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Journal articles on the topic 'Quantum dots. Semiconductors'

Author: Grafiati

Published: 4 June 2021

Last updated: 8 February 2022

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1

Nozik, Arthur J., and Olga I. Mićić. "Colloidal Quantum Dots of III-V Semiconductors." MRS Bulletin 23, no. 2 (February 1998): 24–30. http://dx.doi.org/10.1557/s0883769400031237.

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Quantization effects in semiconductor structures were first demonstrated in the early 1970s in III-V quantum wells; these structures consisted of a thin epitaxial film of a smaller bandgap (Eg) semiconductor (e.g., GaAs, Eg = 1.42 eV) sandwiched between two epitaxial films of a larger bandgap semiconductor (e.g., Al0.3Ga0.7As, Eg = 2.0 eV). The conduction- and valence-band offsets of the two semiconductor materials produce potential barriers for electrons and holes, respectively. The smaller bandgap semiconductor constitutes the quantum-well region and the larger bandgap material the potential barrier region. If the film of the smaller bandgap material is sufficiently thin (thickness less than the de-Broglie wavelength of the charge carriers, which typically requires thicknesses less than about 300 Å for III-V semiconductors), then the charge carriers are confined in one dimension by the potential barriers, and quantization of the energy levels for both electrons and holes can occur (Figure 1).

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2

Xu, Yuanqing, Weibiao Wang, Zhexue Chen, Xinyu Sui, Aocheng Wang, Cheng Liang, Jinquan Chang, et al. "A general strategy for semiconductor quantum dot production." Nanoscale 13, no. 17 (2021): 8004–11. http://dx.doi.org/10.1039/d0nr09067k.

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3

O’Brien, Paul. "Quantum dots – Nanoparticulates of semiconductors." Current Opinion in Solid State and Materials Science 6, no. 4 (August 2002): 335. http://dx.doi.org/10.1016/s1359-0286(02)00096-7.

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4

Wang, Dan-Yan, Yu-Yun Yin, Chuan-Wei Feng, Rukhsana, and Yong-Miao Shen. "Advances in Homogeneous Photocatalytic Organic Synthesis with Colloidal Quantum Dots." Catalysts 11, no. 2 (February 18, 2021): 275. http://dx.doi.org/10.3390/catal11020275.

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Colloidal semiconductor quantum dots (QDs) have been proven to be excellent photocatalysts due to their high photostability, large extinction coefficients, and tunable optoelectrical properties, and have attracted extensive attention by synthetic chemists. These excellent properties demonstrate its promise in the field of photocatalysis. In this review, we summarize the recent application of QDs as homogeneous catalysts in various photocatalytic organic reactions. These meaningful works in organic transformations show the unique catalytic activity of quantum dots, which are different from other semiconductors.

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5

Jang, Youngjin, Arthur Shapiro, Faris Horani, Yaron Kauffmann, and Efrat Lifshitz. "Towards Low-Toxic Colloidal Quantum Dots." Zeitschrift für Physikalische Chemie 232, no. 9-11 (August 28, 2018): 1443–55. http://dx.doi.org/10.1515/zpch-2018-1148.

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Abstract Colloidal quantum dots (CQDs) are of enormous interest in the scientific and engineering fields. During the past few decades, significant efforts have been conducted in investigating Cd- and Pb-based CQDs, resulting in excellent photoluminescence (PL) properties and impressive performance in various applications. But the high toxicity of Cd and Pb elements pushed the scientific community to explore low-toxic CQDs excluding poisonous heavy metals. Several semiconductor materials with lower toxicity than Cd and Pb species have been proposed. This article presents a short overview of recent efforts involving low-toxic CQDs, focusing especially on IV–VI and III–V semiconductors which are active in the near- and short-wave-infrared (IR) regimes. Recent achievements pertinent to Sn- and In-based CQDs are highlighted as representative examples. Finally, limitations and future challenges are discussed in the review.

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6

Petroff, P. M., and G. Medeiros-Ribeiro. "Three-Dimensional Carrier Confinement in Strain-Induced Self-Assembled Quantum Dots." MRS Bulletin 21, no. 4 (April 1996): 50–54. http://dx.doi.org/10.1557/s088376940003534x.

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Recent technological and materials advances in semiconductors have brought about the possibility of producing heterostructures within which carriers are confined to an ultrasmall region of space (a few thousand atoms) by a potential barrier. When the dimensions of the confining potential are smaller than the electron wavelength (a few tens of nanometers), the semiconductor electronic and optical properties are drastically altered. In these so-called quantum structures, carrier energy levels are quantized and their energy depends on the confining-potential dimensions and magnitude.Some of these quantum structures have already found technological applications. For example the quantum-well (QW) semiconductor laser is part of every CD player. It is also widely used as the light source for intercontinental optical communications. The carrier confining potential in this case is provided by two wider bandgap semiconductor layers sandwiching a thin (3–20 nm) smaller bandgap semiconductor film. The carriers have two degrees of freedom within the QW. The QWs are grown by epitaxial deposition on a crystalline substrate. The substrate may or may not be lattice-matched with the epitaxial film. In some instances, a small lattice mismatch may be required to obtain the desired band-gap value for the QW material. These are the so-called pseudomorphically strained QW structures and devices.

