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Journal articles on the topic 'Quantum wells. Infrared detectors'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 February 2022

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1

PERERA, A. G. U., and S. G. MATSIK. "QUANTUM STRUCTURES FOR FAR-INFRARED DETECTION." International Journal of High Speed Electronics and Systems 12, no. 03 (September 2002): 821–72. http://dx.doi.org/10.1142/s012915640200171x.

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FIR photon detector development starting from the extrinsic detectors for LWIR to FIR wavelengths are presented. Several other types of IR detectors, including the cut-off wavelength extension into the FIR range for quantum well infrared photodetectors (QWIPs), are summarized. Efforts in developing p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors and the most reason developments on GaAs/AlGaAs Heterojunction interfacial workfunction internal photoemission (HEIWIP) far-infrared detectors are presented.

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2

Graf, Marcel, Emmanuel Dupont, Hui Luo, Soufien Haffouz, Zbig R. Wasilewski, Anthony J. Spring Thorpe, Dayan Ban, and H. C. Liu. "Terahertz quantum well infrared detectors." Infrared Physics & Technology 52, no. 6 (November 2009): 289–93. http://dx.doi.org/10.1016/j.infrared.2009.05.034.

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3

Rutt, Harvey. "Semiconductor quantum wells and superlattices for long-wavelength infrared detectors." Optics & Laser Technology 26, no. 1 (January 1994): 74. http://dx.doi.org/10.1016/0030-3992(94)90031-0.

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4

ROGALSKI, A. "QUANTUM WELL INFRARED PHOTOCONDUCTORS IN INFRARED DETECTORS TECHNOLOGY." International Journal of High Speed Electronics and Systems 12, no. 03 (September 2002): 593–658. http://dx.doi.org/10.1142/s0129156402001654.

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Investigations of the performance of quantum well infrared photodetectors (QWIPs) as compared to other types of semiconductor infrared (IR) detectors are presented. In comparative studies both photon and thermal detectors are considered. More attention is paid to photon detectors and between them we can distinguish: HgCdTe photodiodes, InSb photodiodes, Schottky barrier photoemissive detectors, and doped silicon detectors. Special attention has been paid to competitive technologies in long wavelength IR (LWIR) and very LWIR (VLWIR) spectral ranges with emphasis on the material properties, device structure, and their impact on FPA performance. The potential performance of different materials as infrared detectors is examined utilizing the α/G ratio, where α is the absorption coefficient and G is the thermal generation. From the discussion results, LWIR QWIP cannot compete with HgCdTe photodiode as the single device especially at higher temperature operation(> 70 K) due to fundamental limitations associated with intersubband transitions. However, the advantage of HgCdTe is less distinct in the temperature range below 50 K due to problems involved in the HgCdTe material (p-type doping, Shockley–Read recombination, trap-assisted tunneling, surface and interface instabilities). Even though the QWIP is a photoconductor, several its properties such as high impedance, fast response time, long integration time, and low power consumption, well comply with requirements for large FPAs fabrication. Due to the high material quality at low temperature, QWIP has potential advantages over HgCdTe for VLWIR FPA applications in terms of the array size, uniformity, yield and cost of the systems. Both HgCdTe photodiodes and quantum well infrared photodetectors offer multicolor capability in the MWIR and LWIR range. Powerful possibilities of QWIP technology are connected with VLWIR FPA applications and with multicolor detection. QWIP FPAs combine the advantages of PtSi Schottky barrier arrays (high uniformity, high yield, radiation hardness, large arrays, lower cost) with the advantages of HgCdTe (high quantum efficiency and long wavelength response).

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5

Benaadad, Merieme, Abdelhakim Nafidi, Samir Melkoud, Driss Barkissy, and Nassima Benchtaber. "Quantum magneto transport properties of nanostructure multi quantum wells short wave Infrared detectors." Journal of Physics: Conference Series 1743 (January 2021): 012009. http://dx.doi.org/10.1088/1742-6596/1743/1/012009.

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6

Ben Salem, E., R. Chaabani, and S. Jaziri. "Mid/far-infrared photo-detectors based on graphene asymmetric quantum wells." Chinese Physics B 25, no. 9 (August 30, 2016): 098101. http://dx.doi.org/10.1088/1674-1056/25/9/098101.

