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Journal articles on the topic 'Reactive ion etching (RIE)'

Author: Grafiati

Published: 4 June 2021

Last updated: 5 February 2022

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1

Cole, M. W., M. Dutta, J. Rossabi, and J. L. Lehman. "Microstructural evaluation of reactive ion etched - regrown GaAs." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (1990): 724–25. http://dx.doi.org/10.1017/s0424820100176757.

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Reactive ion etching (RIE) is a preferred dry process step for fabrication of submicron III-V semiconductor device structures. This kinetically assisted chemical dry etch process offers several important advantages over other etching methods, namely etch anisotropy, etch rate control, selectively, accuracy, uniformity across the wafer and reproducibility. As a result of these desirable characteristics, a number of semiconductor device designs involve REE in their device fabrication process. Some of the more novel designs involve lateral quantum well arrays, whereby fabrication requires molecul

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2

Karouta, F., B. Jacobs, I. Moerman, et al. "Highly Chemical Reactive Ion Etching of Gallium Nitride." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 894–900. http://dx.doi.org/10.1557/s1092578300005238.

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A highly chemical reactive ion etching process has been developed for MOVPE-grown GaN on sapphire. The key element for the enhancement of the chemical property during etching is the use of a fluorine containing gas in a chlorine based chemistry. In the perspective of using GaN substrates for homo-epitaxy of high quality GaN/AlGaN structures we have used the above described RIE process to smoothen Ga-polar GaN substrates. The RMS value, measured by AFM, went from 20 Å (after mechanical polishing) down to 4 Å after 6 minutes of RIE. Etching N-polar GaN resulted in a higher etch rate than Ga-pola

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3

Huff, Michael. "Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication." Micromachines 12, no. 8 (2021): 991. http://dx.doi.org/10.3390/mi12080991.

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This paper reviews the recent advances in reaction-ion etching (RIE) for application in high-aspect-ratio microfabrication. High-aspect-ratio etching of materials used in micro- and nanofabrication has become a very important enabling technology particularly for bulk micromachining applications, but increasingly also for mainstream integrated circuit technology such as three-dimensional multi-functional systems integration. The characteristics of traditional RIE allow for high levels of anisotropy compared to competing technologies, which is important in microsystems device fabrication for a n

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Palianysamy, Moganraj, Zaliman Sauli, Uda Hashim, Vithyacharan Retnasamy, Steven Taniselass, and Ramzan Mat Ayub. "Reactive Ion Etching Parameter Effect on Aluminum Bond Pad Surface Morphology." Advanced Materials Research 925 (April 2014): 140–43. http://dx.doi.org/10.4028/www.scientific.net/amr.925.140.

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Reactive Ion Etching (RIE) is an important process in fabrication of semiconductor devices. Design Of Experiment (DOE) has been used to study the effect of Reactive Ion Etch (RIE) towards surface morphology of aluminum bond pad. Important RIE factors involved in this experimental study are ratio of Tetrafluoromethane (CF4), Argon gas flow, BIAS, and ICP power. Different combinations of these factors produces different results of surface morphologies which was obtained using Atomic Force Microscopic (AFM). Produced results shows that overall surface roughness of the pad is affected by RIE and D

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Palianysamy, Moganraj, Zaliman Sauli, Uda Hashim, Vithyacharan Retnasamy, Steven Taniselass, and Ramzan Mat Ayub. "Reactive Ion Etching Parameter Effect on Aluminum Bond Pad Surface Morphology." Advanced Materials Research 925 (April 2014): 84–87. http://dx.doi.org/10.4028/www.scientific.net/amr.925.84.

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Reactive Ion Etching (RIE) is an important process in fabrication of semiconductor devices. Design Of Experiment (DOE) has been used to study the effect of Reactive Ion Etch (RIE) towards surface morphology of aluminum bond pad. Important RIE factors involved in this experimental study are ratio of Tetrafluoromethane (CF4), Argon gas flow, BIAS, and ICP power. Different combinations of these factors produces different results of surface morphologies which was obtained using Atomic Force Microscopic (AFM). Produced results shows that overall surface roughness of the pad is affected by RIE and D

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Retnasamy, Vithyacharan, Zaliman Sauli, Moganraj Palianysamy, Steven Taniselass, Phaklen Ehkan, and Fairul Afzal Ahmad Fuad. "Wettability Study Using O₂and Ar RIE Gas Treatment on Aluminium Surface." Advanced Materials Research 896 (February 2014): 233–36. http://dx.doi.org/10.4028/www.scientific.net/amr.896.233.

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Wettability is one of the most important aspects in microfluid technology. The effect of surface roughness on the wettability by a liquid has been studied experimentally using Design of Experiment(DOE). Sixteen samples were etched using Reactive Ion Etching (RIE) technique with different combination of parameters. RIE parameters concerned in this experiment are ratio of Oxygen, Argon, ICP power and BIAS power. Reactive Ion Etching influences surface morphology which is correlated with the contact angle produced. This preliminary study is to gain information on the how does RIE affects the alum

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7

Li, Y. X., M. R. Wolffenbuttel, P. J. French, M. Laros, P. M. Sarro, and R. F. Wolffenbuttel. "Reactive ion etching (RIE) techniques for micromachining applications." Sensors and Actuators A: Physical 41, no. 1-3 (1994): 317–23. http://dx.doi.org/10.1016/0924-4247(94)80130-4.

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8

Shim, Ji-Myung, Hyun-Woo Lee, Kyeong-Yeon Cho, et al. "17.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal Etching." International Journal of Photoenergy 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/248182.

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For lower reflectance, we applied a maskless plasma texturing technique using reactive ion etching (RIE) on acidic-textured multicrystalline silicon (mc-Si) wafer. RIE texturing had a deep and narrow textured surface and showed excellent low reflectance. Due to plasma-induced damage, unless the RIE-textured surfaces have the proper damage removal etching (DRE), they have a drop inVocand FF. RIE texturing with a proper DRE had sufficiently higher short circuit current(Isc)than acidic-textured samples without a drop in open circuit voltage(Voc). And in order to improve efficiency of mc-Si solar

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9

Sauli, Zaliman, Vithyacharan Retnasamy, Ong Tee Say, and Kok Soo Yih. "Metallic Layer Reflectance Analysis Using Design of Experiment." Advanced Materials Research 893 (February 2014): 461–64. http://dx.doi.org/10.4028/www.scientific.net/amr.893.461.

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In this work, a Full Factorial Experimentation technique, Design of Experiment (DOE) was developed and used to control the parameter of RIE (Reactive Ion Etching) process on a silicon wafer with aluminium layer. The objective of this work is to examine the Reactive Ion Etching (RIE) process on aluminium with different parameter, which are temperature, vacuum, RF (Radio Frequency) power and gas flow. Then, AFM (Atomic Force Microscope) and Lambda 950 spectrometer are used to analyse the grain size and light reflectance on the test specimen after RIE process. From the result, all four parameters

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10

Jeng, S. J., and G. S. Oehrlein. "Silicon near-surface damage induced by reactive ion etching." Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 244–45. http://dx.doi.org/10.1017/s0424820100126123.

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Reactive ion etching (RIE) is an anisotropic etching process which has been used to etch silicon oxide, silicon nitride and polysilicon films. Due to the nonuniformities of etch rate and film thickness, overetching is often required to ensure the complete removal of these films. Previous X-ray photoemission spectroscopy (XPS), He ion channeling, nuclear reaction profiling, Raman scattering and ellipsometry studies have indicated the presence of a fluorocarbon film (30-40 Å) on Si, a heavily disordered layer (∼30 Å) and the etching gas related impurity implantation region (∼250 Å) underneath th

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Cole, M. W., S. Saliman, C. B. Cooper, and M. Dutta. "Analysis of ion-induced damage in GaAs etched with chemically reactive SiCl4." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 648–49. http://dx.doi.org/10.1017/s0424820100087550.

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Reactive ion etching (RIE) is an important technique for the fabrication of III-V semiconductor devices. Although RIE has demonstrated high - resolution fabrication of structures and devices on the sub-micron scale there is concern that this technique may introduce damage which may limit its utility. Previous work regarding the material quality of these etched surfaces indicates the presence of undesirable radiation damage and material contamination resultant from the RIE process. The consequences of this damage undoubtably leads to deterioration in device performance. In the present work we h

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Zheng, Yu, Piaopiao Gao, Lianqiong Jiang, Xiaochao Kai, and Ji’an Duan. "Surface Morphology of Silicon Waveguide after Reactive Ion Etching (RIE)." Coatings 9, no. 8 (2019): 478. http://dx.doi.org/10.3390/coatings9080478.

