Relevant bibliographies by topics / Reactive ion etch (RIE) at sub 20 nm scale

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Conference papers

Academic literature on the topic 'Reactive ion etch (RIE) at sub 20 nm scale'

Author: Grafiati
Published: 14 March 2023
Last updated: 31 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Reactive ion etch (RIE) at sub 20 nm scale.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Reactive ion etch (RIE) at sub 20 nm scale"

1

Ghaznavi, Ziam, Nicholas Butcher, Dragan Djurdjanovic, and S. V. Sreenivasan. "Roll-to-roll reactive ion etching of large-area nanostructure arrays in Si: Process development, characterization, and optimization." Journal of Vacuum Science & Technology B 41, no. 2 (2023): 022802. http://dx.doi.org/10.1116/6.0002261.

Full text
Abstract:
Roll-to-roll (R2R) nanofabrication processes are recognized as key enabling-technologies for many next-generation applications in flexible electronics, displays, energy generation, storage, as well as healthcare. However, R2R processing techniques reported in the literature currently lack a scalable method of performing high-throughput nanoscale pattern transfer of geometry requiring a high degree of fidelity in terms of critical dimension resolution, etch uniformity, and aspect ratio. Reactive ion etching (RIE) addresses the need for sub-10 nm pattern transfer with large-area uniformity in wa
APA, Harvard, Vancouver, ISO, and other styles
2

Yang, Xin, Himamshu Nallan, Brennan M. Coffey, and John G. Ekerdt. "Area selective atomic layer deposition of SnO2 as an etch resist in fluorine based processes." Journal of Vacuum Science & Technology A 41, no. 3 (2023): 032402. http://dx.doi.org/10.1116/6.0002429.

Full text
Abstract:
Here, we propose SnO2 as a reactive ion etching (RIE) mask in fluorine-based etching processes. Tin forms nonvolatile compounds with fluorine at the process temperatures enabling tin to function as an etch mask. We investigate atomic layer deposition (ALD) of SnO2 on silicon thermal oxide, silicon native oxide, H-terminated Si(001), and polystyrene surfaces using tetrakis(dimethylamino) tin(IV) and H2O at 170 °C to understand film nucleation patterns. Pinhole free films of approximately 1 nm thick SnO2 form on silicon thermal oxide and silicon native oxide and resist etching with SF6 under con
APA, Harvard, Vancouver, ISO, and other styles
3

Aksakal, Rukiye, and Bulent Cakmak. "ICP-RIE etching of InP using CH4/H2, CH4/H2/Cl2, H2/Cl2 and Cl2: process development and optimization." Laser Physics 35, no. 6 (2025): 065002. https://doi.org/10.1088/1555-6611/addd89.

Full text
Abstract:
Abstract In this paper, we investigate inductively coupled plasma reactive ion etching of InP. The evolution of the surface/sidewall roughness and anisotropy is comparatively analyzed using different flow rates of CH4/H2, CH4/H2/Cl2, H2/Cl2 and Cl2 gases. In the study, RF bias power (P RIE) and inductive power (P ICP) were maintained at 150 W and 400 W, respectively. We have also reported results of the etched structures, including values of roughness average (Ra), inclination angle and etch rates using scanning electron microscopy and 3D profilometer images. Not only hydrocarbon chemistries (
APA, Harvard, Vancouver, ISO, and other styles
4

Golani, Prafful, Roshan J. Tirukkonda, Aaron N. Fancher, et al. "Understanding 3D anisotropic reactive ion etching of oxide-metal stacks." Journal of Vacuum Science & Technology B 41, no. 6 (2023). http://dx.doi.org/10.1116/6.0003105.

Full text
Abstract:
Scaling semiconductor devices necessitates the fabrication of high-aspect-ratio narrow features through the precise etching of multiple layers comprising alternating materials, each with sub-20 nm thickness. However, etching dissimilar materials, such as alternating metal and oxide layers, pose significant challenges due to inherent discrepancies in vertical and lateral etch rates. This study demonstrates the feasibility of etching a stack comprising 10 layers of silicon dioxide (SiO2) and molybdenum (Mo) using an Oxford Instruments ICP RIE tool operating at a low power regime (bias < 2
APA, Harvard, Vancouver, ISO, and other styles
5

Hsiao, Shih‐Nan, Makoto Sekine, Nikolay Britun, et al. "Pseudo‐Wet Plasma Mechanism Enabling High‐Throughput Dry Etching of SiO2 by Cryogenic‐Assisted Surface Reactions." Small Methods, June 2, 2024. http://dx.doi.org/10.1002/smtd.202400090.

Full text
Abstract:
AbstractManufacturing semiconductor devices requires advanced patterning technologies, including reactive ion etching (RIE) based on the synergistic interactions between ions and etch gas. However, these interactions weaken as devices continuously scale down to sub‐nanoscale, primarily attributed to the diminished transport of radicals and ions into the small features. This leads to a significant decrease in etch rate (ER). Here, a novel synergistic interaction involving ions, surface‐adsorbed chemistries, and materials at cryogenic temperatures is found to exhibit a significant increase in th
APA, Harvard, Vancouver, ISO, and other styles

Dissertations / Theses on the topic "Reactive ion etch (RIE) at sub 20 nm scale"

1

DIALAMEH, MASOUD. "Fabrication and characterization of reference nano and micro structures for 3D chemical analysis." Doctoral thesis, Politecnico di Torino, 2019. http://hdl.handle.net/11583/2742524.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Reactive ion etch (RIE) at sub 20 nm scale"

1

Bai, John Guofeng, and Jae-Hyun Chung. "Shadow Edge Lithography for Wafer-Scale Nanofabrication." In ASME 2007 International Mechanical Engineering Congress and Exposition. ASMEDC, 2007. http://dx.doi.org/10.1115/imece2007-42265.

Full text
Abstract:
We propose shadow edge lithography (SEL) as a wafer-scale nanofabrication method. The shadow effect of “line-ofsight” in high-vacuum evaporation is analyzed theoretically to predict the geometric distributions of the fabricated nanoscale gaps. In the experiment, nanoscale gap patterns are created by the shadow of Al edges which are prepatterned using e-beam evaporation and the conventional ultraviolet lithography. Feasibility of the SEL is demonstrated by the fabrication of nanogaps having the width ranging from 15 to 100 nm on 4-inch Si wafers. Furthermore, by using the height differences in
APA, Harvard, Vancouver, ISO, and other styles
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography