Dissertations / Theses: 'Quantum wells. Infrared detectors'

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Lantz, Kevin R. "Two color photodetector using an asymmetric quantum well structure." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FLantz.pdf.

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Konukbay, Atakan. "Design of a voltage tunable broadband quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FKonukbay.pdf.

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Palaferri, Danièle. "Antenna resonators for quantum infrared detectors and fast heterodyne receivers." Thesis, Sorbonne Paris Cité, 2018. http://www.theses.fr/2018USPCC083/document.

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Ce travail de thèse porte sur la conception et la réalisation de méta-structures pour l’amelioration des performances de détecteurs dans les gammes spectrales du moyen infrarouge et du térahertz (THz). Ces méta-structures sont des matrices de résonateurs métalliques qui actent aussi comme antennes, permettant une meilleure collection des photons et un plus fort confinement du champ électrique. Dans ce manuscrit, j’examine les résultats expérimentaux concernant deux photo-detecteurs infrarouges à puits quantiques (QWIP) résonants à une longueur d'onde de 55.5 µm (5.4 THz) et de 8.6 µm, implémentés dans des réseaux d’antennes patch. La responsivité, la détectivité et les performances thermiques des dispositifs en microcavité sont systématiquement comparées au même détecteur fabriqué en géométrie standard ‘mesa’, pour lequel le rayonnement infrarouge est couplé par le substrat. La cohérence du modèle est évaluée en comparant le gain photoconducteur de chaque structure QWIP. Dans le moyen infrarouge, le fonctionnement à température ambiante avec une source de radiation thermique est démontré pour la première fois. De plus, en exploitant la courte durée de vie des porteurs dans la zone de QWIP, une détection hétérodyne à température ambiante a été démontrée jusqu’aux fréquences de quelques GHz, limitée uniquement par la fréquence de coupure du circuit externe. Dans la dernière partie de ce manuscrit, plusieurs perspectives sont discutées concernant des structures de détecteurs quantiques couplés à la géométrie de résonateurs patch et des architectures inspirées des métamateriaux, avec la perspective d’améliorer davantage les performances des photodétécteurs The present thesis manuscript is about the conception and the realisation of metastructures for the improvement of detector performances in the mid-infrared and terahertz (THz) spectral ranges. These meta-structures are arrays of metal resonators that also act as antennas, allowing a better collection of photons and a stronger confinement of the electric field. In this manuscript, I examine the experimental results regarding a 55.5 µm (5.4 THz) and a 8.6 µm quantum well infrared photodetectors (QWIP), implemented into patch-antennae arrays. The responsivity, the specific detectivity and the thermal performances of the antenna-coupled devices are systematically compared to the same detector processed in standard substrate-coupled ‘mesa’ geometry. In the mid-infrared, the room temperature operation using a thermal radiation source is reported for the first time. Moreover, exploiting the short carrier lifetime in semiconductor quantum wells, a room temperature heterodyne detection is demonstrated, at frequencies up to few GHz, limited only by the cut-off frequency of the external circuit. In the last part of this work, several perspectives are discussed, regarding alternative quantum detector structures coupled to the patch resonators geometry and innovative circuit-like plasmonic architectures, envisioning orders of magnitude improvement in photodetector performances

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Yeo, Hwee Tiong. "High responsivity tunable step quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2004. http://library.nps.navy.mil/uhtbin/hyperion/04Dec%5FYeo.pdf.

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Hickey, Thomas R. "Temperature dependence of dark current in quantum well infrared detectors." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FHickey.pdf.

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Memis, Sema. "Ensemble Monte Carlo Modeling Of Quantum Well Infrared Photodetectors." Phd thesis, METU, 2006. http://etd.lib.metu.edu.tr/upload/2/12607291/index.pdf.

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Quantum well infrared photodetectors (QWIPs) have recently emerged as a potential alternative to the conventional detectors utilizing low bandgap semiconductors for infrared applications. There has been a considerable amount of experimental and theoretical work towards a better understanding of QWIP operation, whereas there is a lack of knowledge on the underlying physics. This work provides a better understanding of QWIP operation and underlying physics through particle simulations using the ensemble Monte Carlo method. The simulator incorporates Gamma, L, and X valleys of conduction band as well as the size quantization in the quantum wells. In the course of this work, the dependence of QWIP performance on different device parameters is investigated for the optimization of the QWIP structure. The simulations on AlGaAs/GaAs QWIPs with the typical Al mole fraction of 0.3 have shown that the L valley of the conduction band plays an important role in the electron capture. A detailed investigation of the important scattering mechanisms indicates that the capture of the electrons through the L valley quantum well (L-QW) affects the device performance significantly when Gamma and L valley separation is small. The characteristics of electron capture have been further investigated by repeating the simulations on QWIPs for quantum well widths of 36 and 44 &Aring . The results suggest that the gain in the shorter well width device is considerably higher, which is attributed to the much longer lifetime of the photoexcited electrons as a result of lower capture probability (pc) in the device. The effects of the L-QW height on the QWIP characteristics have also been studied by artificially increasing this height from 63 to 95 meV in Al0.3Ga0.7As/GaAs QWIPs. The increase in the L valley (L-QW) height resulted in higher pc and lower gain due to high rate of capturing of these electrons when Gamma and L valley separation is small.

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Corbin, Elizabeth Ann. "Infra-red optical properties of SiGe/Si heterostructures." Thesis, University of Newcastle Upon Tyne, 1995. http://hdl.handle.net/10443/810.

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We present full-scale relativistic pseudopotential calculations of the first-order susceptibility in p-type SiGe/Si multiple quantum well structures with a view to exploring the suitability of such systems for infrared applications in the 3-5yrn and 8-15itm ranges. A derivation of an expression for the linear susceptibility, or absorption, is given and the frequency dependence of the linear response due to transitions between the valence minibands is determined. The microscopic origin of the absorption is demonstrated for both parallel and normal incident light. Comparisons between calculated and experimental results are presented and shown to be in good agreement. The effects of changing well width, temperature, doping concentration and germanium concentration in the well are considered. We also consider Auger recombination and discuss the possibility of engineering the miniband structure in order to prevent certain Auger processes occuring, Preliminary results from full scale Auger calculations are also presented.

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Wong, Alan Lip Yau. "Study of Inâ‚â†-â†xâ†-â†yGaâ†xAlâ†yAs multiple quantum well infrared photodetectors grown on GaAs substrates." Thesis, University of Hull, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.273817.

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Venter, Johan H. "Dynamic range and sensitivity improvement of infrared detectors using BiCMOS technology." Diss., University of Pretoria, 2013. http://hdl.handle.net/2263/25267.

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The field of infrared (IR) detector technology has shown vast improvements in terms of speed and performance over the years. Specifically the dynamic range (DR) and sensitivity of detectors showed significant improvements. The most commonly used technique of implementing these IR detectors is the use of charge-coupled devices (CCD). Recent developments show that the newly investigated bipolar complementary metal-oxide semiconductor (BiCMOS) devices in the field of detector technology are capable of producing similar quality detectors at a fraction of the cost. Prototyping is usually performed on low-cost silicon wafers. The band gap energy of silicon is 1.17 eV, which is too large for an electron to be released when radiation is received in the IR band. This means that silicon is not a viable material for detection in the IR band. Germanium exhibits a band gap energy of 0.66 eV, which makes it a better material for IR detection. This research is aimed at improving DR and sensitivity in IR detectors. CCD technology has shown that it exhibits good DR and sensitivity in the IR band. CMOS technology exhibits a reduction in prototyping cost which, together with electronic design automation software, makes this an avenue for IR detector prototyping. The focus of this research is firstly on understanding the theory behind the functionality and performance of IR detectors. Secondly, associated with this, is determining whether the performance of IR detectors can be improved by using silicon germanium (SiGe) BiCMOS technology instead of the CCD technology most commonly used. The Simulation Program with Integrated Circuit Emphasis (SPICE) was used to realise the IR detector in software. Four detectors were designed and prototyped using the 0.35 µm SiGe BiCMOS technology from ams AG as part of the experimental verification of the formulated hypothesis. Two different pixel structures were used in the four detectors, which is the silicon-only p-i-n diodes commonly found in literature and diode-connected SiGe heterojunction bipolar transistors (HBTs). These two categories can be subdivided into two more categories, which are the single-pixel-single-amplifier detectors and the multiple-pixel-single-amplifier detector. These were needed to assess the noise performance of different topologies. Noise influences both the DR and sensitivity of the detector. The results show a unique shift of the detecting band typically seen for silicon detectors to the IR band, accomplished by using the doping feature of HBTs using germanium. The shift in detecting band is from a peak of 250 nm to 665 nm. The detector still accumulates radiation in the visible band, but a significant portion of the near-IR band is also detected. This can be attributed to the reduced band gap energy that silicon with doped germanium exhibits. This, however, is not the optimum structure for IR detection. Future work that can be done based on this work is that the pixel structure can be optimised to move the detecting band even more into the IR region, and not just partially. Dissertation (MEng)--University of Pretoria, 2013. Electrical, Electronic and Computer Engineering unrestricted

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Ariyawansa, Gamini. "Semiconductor Quantum Structures for Ultraviolet-to-Infrared Multi-Band Radiation Detection." Digital Archive @ GSU, 2007. http://digitalarchive.gsu.edu/phy_astr_diss/17.