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The side wall profile roughness of the silicon waveguide prepared by electron beam lithography and reactive ion etching is extracted by using the boundary tracing method. The maximum, minimum, and average roughness values are extracted from the side wall boundary, and the changes of the side wall boundary of waveguide after electron beam exposure and reactive ion etching were compared. The roughness variation of the waveguide side wall is similar with the same length. And roughness from the bottom of the waveguide etched region is measured directly by laser confocal microscope and roughness co

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Chung, Gwiy Sang, and Chang Min Ohn. "Etching Characteristics of Polycrystalline 3C-SiC Films Using Enhanced RIE." Materials Science Forum 600-603 (September 2008): 875–78. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.875.

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This paper describes magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC thin films grown on thermally oxidized Si substrates by atmospheric pressure chemical vapor deposition (APCVD). The best vertical structures were obtained by the addition of 40 % O2, 16 % Ar, and 44 % CHF3 reactive gas at 40 mTorr of chamber pressure. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. These results show that in a magnetron RIE system, it is possible to etch SiC with lower power than that of the commercial RIE system. Therefore, poly 3C-SiC etched by ma

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14

Sun, S. P., and S. P. Murarka. "Reactive‐Ion Etching (RIE) of TaSi2 / n + Polysilicon Bilayers." Journal of The Electrochemical Society 135, no. 9 (1988): 2353–57. http://dx.doi.org/10.1149/1.2096269.

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15

Paul, A. K., K. Sodhi, A. K. Dimri, P. C. Banerjie, and R. P. Bajpai. "Reactive Ion Etching (RIE) System Design and its Characterisation." IETE Technical Review 15, no. 1-2 (1998): 49–54. http://dx.doi.org/10.1080/02564602.1998.11416728.

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16

Cole, M. W., and G. F. McLane. "Dry-Etch-induced damage in GaAs investigated via TEM." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 1114–15. http://dx.doi.org/10.1017/s0424820100151404.

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Plasma-assisted etching is an important III-V semiconductor fabrication technique for patterning device structures on the nanometer scale with high accuracy. The quality of the processed surface is of primary importance for most electronic applications. It is well documented that reactive ion etching (RIE), with its high self-biases, usually incurs material damage via ion bombardment which ultimately limits device performance. Magnetron ion etching (MIE) is an attractive alternative to RIE. Specifically, MIE has a lower sheath voltage than RIE and the discharge contains low to moderate energy

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Mori, Yuto, Masashi Kato, and Masaya Ichimura. "Estimation of Surface Recombination Velocities for n-Type 4H-SiC Surfaces Treated by Various Processes." Materials Science Forum 778-780 (February 2014): 432–35. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.432.

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We evaluated the carrier lifetime to estimate surface recombination velocities for 4H-SiC whose surfaces were treated by various processes. We found that the reactive ion etching (RIE) increased the surface recombination velocity, and we considered that point defects introduced by RIE influence the surface recombination velocity.

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18

Humayun, Q., and U. Hashim. "Fabrication of Micro-Gap Structure by Reactive Ion Etching Technique (RIE) for Future Reproductivity of Nanogap Biosensor." Advanced Materials Research 1109 (June 2015): 64–68. http://dx.doi.org/10.4028/www.scientific.net/amr.1109.64.

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The important role of reactive ion etching (RIE) technique is to etch the semiconductor surface directionally. The purpose of the current research is to fabricate polysilicon micro-gap structures by RIE technique for future biosensing application. Therefore zero-gap microstructure of butterfly topology was designed by using AutoCAD software and finally the designed was transferred to commercial chrome glass photomask. Ploysilicon wafer samples were selected to achieve high conductivity during electrical characterization measurement. The fabrication process starts from samples resist coating an

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Chowdhury, Sauvik, Kensaku Yamamoto, and T. Paul Chow. "Effect of Activation Annealing and Reactive Ion Etching on MOS Channel Properties of (11-20) Oriented 4H-SiC." Materials Science Forum 858 (May 2016): 635–38. http://dx.doi.org/10.4028/www.scientific.net/msf.858.635.

