Log in

Relevant bibliographies by topics / Quantum dots. Spintronics / Journal articles

To see the other types of publications on this topic, follow the link: Quantum dots. Spintronics.

Journal articles on the topic 'Quantum dots. Spintronics'

Author: Grafiati

Published: 4 June 2021

Last updated: 5 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 42 journal articles for your research on the topic 'Quantum dots. Spintronics.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Rokhinson, Leonid P., Lingue J. Guo, Steven Y. Chou, and Daniel C. Tsui. "Spintronics with Si quantum dots." Microelectronic Engineering 63, no. 1-3 (August 2002): 147–53. http://dx.doi.org/10.1016/s0167-9317(02)00609-3.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Droth, Matthias, and Guido Burkard. "Spintronics with graphene quantum dots." physica status solidi (RRL) - Rapid Research Letters 10, no. 1 (July 27, 2015): 75–90. http://dx.doi.org/10.1002/pssr.201510182.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Burkard, Guido, Hans-Andreas Engel, and Daniel Loss. "Spintronics and Quantum Dots for Quantum Computing and Quantum Communication." Fortschritte der Physik 48, no. 9-11 (September 2000): 965–86. http://dx.doi.org/10.1002/1521-3978(200009)48:9/11<965::aid-prop965>3.0.co;2-v.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Wood, Jonathan. "Charging up magnetic quantum dots for spintronics." Materials Today 9, no. 5 (May 2006): 13. http://dx.doi.org/10.1016/s1369-7021(06)71479-1.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Service, R. F. "PHYSICS: Quantum Dots Chemically Wired for Spintronics." Science 301, no. 5633 (August 1, 2003): 580. http://dx.doi.org/10.1126/science.301.5633.580.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Droth, Matthias, and Guido Burkard. "ChemInform Abstract: Spintronics with Graphene Quantum Dots." ChemInform 47, no. 10 (February 2016): no. http://dx.doi.org/10.1002/chin.201610267.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Engel, Hans-Andreas, Patrik Recher, and Daniel Loss. "Electron spins in quantum dots for spintronics and quantum computation." Solid State Communications 119, no. 4-5 (July 2001): 229–36. http://dx.doi.org/10.1016/s0038-1098(01)00110-7.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Leburton, Jean-Pierre, Satyadev Nagaraja, Philippe Matagne, and Richard M. Martin. "Spintronics and exchange engineering in coupled quantum dots." Microelectronics Journal 34, no. 5-8 (May 2003): 485–89. http://dx.doi.org/10.1016/s0026-2692(03)00080-6.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Sukhorukov, E. V., and D. Loss. "Spintronics and Spin-Based Qubits in Quantum Dots." physica status solidi (b) 224, no. 3 (April 2001): 855–62. http://dx.doi.org/10.1002/(sici)1521-3951(200104)224:3<855::aid-pssb855>3.0.co;2-1.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Poornaprakash, B., U. Chalapathi, P. T. Poojitha, S. V. Prabhakar Vattikuti, and Si-Hyun Park. "CdS:Eu quantum dots for spintronics and photocatalytic applications." Journal of Materials Science: Materials in Electronics 30, no. 9 (March 21, 2019): 8220–25. http://dx.doi.org/10.1007/s10854-019-01137-y.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

GAO, PAN, SUHANG LIU, LIN TIAN, and TIANXING MA. "QUANTUM MONTE CARLO STUDY OF MAGNETIC CORRELATION IN GRAPHENE NANORIBBONS AND QUANTUM DOTS." Modern Physics Letters B 27, no. 21 (August 11, 2013): 1330016. http://dx.doi.org/10.1142/s0217984913300160.

Full text

Abstract:

To realize the application of spintronics, possible magnetism in graphene-based material is an important issue to be addressed. At the tight banding level of armchair graphene nanoribbons, there are two flat bands in the band structure, two Van Hove singularities in the density of states, and the introducing of the next-nearest-neighbor hopping term cause high asymmetry in them, which plays a key role in the behavior of magnetic correlation. We further our studies within determinant quantum Monte Carlo simulation to treat the electron–electron interaction. It is found that the armchair graphene nanoribbons show carrier mediated magnetic correlation. In the armchair graphene nanoribbons, the antiferromagnetic correlation dominates around half filling, while the ferromagnetic correlation dominates as electron filling is lower than 0.8. Moreover, the ferromagnetic correlation is strengthened markedly as the next-nearest-neighbor hopping energy increases. The resultant manipulation of ferromagnetism in graphene-based material may facilitate the development of spintronics.

APA, Harvard, Vancouver, ISO, and other styles

12

CHOI, TAESEUNG, and MAHN-SOO CHOI. "A NEW QUANTUM KEY DISTRIBUTION PROTOCOL BASED ON QUANTUM FARADAY ROTATION." International Journal of Modern Physics B 22, no. 01n02 (January 20, 2008): 82–87. http://dx.doi.org/10.1142/s0217979208046086.

Full text

Abstract:

We propose a new quantum key distribution (QKD) protocol, which exploits the maximal entanglement between home qubits and flying qubits induced by means of quantum Faraday rotation (QFR). The entanglement between the flying and home qubits provides the essential part of the security of the protocol. We also discuss possible experimental implementations, the optical cavity QED and quantum dots in microcavity, which is feasible in current spintronics technology.

APA, Harvard, Vancouver, ISO, and other styles

13

Hawrylak, Pawel, François Peeters, and Klaus Ensslin. "Carbononics - integrating electronics, photonics and spintronics with graphene quantum dots." physica status solidi (RRL) - Rapid Research Letters 10, no. 1 (January 2016): 11–12. http://dx.doi.org/10.1002/pssr.201670707.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

CHEN, GOONG, ZIJIAN DIAO, JONG U. KIM, ARUP NEOGI, KERIM URTEKIN, and ZHIGANG ZHANG. "QUANTUM DOT COMPUTING GATES." International Journal of Quantum Information 04, no. 02 (April 2006): 233–96. http://dx.doi.org/10.1142/s0219749906001761.

Full text

Abstract:

Semiconductor quantum dots are a promising candidate for future quantum computer devices. Presently, there are three major proposals for designing quantum computing gates based on quantum dot technology: (i) electrons trapped in microcavity; (ii) spintronics; (iii) biexcitons. We survey these designs and show mathematically how, in principle, they will generate 1-bit rotation gates as well as 2-bit entanglement and, thus, provide a class of universal quantum gates. Some physical attributes and issues related to their limitations, decoherence and measurement are also discussed.

APA, Harvard, Vancouver, ISO, and other styles

15

Xiu, Faxian. "Magnetic Mn-Doped Ge Nanostructures." ISRN Condensed Matter Physics 2012 (May 7, 2012): 1–25. http://dx.doi.org/10.5402/2012/198590.

Full text

Abstract:

With the seemly limit of scaling on CMOS microelectronics fast approaching, spintronics has received enormous attention as it promises next-generation nanometric magnetoelectronic devices; particularly, the electric field control of ferromagnetic transition in dilute magnetic semiconductor (DMS) systems offers the magnetoelectronic devices a potential for low power consumption and low variability. Special attention has been given to technologically important group IV semiconductor based DMSs, with a prominent position for Mn doped Ge. In this paper, we will first review the current theoretical understanding on the ferromagnetism in MnxGe1−x DMS, pointing out the possible physics models underlying the complicated ferromagnetic behavior of MnxGe1−x. Then we carry out detailed analysis of MnxGe1−x thin films and nanostructures grown by molecular beam epitaxy. We show that with zero and one dimension quantum structures, superior magnetic properties of MnxGe1−x compared with bulk films can be obtained. More importantly, with MnxGe1−x nanostructures, such as quantum dots, we demonstrate a field controlled ferromagnetism up to 100 K. Finally we provide a prospective of the future development of ferromagnetic field effect transistors and magnetic tunneling junctions/memories using dilute and metallic MnxGe1−x dots, respectively. We also point out the bottleneck problems in these fields and rendering possible solutions to realize practical spintronic devices.

APA, Harvard, Vancouver, ISO, and other styles

16

CHI, FENG, JUN ZHENG, and XIQIU YUAN. "ALL-ELECTRICAL SPIN CONTROL IN A TRIPLE-TERMINAL QUANTUM DOTS RING: EFFECT OF THE INTERDOT COUPLING AND SPIN FLIP." Modern Physics Letters B 24, no. 01 (January 10, 2010): 97–107. http://dx.doi.org/10.1142/s0217984910022160.

Full text

Abstract:

The electron spin polarization in two quantum dots, which are inserted in one arm of a mesoscopic ring, is investigated by means of the non-equilibrium Keldysh Green's function technique. We find that the spin accumulations in the two dots Δni=ni↑-ni↓, where niσ is the spin-σ electron occupation number in dot i, can be efficiently tuned in terms of the applied bias voltage V, the interdot tunneling coupling strength tc and the phase induced by the Rashba spin-orbit interaction. By adjusting these parameters, Δn1 and Δn2 can be generated and manipulated either simultaneously or separately, which may have real usage in spintronics or quantum information devices. We interpret the origin of the spin accumulation in terms of the spin-dependent total effective coupling strengths between the leads and the dots.

APA, Harvard, Vancouver, ISO, and other styles

17

Jiang, Ying, and Yong Wang. "Mn-Rich Nanostructures inGe1-xMnx: Fabrication, Microstructure, and Magnetic Properties." Advances in Materials Science and Engineering 2012 (2012): 1–18. http://dx.doi.org/10.1155/2012/726921.

Full text

Abstract:

Magnetic semiconductors have attracted extensive attention due to their novel physical properties as well as the potential applications in future spintronics devices. Over the past decade, tremendous efforts have been made in the diluted magnetic semiconductors (DMS) system, with many controversies disentangled but many puzzles unsolved as well. Here in this paper, we summarize recent experimental results in the growth, microstructure and magnetic properties of Ge-based DMSs (mainlyGe1-xMnx), which have been comprehensively researched owing to their compatibility with Si microelectronics. Growth conditions of high-quality, defect-free, and magneticGe1-xMnxbulks, thin films, ordered arrays, quantum dots, and nanowires are discussed in detail.

APA, Harvard, Vancouver, ISO, and other styles

18

Ball, Philip. "Quantum engineering of matter from the laboratory to the market: an interview with Dieter Bimberg and Kang Wang." National Science Review 4, no. 2 (October 8, 2016): 210–12. http://dx.doi.org/10.1093/nsr/nww067.

Full text

Abstract:

Abstract Quantum dots introduce a new form of quantum engineering of materials properties based purely on size and dimensionality. Whereas we traditionally think of materials as having intrinsic properties such as strength, electrical conductivity and light absorption or emission spectra due to their composition and atomic-scale structure, when their size is very small, such properties can be altered by quantum-mechanical effects, for example due to confinement of the quantum wavefunctions that determine the energies of charge carriers like electrons. As it became possible in the 1990s to control the size of material structures with a precision of less than a nanometre in all three dimensions of space, quantum effects began to be exploited for technological applications. Quantum dots are particles with a nanoscale extent in three dimensions—in effect, tiny fragments of material, often made of one type of semiconductor embedded in another. Quantum dots in which the wavelength of absorption and fluorescent emission of light is tuned by the nanoparticle size are being explored for uses ranging from colour displays to biomedical imaging. Films of semiconducting materials thin enough to exhibit one-dimensional quantum-confinement effects, meanwhile, are routinely used to make efficient optical devices such as lasers. Such applications have depended on the availability of techniques for precise control of particle size, composition and thickness. NSR spoke to two leading researchers in this field of quantum engineering about its development and prospects. Dieter Bimberg is founding director of the Center of Nanophotonics at the Technical University of Berlin in Germany. He pioneered the use of quantum dots in photonic devices such as lasers and optical amplifiers, as well as developing non-volatile ‘dynamic’ random-access memories (DRAMs), which retain their information when the power is switched off. Kang Wang is a professor of electrical engineering at the University of California at Los Angeles, whose work on nanoscale quantum devices has focused on electronic and magnetic properties, and in particular on the development of non-volative RAMs and the manipulation and control of electron spin as a new parameter for information processing (a technology called spintronics).

APA, Harvard, Vancouver, ISO, and other styles

19

Roy, Rajarshi, Ranjit Thapa, Gundam Sandeep Kumar, Nilesh Mazumder, Dipayan Sen, S. Sinthika, Nirmalya S. Das, and Kalyan K. Chattopadhyay. "Colossal magnetoresistance in amino-functionalized graphene quantum dots at room temperature: manifestation of weak anti-localization and doorway to spintronics." Nanoscale 8, no. 15 (2016): 8245–54. http://dx.doi.org/10.1039/c5nr09292b.

Full text

APA, Harvard, Vancouver, ISO, and other styles

20

Tyagi, Pawan, Christopher D'Angelo, and Collin Baker. "Monte Carlo and Experimental Magnetic Studies of Molecular Spintronics Devices." Nano 10, no. 04 (June 2015): 1550056. http://dx.doi.org/10.1142/s1793292015500563.

Full text

Abstract:

Molecule-based spintronics devices (MSDs) are highly promising candidates for discovering advanced logic and memory computer units. An advanced MSD will require the placement of paramagnetic molecules between the two ferromagnetic (FM) electrodes. Due to extreme fabrication challenges, only a couple of experimental studies could be performed to understand the effect of magnetic molecules on the overall magnetic and transport properties of MSDs. To date, theoretical studies mainly focused on charge and spin transport aspects of MSDs; there is a dearth of knowledge about the effect of magnetic molecules on the magnetic properties of MSDs. This paper investigates the effect of magnetic molecules, with a net spin, on the magnetic properties of 2D MSDs via Monte Carlo (MC) simulations. Our MC simulations encompass a wide range of MSDs that can be realized by establishing different kinds of magnetic interactions between molecules and FM electrodes at different temperatures. The MC simulations show that ambient thermal energy strongly influenced the molecular coupling effect on the MSD. We studied the nature and strength of molecule couplings (FM and antiferromagnetic) with the two electrodes on the magnetization, specific heat and magnetic susceptibility of MSDs. For the case when the nature of molecule interaction was FM with one electrode and antiferromagnetic with another electrode the overall magnetization shifted toward zero. In this case, the effect of molecules was also a strong function of the nature and strength of direct coupling between FM electrodes. In the case when molecules make opposite magnetic couplings with the two FM electrodes, the MSD model used for MC studies resembled with the magnetic tunnel junction based MSD. The experimental magnetic studies on these devices are in agreement with our theoretical MC simulations results. Our MC simulations will enable the fundamental understanding and designing of a wide range of novel spintronics devices utilizing a variety of molecules, nanoclusters and quantum dots as the device elements.

APA, Harvard, Vancouver, ISO, and other styles

21

Chambers, Scott A., and Young K. Yoo. "New Materials for Spintronics." MRS Bulletin 28, no. 10 (October 2003): 706–10. http://dx.doi.org/10.1557/mrs2003.210.

Full text

Abstract:

AbstractThis article introduces the October 2003 issue of MRS Bulletin on “New Materials for Spintronics.” As a result of quantum mechanics, the carriers in ferromagnetic metals such as Fe, Co, and Ni are spin-polarized due to an imbalance at the Fermi level in the number of spin-up and spin-down electrons. A carrier maintains its spin polarization as long as it does not encounter a magnetic impurity or interact with the host lattice by means of spin-orbit coupling. The discovery of optically induced, long-lived quantum coherent spin states in semiconductors has created a range of possibilities for a new class of devices that utilize spin. This discovery also points to the need for a wider range of spin-polarized materials that will be required for different device configurations. In this issue of MRS Bulletin, we focus on three classes of candidate spintronic materials and review the current state of our understanding of them: III–V and II–VI semiconductors, oxides, and Heusler alloys. The field of spin-polarized materials is growing very rapidly, and the search for new magnetic semiconductors and other suitable spin-injection materials with higher Curie temperatures is bringing spintronics closer to the realm of being practical.

APA, Harvard, Vancouver, ISO, and other styles

22

Sánchez, D., R. López, and M. S. Choi. "Spintronic Transport and Kondo Effect in Quantum Dots." Journal of Superconductivity 18, no. 2 (April 2005): 251–60. http://dx.doi.org/10.1007/s10948-005-3378-3.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Kondo, Kenji. "A Derivation of Aharonov–Casher Phase and Another Adiabatic Approximation for Pure Gauge Under General Rashba Effects." SPIN 06, no. 02 (June 2016): 1640006. http://dx.doi.org/10.1142/s2010324716400063.

Full text

Abstract:

Spin filters using spin–orbit interaction (SOI) are very important in the field of spintronics. Therefore, a theory of devices using SOI is necessary for designing the spin filters. The spin-filtering devices can be used to generate and detect spin polarized currents. Many researchers have reported on the spin-filters using linear Rashba SOI. However, the spin-filters using square and cubic Rashba SOIs are not yet reported. This is surely because the Aharonov–Casher (AC) phases acquired under square and cubic Rashba SOIs are ambiguous. In this paper, we try to derive the AC phases acquired under [Formula: see text]th order Rashba SOIs, which we call general Rashba SOIs, using non-Abelian SU (2) gauge theory. As a result, we have successfully derived these AC phases without completing the square methods which is useless except for linear Rashba SOI. In the process of derivation of AC phases, we have also found another expression of adiabatic approximation for a pure gauge. This finding will lead to the starting point for deeply understanding the adiabatic approximation. Using the above AC phases under general Rashba SOIs, we investigate the spin filter effect in Aharonov–Bohm (AB) ring with double quantum dots (QDs) under general Rashba SOIs. The spin transport is investigated from left nanowire to right nanowire in this structure within tight binding approximation. Especially, we focus on the difference of spin filter effects among general Rashba SOIs. We have obtained the penetrating magnetic flux dependence of spin polarization for the AB ring subject to general Rashba SOIs. It is found that the perfect spin filtering is achieved for all the Rashba SOIs. This result indicates that this AB ring under general Rashba SOIs can be a promising device for spin current generation without ferromagnetic metals. Moreover, this device under different order Rashba SOI behaves in totally different ways in response to penetrating magnetic flux, which is attributed to [Formula: see text] times rotation of directions of the effective magnetic field in the in-plane momentum. This fact means that we can determine the order of Rashba SOIs according to the peak position. We consider that this is very useful for many researchers.

APA, Harvard, Vancouver, ISO, and other styles

24

Guo, Hao Min, Xin Hua Li, Zhi Fei Zhao, and Yu Qi Wang. "Tunable Ferromagnetism above Room-Temperature in Self-Assembled (In,Mn)As Diluted Magnetic Semiconductor Quantum Dots on Be-Doped Al_xGa_1-XAs Template by Molecular Beam Epitaxy." Advanced Materials Research 476-478 (February 2012): 793–98. http://dx.doi.org/10.4028/www.scientific.net/amr.476-478.793.

Full text

Abstract:

With the introduction of Be-doped AlxGa1-xAs template, self-assembled In0.79Mn0.21As quantum dots samples were prepared on semi-insulating (001) GaAs substrates by molecular beam epitaxy. High quantum dots density was confirmed by the atomic force microscopy. The ferromagnetism of the samples was revealed by superconducting quantum interference device magnetometer analysis at 10K, and the Curie temperatures ranging from 292 to 314K were able to be regulated by adjusting Al content and Be dopant in Be-doped AlxGa1-xAs templates, implying the feasible application of spintronic devices.

APA, Harvard, Vancouver, ISO, and other styles

25

Prabhakar, Sanjay, and Roderick Melnik. "Tuning g-factor of electrons through spin–orbit coupling in GaAs/AlGaAs conical quantum dots." International Journal of Modern Physics B 30, no. 13 (May 19, 2016): 1642003. http://dx.doi.org/10.1142/s0217979216420030.

Full text

Abstract:

We investigate band structures of [Formula: see text] three-dimensional conical quantum dots (QDs). In particular, we explore the influence of the Rashba and Dresselhaus spin–orbit couplings in the variation of effective [Formula: see text]-factor of electrons in such QDs. We demonstrate that the interplay between the Rashba and Dresselhaus spin–orbit couplings can provide further insight into underlying physical phenomena and assist in the design of quantum logic gates for the application in spintronic devices.

APA, Harvard, Vancouver, ISO, and other styles

26

Vail, J. M., T. Haroon, J. Hernandez-Melgar, D. K. Chevrier, and R. Pandey. "Nitrogen vacancy and oxygen impurity in AlN: spintronic quantum dots." Radiation Effects and Defects in Solids 164, no. 10 (October 2009): 585–91. http://dx.doi.org/10.1080/10420150903188443.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Bandyopadhyay, S., and M. Cahay. "Does Organic Spintronics Have a Role in Quantum Information Processing?" Journal of Computational and Theoretical Nanoscience 8, no. 3 (March 1, 2011): 464–70. http://dx.doi.org/10.1166/jctn.2011.1711.

Full text

APA, Harvard, Vancouver, ISO, and other styles

28

Wilczyński, M., R. Świrkowicz, W. Rudziński, J. Barnaś, and V. Dugaev. "Quantum dots attached to ferromagnetic leads: possibility of new spintronic devices." Journal of Magnetism and Magnetic Materials 290-291 (April 2005): 209–12. http://dx.doi.org/10.1016/j.jmmm.2004.11.184.

Full text

APA, Harvard, Vancouver, ISO, and other styles

29

Kim, J., P. Matagne, J. P. Leburton, R. M. Martin, T. Hatano, and S. Tarucha. "Engineering quantum confinement and orbital couplings in laterally coupled vertical quantum dots for spintronic applications." IEEE Transactions On Nanotechnology 5, no. 4 (July 2006): 343–49. http://dx.doi.org/10.1109/tnano.2006.877017.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Kushwaha, Manvir S. "Magneto-optics of single Rashba spintronic quantum dots subjected to a perpendicular magnetic field: Fundamentals." Journal of Applied Physics 104, no. 8 (October 15, 2008): 083714. http://dx.doi.org/10.1063/1.3003086.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Ye, Cheng-Zhi, Wei-Tao Lu, and Chang-Tan Xu. "Spin accumulation in the parallel-coupled double quantum dots with Rashba spin-orbit interaction connected with ferromagnetic and superconducting electrodes." Modern Physics Letters B 29, no. 25 (September 20, 2015): 1550145. http://dx.doi.org/10.1142/s0217984915501456.

Full text

Abstract:

Using the standard nonequilibrium Green’s function techniques, we investigate the effect of Rashba spin-orbit interaction (RSOI) and ferromagnetic electrode on the spin accumulation in the parallel-coupled double quantum dots coupled with a ferromagnetic and a superconducting electrode. It is demonstrated that FM electrode cannot induce the spin polarization of Andreev reflection (AR) current, but can induce the spin accumulation in the QDs. However, RSOI can lead to the spin polarization of AR current as well as the spin accumulation in the QDs. In the existence of RSOI, complete spin-polarized QD can be achieved with negative bias voltage [Formula: see text], which is the most significant advantage of our device. When energy levels [Formula: see text] and the interdot coupling strength [Formula: see text], the maximum value of spin accumulation in this paper is obtained as 0.7. The results may be useful on the design of spintronic devices.

APA, Harvard, Vancouver, ISO, and other styles

32

Ludwig, A., R. Roescu, A. K. Rai, K. Trunov, F. Stromberg, M. Li, H. Soldat, et al. "Electrical spin injection in InAs quantum dots at room temperature and adjustment of the emission wavelength for spintronic applications." Journal of Crystal Growth 323, no. 1 (May 2011): 376–79. http://dx.doi.org/10.1016/j.jcrysgro.2010.09.087.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Meng, Dechao, Hongli Guo, Zhangzhang Cui, Chao Ma, Jin Zhao, Jiangbo Lu, Hui Xu, et al. "Strain-induced high-temperature perovskite ferromagnetic insulator." Proceedings of the National Academy of Sciences 115, no. 12 (March 5, 2018): 2873–77. http://dx.doi.org/10.1073/pnas.1707817115.

Full text

Abstract:

Ferromagnetic insulators are required for many new magnetic devices, such as dissipationless quantum-spintronic devices, magnetic tunneling junctions, etc. Ferromagnetic insulators with a high Curie temperature and a high-symmetry structure are critical integration with common single-crystalline oxide films or substrates. So far, the commonly used ferromagnetic insulators mostly possess low-symmetry structures associated with a poor growth quality and widespread properties. The few known high-symmetry materials either have extremely low Curie temperatures (≤16 K), or require chemical doping of an otherwise antiferromagnetic matrix. Here we present compelling evidence that the LaCoO3 single-crystalline thin film under tensile strain is a rare undoped perovskite ferromagnetic insulator with a remarkably high TC of up to 90 K. Both experiments and first-principles calculations demonstrate tensile-strain–induced ferromagnetism which does not exist in bulk LaCoO3. The ferromagnetism is strongest within a nearly stoichiometric structure, disappearing when the Co2+ defect concentration reaches about 10%. Significant impact of the research includes demonstration of a strain-induced high-temperature ferromagnetic insulator, successful elevation of the transition over the liquid-nitrogen temperature, and high potential for integration into large-area device fabrication processes.

APA, Harvard, Vancouver, ISO, and other styles

34

Kuznetsova, Vera, Yulia Gromova, Marina Martinez-Carmona, Finn Purcell-Milton, Elena Ushakova, Sergei Cherevkov, Vladimir Maslov, and Yurii K. Gun’ko. "Ligand-induced chirality and optical activity in semiconductor nanocrystals: theory and applications." Nanophotonics 10, no. 2 (November 9, 2020): 797–824. http://dx.doi.org/10.1515/nanoph-2020-0473.

Full text

Abstract:

AbstractChirality is one of the most fascinating occurrences in the natural world and plays a crucial role in chemistry, biochemistry, pharmacology, and medicine. Chirality has also been envisaged to play an important role in nanotechnology and particularly in nanophotonics, therefore, chiral and chiroptical active nanoparticles (NPs) have attracted a lot of interest over recent years. Optical activity can be induced in NPs in several different ways, including via the direct interaction of achiral NPs with a chiral molecule. This results in circular dichroism (CD) in the region of the intrinsic absorption of the NPs. This interaction in turn affects the optical properties of the chiral molecule. Recently, studies of induced chirality in quantum dots (QDs) has deserved special attention and this phenomenon has been explored in detail in a number of important papers. In this article, we review these important recent advances in the preparation and formation of chiral molecule–QD systems and analyze the mechanisms of induced chirality, the factors influencing CD spectra shape and the intensity of the CD, as well as the effect of QDs on chiral molecules. We also consider potential applications of these types of chiroptical QDs including sensing, bioimaging, enantioselective synthesis, circularly polarized light emitters, and spintronic devices. Finally, we highlight the problems and possibilities that can arise in research areas concerning the interaction of QDs with chiral molecules and that a mutual influence approach must be taken into account particularly in areas, such as photonics, cell imaging, pharmacology, nanomedicine and nanotoxicology.

APA, Harvard, Vancouver, ISO, and other styles

35

Droth, Matthias, and Guido Burkard. "ChemInform Abstract: Spintronics with Graphene Quantum Dots." ChemInform 47, no. 28 (June 2016). http://dx.doi.org/10.1002/chin.201628284.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Meier, Florian, Veronica Cerletti, Oliver Gywat, Daniel Loss, and D. D. Awschalom. "Molecular spintronics: Coherent spin transfer in coupled quantum dots." Physical Review B 69, no. 19 (May 26, 2004). http://dx.doi.org/10.1103/physrevb.69.195315.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

Makdey, Swapnali, Rajendra Patrikar, and Mohammad Farukh Hashmi. "Modeling and implementation of spin diode based on two dimensional materials using Monte Carlo sampling method." Circuit World ahead-of-print, ahead-of-print (August 3, 2020). http://dx.doi.org/10.1108/cw-05-2020-0089.

Full text

Abstract:

Purpose A “spin-diode” is the spintronics equivalent of an electrical diode: applying an external magnetic field greater than the limit of spin-diode BT flips the spin-diode between an isolating state and a conducting state [1]. While conventional electrical diodes are two-terminal devices with electrical current between the two terminals modulated by an electrical field, these two-terminal magneto resistive devices can generally be referred to as “spin-diodes” in which a magnetic field modulates the electrical current between the two terminals. Design/methodology/approach Current modulation and rectification are an important subject of electronics as well as spintronics spin diode is two-terminal magnetoresistive devices in which change in resistance in response to an applied magnetic field; this magnetoresistance occurs due to a variety of phenomena and with varying magnitudes and directions. Findings In this paper, an efficient rectifying spin diode is introduced. The resulting spin diode is formed from graphene gallium and indium quantum dots and antimony-doped molybdenum disulfide. Converting an alternating bias voltage to direct current is the main achievement of this model device with an additional profit of rectified spin-current. The non-equilibrium density functional theory with a Monte Carlo sampling method is used to evaluate the flow of electrons and rectification ratio of the system. Originality/value The results indicate that spin diode displaying both spin-current and charge-current rectification should be possible and may find practical application in nanoscale devices that combine logic and memory functions.

APA, Harvard, Vancouver, ISO, and other styles

38

Krompiewski, Stefan. "Remarks on theoretical modelling of spin-dependent electronic transport in carbon nanotubes and graphene." Open Physics 9, no. 2 (January 1, 2011). http://dx.doi.org/10.2478/s11534-010-0119-4.