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In this work, multi-band (multi-color) detector structures considering different semiconductor device concepts and architectures are presented. Results on detectors operating in ultraviolet-to-infrared regions (UV-to-IR) are discussed. Multi-band detectors are based on quantum dot (QD) structures; which include quantum-dots-in-a-well (DWELL), tunneling quantum dot infrared photodetectors (T-QDIPs), and bi-layer quantum dot infrared photodetectors (Bi-QDIPs); and homo-/heterojunction interfacial workfunction internal photoemission (HIWIP/HEIWIP) structures. QD-based detectors show multi-color characteristics in mid- and far-infrared (MIR/FIR) regions, where as HIWIP/HEIWIP detectors show responses in UV or near-infrared (NIR) regions, and MIR-to-FIR regions. In DWELL structures, InAs QDs are placed in an InGaAs/GaAs quantum well (QW) to introduce photon induced electronic transitions from energy states in the QD to that in QW, leading to multi-color response peaks. One of the DWELL detectors shows response peaks at ∼ 6.25, ∼ 10.5 and ∼ 23.3 µm. In T-QDIP structures, photoexcited carriers are selectively collected from InGaAs QDs through resonant tunneling, while the dark current is blocked using AlGaAs/InGaAsAlGaAs/ blocking barriers placed in the structure. A two-color T-QDIP with photoresponse peaks at 6 and 17 µm operating at room temperature and a 6 THz detector operating at 150 K are presented. Bi-QDIPs consist of two layers of InAs QDs with different QD sizes. The detector exhibits three distinct peaks at 5.6, 8.0, and 23.0 µm. A typical HIWIP/HEIWIP detector structure consists of a single (or series of) doped emitter(s) and undoped barrier(s), which are placed between two highly doped contact layers. The dual-band response arises from interband transitions of carriers in the undoped barrier and intraband transitions in the doped emitter. Two HIWIP detectors, p-GaAs/GaAs and p-Si/Si, showing interband responses with wavelength thresholds at 0.82 and 1.05 µm, and intraband responses with zero response thresholds at 70 and 32 µm, respectively, are presented. HEIWIP detectors based on n-GaN/AlGaN show an interband response in the UV region and intraband response in the 2-14 µm region. A GaN/AlGaN detector structure consisting of three electrical contacts for separate UV and IR active regions is proposed for simultaneous measurements of the two components of the photocurrent generated by UV and IR radiation.

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Hoang, Vu Dinh. "Charge transport study of InGaAs two-color QWIPs." Thesis, Monterey California. Naval Postgraduate School, 2004. http://hdl.handle.net/10945/1574.

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Approved for public release, distribution is unlimited In this thesis, a series of experiments were performed to characterize the material properties of InGaAs/GaAs for use in a two-color quantum-well IR photodetector (QWIP) design. Results from room temperature studies using cathodoluminescence and photoluminescence indicated light emission at 858 nm and 1019 nm from GaAs and InGaAs, respectively. Using a direct transport imaging technique, an edge dislocation pattern was observed and shown to be confined to the InGaAs layer of the material. A dislocation density measurement was performed and was shown to be less than 2000 lines/cm. Quantitative intensity level measurements indicated fluctuation in the region of dislocations to be less than 30% of the signal to background level. Finally, a spot mode study using the direct transport imaging method was performed to evaluate the feasibility of using this technique for contact-less diffusion length measurements. Civilian, Department of Air Force

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Ozer, Selcuk. "Insb And Inassb Infrared Photodiodes On Alternative Substrates And Inp/ingaas Quantum Well Infrared Photodetectors: Pixel And Focal Plane Array Performance." Phd thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/3/12606097/index.pdf.

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InAsxSb1-x (Indium Arsenide Antimonide) is an important low bandgap semiconductor whose high quality growth on GaAs or Si substrates is indispensible for low cost, large format infrared focal plane arrays (FPAs). Quantum well infrared photodetector (QWIP) technology, relying on mature semiconductors, is also promising for the above purpose. While AlGaAs/GaAs has been the standard material system for QWIPs, the search for alternative materials is needed for better performance. This thesis reports a detailed investigation of molecular beam epitaxy grown mid-wavelength infrared InAsxSb1-x photodiodes on alternative substrates, and long wavelength infrared InP/InGaAs QWIPs. In the first part of the study, InSb and InAs0.8Sb0.2 photodiodes grown on Si and GaAs substrates are investigated to reveal the performance degrading mechanisms due to large lattice mismatch. InAs0.8Sb0.2/GaAs photodiodes yield peak detectivities of 1.4&times 1010 and 7.5&times 108 cmHz&frac12 /W at 77 K and 240 K, respectively, showing that the alloy is promising for both cooled and near room temperature detectors. Under moderate reverse bias, 80 K RoA product limiting mechanism is trap assisted tunneling, which introduces considerable 1/f noise. InSb/Si photodiodes display peak 77 K detectivity as high as ~1&times 1010 cmHz 1/2/W and reasonably high peak quantum efficiency in spite of large lattice mismatch. RoA product of detectors at 80 K is limited by Ohmic leakage with small activation energy (25 meV). Bias and temperature dependence of 1/f noise is in reasonable agreement with Kleinpenning&rsquo s mobility fluctuation model, confirming the validity of this approach. The second part of the study concentrates on InP/In0.53Ga0.47As QWIPs, and 640&times 512 FPA, which to our knowledge, is the largest format InP/InGaAs QWIP FPA reported. InP/InGaAs QWIPs yield quantum efficiency-gain product as high as 0.46 under moderate bias. At 70 K, detector performance is background limited with f/2 aperture up to ~3 V bias where peak responsivity (2.9 A/W) is thirty times higher than that of the Al0.275Ga0.725As/GaAs QWIP with similar spectral response. Impact ionization in InP/InGaAs QWIPs does not start until the average electric-field reaches 25 kV/cm, maintaining high detectivity under moderate bias. The 640&times 512 InP/InGaAs QWIP FPA yields noise equivalent temperature difference of ~40 mK at an FPA temperature as high as 77 K and reasonably low NETD even with short integration times (t). 70 K NETD values of the FPA with f/1.5 optics are 36 and 64 mK under &ndash 0.5 V (t=11 ms) and &ndash 2 V (t=650 Rs) bias, respectively. The results clearly show the potential of InP/InGaAs QWIPs for thermal imaging applications requiring short integration times. Keywords: Cooled infrared detectors, InAsSb, QWIP, focal plane array.

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Kolahdouz, Esfahani Mohammadreza. "Application of SiGe(C) in high performance MOSFETs and infrared detectors." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-32049.

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Epitaxially grown SiGe(C) materials have a great importance for many device applications. In these applications, (strained or relaxed) SiGe(C) layers are grown either selectively on the active areas, or on the entire wafer. Epitaxy is a sensitive step in the device processing and choosing an appropriate thermal budget is crucial to avoid the dopant out–diffusion and strain relaxation. Strain is important for bandgap engineering in (SiGe/Si) heterostructures, and to increase the mobility of the carriers. An example for the latter application is implementing SiGe as the biaxially strained channel layer or in recessed source/drain (S/D) of pMOSFETs. For this case, SiGe is grown selectively in recessed S/D regions where the Si channel region experiences uniaxial strain.The main focus of this Ph.D. thesis is on developing the first empirical model for selective epitaxial growth of SiGe using SiH2Cl2, GeH4 and HCl precursors in a reduced pressure chemical vapor deposition (RPCVD) reactor. The model describes the growth kinetics and considers the contribution of each gas precursor in the gas–phase and surface reactions. In this way, the growth rate and Ge content of the SiGe layers grown on the patterned substrates can be calculated. The gas flow and temperature distribution were simulated in the CVD reactor and the results were exerted as input parameters for the diffusion of gas molecules through gas boundaries. Fick‟s law and the Langmuir isotherm theory (in non–equilibrium case) have been applied to estimate the real flow of impinging molecules. For a patterned substrate, the interactions between the chips were calculated using an established interaction theory. Overall, a good agreement between this model and the experimental data has been presented. This work provides, for the first time, a guideline for chip manufacturers who are implementing SiGe layers in the devices.The other focus of this thesis is to implement SiGe layers or dots as a thermistor material to detect infrared radiation. The result provides a fundamental understanding of noise sources and thermal response of SiGe/Si multilayer structures. Temperature coefficient of resistance (TCR) and noise voltage have been measured for different detector prototypes in terms of pixel size and multilayer designs. The performance of such structures was studied and optimized as a function of quantum well and Si barrier thickness (or dot size), number of periods in the SiGe/Si stack, Ge content and contact resistance. Both electrical and thermal responses of such detectors were sensitive to the quality of the epitaxial layers which was evaluated by the interfacial roughness and strain amount. The strain in SiGe material was carefully controlled in the meta–stable region by implementingivcarbon in multi quantum wells (MQWs) of SiGe(C)/Si(C). A state of the art thermistor material with TCR of 4.5 %/K for 100×100 μm2 pixel area and low noise constant (K1/f) value of 4.4×10-15 is presented. The outstanding performance of these devices is due to Ni silicide contacts, smooth interfaces, and high quality of multi quantum wells (MQWs) containing high Ge content.The novel idea of generating local strain using Ge multi quantum dots structures has also been studied. Ge dots were deposited at different growth temperatures in order to tune the intermixing of Si into Ge. The structures demonstrated a noise constant of 2×10-9 and TCR of 3.44%/K for pixel area of 70×70 μm2. These structures displayed an improvement in the TCR value compared to quantum well structures; however, strain relaxation and unevenness of the multi layer structures caused low signal–to–noise ratio. In this thesis, the physical importance of different design parameters of IR detectors has been quantified by using a statistical analysis. The factorial method has been applied to evaluate design parameters for IR detection improvements. Among design parameters, increasing the Ge content of SiGe quantum wells has the most significant effect on the measured TCR value. QC 20110405

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Jollivet, Arnaud. "Dispositifs infrarouges à cascade quantique à base de semiconducteurs GaN/AlGaN et ZnO/ZnMgO." Thesis, Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLS058/document.

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Ce mémoire de thèse est consacré à l’étude et au développement des hétérostructures semi-conductrices à base de GaN et ZnO. Ces matériaux sont particulièrement prometteurs pour le développement de composants optoélectroniques inter-sous-bandes infrarouges et notamment pour les dispositifs à cascade quantique. Ces semiconducteurs possèdent en effet plusieurs avantages pour la conception de dispositifs à cascade, tels qu’une grande discontinuité de potentiel en bande de conduction et une énergie du phonon LO très élevée. Ces propriétés se traduisent par la possibilité de développer des dispositifs couvrant une gamme spectrale allant du proche-infrarouge au térahertz et offrent la possibilité de réaliser des lasers à cascade quantique térahertz fonctionnant à température ambiante This manuscript focuses on the study and on the development of semiconductor heterostructures based on GaN and ZnO material. These materials are particularly promising for the development of infrared optoelectronic intersubband devices in particular for quantum cascade devices. These semiconductors own several advantages to design quantum cascade devices such as a large conduction band offset and a large energy of the LO phonon. These properties predict the possibility to develop devices covering a large spectral range from near-infrared to terahertz and offer the possibility to realize terahertz quantum cascade lasers operating at room temperature

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Mahajumi, Abu Syed. "InAs/GaSb quantum well structures of Infrared Detector applications. : Quantum well structure." Thesis, IDE, Microelectronics and Photonics, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-3848.

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The detection of MWIR (mid wavelength infrared radiation) is the important for industrial, biomedical and military applications.desirable for the radiation detector to operate in the middle wavelength IR (MWIR) band corresponding to a wavelength band ranging from about 3 microns to about 5 microns.Such MWIR detectors allow forobjects having a similar thermal signature. In addition, MWIR detectors may be used in low power applications such as in night vision for surveillance of personnel.Now a day commercially available uncooled IR sensors operating in MWIR region (2 – 5 μm) use microbolometric detectors which are inherently slow. The novel detector of InAs/GaSb quantum well structures overcomes this limitation. However, third-generation high-performance IR FPAs are already an attractive proposition to the IR system designer. They covered such as multicolour (at least two, and maybe more different spectral bands) with the possibility of simultaneous detection in both space and time, and ever larger sizes of, say, 2000 × 2000, and operating at higher temperatures, even to room temperature, for all cut-off wavelengths.These hetero structures have a type-II band alignment such that the conduction band of InAs layer is lower than the valence band of GaSb layer. The effective bandgap of thesestructures can be adjusted from 0.4 eV to values below 0.1 eV by varying the thickness of constituent layers leading to an enormous range of detector cutoff wavelengths (3-20 This work is focused on the various key characteristics the optical (responsivity and detectivity) and electrical (surface leakage & dark current) of infrared detector and proof of concept is demonstrated on infrared P-I-N photodiodes based on InAs/GaSb superlattices with ~8.5 μm cutoff wavelength and bandgap energy ~150 meV operating at 78 K where supression of surface leakage currents is observed. In certain military applications, it isthermal imaging of airplanes, artillery tanks and otherμm). Nice research work at Halmstad University

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Giannopoulos, Mihail. "Tunable bandwidth quantum well infrared photo detector (TB-QWIP)." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2003. http://library.nps.navy.mil/uhtbin/hyperion-image/03Dec%5FGiannopoulos.pdf.

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Thesis (M.S. in Applied Physics)--Naval Postgraduate School, December 2003. Thesis advisor(s): Gamani Karunasiri, James Luscombe. Includes bibliographical references (p. 59-61). Also available online.

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Alves, Fábio Durante Pereira. "Three-band quantum well infrared photodetector using interband and intersubband transitions." Instituto Tecnológico de Aeronáutica, 2008. http://www.bd.bibl.ita.br/tde_busca/arquivo.php?codArquivo=523.

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This thesis presents the modeling, design, fabrication and characterization of a quantum well infrared photodetector (QWIP) capable of detecting near infrared (NIR), mid wavelength infrared (MWIR) and long wavelength infrared (LWIR), simultaneously. The NIR detection was achieved using interband transition while MWIR and LWIR were based on intersubband transition in the conduction band. The quantum-well structure was modeled by solving self-consistently the Schrödinger and Poisson equations with the help of the shooting method. A sample with three different stacks of quantum wells formed by different configurations of GaAs, AlGaAs and InGaAs, separated by n-doped GaAs contact layers was grown on a semi-insulated GaAs substrate using MBE (Molecular Beam Epitaxy). Intersubband absorption in the sample was measured for the MWIR and LWIR using Fourier transform spectroscopy (FTIR) and the measured peak positions were found at 5.3 and 8.7 ?m, respectively which are within 5% of the theoretical values, indicating the good accuracy of the self-consistent model. The test photodetectors were fabricated using a standard photolithography process with exposed middle contacts to allow separate bias and readout of signals from the three wavelength bands. A 45 degree facet was polished to allow light coupling. Performance analyses were conducted in order to obtain the I-V characteristics, responsivity and detectivity of each detection band. The background-limited infrared performance (BLIP) for the LWIR quantum wells shows an upper operating temperature of about 70 K, limiting the overall device. Photocurrent spectroscopy was performed and gave three peaks at 0.84, 5.0 and 8.5 m wavelengths with approximately 0.5, 0.03 and 0.13 A/W peak responsivities for NIR, MWIR and LWIR bands, respectively. Estimated peak detectivities, limited by the number of quantum well repetitions, are 140, 1.6 and 1.2x109 cm.Hz1/2/W for NIR, MWIR and LWIR, respectively. The overall results demonstrate the possibility of detection of widely separated wavelength bands, in a single pixel device, using interband and intersubband transitions in quantum wells.

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Hansson, Conny, and Rachavula Krishna Kishore. "Comparative study of infrared photodetectors based on quantum wells (QWIPs) and quantum dots (QDIPs)." Thesis, Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE), 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-234.

