Log in

Relevant bibliographies by topics / Quantum well growth methodology / Journal articles

To see the other types of publications on this topic, follow the link: Quantum well growth methodology.

Journal articles on the topic 'Quantum well growth methodology'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Quantum well growth methodology.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Md Sahar, Mohd Ann Amirul Zulffiqal, Zainuriah Hassan, Sha Shiong Ng, et al. "Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes." Microelectronics International 38, no. 3 (2021): 119–26. http://dx.doi.org/10.1108/mi-02-2021-0017.

Full text

Abstract:

Purpose The aims of this paper is to study the effects of the V/III ratio of indium gallium nitride (InGaN) quantum wells (QWs) on the structural, optical and electrical properties of near-ultraviolet light-emitting diode (NUV-LED). Design/methodology/approach InGaN-based NUV-LED is successfully grown on the c-plane patterned sapphire substrate at atmospheric pressure using metal organic chemical vapor deposition. Findings The indium composition and thickness of InGaN QWs increased as the V/III ratio increased from 20871 to 11824, according to high-resolution X-ray diffraction. The V/III ratio

APA, Harvard, Vancouver, ISO, and other styles

2

Corea, Mónica De la Luz. "Optical properties of CdSe nanoparticles synthesized by hot injection in air." Revista Mexicana de Física 64, no. 3 (2018): 275. http://dx.doi.org/10.31349/revmexfis.64.275.

Full text

Abstract:

The hot injection technique is used to produce CdSe nanoparticles with quantum dot properties. Several reports have considered an inert atmosphere (nitrogen) as necessary for a successful synthesis, which complicates the experimental set-up. In this work, CdSe nanoparticles were synthesized by hot injection in air instead of in nitrogen, simplifying the experimental set-up. To avoid undesirable interactions with oxygen, well-defined concentrations of the organic species were used during the synthesis, but air still influenced the growth rate of the particles. To establish a comparison, the sam

APA, Harvard, Vancouver, ISO, and other styles

3

Bishay, Peter L., Bhavin Sampat, Jan Sladek, Ernian Pan, and Vladimir Sladek. "Effect of Lattice Mismatch Strain Grading on the Electromechanical Behavior of Functionally Graded Quantum Dots." Key Engineering Materials 759 (January 2018): 71–75. http://dx.doi.org/10.4028/www.scientific.net/kem.759.71.

Full text

Abstract:

A fully coupled thermo-electro-mechanical models of cylindrical and truncated conical GaN/AlN Functionally Graded Quantum Dot (FGQD) systems with and without WL are analyzed in this study to determine the effect of lattice mismatch strain grading on the electromechanical behavior of the FGQD system. This has a technological and fundamental importance because the production methodology adopted for manufacturing QDs enables the composition of the QD material to be graded in the growth direction, so the material properties as well as the induced mismatch strain between the QD and the carrier matr

APA, Harvard, Vancouver, ISO, and other styles

4

Bishay, Peter L., Jan Sladek, Ernian Pan, and Vladimir Sladek. "Analysis of Functionally Graded Quantum-Dot Systems with Graded Lattice Mismatch Strain." Journal of Computational and Theoretical Nanoscience 15, no. 2 (2018): 542–50. http://dx.doi.org/10.1166/jctn.2018.7120.

Full text

Abstract:

The production methodology of alloyed quantum-dot (QD) structures introduced a new design degree of freedom for QD arrays which is the grading of the material composition in the QD growth direction. This enables QDs of same size to generate different colors when exposed to blue light based on the grading of each QD. The grading of the material composition affects the material properties as well as the lattice mismatch strain between the QDs and the host matrix. Previous studies modeled graded QDs by just considering graded lattice mismatch strain while the material properties were kept uniform

APA, Harvard, Vancouver, ISO, and other styles

5

Garg, Kailash Chandra, and Suresh Kumar. "Bibliometric assessment of the global research output inJatropha curcas Linnas reflected by papers indexed in Science Citation Index-Expanded." Performance Measurement and Metrics 20, no. 1 (2019): 17–26. http://dx.doi.org/10.1108/pmm-07-2018-0019.

Full text

Abstract:

PurposeThe purpose of this paper is to examine the quantum of research papers and the citations these papers received for the plantJatropha curcas Linn.Design/methodology/approachArticles published onJatropha curcas Linnduring 1987–2016 were downloaded from Science Citation Index-Expanded (SCIE) by using the keyword Jatropha* on October 18, 2017. The search resulted in 4,276 records in all. The authors analyzed only 4,111 documents which were published as review articles, research articles and proceeding papers using the complete count methodology. The data were analyzed to examine the pattern

APA, Harvard, Vancouver, ISO, and other styles

6

Schär, Christoph, Oliver Fuhrer, Andrea Arteaga, et al. "Kilometer-Scale Climate Models: Prospects and Challenges." Bulletin of the American Meteorological Society 101, no. 5 (2020): E567—E587. http://dx.doi.org/10.1175/bams-d-18-0167.1.

Full text

Abstract:

Abstract Currently major efforts are underway toward refining the horizontal resolution (or grid spacing) of climate models to about 1 km, using both global and regional climate models (GCMs and RCMs). Several groups have succeeded in conducting kilometer-scale multiweek GCM simulations and decadelong continental-scale RCM simulations. There is the well-founded hope that this increase in resolution represents a quantum jump in climate modeling, as it enables replacing the parameterization of moist convection by an explicit treatment. It is expected that this will improve the simulation of the

APA, Harvard, Vancouver, ISO, and other styles

7

Matyushok, Vladimir M., Vera A. Krasavina, and Sergey V. Matyushok. "Global artificial intelligence systems and technology market: formation and development trends." RUDN Journal of Economics 28, no. 3 (2020): 505–21. http://dx.doi.org/10.22363/2313-2329-2020-28-3-505-521.

Full text

Abstract:

Every day more and more companies rely on artificial intelligence, from small startups to large companies, among which stand out not only the IT giants Google, Microsoft, Facebook, IBM, but even those that seemingly far from this topic - for example, General Motors and Boeing created a joint laboratory for AI research. It becomes obvious that AI technology is the real mainstream of our time. The article examines the global market for artificial intelligence systems and technologies. The authors described the peculiarities of the formation of this market and the main trends and segments in its

APA, Harvard, Vancouver, ISO, and other styles

8

Rajagopalan, Jayaraman, and Sam Solaimani. "Lean management in Indian industry: an exploratory research study using a longitudinal survey." International Journal of Lean Six Sigma 11, no. 3 (2019): 515–42. http://dx.doi.org/10.1108/ijlss-12-2017-0140.

Full text

Abstract:

Purpose The practice of lean management (LM) principles has given firms, from a variety of sectors, quantum jumps in productivity and performance. India is at the cusp of a major leap in economic growth, and adoption of LM is a must for ramping up the rate of growth of the GDP speedily, if the government is really intent on achieving its objective of becoming the third or fourth largest economy soon. This paper aims to study the status of implementation of LM in the LM Leaders (LML’s) in the Indian industry, to understand if they are ready to accept the challenges ahead. Design/methodology/app

APA, Harvard, Vancouver, ISO, and other styles

9

Grützmacher, Detlev. "Growth and analysis of quantum well structures." Journal of Crystal Growth 107, no. 1-4 (1991): 520–30. http://dx.doi.org/10.1016/0022-0248(91)90515-7.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Rajagopalan, Jayaraman. "An empirical longitudinal study of adoption of lean management in India." TQM Journal 32, no. 6 (2020): 1285–306. http://dx.doi.org/10.1108/tqm-11-2019-0269.

Full text

Abstract:

PurposeTo identify the factors that need to be addressed by Indian industry to steeply ramp up its production and productivity in the coming years, so as to achieve the goal of the country becoming a 5 trillion dollar economy by 2025.Design/methodology/approachLean Management Leaders in Indian Industry (LMLII), i.e. those companies in India who are well known for having adopted TQM, BE and Lean methods for many years, and achieved success in their business) in Indian industry were selected and surveys were done between 2013 and 2017, to assess the status of LM adoption, by using the LESAT (ver

APA, Harvard, Vancouver, ISO, and other styles

11

Fischer, Inga A., Torsten Wendav, Lion Augel, et al. "Growth and characterization of SiGeSn quantum well photodiodes." Optics Express 23, no. 19 (2015): 25048. http://dx.doi.org/10.1364/oe.23.025048.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Thompson, Phillip E., David Godbey, Karl Hobart, et al. "Parametric Investigation ofSi1-xGex/SiMultiple Quantum Well Growth." Japanese Journal of Applied Physics 33, Part 1, No. 4B (1994): 2317–21. http://dx.doi.org/10.1143/jjap.33.2317.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

House, J. L., D. J. Dougherty, G. S. Petrich, L. A. Kolodziejski, E. P. Ippen, and G. C. Hua. "Growth and characterization of single quantum well structures." Applied Surface Science 104-105 (September 1996): 472–78. http://dx.doi.org/10.1016/s0169-4332(96)00189-4.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Mukai, Seiji, Masanobu Watanabe, Hideo Itoh, Hiroyoshi Yajima, Tomomi Yano, and Jong-Chun Woo. "LPE Growth of AlGaAs-GaAs Quantum Well Heterostructures." Japanese Journal of Applied Physics 28, Part 2, No. 10 (1989): L1725—L1727. http://dx.doi.org/10.1143/jjap.28.l1725.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Chen, Zonggui, Dianzhau Sun, Jiben Liang, et al. "MBE growth of quantum well and superlattice structures." Superlattices and Microstructures 3, no. 3 (1987): 325–28. http://dx.doi.org/10.1016/0749-6036(87)90080-2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Imam, N., E. N. Glytsis, T. K. Gaylord, Kwong-Kit Choi, P. G. Newman, and L. Detter-Hoskin. "Quantum-well infrared photodetector structure synthesis: methodology and experimental verification." IEEE Journal of Quantum Electronics 39, no. 3 (2003): 468–77. http://dx.doi.org/10.1109/jqe.2002.808162.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

Yang, G. F., P. Chen, Z. G. Yu, et al. "Temperature dependent growth of InGaN/GaN single quantum well." Superlattices and Microstructures 52, no. 3 (2012): 349–56. http://dx.doi.org/10.1016/j.spmi.2012.05.018.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Mishurnyi, V. A., F. de Anda, V. A. Elyukhin, and I. C. Hernandez. "Growth of Quantum-Well Heterostructures by Liquid Phase Epitaxy." Critical Reviews in Solid State and Materials Sciences 31, no. 1-2 (2006): 1–13. http://dx.doi.org/10.1080/10408430500538695.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Shen, Aidong, Arvind Pawan Ravikumar, Guopeng Chen, et al. "MBE growth of ZnCdSe/ZnCdMgSe quantum-well infrared photodetectors." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 31, no. 3 (2013): 03C113. http://dx.doi.org/10.1116/1.4794383.

Full text

APA, Harvard, Vancouver, ISO, and other styles

20

Miyamoto, Tomoyuki, Kanji Takeuchi, Takeo Kageyama, Fumio Koyama, and Kenichi Iga. "GaInNAs/GaAs Quantum Well Growth by Chemical Beam Epitaxy." Japanese Journal of Applied Physics 37, Part 1, No. 1 (1998): 90–91. http://dx.doi.org/10.1143/jjap.37.90.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

Meiying, Kong, Sun Dianzhau, Liang Jiben, Huang Yunneng, and Zhen Yiepen. "Growth of high quality gaas-aigaas quantum well structures." Journal of Electronic Materials 16, no. 6 (1987): 417–21. http://dx.doi.org/10.1007/bf02655495.

Full text

APA, Harvard, Vancouver, ISO, and other styles

22

Koguchi, Nobuyuki, Satoshi Takahashi, and Toyohiro Chikyow. "New MBE growth method for InSb quantum well boxes." Journal of Crystal Growth 111, no. 1-4 (1991): 688–92. http://dx.doi.org/10.1016/0022-0248(91)91064-h.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Horváth, Zs J., L. Dózsa, Vo Van Tuyen, et al. "Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures." Thin Solid Films 367, no. 1-2 (2000): 89–92. http://dx.doi.org/10.1016/s0040-6090(00)00701-x.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

Huo Da-Yun, Shi Zhen-Wu, Zhang Wei, Tang Shen-Li, and Peng Chang-Si. "Barrier growth temperature of InGaAs/AlGaAs-quantum well infrared photodetector." Acta Physica Sinica 66, no. 6 (2017): 068501. http://dx.doi.org/10.7498/aps.66.068501.

Full text

APA, Harvard, Vancouver, ISO, and other styles

25

Zhou, Wu, Yu-Yang Zhang, Jianyi Chen, et al. "Dislocation-Driven Growth of Two-Dimensional Lateral Quantum Well Superlattices." Microscopy and Microanalysis 24, S1 (2018): 88–89. http://dx.doi.org/10.1017/s1431927618000934.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Fissel, A., U. Kaiser, B. Schröter, W. Richter, and F. Bechstedt. "MBE growth and properties of SiC multi-quantum well structures." Applied Surface Science 184, no. 1-4 (2001): 37–42. http://dx.doi.org/10.1016/s0169-4332(01)00473-1.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Nakatani, Y., Y. K. Zhou, M. Sano, S. Emura, S. Hasegawa, and H. Asahi. "Growth and Characterization of GaDyN/AlGaN Multi-Quantum Well Structures." e-Journal of Surface Science and Nanotechnology 10 (2012): 499–502. http://dx.doi.org/10.1380/ejssnt.2012.499.