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7

ZAŁUŻNY, M., and W. ZIETKOWSKI. "ELECTRODYNAMIC RESPONSE OF MULTIPLE QUANTUM WELLS: THE INTERSUBBAND RESONANCE REGION." International Journal of High Speed Electronics and Systems 12, no. 03 (September 2002): 907–24. http://dx.doi.org/10.1142/s0129156402001745.

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The electrodynamic properties of multiple quantum wells (MQWs) associated with intersubband transitions are discussed in context of infrared detectors. The effective medium approach is used for modeling of MQW structures. The usefulness of the concept of the radiative intersubband plasmon-polaritons in the description of the complex behavior of grazing-angle absorption spectra is also demonstrated.

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8

Jollivet, A., B. Hinkov, S. Pirotta, H. Hoang, S. Derelle, J. Jaeck, M. Tchernycheva, et al. "Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells." Applied Physics Letters 113, no. 25 (December 17, 2018): 251104. http://dx.doi.org/10.1063/1.5058120.

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9

Hagston, W. E., T. Stirner, and F. Rasul. "Quantum theory of infrared detectors based on intrasubband transitions in III–V quantum wells." Journal of Applied Physics 89, no. 2 (January 15, 2001): 1087–100. http://dx.doi.org/10.1063/1.1333032.

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10

Hainey, Mel F., Takaaki Mano, Takeshi Kasaya, Tetsuyuki Ochiai, Hirotaka Osato, Kazuhiro Watanabe, Yoshimasa Sugimoto, et al. "Systematic studies for improving device performance of quantum well infrared stripe photodetectors." Nanophotonics 9, no. 10 (July 4, 2020): 3373–84. http://dx.doi.org/10.1515/nanoph-2020-0095.

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AbstractThe integration of quantum well infrared photodetectors with plasmonic cavities has allowed for demonstration of sensitive photodetectors in the mid-infrared up to room-temperature operating conditions. However, clear guidelines for optimizing device structure for these detectors have not been developed. Using simple stripe cavity detectors as a model system, we clarify the fundamental factors that improve photodetector performance. By etching semiconductor material between the stripes, the cavity resonance wavelength was expected to blue-shift, and the electric field was predicted to strongly increase, resulting in higher responsivity than unetched stripe detectors. Contrary to our predictions, etched stripe detectors showed lower responsivities, indicating surface effects at the sidewalls and reduced absorption. Nevertheless, etching led to higher detectivity due to significantly reduced detector dark current. These results suggest that etched structures are the superior photodetector design, and that appropriate sidewall surface treatments could further improve device performance. Finally, through polarization and incidence angle dependence measurements of the stripe detectors, we clarify how the design of previously demonstrated wired patch antennas led to improved device performance. These results are widely applicable for cavity designs over a broad range of wavelengths within the infrared, and can serve as a roadmap for improving next-generation infrared photodetectors.

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11

Huang, Danhong, and M. O. Manasreh. "Intersubband transitions in triple‐coupled quantum wells for three‐colors infrared detectors." Journal of Applied Physics 80, no. 10 (November 15, 1996): 6045–49. http://dx.doi.org/10.1063/1.363561.

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12

Chusnutdinow, S., M. Szot, T. Wojtowicz, and G. Karczewski. "PbSe/CdTe single quantum well infrared detectors." AIP Advances 7, no. 3 (March 2017): 035111. http://dx.doi.org/10.1063/1.4978527.

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13

KOLODZEY, J., T. N. ADAM, R. T. TROEGER, P. C. LV, S. K. RAY, I. YASSIEVICH, M. ODNOBLYUDOV, and M. KAGAN. "TERAHERTZ EMITTERS AND DETECTORS BASED ON SiGe NANOSTRUCTURES." International Journal of Nanoscience 03, no. 01n02 (February 2004): 171–76. http://dx.doi.org/10.1142/s0219581x0400195x.

