Relevant bibliographies by topics / Quantum dots. Semiconductors. Gallium nitride

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Quantum dots. Semiconductors. Gallium nitride'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 February 2022

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Journal articles on the topic "Quantum dots. Semiconductors. Gallium nitride"

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Ahmad Fauzi, Dhiyauddin, Nahrul Khair Alang Md Rashid, Muhammad Rawi Mohamed Zin, and Nurul Fadzlin Hasbullah. "RADIATION PERFORMANCE OF GAN AND INAS/GAAS QUANTUM DOT BASED DEVICES SUBJECTED TO NEUTRON RADIATION." IIUM Engineering Journal 18, no. 1 (May 30, 2017): 101–9. http://dx.doi.org/10.31436/iiumej.v18i1.653.

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In addition to their useful optoelectronics functions, gallium nitride (GaN) and quantum dots (QDs) based structures are also known for their radiation hardness properties. With demands on such semiconductor material structures, it is important to investigate the differences in reliability and radiation hardness properties of these two devices. For this purpose, three sets of GaN light-emitting diode (LED) and InAs/GaAs dot-in-a well (DWELL) samples were irradiated with thermal neutron of fluence ranging from 3×1013 to 6×1014 neutron/cm2 in PUSPATI TRIGA research reactor. The radiation performances for each device were evaluated based on the current-voltage (I-V) and capacitance-voltage (C-V) electrical characterisation method. Results suggested that the GaN based sample is less susceptible to electrical changes due to the thermal neutron radiation effects compared to the QD based sample.
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Murali, Amith K., Valerie J. Leppert, and Subhash H. Risbud. "Gallium nitride quantum dots in a silica xerogel matrix." Materials Science and Engineering: B 76, no. 3 (July 2000): 206–10. http://dx.doi.org/10.1016/s0921-5107(00)00452-9.

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Goodwin, Timothy J., Valerie J. Leppert, Subhash H. Risbud, Ian M. Kennedy, and Howard W. H. Lee. "Synthesis of gallium nitride quantum dots through reactive laser ablation." Applied Physics Letters 70, no. 23 (June 9, 1997): 3122–24. http://dx.doi.org/10.1063/1.119109.

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Brown, J., C. Elsass, C. Poblenz, P. M. Petroff, and I. S. Speck. "Temperature Dependent Photoluminescence of MBE Grown Gallium Nitride Quantum Dots." physica status solidi (b) 228, no. 1 (November 2001): 199–202. http://dx.doi.org/10.1002/1521-3951(200111)228:1<199::aid-pssb199>3.0.co;2-w.

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Chaudhuri, Reet, Samuel James Bader, Zhen Chen, David A. Muller, Huili Grace Xing, and Debdeep Jena. "A polarization-induced 2D hole gas in undoped gallium nitride quantum wells." Science 365, no. 6460 (September 26, 2019): 1454–57. http://dx.doi.org/10.1126/science.aau8623.

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A high-conductivity two-dimensional (2D) hole gas, analogous to the ubiquitous 2D electron gas, is desirable in nitride semiconductors for wide-bandgap p-channel transistors. We report the observation of a polarization-induced high-density 2D hole gas in epitaxially grown gallium nitride on aluminium nitride and show that such hole gases can form without acceptor dopants. The measured high 2D hole gas densities of about 5 × 1013 per square centimeters remain unchanged down to cryogenic temperatures and allow some of the lowest p-type sheet resistances among all wide-bandgap semiconductors. The observed results provide a probe for studying the valence band structure and transport properties of wide-bandgap nitride interfaces.
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Sinha, Godhuli, Subhendu K. Panda, Pratima Mishra, Dibyendu Ganguli, and Subhadra Chaudhuri. "Gallium nitride quantum dots in a nitrogen-bonded silica gel matrix." Journal of Physics: Condensed Matter 19, no. 34 (July 20, 2007): 346209. http://dx.doi.org/10.1088/0953-8984/19/34/346209.

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Peres, M., A. J. Neves, T. Monteiro, S. Magalhães, N. Franco, K. Lorenz, E. Alves, et al. "Optical and Structural Properties of an Eu Implanted Gallium Nitride Quantum Dots/Aluminium Nitride Superlattice." Journal of Nanoscience and Nanotechnology 10, no. 4 (April 1, 2010): 2473–78. http://dx.doi.org/10.1166/jnn.2010.1430.

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Burkhart, Casey C., Kinnari N. Patel, Jennifer G. G. Pagan, Phillip Barletta, and E. B. Stokes. "Surface Study of P-Type MBE Gallium Nitride Growth over CdSe Quantum Dots." ECS Transactions 3, no. 5 (December 21, 2019): 469–75. http://dx.doi.org/10.1149/1.2357239.

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Kalden, J., C. Tessarek, K. Sebald, S. Figge, C. Kruse, D. Hommel, and J. Gutowski. "Electroluminescence from isolated single indium gallium nitride quantum dots up to 150 K." physica status solidi (a) 207, no. 6 (May 21, 2010): 1428–30. http://dx.doi.org/10.1002/pssa.200983648.

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Dimos, Konstantinos, L'uboš Jankovič, Ioannis B. Koutselas, Michael A. Karakassides, Radek Zbořil, and Peter Komadel. "Low-Temperature Synthesis and Characterization of Gallium Nitride Quantum Dots in Ordered Mesoporous Silica." Journal of Physical Chemistry C 116, no. 1 (December 22, 2011): 1185–94. http://dx.doi.org/10.1021/jp208011y.

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Dissertations / Theses on the topic "Quantum dots. Semiconductors. Gallium nitride"

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Olofsson, Karl-Johan. "Black-box optimization of simulated light extraction efficiency from quantum dots in pyramidal gallium nitride structures." Thesis, Linköpings universitet, Matematiska institutionen, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-162235.

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Microsized hexagonal gallium nitride pyramids show promise as next generation Light Emitting Diodes (LEDs) due to certain quantum properties within the pyramids. One metric for evaluating the efficiency of a LED device is by studying its Light Extraction Efficiency (LEE). To calculate the LEE for different pyramid designs, simulations can be performed using the FDTD method. Maximizing the LEE is treated as a black-box optimization problem with an interpolation method that utilizes radial basis functions. A simple heuristic is implemented and tested for various pyramid parameters. The LEE is shown to be highly dependent on the pyramid size, the source position and the polarization. Under certain circumstances, a LEE over 17% is found above the pyramid. The results are however in some situations very sensitive to the simulation parameters, leading to results not converging properly. Establishing convergence for all simulation evaluations must be done with further care. The results imply a high LEE for the pyramids is possible, which motivates the need for further research.
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Huang, Sa. "GaN-Based and High-Speed Metal-Semiconductor-Metal Photodetector: Growth and Device Structures for Integration." Diss., Available online, Georgia Institute of Technology, 2003:, 2003. http://etd.gatech.edu/theses/available/etd-11242003-173234/unrestricted/huang%5Fsa%5F200312%5Fphd.pdf.

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Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2004.
Ferguson, Ian T., Committee Member ; Rhodes, William T., Committee Member ; Wang, Zhonglin, Committee Member ; Brown, April S., Committee Chair ; Jokerst, Nan M., Committee Co-Chair ; Doolittle, W. Alan, Committee Member. Vita. Includes bibliographical references.
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Pan, Guiquan. "Colloidal gallium nitride quantum dots (GaN QDs) : synthesis and characterization /." View abstract, 2006. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&res_dat=xri:pqdiss&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&rft_dat=xri:pqdiss:3248456.

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Wang, Yingjuan. "Comprehensive optical spectroscopic investigations of GaN epilayers and InGaN/GaN quantum structures." Click to view the E-thesis via HKUTO, 2006. http://sunzi.lib.hku.hk/hkuto/record/B37090343.

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Bychkov, Andrey. "Quantum effects in artificial atoms." Thesis, University of Oxford, 2003. http://ora.ox.ac.uk/objects/uuid:93a68cff-9823-47d7-9505-b63806f1bbd4.

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This thesis contains a theoretical and experimental investigation of semiconductor quantum dots (artificial atoms). The first part presents a numerical study of spin effects in GaAs/AlAs modulation-doped quantum dots containing 0 to 50 electrons. A theoretical model is developed to calculate confinement potentials and ground-state electron density distributions using the Kohn-Sham local spin-density approximation. Spin polarization, defined as the difference between the up- and down-spin electron densities, is predicted to occur spontaneously in symmetric quantum dots and in quantum point contacts in the lowdensity regime as a result of electron exchange interactions. This spontaneous magnetization can be controlled by an applied gate voltage, which opens up applications in spintronics and provides a possible explanation for the non-integer quantization of the quantum point contact conductance. The second part describes experimental techniques to investigate photon-exciton coupling in InAs/GaAs self-assembled quantum dots. Two experiments on resonant excitation of a single quantum dot are proposed, whereby the quantum-dot emission is distinguished from resonant pump light by either photon bunching of collected photons with reference photons, or Michelson interferometry. The feasibility study of the proposed experiments shows that the photon-exciton coupling efficiency must be dramatically increased by putting the quantum dot inside an optical microcavity. Novel types of high-quality, low mode-volume semiconductor microcavities containing quantum dots are designed, fabricated, and studied on a newly built setup. We present the first results of photoluminescence studies of InAs quantum dots inside both GaAs single-defect square-lattice photonic-crystal slabs and GaAs/AlAs micropillars, and InAs artificial molecules formed by vertically coupled strain-assisted quantum dots. The results indicate the potential of these nanostructures for implementing resonant transfer of quantum information, developing quantum repeaters and entangled-photon sources, and studying QED effects in the strong-coupling regime.
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Wen, Yuan, and 文苑. "Theoretical and experimental studies of electronic states in InAs/GaAsself-assembled quantum dots." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43224003.

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Wang, Yingjuan, and 王穎娟. "Comprehensive optical spectroscopic investigations of GaN epilayers and InGaN/GaN quantum structures." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2006. http://hub.hku.hk/bib/B37090343.

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Wen, Yuan. "Theoretical and experimental studies of electronic states in InAs/GaAs self-assembled quantum dots." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43224003.

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Park, Gyoungwon. "GaAs-based long-wavelength quantum dot lasers /." Digital version, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3008414.

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Wang, Hongjiang, and 王泓江. "Spectroscopic investigation of optical properties of GaN epilayers andInGaN/GaN quantum wells." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B29779911.

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Books on the topic "Quantum dots. Semiconductors. Gallium nitride"

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Morkoç, Hadis. Gallium nitride materials and devices III: 21-24 January 2008, San Jose, California, USA. Edited by Society of Photo-optical Instrumentation Engineers. Bellingham, Wash: SPIE, 2008.

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Chyi, Jen-Inn. Gallium nitride materials and devices VII: 23-26 January 2012, San Francisco, California, United States. Edited by SPIE (Society). Bellingham, Wash: SPIE, 2012.

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Morkoç, Hadis. Gallium nitride materials and devices IV: 26-29 January 2009, San Jose, California, United States. Edited by SPIE (Society). Bellingham, Wash: SPIE, 2009.

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Chyi, Jen-Inn. Gallium nitride materials and devices V: 25-28 January 2010, San Francisco, California, United States. Edited by SPIE (Society). Bellingham, Wash: SPIE, 2010.

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Kroutvar, Miroslav. Charge and spin storage in quantum dots. Garching: Verein zur Förderung des Walter Schottky Institut der Techn. Univ. München, 2006.

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W, Litton Cole, and Society of Photo-optical Instrumentation Engineers., eds. Gallium nitride materials and devices: 23-25 January 2006, San Jose, California, USA. Bellingham, Wash: SPIE, 2006.

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Hadis, Morkoç, Litton Cole W, and Society of Photo-optical Instrumentation Engineers., eds. Gallium nitride materials and devices II: 22-25 January 2007, San Jose, California, USA. Bellingham, Wash: SPIE, 2007.

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Book chapters on the topic "Quantum dots. Semiconductors. Gallium nitride"

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Yoona, S. F., Z. Z. Suna, and K. C. Yewa. "Recent Progress in Dilute Nitride Quantum Dots." In Dilute Nitride Semiconductors, 157–78. Elsevier, 2005. http://dx.doi.org/10.1016/b978-008044502-1/50005-6.

