Relevant bibliographies by topics / Quantum dots. Spintronics

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Quantum dots. Spintronics'

Author: Grafiati
Published: 4 June 2021
Last updated: 5 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Quantum dots. Spintronics.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Quantum dots. Spintronics"

1

Rokhinson, Leonid P., Lingue J. Guo, Steven Y. Chou, and Daniel C. Tsui. "Spintronics with Si quantum dots." Microelectronic Engineering 63, no. 1-3 (August 2002): 147–53. http://dx.doi.org/10.1016/s0167-9317(02)00609-3.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Droth, Matthias, and Guido Burkard. "Spintronics with graphene quantum dots." physica status solidi (RRL) - Rapid Research Letters 10, no. 1 (July 27, 2015): 75–90. http://dx.doi.org/10.1002/pssr.201510182.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Burkard, Guido, Hans-Andreas Engel, and Daniel Loss. "Spintronics and Quantum Dots for Quantum Computing and Quantum Communication." Fortschritte der Physik 48, no. 9-11 (September 2000): 965–86. http://dx.doi.org/10.1002/1521-3978(200009)48:9/11<965::aid-prop965>3.0.co;2-v.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Wood, Jonathan. "Charging up magnetic quantum dots for spintronics." Materials Today 9, no. 5 (May 2006): 13. http://dx.doi.org/10.1016/s1369-7021(06)71479-1.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Service, R. F. "PHYSICS: Quantum Dots Chemically Wired for Spintronics." Science 301, no. 5633 (August 1, 2003): 580. http://dx.doi.org/10.1126/science.301.5633.580.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Droth, Matthias, and Guido Burkard. "ChemInform Abstract: Spintronics with Graphene Quantum Dots." ChemInform 47, no. 10 (February 2016): no. http://dx.doi.org/10.1002/chin.201610267.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Engel, Hans-Andreas, Patrik Recher, and Daniel Loss. "Electron spins in quantum dots for spintronics and quantum computation." Solid State Communications 119, no. 4-5 (July 2001): 229–36. http://dx.doi.org/10.1016/s0038-1098(01)00110-7.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Leburton, Jean-Pierre, Satyadev Nagaraja, Philippe Matagne, and Richard M. Martin. "Spintronics and exchange engineering in coupled quantum dots." Microelectronics Journal 34, no. 5-8 (May 2003): 485–89. http://dx.doi.org/10.1016/s0026-2692(03)00080-6.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Sukhorukov, E. V., and D. Loss. "Spintronics and Spin-Based Qubits in Quantum Dots." physica status solidi (b) 224, no. 3 (April 2001): 855–62. http://dx.doi.org/10.1002/(sici)1521-3951(200104)224:3<855::aid-pssb855>3.0.co;2-1.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Poornaprakash, B., U. Chalapathi, P. T. Poojitha, S. V. Prabhakar Vattikuti, and Si-Hyun Park. "CdS:Eu quantum dots for spintronics and photocatalytic applications." Journal of Materials Science: Materials in Electronics 30, no. 9 (March 21, 2019): 8220–25. http://dx.doi.org/10.1007/s10854-019-01137-y.

Full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "Quantum dots. Spintronics"

1

Torresani, Patrick. "Hole quantum spintronics in strained germanium heterostructures." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAY040/document.

Full text
Abstract:
Le travail exposé dans cette thèse de doctorat présente des expériences à basse température dans le domaine de la spintronique quantique sur des hétérostructures à base de germanium. Tout d’abord, les avantages attendus du germaniumpour la spintronique quantique sont exposés, en particulier la faible interaction hyperfine et le fort couplage spin-orbite théoriquement prédits dans le Ge. Dans un second chapitre, la théorie des boites quantiques et systèmes à double boite sont détaillés, en se focalisant sur les concepts nécessaires à la compréhension des expériences décrites plus tard, c’est-à-dire les effets de charge dans les boites quantiques et double boites, ainsi que le blocage de spin de Pauli. Le troisième chapitre s’intéresse à l’interaction spin-orbite. Son origine ainsi que ses effets sur les diagrammes d’énergie de bande sont discutés. Ce chapitre se concentre ensuite sur les conséquences de l’interaction spin-orbite spécifiques aux gaz bidimensionnels de trous dans des hétérostructures de germanium, c’est-à-dire l’interaction spin-orbite Rashba, le mécanisme de relaxation de spin D’Yakonov-Perel ainsi que l’antilocalisation faible.Le chapitre quatre présente des mesures effectuées sur des nanofils coeur coquillede Ge/Si. Dans ces nanofils une boite quantique se forme naturellement et celui-ci est étudié. Un système à double boite quantiques est ensuite formé par utilisation de grilles électrostatiques, révélant ainsi du blocage de spin de Pauli.Dans le cinquième chapitre sont détaillés des mesures demagneto-conductance de gas de trous bidimensionnels dans des hétérostructures de Ge/SiGe contraints dont le puit quantique se situe à la surface. Ces mesuresmontrent de l’antilocalisation faible. Les temps de transport caractéristiques sont extraits ainsi que l’énergie de séparation des trous 2D par ajustement de courbe de la correction à la conductivité due à l’antilocalisation. De plus, les mesures montrent une suppression de l’antilocalisation par un champ magnétique parallèle au puit quantique. Cet effet est attribué à la rugosité de surface ainsi qu’à l’occupation virtuelle de sous-bandes inoccupées.Finalement, le chapitre six présente des mesures de quantisation de la conductancedans des hétérostructures de Ge/SiGe contraints dont le puit quantique est enterré. Tout d’abord, l’hétérostructure est caractérisée grâce à des mesures de magneto-conductance dans une barre de Hall. Ensuite, un second échantillon dessiné spécialement pour la réalisation de points de contact quantiques est mesuré. Celui-ci montre des marches de conductance. La dépendance en champ magnétique de ces marches est mesurée, permettant ainsi une extraction du facteur gyromagnétique de trous lourds dans du germanium
This thesis focuses on low temperature experiments in germaniumbased heterostructure in the scope of quantumspintronic. First, theoretical advantages of Ge for quantum spintronic are detailed, specifically the low hyperfine interaction and strong spin orbit coupling expected in Ge. In a second chapter, the theory behind quantum dots and double dots systems is explained, focusing on the aspects necessary to understand the experiments described thereafter, that is to say charging effects in quantum dots and double dots and Pauli spin blockade. The third chapter focuses on spin orbit interaction. Its origin and its effect on energy band diagrams are detailed. This chapter then focuses on consequences of the spin orbit interaction specific to two dimensional germaniumheterostructure, that is to say Rashba spin orbit interaction, D’Yakonov Perel spin relaxation mechanism and weak antilocalization.In the fourth chapter are depicted experiments in Ge/Si core shell nanowires. In these nanowire, a quantumdot formnaturally due to contact Schottky barriers and is studied. By the use of electrostatic gates, a double dot system is formed and Pauli spin blockade is revealed.The fifth chapter reports magneto-transport measurements of a two-dimensional holegas in a strained Ge/SiGe heterostructure with the quantum well laying at the surface, revealing weak antilocalization. By fitting quantumcorrection to magneto-conductivity characteristic transport times and spin splitting energy of 2D holes are extracted. Additionally, suppression of weak antilocalization by amagnetic field parallel to the quantum well is reported and this effect is attributed to surface roughness and virtual occupation of unoccupied subbands.Finally, chapter number six reportsmeasurements of quantization of conductance in strained Ge/SiGe heterostructure with a buried quantumwell. First the heterostructure is characterized by means ofmagneto-conductance measurements in a Hall bar device. Then another device engineered specifically as a quantum point contact is measured and displays steps of conductance. Magnetic field dependance of these steps is measured and an estimation of the g-factor for heavy holes in germanium is extracted
APA, Harvard, Vancouver, ISO, and other styles
2

Pramanik, Sandipan. "Spin Polarized Transport in Nanoscale Devices." VCU Scholars Compass, 2006. http://scholarscompass.vcu.edu/etd/1092.

Full text
Abstract:
The ultimate goal in the rapidly burgeoning field of spintronics is to realize semiconductor-based devices that utilize the spin degree of freedom of a single charge carrier (electron or hole) or an ensemble of such carriers to achieve novel and/or enhanced device functionalities such as spin based light emitting devices, spin transistors and femto-Tesla magnetic field sensors. These devices share a common feature: they all rely on controlled transport of spins in semiconductors. A prototypical spintronic device has a transistor-like configuration in which a semiconducting channel is sandwiched between two contacts (source and drain) with a gate electrode sitting on top of the channel. Unlike conventional charge-based transistors, the source electrode of a spin transistor is a ferromagnetic (or half-metallic) material which injects spin polarized electrons in the channel. During transit, the spin polarizations of the electrons are controllably rotated by a gate electric field mediated spin-orbit coupling effect. The drain contact is ferromagnetic (or half-metallic) as well and the transmission probability of an electron through this drain electrode depends on the relative orientation of electron spin polarization and the (fixed) magnetization of the drain. When the spins of the electrons are parallel to the drain magnetization, they are transmitted by the drain resulting in a large device current (ON state of spin FET). However, these electrons will be completely blocked if their spins are antiparallel to the drain magnetization, and ideally, in this situation device current will be zero (OFF state of spinFET). Thus, if we vary the gate voltage, we can modulate the channel current by controlling the spin orientations of the electrons with respect to the drain magnetization. This is how transistor action is realized (Datta-Das model). However, during transport, electrons' velocities change randomly with time due to scattering and hence different electrons experience different spin-orbit magnetic fields. As a result, even though all electrons start their journey with identical spin orientations, soon after injection spins of different electrons point along different directions in space. This randomization of initial spin polarization is referred to as spin relaxation and this is detrimental to the spintronic devices. In particular, for Datta-Das transistor, this will lead to inefficient gate control and large leakage current in the OFF state of the spinFET. The aim of this work is to understand various spin relaxation processes that are operative in semiconductor nanostructures and to indicate possible ways of minimizing them. The theoretical aspect of this work (Chapters 2-5) focuses on the D'yakonov-Perel' process of spin relaxation in a semiconductor quantum wire. This process of spin relaxation occurs because during transport electron spin precesses like a spinning top about the spin-orbit magnetic field. We show that the conventional drift-diffusion model of spin transport, which has been used extensively in literature, completely breaks down in case of a quantum confined system (e.g. a quantum wire). Our approach employs a semi-classical model which couples the spin density matrix evolution with the Boltzmann transport equation. Using this model we have thoroughly studied spin relaxation in a semiconductor quantum wire and identified several inconsistencies of the drift-diffusion formalism.The experimental side of this work (Chapters 6-8) deals with two different issues: (a) performing spin transport experiments in order to extract spin relaxation length and time in various materials (e.g. Cu, Alq3) under one-dimensional confinement, and (b) measurement of the ensemble spin dephasing time in self-assembled cadmium sulfide quantum dots using electron spin resonance technique. The spin transport experiment, as described in Chapter 7 of this dissertation, shows that the spin relaxation time in organic semiconductor (Alq3) is extremely long, approaching a few seconds at low temperatures. Alq3 is the chemical formula of tris- 8 hydroxy-quinoline aluminum, which is a small molecular weight organic semiconductor. This material is extensively used in organic display industry as the electron transport and emission layer in green organic light emitting diodes. The long spin relaxation time in Alq3 makes it an ideal platform for spintronics. This also indicates that it may be possible to realize spin based organic light emitting diodes which will have much higher internal quantum efficiency than their conventional non-spin counterparts. From spin transport experiments mentioned above we have also identified Elliott-Yafet mode as the dominant spin relaxation mechanism operative in organic semiconductors. Electron spin resonance experiment performed on self-assembled quantum dots (Chapter 8) allows us to determine the ensemble spin dephasing time (or transverse spin relaxation time) of electrons confined in these systems. In quantum dots electrons are strongly localized in space. Surprisingly, the ensemble spin dephasing time shows an increasing trend as we increase temperature. The most likely explanation for this phenomenon is that spin dephasing in quantum dots (unlike quantum wells and wires) is dominated by nuclear hyperfine interaction, which weakens progressively with temperature. We hope that our work, which elaborates on all of the above mentioned topics in great detail, will be a significant contribution towards the current state of knowledge of subtle spin-based issues operative in nanoscale device structures, and will ultimately lead to realization of novel nano-spintronic devices.
APA, Harvard, Vancouver, ISO, and other styles
3

Artioli, Alberto. "Formation de polarons magnétiques dans des boîtes quantiques de (Cd,Mn)Te insérées dans des nanofils de ZnTe." Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAY006/document.