Full text

APA, Harvard, Vancouver, ISO, and other styles

28

Zhou, Wu, Yu-Yang Zhang, Jianyi Chen, et al. "Dislocation-driven growth of two-dimensional lateral quantum-well superlattices." Science Advances 4, no. 3 (2018): eaap9096. http://dx.doi.org/10.1126/sciadv.aap9096.

Full text

APA, Harvard, Vancouver, ISO, and other styles

29

Williams, R. Stanley, David K. Shuh, and Yusaburo Segawa. "Growth and luminescence spectroscopy of a CuCl quantum well structure." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6, no. 3 (1988): 1950–52. http://dx.doi.org/10.1116/1.575212.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Huang, Wenjun, Jianliang Huang, Yanhua Zhang, et al. "Growth and Electron Mobility of Inverted InAs/GaSb Quantum Well." Journal of Nanoscience and Nanotechnology 18, no. 11 (2018): 7532–35. http://dx.doi.org/10.1166/jnn.2018.16051.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Fuyuki, Takuma, Yoriko Tominaga, Kunishige Oe, and Masahiro Yoshimoto. "Growth of GaAs1-xBix/AlyGa1-yAs Multi-Quantum-Well Structures." Japanese Journal of Applied Physics 49, no. 7 (2010): 070211. http://dx.doi.org/10.1143/jjap.49.070211.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

Podpirka, Adrian A., Javad Shabani, Michael B. Katz, et al. "Growth and characterization of (110) InAs quantum well metamorphic heterostructures." Journal of Applied Physics 117, no. 24 (2015): 245313. http://dx.doi.org/10.1063/1.4922985.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Kasai, J., T. Kitatani, K. Adachi, K. Nakahara, and M. Aoki. "Growth of low-threshold GaInNAs/GaAs triple-quantum-well lasers." Journal of Crystal Growth 301-302 (April 2007): 545–47. http://dx.doi.org/10.1016/j.jcrysgro.2006.11.230.

Full text

APA, Harvard, Vancouver, ISO, and other styles

34

Wang, C. A., and H. K. Choi. "OMVPE growth of GaInAsSb/AlGaAsSb for quantum-well diode lasers." Journal of Electronic Materials 26, no. 10 (1997): 1231–36. http://dx.doi.org/10.1007/s11664-997-0025-8.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Ludewig, P., N. Knaub, W. Stolz, and K. Volz. "MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures." Journal of Crystal Growth 370 (May 2013): 186–90. http://dx.doi.org/10.1016/j.jcrysgro.2012.07.002.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Krishnamurthy, D., S. Shanthi, K. M. Kim, et al. "MBE growth and characterization of TlInGaAsN double quantum well structures." Journal of Crystal Growth 311, no. 7 (2009): 1733–38. http://dx.doi.org/10.1016/j.jcrysgro.2008.12.002.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

Kim, Ki-Sung, Sung-Jin Lim, Ki-Hong Kim, Jae-Ryung Yoo, Taek Kim, and Yong-Jo Park. "MOVPE growth optimization for optically efficient GaInNAs quantum well structure." Journal of Crystal Growth 273, no. 3-4 (2005): 368–74. http://dx.doi.org/10.1016/j.jcrysgro.2004.09.041.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Hernandez-Mainet, Luis, Guopeng Chen, Amir Zangiabadi, Aidong Shen, and Maria C. Tamargo. "Growth and characterization of II-VI semiconductor multilayer quantum-well structures for two-color quantum well infrared photodetector applications." Journal of Vacuum Science & Technology A 39, no. 3 (2021): 033205. http://dx.doi.org/10.1116/6.0000947.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Tian, Aiqin, Jianping Liu, Liqun Zhang, et al. "Significant increase of quantum efficiency of green InGaN quantum well by realizing step-flow growth." Applied Physics Letters 111, no. 11 (2017): 112102. http://dx.doi.org/10.1063/1.5001185.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

WANG, JIN, J. B. JEON, K. W. KIM, and M. A. LITTLEJOHN. "OPTOELECTRONIC PROPERTIES OF STRAINED WURTZITE GaN QUANTUM-WELL LASERS." International Journal of High Speed Electronics and Systems 09, no. 04 (1998): 1189–209. http://dx.doi.org/10.1142/s0129156498000464.

Full text

Abstract:

Fundamental optical properties of strained wurtzite GaN quantum-well laser are calculated and evaluated near the threshold condition. The formalism is based on a self-consistent methodology that couples an envelope-function Hamiltonian for band structures with photon-carrier rate equations. Details of energy band structure, optical gain, and modulation response are studied comprehensively under the effects of strain-induced piezoelectric fields, bandgap renormalization, and the carrier capture processes. Comparisons between different approximations show that self-consistency is essential to ac

APA, Harvard, Vancouver, ISO, and other styles

41

McCrary, V. R., J. W. Lee, S. N. G. Chu, et al. "Growth of InGaAsP/InP single‐quantum‐well and multiple‐quantum well structures by low‐pressure metal‐organic chemical vapor deposition." Journal of Applied Physics 69, no. 10 (1991): 7267–72. http://dx.doi.org/10.1063/1.347624.

Full text

APA, Harvard, Vancouver, ISO, and other styles

42

You Minghui, 尤明慧, 高欣 Gao Xin, 李占国 Li Zhanguo та ін. "Growth 2.3 μm InGaAsSb/AlGaAsSb multi-quantum-well via AlSb buffers". High Power Laser and Particle Beams 22, № 8 (2010): 1716–18. http://dx.doi.org/10.3788/hplpb20102208.1716.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Reed, M. A., J. W. Lee, R. K. Aldert, and A. E. Wetsel. "Investigation of quantum well and tunnel barrier growth by resonant tunneling." Journal of Materials Research 1, no. 2 (1986): 337–42. http://dx.doi.org/10.1557/jmr.1986.0337.

Full text

Abstract:

We present the first known systematic mapping of quantum well and tunnel barrier thicknesses in a resonant tunneling structure by transport measurements. The technique derives a 1 Å averaged resolution for quantum well and barrier thicknesses, independently for the quantum well and adjacent tunnel barriers. Contour maps of the structure reveal an asymmetric shallow ring growth structure for one of the epilayers. Current-voltage characteristics and temperature dependence of the resonant tunneling structures will also be discussed.

APA, Harvard, Vancouver, ISO, and other styles

44

Survase, Laxman, Manohar Nyayate, and Sen Mathew. "Growth and characterization of Si doped InGaAs/GaAs Single quantum well." IOSR Journal of Applied Physics 6, no. 6 (2014): 47–50. http://dx.doi.org/10.9790/4861-06614750.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

Menkara, H. M., R. N. Bicknell-Tassius, R. Benz, and C. J. Summers. "MBE growth and characterization of doped multiple quantum well avalanche photodiodes." Journal of Crystal Growth 175-176 (May 1997): 983–89. http://dx.doi.org/10.1016/s0022-0248(96)01181-5.

Full text

APA, Harvard, Vancouver, ISO, and other styles

46

Chalmers, S. A., K. P. Killeen, and E. D. Jones. "Accurate multiple‐quantum‐well growth using real‐time optical flux monitoring." Applied Physics Letters 65, no. 1 (1994): 4–6. http://dx.doi.org/10.1063/1.113070.

Full text

APA, Harvard, Vancouver, ISO, and other styles

47

Shirasawa, Tomoe, Noriaki Mochida, Akira Inoue, et al. "Interface control of GaN/AlGaN quantum well structures in MOVPE growth." Journal of Crystal Growth 189-190 (June 1998): 124–27. http://dx.doi.org/10.1016/s0022-0248(98)00184-5.

Full text

APA, Harvard, Vancouver, ISO, and other styles

48

Zeng, K. C., J. Li, J. Y. Lin, and H. X. Jiang. "Optimizing growth conditions for GaN/AlxGa1−xN multiple quantum well structures." Applied Physics Letters 76, no. 7 (2000): 864–66. http://dx.doi.org/10.1063/1.125610.

Full text

APA, Harvard, Vancouver, ISO, and other styles

49

Wu, Jeng-Shian, Yan-Kuin Su, Jia-Rong Chang, Chuing-Liang Lin, Hsin-Chuan Wang, and Duen-Hwa Jaw. "MOVPE Growth and Characterization of AlInAsSb/GaInAsSb multiple-quantum-well structure." Japanese Journal of Applied Physics 39, S1 (2000): 222. http://dx.doi.org/10.7567/jjaps.39s1.222.

Full text

APA, Harvard, Vancouver, ISO, and other styles

50

Hums, Christoph, Aniko Gadanecz, Armin Dadgar, et al. "AlInN/GaN based multi quantum well structures - growth and optical properties." physica status solidi (c) 6, S2 (2009): S451—S454. http://dx.doi.org/10.1002/pssc.200880899.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!