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Zhang, Shuo, Yao Hu, and Qun Hao. "Advances of Sensitive Infrared Detectors with HgTe Colloidal Quantum Dots." Coatings 10, no. 8 (August 4, 2020): 760. http://dx.doi.org/10.3390/coatings10080760.

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The application of infrared detectors based on epitaxially grown semiconductors such as HgCdTe, InSb and InGaAs is limited by their high cost and difficulty in raising operating temperature. The development of infrared detectors depends on cheaper materials with high carrier mobility, tunable spectral response and compatibility with large-scale semiconductor processes. In recent years, the appearance of mercury telluride colloidal quantum dots (HgTe CQDs) provided a new choice for infrared detection and had attracted wide attention due to their excellent optical properties, solubility processability, mechanical flexibility and size-tunable absorption features. In this review, we summarized the recent progress of HgTe CQDs based infrared detectors, including synthesis, device physics, photodetection mechanism, multi-spectral imaging and focal plane array (FPA).

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8

Жуков, Н. Д., Д. В. Крыльский, М. И. Шишкин, and А. А. Хазанов. "Синтез, фото- и катодолюминесцентные свойства коллоидных квантовых точек CdSe, CdTe, PbS, InSb, GaAs." Физика и техника полупроводников 53, no. 8 (2019): 1103. http://dx.doi.org/10.21883/ftp.2019.08.48002.9037.

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AbstractQuantum dots of the group of wide-gap and narrow-gap semiconductors are synthesized and investigated under identical conditions, which makes it possible to perform the comparative analysis and modeling of the mechanisms of radiative recombination and luminescence, for which a stable exciton bond between the electron and hole has an important role. Exciton states are unstable for quantum dots without a shell and narrow-gap semiconductors, which leads to a substantial decrease in the probability of radiative recombination and, correspondingly, the quantum yield of luminescence. The experimental values of the spectral position of the luminescence maximum for quantum dots with clear manifestation of the exciton recombination mechanism noticeably shift to the long-wavelength region with respect to the calculated ones. In calculations and analysis, we use the effective electron mass for bulk semiconductors. The observed good correspondence of the calculated values of the maximum and spectral band with the experiment can mean that quantum dots have a long-range order crystalline structure similar to that one observed in single crystals and polycrystals.

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9

MIURA, N., Y. H. MATSUDA, and T. IKAIDA. "MEGAGAUSS CYCLOTRON RESONANCE IN SEMICONDUCTOR NANOSTRUCTURES AND DILUTED MAGNETIC SEMICONDUCTORS." International Journal of Modern Physics B 16, no. 20n22 (August 30, 2002): 3399–404. http://dx.doi.org/10.1142/s0217979202014565.

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We report the latest results of cyclotron resonance experiments on semiconductor nanostructures and diluted magnetic semiconductors (DMS) in very high magnetic fields up to 600 T produced by magnetic flux compression and the single turn coiled technique. Many new features were observed in the very high field range, such as characteristic behavior of low dimensional electrons, carrier dynamics or electron-electron interaction effects in quantum wells and quantum dot samples. In PbSe/PdEuTe quantum dots, which were regularly arranged to form an fcc superlattice, we observed an absorption peak with a splitting and a wavelength dependence of the absorption intensity. In DMS, such as CdMnTe and InMnAs, change of the carrier effective mass with Mn doping was studied in detail. We found anomalous mass increase with doping of magnetic ions. The amount of the observed mass increase cannot be explained by the k·p theory and suggests the importance of d-s or d-p hybridization.

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10

BHATT, R. N., and ERIK NIELSEN. "FERROMAGNETISM IN DOPED SEMICONDUCTORS WITHOUT MAGNETIC IONS." International Journal of Modern Physics B 22, no. 25n26 (October 20, 2008): 4595–606. http://dx.doi.org/10.1142/s0217979208050358.

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While ferromagnetism has been obtained above 100 K in doped semiconductors with magnetic ions such as Ga 1−x Mn x As , bulk doped semiconductors in the absence of magnetic ions have shown no tendency towards ferromagnetism. We re-examine the nonmagnetic doped semiconductor system at low carrier densities in terms of a generalized Hubbard model. Using exact diagonalization of the many-body Hamiltonian for finite clusters, we find that the system exhibits significant ferromagnetic tendencies at nanoscales, in a region of parameter space not accessible to bulk systems, but achievable in quantum dots and heterostructures. Implications for studying these effects in experimentally realizable systems, as well as the possibility of true (macroscopic) ferromagnetism in these systems is discussed.

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11

Takabayashi, K., N. Takahashi, I. Yagi, K. Yui, I. Souma, J. X. Shen, and Y. Oka. "Exciton luminescence in quantum dots and quantum wires of diluted magnetic semiconductors." Journal of Luminescence 87-89 (May 2000): 347–49. http://dx.doi.org/10.1016/s0022-2313(99)00371-3.

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12

RUFO, SALVADOR, MITRA DUTTA, and MICHAEL A. STROSCIO. "THE INFLUENCE OF ENVIRONMENTAL EFFECTS ON THE ACOUSTIC PHONON SPECTRA IN QUANTUM-DOT HETEROSTRUCTURES." International Journal of High Speed Electronics and Systems 12, no. 04 (December 2002): 1147–58. http://dx.doi.org/10.1142/s0129156402001964.

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We present calculations of the acoustic phonon spectra for a variety of quantum dots and consider the cases where the quantum dots are both free-standing and embedded in a selection of different matrix materials — including semiconductors, plastic, and water. These results go beyond previous calculations for free-standing quantum dots and demonstrate that the matrix material can have a large effect on the acoustic phonon spectrum and consequently on a variety of phonon-assisted transitions in quantum-dot heterostructures.

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13

Yang, B., and E. Pan. "Elastic Fields of Quantum Dots in Multilayered Semiconductors: A Novel Green’s Function Approach." Journal of Applied Mechanics 70, no. 2 (March 1, 2003): 161–68. http://dx.doi.org/10.1115/1.1544540.

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We present an efficient and accurate continuum-mechanics approach to predict the elastic fields in multilayered semiconductors due to buried quantum dots (QDs). Our approach is based on a novel Green’s function solution in anisotropic and linearly elastic multilayers, derived within the framework of generalized Stroh formalism and Fourier transforms, in conjunction with the Betti’s reciprocal theorem. By using this approach, the induced elastic fields due to QDs with general misfit strains are expressed as a volume integral over the QDs domains. For QDs with uniform misfit strains, the volume integral involved is reduced to a surface integral over the QDs boundaries. Further, for QDs that can be modeled as point sources, the induced elastic fields are then derived as a sum of the point-force Green’s functions. In the last case, the solution of the QD-induced elastic field is analytical, involving no numerical integration, except for the evaluation of the Green’s functions. As numerical examples, we have studied a multilayered semiconductor system of QDs made of alternating GaAs-spacer and InAs-wetting layers on a GaAs substrate, plus a freshly deposited InAs-wetting layer on the top. The effects of vertical and horizontal arrays of QDs and of thickness of the top wetting layer on the QD-induced elastic fields are examined and some new features are observed that may be of interest to the designers of semiconductor QD superlattices.

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14

Banaś, Aleksander, and Aleksander Muc. "Current Problems in Design of Quantum Dots Used in Semiconductors." Key Engineering Materials 542 (February 2013): 1–6. http://dx.doi.org/10.4028/www.scientific.net/kem.542.1.

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The analysis of optoelectromechanical properties of nanostructures in bandstructure engineering is discussed In the paper. It is demonstrated that the design of semiconductors is based on the solution of different forms of the Schrodinger (Helmmholtz) equation, dependant on the form of the Hamiltonian characterizing quantum effects. The formulation can lead to the linear or nonlinear eigenvalue problems. Then, the methods of solutions are also presented.

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15

Li, Xiaobao, Liping Liu, and Pradeep Sharma. "Geometrically nonlinear deformation and the emergent behavior of polarons in soft matter." Soft Matter 11, no. 41 (2015): 8042–47. http://dx.doi.org/10.1039/c5sm01925g.

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16

Jaworowski, Błażej, and Paweł Hawrylak. "Quantum Bits with Macroscopic Topologically Protected States in Semiconductor Devices." Applied Sciences 9, no. 3 (January 30, 2019): 474. http://dx.doi.org/10.3390/app9030474.

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Current computers are made of semiconductors. Semiconductor technology enables realization of microscopic quantum bits based on electron spins of individual electrons localized by gates in field effect transistors. This results in very fragile quantum processors prone to decoherence. Here, we discuss an alternative approach to constructing qubits using macroscopic and topologically protected states realized in semiconductor devices. First, we discuss a synthetic spin-1 chain realized in an array of quantum dots in a semiconductor nanowire or in a field effect transitor. A synthetic spin-1 chain is characterized by two effective edge quasiparticles with spin 1 / 2 protected from decoherence by topology and Haldane gap. The spin-1 / 2 quasiparticles of Haldane phase form the basis of a macroscopic singlet-triplet qubit. We compare the spin one chain with a Kitaev chain. Its edge states are Majorana zero modes, possessing non-Abelian fractional statistics. They can be used to encode the quantum information using the braiding processes, i.e., encircling one particle by another, which do not depend on the details of the particle trajectory and thus are protected from decoherence.

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17

Takahashi, Nobuhiro, Kazumasa Takabayashi, Izuru Souma, Jinxi Shen, and Yasuo Oka. "Magnetoluminescence in quantum dots and quantum wires of II–VI diluted magnetic semiconductors." Journal of Applied Physics 87, no. 9 (May 2000): 6469–71. http://dx.doi.org/10.1063/1.373425.

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18

Kuroda, Shinji, Yoshikazu Terai, Kôki Takita, Tadashi Takamasu, Giyuu Kido, Nobumasa Hasegawa, Takashi Kuroda, and Fujio Minami. "Self-organized quantum dots of diluted magnetic semiconductors Cd1−xMnxTe." Journal of Crystal Growth 214-215 (June 2000): 140–49. http://dx.doi.org/10.1016/s0022-0248(00)00051-8.

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19

Isaev, Leonid S., Arkady M. Satanin, and Yong S. Joe. "Optical properties of quantum dots produced from inverted-gap semiconductors." Semiconductor Science and Technology 22, no. 5 (March 28, 2007): 471–74. http://dx.doi.org/10.1088/0268-1242/22/5/003.