Full text
Abstract:
Ce travail de thèse porte sur l’étude des propriétés optiques de boites quantiques anisotropes de (Cd,Mn)Te insérées dans des nanofils de ZnTe. Les boites quantiques étudiées contenant 10% de Mn sont allongées suivant l’axe du fil ce qui tend à favoriser un état fondamental à trou léger ayant une susceptibilité de spin perpendiculaire à l’axe du fil. L’objectif principal de la thèse est l’étude de la formation du Polaron Magnétique dans ces boites et la détermination de leur anisotropie magnétique.Nous avons étudié en premier les propriétés optiques de nanofils de ZnTe et de nanofils coeurs-coquilles ZnTe/(Zn,Mg)Te. Ces études nous ont amené à modéliser les contraintes élastiques dans le cœur, dans la coquille et dans des boites allongées insérées dans les nanofils. Ce modèle nous a permis d’estimer les splittings entre les niveaux de trou lourd et de trou léger dans la boite et dans le fil.Nous avons étudié ensuite des nanofils contenant des boites magnétiques et non magnétiques par spectroscopie magnéto-optique. Dans les boites magnétiques, les interactions d’exchange entre les porteurs localisés et les spins de Mn induisent un très fort décalage Zeeman de la raie excitonique (Effet Zeeman Géant). Pour extraire des paramètres quantitatifs, nous avons combiné différentes techniques expérimentales sur le même nanofil (photo et cathodoluminescence, analyse dispersive en énergie du rayonnement X). Nous avons utilisé différentes orientations du champ magnétique pour déterminer l’anisotropie du trou dans la boite. Les valeurs expérimentales sont plus petites que les valeurs théoriques ce qui suggère un mauvais confinement du trou dans la boite.Afin d’obtenir un meilleur confinement du trou, nous avons étudié des boites de (Cd,Mn)Te entourées d’une coquille de (Zn,Mg)Te. Grace au meilleur confinement du trou, nous avons réussi à observer la formation du Polaron Magnétique excitonique. Des mesures de photoluminescence résolues en temps sur des nanofils uniques nous ont permis d’extraire l’énergie et le temps de formation du Polaron Magnétique entre 5K et 50K. La raie d’émission des boites présente un effet Zeeman géant inhabituel caractéristique d’un Polaron Magnétique à trou léger. Nous avons développé un modèle théorique pour décrire la formation du Polaron Magnétique excitonique dans les boites quantiques. Ce model, basé sur l’énergie libre et valable pour des températures et des champs magnétiques arbitraires, a été utilisé pour rendre compte de l’ensemble des données expérimentales. Ce modèle a permis de déterminer les paramètres caractéristiques du polaron magnétique à trou léger (énergie, orientation and amplitude du moment magnétique, volume d’échange, anisotropie du trou)
In this PhD work we study the optical properties of anisotropic (Cd,Mn)Te magnetic quantum dots inserted in ZnTe nanowires. The quantum dots containing typically 10% of Mn spins are elongated along the nanowire axis which tend to stabilize a light hole ground state with a spin susceptibility perpendicular to the nanowire axis. The main goal was to study the formation of exciton Magnetic Polarons in such quantum dots and to determine their magnetic anisotropy.We investigate first the optical properties of ZnTe and ZnTe/(Zn,Mg)Te core shell nanowires. We model the elastic strain profile in core-shell nanowires and in elongated quantum dots. From the strain profiles, we estimate the value of the light hole heavy hole splitting expected in the dot and in the nanowire.In a second step we study single nanowires containing magnetic and non magnetic quantum dots by magneto-optical spectroscopy. The exchange interactions between confined carriers and Mn spins induce a large Zeeman shift of the exciton line (Giant Zeeman Effect). To extract quantitative parameters, we combine different experimental techniques (photo and cathodoluminescence, energy dispersive X ray spectroscopy) on the same nanowire. We use also different magnetic field orientations in order to determine the hole anisotropy in the dot. The experimental values are smaller than the theoretical ones suggesting a weak confinement of the holes in the dot due to a small (Cd,Mn)Te/ZnTe valence band offset.In a third step we study nanowires containing (Cd,Mn)Te quantum dots surrounded by a (Zn,Mg)Te alloy. Thanks to the better hole confinement induced by the (Zn,Mg)Te alloy, the formation of exciton magnetic polarons can be observed. We perform time resolved photoluminescence studies on single nanowires in order to determine the energy and the formation time of magnetic polarons from 5K to 50K. The quantum dot emission line shows an unusual Zeeman shift, characteristic of a light hole magnetic polaron. We develop a theoretical model describing the formation of exciton magnetic polaron in quantum dots. We use this model, based on the free energy and valid for any temperature and magnetic field, to fit the whole set of experimental data. It allows us to determine the characteristic parameters of the light hole magnetic polarons (energy, orientation and magnitude of the magnetic moment, exchange volume, hole anisotropy)
APA, Harvard, Vancouver, ISO, and other styles
4

Hell, Michael [Verfasser]. "Virtual fluctuations with real implications : quantum-dot spintronics and qubit readout / Michael Hell." Aachen : Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen, 2015. http://d-nb.info/1076065430/34.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Souza, Fabricio Macedo de. "Transporte quântico em spintrônica: corrente e shot noise via funções de Green de não equilíbrio." Universidade de São Paulo, 2004. http://www.teses.usp.br/teses/disponiveis/76/76131/tde-26112008-143946/.

