductors, 305–8. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0401-2_70.

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Brum, J. A., and G. Bastard. "Electronic Properties of Quantum Dots and Modulated Quantum Wires." In Science and Engineering of One- and Zero-Dimensional Semiconductors, 41–50. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4684-5733-9_6.

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Leburton, Jean-Pierre, and Satyadev Nagaraja. "Electronic Properties of Quantum Dots and Artificial Atoms." In Optical Spectroscopy of Low Dimensional Semiconductors, 235–56. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5578-6_12.

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Hawrylak, Pawel. "Magnetic Ion–Carrier Interactions in Quantum Dots." In Introduction to the Physics of Diluted Magnetic Semiconductors, 191–219. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-15856-8_6.

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Beaumont, S. P. "Quantum Wires and Dots: The Challenge to Fabrication Technology." In Low-Dimensional Structures in Semiconductors, 109–21. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4899-0623-6_7.

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Herron, Norman, and Ying Wang. "Size Quantized Semiconductors in Porous Hosts—Quantum Dots." In Inclusion Phenomena and Molecular Recognition, 401–7. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4613-0603-0_38.

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Conference papers on the topic "Quantum dots. Semiconductors"

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Muljarov, E. A., and R. Zimmermann. "Phonon-induced Exciton Dephasing in Quantum Dots and Quantum Dot Molecules." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730190.

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del Valle, Elena, Filippo Troiani, and Carlos Tejedor. "Cavity quantum electrodynamics for two quantum dots." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730270.

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Hetterich, M., W. Löffler, J. Fallert, T. Passow, B. Daniel, J. Lupaca-Schomber, J. Hetterich, S. Li, C. Klingshirn, and H. Kalt. "Electrical Spin Injection into InGaAs Quantum Dot Ensembles and Single Quantum Dots." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730371.

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Bayir, Mehtap. "Magnetotransport in HgSe:Fe quantum-dots." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994346.

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Könemann, J. "Level anticrossings in quantum dots." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994353.

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Bezerra, M. G., G. A. Farias, J. A. K. Freire, and R. Ferreira. "Rough InAs/GaAs Quantum Dots." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730182.

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Danckwerts, J. "Quantum information processing using Coulomb-coupled quantum dots." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994668.

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Rogge, M. C., E. Räsänen, R. J. Haug, Jisoon Ihm, and Hyeonsik Cheong. "Spin Droplet Formation in Quantum Dots." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666373.

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Luther, Joseph. "Uncovering Fundamental Properties and Applications of Hybrid Nanoscale Perovskite Semiconductors." In Internet Conference for Quantum Dots. València: Fundació Scito, 2020. http://dx.doi.org/10.29363/nanoge.icqd.2020.038.

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Lombez, L., P. F. Braun, P. Renucci, O. Krebs, D. Lagarde, B. Urbaszek, X. Marie, T. Amand, and P. Voisin. "Electron spin quantum beats in positively charged quantum dots." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730388.

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Reports on the topic "Quantum dots. Semiconductors"

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VanSant, Kaitlyn. Thin Film Solar Cells Using ZnO Nanowires, Organic Semiconductors and Quantum Dots. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.2692.

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Steel, Duncan G. Development and Application of Semiconductor Quantum Dots to Quantum Computing. Fort Belvoir, VA: Defense Technical Information Center, March 2002. http://dx.doi.org/10.21236/ada413562.

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Cundiff, Steven T. Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots. Office of Scientific and Technical Information (OSTI), May 2016. http://dx.doi.org/10.2172/1250541.

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Nielsen, Erik, Xujiao Gao, Irina Kalashnikova, Richard Partain Muller, Andrew Gerhard Salinger, and Ralph Watson Young. QCAD simulation and optimization of semiconductor double quantum dots. Office of Scientific and Technical Information (OSTI), December 2013. http://dx.doi.org/10.2172/1204068.

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Ricken, James Bryce, Lynette Rios, Jens Fredrich Poschet, Marlene Bachand, George David Bachand, Adrienne Celeste Greene, and Amanda Carroll-Portillo. Toxicological studies of semiconductor quantum dots on immune cells. Office of Scientific and Technical Information (OSTI), November 2008. http://dx.doi.org/10.2172/945919.

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Bandyopadhyay, Supriyo, Hadis Morkoc, Alison Baski, and Shiv Khanna. Self Assembled Semiconductor Quantum Dots for Spin Based All Optical and Electronic Quantum Computing. Fort Belvoir, VA: Defense Technical Information Center, April 2008. http://dx.doi.org/10.21236/ada483818.

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Narayanamurti, Venkatesh. Ballistic Electron Emission Spectroscopy Study of Transport through Semiconductor Quantum Wells and Quantum Dots. Fort Belvoir, VA: Defense Technical Information Center, September 1997. http://dx.doi.org/10.21236/ada329782.

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Cundiff, Steven. Final Report for Optical Two-Dimensional Spectroscopy of Semiconductor Quantum Wells and Quantum Dots. Office of Scientific and Technical Information (OSTI), December 2019. http://dx.doi.org/10.2172/1577852.

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Paiella, Roberto, and Theodore D. Moustakas. Plasmonic Control of Radiation and Absorption Processes in Semiconductor Quantum Dots. Office of Scientific and Technical Information (OSTI), July 2017. http://dx.doi.org/10.2172/1373285.

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Steel, Duncan G. Time Resolved Nano-Optical Spectroscopy of Coherently Excited Semiconductor Quantum Dots. Fort Belvoir, VA: Defense Technical Information Center, October 2000. http://dx.doi.org/10.21236/ada386872.

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