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Strittmatter, André. "Epitaxial growth of nitride quantum dots." In III-Nitride Semiconductors and their Modern Devices, 147–76. Oxford University Press, 2013. http://dx.doi.org/10.1093/acprof:oso/9780199681723.003.0005.

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Suemune, Ikuo, Katsuhiro Uesugi, and Sasikala Ganapathy. "MOMBE Growth and Characterization of III–V-N Compounds and Application to InAs Quantum Dots." In Dilute Nitride Semiconductors, 137–55. Elsevier, 2005. http://dx.doi.org/10.1016/b978-008044502-1/50004-4.

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Conference papers on the topic "Quantum dots. Semiconductors. Gallium nitride"

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Brault, Julien, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter, Aimeric Courville, et al. "DUV LEDs based on AlGaN quantum dots." In Gallium Nitride Materials and Devices XVI, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2021. http://dx.doi.org/10.1117/12.2576135.

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Mourad, D., S. Schulz, G. Czycholl, Marília Caldas, and Nelson Studart. "Electronic and Optical Properties of Group-III-Nitride Semiconductor Quantum Dots." In PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors. AIP, 2010. http://dx.doi.org/10.1063/1.3295412.

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Kojima, Kazunobu, Hirotaka Ikeda, Kenji Fujito, and Shigefusa F. Chichibu. "Determination of absolute quantum efficiency of radiation in nitride semiconductors using an integrating sphere (Conference Presentation)." In Gallium Nitride Materials and Devices XIII, edited by Jen-Inn Chyi, Hadis Morkoç, and Hiroshi Fujioka. SPIE, 2018. http://dx.doi.org/10.1117/12.2285374.

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Kawano, Takeshi, Satoshi Kako, Christian Kindel, and Yasuhiko Arakawa. "Annealing effect on spectral linewidth of hexagonal gallium nitride quantum dots." In 2007 International Nano-Optoelectronics Workshop. IEEE, 2007. http://dx.doi.org/10.1109/inow.2007.4302911.

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Juska, G., V. Dimastrodonato, L. O. Mereni, A. Gocalinska, and E. Pelucchi. "Tuning the optical properties of dilute nitride site controlled quantum dots." In THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4848478.

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Harikumar, Anjali, Catherine Bougerol, Fabrice Donatini, Edith Bellet-Amalric, Ioanna Dimkou, Quang Min-Thai, Christophe Dujardin, Stephen T. Purcell, and Eva Monroy. "Study of AlxGa1-xN/AlN (0 ≤ x ≤ 0.1) quantum dots for the fabrication of E-beam pumped UV emitters." In Gallium Nitride Materials and Devices XVI, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2021. http://dx.doi.org/10.1117/12.2576616.

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Sultana, Sadia, and Md Shah Alam. "Tunable bandgap and wavelength range of zinc blende indium gallium nitride quantum dots." In 2015 18th International Conference on Computer and Information Technology (ICCIT). IEEE, 2015. http://dx.doi.org/10.1109/iccitechn.2015.7488132.

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Sultana, Sadia, and Shah Alam. "Optimization of Indium Gallium Nitride quantum dots for absorbing light from solar spectra." In 2015 2nd International Conference on Electrical Information and Communication Technologies (EICT). IEEE, 2015. http://dx.doi.org/10.1109/eict.2015.7391983.

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Łepkowski, S. P., Marília Caldas, and Nelson Studart. "Influence of nonlinear elasticity on the stress field induced by nitride quantum dots in a subsurface layer." In PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors. AIP, 2010. http://dx.doi.org/10.1063/1.3295323.

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ElAfandy, Rami T., Tien Khee Ng, Yang Yang, Dongkyu Cha, Bei Zhang, Lan Zhao, Meng Zhang, Pallab Bhattacharya, and Boon S. Ooi. "Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots." In 2011 High Capacity Optical Networks and Enabling Technologies (HONET). IEEE, 2011. http://dx.doi.org/10.1109/honet.2011.6149817.

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You might also be interested in the extended bibliographies on the topic 'Quantum dots. Semiconductors. Gallium nitride' for particular source types:
Journal articles Dissertations / Theses
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