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In this paper we have investigated the effect of two key processing steps for the fabrication of 4H-SiC trench gate power MOSFETs, namely activation annealing and reactive ion etching on the MOS interface properties of a-face (11-20) 4H-SiC. By optimizing activation annealing conditions, high channel mobility (µfe) of 111 cm2/V.s, threshold voltage (VT) of 3.5V and subthreshold slope (S) of 194 mV/dec was obtained. However, after reactive ion etching (RIE) of the surface, µfe reduced to 81 cm2/V.s with increase in VT to 5V and S to 331 mV/dec. This is possibly due to increase in interface trap

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Kabalan, Amal. "A Comparative Study on the Effects of Passivation Methods on the Carrier Lifetime of RIE and MACE Silicon Micropillars." Applied Sciences 9, no. 9 (2019): 1804. http://dx.doi.org/10.3390/app9091804.

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Silicon micropillars have been suggested as one of the techniques for improving the efficiency of devices. Fabrication of micropillars has been done in several ways—Metal Assisted Chemical Etching (MACE) and Reactive Ion Etching (RIE) being the most popular techniques. These techniques include etching through the surface which results in surface damage that affects the carrier lifetime. This paper presents a study that compares the carrier lifetime of micropillars fabricated using RIE and MACE methods. It also looks at increasing carrier lifetime by surface treatment using three main approache

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Amat, Esteve, Alberto del Moral, Marta Fernández-Regúlez, et al. "Exploring Strategies to Contact 3D Nano-Pillars." Nanomaterials 10, no. 4 (2020): 716. http://dx.doi.org/10.3390/nano10040716.

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This contribution explores different strategies to electrically contact vertical pillars with diameters less than 100 nm. Two process strategies have been defined, the first based on Atomic Force Microscope (AFM) indentation and the second based on planarization and reactive ion etching (RIE). We have demonstrated that both proposals provide suitable contacts. The results help to conclude that the most feasible strategy to be implementable is the one using planarization and reactive ion etching since it is more suitable for parallel and/or high-volume manufacturing processing.

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Wang, Shu Ya, Yun Ying Fu, Li Ping Dai, and Guo Jun Zhang. "The Etching Reaction and Surface Reconstruction of Bismuth Zinc Niobate Thin Film in SF6/Ar Plasma." Advanced Materials Research 763 (September 2013): 28–32. http://dx.doi.org/10.4028/www.scientific.net/amr.763.28.

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Reactive ion etching (RIE) of bismuth zinc niobate (BZN) thin films using an SF6/Ar plasma has been studied. An optimum process parameters was obtained according to the highest etch rate of 90nm/min. Under this etching condition, the crystal structural properties and surface morphology of the BZN film before and after etching were characterized using X-ray diffraction (XRD), the film showed a surface reconstruction after etching, a cubic pyrochlore structure orientation transition was observed from preferential (222) to (400), and ZnF2 phases were detected. The film surface was chemically anal

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Lee, W. J., Yoon B. Kim, W. Y. Lee, S. H. Han, J. H. Han, and K. K. Jee. "Adhesion Properties of Copper/Polyimide Film Modified by Reactive Ion Etching(RIE)." Solid State Phenomena 124-126 (June 2007): 1593–96. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.1593.

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Surface modification of polyimide(PI) films was treated with oxygen RIE by varying ion doses from 1x1016 to 1x1018 ions/cm2 at an ion beam energy of 250 eV. Following the modification of PI surface, metal films consisting of NiCr/Cu and Cu were deposited on modified PI films by D.C. magnetron sputtering and electroplating, respectively. The surface modified PI film was characterized by XPS, AFM, SEM and contact angle measurement, respectively. The water contact angle of PI film decreased significantly from 64° to 4.4° with an increase of ion dose, indicating that the surface energy of PI film

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Zhu, Y. W., C. H. Teo, X. J. Xu, et al. "Effects of O₂ and Ar Reactive Ion Etching on the Field Emission Properties of Aligned CuO Nanowire Films." Solid State Phenomena 121-123 (March 2007): 793–96. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.793.