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Terahertz (THz) electroluminescence was produced by three different types of sources: intersubband transitions in silicon germanium quantum wells, resonant state transitions in boron-doped strained silicon germanium layers, and hydrogenic transitions from dopant atoms in silicon. The devices were grown by molecular beam epitaxy, fabricated by dry etching, and characterized by infrared spectroscopy. The absorption of THz was observed in silicon germanium quantum wells at energies corresponding to heavy hole and light hole intersubband transitions. These results suggest that SiGe nanotechnology is attractive for THz device applications.

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14

Steele, A. G., H. C. Liu, M. Buchanan, and Z. R. Wasilewski. "Influence of the number of wells in the performance of multiple quantum well intersubband infrared detectors." Journal of Applied Physics 72, no. 3 (August 1992): 1062–64. http://dx.doi.org/10.1063/1.351833.

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15

KONG, LING-MIN, JIAN ZHANG, XING-KUI CHENG, CUN-XI ZHANG, and RUI WANG. "INVESTIGATION OF THE BANDWIDTH OF GaAs/AlGaAs QUANTUM WELL INFRARED PHOTODETECTOR." Modern Physics Letters B 23, no. 27 (October 30, 2009): 3265–72. http://dx.doi.org/10.1142/s0217984909021284.

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A GaAs / AlGaAs multi-quantum well (MQW) structure has been grown by solid source molecular beam epitaxy (MBE) and fabricated to detectors. A spectral response curve of the detector with full width at half maximum (FWHM) = 3.78 μm and peak wavelength = 9.73 μm has been obtained at a bias of E = 3 × 103 Vcm -1 at T = 77 K. We study the bandwidth of the GaAs / AlGaAs quantum well infrared photodetector (QWIP) by using effective mass approximation. It is found that the transmissivity of the electron through the potential barrier reaches its maximum value (T = 1) on the condition of resonance transmission in a multi-quantum well structure, if the energy state is defined as a conduction state when the transmissivity of electron through the potential barrier on which is bigger than 1/2, then, a series of separated conduction microbands were formed above the barriers which consist of conduction states. Under the influence of an external electric field, the conduction microbands stagger periodically among the quantum wells to form a Wannier–Stark ladder. When optical excitation occurs, electrons not only vertically transit from Fermi level EF in a quantum well to conduction microbands above the well, but also obliquely transit to the conduction microbands above the neighboring well, and the formed photocurrent peaks overlap together; consequently, the bandwidth of the photoresponsive spectrum is improved. The calculated bandwidth of the photocurrent spectrum agrees well with the measured one in our experiment.

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16

Tan, Chee Leong, and Hooman Mohseni. "Emerging technologies for high performance infrared detectors." Nanophotonics 7, no. 1 (January 1, 2018): 169–97. http://dx.doi.org/10.1515/nanoph-2017-0061.

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AbstractInfrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III–V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional low-dimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced light-matter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

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17

Andersson, J. Y., and L. Lundqvist. "Grating‐coupled quantum‐well infrared detectors: Theory and performance." Journal of Applied Physics 71, no. 7 (April 1992): 3600–3610. http://dx.doi.org/10.1063/1.350916.

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18

Liu, H. C. "Photoconductive gain mechanism of quantum‐well intersubband infrared detectors." Applied Physics Letters 60, no. 12 (March 23, 1992): 1507–9. http://dx.doi.org/10.1063/1.107286.

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19

Mermelstein, C., H. Schneider, A. Sa’ar, C. Schönbein, M. Walther, and G. Bihlmann. "Low-power photocurrent nonlinearity in quantum well infrared detectors." Applied Physics Letters 71, no. 14 (October 6, 1997): 2011–13. http://dx.doi.org/10.1063/1.119771.

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20

Fu, Y., M. Willander, and Wenlan Xu. "Optical absorption coefficients of semiconductor quantum‐well infrared detectors." Journal of Applied Physics 77, no. 9 (May 1995): 4648–54. http://dx.doi.org/10.1063/1.359432.

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21

Chu, Zeshi, Yuwei Zhou, Jing Zhou, PingPing Chen, Zhifeng Li, Wei Lu, and Xiaoshuang Chen. "Quantum well infrared detectors enhanced by faceted plasmonic cavities." Infrared Physics & Technology 116 (August 2021): 103746. http://dx.doi.org/10.1016/j.infrared.2021.103746.