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20

Asahi, Hajime. "Self-Organized Quantum Wires and Dots in III - V semiconductors." Advanced Materials 9, no. 13 (1997): 1019–26. http://dx.doi.org/10.1002/adma.19970091305.

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21

Masikini, Milua, Peter M. Ndangili, Chinwe O. Ikpo, Usisipho Feleni, Samantha F. Douman, Unathi Sidwaba, Tesfaye Waryo, Priscilla Gloria Lorraine Baker, and Emmanuel Iheanyechukwu Iwuoha. "Optoelectronics of Stochiometrically Controlled Palladium Telluride Quantum Dots." Journal of Nano Research 40 (March 2016): 29–45. http://dx.doi.org/10.4028/www.scientific.net/jnanor.40.29.

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Water dispersed PdTe semiconducting nanocrystals were synthesized and stabilised with 3-mercaptopropionic acid (3-MPA). HRTEM studies revealed the formation of spherical nanoparticles of average size ~4 nm with good crystallinity. UV-visible spectral analysis and band gap measurements confirmed that the nanocrystals are indeed semiconductors. This semiconducting characteristic was supported by electrochemical impedance spectroscopy (EIS) data which gave Bode plots with absolute frequency and a maximum frequency phase angle values of 38.3° and 75°, respectively. Electroanalysis of the film on glassy carbon electrode (GCE) verified the retention of the ability of Pd to adsorb hydrogen on its surface as well as absorb hydrogen within its lattice.

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22

Haughey, Anne-Marie, Caroline Foucher, Benoit Guilhabert, Alexander L. Kanibolotsky, Peter J. Skabara, Glenn Burley, Martin D. Dawson, and Nicolas Laurand. "Hybrid organic semiconductor lasers for bio-molecular sensing." Faraday Discuss. 174 (2014): 369–81. http://dx.doi.org/10.1039/c4fd00091a.

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Bio-functionalised luminescent organic semiconductors are attractive for biophotonics because they can act as efficient laser materials while simultaneously interacting with molecules. In this paper, we present and discuss a laser biosensor platform that utilises a gain layer made of such an organic semiconductor material. The simple structure of the sensor and its operation principle are described. Nanolayer detection is shown experimentally and analysed theoretically in order to assess the potential and the limits of the biosensor. The advantage conferred by the organic semiconductor is explained, and comparisons to laser sensors using alternative dye-doped materials are made. Specific biomolecular sensing is demonstrated, and routes to functionalisation with nucleic acid probes, and future developments opened up by this achievement, are highlighted. Finally, attractive formats for sensing applications are mentioned, as well as colloidal quantum dots, which in the future could be used in conjunction with organic semiconductors.

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23

Kim, Hyun, and Bee Lyong Yang. "A polyaniline-coated ZnS/ZnO/FTO photoelectrode for improving photocorrosion prevention and visible light absorption." New Journal of Chemistry 43, no. 42 (2019): 16699–705. http://dx.doi.org/10.1039/c9nj04290c.

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24

Ивченко, Е. Л. "Магнитная циркулярная поляризация фотолюминесценции экситонов." Физика твердого тела 60, no. 8 (2018): 1503. http://dx.doi.org/10.21883/ftt.2018.08.46237.04gr.

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AbstractExperimental and theoretical studies of circular polarization of photoluminescence of excitons (MCPL) in semiconductors placed in an external magnetic field are reviewed. The advantage of the MCPL method is its relative simplicity. In particular, it does not require spectral resolution of the Zeeman sublevels of an exciton and may be applied to a wide class of objects having broad photoluminescence spectral lines or bands: in bulk semiconductors with excitons localized on the defects of the crystal lattice and composition fluctuations, in structures with quantum wells and quantum dots of types I and II, in two-dimensional transition metals dichalcogenides and quantum microcavities. The basic mechanisms of the magnetic circular polarization of luminescence are considered. It is shown that either known mechanisms should be modified or additional mechanisms of the MCPL should be developed to describe the polarized photoluminescence in newly invented nanosystems.

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25

Sukanya, D., D. Muthu Gnana Theresa Nathan, R. Mahesh, and P. Sagayaraj. "Comparative Studies on the Aqueous Synthesis and Biocompatibility of L-Cysteine and Mercaptopropionic Acid Capped CdSe/CdS/ZnS Core/Shell/Shell Quantum Dots." Journal of Nanoscience and Nanotechnology 19, no. 6 (June 1, 2019): 3334–42. http://dx.doi.org/10.1166/jnn.2019.16095.

