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Relevant bibliographies by topics / Quantum dots. Semiconductors. Gallium nitride / Dissertations / Theses

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Dissertations / Theses on the topic 'Quantum dots. Semiconductors. Gallium nitride'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 February 2022

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1

Olofsson, Karl-Johan. "Black-box optimization of simulated light extraction efficiency from quantum dots in pyramidal gallium nitride structures." Thesis, Linköpings universitet, Matematiska institutionen, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-162235.

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Microsized hexagonal gallium nitride pyramids show promise as next generation Light Emitting Diodes (LEDs) due to certain quantum properties within the pyramids. One metric for evaluating the efficiency of a LED device is by studying its Light Extraction Efficiency (LEE). To calculate the LEE for different pyramid designs, simulations can be performed using the FDTD method. Maximizing the LEE is treated as a black-box optimization problem with an interpolation method that utilizes radial basis functions. A simple heuristic is implemented and tested for various pyramid parameters. The LEE is sh

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2

Huang, Sa. "GaN-Based and High-Speed Metal-Semiconductor-Metal Photodetector: Growth and Device Structures for Integration." Diss., Available online, Georgia Institute of Technology, 2003:, 2003. http://etd.gatech.edu/theses/available/etd-11242003-173234/unrestricted/huang%5Fsa%5F200312%5Fphd.pdf.

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Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2004.<br>Ferguson, Ian T., Committee Member ; Rhodes, William T., Committee Member ; Wang, Zhonglin, Committee Member ; Brown, April S., Committee Chair ; Jokerst, Nan M., Committee Co-Chair ; Doolittle, W. Alan, Committee Member. Vita. Includes bibliographical references.

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3

Pan, Guiquan. "Colloidal gallium nitride quantum dots (GaN QDs) : synthesis and characterization /." View abstract, 2006. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&res_dat=xri:pqdiss&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&rft_dat=xri:pqdiss:3248456.

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4

Wang, Yingjuan. "Comprehensive optical spectroscopic investigations of GaN epilayers and InGaN/GaN quantum structures." Click to view the E-thesis via HKUTO, 2006. http://sunzi.lib.hku.hk/hkuto/record/B37090343.

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5

Bychkov, Andrey. "Quantum effects in artificial atoms." Thesis, University of Oxford, 2003. http://ora.ox.ac.uk/objects/uuid:93a68cff-9823-47d7-9505-b63806f1bbd4.

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This thesis contains a theoretical and experimental investigation of semiconductor quantum dots (artificial atoms). The first part presents a numerical study of spin effects in GaAs/AlAs modulation-doped quantum dots containing 0 to 50 electrons. A theoretical model is developed to calculate confinement potentials and ground-state electron density distributions using the Kohn-Sham local spin-density approximation. Spin polarization, defined as the difference between the up- and down-spin electron densities, is predicted to occur spontaneously in symmetric quantum dots and in quantum point cont

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6

Wen, Yuan, and 文苑. "Theoretical and experimental studies of electronic states in InAs/GaAsself-assembled quantum dots." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43224003.

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7

Wang, Yingjuan, and 王穎娟. "Comprehensive optical spectroscopic investigations of GaN epilayers and InGaN/GaN quantum structures." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2006. http://hub.hku.hk/bib/B37090343.

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8

Wen, Yuan. "Theoretical and experimental studies of electronic states in InAs/GaAs self-assembled quantum dots." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43224003.

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9

Park, Gyoungwon. "GaAs-based long-wavelength quantum dot lasers /." Digital version, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3008414.

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10

Wang, Hongjiang, and 王泓江. "Spectroscopic investigation of optical properties of GaN epilayers andInGaN/GaN quantum wells." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B29779911.

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11

Dufåker, Daniel, L. O. Mereni, Fredrik K. Karlsson, et al. "Exciton-phonon coupling in single quantum dots with different barriers." Linköpings universitet, Halvledarmaterial, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-67198.

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The coupling between longitudinal-optical (LO) phonons and neutral excitons in two different kinds of InGaAs pyramidal quantum dots embedded in either AlGaAs or GaAs barriers is experimentally examined. We find a slightly weaker exciton-LO-phonon coupling and increased linewidth of the phonon replicas for the quantum dots with GaAs barriers compared to the ones with AlGaAs barriers. These results, combined with the fact that the LO-phonon energy of the exciton is the same for both kinds of dots, are taken as evidence that the excitons mainly couple to LO-phonons within the QDs.<br>Original Pub

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12

Auzelle, Thomas. "Nanofils de GaN/AlN : nucléation, polarité et hétérostructures quantiques." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAY057/document.