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The effects of oxygen (O2) reactive ion etching (RIE) on the field emission (FE) properties of aligned CuO nanowire films are investigated systematically. It is found that the FE performance of the films is largely enhanced after initial exposure to reactive oxygen ions but degrades after extended treatment. As comparison, Ar RIE is also used to treat CuO nanowires, which, however, results in the deterioration of FE properties. The enhanced FE after O2 RIE is attributed to the shaper morphology, cleaner surface and better conductivity. On the other hand, increased work function and non-crystal

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Litz-Montanaro, Lisa. "The Art of Tungsten Etching in Semiconductor Chips." Microscopy Today 7, no. 2 (1999): 24–25. http://dx.doi.org/10.1017/s1551929500063902.

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In the course of both physical and failure analysis of semiconductor chips (i.e., verifying what you actually deposited as a layer, vs, what caused the circuit to fail), it is essential to have appropriate deprocessing tools at your disposal in order to evaluate complex semiconductor structures, Deprocessing techniques are developed for each product manufactured and involve multi-step procedures that reveal the layer-by-layer secrets of the chip, These techniques require constant tweaking in duration and procedure as the manufacturing process imposes changes and as the architecture of the semi

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Kabalan, Amal. "Native Oxide Growth on Silicon Micro-Pillars." Nano Hybrids and Composites 15 (May 2017): 1–9. http://dx.doi.org/10.4028/www.scientific.net/nhc.15.1.

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This paper presents a study on monitoring the native oxide growth on silicon micro-pillars. It also presents a comparison between the rates of oxide growth on pillars fabricated using the reactive ion etching (RIE) approach and the metal assisted chemical etching (MACE) approach. The native oxide growth is monitored using photoluminescence (PL) measurements. PL measurements showed that native silicon oxide grows at a higher rate on MACE pillars compared to RIE pillars. SEM images showed that the MACE pillars exhibit a porous outer layer while the RIE pillars show a dense outer layer. It is con

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Bischoff, Christian, Friedemann Völklein, Jana Schmitt, et al. "Design and Manufacturing Method of Fundamental Beam Mode Shaper for Adapted Laser Beam Profile in Laser Material Processing." Materials 12, no. 14 (2019): 2254. http://dx.doi.org/10.3390/ma12142254.

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Many laser material processing applications require an optimized beam profile, e.g., ring shape or Top-Hat profiles with homogeneous intensity distribution. In this study, we show a beam shaping concept leading to a phase shifting element with binary height profile as well as a very low periodicity with near diffraction limited spot size. Further advantages of so-called Fundamental Beam Mode Shaping (FBS) elements are the simplified handling, and a high efficiency and homogeneity. The calculated height profile of FBS elements are transferred in fused silica substrates using a combination of mi

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Wang, Shaoliang, Xianfang Gou, Su Zhou, et al. "Effect of Surface Structure on Electrical Performance of Industrial Diamond Wire Sawing Multicrystalline Si Solar Cells." International Journal of Photoenergy 2018 (2018): 1–4. http://dx.doi.org/10.1155/2018/7947015.

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We report industrial fabrication of different kinds of nanostructured multicrystalline silicon solar cells via normal acid texturing, reactive ion etching (RIE), and metal-assisted chemical etching (MACE) processes on diamond wire sawing wafer. The effect of different surface structure on reflectivity, lifetime, and electrical performance was systematically studied in this paper. The difference between industrial acid, RIE, and MACE textured multicrystalline silicon solar cells to our knowledge has not been investigated previously. The resulting efficiency indicates that low reflectivity surfa

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Kusumandari, Noriyuki Taoka, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, and Shigeaki Zaima. "Defects Induced by Reactive Ion Etching in Ge Substrate." Advanced Materials Research 896 (February 2014): 241–44. http://dx.doi.org/10.4028/www.scientific.net/amr.896.241.

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We investigated impacts of the Ar and CF4 plasma during reactive ion etching (RIE) on defect formation in the Ge substrates using the deep-level-transient-spectroscopy (DLTS) technique. It was found that the Ar plasma causes the roughening of the Ge surface. Moreover, the Ar plasma induces a defect with an energy level of 0.31 eV from the conduction band minimum in the Ge substrate, confirming by DLTS spectra. On the other hand, the CF4plasma hardly induces the surface roughness of Ge. However, the CF4plasma induces many kinds of electron and hole traps. It should be noted that the defects ass

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Flierl, C., I. H. White, M. Kuball, et al. "Focused Ion Beam Etching of GaN." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 769–74. http://dx.doi.org/10.1557/s1092578300003392.

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We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4

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Hotový, Ivan, Ivan Kostič, Štefan HAščík, Vlastimil ŘEháček, Jozef Liday, and Helmut Sitter. "Development and Fabrication of TiO2 Tip Arrays for Gas Sensing." Journal of Electrical Engineering 62, no. 6 (2011): 363–66. http://dx.doi.org/10.2478/v10187-011-0058-3.

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Development and Fabrication of TiO2Tip Arrays for Gas SensingTitanium oxide thin films were deposited at room temperature by reactive magnetron sputtering in a mixture of oxygen and argon on oxidized silicon substrates. The optimal etching characteristics of TiO2films by reactive ion etching (RIE) and RIE with inductively coupled plasma source (ICP) were investigated. Patterning of TiO2tip arrays by electron beam lithography and dry etching were developed. Different spot sizes 200 and 500 nm in diameter and with spacing 500 and 1000 nm were investigated with regards to the minimal size and the

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Furuya, A., F. Shimokawa, T. Matsuura, and R. Sawada. "Fluorinated polyimide fabrication by magnetically controlled reactive ion etching (MC RIE)." Journal of Micromechanics and Microengineering 4, no. 2 (1994): 67–73. http://dx.doi.org/10.1088/0960-1317/4/2/004.

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Pratiwi, Nuraini Dian, Mita Handayani, Risa Suryana, and Osamu Nakatsuka. "Fabrication of Porous Silicon using Photolithography and Reactive Ion Etching (RIE)." Materials Today: Proceedings 13 (2019): 92–96. http://dx.doi.org/10.1016/j.matpr.2019.03.194.

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LEMM, CH, ST KOLLAKOWSKI, D. BIMBERG, and K. JANIAK. "ChemInform Abstract: Reactive Ion Etching (RIE) of InP/InAlGaAs/InGaAs Heterostructures." ChemInform 28, no. 52 (2010): no. http://dx.doi.org/10.1002/chin.199752266.

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Pan, Wei, S. B. Desu, In K. Yoo, and Dilip P. Vijay. "Reactive ion etching of PbZr1−x TixO3 and RuO2 films by environmentally safe gases." Journal of Materials Research 9, no. 11 (1994): 2976–80. http://dx.doi.org/10.1557/jmr.1994.2976.

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A new process for the reactive ion etching (RIE) of both PbZr1−x TixO3 (PZT) thin films and RuO2 electrodes is presented, employing etching gases with low ozone depletion potential (ODP) and global warming potential (GWP). The etching process has been investigated as a function of etching time, discharge power density, chamber pressure, and additive gas. Etch rates were in the range of 250–650 Å/min and 100–400 Å/min for PZT and RuO2, respectively. A large etch selectivity between PZT and RuO2 was optimized. Etched surfaces exhibited smooth morphologies. Furthermore, the ferroelectric properti

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Lawrowski, Robert Damian, Christian Prommesberger, Christoph Langer, Florian Dams, and Rupert Schreiner. "Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching." Advances in Materials Science and Engineering 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/948708.

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The homogeneity of emitters is very important for the performance of field emission (FE) devices. Reactive-ion etching (RIE) and oxidation have significant influences on the geometry of silicon tips. The RIE influences mainly the anisotropy of the emitters. Pressure has a strong impact on the anisotropic factor. Reducing the pressure results in a higher anisotropy, but the etch rate is also lower. A longer time of etching compensates this effect. Furthermore an improvement of homogeneity was observed. The impact of uprating is quite low for the anisotropic factor, but significant for the homog

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Chou, Wen Chen, Choung Lii Chao, Wei Haw Fan, and Kung Jeng Ma. "Research on Fabricating CVD Diamond Microstructures Using RIE Process." Key Engineering Materials 407-408 (February 2009): 41–44. http://dx.doi.org/10.4028/www.scientific.net/kem.407-408.41.