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Quantum dots have now become the most important candidates and widely exploited as promising architectures for use as diagnostic and imaging agents in biomedicine and as semiconductors in the electronics industry. This article emphasizes on the aqueous synthesis of water soluble CdSe/CdS/ZnS core/shell/shell quantum dots with L-cysteine and mercaptopropionic acid as capping agent and their observed properties have been compared. The biocompatibility of the assynthesized quantum dots have also been analyzed through the cytotoxicity study using MTT assay. The structural, morphological and optical properties of these quantum dots have been examined through X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), UV-Visible absorption spectroscopy (UV-Vis) and Photoluminescence spectroscopy (PL). The capping of L-cysteine and mercaptopropionic acid on the quantum dots has been confirmed from Fourier transform infrared spectroscopy (FTIR). XRD results demonstrated the formation of hexagonal wurtzite structure for L-cysteine and cubic zinc blende structure for mercaptopropionic acid capped CdSe/CdS/ZnS quantum dots. From the optical measurements, it is observed that there is a considerable increase in the photoluminescence intensity of L-cysteine capped quantum dots than MPA. The HRTEM images revealed the narrow size distribution and in addition, L-cysteine capped quantum dots were found to be more biocompatible than mercaptopropionic acid capped quantum dots which would provide new opportunities for applications in bioimaging and biolabelling.

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26

Zhukov, N. D., M. V. Gavrikov, and D. V. Kryl’skii. "Single-Electron Transport in Colloidal Quantum Dots of Narrow-Gap Semiconductors." Technical Physics Letters 46, no. 9 (September 2020): 881–84. http://dx.doi.org/10.1134/s106378502009014x.

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27

Steffen, R., A. Forchel, T. L. Reinecke, T. Koch, M. Albrecht, J. Oshinowo, and F. Faller. "Single quantum dots as local probes of electronic properties of semiconductors." Physical Review B 54, no. 3 (July 15, 1996): 1510–13. http://dx.doi.org/10.1103/physrevb.54.1510.

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28

Dugaev, V. K., V. I. Litvinov, P. P. Petrov, O. A. Mironov, and M. Oszwaldowski. "Energy spectrum in quantum dots of IV-VI narrow-gap semiconductors." Semiconductor Science and Technology 8, no. 1S (January 1, 1993): S252—S254. http://dx.doi.org/10.1088/0268-1242/8/1s/055.

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29

Primus, Jean-Louis, Kang-Hoon Choi, Achim Trampert, Andrei M. Yakunin, Jacques Ferré, Joachim H. Wolter, Willem Van Roy, and Jo De Boeck. "Growth and characterization of In1−xMnxAs diluted magnetic semiconductors quantum dots." Journal of Crystal Growth 280, no. 1-2 (June 2005): 32–43. http://dx.doi.org/10.1016/j.jcrysgro.2005.03.027.

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30

Strassburg, M., A. Hoffmann, I. L. Krestnikov, and N. N. Ledentsov. "Optical and Structural Properties of Quantum Dots in Wide-Bandgap Semiconductors." physica status solidi (a) 183, no. 1 (January 2001): 99–104. http://dx.doi.org/10.1002/1521-396x(200101)183:1<99::aid-pssa99>3.0.co;2-a.

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31

Kim, M. J., L. C. Liu, S. H. Risbud, and R. W. Carpenter. "Nanostructure of semiconductor quantum dots in a borosilicate glass matrix by complementary use of HREM and AEM." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (August 1990): 728–29. http://dx.doi.org/10.1017/s0424820100176770.

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When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.

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32

Shin, Seung Won, Kwang-Ho Lee, Jin-Seong Park, and Seong Jun Kang. "Highly Transparent, Visible-Light Photodetector Based on Oxide Semiconductors and Quantum Dots." ACS Applied Materials & Interfaces 7, no. 35 (August 25, 2015): 19666–71. http://dx.doi.org/10.1021/acsami.5b04683.

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33

Lee, S., D. Y. Shin, H. S. Lee, J. Y. Lee, L. V. Titova, M. Kutrowski, J. K. Furdyna, and M. Dobrowolska. "Structural and magneto-optical studies on multiple quantum dots containing magnetic semiconductors." physica status solidi (c), no. 4 (July 2003): 1283–87. http://dx.doi.org/10.1002/pssc.200303069.

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34

ASAHI, H. "ChemInform Abstract: Self-Organized Quantum Wires and Dots in III-V Semiconductors." ChemInform 28, no. 52 (August 2, 2010): no. http://dx.doi.org/10.1002/chin.199752277.

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35

Einevoll, G. T., and Yia-Chung Chang. "Effective bond-orbital model for acceptor states in semiconductors and quantum dots." Physical Review B 40, no. 14 (November 15, 1989): 9683–97. http://dx.doi.org/10.1103/physrevb.40.9683.

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36

Yang, C. C., and S. Li. "Size Dependence of Optical Properties in Semiconductor Nanocrystals." Key Engineering Materials 444 (July 2010): 133–62. http://dx.doi.org/10.4028/www.scientific.net/kem.444.133.