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Usant de certaines conditions, la croissance épitaxiale de GaN sur un large panel de substrats donne lieu à une assemblée de nanofils. Cette géométrie filaire peut permettre la croissance d'hétérostructures libres de tous défauts cristallins étendus, ce qui les rendent attractives pour créer des dispositifs de hautes performances. En premier lieu, mon travail de thèse a visé à clarifier le mécanisme de nucléation auto-organisé des nanofils de GaN sur substrat de silicium. Dans ce but, une étude approfondie de la couche tampon d'AlN, déposée préalablement à la nucléation des nanofils, a été réa

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13

Davies, Matthew John. "Optical studies of InGaN/GaN quantum well structures." Thesis, University of Manchester, 2014. https://www.research.manchester.ac.uk/portal/en/theses/optical-studies-of-ingangan-quantum-well-structures(f6c6e59b-8366-44aa-b149-9338d3f03dc0).html.

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In this thesis I present and discuss the results of optical spectroscopy performed on InGaN/GaN single and multiple quantum well (QW) structures. I report on the optical properties of InGaN/GaN single and multiple QW structures, measured at high excitation power densities. I show a correlation exists between the reduction in PL efficiency at high excitation power densities, the phenomenon so-called ``efficiency-droop'', and a broadening of the PL spectra. I also show a distinct change in recombination dynamics, measured by time-resolved photoluminescence (PL), which occurs at the excitation po

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14

Ibrahim, Saber. "Synthesis of Functional Block Copolymers for use in Nano-hybrids." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2011. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-67435.

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Polystyrene block polyethyleneimine (PS-b-PEI) copolymer prepared by combining PS and poly(2-methyl-2-oxazoline) (PMeOx) segments together through two strategies. Furthermore, PMeOx block was hydrolysis to produce PEI block which linked with PS block. Macroinitiator route is one of these two ways to prepare PS-b-PEI copolymer. Polystyrene macroinitiator or poly(2-methyl-2-oxazoline) macroinitiator prepared through Nitroxide Mediate Radical Polymerization (NMRP) or Cationic Ring Opening Polymerization (CROP) respectively. Each macroinitiator has active initiated terminal group toward another bl

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15

Zallo, Eugenio. "Control of electronic and optical properties of single and double quantum dots via electroelastic fields." Doctoral thesis, Universitätsbibliothek Chemnitz, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-162870.

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Semiconductor quantum dots (QDs) are fascinating systems for potential applications in quantum information processing and communication, since they can emit single photons and polarisation entangled photons pairs on demand. The asymmetry and inhomogeneity of real QDs has driven the development of a universal and fine post-growth tuning technique. In parallel, new growth methods are desired to create QDs with high emission efficiency and to control combinations of closely-spaced QDs, so-called "QD molecules" (QDMs). These systems are crucial for the realisation of a scalable information process

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16

Arlery, Magali. "Etude par microscopie électronique à transmission de couches et structures semi-conductrices GaN/AlxGa(1-x)N." Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10047.

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Nous presentons une etude structurale de depots epais de gan sur alumine et d'heterostructures gan / al#xga#1#-#xn de basse dimensionnalite. Les systemes etudies ont ete elabores par epitaxie par jet moleculaire (mbe) ou par depot en phase vapeur d'organo-metalliques (mocvd). La technique d'investigation est la microscopie electronique a transmission, utilisee en modes conventionnel, haute resolution et faisceau convergent. La premiere partie de l'etude traite de la croissance optimisee de couches de gan sur substrat d'alumine. La polarite des depots est le parametre clef de cette croissance.

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17

Widmann, Frédéric. "Epitaxie par jets moléculaires de GaN, AlN, InN et leurs alliages : physique de la croissance et réalisation de nanostructures." Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10234.

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Ce travail a porte sur la croissance epitaxiale des nitrures d'elements iii gan, aln, et inn, en utilisant l'epitaxie par jets moleculaires assistee par plasma d'azote. Nous avons optimise les premiers stades de la croissance de gan ou aln sur substrat al#2o#3 (0001). Le processus utilise consiste a nitrurer la surface du substrat a l'aide du plasma d'azote, afin de la transformer en aln, puis a faire croitre une couche tampon d'aln ou de gan a basse temperature, avant de reprendre la croissance de gan ou aln a haute temperature (680 a 750c). Nous avons en particulier etudie les proprietes d'u

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18

Tremblay, Ronan. "Propriétés structurales, optiques et électriques de nanostructures et alliages à base de GaP pour la photonique intégrée sur silicium." Thesis, Rennes, INSA, 2018. http://www.theses.fr/2018ISAR0026/document.

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Ce travail de thèse porte sur les propriétés structurales, optiques et électriques de nanostructures et alliages à base de GaP pour la photonique intégrée sur silicium. Parmi les méthodes d’intégration des semi-conducteurs III-V sur Si, l’intérêt de l’approche GaP/Si est tout d’abord discuté. Une étude de la croissance et du dopage de l’AlGaP est présentée afin d’assurer le confinement optique et l’injection électrique dans les structures lasers GaP. Les difficultés d’activation des dopants n sont mises en évidence. Ensuite, les propriétés de photoluminescence des boites quantiques InGaAs/GaP

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19

Girardi, Tiago Illipronti 1986. "Efeito de interface nas propriedades ópticas de pontos quânticos de InP/GaAs." [s.n.], 2012. http://repositorio.unicamp.br/jspui/handle/REPOSIP/277762.