Full text
Abstract:
Estudamos transporte quântico dependente de spin em sistemas de ponto e de poço quântico acoplados a contatos magnéticos. O primeiro passo do nosso estudo foi a dedução de fórmulas originais para a corrente e para o ruído em sistemas com tunelamento dependente de spin, através do formalismo de funções de Green de mão equilíbrio. As equações deduzidas reproduzem casos limites da literatura - em particular as fórmulas de Landauer-Buttiker. Posteriormente aplicamos essas fórmulas para estudar três sistemas distintos: (1) ponto quântico acoplado a contatos ferromagnéticos, (2) um ponto quântico acoplado a múltiplos terminais ferromagnéticos, e (3) um poço quântico acoplado a terminais de semicondutor magnético diluído (DMS). No sistema (1) consideramos os alinhamentos paralelo (P) e anti-paralelo (AP) entre as magnetizações dos terminais. Nesse sistema levamos em conta interação de Coulomb e espalhamento de spin no ponto quântico. Com as fórmulas para corrente e ruído deduzidas aqui, encontramos, por exemplo, que a interação de Coulomb, combinada com o magnetismo dos eletrodos, leva a um bloqueio de Coulomb dependente de spin. Esse efeito por sua vez leva a uma polarização da corrente que pode ser modulada (intensidade e sinal) através de uma tens~ao externa. Também encontramos que o espalhamento de spin leva a comportamentos contrastantes entre corrente e ruído. Enquanto a corrente na configuração AP aumenta com a taxa de espalhamento de spin R, o ruído nessa mesma configuração é suprimido para uma certa faixa de valores de R. Um outro efeito interessante que observamos foi a possibilidade de se suprimir o ruído térmico através de uma tensão de porta. Para o sistema (2) mostramos que é possível injetar corrente ↑-polarizada no ponto quântico e coletar simultaneamente correntes ↑ e ↓ polarizadas em terminais diferentes. Além disso, a corrente ao passar do reservatório emissor para um dos reservatórios coletores tem a sua polarização intensificada. Portanto esse sistema pode operar como inversor e amplificador de polarização de corrente. Por último, analisamos os efeitos de terminais DMS e quantização de Landau (na presença de um campo magnético externo) sobre a corrente e o ruído no sistema (3). Encontramos que o efeito Zeeman gigante nos terminais DMS, gerado pela interação de troca s-d, leva a uma polarização da corrente. Em particular, para uma certa faixa de tensão o efeito Zeeman gigante resulta na completa supressão de uma dada componente de spin no transporte. Com isso é possível controlar a polarização da corrente através de uma tensão externa. Também observamos oscilações na corrente, no ruído e no fator de Fano como função do campo magnético.
We study spin dependent quantum transport in quantum dots and quantum well devices attached to magnetic leads. We first derive general formulas, including electron-electron interaction and spin flip, for both current and noise, using the no equilibrium Green function technique (Keldysh). From our equations we regain limiting cases in the literature - in particular the Landauer-Buttiker formula when we neglect electron-electron interaction. We apply these formulas to study three distinct systems: (1) a quantum dot attached to two ferromagnetic leads, (2) a quantum dot linked to many ferromagnetic leads, and (3) a quantum well coupled to dilute magnetic semiconductor (DMS) terminals. In the first system we consider both parallel (P) and anti-parallel (AP) ferromagnetic alignments of the leads. Coulomb interaction and spin flip scattering are also taken into account. With the formulas for the current and the noise derived here, we find, for instance, that the Coulomb interaction, combined with the magnetism of the electrodes, gives rise to a spin-dependent Coulomb blockade. This effect allows the control (intensity and sign) of the current polarization via the bias voltage. We also observe that spin flip scattering yields contrasting behavior between current and shot noise. While the current in the AP configuration increases with the spin flip, the shot noise becomes suppressed for a range of spin flip rates. Another interesting finding is the possibility to suppress the thermal noise via a gate voltage. For the dot coupled to three magnetic leads, we show that it is possible to inject current ↑-polarized into the dot from the FM emitter, detect simultaneously ↑ and ↓ - polarized currents at distinct collectors. In addition, we find that the current has its polarization amplified when going from the emitter to one of the collectors. Therefore we have a device that operates as both as current polarization inverter and amplifier. Finally, we analyze the effects of DMS leads and Landau quantization on the current and noise of system (3). We and that the giant Zeeman effect in the DMS leads, due to the it s-d exchange interaction, gives rise to a spin polarized current, and for a particular bias voltage range, full suppression of one spin component. This gives rise to the possibility of tuning the current polarization via the bias voltage. We also observe oscillations in the current, the noise and the Fano factor as a function of the magnetic field.
APA, Harvard, Vancouver, ISO, and other styles
6

Siqueira, Ezequiel Costa. "Transporte por reflexão de Andreev em pontos quânticos duplos acoplados a eletrodos supercondutores e ferromagnéticos." [s.n.], 2010. http://repositorio.unicamp.br/jspui/handle/REPOSIP/277834.