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An extension of the classic thermodynamic theory to nanometer scale has generated a new interdisciplinary theory - nanothermodynamics. It is the critical tool for the investigation of the size-dependent physicochemical properties in nanocrystals. A simple and unified nanothermodynamic model for the melting temperature of nanocrystals has been established based on Lindemann’s criterion for the melting, Mott’s expression for the vibrational melting entropy, and Shi’s model for the size dependence of the melting point. The developed model has been extensively verified in calculating a variety of size- and dimensionality-dependent phase transition functions of nanocrystals. In this work, such a model was extended to explain the underlying mechanism behind the bandgap energy enhancement and Raman red shifts in semiconductor nanocrystals by (1) investigating the crystal size r, dimensionality d, and constituent stoichiometry x dependences of bandgap energies Eg in semiconductor quantum dots (QDs) and quantum wires (QWs); and (2) revealing the origin of size effect on the Raman red shifts in low dimensional semiconductors by considering the thermal vibration of atoms. For Eg, it is found that: (1) Eg increases with a decreasing r for groups IV, III-V and II-VI semiconductors and the quantum confinement effect is pronounced when r becomes comparable to the exciton radius; (2) the ratio of Eg(r, d)QWs/Eg(r, d)QDs is size-dependent, where Eg(r, d) denotes the change in bandgap energy; (3) the crystallographic structure (i.e. zinc-blende and wurtzite) effect on Eg of III-V and II-VI semiconductor nanocrystals is limited; and (4) for both bulk and nanosized III-V and II-VI semiconductor alloys, the composition effects on Eg are substantial, having a common nonlinear (bowing) relationship. For the Raman red shifts, the lower limit of vibrational frequency was obtained by matching the calculation results of the shifts with the experimental data of Si, InP, CdSe, CdS0.65Se0.35, ZnO, CeO2, as well as SnO2 nanocrystals. It shows that: (1) the Raman frequency (r) decreases as r decreases in both narrow and wide bandgap semiconductors; (2) with the same r, the sequence of size effects on (r) from strong to weak is nanoparticles, nanowires, and thin films; and (3) the Raman red shift is caused by the size-induced phonon confinement effect and surface relaxation. These results are consistent with experimental findings and may provide new insights into the size, dimensionality, and composition effects on the optical properties of semiconductors as well as fundamental understanding of high-performance nanostructural semiconductors towards their applications in optoelectronic devices.

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Takahashi, N., K. Takabayashi, E. Shirado, I. Souma, J. X. Shen, and Y. Oka. "Fabrication and optical study of quantum dots, quantum wires and quantum wells of II–VI diluted magnetic semiconductors." Journal of Crystal Growth 214-215 (June 2000): 183–86. http://dx.doi.org/10.1016/s0022-0248(00)00069-5.

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38

Zafar, Fateen, and Azhar Iqbal. "Indium phosphide nanowires and their applications in optoelectronic devices." Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 472, no. 2187 (March 2016): 20150804. http://dx.doi.org/10.1098/rspa.2015.0804.

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Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II–VI and I–VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In the present review, the work done on synthesis of III–V indium phosphide (InP) nanowires (NWs) using vapour- and solution-phase approaches has been discussed. Doping and core–shell structure formation of InP NWs and their sensitization using higher band gap semiconductor quantum dots is also reported. In the later section of this review, InP NW-polymer hybrid material is highlighted in view of its application as photodiodes. Lastly, a summary and several different perspectives on the use of InP NWs are discussed.

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Kadim, Akeel M. "Fabrication of Quantum Dots Light Emitting Device by Using CdTe Quantum Dots and Organic Polymer." Journal of Nano Research 50 (November 2017): 48–56. http://dx.doi.org/10.4028/www.scientific.net/jnanor.50.48.

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Cadmium telluride CdTe QDs was prepared by chemical reaction and used to fabricate electroluminescence quantum dot hybrid junction device. QD-LED was fabricated using TPD: PMMA/CdTe/Alq3 device which synthesized by phase segregation method. The hybrid white light emitting devices consists, of three-layers deposited successively on the ITO glass substrate; the first layer was of Tetra-Phenyl Diaminobiphenyl (TPD) polymer mixed with polymethyl methacrylate (PMMA) polymers, while the second layer was 0.5wt% of the (CdTe) QDs for hybrid device, whereas the third layer was Tris (8-hydroxyquinoline) aluminium (Alq3). The optical properties of CdTe QDs were considered by UV-Vis. and photoluminescence (PL) spectrometer. The results show that the prepared QDs were nanocrystalline with defects formation. The Eg calculated from PL were 2.25 eV for Cadmium telluride CdTe QDs was prepared by chemical reaction and used to fabricate electroluminescence quantum dot hybrid junction device. QD-LED was fabricated using TPD: PMMA/CdTe/Alq3device which synthesized by phase segregation method. The hybrid white light emitting devices consists, of three-layers deposited successively on the ITO glass substrate; the first layer was of Tetra-Phenyl Diaminobiphenyl (TPD) polymer mixed with polymethyl methacrylate (PMMA) polymers, while the second layer was 0.5wt% of the (CdTe) QDs for hybrid device, whereas the third layer was Tris (8-hydroxyquinoline) aluminium (Alq3). The optical properties of CdTe QDs were measuredby UV-Vis. and photoluminescence (PL) spectrometer. The results show that the prepared QDs were nanocrystalline with defects formation. The Eg calculated from PL were 2.25 eV for CdTe QDs. The generated white light properties with acceptable efficiency using confinement effect that makes the energy gap larger, thus the direction of the light sites are toward the center of white light color. The organic light emitting device (OLED) wasconsidered by room temperature PL and electroluminescence (EL). Current-voltage (I–V) characteristics indicate that the output current is good compared to the few voltage (6 V) used which gives good results to get a generation of white light. The electroluminescence (EL) spectrum of hybrid deviceshows a wide emission band covering the range from 350 - 700 nm. The emissions causing this white luminescence were identified depending on the chromaticity coordinates (CIE 1931) was found (x=0.32, y=0.33). The correlated color temperature (CCT) was found to be about 5886 K. Fabrication of EL-devices from semiconductors material (CdTe QDs) between two layers organic polymer (TPD) and organic molecules (Alq3) were effective in white light generation. The recombination processes and I-V characteristics gives rises to the output current is good compared to the few voltages used which gives good results to become a generation of light.