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This master’s thesis deals with studies of lateral and vertical carrier transport Dot-in- a-Well (DWELL) Quantum Dot Infrared Photodetectors (QDIPs). During the pro ject, devices have been developed and tested using a Fourier Transform Infrared (FTIR) spec- trometer with the purpose to find the processes governing the flow of photocurrent in the different kinds of detectors, the dark current magnitude in the vertical Quantum Dot Infrared Photodetector (QDIP) and the Quantum Well Infrared Photodetector (QWIP) and the light polarization dependences for the vertical QDIP and the QWIP. The lateral carrier transport DWELL QDIP was found to have poor conduction in the well mainly due to re-trapping of electrons in this region. The main process gov- erning the flow of photocurrent for this type of device at 77K is photo-excitation from the Quantum Dot (QD)s to the excited state in the Quantum Well (QW) and further thermal excitation. If the electrons are mainly transported in the matrix or the well at 77K is presently not clear. For the vertical carrier transport DWELL QDIP at 77K, the wavelength response could be tuned by altering the applied voltage. At higher voltages, the dominant process was found to be photo-excitation from the QDs to the excited state in the QW followed by thermal assisted tunneling into the GaAs-matrix. At lower voltages, photo-excitation from the QDs directly into the the GaAs-matrix was the predominant process. The dark current level in the vertical QDIPs was found to be 1.5 to 5 orders of magnitude smaller than for the QWIP measured at 77K. Furthermore, the QDIP was found to be close to polarization independent. As expected the QWIP had a reduced sensitivity to normal incident light. The existence of this signal was attributed to interface scattering of light inside the device.

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Thompson, Michael Dermot. "GaInSb quantum wells grown on metamorphic buffer layers for mid-infrared lasers." Thesis, Lancaster University, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.747981.

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This work studies the use of Ga0.12-0.i6In0.88-0.84Sb quantum wells grown by molecular beam epitaxy (MBE) on a highly mismatched substrate for use in light emitting diodes (LEDs) and lasers emitting in the 3-4 /μm spectral range. Quantum well samples were grown at Lancaster which had abrupt interfaces and showed room temperature photoluminescence (PL) emission between 3.6 and 4.0 /μm. Transmission electron microscope (TEM) imaging revealed a very high defect density of more than 10[10]10 cm-2 in the buffer layer and due to this, Shockley-Read-Hall (SRH) recombination was found to dominate the temperature quenching of the PL emission. Despite the structural problems with the material, the PL quenching performance compared well with other materials designed for this spectral range. Modelling of the quantum wells found that a conduction band offset ratio of 80% gave the best agreement with the experimentally determined transition energies. LEDs fabricated at Lancaster emitted in pulsed mode up to room temperature at 3.6 μm and with an efficiency of 34%. At room temperature SRH recombination was found to dominate the total recombination up to 350 mA drive current and this was also reflected in the temperature quenching of the LED output. From the fitting of the temperature dependence of the LED efficiency the SRH recombination centres were calculated to be 30-50 meV from the centre of the band gap. Fitting the room temperature LED emission spectra revealed that the emission comprised of transitions involving the first two heavy hole states as well as holes in the valence band of the barrier. The emission spectra from the edge of the LED mesa contained amplified spontaneous emission modes which were attributed to radial modes formed due to current crowding under the LED top contact. Lasers fabricated by QinetiQ were examined and from the gain spectra the internal loss was found to be -94 cm- 1 . This was attributed to the high defect density in the structure. The devices emitted at 3.2 /μm at 130 K and from polarisation measurements it was found that the emission was completely polarised in the TE mode corresponding to emission from the heavy hole band. The lasers tested failed to reach operating temperatures above 130 K due to a sharp increase in the threshold current. An analysis of the temperature dependence of the threshold current provided evidence for hole current leakage as the cause of the increase in threshold current between 80 and 130 K.

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Gerbracht, Michael [Verfasser]. "Optically detected resonances induced by far infrared radiation in quantum wells and quantum dots / Michael Gerbracht." München : GRIN Verlag, 2008. http://d-nb.info/997515562/34.

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Dongyeon, Kang. "Mid-Wavelength Infrared Thermal Emitters using GaN/AIGaN Quantum Wells and Photonic Crystals." Kyoto University, 2018. http://hdl.handle.net/2433/232483.

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Adibi, Ali. "Design of infrared emitters and detectors based on quasibound states in semiconductor quantum structures." Diss., Georgia Institute of Technology, 1994. http://hdl.handle.net/1853/14913.

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Armaroli, Giovanni. "Experimental investigation and modelling of mid-infrared quantum cascade detectors operating at high temperature." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2019. http://amslaurea.unibo.it/19293/.

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The present thesis work concerns quantum cascade detectors (QCDs) for the mid-infrared spectral region. These devices are based on a multi-quantum well structure, where the infrared light detection occurs due to photo-stimulated electronic transitions between confined electronic states. In particular, the object of this thesis is an 8.6 µm QCD in a “patch antenna” architecture, where the active region of the device is embedded in a double-metal cavity. This geometry generates an antenna effect, increasing the photon collection area and thus improving the detector's responsivity and noise performance, especially at high temperatures. On such device, we first performed electrical measurements to assess its transport properties in absence of illumination. We extracted the activation energy from dark current measurements at different temperatures and validated our results by means of a simulation of the electronic wavefunctions in the active region. Then, we characterized the photo-detection response and its behavior as a function of temperature, comparing it to a QCD in a standard “mesa” architecture. We measured a ten-fold enhancement in the responsivity with respect to the mesa in the high temperature regime. Moreover, we observed that, thanks to the antenna effect of the double-metal cavities, the patch-antenna QCD displays good detectivity at high temperatures, easily accessible with a thermoelectric cooler. In the last part of this work, we focused on the design and simulation of a new patch-antenna QCD, operating at 4.4 µm. The higher transition energy with respect to the 8.6 µm device introduced challenges in its design and growth processes. To overcome them, we proposed a new QCD design, named “step-well”, where quantum wells of different heights are present in the structure. In this manuscript we describe how we were able to simulate such a system and we report the results of the simulations, along with the final QCD structure we designed.

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SOUZA, MARCIO SCARPIM DE. "DEVELOPMENT OF FAR-INFRARED PHOTODETECTORS BASED ON INTRABAND TRANSITIONS IN GAAS/ALGAAS MULTI-QUANTUM WELLS." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 2006. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=8714@1.

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FINANCIADORA DE ESTUDOS E PROJETOS Nas Forças Armadas do Brasil existe uma forte demanda pelo desenvolvimento de detectores de infravermelho nacionais para uso em diversas aplicações sujeitas a rígidas restrições de importação, como sistemas de imageamento infravermelho para visão noturna, guiamento de mísseis, sistemas de mira, etc. O objetivo deste trabalho foi desenvolver fotodetectores para o infravermelho distante em 10µm, baseados em estruturas semicondutoras de poços quânticos múltiplos de GaAs/AlGaAs utilizando transições intrabanda. Os materiais foram crescidos pela técnica de epitaxia de fase vapor de metalorgânicos (MOVPE). A calibração dos parâmetros de crescimento foi realizada por meio de medidas de difração de raios x, efeito Hall, e fotoluminescência. Devido à regra de seleção de que não é possível haver absorção intrabanda da luz sob incidência normal, foram aplicadas duas técnicas de acoplamento: geometria de guia de onda com incidência a 45º pela borda, e utilização de grades de difração metalizadas. Os detectores produzidos foram caracterizados quanto à corrente de escuro e quanto aos espectros de absorção óptica e de fotocorrente, ambos obtidos por espectroscopia FTIR. Ao final dos trabalhos, foi obtido um fotodetector de GaAs/AlGaAs do qual foi possível medir a fotocorrente através dos contatos elétricos do dispositivo, com pico em 9µm. Os resultados obtidos são promissores no sentido de que apontam para a possibilidade de se produzir detectores de infravermelho nacionais para diversas aplicações (defesa, medicina, astronomia, telecomunicações, etc). In the Brazilian Army there is a strong demand for the development of national infrared detectors for use in many applications subjected to severe trade restrictions, like infrared imaging systems for night vision, missile guidance, sight systems, etc. The aim of this work was to develop far- infrared photodetectors for 10µm, based on semiconductor structures of GaAs/AlGaAs multi-quantum wells using intraband transitions. The materials were grown by metalorganic vapor phase epitaxy (MOVPE). The calibration of the growing parameters was done by x ray diffraction, Hall effect, and photoluminescence measurements. Since intraband transition of light is not possible to normal incidence, due to selection rules, two coupling techniques were applied: waveguide geometry with 45o incidence on the edge, and metalized diffraction gratings. The produced detectors were characterized in terms of dark current, optical absorption and spectral response. Infrared measurements were made using FTIR spectroscopy. A GaAs/AlGaAs photodetector was obtained. The photocurrent through the electrical contacts of the device showed a peak at 9µm. The results are promising in the sense of revealing the possibility of producing national infrared photodetectors for many applications (defense, medicine, astronomy, telecommunications, etc).

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Serapiglia, Gerard Brendan. "High intensity mid infra-red spectroscopy of intersubband transitions in semiconductor quantum wells." Thesis, Imperial College London, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.313400.

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KAWABATA, RUDY MASSAMI SAKAMOTO. "PRODUCTION AND CHARACTERIZATION OF INFRARED PHOTODETECTORS BASED ON QUANTUM WELLS WITH TWO DISTINCT GEOMETRIES FOR LIGHT COUPLING." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 2011. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=35038@1.

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PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO COORDENAÇÃO DE APERFEIÇOAMENTO DO PESSOAL DE ENSINO SUPERIOR PROGRAMA DE EXCELENCIA ACADEMICA Detectores de infravermelho possuem larga gama de aplicações em diversos setores, desde militares (visão noturna, mísseis) até civis (aparelhos eletrônicos). Nesta dissertação estivemos interessados nas absorções intrabanda de heteroestruturas multiepitaxiais com intuito de absorver infravermelho em 4,1 micra onde se localiza a primeira janela de transmissão atmosférica. Baseamos nossas heteroestruturas de poços quânticos em semicondutores da família III-V. Discorremos quanto a produção do dispositivo de forma detalhada, juntamente com todos os processos de calibração de cada etapa. O crescimento se dá pela técnica de MOVPE que possui alta precisão em termos da espessura e composição da camada depositada. Em seguida discutimos sobre o processamento da amostra crescida para expor os contatos elétricos. E finalizamos descrevendo o processo de integração do dispositivo sobre um suporte para leitura do sinal. Finalizada a etapa de produção, fizemos um estudo quanto às características da amostra tanto qualitativamente quanto quantitativamente. Este estudo objetivou a obtenção de duas informações: comparação direta entre as geometrias de acoplamento luminoso; e medição da eficiência dos detectores produzidos. Ao fim do trabalho obtivemos um fotodetector produzido desde seu crescimento até sua montagem final. Assim como os resultados da eficiência dos mesmos que já indicaram melhorias possíveis para trabalhos futuros. Visando a formação de um mercado de produção em larga escala de fotodetectores, este trabalho identificou áreas com carência de técnicas disponíveis e que necessitam de investimento. Infrared detectors have a wide range of applications in various industries, from military (night vision, missile) to civil (electronics). In this dissertation we were interested in the intraband absorption of multiepitaxial heterostructures with aim at absorption of 4.1 microns infrared where there s located the first atmospheric transmission window. We based our quantum well heterostructures in semiconductor from the III-V family. We discourse about the production of the device in detail, along with all the calibration procedures for each step. The growth is done by MOVPE technique that has high accuracy in terms of thickness and composition of the deposited layer. We then discuss about the processing of the grown sample to expose the electrical contacts. And finally we describe the process of integration of the device over a base for reading the signal. Completed the production stage, we studied the characteristics of the sample both qualitatively and quantitatively. This study aimed to obtain two pieces of information: a direct comparison between the methods for light coupling, and measuring the efficiency of the detectors produced. At the end of the work we obtained a photodetector produced from its growth till its final assembly. Also we obtained the results of the efficiency of the sample that already indicated possible improvements for future works. If the aim is at the formation of a large-scale production of photodetectors, this study identified areas with a shortage of available techniques and in need of investment.

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Eickemeyer, Felix. "Ultrafast dynamics of coherent intersubband polarizations in quantum wells and quantum cascade laser structures." Doctoral thesis, [S.l.] : [s.n.], 2002. http://dochost.rz.hu-berlin.de/dissertationen/eickemeyer-felix-2002-07-03.

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34

Piyankarage, Viraj Vishwakantha Jayaweera. "Uncooled Infrared Photon Detection Concepts and Devices." Digital Archive @ GSU, 2009. http://digitalarchive.gsu.edu/phy_astr_diss/30.

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This work describes infrared (IR) photon detector techniques based on novel semiconductor device concepts and detector designs. The aim of the investigation was to examine alternative IR detection concepts with a view to resolve some of the issues of existing IR detectors such as operating temperature and response range. Systems were fabricated to demonstrate the following IR detection concepts and determine detector parameters: (i) Near-infrared (NIR) detection based on dye-sensitization of nanostructured semiconductors, (ii) Displacement currents in semiconductor quantum dots (QDs) embedded dielectric media, (iii) Split-off band transitions in GaAs/AlGaAs heterojunction interfacial workfunction internal photoemission (HEIWIP) detectors. A far-infrared detector based on GaSb homojunction interfacial workfunction internal photoemission (HIWIP) structure is also discussed. Device concepts, detector structures, and experimental results discussed in the text are summarized below. Dye-sensitized (DS) detector structures consisting of n-TiO2/Dye/p-CuSCN heterostructures with several IR-sensitive dyes showed response peaks at 808, 812, 858, 866, 876, and 1056 nm at room temperature. The peak specific detectivity (D*) was 9.5E+10 Jones at 812 nm at room temperature. Radiation induced carrier generation alters the electronic polarizability of QDs provided the quenching of excitation is suppressed by separation of the QDs. A device constructed to illustrate this concept by embedding PbS QDs in paraffin wax showed a peak D* of 3E+8 Jones at ~540 nm at ambient temperature. A typical HEIWIP/HIWIP detector structures consist of single (or multiple) period(s) of doped emitter(s) and undoped barrier(s) which are sandwiched between two highly doped contact layers. A p-GaAs/AlGaAs HEIWIP structure showed enhanced absorption in NIR range due to heavy/light-hole band to split-off band transitions and leading to the development of GaAs based uncooled sensors for IR detection in the 2 5 μm wavelength range with a peak D* of 6.8E+5 Jones. A HIWIP detector based on p-GaSb/GaSb showed a free carrier response threshold wavelength at 97 µm (~3 THz)with a peak D* of 5.7E+11 Jones at 36 μm and 4.9 K. In this detector, a bolometric type response in the 97 - 200 µm (3-1.5 THz) range was also observed.

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Wheatley, Robert Alistair. "Growth and characterisation of strained InGaAsN and InAsN type 1 multi quantum wells for mid infrared light sources based on InP." Thesis, Lancaster University, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.742533.

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In this work, novel quantum well structures were grown by molecular beam epitaxy (MBE). Samples have been designed in order to allow access to light sources from InP based type I interband devices, for the technologically important mid-infrared (Mid-IR) (2-5 um) spectral range. Investigations of dilute nitride InGaAsN and InAsN were performed with the intent to highlight the potential availability of type-I MQW structures grown onto InP substrates emitting Mid-IR radiation. This thesis describes the successful attempt to overcome restrictions imposed by lattice mismatch and resultant critical thickness limitations as described by past experiments with these materials, where conventional III-V alloy materials are restricted to 2.3pm and dilute nitride materials have been previously reported as emitting up to 2.6pm within this strained MQW regime.

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Young, Christina Rachel. "FT-IR and quantum cascade laser spectroscopy towards a hand-held trace gas sensor for benzene, toluene, and xylenes (BTX)." Diss., Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31702.

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The work described herein focuses on FT-IR and quantum cascade laser (QCL) based studies towards the development of compact and portable trace gas sensor for benzene, toluene, and xylenes (BTX). FT-IR broadband radiation was used to probe the mid-infrared fingerprint region for quantitatively detecting trace gas levels of BTX. Using direct absorption through a hollow waveguide, parts-per-million (ppm) detection limits for BTX with a response time of 39 seconds was demonstrated. Univariate calibration provided limits of detection (3σ) for benzene, toluene, and meta-xylene at 5, 17, and 11 ppm, respectively. Multivariate calibration using partial least squares regression algorithms were used to simulate real-world conditions with multiple analytes present within a complex sample. A calibration model was built with 110 training set standards enabled by using a customized gas mixing system. Furthermore, a preconcentration/thermal desorption (TD) step was added to the FT-IR HWG trace gas sensor enabling parts-per-billion detection of BTX. A univariate calibration was established in the laboratory with certified gas standards over a dynamic range of 1000 - 100 ppb for benzene, toluene, and the xylenes. The sensor was then taken to an industrial site during a field measurement campaign for the quantitative determination of BTX in field air samples. The laboratory calibration was used to predict unknown concentrations which were in close agreement with industrial hygiene standard techniques, and industrial prototype analyzers, that were simultaneously operated in the field environment. In addition to FT-IR, quantum cascade laser spectroscopy was also investigated due to enhanced spectral density and efforts to precisely overlap emission with analyte absorption. Particular efforts were dedicated on a novel principle for consistent and deliberate QCL emission wavelength selection by varying the QCL cavity length. These studies experimentally confirmed that using this straight-forward post-processing technique, emission wavelength tuning across a range of one hundred wavenumbers range may be achieved. This tuning range was experimentally demonstrated for a QCL emitting across an entire absorption feature of carbon dioxide by tailoring the length of the cavity. Additionally, using an external cavity (EC) - QCL combined with a HWG gas sensor module for the first time enabled the quantitative and simultaneous determination of ethyl chloride, trichloromethane, and dichloromethane within exponential dilution experiments at ppb limits of detection. Multianalyte detection was demonstrated utilizing partial least squares regression for quantitative discrimination of individual constituents within a mixture, yet applying a single broadly tunable QCL light source.