Full text

Abstract:

AbstractThis contribution reports on charge and spin transport through graphene nanoribbons (GrNs) and carbon nanotubes (CNTs). The paper focuses on the giant magnetoresistance effect in these materials, and their potential usefulness for spintronic applications. As examples, the following devices are shortly discussed: GrNs in the ballistic transport regime, a CNT-based Schottky-barrier field effect transistor (CNT SB-FET), as well as CNT quantum dots in the Coulomb blockade limit.

APA, Harvard, Vancouver, ISO, and other styles

39

Weymann, Ireneusz. "Finite-temperature spintronic transport through Kondo quantum dots: Numerical renormalization group study." Physical Review B 83, no. 11 (March 21, 2011). http://dx.doi.org/10.1103/physrevb.83.113306.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Li, Yahui, Chen Li, Haochen Tong, Tao Chen, Guangyang Li, Shizhe Huang, Shumin Tang, et al. "Deposition amount effects on the microstructure of ion-beam-sputtering grown Mn0.03Ge0.97 quantum dots for spintronic applications." Nanotechnology, December 18, 2020. http://dx.doi.org/10.1088/1361-6528/abd50b.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Khusyainov, Dinar, Sergei Ovcharenko, Mikhail Gaponov, Arseniy Buryakov, Alexey Klimov, Nicolas Tiercelin, Philippe Pernod, et al. "Polarization control of THz emission using spin-reorientation transition in spintronic heterostructure." Scientific Reports 11, no. 1 (January 12, 2021). http://dx.doi.org/10.1038/s41598-020-80781-5.

Full text

Abstract:

AbstractPolarization of electromagnetic waves plays an extremely important role in interaction of radiation with matter. In particular, interaction of polarized waves with ordered matter strongly depends on orientation and symmetry of vibrations of chemical bonds in crystals. In quantum technologies, the polarization of photons is considered as a “degree of freedom”, which is one of the main parameters that ensure efficient quantum computing. However, even for visible light, polarization control is in most cases separated from light emission. In this paper, we report on a new type of polarization control, implemented directly in a spintronic terahertz emitter. The principle of control, realized by a weak magnetic field at room temperature, is based on a spin-reorientation transition (SRT) in an intermetallic heterostructure TbCo2/FeCo with uniaxial in-plane magnetic anisotropy. SRT is implemented under magnetic field of variable strength but of a fixed direction, orthogonal to the easy magnetization axis. Variation of the magnetic field strength in the angular (canted) phase of the SRT causes magnetization rotation without changing its magnitude. The charge current excited by the spin-to-charge conversion is orthogonal to the magnetization. As a result, THz polarization rotates synchronously with magnetization when magnetic field strength changes. Importantly, the radiation intensity does not change in this case. Control of polarization by SRT is applicable regardless of the spintronic mechanism of the THz emission, provided that the polarization direction is determined by the magnetic moment orientation. The results obtained open the prospect for the development of the SRT approach for THz emission control.

APA, Harvard, Vancouver, ISO, and other styles

42

Tang, Li-Wen, and Wei-Guo Mao. "Electronic Transport Through Double Quantum Dot Coupled to Majorana Bound States and Ferromagnetic Leads." Frontiers in Physics 8 (January 18, 2021). http://dx.doi.org/10.3389/fphy.2020.616107.

Full text

Abstract:

We have studied theoretically the properties of electrical current and tunnel magnetoresistance (TMR) through a serially connected double quantum dot (DQD) sandwiched between two ferromagnetic leads by using the nonequilibrium Green’s function technique. We consider that each of the DQD couples to one mode of the Majorana bound states (MBSs) formed at the ends of a topological superconductor nanowire with spin-dependent coupling strength. By adjusting the sign of the spin polarization of dot–MBS coupling strength and the arrangement of magnetic moments of the two leads, the currents’ magnitude can be effectively enhanced or suppressed. Under some conditions, a negative TMR emerges which is useful in detection of the MBSs, a research subject currently under extensive investigations. Moreover, the amplitude of the TMR can be adjusted in a large regime by variation of several system parameters, such as direct hybridization strength between the MBSs or the dots and the positions of the dots’ energy levels. Such tunable currents and TMR may also find use in high-efficiency spintronic devices or information processes.

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!