Full text
Abstract:
Orientador: Guillermo Gerardo Cabrera Oyarzun
Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin
Made available in DSpace on 2018-09-24T19:09:49Z (GMT). No. of bitstreams: 1 Siqueira_EzequielCosta_D.pdf: 16155551 bytes, checksum: 43337169b3f9ac0ffbe444e3859ff790 (MD5) Previous issue date: 2010
Resumo: Neste trabalho é estudado o transporte quântico em nanoestruturas híbridas compostas por pontos quânticos (PQ) duplos acoplados a eletrodos supercondutores (S) e ferromagnéticos (F). A primeira nanoestrutura, denotada por F - PQa - PQb - S consiste em dois PQs em série acoplados a um eletrodo ferromagnético e outro supercondutor. O segundo sistema, denotado por (F1, F2) - PQa - PQb - S consiste em dois PQs em série acoplados a dois eletrodos ferromagnéticos e um supercondutor. Através do método de funções de Green de não equilíbrio foram obtidas expressões para a corrente elétrica, condutância diferencial, densidade local de estados (LDOS) e a transmitância para energias inferiores ao gap supercondutor. Neste regime, o mecanismo de transmissão de carga é a reflexão de Andreev, a qual permite controlar a corrente através da polarização do ferromagneto. A presença de interações nos PQs é considerada usando um tratamento de campo médio. Para o sistema F - PQa - PQb - S, as interações tendem a localizar os elétrons nos PQs levando a um padrão assimétrico da LDOS reduzindo a transmissão através da nanoestrutura. Em particular, a interação intra PQ levanta a degenerescência de spin reduzindo o valor máximo da corrente devido ao desequilíbrio nas populações de spin up e spin down. Regiões de condutância diferencial negativa (CDN) aparecem em determinados valores do potencial aplicado, como resultado da competição entre o espalhamento Andreev e as correlações eletrônicas. Aplicando-se um potencial de gate nos pontos quânticos é possível sintonizar o efeito mudando a região onde este fenômeno ocorre. Para o sistema (F1, F2) - PQa - PQb - S observou-se que o sinal da magnetoresistência pode mudar de positivo para negativo mudando-se o sinal do potencial aplicado. Além disso é possível controlar a corrente no primeiro eletrodo mudando-se o valor do potencial no segundo ferromagneto. Este tipo de controle pode ser interessante do ponto de vista de aplicações desde que é um comportamento similar a um transistor. Na presença de interações nos PQs, observou-se novamente regiões de CDN para determinados valores do potencial aplicado mesmo para quando os ferromagnetos estão completamente polarizados. Desta forma, a interação entre supercondutividade e correlações eletrônicas permitiu observar fenômenos originais mostrando que este sistemas podem ser utilizados em aplicações tecnológicas futuras
Abstract: In this work we studied the quantum transport in two hybrid nanostructures composed of double quantum dots (DQD)s coupled to superconductor (S) and ferromagnetic (F) leads. The first nanostructure, denoted by F - QDa - QDb - S, is composed of a ferromagnet, two quantum dots, and a superconductor connected in series. In the second nanostructure, denoted by ( F1, F2) - QDa - Q Db - S, a second ferromagnetic lead is added and coupled to the first QD. By using the non-equilibrium Green's function approach, we have calculated the electric current, the differential conductance and the transmittance for energies within the superconductor gap. In this regime, the mechanism of charge transmission is the Andreev re°ection, which allows for a control of the current through the ferromagnet polarization. We have also included interdot and intradot interactions, and have analyzed their influence through a mean field approximation. For the F - QDa - QDb - S system the presence of interactions tend to localize the electrons at the double-dot system, leading to an asymmetric pattern for the density of states at the dots, and thus reducing the transmission probability through the device. In particular, for non-zero polarization, the intradot interaction splits the spin degeneracy, reducing the maximum value of the current due to different spin-up and spin-down densities of states. Negative differential conductance (NDC) appears for some regions of the voltage bias, as a result of the interplay of the Andreev scattering with electronic correlations. By applying a gate voltage at the dots, one can tune the effect, changing the voltage region where this novel phenomenon appears. In the (F1, F2) - QDa - QDb - S, we have found that the signal of the magnetoresistance can be changed through the external potential applied in the ferromagnets. In addition, it is possible to control the current of the first ferromagnet (F1) through the potential applied in the second one (F2). This transistor-like behavior can be useful in technological applications. In the presence of interaction at the dots it was observed the NDC effect even when the electrodes were fully polarized. The results presented in this thesis show that the interplay between the superconductor correlation and electronic interactions can give rise to original effects which can be used in future technological applications
Doutorado
Física da Matéria Condensada
Doutor em Ciências
APA, Harvard, Vancouver, ISO, and other styles
7

Nóbrega, Jaldair Araújo e. "Magneto luminescência em diodos de tunelamento ressonante contendo pontos quânticos de InAs." Universidade Federal de São Carlos, 2011. https://repositorio.ufscar.br/handle/ufscar/5033.

Full text
Abstract:
Made available in DSpace on 2016-06-02T20:16:48Z (GMT). No. of bitstreams: 1 3888.pdf: 18962527 bytes, checksum: f175880c3d28fb0f29001b9881fedf3e (MD5) Previous issue date: 2011-03-15
Financiadora de Estudos e Projetos
In this work, we have studied the spin polarization of carriers in n-type resonant tunneling diodes (RTDs) of GaAs/AlGaAs which incorporates a single layer of InAs selfassembled quantum dots in the center of the GaAs quantum well (QW) grown on (3 1 1)B oriented GaAs substrates.We have performed electrical and optical measurements in the presence and absence of magnetic _eld. The spin-dependent carrier transport in the structure was investigated by measuring the left- and right-circularly polarized photoluminescence (PL) from InAs dots (QD) and contact layers as a function of the applied voltage, laser intensity and magnetic _eld up to 15 T. Under laser excitation, photogenerated holes tunnel through the QW and can be captured by the QDs and eventually recombine radiatively. Due to this fast carrier capture process, the QD photoluminescence will be very sensitive to the resonant tunneling condition and consequently to the applied bias voltage. We have observed a clear correlation between the current voltage characteristics curve (I(V)) and QD PL intensity for both circular _+ and _�� polarizations even though the spin-splitting of the QD PL emission is negligible and does not show any appreciable variation with the applied voltage. We have also observed that the QD circular polarization degree is always negative and that its value depends on both the applied bias voltage and the light excitation intensity. Our experimental results are explained by the tunneling of minority carriers into the QW, carrier capture into the InAs QDs, carrier accumulation in the QW region, and partial thermalization of minority carriers. The observed control of spin polarization of carriers by light and bias voltage may be explored to design new devices for spintronic applications.
Neste trabalho realizamos um estudo detalhado de efeitos de spin em um diodo tunelamento ressonante (RTD) de GaAs/AlGaAs crescidos em um substrato GaAs (311)B. Em particular estudamos RTDs do tipo n contendo pontos quânticos (QD) de InAs no poço quântico (QW). Os estudos foram realizados a partir de medidas elétricas e ópticas na presença e na ausência de campo magnético. Realizamos medidas de fotoluminescência (PL) resolvida em polarização do contato GaAs e pontos quânticos de InAs em função de intensidade de laser , voltagem e campo magnético de até 15T . Na presença de luz e voltagem aplicada , buracos são fotogerados no contato, tunelam para o QW e são capturados por QDs. Portadores capturados pelos QDs recombinam e dão origem ao sinal de fotoluminência. Devido ao tempo curto desse processo de captura de portadores, a PL do QD será muito sensível à condição de tunelamento ressonante. Os resultados experimentais mostram uma clara correlação entre a curva característica de corrente-tensão (I(V)) e intensidade de PL do QD para ambas polarizações _+ e _��. Observamos que o grau de polarização circular do QD é sempre negativo e que seu valor depende fortemente da voltagem aplicada e da intensidade da luz de excitação. Os resultados experimentais são explicados pelo tunelamento e captura de portadores minoritários pelo QD de InAs, acúmulo de cargas na região de QW e termalização parcial dos portadores minoritários. O controle da polarização de spin de portadores por luz e voltagem pode ser um efeito interessante para o desenvolvimento de novos dispositivos para aplicação em spintrônica.
APA, Harvard, Vancouver, ISO, and other styles
8

Saygun, Turab. "Magnetic State Detection in Magnetic Molecules Using Electrical Currents." Thesis, Uppsala universitet, Materialteori, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-257094.

Full text
Abstract:
A system with two magnetic molecules embedded in a junction between non-magnetic leads was studied. In this system electrons tunnel from the localized energy level in region one to the localized energy level in region two generating a flow of electric charge through the quantum dot system. The current density and thus the conductance changes depending on the molecular spin moment. In this work we studied molecules with either spin "up" or spin "down" and with symmetric coupling strengths. The results indicate that the coupling strength between energy level and molecule together with the tunneling rate through the insulating layer play a major role when switching from parallel to anti-parallel molecular spin, for a specific combination of the coupling strength and tunneling rate we could observe a decrease in the current by 99.7% in the non-gated system and 99.4% in the gated system.
APA, Harvard, Vancouver, ISO, and other styles
9

Santos, Ednilson Carlos dos. "Polarização de spin em heteroestruturas semicondutoras contendo pontos quânticos de InAs." Universidade Federal de São Carlos, 2010. https://repositorio.ufscar.br/handle/ufscar/5027.

Full text
Abstract:
Made available in DSpace on 2016-06-02T20:16:47Z (GMT). No. of bitstreams: 1 3100.pdf: 15486082 bytes, checksum: 5571e424d9aa0ed6b176f29ef78c25dc (MD5) Previous issue date: 2010-05-07
Universidade Federal de Sao Carlos
In this work, we have studied spin polarization of carriers in a resonant tunneling diode GaAs/AlGaAs with InAs quantum dots in the center of the quantum well. We have observed that the photoluminescence of quantum dots depends on applied voltage and light intensity. Our results were explained by the capture of minority carriers (holes) to quantum dot energy levels in the resonant conditions. We have also studied the polarized resolved photoluminescence under magnetic field applied parallel to the tunnel current. We have observed that the degree of circular polarization is voltage-dependent under low voltage and laser intensity condition. We have also observed that the degree of polarization of quantum dots tends to zero for high applied voltages. Our results show that the circular polarization depends on the injection and capture of holes by quantum dots. Finally, we observed that the circular polarization from quantum dots can be voltage and light-controlled and could be interesting for the developing of new spintronics devices.
Neste trabalho realizamos um estudo detalhado de efeitos de spin em um diodo de tunelamento ressonante GaAs/AlGaAs do tipo n com pontos quânticos de InAs no poço quântico. Os estudos foram realizados a partir de medidas elétricas e ópticas na presença e ausência de campo magnético. Os resultados obtidos na ausência de campo magnético são semelhantes aos resultados publicados na literatura para mesma amostra estudada. Em particular, obtivemos uma boa correlação entre a intensidade de luminescência dos quantum dots e a curva característica corrente - tensão (I(V)) do diodo. Os dados obtidos foram associados aos processos de tunelamento, relaxação e captura de portadores nos níveis de energia dos dots. As medidas realizadas na presença de campo magnético foram feitas da configuração de campo magnético paralelo à corrente elétrica no dispositivo. Tal disposição leva à quebra na degenerescência dos níveis em spin dos dots, e resulta em recombinação de portadores com regras de seleção bem definidas com luz circularmente polarizada. Observamos que tanto a emissão circularmente polarizada à esquerda como à direita são dependentes da tensão aplicada no diodo, principalmente na região de baixas voltagens. À medida que a tensão aumenta, a intensidade de polarização tende a zero. Os resultados obtidos são originais e devem auxiliar na compreensão de fenômenos de spin desses sistemas. Esse trabalho poderá também ter interesse no desenvolvimento de possíveis dispositivos de spintronica contendo pontos quânticos.
APA, Harvard, Vancouver, ISO, and other styles
10

Vincent, Romain. "Spintronique moléculaire : étude de la dynamique d'un spin nucléaire unique." Phd thesis, Université de Grenoble, 2012. http://tel.archives-ouvertes.fr/tel-00945672.

Full text
Abstract:
Cette thèse se situe à la croisée de trois domaines : la spintronique qui s'attache à utiliser le degré de liberté du spin de l'électron afin de fabriquer de nouveaux dispositifs électroniques; l'électronique moléculaire qui cherche à profiter des progrès de la chimie moderne afin de fournir des alternatives au tout semi-conducteur de la micro-électronique; le magnétisme moléculaire qui cherche à synthétiser des aimants moléculaires aux propriétés toujours plus riches. Notre travail a consisté à produire un dispositif électronique à base d'aimant moléculaire et d'utiliser le spin de l'électron afin d'étudier les propriétés magnétiques à l'échelle d'une molécule. Des dispositifs semblables pourraient, dans l'avenir, constituer l'une des briques élémentaires de l'information quantique. Nous avons pour cela opté pour un transistor moléculaire à effet de champ, ayant pour canal un aimant moléculaire aux propriétés magnétiques bien connues : le Terbium double-decker ou TbPc2. Grâce à ce dispositif, nous avons, dans un premier temps, mis en évidence le retournement de l'aimantation d'une molécule unique par effet tunnel ou QTM (quantum tunneling of the magnetization). En effet, nous avons démontré que ce retournement entraînait une modification soudaine de la conductance de notre système. En effectuant une étude statistique sur les valeurs du champ de retournement, nous avons mis en évidence la présence de résonances que nous avons pu attribuer au phénomène de QTM. Nous avons également mesuré l'état d'un spin nucléaire unique : chaque résonance étant associée à un état de spin nucléaire. Nous avons étudié la température du spin nucléaire et montré que celle-ci pouvait être influencée par l'environnement électrostatique du système. En outre, le temps de vie d'un état de spin nucléaire a été extrait et estimé à quelques secondes, vérifiant que le système était faiblement perturbé par notre technique de mesure. Ces travaux jettent les bases de la construction du premier Qbit à base d'aimants moléculaires. Par des techniques de radiofréquence, le spin nucléaire pourrait être manipulé, la lecture se faisant ensuite par une mesure en conductance.
APA, Harvard, Vancouver, ISO, and other styles

Books on the topic "Quantum dots. Spintronics"

1

International Winter School on New Developments in Solid State Physics (13th 2004 Mauterndorf, Austria). Proceedings of the Thirteenth International Winterschool on New Developments in Solid State Physics: Low-dimensional systems : held in Mauterndorf, Austria, 15-20 February 2004. Edited by Bauer G. 1942-, Jantsch W. 1946-, and Kuchar F. 1941-. Amsterdam, The Netherlands: Elsevier, 2004.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
2

International Winter School on New Developments in Solid State Physics (13th 2004 Mauterndorf, Austria). Proceedings of the Thirteenth International Winterschool on New Developments in Solid State Physics: Low-dimensional systems : held in Mauterndorf, Austria, 15-20 February 2004. Edited by Bauer G. 1942-, Jantsch W. 1946-, and Kuchar F. 1941-. Amsterdam, The Netherlands: Elsevier, 2004.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
3

Melnikov, D. V., J. Kim, L. X. Zhang, and J. P. Leburton. Few-electron quantum-dot spintronics. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.2.

Full text
Abstract:
This article examines the spin and charge properties of double and triple quantum dots (QDs) populated containing just a few electrons, with particular emphasis on laterally coupled QDs. It first describes the theoretical approach, known as exact diagonalization method, utilized on the example of the two-electron system in coupled QDs that are modelled as two parabolas. The many-body problem is solved via the exact diagonalization method as well as variational Heitler–London and Monte Carlo methods. The article proceeds by considering the general characteristics of the two-electron double-QD structure and limitations of the approximate methods commonly used for its theoretical description. It also discusses the stability diagram for two circular dots and investigates how its features are affected by the QD elliptical deformations. Finally, it assesses the behavior of the two-electron system in the realistic double-dot confinement potentials.
APA, Harvard, Vancouver, ISO, and other styles
4

M, Razeghi, Brown Gail J, and Society of Photo-optical Instrumentation Engineers., eds. Quantum sensing: Evolution and revolution from past to future : 27-30 January, 2003, San Jose, California, USA. Bellingham, Wash: SPIE, 2003.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
5

Narlikar, A. V., and Y. Y. Fu, eds. Oxford Handbook of Nanoscience and Technology. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.001.0001.

Full text
Abstract:
This volume highlights engineering and related developments in the field of nanoscience and technology, with a focus on frontal application areas like silicon nanotechnologies, spintronics, quantum dots, carbon nanotubes, and protein-based devices as well as various biomolecular, clinical and medical applications. Topics include: the role of computational sciences in Si nanotechnologies and devices; few-electron quantum-dot spintronics; spintronics with metallic nanowires; Si/SiGe heterostructures in nanoelectronics; nanoionics and its device applications; and molecular electronics based on self-assembled monolayers. The volume also explores the self-assembly strategy of nanomanufacturing of hybrid devices; templated carbon nanotubes and the use of their cavities for nanomaterial synthesis; nanocatalysis; bifunctional nanomaterials for the imaging and treatment of cancer; protein-based nanodevices; bioconjugated quantum dots for tumor molecular imaging and profiling; modulation design of plasmonics for diagnostic and drug screening; theory of hydrogen storage in nanoscale materials; nanolithography using molecular films and processing; and laser applications in nanotechnology. The volume concludes with an analysis of the various risks that arise when using nanomaterials.
APA, Harvard, Vancouver, ISO, and other styles
6

Glazov, M. M. Introduction. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198807308.003.0001.

Full text
Abstract:
Creation, detection, and manipulation of spin degrees of freedom of electrons and nuclei, phenomena of spin relaxation, decoherence and dephasing, and processes of spin transfer between different subsystems are among the most important problems studied in semiconductor spintronics. These effects are most pronounced in systems with localized charge carriers, such as semiconductor quantum dots. This chapter contains the motivation behind and a brief review of the material presented in the book. It also clarifies the logic of the presentation in further chapters. Chapter 1 may be helpful to readers willing to find appropriate material without going through the whole book, as it contains a concise overview of the other chapters.
APA, Harvard, Vancouver, ISO, and other styles

Book chapters on the topic "Quantum dots. Spintronics"

1

Kioseoglou, G., C. H. Li, and B. T. Jonker. "Electrical Spin Injection into InGaAs Quantum Dots." In Handbook of Spintronics, 1–27. Dordrecht: Springer Netherlands, 2015. http://dx.doi.org/10.1007/978-94-007-7604-3_19-1.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Kioseoglou, G., C. H. Li, and B. T. Jonker. "Electrical Spin Injection into InGaAs Quantum Dots." In Handbook of Spintronics, 399–430. Dordrecht: Springer Netherlands, 2016. http://dx.doi.org/10.1007/978-94-007-6892-5_19.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Recher, Patrik, Daniel Loss, and Jeremy Levy. "Spintronics and Quantum Computing with Quantum Dots." In Macroscopic Quantum Coherence and Quantum Computing, 293–306. Boston, MA: Springer US, 2001. http://dx.doi.org/10.1007/978-1-4615-1245-5_30.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Sachrajda, A., P. Hawrylak, and M. Ciorga. "Nano-Spintronics with Lateral Quantum Dots." In Electron Transport in Quantum Dots, 87–122. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4615-0437-5_3.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Burkard, Guido, and Daniel Loss. "Electron Spins in Quantum Dots as Qubits for Quantum Information Processing." In Semiconductor Spintronics and Quantum Computation, 229–76. Berlin, Heidelberg: Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/978-3-662-05003-3_8.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Burkard, Guido, Hans-Andreas Engel, and Daniel Loss. "Spintronics and Quantum Dots for Quantum Computing and Quantum Communication." In Complexity from Microscopic to Macroscopic Scales: Coherence and Large Deviations, 83–104. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0419-0_4.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Burkard, Guido, Hans-Andreas Engel, and Daniel Loss. "Spintronics and Quantum Dots for Quantum Computing and Quantum Communication." In Scalable Quantum Computers, 195–216. Weinheim, FRG: Wiley-VCH Verlag GmbH & Co. KGaA, 2005. http://dx.doi.org/10.1002/3527603182.ch13.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Rossier, Joaquín Fernández‑, and Ramón Aguado. "Magnetism and Transport in DMS Quantum Dots." In Spintronics Handbook: Spin Transport and Magnetism, Second Edition, 199–235. Second edition. | Boca Raton : Taylor & Francis, CRC Press, 2018. |: CRC Press, 2019. http://dx.doi.org/10.1201/9780429441189-6.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Ludwig, Arne, Björn Sothmann, Henning Höpfner, Nils C. Gerhardt, Jörg Nannen, Tilmar Kümmell, Jürgen König, Martin R. Hofmann, Gerd Bacher, and Andreas D. Wieck. "Quantum Dot Spintronics: Fundamentals and Applications." In Springer Tracts in Modern Physics, 235–68. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-32042-2_7.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Yamamoto, Yoshihisa, Matthew Pelton, Charles Santori, Glenn S. Solomon, Oliver Benson, Jelena Vuckovic, and Axel Scherer. "Regulated Single Photons and Entangled Photons From a Quantum Dot Microcavity." In Semiconductor Spintronics and Quantum Computation, 277–305. Berlin, Heidelberg: Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/978-3-662-05003-3_9.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Quantum dots. Spintronics"

1

Sargent, Edward H. "Optical sources based on perovskites and quantum dots." In Spintronics XIII, edited by Henri-Jean M. Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2020. http://dx.doi.org/10.1117/12.2561717.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Cadiz, Fabian, Delphine Lagarde, Shiheng Liang, Bingshan Tao, Julien Frougier, Yuan Lu, Bo Xu, et al. "Very efficient electrical spin injection (/detection) into quantum dots at zero magnetic field." In Spintronics X, edited by Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2017. http://dx.doi.org/10.1117/12.2273746.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Eble, Benoit, B. Siarry, Frederick Bernardot, P. Grinberg, Chrsitophe Testelin, and Aristide Lemaitre. "Exciton spin coherence in InGaAs/GaAs quantum dots revisited by heterodyne pump-probe experiment (Withdrawal Notice)." In Spintronics IX, edited by Henri-Jean Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2016. http://dx.doi.org/10.1117/12.2236319.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Müller, Kai, Tobias Simmet, Fuxiang Li, Alexander Bechtold, Nikolai Sinitsyn, and Jonathan J. Finley. "Dephasing dynamics of optically active electron and hole spin qubits in self-assembled quantum dots (Conference Presentation)." In Spintronics XI, edited by Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2018. http://dx.doi.org/10.1117/12.2321201.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

TACKEUCHI, A., T. KURODA, Y. NAKATA, and N. YOKOYAMA. "ANTIFERROMAGNETIC COUPLING BETWEEN SEMICONDUCTOR QUANTUM DOTS." In Toward the Controllable Quantum States - International Symposium on Mesoscopic Superconductivity and Spintronics (MS+S2002). WORLD SCIENTIFIC, 2003. http://dx.doi.org/10.1142/9789812705556_0071.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

SUZUKI, T., M. HAYASHI, H. IMAMURA, and H. EBISAWA. "SUPERCONDUCTING CORRELATION IN ORBITAL MAGNETISM OF QUANTUM DOTS." In Toward the Controllable Quantum States - International Symposium on Mesoscopic Superconductivity and Spintronics (MS+S2002). WORLD SCIENTIFIC, 2003. http://dx.doi.org/10.1142/9789812705556_0068.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

TANAKA, Y., and N. KAWAKAMI. "SPIN-POLARIZED TRANSPORT PROPERTIES THROUGH DOUBLE QUANTUM DOTS." In Proceedings of the International Symposium on Mesoscopic Superconductivity and Spintronics — In the Light of Quantum Computation. WORLD SCIENTIFIC, 2005. http://dx.doi.org/10.1142/9789812701619_0067.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

HADA, YOKO, and MIKIO ETO. "ELECTRONIC STATES AND SPIN CONFIGURATIONS IN SILICON QUANTUM DOTS." In Toward the Controllable Quantum States - International Symposium on Mesoscopic Superconductivity and Spintronics (MS+S2002). WORLD SCIENTIFIC, 2003. http://dx.doi.org/10.1142/9789812705556_0077.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

MARTINEK, J., M. SINDEL, L. BORDA, Y. UTSUMI, H. IMAMURA, J. BARNAŚ, S. MAEKAWA, J. KÖNIG, J. VON DELFT, and G. SCHÖN. "KONDO EFFECT IN QUANTUM DOTS IN PRESENCE OF ITINERANT-ELECTRON MAGNETISM." In Proceedings of the International Symposium on Mesoscopic Superconductivity and Spintronics — In the Light of Quantum Computation. WORLD SCIENTIFIC, 2005. http://dx.doi.org/10.1142/9789812701619_0065.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

FALCI, G., A. MASTELLONE, and ROSARIO FAZIO. "INTERPLAY BETWEEN THE PAIRING AND EXCHANGE INTERACTIONS IN SMALL METALLIC DOTS." In Toward the Controllable Quantum States - International Symposium on Mesoscopic Superconductivity and Spintronics (MS+S2002). WORLD SCIENTIFIC, 2003. http://dx.doi.org/10.1142/9789812705556_0064.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'Quantum dots. Spintronics' for particular source types:
Journal articles
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography