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Relevant bibliographies by topics / Reactive ion etching (RIE)

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Journal articles

Academic literature on the topic 'Reactive ion etching (RIE)'

Author: Grafiati

Published: 4 June 2021

Last updated: 5 February 2022

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Journal articles on the topic "Reactive ion etching (RIE)"

1

Cole, M. W., M. Dutta, J. Rossabi, and J. L. Lehman. "Microstructural evaluation of reactive ion etched - regrown GaAs." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (1990): 724–25. http://dx.doi.org/10.1017/s0424820100176757.

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Reactive ion etching (RIE) is a preferred dry process step for fabrication of submicron III-V semiconductor device structures. This kinetically assisted chemical dry etch process offers several important advantages over other etching methods, namely etch anisotropy, etch rate control, selectively, accuracy, uniformity across the wafer and reproducibility. As a result of these desirable characteristics, a number of semiconductor device designs involve REE in their device fabrication process. Some of the more novel designs involve lateral quantum well arrays, whereby fabrication requires molecul

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2

Karouta, F., B. Jacobs, I. Moerman, et al. "Highly Chemical Reactive Ion Etching of Gallium Nitride." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 894–900. http://dx.doi.org/10.1557/s1092578300005238.

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A highly chemical reactive ion etching process has been developed for MOVPE-grown GaN on sapphire. The key element for the enhancement of the chemical property during etching is the use of a fluorine containing gas in a chlorine based chemistry. In the perspective of using GaN substrates for homo-epitaxy of high quality GaN/AlGaN structures we have used the above described RIE process to smoothen Ga-polar GaN substrates. The RMS value, measured by AFM, went from 20 Å (after mechanical polishing) down to 4 Å after 6 minutes of RIE. Etching N-polar GaN resulted in a higher etch rate than Ga-pola

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3

Huff, Michael. "Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication." Micromachines 12, no. 8 (2021): 991. http://dx.doi.org/10.3390/mi12080991.

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This paper reviews the recent advances in reaction-ion etching (RIE) for application in high-aspect-ratio microfabrication. High-aspect-ratio etching of materials used in micro- and nanofabrication has become a very important enabling technology particularly for bulk micromachining applications, but increasingly also for mainstream integrated circuit technology such as three-dimensional multi-functional systems integration. The characteristics of traditional RIE allow for high levels of anisotropy compared to competing technologies, which is important in microsystems device fabrication for a n

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4

Palianysamy, Moganraj, Zaliman Sauli, Uda Hashim, Vithyacharan Retnasamy, Steven Taniselass, and Ramzan Mat Ayub. "Reactive Ion Etching Parameter Effect on Aluminum Bond Pad Surface Morphology." Advanced Materials Research 925 (April 2014): 140–43. http://dx.doi.org/10.4028/www.scientific.net/amr.925.140.

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Reactive Ion Etching (RIE) is an important process in fabrication of semiconductor devices. Design Of Experiment (DOE) has been used to study the effect of Reactive Ion Etch (RIE) towards surface morphology of aluminum bond pad. Important RIE factors involved in this experimental study are ratio of Tetrafluoromethane (CF4), Argon gas flow, BIAS, and ICP power. Different combinations of these factors produces different results of surface morphologies which was obtained using Atomic Force Microscopic (AFM). Produced results shows that overall surface roughness of the pad is affected by RIE and D

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5

Palianysamy, Moganraj, Zaliman Sauli, Uda Hashim, Vithyacharan Retnasamy, Steven Taniselass, and Ramzan Mat Ayub. "Reactive Ion Etching Parameter Effect on Aluminum Bond Pad Surface Morphology." Advanced Materials Research 925 (April 2014): 84–87. http://dx.doi.org/10.4028/www.scientific.net/amr.925.84.

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Reactive Ion Etching (RIE) is an important process in fabrication of semiconductor devices. Design Of Experiment (DOE) has been used to study the effect of Reactive Ion Etch (RIE) towards surface morphology of aluminum bond pad. Important RIE factors involved in this experimental study are ratio of Tetrafluoromethane (CF4), Argon gas flow, BIAS, and ICP power. Different combinations of these factors produces different results of surface morphologies which was obtained using Atomic Force Microscopic (AFM). Produced results shows that overall surface roughness of the pad is affected by RIE and D

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6

Retnasamy, Vithyacharan, Zaliman Sauli, Moganraj Palianysamy, Steven Taniselass, Phaklen Ehkan, and Fairul Afzal Ahmad Fuad. "Wettability Study Using O₂and Ar RIE Gas Treatment on Aluminium Surface." Advanced Materials Research 896 (February 2014): 233–36. http://dx.doi.org/10.4028/www.scientific.net/amr.896.233.

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Wettability is one of the most important aspects in microfluid technology. The effect of surface roughness on the wettability by a liquid has been studied experimentally using Design of Experiment(DOE). Sixteen samples were etched using Reactive Ion Etching (RIE) technique with different combination of parameters. RIE parameters concerned in this experiment are ratio of Oxygen, Argon, ICP power and BIAS power. Reactive Ion Etching influences surface morphology which is correlated with the contact angle produced. This preliminary study is to gain information on the how does RIE affects the alum

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7

Li, Y. X., M. R. Wolffenbuttel, P. J. French, M. Laros, P. M. Sarro, and R. F. Wolffenbuttel. "Reactive ion etching (RIE) techniques for micromachining applications." Sensors and Actuators A: Physical 41, no. 1-3 (1994): 317–23. http://dx.doi.org/10.1016/0924-4247(94)80130-4.

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8

Shim, Ji-Myung, Hyun-Woo Lee, Kyeong-Yeon Cho, et al. "17.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal Etching." International Journal of Photoenergy 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/248182.

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For lower reflectance, we applied a maskless plasma texturing technique using reactive ion etching (RIE) on acidic-textured multicrystalline silicon (mc-Si) wafer. RIE texturing had a deep and narrow textured surface and showed excellent low reflectance. Due to plasma-induced damage, unless the RIE-textured surfaces have the proper damage removal etching (DRE), they have a drop inVocand FF. RIE texturing with a proper DRE had sufficiently higher short circuit current(Isc)than acidic-textured samples without a drop in open circuit voltage(Voc). And in order to improve efficiency of mc-Si solar

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9

Sauli, Zaliman, Vithyacharan Retnasamy, Ong Tee Say, and Kok Soo Yih. "Metallic Layer Reflectance Analysis Using Design of Experiment." Advanced Materials Research 893 (February 2014): 461–64. http://dx.doi.org/10.4028/www.scientific.net/amr.893.461.

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In this work, a Full Factorial Experimentation technique, Design of Experiment (DOE) was developed and used to control the parameter of RIE (Reactive Ion Etching) process on a silicon wafer with aluminium layer. The objective of this work is to examine the Reactive Ion Etching (RIE) process on aluminium with different parameter, which are temperature, vacuum, RF (Radio Frequency) power and gas flow. Then, AFM (Atomic Force Microscope) and Lambda 950 spectrometer are used to analyse the grain size and light reflectance on the test specimen after RIE process. From the result, all four parameters

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10

Jeng, S. J., and G. S. Oehrlein. "Silicon near-surface damage induced by reactive ion etching." Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 244–45. http://dx.doi.org/10.1017/s0424820100126123.

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Reactive ion etching (RIE) is an anisotropic etching process which has been used to etch silicon oxide, silicon nitride and polysilicon films. Due to the nonuniformities of etch rate and film thickness, overetching is often required to ensure the complete removal of these films. Previous X-ray photoemission spectroscopy (XPS), He ion channeling, nuclear reaction profiling, Raman scattering and ellipsometry studies have indicated the presence of a fluorocarbon film (30-40 Å) on Si, a heavily disordered layer (∼30 Å) and the etching gas related impurity implantation region (∼250 Å) underneath th

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