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22

H. Mohammed, Hassan, and Salwan K. J. AL-Ani. "The Fabrication of the Infrared CdSe Doped With Cu Photodetector." Applied Physics Research 8, no. 3 (May 7, 2016): 96. http://dx.doi.org/10.5539/apr.v8n3p96.

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In this work, the implementation method of the CdSe doped with Cu (CdSe: Cu) photodetector is presented. This detector is prepared by vacuum evaporation of CdSe films on glass substrate followed by vacuum annealing under an argon atmosphere for doping with copper. This detector is found, for the first time, to cover a wide range of the infrared besides the visible region of the electromagnetic spectrum. This finding of the wavelength tuning is due to the localized energy states of copper atoms inside the band gap of the CdSe. This tuning is compared with recent work in the corresponding colloidal CdSe-ZnS core shell quantum dots and with the quantum well (QWIR) and quantum dots (QDIR) infrared detectors. The major significance of this developed detector is in its synthesis simplicity and its fabrication processes costs in comparison with that of the (QWIR) and (QDIR) detectors. The structural analysis results demonstrated that the vacuum annealing in competition with the doping concentration improves significantly the film structure. Better crystalline structure was reported at 5 wt% of Cu concentration and at annealing temperature of 350 ºC. Besides the measured detectivity at room temperature is D*=2.31×108 cm Hz1/2W-1. This value approaches the detectivity of the state of art mercury cadmium telluride (MCT). This result paves the way for further investigations and improvements.

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23

Liu, H. C., M. Buchanan, and Z. R. Wasilewski. "Short wavelength (1–4 μm) infrared detectors using intersubband transitions in GaAs-based quantum wells." Journal of Applied Physics 83, no. 11 (June 1998): 6178–81. http://dx.doi.org/10.1063/1.367488.

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24

BROWN, G. J., F. SZMULOWICZ, K. MAHALINGAM, A. SAXLER, R. LINVILLE, S. ELHAMRI, CHIH-HSIANG LIN, C. H. KUO, and W. Y. HWANG. "SUPERLATTICE MATERIALS FOR THE NEXT GENERATION OF LONG WAVELENGTH INFRARED DETECTORS." International Journal of High Speed Electronics and Systems 10, no. 01 (March 2000): 47–53. http://dx.doi.org/10.1142/s0129156400000088.

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New infrared (IR) detector materials with high sensitivity, multi-spectral capability, improved uniformity and lower manufacturing costs are required for numerous space-based infrared imaging applications. To meet these stringent requirements, new materials must be designed and grown using semiconductor heterostructures, such as quantum wells and superlattices, to tailor new optical and electrical properties unavailable in the current generation of materials. One of the most promising materials is a strained layer supperlattice (SLS) composed of thin InAs and GaInSb layers. While this material shows theoretical and early experimental promise, there are still several materials growth and processing issues to be addressed before this material can be transitioned to the next generation of infrared detector arrays. Our research is focused on addressing the basic materials design, growth, optical properties, and electronic transport issue of these superlattices.

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25

Jacobs, E. S. "77 K far-infrared hot-electron multi-quantum-well detectors." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16, no. 3 (May 1998): 1430. http://dx.doi.org/10.1116/1.589960.

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26

Nedelcu, Alexandru, Xavier Marcadet, Odile Huet, and Philippe Bois. "Spectral cross-talk in dual-band quantum well infrared detectors." Applied Physics Letters 88, no. 19 (May 8, 2006): 191113. http://dx.doi.org/10.1063/1.2203207.

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27

Choe, J. ‐W, Byungsung O, K. M. S. V. Bandara, and D. D. Coon. "Exchange interaction effects in quantum well infrared detectors and absorbers." Applied Physics Letters 56, no. 17 (April 23, 1990): 1679–81. http://dx.doi.org/10.1063/1.103115.

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28

Lundqvist, L., J. Y. Andersson, Z. F. Paska, J. Borglind, and D. Haga. "Efficiency of grating coupled AlGaAs/GaAs quantum well infrared detectors." Applied Physics Letters 63, no. 24 (December 13, 1993): 3361–63. http://dx.doi.org/10.1063/1.110145.