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Orientador: Fernando Iikawa<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin<br>Made available in DSpace on 2018-08-21T01:34:49Z (GMT). No. of bitstreams: 1 Girardi_TiagoIllipronti_M.pdf: 2091533 bytes, checksum: 1e5e58f3f5149c97c47c1bf44b7aa186 (MD5) Previous issue date: 2012<br>Resumo: Neste trabalho, estudamos o efeito de diferentes condições de interface de InP/GaAs nas propriedades ópticas de pontos quânticos auto-organizados, crescidos por epitaxia de feixe químico, no modo Stranskii-Krastanov. Espera-se que os pontos quânticos de InP/GaA

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20

Mahesh, Kumar *. "Group III-Nitride Epi And Nanostructures On Si(111) By Molecular Beam Epitaxy." Thesis, 2011. http://hdl.handle.net/2005/2408.

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The present work has been focused on the growth of Group III-nitride epitaxial layers and nanostructures on Si (111) substrates by plasma-assisted molecular beam epitaxy. Silicon is regarded as a promising substrate for III-nitrides, since it is available in large quantity, at low cost and compatible to microelectronics device processing. However, three-dimensional island growth is unavoidable for the direct growth of GaN on Si (111) because of the extreme lattice and thermal expansion coefficient mismatch. To overcome these difficulties, by introducing β-Si3N4 buffer layer, the yellow lumines

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21

Cao, Chuanshun Deppe Dennis G. "Carrier dynamics in quantum dot and GaAs-based quantum dot cascade laser." 2004. http://wwwlib.umi.com/cr/utexas/fullcit?p3143662.

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22

Cao, Chuanshun 1972. "Carrier dynamics in quantum dot and GaAs-based quantum dot cascade laser." 2004. http://hdl.handle.net/2152/12750.

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23

Inciong, Michelle R., and 蜜雪兒. "Improved Optical Properties in PAMAM Dendrimers and Gallium Nitride Using Graphene Quantum Dots." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/53483310406877742655.

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碩士<br>中原大學<br>物理研究所<br>104<br>Graphene is a novel 2D material composed of carbon molecules with strong mechanical features, remarkable thermal conductivity, and outstanding electrical properties. The excellent properties of graphene makes it a very powerful material that has been used and applied into numerous various applications. A 0D version of graphene called graphene quantum dots (GQDs) expands the application of graphene into a nanodimensional aspect. GQDs possess unique optical, electrical, and chemical properties attributed to their major structural components, which is the quantum con

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24

El, Afandy Rami. "Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots." Thesis, 2011. http://hdl.handle.net/10754/205810.

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Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes and blue laser diodes. Despite the current development, there are still technological problems that still impede the performance of such devices. Three-dimensional nanostructures are proposed to improve the electrical and thermal properties of III-nitride optical devices. This thesis consolidates the characterization results and unveils the unique p

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25

Huang, Hua Deppe Dennis G. "Theoretical study of GaAs-based quantum dot lasers and microcavity light emitting diodes." 2004. http://repositories.lib.utexas.edu/bitstream/handle/2152/2019/huangh042.pdf.

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26

Huang, Hua. "Theoretical study of GaAs-based quantum dot lasers and microcavity light emitting diodes." Thesis, 2004. http://hdl.handle.net/2152/2019.

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27

Shetty, Arjun. "Device Applications of Epitaxial III-Nitride Semiconductors." Thesis, 2015. http://etd.iisc.ernet.in/2005/3530.

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Through the history of mankind, novel materials have played a key role in techno- logical progress. As we approach the limits of scaling it becomes difficult to squeeze out any more extensions to Moore’s law by just reducing device feature sizes. It is important to look for an alternate semiconductor to silicon in order to continue making the progress predicted by Moore’s law. Among the various semiconductor options being explored world-wide, the III-nitride semiconductor material system has certain unique characteristics that make it one of the leading contenders.

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28

Zallo, Eugenio. "Control of electronic and optical properties of single and double quantum dots via electroelastic fields." Doctoral thesis, 2014. https://monarch.qucosa.de/id/qucosa%3A20217.

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Semiconductor quantum dots (QDs) are fascinating systems for potential applications in quantum information processing and communication, since they can emit single photons and polarisation entangled photons pairs on demand. The asymmetry and inhomogeneity of real QDs has driven the development of a universal and fine post-growth tuning technique. In parallel, new growth methods are desired to create QDs with high emission efficiency and to control combinations of closely-spaced QDs, so-called "QD molecules" (QDMs). These systems are crucial for the realisation of a scalable information process

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