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Journal articles on the topic 'Quantum dots. Semiconductors. Gallium nitride'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 February 2022

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1

Ahmad Fauzi, Dhiyauddin, Nahrul Khair Alang Md Rashid, Muhammad Rawi Mohamed Zin, and Nurul Fadzlin Hasbullah. "RADIATION PERFORMANCE OF GAN AND INAS/GAAS QUANTUM DOT BASED DEVICES SUBJECTED TO NEUTRON RADIATION." IIUM Engineering Journal 18, no. 1 (2017): 101–9. http://dx.doi.org/10.31436/iiumej.v18i1.653.

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In addition to their useful optoelectronics functions, gallium nitride (GaN) and quantum dots (QDs) based structures are also known for their radiation hardness properties. With demands on such semiconductor material structures, it is important to investigate the differences in reliability and radiation hardness properties of these two devices. For this purpose, three sets of GaN light-emitting diode (LED) and InAs/GaAs dot-in-a well (DWELL) samples were irradiated with thermal neutron of fluence ranging from 3Ã—1013 to 6Ã—1014 neutron/cm2 in PUSPATI TRIGA research reactor. The radiation perfo

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2

Murali, Amith K., Valerie J. Leppert, and Subhash H. Risbud. "Gallium nitride quantum dots in a silica xerogel matrix." Materials Science and Engineering: B 76, no. 3 (2000): 206–10. http://dx.doi.org/10.1016/s0921-5107(00)00452-9.

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3

Goodwin, Timothy J., Valerie J. Leppert, Subhash H. Risbud, Ian M. Kennedy, and Howard W. H. Lee. "Synthesis of gallium nitride quantum dots through reactive laser ablation." Applied Physics Letters 70, no. 23 (1997): 3122–24. http://dx.doi.org/10.1063/1.119109.

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4

Brown, J., C. Elsass, C. Poblenz, P. M. Petroff, and I. S. Speck. "Temperature Dependent Photoluminescence of MBE Grown Gallium Nitride Quantum Dots." physica status solidi (b) 228, no. 1 (2001): 199–202. http://dx.doi.org/10.1002/1521-3951(200111)228:1<199::aid-pssb199>3.0.co;2-w.

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5

Chaudhuri, Reet, Samuel James Bader, Zhen Chen, David A. Muller, Huili Grace Xing, and Debdeep Jena. "A polarization-induced 2D hole gas in undoped gallium nitride quantum wells." Science 365, no. 6460 (2019): 1454–57. http://dx.doi.org/10.1126/science.aau8623.

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A high-conductivity two-dimensional (2D) hole gas, analogous to the ubiquitous 2D electron gas, is desirable in nitride semiconductors for wide-bandgap p-channel transistors. We report the observation of a polarization-induced high-density 2D hole gas in epitaxially grown gallium nitride on aluminium nitride and show that such hole gases can form without acceptor dopants. The measured high 2D hole gas densities of about 5 × 1013 per square centimeters remain unchanged down to cryogenic temperatures and allow some of the lowest p-type sheet resistances among all wide-bandgap semiconductors. The

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6

Sinha, Godhuli, Subhendu K. Panda, Pratima Mishra, Dibyendu Ganguli, and Subhadra Chaudhuri. "Gallium nitride quantum dots in a nitrogen-bonded silica gel matrix." Journal of Physics: Condensed Matter 19, no. 34 (2007): 346209. http://dx.doi.org/10.1088/0953-8984/19/34/346209.

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7

Peres, M., A. J. Neves, T. Monteiro, et al. "Optical and Structural Properties of an Eu Implanted Gallium Nitride Quantum Dots/Aluminium Nitride Superlattice." Journal of Nanoscience and Nanotechnology 10, no. 4 (2010): 2473–78. http://dx.doi.org/10.1166/jnn.2010.1430.

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8

Burkhart, Casey C., Kinnari N. Patel, Jennifer G. G. Pagan, Phillip Barletta, and E. B. Stokes. "Surface Study of P-Type MBE Gallium Nitride Growth over CdSe Quantum Dots." ECS Transactions 3, no. 5 (2019): 469–75. http://dx.doi.org/10.1149/1.2357239.

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9

Kalden, J., C. Tessarek, K. Sebald, et al. "Electroluminescence from isolated single indium gallium nitride quantum dots up to 150 K." physica status solidi (a) 207, no. 6 (2010): 1428–30. http://dx.doi.org/10.1002/pssa.200983648.

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10

Dimos, Konstantinos, L'uboš Jankovič, Ioannis B. Koutselas, Michael A. Karakassides, Radek Zbořil, and Peter Komadel. "Low-Temperature Synthesis and Characterization of Gallium Nitride Quantum Dots in Ordered Mesoporous Silica." Journal of Physical Chemistry C 116, no. 1 (2011): 1185–94. http://dx.doi.org/10.1021/jp208011y.

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11

Patra, Saroj Kanta, and Stefan Schulz. "Exploring the Potential of c-Plane Indium Gallium Nitride Quantum Dots for Twin-Photon Emission." Nano Letters 20, no. 1 (2019): 234–41. http://dx.doi.org/10.1021/acs.nanolett.9b03740.

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12

Esken, Daniel, Stuart Turner, Christian Wiktor, Suresh Babu Kalidindi, Gustaaf Van Tendeloo, and Roland A. Fischer. "GaN@ZIF-8: Selective Formation of Gallium Nitride Quantum Dots inside a Zinc Methylimidazolate Framework." Journal of the American Chemical Society 133, no. 41 (2011): 16370–73. http://dx.doi.org/10.1021/ja207077u.

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13

Patra, Saroj Kanta, and Stefan Schulz. "Indium gallium nitride quantum dots: consequence of random alloy fluctuations for polarization entangled photon emission." Materials for Quantum Technology 1, no. 1 (2020): 015001. http://dx.doi.org/10.1088/2633-4356/abc48f.

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14

Castelletto, Stefania, Jovan Maksimovic, Tomas Katkus, Takeshi Ohshima, Brett C. Johnson, and Saulius Juodkazis. "Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors." Nanomaterials 11, no. 1 (2020): 72. http://dx.doi.org/10.3390/nano11010072.

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Color centers in silicon carbide are relevant for applications in quantum technologies as they can produce single photon sources or can be used as spin qubits and in quantum sensing applications. Here, we have applied femtosecond laser writing in silicon carbide and gallium nitride to generate vacancy-related color centers, giving rise to photoluminescence from the visible to the infrared. Using a 515 nm wavelength 230 fs pulsed laser, we produce large arrays of silicon vacancy defects in silicon carbide with a high localization within the confocal diffraction limit of 500 nm and with minimal

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15

Sieber, B. "Degradation of gallium nitride quantum dots under 10keV electron-beam injection at low and high excitation densities." Journal of Applied Physics 98, no. 8 (2005): 083520. http://dx.doi.org/10.1063/1.2106018.

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16

Liang, Zhi-Yu, Ming-Hui Huang, Si-Yi Guo, Yan Yu, Wei Chen, and Fang-Xing Xiao. "Nanoporous 2D semiconductors encapsulated by quantum-sized graphitic carbon nitride: tuning directional photoinduced charge transfer via nano-architecture modulation." Catalysis Science & Technology 9, no. 3 (2019): 672–87. http://dx.doi.org/10.1039/c8cy02283f.

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A reversed charge transfer pathway in photoredox catalysis has been achieved by rational structure engineering through electrostatically integrating g-C<sub>3</sub>N<sub>4</sub> quantum dots with nanoporous CdS nanosheets.

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17

Kim, Jaehyun, Sung-Min Kwon, Yeo Kyung Kang, et al. "A skin-like two-dimensionally pixelized full-color quantum dot photodetector." Science Advances 5, no. 11 (2019): eaax8801. http://dx.doi.org/10.1126/sciadv.aax8801.

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Direct full-color photodetectors without sophisticated color filters and interferometric optics have attracted considerable attention for widespread applications. However, difficulties of combining various multispectral semiconductors and improving photon transfer efficiency for high-performance optoelectronic devices have impeded the translation of these platforms into practical realization. Here, we report a low-temperature (<150°C) fabricated two-dimensionally pixelized full-color photodetector by using monolithic integration of various-sized colloidal quantum dots (QDs) and amorphous in

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18

Aouami, Asmae El, Laura M. Pérez, Kawtar Feddi, et al. "Influence of Geometrical Shape on the Characteristics of the Multiple InN/InxGa1−xN Quantum Dot Solar Cells." Nanomaterials 11, no. 5 (2021): 1317. http://dx.doi.org/10.3390/nano11051317.

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Solar cells that are based on the implementation of quantum dots in the intrinsic region, so-called intermediate band solar cells (IBSCs), are among the most widely used concepts nowadays for achieving high solar conversion efficiency. The principal characteristics of such solar cells relate to their ability to absorb low energy photons to excite electrons through the intermediate band, allowing for conversion efficiency exceeding the limit of Shockley–Queisser. IBSCs are generating considerable interest in terms of performance and environmental friendliness. However, there is still a need for

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19

Zhang, Kehao, and Joshua Robinson. "Doping of Two-Dimensional Semiconductors: A Rapid Review and Outlook." MRS Advances 4, no. 51-52 (2019): 2743–57. http://dx.doi.org/10.1557/adv.2019.391.

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ABSTRACTDoping, as a primary technique to modify semiconductor transport, has achieved tremendous success in the past decades. For example, boron and phosphorus doping of Si modulates the dominant carrier type between p-type and n-type, serving as the backbone for the modern microelectronic technologies. Doped III-V semiconducting systems exhibit phenomenal optoelectronic properties. Magnesium doped gallium nitride plays an important role to build efficient blue light-emitting diode (LED), which won Nobel Prize in physics in 2014. The rise of two-dimensional (2D) materials sheds light on their

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20

Nötzel, Richard. "InN/InGaN quantum dot electrochemical devices: new solutions for energy and health." National Science Review 4, no. 2 (2017): 184–95. http://dx.doi.org/10.1093/nsr/nww101.

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AbstractA review is given of the exceptional electrochemical performance of epitaxial InN/InGaN quantum dots (QDs) as photoelectrodes for solar hydrogen generation by water splitting, as biosensor transducers and as anion-selective electrodes, and they are also evaluated as supercapacitor electrodes. The performance is benchmarked against the best performances of other reported materials and nanostructures. A model based on the unique interplay of surface and quantum properties is put forward to understand the boost of catalytic activity and anion selectivity interlinking quantum nanostructure

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21

Chu, Shao-Yu, Hung-Yu Wang, Ching-Ting Lee, et al. "Improved Color Purity of Monolithic Full Color Micro-LEDs Using Distributed Bragg Reflector and Blue Light Absorption Material." Coatings 10, no. 5 (2020): 436. http://dx.doi.org/10.3390/coatings10050436.

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In this study, CdSe/ZnS core-shell quantum dots (QDs) with various dimensions were used as the color conversion materials. QDs with dimensions of 3 nm and 5 nm were excited by gallium nitride (GaN)-based blue micro-light-emitting diodes (micro-LEDs) with a size of 30 μm × 30 μm to respectively form the green and red lights. The hybrid Bragg reflector (HBR) with high reflectivity at the regions of the blue, green, and red lights was fabricated on the bottom side of the micro-LEDs to reflect the downward light. This could enhance the intensity of the green and red lights for the green and red QD

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22

Zhang, Lei, Chu-Hsiang Teng, Pei-Cheng Ku, and Hui Deng. "Charge-tunable indium gallium nitride quantum dots." Physical Review B 93, no. 8 (2016). http://dx.doi.org/10.1103/physrevb.93.085301.

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23

O'Donnell, K. P., R. W. Martin, M. E. White, et al. "Occurrence of ‘Accidental’ inn Quantum Dots in Indium Gallium Nitride/Gallium Nitride Heterostructures." MRS Proceedings 737 (2002). http://dx.doi.org/10.1557/proc-737-e2.3.

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ABSTRACTNakamura and co-workers were first to report the observation of spontaneously formed In-rich clusters in InGaN quantum wells (QW), using transmission electron microscopy (TEM) [1,2]. Some of the present authors have argued that the exceptional optical efficiency of nitride devices is due to the presence of nearly pure InN QD which form accidentally during crystal growth [3]. Pure InN QD with very small radius would emit light in the required spectral region, under the opposing effects of intrinsic electric fields and quantum confinement [4]. We have recently used extended X-ray absorpt

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24

Praharaj, Choudhury Jayant. "Variational Calculations of Donor Binding Energy in Rectangular Wurtzite Aluminium Gallium Nitride / Gallium Nitride Quantum Wires." MRS Proceedings 1040 (2007). http://dx.doi.org/10.1557/proc-1040-q02-04.

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AbstractWe present variational calculations of donor binding energy in rectangular wurtzite aluminium gallium nitride / gallium nitride quantum wires. We explicitly take into account the effect of spontaneous and piezoelectric polarization on the energy levels of donors in quantum wires. Wurtzite structure nitride semiconductors have spontaneous polarization even in the absence of externally applied electric fields. They also have large piezoelectric polarization when grown as pseudomorphic layers. The magnitude of both polarization components is of the order of 1013 electrons per cm2, and has

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25

Koike, M., N. Shibata, S. Yamasaki, et al. "Light-Emitting Devices Based on Gallium Nitride and Related Compound Semiconductors." MRS Proceedings 395 (1995). http://dx.doi.org/10.1557/proc-395-889.

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ABSTRACTAsymmetric double heterostructures (ADH) of AlGaN/GaInN/GaN blue light emitting diodes (LEDs) and GaInN/GaN multiple quantum well (MQW) LEDs were fabricated by metalorganic vapor phase epitaxy (MOVPE). The ADH LEDs had spectral emissions peaking at 450 nm and the luminous intensify was 2.5 cd at 20 mA The output power was 3.6 mW at 20mA and the external quantum efficiency was as high as 5.1 % at 20 mA. The GaInN/GaN MQW structure was grown successfully by MOVPE. Fine multi-layer structures 7 – 9 nm thick were detected by secondary ion mass spectroscopy and transmission electron microsc

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26

"Surface Study of p-type MBE Gallium Nitride Growth over CdSe Quantum Dots." ECS Meeting Abstracts, 2006. http://dx.doi.org/10.1149/ma2006-02/1/68.

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27

"Surface Study of P-Type MBE Gallium Nitride Growth over CdSe Quantum Dots." ECS Meeting Abstracts, 2006. http://dx.doi.org/10.1149/ma2006-02/28/1307.

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28

Morkoç, Hadis, Arup Neogi, and Martin Kuball. "Growth Structure, and Optical Properties of III-Nitride Quantum Dots." MRS Proceedings 789 (2003). http://dx.doi.org/10.1557/proc-789-n8.5.1/t6.5.1/z6.5.

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ABSTRACTQuasi-zero-dimensional (0D) semiconductors have been the subject of considerable interest which is stemmed from their unique physical properties which in turn are conducive to devices such as low threshold lasers and light polarization insensitive detectors, in addition to exciting basic physical phenomena. A laboratory analogue of 0D systems is semiconductor quantum dots (QDs) wherein the electronic states are spatially localized and the energy is fully quantized, loosely similar to an atomic system, making it more stable against thermal perturbations. In addition, the electronic dens

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29

Morkoç, Hadis, Arup Neogi, and Martin Kuball. "Growth Structure, and Optical Properties of III-Nitride Quantum Dots." MRS Proceedings 794 (2003). http://dx.doi.org/10.1557/proc-794-t6.5/n8.5/z6.5.

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ABSTRACTQuasi-zero-dimensional (0D) semiconductors have been the subject of considerable interest which is stemmed from their unique physical properties which in turn are conducive to devices such as low threshold lasers and light polarization insensitive detectors, in addition to exciting basic physical phenomena. A laboratory analogue of 0D systems is semiconductor quantum dots (QDs) wherein the electronic states are spatially localized and the energy is fully quantized, loosely similar to an atomic system, making it more stable against thermal perturbations. In addition, the electronic dens

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30

Morkoç, Hadis, Arup Neogi, and Martin Kuball. "Growth Structure, and Optical Properties of III-Nitride Quantum Dots." MRS Proceedings 799 (2003). http://dx.doi.org/10.1557/proc-799-z6.5/n8.51/t6.5.