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40

DUTTA, M., M. A. STROSCIO, and K. W. KIM. "RECENT DEVELOPMENTS ON ELECTRON-PHONON INTERACTIONS IN STRUCTURES FOR ELECTRONIC AND OPTOELECTRONIC DEVICES." International Journal of High Speed Electronics and Systems 09, no. 01 (March 1998): 281–312. http://dx.doi.org/10.1142/s0129156498000130.

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As device dimensions in electronic and optoelectronic devices are reduced, the characteristics and interactions of dimensionally-confined longitudinal-optical (LO) and acoustic phonons deviate substantially from those of bulk semiconductors. Furthermore, as würtzite materials are applied increasingly in electronic and optoelectronic devices it becomes more important to understand the phonon modes in such systems. This account emphasizes the properties of bulk optical phonons in würtzite structures, the properties of LO-phonon modes and acoustic-phonon modes arising in polar-semiconductor quantum wells, superlattices, quantum wires and quantum dots, with a variety of cross sectional geometries and, lastly, the properties of optical phonons in würtzite materials as predicted by the dielectric continuum model. Emphasis is placed on the dielectric continuum and elastic continuum models of bulk, confined and interface phonons. This article emphasizes device applications of confined phonons in GaAs-based systems and provides a brief discussion of carrier-LO-phonon interactions in bulk würtzite structures. This account also includes discussions on the use of metal-semiconductor heterointerfaces to reduce scattering and on the role of phonons in Fröhlich, deformation and piezoelectric interactions in electronic and optoelectronic structures; specific device applications high-lighted here include quantum cascade lasers, mesoscopic devices, thermoelectric devices and optically-pumped resonant intersubband lasers.

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Prokes, S. M., and Kang L. Wang. "Novel Methods of Nanoscale Wire Formation." MRS Bulletin 24, no. 8 (August 1999): 13–19. http://dx.doi.org/10.1557/s0883769400052842.

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In recent years, tremendous interest has been generated in the fabrication and characterization of nanoscale structures such as quantum dots and wires. For example, there is interest in the electronic, magnetic, mechanical, and chemical properties of materials with reduced dimensions. In the case of nanoscale semiconductors, quantum effects are expected to play an increasingly prominent role in the physics of nanostructures, and a new class of electronic and optoelectronic devices may be possible. In addition to new and interesting physics, the formation and characterization of nanoscale magnetic structures could result in higher-density storage capacity in hard disks and optical-recording media. Likewise, phonon confinement leads to a drastic reduction of thermal conductivity and can be used to improve the performance of thermoelectric devices.In 1980, H. Sakaki predicted theoretically that quantum wires may have applications in high-performance transport devices, due to their sawtoothlike density of states (E1/2), where E is the electron energy. Since then, most quantum wires have been made by fabricating a gratinglike gate on top of a two-dimensional (2D) electron gas contained in a semiconductor heterojunction or in metal-oxide-semiconductor structures. By applying a negative gate voltage to the system, its structure can be changed from a 2D to a one-dimensional (1D) regime, where electron confinement is achieved by an electrostatic confining potential. It was not until recently that “physical” semiconductor quantum wires with the demonstrated 1D confinement by physical boundaries began to be fabricated.

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WEISBUCH, C., H. BENISTY, and R. HOUDRÉ. "MICROCAVITIES, PHOTONIC CRYSTALS AND SEMICONDUCTORS: FROM BASIC PHYSICS TO APPLICATIONS IN LIGHT EMITTERS." International Journal of High Speed Electronics and Systems 10, no. 01 (March 2000): 339–54. http://dx.doi.org/10.1142/s0129156400000362.

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Photon confined systems in the form of microcavities and photonic crystals overcome the main stumbling block to high efficiency light emitters, i.e. the extraction of photons from high-index materials. On the more fundamental side, they lead to the modification of lifetime for sharp transitions (the Purcell effect), recently observed for quantum dots in micropillars, and to strong light-matter coupling for quantum wells embedded in planar microcavities.

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43

Жуков, Н. Д., М. И. Шишкин, and А. Г. Роках. "Плазменное отражение в мультизеренном слое узкозонных полупроводников." Письма в журнал технической физики 44, no. 8 (2018): 102. http://dx.doi.org/10.21883/pjtf.2018.08.45973.17010.

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AbstractQualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15–25 μm were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grade diamond powder. The most narrow-bandgap semiconductor InSb (intrinsic absorption edge ∼7 μm) is characterized by an absorption band at 2.1–2.3 μm, which is interpreted in terms of the model of optical excitation of electrons coupled by the Coulomb interaction. The spectra of a multigrain layer of chemically deposited PbS nanoparticles (50–70 nm) exhibited absorption maxima at 7, 10, and 17 μm, which can be explained by electron transitions obeying the energy-quantization rules for quantum dots.

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44

Kortshagen, Uwe, Rebeccah Anthony, Ryan Gresback, Zachary Holman, Rebekah Ligman, Chin-Yi Liu, Lorenzo Mangolini, and Stephen A. Campbell. "Plasma synthesis of group IV quantum dots for luminescence and photovoltaic applications." Pure and Applied Chemistry 80, no. 9 (January 1, 2008): 1901–8. http://dx.doi.org/10.1351/pac200880091901.

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The unique ability of nonthermal plasmas to form high-quality nanocrystals (NCs) of covalently bonded semiconductors, including the group IV elements silicon (Si) and germanium (Ge), has been extensively demonstrated over the past few years. Recently, plasma processing was also extended to the surface functionalization of NCs, imparting further functionalities to plasma-produced NCs such as solution-processability or the passivation of electronic surface states. This paper focuses on the synthesis and surface functionalization of Si- and Ge-NCs, and on their application in luminescent and photovoltaic devices.

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45

Djotyan, A. P., A. A. Avetisyan, and E. M. Kazaryan. "Interband Light Absorption in Semiconductor Quantum Dots Connected with the Charged and Neutral Exciton - Donor Complexes." Key Engineering Materials 277-279 (January 2005): 893–98. http://dx.doi.org/10.4028/www.scientific.net/kem.277-279.893.

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The interband light absorption in spherical quantum dot (QD) of semiconductors connected with the charged and neutral exciton-donor complexes are studied theoretically. The oscillator strength for interband optical transition from valence band to the ground state of excitondonor complex in spherical QD has been investigate. The calculations were performed in the cases of infinite and finite potential barrier of QD. The dependences of the oscillator strength on the radius of the QD were obtained. It was shown that the quantum confinement gives rise a giant oscillator strength per impurity.

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46

You, Hyung Ryul, Jin Young Park, Duck Hoon Lee, Younghoon Kim, and Jongmin Choi. "Recent Research Progress in Surface Ligand Exchange of PbS Quantum Dots for Solar Cell Application." Applied Sciences 10, no. 3 (February 2, 2020): 975. http://dx.doi.org/10.3390/app10030975.

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Colloidal quantum dots (CQDs) are considered as next-generation semiconductors owing to their tunable optical and electrical properties depending on their particle size and shape. The characteristics of CQDs are mainly governed by their surface chemistry, and the ligand exchange process plays a crucial role in determining their surface states. Worldwide studies toward the realization of high-quality quantum dots have led to advances in ligand exchange methods, and these procedures are usually carried out in either solid-state or solution-phase. In this article, we review recent advances in solid-state and solution-phase ligand exchange processes that enhance the performance and stability of lead sulfide (PbS) CQD solar cells, including infrared (IR) CQD photovoltaics.

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Thangaraj, Baskar, Pravin R. Solomon, and Srinivasan Ranganathan. "Synthesis of Carbon Quantum Dots with Special Reference to Biomass as a Source - A Review." Current Pharmaceutical Design 25, no. 13 (August 16, 2019): 1455–76. http://dx.doi.org/10.2174/1381612825666190618154518.

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Quantum dots (QDs) have received much attention due to their extraordinary optical application in medical diagnostics, optoelectronics and in energy storage devices. The most conventional QDs are based on semiconductors that comprise heavy metals whose applications are limited due to toxicity and potential environmental hazard. Of late, researchers are focusing on carbon-based quantum dots, which have recently emerged as a new family of zero-dimensional nanostructured materials. They are spherical in shape with a size below 10 nm and exhibit excitation-wavelength-dependent photoluminescence (PL). Carbon quantum dots (CQDs) have unique optical, photoluminescence and electrochemical properties. They are environment-friendly with low toxicity as compared to toxic heavy metal quantum dots. Generally, CQDs are derived from chemical precursor materials, but recently researchers have focused their attention on the production of CQDs from waste biomass materials due to the economic and environmental exigency. In this review, recent advances in the synthesis of CQDs from waste biomass materials, functionalization and modulation of CQDs and their potential application of biosensing are focused. This review also brings out some challenges and future perspectives for developing smart biosensing gadgets based on CQDs.

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Huang, Hao, August Dorn, Gautham P. Nair, Vladimir Bulović, and Moungi G. Bawendi. "Bias-Induced Photoluminescence Quenching of Single Colloidal Quantum Dots Embedded in Organic Semiconductors." Nano Letters 7, no. 12 (December 2007): 3781–86. http://dx.doi.org/10.1021/nl072263y.

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López-Richard, V., S. J. Prado, G. E. Marques, C. Trallero-Giner, and A. M. Alcalde. "Manipulation of g-factor in diluted magnetic semiconductors quantum dots: Optical switching control." Applied Physics Letters 88, no. 5 (January 30, 2006): 052101. http://dx.doi.org/10.1063/1.2168499.

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Vengrenovich, R. D., B. V. Ivanskii, S. V. Yarema, I. I. Pan’ko, M. O. Stasyk, and A. V. Moskalyuk. "Interrelations between technology for obtaining quantum dots and optoelectronic properties of semiconductors [Invited]." Applied Optics 53, no. 10 (February 5, 2014): B87. http://dx.doi.org/10.1364/ao.53.000b87.

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