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29

Fiore, A., E. Rosencher, P. Bois, J. Nagle, and N. Laurent. "Strained InGaAs/AlGaAs quantum well infrared detectors at 4.5 μm." Applied Physics Letters 64, no. 4 (January 24, 1994): 478–80. http://dx.doi.org/10.1063/1.111135.

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30

Brandel, A., A. Fraenkel, E. Finkman, G. Bahir, G. Livescu, and M. T. Asom. "Responsivity and thermionic current in asymmetric quantum well infrared detectors." Semiconductor Science and Technology 8, no. 1S (January 1, 1993): S412—S416. http://dx.doi.org/10.1088/0268-1242/8/1s/091.

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31

Shadrin, V. D., and F. L. Serzhenko. "The theory of multiple quantum-well GaAs-AlGaAs infrared detectors." Infrared Physics 33, no. 5 (September 1992): 345–57. http://dx.doi.org/10.1016/0020-0891(92)90032-o.

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32

Park, J. S., R. P. G. Karunasiri, and K. L. Wang. "Normal incidence infrared detector usingp‐type SiGe/Si multiple quantum wells." Applied Physics Letters 60, no. 1 (January 6, 1992): 103–5. http://dx.doi.org/10.1063/1.107361.

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33

Li, Liang, and Dayuan Xiong. "Photoresponse of Long-Wavelength AlGaAs/GaAs Quantum Cascade Detectors." Advances in Condensed Matter Physics 2015 (2015): 1–5. http://dx.doi.org/10.1155/2015/306912.

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We study the photoresponse and photocurrents of long-wavelength infrared quantum cascade detectors (QCDs) based on AlGaAs/GaAs material system. The photocurrent spectra were measured at different temperatures from 20 K to 100 K with a low noise Fourier transforming infrared spectrometer. The main response peak appeared at 8.9 μm while four additional response peaks from 4.5 μm to 10.1 μm were observed as well. We confirmed that the photocurrent comes from phonon assisted tunneling and the multipeak behavior comes from the complicated optical transition in the quantum cascade structure. This work is valuable for the future design and optimization of QCD devices.

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34

Wu, Wen-Gang, De-Sheng Jiang, Li-Qui Cui, Chun-Ying Song, and Yan Zhuang. "Structural and photoelectric studies on double barrier quantum well infrared detectors." Solid-State Electronics 43, no. 4 (April 1999): 723–27. http://dx.doi.org/10.1016/s0038-1101(98)00315-3.

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35

Karunasiri, Gamani. "Thermionic emission and tunneling in InGaAs/GaAs quantum well infrared detectors." Journal of Applied Physics 79, no. 10 (May 15, 1996): 8121–23. http://dx.doi.org/10.1063/1.362372.

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36

Williams, G. M., R. E. DeWames, C. W. Farley, and R. J. Anderson. "Excess tunnel currents in AlGaAs/GaAs multiple quantum well infrared detectors." Applied Physics Letters 60, no. 11 (March 16, 1992): 1324–26. http://dx.doi.org/10.1063/1.107331.

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37

Chi, Gou-Chung, and Cheng Juang. "GaAs/AlGaAs Quantum Well Infrared Detectors with an Integral Silicon Grating." Japanese Journal of Applied Physics 33, Part 1, No. 5A (May 15, 1994): 2483–86. http://dx.doi.org/10.1143/jjap.33.2483.

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38

Schneider, H., E. C. Larkins, J. D. Ralston, K. Schwarz, F. Fuchs, and P. Koidl. "Space‐charge effects in photovoltaic double barrier quantum well infrared detectors." Applied Physics Letters 63, no. 6 (August 9, 1993): 782–84. http://dx.doi.org/10.1063/1.109906.

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39

Steele, A. G., M. Buchanan, H. C. Liu, and Z. R. Wasilewski. "Postgrowth tuning of quantum‐well infrared detectors by rapid thermal annealing." Journal of Applied Physics 75, no. 12 (June 15, 1994): 8234–36. http://dx.doi.org/10.1063/1.356532.