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ABSTRACTQuasi-zero-dimensional (0D) semiconductors have been the subject of considerable interest which is stemmed from their unique physical properties which in turn are conducive to devices such as low threshold lasers and light polarization insensitive detectors, in addition to exciting basic physical phenomena. A laboratory analogue of 0D systems is semiconductor quantum dots (QDs) wherein the electronic states are spatially localized and the energy is fully quantized, loosely similar to an atomic system, making it more stable against thermal perturbations. In addition, the electronic dens

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31

Romero, M. J. "Scanning Tunneling Luminescence of Semiconductors." MRS Proceedings 836 (2004). http://dx.doi.org/10.1557/proc-836-l7.3.

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ABSTRACTWe review scanning tunneling luminescence (STL) – a photon emission spectroscopy based on scanning tunneling microscopy (STM) – and report on its application to photovoltaics. As part of this exploratory research, we have investigated CuInSe2 thin films, solar cells based on quantum dots, and dilute nitride compounds. STL is very attractive because it is capable of nanometer resolution, which is being demanded by the spectacular advancement of nanoscience and nanotechnology. In addition, STM offers both unipolar and bipolar excitation of the luminescence and, consequently, the transpor

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32

Praharaj, Choudhury Jayant. "Electron Energy Spectra of Single and Multiple AlGaN/GaN Quantum Dots with Spontaneous and Piezoelectric Polarization Effects." MRS Proceedings 1017 (2007). http://dx.doi.org/10.1557/proc-1017-dd08-30.

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AbstractWe present numerical calculations of electron spectra of single and multiple coupled quantum dots based on Aluminium Gallium Nitride / Gallium Nitride heterostructures. The effect of spontaneous and piezoelectric polarization on the confinement potential seen by the electrons is taken into account through bound interface sheet charges. We also calculated the spectra without polarization effects for reference. For some quantum dot dimensions, the energy eigenvalues shift by several hundred meVs due to the polarization charges. We calculate the spectra for the two cases of box-shaped and

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33

Cook, Charles F., Joseph H. Kwiatkowski, Doran D. Smith, and Harry L. Berkowitz. "Nanometer Lithography for Quantum Scale Devices." MRS Proceedings 76 (1986). http://dx.doi.org/10.1557/proc-76-61.

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ABSTRACTElectron-beam lithography that has the capability of writing high-resolution nanometer features in semiconductors will be required to fabricate next-generation quantum scale devices, such as nanometer gate mini-FET's, lateral quantum-well arrays, or metal grid radiators,which have feature sizes from 100 nm (1000 A) to 15 nm (150 A). A Philips EM 420T scanning transmission, electron microscope (STEM) has been modified to write nanometersize features in gallium arsenide. For this STEM we have developed a high-speed beam blanker and pattern generator (PG) that is resist speed limited. The

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34

Li, Jianyou, Arup Neogi, and Teruya Ishihara. "Resonant Energy Transfer due to Exciton Coupling in Hybrid Persovskites Conjugated to GaN Semiconductors." MRS Proceedings 955 (2006). http://dx.doi.org/10.1557/proc-0955-i15-07.

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ABSTRACTExciton-Exciton coupling in hybrid persovskites conjugated to GaN Semiconductors system has been studied. Excitons are strongly coupled in (C6H5C2H4NH3)2PbI4[bis(phenethyl-ammonium)tetraiodoplumbatel] (PEPI) is a hybrid inorganic-organic layered, with a perovskite structure quantum well (QW). The inorganic PbI4 monolayer is sandwiched between organic layers. The interaction between electron and hole forming the bound exciton is significantly stronger due to dielectric confinement. The lowest exciton binding energy is 220 meV, which is 20 times in comparison to GaAs. Gallium nitride (Ga

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