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Diamond is one of the most important engineering materials for its extreme hardness, high thermal conductivity value and chemical inertness. Due to its high hardness and strength, it can be ideal candidates for AFM probe or micro-needle. In this research, micro cone-like shaped diamond tips with high aspect ratio formed using reactive ion etching (RIE) method. The scanning electron microscope (SEM), transmission electron microscope (TEM) and micro-Raman spectroscopy were used to study the surface morphology and sub-surface micro-structure before and after RIE process. The results showed that g

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Kong, Dae Young, Chan Seob Cho, Jun Hwan Jo, Bong Hwan Kim, and Jong Hyun Lee. "Surface Texturing for Crystalline Silicon Solar Cell Using RIE Equipped with Metal-Mesh." Advanced Materials Research 328-330 (September 2011): 747–50. http://dx.doi.org/10.4028/www.scientific.net/amr.328-330.747.

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Surface texturing is an important process to enhance light absorption and to improve efficiency of a solar cell. Reactive ion etching (RIE) process is a very effective process and low-cost process, which is applicable during the dry etching processes for thin crystalline silicon solar cells with large areas. In this study, we studied a dry and free mask texturing process on crystalline silicon wafer using SF6/O2plasmas and metal mesh in a RIE system, with special attention to the effect of the metal mesh and RIE conditions on the texture of the silicon surface. In particular, we have found an

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Gu, Qiong Chan, Xiao Xiao Jiang, Jiang Tao Lv, and Guang Yuan Si. "Interference Lithography Patterned Nanogratings in LiNbO₃ Fabricated by Dry Etching." Advanced Materials Research 1049-1050 (October 2014): 7–10. http://dx.doi.org/10.4028/www.scientific.net/amr.1049-1050.7.

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Channel waveguides have been fabricated in x-cut lithium niobate (LiNbO3) by proton exchange (PE) method and optically measured. The thickness and the optical constants of the thin PE layer were characterized using a prism coupling technique. The PE area was plasma etched and a 2.775-μm total etching depth was achieved. The measured average etching rate is 92.5 nm/min. One-and two-dimensional dense arrays of LiNbO3 nanostructures have also been fabricated by using interference lithography (IL) and inductively coupled plasma reactive ion etching (ICP-RIE) techniques.Intorduction

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SI, G. Y., A. J. DANNER, J. H. TENG, S. S. ANG, A. B. CHEW, and E. DOGHECHE. "NANOSCALE ARRAYS IN LITHIUM NIOBATE FABRICATED BY INTERFERENCE LITHOGRAPHY AND DRY ETCHING." International Journal of Nanoscience 09, no. 04 (2010): 311–15. http://dx.doi.org/10.1142/s0219581x10006867.

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Channel waveguides have been fabricated in x-cut lithium niobate (LiNbO3) by proton exchange (PE) method and optically measured. The thickness and the optical constants of the thin PE layer were characterized using a prism coupling technique. The PE area was plasma etched and a 2.775-μm total etching depth was achieved. The measured average etching rate is 92.5 nm/min. One- and two-dimensional dense arrays of LiNbO3 nanostructures have also been fabricated by using interference lithography (IL) and inductively coupled plasma reactive ion etching (ICP-RIE) techniques.

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Inns, Daniel, Patrick Campbell, and Kylie Catchpole. "Wafer Surface Charge Reversal as a Method of Simplifying Nanosphere Lithography for Reactive Ion Etch Texturing of Solar Cells." Advances in OptoElectronics 2007 (July 31, 2007): 1–4. http://dx.doi.org/10.1155/2007/32707.

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A simplified nanosphere lithography process has been developed which allows fast and low-waste maskings of Si surfaces for subsequent reactive ion etching (RIE) texturing. Initially, a positive surface charge is applied to a wafer surface by dipping in a solution of aluminum nitrate. Dipping the positive-coated wafer into a solution of negatively charged silica beads (nanospheres) results in the spheres becoming electrostatically attracted to the wafer surface. These nanospheres form an etch mask for RIE. After RIE texturing, the reflection of the surface is reduced as effectively as any other

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Liu, Shang Xian, Ming Gang Wang, and Yang Xia. "Etching of Magnetic Materials Using Ar-CO/NH₃ in a Reactive Ion Etching System." Advanced Materials Research 900 (February 2014): 643–46. http://dx.doi.org/10.4028/www.scientific.net/amr.900.643.

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A new automatic RIE etching system has been developed. Multi-layers of magnetic materials were fabricated using this system. We compared the process of using conventional Ar gas plasma and the process using CO/NH3gas plasma. Then by combining the two processes, we achieved smooth surface and good uniformity with a good selectivity to photoresist mask. And few of corrosions appeared at the sidewall of trench. Additionally, the etching process could stop exactly at the stop layer. The whole processes ran at a chamber without control of temperature, pressure and end point detection.

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Barzen, Lars, Johannes Richter, Henning Fouckhardt, Michael Wahl, and Michael Kopnarski. "Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment." Applied Surface Science 328 (February 2015): 120–24. http://dx.doi.org/10.1016/j.apsusc.2014.12.038.

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Yoo, Jinsu. "Reactive ion etching (RIE) technique for application in crystalline silicon solar cells." Solar Energy 84, no. 4 (2010): 730–34. http://dx.doi.org/10.1016/j.solener.2010.01.031.

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Muhida, Rifki, Md Mamudur Rahman, Md Sazzad Hossein Chowdhury, et al. "Theoretical Study of Atomic Level Understanding of the Reactive Ion Etching (RIE)." Journal of Computational and Theoretical Nanoscience 9, no. 8 (2012): 1067–69. http://dx.doi.org/10.1166/jctn.2012.2144.

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Yoo, Jinsu, Gwonjong Yu, and Junsin Yi. "Large-area multicrystalline silicon solar cell fabrication using reactive ion etching (RIE)." Solar Energy Materials and Solar Cells 95, no. 1 (2011): 2–6. http://dx.doi.org/10.1016/j.solmat.2010.03.029.

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Golobokova, Lyudmila S., Yuri V. Nastaushev, Alexander B. Talochkin, T. A. Gavrilova, Fedor N. Dultsev, and Alexander V. Latyshev. "Resonant Reflectance in Silicon Nanorods Arrays." Solid State Phenomena 245 (October 2015): 8–13. http://dx.doi.org/10.4028/www.scientific.net/ssp.245.8.

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The optical properties of ordered arrays of silicon nanorods (Si NRs) were investigated. Electron Beam Lithography followed by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) was used for Si NRs fabrication. Si NRs were chemically and electrically passivated through the deposition of TiONx nanolayer. Tunable color generation from vertical silicon nanorods is demonstrated too.

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Ruby, Douglas S., Saleem Zaidi, S. Narayanan, Satoshi Yamanaka, and Ruben Balanga. "RIE-Texturing of Industrial Multicrystalline Silicon Solar Cells." Journal of Solar Energy Engineering 127, no. 1 (2005): 146–49. http://dx.doi.org/10.1115/1.1756926.

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We developed a maskless plasma texturing technique for multicrystalline Si (mc-Si) cells using Reactive Ion Etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while keeping front reflectance to low levels. Internal quantum efficiencies higher than those on planar and wet-textured cells have been obtained, boosting cell currents and efficiencies by up to 6% on tricrystalline Si cells.

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Shul, R. J., G. A. Vawter, C. G. Willison, et al. "Comparison Of Dry-Etch Techniques For Gan, Inn, And Ain." MRS Proceedings 483 (1997). http://dx.doi.org/10.1557/proc-483-103.

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AbstractFabrication of group-III nitride devices relies on the ability to pattern features to depths ranging from ∼1000 Å to > 5 μm with anisotropic profiles, smooth morphologies, selective etching of one material over another, and a low degree of plasma-induced damage. In this study, GaN etch rates and etch profiles are compared using reactive ion etch (RIE), reactive ion beam etching (RIBE), electron cyclotron resonance (ECR), and inductively coupled plasma (ICP) etch systems. RIE yielded the slowest etch rates and sloped etch profiles despite dc-biases > −900 V. ECR and ICP etching yi

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Karouta, F., B. Jacobs, I. Moerman, et al. "Highly Chemical Reactive Ion Etching of Gallium Nitride." MRS Proceedings 595 (1999). http://dx.doi.org/10.1557/proc-595-f99w11.76.

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Abstract: A highly chemical reactive ion etching process has been developed for MOVPE-grown GaN on sapphire. The key element for the enhancement of the chemical property during etching is the use of a fluorine containing gas in a chlorine based chemistry. In the perspective of using GaN substrates for homo-epitaxy of high quality GaN/AlGaN structures we have used the above described RIE process to smoothen Ga-polar GaN substrates. The RMS value, measured by AFM, went from 20 Å (after mechanical polishing) down to 4 Å after 6 minutes of RIE. Etching N-polar GaN resulted in a higher etch rate th

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