Academic literature on the topic 'Radio frequency. Metal oxide semiconductor field-effect transistors. Wireless communication systems'

In Radio Frequency (RF) communication, a Power Amplifier (PA) is used to amplify the signal at the required power level with less utilization of Direct Current (DC) power. The main characteristic of class-E PA is sturdy nonlinearity due to the switching mode action. In this study, a modified design of class-E PA with balanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and high output power for Electronic Article Surveillance (EAS) Radio Frequency Identification (RFID) application is presented. MOSFETs are adjusted to have high output performance of about 80% for RFID-based EAS system. A matching network is also proposed for accurate matching because there are differences in the behavior between RF waves and low frequency waves. The design of a matching network is a tradeoff among the complexity, adjustability, implementation, and bandwidth for the required output power and frequency. The implemented PA is capable of providing 44.8 dBm output power with Power-Added Efficiency (PAE) of 78.5% at 7.7 MHz to 8.7 MHz.

Software-defined radio (SDR) is a good solution for complying with the existing and incoming protocols for emerging wireless sensor networks (WSN) and internet of things (IoT) applications. The frequency synthesizer in a SDR tranceiver usually consists of a phase locked loop (PLL) and a post synthesizer. The PLL is the narrow band signal source and the post synthesizer generates wideband outputs by mixing and dividing. Compared with a frequency synthesizer utilizing the wideband PLL, this synthesizer features relatively constant loop parameters and mitigates the requirement for the oscillator. In this paper, a quadrature single side-band (QSSB) mixer with the proposed passive negative resistance (PNR) for frequency mixing in a post synthesizer is presented. The PNR is achieved by biasing the Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) of the cross-coupled pair at the deep-triode region periodically and incorporates an inductor and a cap-array as the mixer load. Compared with the traditional single side-band mixers utilizing Inductor-Capacitor (LC) resonant loads or quality factor enhanced (Q-enhanced) LC resonant loads, which suffer from a selectivity versus working range trade-off, the mixer employing the proposed loading structure provides not only a wide operating range, but also a superior image side-band rejection ratio (ISRR). Moreover, the oscillating risk in conventional mixers adopting Q-enhanced LC resonant loads is eliminated. A wideband frequency synthesizer employing the proposed mixer was implemented in a TSMC 0.18 µm CMOS process and the mixer performed ISRR of 40–57 dB and 30–57 dB across 2.5–3 GHz and 2.3–3.2 GHz, respectively. The power consumption of the QSSB mixer, including buffer, is 18 mA from a 1.8 V supply and the active area is 0.445 mm2. The measurement results provide validation that the proposed QSSB mixer is suitable for wideband software-defined frequency synthesizers and other frequency generating systems.

Kwok Pui-ho.<br>Thesis (M.Phil.)--Chinese University of Hong Kong, 2000.<br>Includes bibliographical references (leaves [79]-85).<br>Abstracts in English and Chinese.<br>Chapter CHAPTER 1 --- INTRODUCTION --- p.1<br>Chapter CHAPTER 2 --- NONLINEAR BEHAVIOR OF RF POWER AMPLIFIERS --- p.5<br>Chapter 2.1 --- Single Tone Excitation --- p.6<br>Chapter 2.1.1 --- AM-AM Conversion --- p.7<br>Chapter 2.1.2 --- AM-PM Conversion --- p.9<br>Chapter 2.2 --- Two-Tone Excitation --- p.11<br>Chapter 2.2.1 --- Intermodulation Distortion --- p.12<br>Chapter 2.3 --- Digitally Modulated Signal Excitation --- p.13<br>Chapter 2.3.1 --- Spectral Regeneration --- p.14<br>Chapter 2.3.2 --- Adjacent Channel Power Ratio (ACPR) --- p.16<br>Chapter CHAPTER 3 --- LINEARIZATION TECHNIQUES --- p.18<br>Chapter 3.1 --- pre-distortion --- p.20<br>Chapter 3.2 --- Feed-forward Techniques --- p.23<br>Chapter 3.3 --- Harmonics Control Techniques --- p.24<br>Chapter CHAPTER 4 --- SPECTRAL REGROWTH ANALYSIS USING VOLTERRA SERIES METHOD --- p.26<br>Chapter 4.1 --- Introduction To Volterra Series Analysis --- p.27<br>Chapter 4.1.1 --- Linear and Nonlinear Systems --- p.27<br>Chapter 4.1.2 --- Evaluation of Volterra transfer function --- p.29<br>Chapter 4.1.3 --- Volterra Series Analysis of Spectral Regrowth --- p.31<br>Chapter 4.2 --- Nonlinear Model of GaAs MESFET Device --- p.33<br>Chapter 4.3 --- Evaluation Of Nonlinear Responses --- p.35<br>Chapter 4.3.1 --- First-Order Response --- p.36<br>Chapter 4.3.2 --- Second-Order Response --- p.38<br>Chapter 4.3.3 --- Third-Order Response --- p.39<br>Chapter CHAPTER 5 --- EFFECT OF HARMONIC TUNING ON SPECTRAL REGROWTH --- p.42<br>Chapter 5.1 --- Simulation of Digitally Modulated Signal --- p.43<br>Chapter 5.2 --- Effect of Source Second Harmonic Termination --- p.44<br>Chapter CHAPTER 6 --- EXPERIMENTAL VERIFICATION --- p.48<br>Chapter 6.1 --- Circuit Design and Construction --- p.49<br>Chapter 6.2 --- Setup and Measurement --- p.55<br>Chapter 6.3 --- Experimental Results --- p.56<br>Chapter 6.3.1 --- Small Signal Measurement --- p.56<br>Chapter 6.3.2 --- Single Tone Characterization --- p.57<br>Chapter 6.3.3 --- Two-Tone Characterization --- p.59<br>Chapter 6.3.4 --- ACPR Characterization --- p.60<br>Chapter 6.4 --- Comparison of Measurement and Simulation --- p.66<br>Chapter CHAPTER 7 --- NONLINEAR TRANSCONDUCTANCE COEFFICIENTS EXTRACTION --- p.68<br>Chapter 7.1 --- Large Signal Model --- p.69<br>Chapter 7.2 --- Extraction of Nonlinear Transconductance --- p.71<br>Chapter 7.2.1 --- Extraction of g1 --- p.71<br>Chapter 7.2.2 --- Extraction of g2 and g3 --- p.72<br>Chapter CHAPTER 8 --- CONCLUSION --- p.76<br>FUTURE WORK RECOMMENDATION --- p.78<br>REFERENCE