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40

Perera, A. G. U., V. G. Silvestrov, S. G. Matsik, H. C. Liu, M. Buchanan, Z. R. Wasilewski, and M. Ershov. "Nonuniform vertical charge transport and relaxation in quantum well infrared detectors." Journal of Applied Physics 83, no. 2 (January 15, 1998): 991–97. http://dx.doi.org/10.1063/1.366787.

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41

Dupont, E., M. Byloos, T. Oogarah, M. Buchanan, and H. C. Liu. "Optimization of quantum-well infrared detectors integrated with light-emitting diodes." Infrared Physics & Technology 47, no. 1-2 (October 2005): 132–43. http://dx.doi.org/10.1016/j.infrared.2005.02.018.

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42

Liu, H. C., D. D. Coon, O. Byungsung, Y. F. Lin, and M. H. Francombe. "Intersubband transition in quantum wells and triple-barrier diode infrared detector concepts." Superlattices and Microstructures 4, no. 3 (January 1988): 343–49. http://dx.doi.org/10.1016/0749-6036(88)90180-2.

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43

BARVE, A. V., Y. D. SHARMA, J. MONTOYA, J. SHAO, T. VANDERVELDE, T. ROTTER, and S. KRISHNA. "ENGINEERING THE BARRIER OF QUANTUM DOTS-IN-A-WELL (DWELL) INFRARED PHOTODETECTORS FOR HIGH TEMPERATURE OPERATION." International Journal of High Speed Electronics and Systems 20, no. 03 (September 2011): 549–55. http://dx.doi.org/10.1142/s0129156411006842.

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Reduction in the dark current and improvement in signal to noise ratio in the quantum dots in a well infrared photodetectors using resonant tunneling barriers have been demonstrated. Ultra-low dark current levels and high detectivity of 3×1010 cm.Hz1/2/W at 77K for f/2 optics has been obtained for longwave infrared detection. In another experiment, the ability to control the excited state in the DWELL has been demonstrated by systematically varying the quantum well thickness. These detectors demonstrate high operating temperature with high detectivity values, even for high operating temperatures.

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44

Huang, Danhong, and M. O. Manasreh. "Exchange interaction effect on the dark current in n-type AlxGa1−xAs/GaAs multiple quantum wells infrared detectors." Journal of Applied Physics 81, no. 3 (February 1997): 1305–10. http://dx.doi.org/10.1063/1.363910.

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45

Fraenkel, A., A. Brandel, G. Bahir, E. Finkman, G. Livescu, and M. T. Asom. "Bias dependence of responsivity and transport in asymmetric quantum well infrared detectors." Applied Physics Letters 61, no. 11 (September 14, 1992): 1341–43. http://dx.doi.org/10.1063/1.107585.

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46

Schneider, H. "Optimized performance of quantum well intersubband infrared detectors: Photovoltaic versus photoconductive operation." Journal of Applied Physics 74, no. 7 (October 1993): 4789–91. http://dx.doi.org/10.1063/1.354352.

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47

Shenoi, Rajeev V., Jessie Rosenberg, Thomas E. Vandervelde, Oskar J. Painter, and Sanjay Krishna. "Multispectral Quantum Dots-in-a-Well Infrared Detectors Using Plasmon Assisted Cavities." IEEE Journal of Quantum Electronics 46, no. 7 (July 2010): 1051–57. http://dx.doi.org/10.1109/jqe.2010.2042682.

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48

Nathan, Vaidya. "Comment on “Quantum-well infrared detectors” [J. Appl. Phys.74, R18 (1993)]." Journal of Applied Physics 81, no. 10 (May 15, 1997): 7076. http://dx.doi.org/10.1063/1.365271.

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49

Beck, W. A. "Photoconductive gain and generation‐recombination noise in multiple‐quantum‐well infrared detectors." Applied Physics Letters 63, no. 26 (December 27, 1993): 3589–91. http://dx.doi.org/10.1063/1.110105.

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50

Zhang, Y., N. Baruch, and W. I. Wang. "AlAs/AlGaAsX‐valley quantum‐well normal‐incidence infrared detectors on Si substrates." Journal of Applied Physics 75, no. 7 (April 1994): 3690–91. http://dx.doi.org/10.1063/1.356088.

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