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Lim, Caroline Botum. "Hétérostructures GaN/Al(Ga)N pour l'optoélectronique infrarouge : orientations polaires et non-polaires." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAY030/document.

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Les transitions intersousbandes (ISB) sont des transitions d’énergie entre des états électroniques dans un puits quantique. Les nanostructures GaN/AlGaN sont prometteuses pour le développement de composants optoélectroniques ISB pouvant couvrir la totalité de la gamme infrarouge. Leur large décalage de bande de conduction (~1.8 eV pour les systèmes GaN/AlN) et temps de vie ISB inférieurs au picoseconde les rendent attractifs pour l’optronique ultra-rapide en régime infrarouge courte longueur d’onde (SWIR, 1-3 µm) et moyenne longueur d’onde (MWIR, 3-8 µm). De plus, la grande énergie de phonon longitudinal-optique du GaN (92 meV, 13 µm) offre la possibilité de développer des composants ISB couvrant la bande 5-10 THz, interdite au GaAs, et opérant à température ambiante.Le travail décrit dans ce manuscrit a eu pour objectif d'améliorer les performances des technologies ISB GaN/AlGaN et de contribuer à une meilleure compréhension des problématiques posées par leur extension à la gamme des THz. D’une part, la photodétection ISB nécessite le dopage n des nanostructures. Dans ce travail de thèse, on étudie le Si et le Ge en tant que dopants de type n potentiels pour le GaN. D’autre part, la présence de champs électriques internes dans la direction de confinement des hétérostructures plan c constitue l’un des principaux défis de la technologie GaN ISB. C'est pourquoi on étudie la possibilité d’utiliser des orientations cristalline non-polaires a ou m alternatives pour obtenir des systèmes opérant sans l’influence de ces champs électriques.Concernant l'étude du Ge et du Si comme dopants potentiels, on montre que l’incorporation de Ge dans des couches mince de GaN n’affecte pas leur morphologie, mosaïcité ni photoluminescence. Les propriétés bande-à-bande des nanostructures GaN/AlGaN plan c étudiées sont indifférentes à la nature du dopant, mais les structures à grand désaccord de maille voient leur qualité structurale améliorée par le dopage Ge. Concernant l’alternative non-polaire, on compare des structures à multi-puits quantiques GaN/AlN plan a et plan m. Les meilleurs résultats en termes de performances structurales et optiques (bande-à-bande et ISB) sont obtenues pour les structures plan m. Elles montrent de l’absorption ISB à température ambiante couvrant la fenêtre SWIR, avec des performances comparables aux structures plan c, mais avec une qualité structurale trop faible pour envisager la fabrication de composants. En incorporant du Ga dans les barrières d’AlN, on réduit de désaccord de maille et donc la densité de fissures. Ces structures plan m montrent de l’absorption ISB à température ambiante dans la gamme MWIR 4.0-4.8 µm, mais présentent toujours des défauts de structure. Finalement, on a étendu l’étude à la gamme lointain infrarouge, en utilisant des barrières d’AlGaN avec une composition bien plus basse en Al. Les structures plan m étudiées présentent une excellente qualité cristalline, sans défauts de structures, et présentent de l’absorption intersousbande à basse température entre 6.3 et 37.4 meV (1.5 et 9 THz). Ce résultat constitue une démonstration expérimentale de la faisabilité de composants GaN opérant dans la bande 5-10 THz, interdite aux technologies GaAs Intersubband (ISB) transitions are energy transitions between electronic states in a quantum well. GaN/AlGaN nanostructures have emerged as promising materials for new ISB optoelectronics devices, with the potential to cover the whole infrared spectrum. Their large conduction band offset (~1.8 eV for GaN/AlN) and sub-picosecond ISB recovery times make them appealing for ultrafast photonics devices in the short-wavelength infrared (SWIR, 1-3 µm), and mid-wavelength infrared (MWIR, 3-8 µm) regions. Moreover, the large energy of GaN longitudinal-optical phonon (92 meV, 13 µm) opens prospects for room-temperature ISB devices covering the 5-10 THz band, inaccessible to GaAs.The work described in this thesis has aimed at improving the performance and understanding of the material issues involved in the extension of the GaN/AlGaN ISB technology to the THz range. On the one hand, ISB photodetection requires n-type doping of the active nanostructures. In this work, we explore Si and Ge as potential n-type dopants for GaN. On the other hand, the presence of internal electric fields in the confinement direction of polar c-plane heterostructures constitutes one of the main challenges of the GaN-based ISB technology. In this thesis, we address the use of nonpolar a or m crystallographic orientations as an alternative to operate without the influence of these electric fields.Regarding the use of Si and Ge as n-type dopants for GaN, we show that the use of Ge as a dopant does not affect the morphology, mosaicity and photoluminescence properties of the doped GaN thin films. In the c-plane GaN/AlGaN heterostructures, no effect on the band-to-band properties was observed, but the structures with high lattice mismatch showed better mosaicity when doped with Ge. Regarding the alternative of nonpolar GaN, we compared GaN/AlN multi-quantum wells grown on a and m nonpolar free-standing GaN substrates. The best results in terms of structural and optical (both band-to-band and ISB) performance were obtained for m-plane structures. They showed room-temperature ISB absorption covering the whole SWIR spectrum, with optical performance comparable to polar c-plane structures, in spite of a too low structural quality to consider device processing. By introducing Ga in the AlN barriers, the lattice mismatch of the structure is reduced, leading to lower densities of cracks. Such m-plane structures showed room-temperature ISB absorption tunable in the 4.0-5.8 µm MWIR range, but still with structural defects. Finally, we extended the study to the far-infrared range, using AlGaN barriers with much lower Al content. As a result, the studied m-plane structures displayed an excellent crystalline quality, without extended defects, and showed low-temperature ISB absorption in the 6.3 to 37.4 meV (1.5 to 9 THz) range. This result constitutes an experimental demonstration of the feasibility of GaN devices for the 5-10 THz band, forbidden to GaAs-based technologies

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Rinzan, Mohamed Buhary. "Threshold extension of gallium arsenide/aluminum gallium arsenide terahetrz detectors and switching in heterostructures." unrestricted, 2006. http://etd.gsu.edu/theses/available/etd-10102006-204618/.

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Thesis (Ph. D.)--Georgia State University, 2006. Title from title screen. Unil Perera, committee chair; Donald Edwards, Gennady Cymbaluyk, Mark Stockman, Nikolaus Dietz, Paul Wiita, committee members. Electronic text (348, 24-32 p. : ill.) : digital, PDF file. Description based on contents viewed June 8, 2007. Includes bibliographical references (p. 24-30, second sequence).

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Belahsene, Sofiane. "Lasers moyen infrarouge innovants pour analyse des hydrocarbures." Thesis, Montpellier 2, 2011. http://www.theses.fr/2011MON20166/document.

