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Journal articles on the topic 'Reactions in the solid state'

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Published: 4 June 2021
Last updated: 13 February 2022

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1

TOKUNO, Kenji, and Tsutomu OHASHI. "Organic Solid-State Reactions : Solid-State Gabriel Reactions." YAKUGAKU ZASSHI 111, no. 7 (1991): 359–64. http://dx.doi.org/10.1248/yakushi1947.111.7_359.

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2

Schmalzried, H. "Solid State Reactions." Solid State Phenomena 56 (August 1997): 13–36. http://dx.doi.org/10.4028/www.scientific.net/ssp.56.13.

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3

TOKUNO, K., and T. OHASHI. "ChemInform Abstract: Organic Solid-State Reactions: Solid-State Gabriel Reactions." ChemInform 23, no. 20 (August 22, 2010): no. http://dx.doi.org/10.1002/chin.199220127.

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4

Schmalzried, Hermann, and Monika Backhaus-Ricoult. "Internal solid state reactions." Progress in Solid State Chemistry 22, no. 1 (January 1993): 1–57. http://dx.doi.org/10.1016/0079-6786(93)90007-e.

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5

Cohen, M. D. "Solid-state photochemical reactions." Tetrahedron 43, no. 7 (January 1987): 1211–24. http://dx.doi.org/10.1016/s0040-4020(01)90244-3.

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6

Toda, Fumio. "Solid State Organic Reactions." Synlett 1993, no. 05 (1993): 303–12. http://dx.doi.org/10.1055/s-1993-22441.

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7

Schmalzried, H. "Internal Solid State Reactions." physica status solidi (b) 172, no. 1 (July 1, 1992): 87–97. http://dx.doi.org/10.1002/pssb.2221720110.

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8

Kaftory, Menahem. "Solid-state chemical reactions." Acta Crystallographica Section A Foundations of Crystallography 65, a1 (August 16, 2009): s8. http://dx.doi.org/10.1107/s0108767309099851.

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9

Seifert, H. J. "Retarded solid state reactions." Journal of Thermal Analysis 35, no. 6 (June 1989): 1879–90. http://dx.doi.org/10.1007/bf01911674.

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10

Toda, Fumio. "Selective Reactions in the Solid State and Organic Solid-Solid Reactions." Molecular Crystals and Liquid Crystals Incorporating Nonlinear Optics 187, no. 1 (August 1990): 41–48. http://dx.doi.org/10.1080/00268949008036025.

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11

Schmalzried, Hermann. "Chemical kinetics at solid-solid interfaces." Pure and Applied Chemistry 72, no. 11 (January 1, 2000): 2137–47. http://dx.doi.org/10.1351/pac200072112137.

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The kinetics of solid-solid interfaces controls in part the course of heterogeneous reactions in the solid state, in particular in miniaturized systems. In this paper, the essential situations of interface kinetics in solids are defined, and the basic formal considerations are summarized. In addition to the role interfaces play as resistances for transport across them, they offer high diffusivity paths laterally and thus represent two-dimensional reaction media. Experimental examples will illustrate the kinetic phenomena at static and moving boundaries, including problems such as exchange fluxes, boundary-controlled solid-state reactions, interface morphology, nonlinear phenomena connected with interfaces, and reactions in and at boundaries, among others.
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12

Luo, Shi Yong, Wen Cai Xu, Zun Zhong Liu, and Jia Yun Zhang. "A Computation Software on Diffusion and Solid State Reactions Kinetics." Advanced Materials Research 148-149 (October 2010): 316–21. http://dx.doi.org/10.4028/www.scientific.net/amr.148-149.316.

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A computer software on solid/solid reaction kinetics, KinPreSSR, is one of subsystems in the software, Intellectualized Database Management System on Kinetics of Metallurgy (IDMSKM). KinPreSSR is a Windows application developed using Visual C++ and FoxPro, and includes two main modules, “DIFFUSION” and “REACTION”. KinPreSSR deals with the kinetics on the diffusion in solid state as well as solid/solid reactions. In the ‘REACTION’ module, the system has organized the commonly recognized kinetic models, parameters and employed both numerical and graphical methods for data analyses. The proper combination between the kinetic contents and the analytical methods enables users to use KinPreSSR for the evaluation and prediction of solid/solid reactions interested. The ‘DIFFUSION’ module includes two sub-modules of “database management system (DBMS)” and "Evaluation & prediction". The “DBMS” deals with the diffusion coefficients gathered from reported documents and the data evaluated according to some rules, besides, it can provide users with retrieval of diffusion coefficients. Based on the solutions to the Fick’s first law and the Fick’s second law in the four typical critical conditions, the "Evaluation & prediction" sub-module gives the predication of concentration distribution after diffusion process in solids or computation for diffusion coefficient.
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13

Flanagan, T. B., C. N. Park, and W. A. Oates. "Hysteresis in solid state reactions." Progress in Solid State Chemistry 23, no. 4 (January 1995): 291–363. http://dx.doi.org/10.1016/0079-6786(95)00006-g.

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14

Martin, M., P. Tigelmann, S. Schimschal-Thölke, and G. Schulz. "Solid state reactions and morphology." Solid State Ionics 75 (January 1995): 219–28. http://dx.doi.org/10.1016/0167-2738(94)00170-w.

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15

Kaftory, Menahem. "Reactions in the solid state." Tetrahedron 43, no. 7 (January 1987): 1503–11. http://dx.doi.org/10.1016/s0040-4020(01)90266-2.

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16

Carter, C. B. "Interfaces in Solid-State Reactions." Berichte der Bunsengesellschaft für physikalische Chemie 90, no. 8 (August 1986): 643–49. http://dx.doi.org/10.1002/bbpc.19860900805.

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17

Markovski, S. L., M. J. H. Dal, M. J. L. Verbeek, A. A. Kodentsov, and F. J. J. Loo. "Microstructology of solid-state reactions." Journal of Phase Equilibria 20, no. 4 (July 1999): 373–88. http://dx.doi.org/10.1361/105497199770340905.

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18

Schiffers, S. "Solid-state reactions with photocrystallography." Acta Crystallographica Section A Foundations of Crystallography 64, a1 (August 23, 2008): C615. http://dx.doi.org/10.1107/s0108767308080227.

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19

Szabó, Z. G. "Microdynamics of solid-state reactions." Thermochimica Acta 110 (February 1987): 325–32. http://dx.doi.org/10.1016/0040-6031(87)88241-2.

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20

Farrer, Jeffrey K., and C. Barry Carter. "Texture in solid-state reactions." Journal of Materials Science 41, no. 16 (July 29, 2006): 5169–84. http://dx.doi.org/10.1007/s10853-006-0428-6.

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21

Chou, T. C., and T. G. Nieh. "Solid state reactions between Ni3Al and SiC." Journal of Materials Research 5, no. 9 (September 1990): 1985–94. http://dx.doi.org/10.1557/jmr.1990.1985.

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Solid state reactions between SiC and Ni3Al were studied at 1000°C for different times. Multi-reaction-layers were generated in the interdiffusion zone. Cross-sectional views of the reaction zones show the presence of three distinguishable layers. The Ni3Al terminal component is followed by NiAl, Ni5.4Al1Si2, Ni(5.4−x)Al1Si2 + C layers, and the SiC terminal component. The Ni5.4Al1Si2 layer shows carbon precipitation free, while modulated carbon bands were formed in the Ni(5.4−x)Al1Si2 + C layer. The NiAl layer shows dramatic contrast difference with respect to the Ni3Al and Ni5.4Al1Si2 layers, and is bounded by the Ni3Al/NiAl and Ni5.4Al1Si2/NiAl phase boundaries. The kinetics of the NiAl formation is limited by diffusion, and the growth rate constant is measured to be 2 ⊠ 10−10 cm2/s. The thickness of the reaction zone on the SiC side is always thinner than that on the Ni3Al side and no parabolic growth rate is obeyed, suggesting that the decomposition of the SiC may be a rate limiting step for the SiC/Ni3Al reactions. The carbon precipitates were found to exist in either a disordered or partially ordered (graphitic) state, depending upon their locations from the SiC interface. The formation of NiAl phase is discussed based on an Al-rejection model, as a result of a prior formation of Ni–Al–Si ternary phase. A thermodynamic driving force for the SiC/Ni3Al reactions is suggested.
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22

Boldyreva, E. V. "Solid-state reactions of inorganic compounds." Acta Crystallographica Section A Foundations of Crystallography 52, a1 (August 8, 1996): C424. http://dx.doi.org/10.1107/s0108767396082566.

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23

Kaupp, Gerd, Jens Schmeyers, Michael Haak, Thorsten Marquardt, and Andreas Herrmann. "AFM in Organic Solid State Reactions." Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals 276, no. 1-2 (February 1996): 315–37. http://dx.doi.org/10.1080/10587259608039392.

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24

Tarasov, V. P., and G. A. Kirakosyan. "Aluminohydrides: Structures, NMR, solid-state reactions." Russian Journal of Inorganic Chemistry 53, no. 13 (November 29, 2008): 2048–81. http://dx.doi.org/10.1134/s0036023608130044.

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25

Khriachtchev, Leonid, Mika Pettersson, Jan Lundell, and Markku Räsänen. "Intermediate reactions in solid-state photolysis." Journal of Chemical Physics 114, no. 18 (May 8, 2001): 7727–30. http://dx.doi.org/10.1063/1.1370938.

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26

SCHMALZRIED, H., and M. BACKHAUS-RICOULT. "ChemInform Abstract: Internal Solid State Reactions." ChemInform 24, no. 19 (August 20, 2010): no. http://dx.doi.org/10.1002/chin.199319262.

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27

TODA, F. "ChemInform Abstract: Solid State Organic Reactions." ChemInform 25, no. 7 (August 19, 2010): no. http://dx.doi.org/10.1002/chin.199407308.

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28

TODA, F. "ChemInform Abstract: Organic Solid State Reactions." ChemInform 26, no. 20 (August 18, 2010): no. http://dx.doi.org/10.1002/chin.199520290.

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29

Feder, K., K. Gance, and E. J. Cotts. "Calorimetric study of solid state reactions." Pure and Applied Chemistry 65, no. 5 (January 1, 1993): 895–900. http://dx.doi.org/10.1351/pac199365050895.

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30

Hajipour, Abdol R., and Shadpour E. Mallakpour. "Organic Reactions under Solid-State Conditions." Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals 356, no. 1 (February 1, 2001): 371–87. http://dx.doi.org/10.1080/10587250108023716.

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31

Seifert, H. J. "Retarded solid state reactions III [1]." Journal of thermal analysis 49, no. 3 (August 1997): 1207–10. http://dx.doi.org/10.1007/bf01983676.

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32

LEUTE, V. "Solid state reactions in semiconductor systems." Solid State Ionics 17, no. 3 (October 1985): 185–212. http://dx.doi.org/10.1016/0167-2738(85)90142-0.

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33

Boldyreva, E. V. "Feed-back in solid-state reactions." Reactivity of Solids 8, no. 3-4 (July 1990): 269–82. http://dx.doi.org/10.1016/0168-7336(90)80025-f.

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34

Im, Juwon, Jaechul Kim, Sukjin Kim, Bosup Hahn, and Fumio Toda. "N-Glycosylation reactions in the solid to solid state." Tetrahedron Letters 38, no. 3 (January 1997): 451–52. http://dx.doi.org/10.1016/s0040-4039(96)02323-4.

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35

Mir, M. Amin, and Mohammad Waqar Ashraf. "TG, DTA Pyrolytic Analysis of Cobalt, Nickel, Copper, Zinc, and 5,8-Dihydroxy-1,4-Naphthoquinone Chelate Complexes." Journal of Chemistry 2021 (May 4, 2021): 1–13. http://dx.doi.org/10.1155/2021/6691137.

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The solid state reactions identified on the TG traces with correspondence to DTG peaks consequent to the nonisothermal decomposition of polymetallic chelates of the naphthazarin with Zn (II), Co (II), Ni (II), and Cu (II) over the temperature range ambient at 800°C have been studied kinetically following the Dave and Chopra method as these solid state reactions exhibited their resemblance with the Freeman recommended reaction for kinetic studies. The solid state reactions as described followed first order kinetics. The kinetic data showed the very low value of Z for each of the solid state reaction in reference, concluding on the solid state reactions (the nonisothermal decomposition of polymetallic chelate of Zn (II), Co (II), Ni (II), and Cu (II) as slow reactions).
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36

Kolb, Vera M. "On the applicability of solventless and solid-state reactions to the meteoritic chemistry." International Journal of Astrobiology 11, no. 1 (November 18, 2011): 43–50. http://dx.doi.org/10.1017/s1473550411000310.

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AbstractMost chemical reactions on asteroids, from which meteors and meteorites originate, are hypothesized to occur primarily in the solid mixtures. Some secondary chemical reactions may have occurred during the periods of the aqueous alteration of the asteroids. A myriad of organic compounds have been isolated from the meteorites, but the chemical conditions during which they were formed are only partially elucidated. In this paper, we propose that numerous meteoritic organic compounds were formed by the solventless and solid-state reactions that were only recently explored in conjunction with the green chemistry. A typical solventless approach exploits the phenomenon of the mixed melting points. As the solid materials are mixed together, the melting point of the mixture becomes lower than the melting points of its individual components. In some cases, the entire mixture may melt upon mixing. These reactions could then occur in a melted state. In the traditional solid-state reactions, the solids are mixed together, which allows for the intimate contact of the reactants, but the reaction occurs without melting. We have shown various examples of the known solventless and solid-state reactions that are particularly relevant to the meteoritic chemistry. We have also placed them in a prebiotic context and evaluated them for their astrobiological significance.
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37

Chou, T. C., and A. Joshi. "Solid state interfacial reactions of Ti3Al with Si3N4 and SiC." Journal of Materials Research 7, no. 5 (May 1992): 1253–65. http://dx.doi.org/10.1557/jmr.1992.1253.

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Solid state interfacial reactions of Ti3Al with Si3N4 and SiC have been studied via both bulk and thin film diffusion couples at temperatures of 1000 and 1200 °C. The nature of reactions of Ti3Al with Si3N4 and SiC was found to be similar. Only limited reactions were detected in samples reacted at 1000 °C. In the Ti3Al/Si3N4, layered reaction products consisting of mainly titanium silicide(s), titanium-silicon-aluminide, and titanium-silicon-nitride were formed; in the Ti3Al/SiC, the reaction product was primarily titanium-silicon-carbide. In both cases, silicon was enriched near the surface region, and aluminum was depleted from the reacted region. Reactions at 1200 °C resulted in a drastic change of the Si distribution profiles; the enrichment of Si in near surface regions was no longer observed, and the depletion of Al became more extensive. Titanium nitride and titanium-silicon-carbide were the major reaction products in the Ti3Al/Si3N4 and Ti3Al/SiC reactions, respectively. Mechanisms of driving the variation of Si, N, and C diffusion behavior (as a function of temperature) and the depletion of Al from the diffusion zone are suggested. It is proposed that reactions of Ti3Al with Si3N4 and SiC lead to in situ formation of a diffusion barrier, which limits the diffusion kinetics and further reaction. The thermodynamic driving force for the Ti3Al/Si3N4 reactions is discussed on the basis of Gibbs free energy.
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38

Chou, T. C., A. Joshi, and J. Wadsworth. "Solid state reactions of SiC with Co, Ni, and Pt." Journal of Materials Research 6, no. 4 (April 1991): 796–809. http://dx.doi.org/10.1557/jmr.1991.0796.

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Solid state reactions between SiC ceramics and Co, Ni, and Pt metals have been studied at temperatures between 800 and 1200 °C for various times under He or vacuum conditions. Reactions between the metals and SiC were extensive above 900 °C. Various metal silicides and carbon precipitates were formed in layered reaction zones. Interfacial melting was also observed at certain temperatures; teardrop-shaped reaction zones, porosity, and dendritic microstructure resulting from melting/solidification were evident. The metal/ceramic interfaces exhibited either planar or nonplanar morphologies, depending upon the nature of the metal/ceramic reactions. Concave interfacial contours were observed when interfacial melting occurred. By contrast, planar interfaces were observed in the absence of interfacial melting. In all cases, the decomposition of SiC was sluggish and may serve as a rate limiting step for metal/ceramic reactions. Free unreacted carbon precipitates were formed in all the reaction zones and the precipitation behavior was dependent upon the metal system as well as the location with respect to the SiC reaction interface. Modulated carbon bands, randomly scattered carbon precipitates, and/or carbon-denuded bands were formed in many of the reaction zones, and the carbon existed in a mixed state containing both amorphous and graphitic forms.
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39

Lee, Byeong-Joo. "Thermodynamic analysis of solid-state metal/Si interfacial reactions." Journal of Materials Research 14, no. 3 (March 1999): 1002–17. http://dx.doi.org/10.1557/jmr.1999.0134.

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An attempt has been made to interpret the experimentally reported transitions of layer sequences during the Co/Si, Ti/Si, and Ni/Si interfacial reactions in a consistent way, and to build a thermodynamic calculation scheme that enables it. The basic ideas are that the silicide with the highest driving force of formation under a metastable local equilibrium state at an interface would form first at the lowest temperature, and that when several silicides can nucleate simultaneously and compete for growth at an initial stage of a high temperature reaction, the one whose composition is closest to those of surrounding phases would form a continuous interfacial layer first and grow thicker. A critical review of literature information has also been made in order to clarify the first-forming silicide and silicide formation sequence in each metalySi interfacial reaction. The observed first-forming crystalline silicides, CoSi, Ti5Si3, and Ni2Si, in each metalySi interfacial reaction were in agreement with the present prediction based on the first idea. The reason why Co2Si and C49 TiSi2 have frequently been observed in high temperature Co/Si and TiySi reactions as if they were the first-forming crystalline silicides could also be explained based on the second idea. By combining both ideas, a general thermodynamic calculation scheme that can be applied for analysis, rationalization, and even prediction of interfacial reactions between different materials could be suggested.
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40

Johnson, Matthew T., Hermann B. Schmalzried, and C. Barry Carter. "Heterogeneous solid-state reactions between MgO(00l) and iron oxide." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 642–43. http://dx.doi.org/10.1017/s0424820100165677.

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The transport properties of the diffusing species in heterogeneous solid-state reactions are affected by concentration gradients, temperature gradients, stress fields and electric fields. In the present study, interfacial reactions between thin films of iron oxide and bulk monocrystalline MgO{001}, resulting in the formation of the spinel product MgFe2O4, were carried out separately as a function of time and temperature, applied external electric field and partial pressure of oxygen. Electron microscopy techniques have been utilized to investigate the reaction kinetics and interface morphology.The reaction couples were produced by means of pulsed-laser deposition (PLD). The setup for PLD has been described elsewhere. By depositing high-quality oxide films on bulk substrates, a well controlled geometry can be fabricated which is conducive to the study of fundamental processes in solid-state reactions. In producing the reaction couples, 600nm of iron oxide was deposited on monocrystalline MgO{001}. The reaction couples were then reacted under varying conditions and analyzed, using both scanning (SEM) and transmission electron microscopy (TEM).
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41

Meyer, K., and D. Schultze. "Thermal analysis and microstructure of solids and solid state reactions." Fresenius' Journal of Analytical Chemistry 349, no. 1-3 (1994): 84–90. http://dx.doi.org/10.1007/bf00323228.

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42

Johnson, Matthew T., and C. Barry Carter. "solid-state reactions in the presence of an electric field." Microscopy and Microanalysis 3, S2 (August 1997): 623–24. http://dx.doi.org/10.1017/s143192760001000x.

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It is well known that diffusion in ionic materials occurs primarily by the movement of charged species. Therefore, an electric field should provide a very powerful driving force for mass transport. In the present study, solid-state reactions, in the presence of an electric field, have been carried out between thin films of In2O3 and bulk monocrystalline MgO ﹛001﹜. In solid-state reactions of this type, reaction rates and interfacial stability are affected by the transport properties of the reacting ions. by applying an electric field across the sample, at elevated temperatures, the reaction rates and interfaces are affected as a result of ionic conductivity. Through the use of electron microscopy techniques the reaction kinetics and interface morphology have been investigated, in this spinel forming system, to gain a better understanding of the influence of an electric field on interface morphology and solid-state reactions.The reaction couples used in this study were produced by means of pulsed-laser deposition (PLD).
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43

Rijnders, M. R., A. A. Kodentsov, Csaba Cserháti, J. van den Akker, and F. J. J. van Loo. "Periodic Layer Formation during Solid State Reactions." Defect and Diffusion Forum 129-130 (March 1996): 253–68. http://dx.doi.org/10.4028/www.scientific.net/ddf.129-130.253.

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44

Spinolo, Giorgio, Ilenia G. Tredici, and Sonia Pin. "Oxide – Oxide Reactions in the Solid State." Current Inorganic Chemistry 3, no. 1 (February 1, 2013): 23–34. http://dx.doi.org/10.2174/1877944111303010004.

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45

Gas, Patrick, and Jean Bernardini. "Grain Boundary Diffusion and Solid State Reactions." Solid State Phenomena 56 (August 1997): 37–50. http://dx.doi.org/10.4028/www.scientific.net/ssp.56.37.

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46

Kaupp, Gerd. "Solid-state reactions, dynamics in molecular crystals." Current Opinion in Solid State and Materials Science 6, no. 2 (April 2002): 131–38. http://dx.doi.org/10.1016/s1359-0286(02)00041-4.

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47

Giron, Daniele. "Impact of Solid State Reactions on Medicaments." Molecular Crystals and Liquid Crystals Incorporating Nonlinear Optics 161, no. 1 (August 1988): 77–100. http://dx.doi.org/10.1080/00268948808070241.

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48

Kaftory, M., E. Handelsman-Benory, and M. Botoshansky. "Rearrangement reactions in solid-state organic compounds." Acta Crystallographica Section A Foundations of Crystallography 52, a1 (August 8, 1996): C423. http://dx.doi.org/10.1107/s010876739608258x.

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49

Biradha, Kumar, and Ramkinkar Santra. "Crystal engineering of topochemical solid state reactions." Chem. Soc. Rev. 42, no. 3 (2013): 950–67. http://dx.doi.org/10.1039/c2cs35343a.

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50

Varga, Katarina, Jana Volarić, and Hrvoj Vančik. "Crystal disordering and organic solid-state reactions." CrystEngComm 17, no. 6 (2015): 1434–38. http://dx.doi.org/10.1039/c4ce01915f.

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This investigation is a case study about the nature of the adiabatic organic solid-state reactions by kinetic measurements of the processes that occur during the dimerization of aromatic nitroso compounds under three different topochemical environments in crystals.
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