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L'objectif de cette thèse, réalisée dans le cadre du contrat européen Senshy, était la réalisation de diodes laser émettant dans le moyen infrarouge (de 3,0 à 3,4 µm). Ces diodes sont destinées à intégrer des détecteurs et des systèmes d'analyse de gaz basés sur le principe de la spectroscopie d'absorption (TDLAS) pour la détection des alcanes (méthane, éthane, propane) et des alcènes (acétylène). Les structures à puits quantiques de type I ont été réalisées par épitaxie par jets moléculaires sur GaSb.Bien qu'ayant d'excellentes performances dans la gamme 2,0-3,0 µm, les lasers GaInAsSb/AlGaAsSb montrent rapidement leurs limites en franchissant la frontière des 3 µm (la longueur d'onde la plus haute atteinte avec un tel composant est de 3,04 µm en continu à 20°C). Cette situation était d'autant plus regrettable que plusieurs gaz ont leurs raies d'absorption au-delà de 3 µm : le méthane par exemple a un pic d'absorption à 3,26 µm 40 fois plus fort que celui à 2,31 µm. En remplaçant le quaternaire AlGaAsSb par le quinaire AlGaInAsSb, nous avons montré que l'on pouvait améliorer l'efficacité quantique interne et avons obtenu des densités de courant de seuil à 2,6, 3,0 et 3,3 µm qui pouvaient être comparées favorablement aux précédents records à ces longueurs d'onde (respectivement, 142 A/cm², 255 A/cm² et 827 A/cm²).Les diodes laser DFB fabriquées à partir des structures epitaxiées ont permis d'atteindre l'émission laser à température ambiante en continu à 3,06 µm avec un caratère mono-fréquence (SMSR supérieur à 30 dB) et un courant de seuil de 54 mA. À 3,3 µm, les diodes DFB fonctionnent en continu jusqu'à 18°C avec un SMSR > 30dB et un courant de seuil de 140 mA. Finalement, ces diodes ont été intégrées dans un système d'analyse de gaz et ont permis d'atteindre une limite de concentration du méthane de 100 ppbv soit 17 fois moins que la concentration du méthane dans l'air ambiant The objective of this thesis, conducted as part of the European contract Senshy, was the realization of laser diodes emitting in the mid-infrared range (from 3.0 to 3.4 µm). These devices are to be integrated into detectors and gas analysis systems based on the principle of absorption spectroscopy (TDLAS). for the detection of alkanes (methane, ethane, propane) and of alkenes (acetylene). The quantum well type-I structures were made by molecular epitaxy on GaSb. Despite having excellent performance in the 2 to 3 µm range, GaInAsSb/AlGaAsSb quantum well lasers rapidly show their limits when crossing the 3 µm barrier (the highest wavelength reached with such a device was 3.04 µm under cw operation at 20°C). This situation was all the more regrettable because several gases have their strongest absorption lines in the 3 to 4 µm range: methane, for example, has a peak of absorption at 3.26 µm overhanging a weaker peak at 2.31 µm by a factor 40. By replacing the quaternary AlGaAsSb by the quinary AlGaInAsSb, we have shown that the internal efficiency could be improved and we have obtained threshold current densities at 2.6 , 3.0 and 3,3 µm that could be favourably compared to the previous records at these wavelengths (respectively, 142 A/cm², 255 A/cm² and 827 A/cm²).DFB laser diodes made from the epitaxial structures were operated at room temperature in the continuous wave regime at 3.06 µm with a single-frequency emission (SMSR greater than 30dB) and a threshold current of 54 mA. At 3.3 µm, DFB devices were operated in cw up to 18 ° C with a SMSR > 30 dB and a current threshold of 140 mA. Eventually, these devices were integrated into a gas analysis system and allowed to reach a concentration limit of 100 ppbv of methane, i.e. 17 times less than the concentration of methane in the air

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Weerasekara, Aruna Bandara. "Electrical and Optical Characterization of Group III-V Heterostructures with Emphasis on Terahertz Devices." Digital Archive @ GSU, 2007. http://digitalarchive.gsu.edu/phy_astr_diss/16.

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Electrical and optical characterizations of heterostructures and thin ﬁlms based on group III-V compound semiconductors are presented. Optical properties of GaMnN thin ﬁlms grown by Metalorganic Chemical Vapor Deposition (MOCVD) on GaN/Sapphire templates were investigated using IR reﬂection spectroscopy. Experimental reﬂection spectra were ﬁtted using a non - linear ﬁtting algorithm, and the high frequency dielectric constant (ε∞), optical phonon frequencies of E1(TO) and E1(LO), and their oscillator strengths (S) and broadening constants (Γ) were obtained for GaMnN thin ﬁlms with different Mn fraction. The high frequency dielectric constant (ε∞) of InN thin ﬁlms grown by the high pressure chemical vapor deposition (HPCVD) method was also investigated by IR reﬂection spectroscopy and the average was found to vary between 7.0 - 8.6. The mobility of free carriers in InN thin ﬁlms was calculated using the damping constant of the plasma oscillator. The terahertz detection capability of n-type GaAs/AlGaAs Heterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) structures was demonstrated. A threshold frequency of 3.2 THz (93 µm) with a peak responsivity of 6.5 A/W at 7.1 THz was obtained using a 0.7 µm thick 1E18 cm−3 n - type doped GaAs emitter layer and a 1 µm thick undoped Al(0.04)Ga(0.96)As barrier layer. Using n - type doped GaAs emitter layers, the possibility of obtaining small workfunctions (∆) required for terahertz detectors has been successfully demonstrated. In addition, the possibility of using GaN (GaMnN) and InN materials for terahertz detection was investigated and a possible GaN base terahertz detector design is presented. The non - linear behavior of the Inter Pulse Time Intervals (IPTI) of neuron - like electric pulses triggered externally in a GaAs/InGaAs Multi Quantum Well (MQW) structure at low temperature (~10 K) was investigated. It was found that a grouping behavior of IPTIs exists at slow triggering pulse rates. Furthermore, the calculated correlation dimension reveals that the dimensionality of the system is higher than the average dimension found in most of the natural systems. Finally, an investigation of terahertz radiation efect on biological system is reported.

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Costantini, Daniele. "Generation and ampliﬁcation of surface plasmon polaritons at telecom wavelength with compact semiconductor-based devices". Thesis, Paris 11, 2013. http://www.theses.fr/2013PA112036/document.

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La plasmonique est un domaine de la nano-photonique qui étudie le comportement de la lumière à des échelles sub-longueurs d'ondes en présence de métaux. Les plasmons polaritons de surface (SPPs) sont des modes électromagnétiques qui se propagent à l'interface entre un diélectrique et un métal. Les SPPs trouvent des applications dans plusieurs domaines comme la communication et le traitement tout-optique du signal, la spectroscopie, la détection en biologie et en chimie. De nombreux composants plasmoniques (modulateurs, coupleurs, détecteurs ...) ont été démontrés ces dernières années. Cependant, leur l'intégration reste conditionnée par l'absence d'un générateur compact (pompage électrique, dimensions réduites) et par les grandes pertes ohmiques. Les techniques standards de génération de SPs nécessitent l'alignement d'un laser externe sur un prisme ou un réseau de diffraction afin d'adapter le vecteur d'onde incident avec celui du plasmon. L'approche que nous avons choisie est basée sur l'utilisation de lasers à semiconducteur ayant une polarisation transverse magnétique (TM) comme source d'excitation et de gain. Notre approche, permet d'obtenir des dispositifs compacts et facilement intégrables sur puce. Pendant ma thèse j'ai étudié expérimentalement et numériquement les performances d'un laser en fonction rapprochement du contact métallique à sa région active. La proximité du gain optique au métal est nécessaire pour la réalisation de dispositifs plasmoniques actifs. J'ai démontré la génération et l'amplification des plasmons de surface dans la bande télécom (λ=1.3µm), avec des dispositifs compacts, à base de semiconducteurs, fonctionnant par injection électrique et à température ambiante. Notamment, j'ai réalisé une architecture élégante, avec coupleur intégré, pour la génération de SPPs accessibles sur le sommet du dispositif. Un dispositif avec gaine superficielle ultrafine a permis de démontrer un mode hybride plasmonique avec une fraction consistante de champ électrique à l'interface métal/semiconducteur. Finalement, j'ai montrée que la structuration nanométrique du contact métallique réduit les pertes du mode laser. Les résultats sont renforcés par une nouvelle technique de imagerie de champ proche (SNOM) qui a permis de mesurer les SPPs à l'interface métal/or et à l'interface métal/ semiconducteur. Grâce aux mesures SNOM, il a aussi été possible de démontrer sans aucune ambiguïté l'effet de la structuration du métal sur le mode optique The ﬁeld of plasmonics is experiencing a rapid development, due to the interest in studying the behavior of light at the nanometer scale. Key ingredients of plasmonics are the surface plasmons (SPs), electromagnetic modes localized at the interface between a metal and a dielectric. SPs rely on the interaction between electromagnetic radiation and conduction electrons at metallic interfaces or in "small" metallic nanostructures. The recent intense activity on plasmonics has been also enabled by state-of-the-art nano fabrication techniques and by high-sensitivity optical characterization techniques. These tools pave the way to promising applications (integration in electronics, chemical and biological detection...), which exploit the SP peculiarity of conﬁning optical ﬁelds over sub-wavelength mode volumes. The number of publications concerning plasmonics has been continuously increasing over the last twenty years giving rise to a dynamic research context. Several plasmonic devices have been demonstrated during the last years (modulators, couplers, detectors ...). However their integration is limited by the absence of a compact generator (electrical pumping, small dimensions) and by the huge ohmic losses. Standard techniques for surface plasmon polariton (SPP) generation need an external alignment with a laser source on a prism or on a grating. Our approach is based on semiconductor lasers sources with a transverse magnetic (TM) polarization. Therefore, it is possible to obtain compact semiconductor devices suitable for the on chip integration. During my thesis I studied experimentally and numerically the performance of a diode laser as a function of the metal distance from its active region. The proximity of the gain to the metal is necessary to realize active plasmonic devices. I demonstrated the generation and the amplification of SPP in the telecom range (λ=1.3µm) with compact semiconductor based devices, operating at room temperature and by electrical injection. I realized an elegant architecture with an integrated coupler grating for the SPP generation. The SPPs are directly accessible at the device surface. An ultra-thin cladding device allowed the demonstration of a hybrid plasmonic laser with a consistent fraction of electric field at the metal/semiconductor interface. Finally I demonstrated that the metal patterning allows a loss reduction, decreasing the laser threshold. The results are strengthened by a new near-field technique (NSOM) which permitted to measure the SPPs at the metal/air interface and at the metal/semiconductor interface. Thanks to the NSOM we showed unambiguously the effect of the metal patterning on the optical mode

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42

Quiroga, Jean-Manuel. "Étude des propriétés optiques de multicouches a-Si:H/a-SiO2." Grenoble 1, 1998. http://www.theses.fr/1998GRE10124.

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L'etude porte sur les proprietes optiques de puits nanometriques multiples a-si:h/a-sio#2 elabores par pecvd (he+sih#4+o#2). Les caracteristiques des materiaux de reference sont determinees par diverses techniques de spectroscopie optique. Nous montrons la necessite de simuler les spectres en tenant compte des reflexions multiples afin d'eviter des erreurs importantes sur la valeur du coefficient d'absorption. Des mesures in situ de la teneur en oxygene dans le plasma nous ont permis de determiner une procedure de depot des multicouches reduisant la largeur des interfaces. La modulation de la composition chimique dans l'epaisseur est observee par des mesures de met, de rayons x et de spectrometrie infrarouge. La simulation des spectres de transmission infrarouge de la multicouche consideree comme un milieu effectif montre que l'interface a-sio#2/a-si:h est la plus large. La variation de l'epaisseur des motifs pour des series de multicouches de largeur de puits (d#a#-#s#i#:#h) ou de barriere constante permet d'elaborer des profils-modele de la composition d'oxygene en epaisseur x(d) en tenant compte de la reduction de la couche de silice et de l'oxydation de celle du silicium amorphe par le plasma lors du depot des couches ulterieures. Nous presentons enfin les mesures d'absorption et de photoluminescence des multicouches. La reduction de la largeur du puits conduit a une augmentation apparente du gap (e#g) mais une analyse plus fine s'appuyant sur le modele physico-chimique montre que la valeur apparente de e#g ne correspond pas a la separation minimale entre les bandes de valence et de conduction. Une emission de lumiere visible a l'il a temperature ambiante est observee pour des largeurs de puits nominales inferieures a 20a. Contrairement aux predictions du modele de confinement quantique, la position du pic de photoluminescence est independante de d#a#-#s#i#:#h. Nous concluons que la presence de sous-oxydes au fond du puits est a l'origine de l'emission observee.

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43

Mandray, Ariane. "Etude magnéto-optique de centres D- confinés dans des multi-puits quantiques GaAs/AlGaAs." Université Joseph Fourier (Grenoble), 1994. http://www.theses.fr/1994GRE10075.

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Le centre d#-, ou ion donneur negatif, est l'analogue en physique du solide de l'ion hydrogene negatif h#-. Il s'agit donc d'un systeme correle simple, avec seulement deux electrons. Les transitions magneto-optiques permettant l'etude des donneurs peu profonds (neutres ou charges negativement) dans les multi-puits gaas/algaas se situent dans la gamme de l'infra-rouge lointain. Notre appareillage experimental est essentiellement constitue d'un spectrometre a transformee de fourier, couple a un aimant supraconducteur ou resistif. Nous avons etudie le mecanisme de formation des centres d#- confines dans des multi-puits quantiques. Dans cette configuration, contrairement au materiau massif, les centres d#- sont formes par construction, ce qui permet leur etude a l'equilibre thermodynamique. L'importance de la geometrie de dopage est soulignee, et la possibilite de realiser un dopage d#- de puits quantiques est mise en evidence. Le spectre d'energie des centres d#- confines a ete etudie pour une large gamme de champs magnetiques (jusqu'a 20 t) et pour differentes largeurs de puits. Ces mesures permettent d'observer, outre la non-parabolicite de bande de gaas, les effets de correlation electronique augmentes par la baisse de dimensionalite. L'etude des centres d#- en presence de desordre d'alliage dans des puits de al-gaas met en evidence la possibilite de coexistence, dans ce type de systeme, de centres profonds et de centres peu profonds, tous deux charges negativement

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44

HUANG, YI-MIN, and 黃益民. "The design of tunable coupled quantum wells far-infrared detectors." Thesis, 1990. http://ndltd.ncl.edu.tw/handle/41460239391614177704.

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45

Balakrishnam, Raju J. "Design, Fabrication And Characterization Of Corrugated-Quantum Well Infrared Photodetector." Thesis, 2005. http://etd.iisc.ernet.in/handle/2005/1426.

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LAI, Ming-Chih, and 賴銘智. "Optimized Design of The Dual-band Quantum Well Infrared Detectors." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/84822993228291402826.

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碩士 國防大學理工學院 光電工程碩士班 99 In this thesis, vertically stacked structure pixels combined with interlacemode achieves dual-band quantum well infrared detector elements, where it improvesthe shortcomings existing pixels on the process design, mask and components in the production of long-wavelength grating , the mask paste with the components and the gap between high and low when the shortcomings of this study, it improves the shortcomings of hight differences between mid- and long wavelength QWIP structure rusuiting in focusing on optical grating when the interlaced QWIPs are fabriouted. The study uses metal covered with the edge of Mid-wavelength QWIP to achieve the same height of dual-band QWIP, output Dual-band response and decrease device darkcurrent from surface and edge of QWIP. By proposed revised process.We improve the performance of interlanced dual-band QWIP. Where,it results in eages-undercuting and higher darkcurrent in our laboratory last year. Because the normal incident TE mode infrared light can not be adsorbed, the two-dimensioual optical grating must be used to deflect the incident light. The research is proposed a better parameters of two-dimensioual optical grating to apply the interlaced dual-band QWIPs. Using Comsol Multi-physics 3.5a simulator (fimite element method) combined with Schrodinger wave-equation, band-gap engineering in strained effect to optimize the period numbers, Al and In mole ratio of quantum well, QWIP stracture will be proposed efficiently and quickly.

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Deng, Shao You, and 鄧紹猷. "The Fabrication and Measurement of Muti-Quantum Well Infrared Detectors." Thesis, 1993. http://ndltd.ncl.edu.tw/handle/44678454987787191253.

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En-Chih, Liu, and 劉恩池. "Investigations for the Dual-band Quantum Well Infrared Detectors Optimized under Process Condition." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/47779841567459400940.

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碩士 國防大學理工學院 電子工程碩士班 100 The dissertation is to realize dual-band quantum well infrared detector elements by using stair structure to stack and interlace with pixels, further to improve the mid-wave structure of metalshort circuit during the interlace mode device process of current pixels. Due to the serious undercut, it has caused metal shutdown and could not to produce the long-wave photo response. The research is proposed to expose more metal short circuit mid - wave by stacking the stair structure, therefore successfully produces dual-band mid and long wave photo responses and increase photo responses and decrease dark current of devices. The research has improved and modified the previous dual band manufacturing process - the previous process had a low yield rate of lithography because it used different pictures during dual-band mid and long wave grating manufacturing process, which had led to a incomplete grating structure, therefore resulted in the degradation of dual band quantum well infrared detector . Because quantum well infrared detector elements can not absorb coupling positively reflecting Transverse Electric light, it is necessary to produce two-dimensioual optical grating on the devices. The research has obtained better two-dimension optical grating parameters and has successfully applied in the interlaced dual-band quantum well infrared detector elements.

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Zhang, Guo-Xiong, and 張國雄. "GaAs/AlGaSa molecular beam epitaxy and its application to multiple quantum well infrared detectors." Thesis, 1992. http://ndltd.ncl.edu.tw/handle/55499673454992754377.

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Lin, lian jium, and 李廉鈞. "Experiment emphasizes on the optimized design of the dual-band quantum well infrared detectors." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/55381961465161507164.

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碩士 國防大學理工學院 電子工程碩士班 98 This experiment emphasizes on the optimized design of the dual-band quantum well infrared detectors.At first,required to achieve the better performance of to the single-band quantum well infrared detectors, based on optical and electrical properties analyzed optimization research to facilitate more effective coupling incident light from two-dimensional grating, as well as adjusting the position of potential energy wells, and carrier doping densities to improve the background of long-wavelength limit temperature, and other aspects. For single-band quantum well, the design dual-band quantum well after optimazing and the scheme of and process mask, the better design of wavelength absorption in the 4.7 μm and 8.4 μm, with the ranks of the exchange of detector is proposed. With the synchronous output is achieved under the middle and long-wavelength of and dual-band quantum well infrared detector, operating at 60 K, and a bias of -3.2 V.The dual-band response of the middle responsivity are 0.27 A/W and long wavelength responsivity are 0.39 A/ W.

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