Relevant bibliographies by topics / Reactive sputter deposition

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
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Academic literature on the topic 'Reactive sputter deposition'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Reactive sputter deposition"

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Westwood, W. D. "Sputter Deposition Processes." MRS Bulletin 13, no. 12 (December 1988): 46–51. http://dx.doi.org/10.1557/s0883769400063697.

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Deposition of films by sputtering was observed first in 1852 by Grove. The technique was in general use through the 1920s for preparing reflective coatings and other thin film samples. Western Electric deposited gold on wax masters for phonograph recordings. The improvement in diffusion pump technology at that time caused thermal evaporation deposition to replace sputtering.Not till the 1950s did sputter deposition reappear… Bell Laboratories developed tantalum hybrid circuit technology using sputter deposition. Besides depositing Ta, they created a new material, Ta2N, by reactively sputtering tantalum in gas mixtures of argon and N2. Since then, these two methods, sputtering of metals and alloys and reactive sputtering of compounds, have been investigated for many applications of thin film materials.Although the general aspects of the methods have changed little in the past 30 years, the implementations have changed significantly, particularly since the introduction of magnetron systems in the 1970s. This review will concentrate mainly on these flexible, high rate magnetron deposition systems.The term sputtering actually applies to the physical processes by which atoms are removed from a material. Momentum is transferred from an incident, energetic particle, usually in the form of an ion, to atoms of the target material. A large number of these atoms are displaced from their normal sites in the crystal lattice, producing a disordered structure that also contains some of the incident particles, which are implanted. Some of the target atoms are displaced from the surface; if they have enough energy, they escape from the target as sputtered atoms.
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Dannenberg, Rand, and Phil Greene. "Reactive sputter deposition of titanium dioxide." Thin Solid Films 360, no. 1-2 (February 2000): 122–27. http://dx.doi.org/10.1016/s0040-6090(99)00938-4.

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Gerdes, H., R. Bandorf, D. Loch, and G. Bräuer. "Reactive Sputter Deposition of Alumina Coatings." IOP Conference Series: Materials Science and Engineering 39 (September 11, 2012): 012009. http://dx.doi.org/10.1088/1757-899x/39/1/012009.

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Aita, Carolyn Rubin. "Reactive sputter deposition of metal oxide nanolaminates." Journal of Physics: Condensed Matter 20, no. 26 (June 9, 2008): 264006. http://dx.doi.org/10.1088/0953-8984/20/26/264006.

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Voevodin, A. A., P. Stevenson, C. Rebholz, J. M. Schneider, and A. Matthews. "Active process control of reactive sputter deposition." Vacuum 46, no. 7 (July 1995): 723–29. http://dx.doi.org/10.1016/0042-207x(94)00090-5.

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Pakala, Mahendra, and Ray Y. Lin. "Reactive sputter deposition of chromium nitride coatings." Surface and Coatings Technology 81, no. 2-3 (June 1996): 233–39. http://dx.doi.org/10.1016/0257-8972(95)02488-3.

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Jankowski, A. F., and J. P. Hayes. "Reactive sputter deposition of yttria-stabilized zirconia." Surface and Coatings Technology 76-77 (November 1995): 126–31. http://dx.doi.org/10.1016/0257-8972(95)02525-1.

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Guo, Q. X., Y. Okazaki, Y. Kume, T. Tanaka, M. Nishio, and H. Ogawa. "Reactive sputter deposition of AlInN thin films." Journal of Crystal Growth 300, no. 1 (March 2007): 151–54. http://dx.doi.org/10.1016/j.jcrysgro.2006.11.007.

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Jones, Fletcher. "High‐rate reactive sputter deposition of zirconium dioxide." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6, no. 6 (November 1988): 3088–97. http://dx.doi.org/10.1116/1.575479.

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Jones, Fletcher, and Joseph Logan. "High‐rate reactive sputter deposition of aluminum oxide." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7, no. 3 (May 1989): 1240–47. http://dx.doi.org/10.1116/1.576262.

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Dissertations / Theses on the topic "Reactive sputter deposition"

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Liljeholm, Lina. "Reactive Sputter Deposition of Functional Thin Films." Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-175666.

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Thin film technology is of great significance for a variety of products, such as electronics, anti-reflective or hard coatings, sensors, solar cells, etc. This thesis concerns the synthesis of thin functional films, reactive magnetron sputter deposition process as such and the physical and functional characterization of the thin films synthesized. Characteristic for reactive sputtering processes is the hysteresis due to the target poisoning. One particular finding in this work is the elimination of the hysteresis by means of a mixed nitrogen/oxygen processing environment for dual sputtering of Alumina-Zirconia thin films. For a constant moderate flow of nitrogen, the hysteresis could be eliminated without significant incorporation of nitrogen in the films. It is concluded that optimum processing conditions for films of a desired composition can readily be estimated by modeling. The work on reactively sputtered SiO2–TiO2 thin films provides guidelines as to the choice of process parameters in view of the application in mind, by demonstrating that it is possible to tune the refractive index by using single composite Six/TiO2 targets with the right composition and operating in a suitable oxygen flow range. The influence of the target composition on the sputter yield is studied for reactively sputtered titanium oxide films. It is shown that by using sub-stoichiometric targets with the right composition and operating in the proper oxygen flow range, it is possible to increase the sputter rate and still obtain stoichiometric coatings. Wurtzite aluminum nitride (w-AlN) thin films are of great interest for electro-acoustic applications and their properties have in recent years been extensively studied. One way to tailor material properties is to vary the composition by adding other elements. Within this thesis (Al,B)N films of the wurtzite structure and a strong c-axis texture have been grown by reactive sputter deposition. Nanoindentation experiments show that the films have nanoindentation hardness in excess of 30 GPa, which is as hard as commercially available hard coatings such as TiN. Electrical properties of w-(Al,B)N thin films were investigated. W-(Al,B)N thin films are found to have a dielectric strength of ~3×106 V/cm, a relatively high k-value around 12 and conduction mechanisms similar to those of AlN. These results serve as basis for further research and applications of w-(Al,B)N thin films. An AlN thin film bulk acoustic resonator (FBAR) and a solidly mounted resonator (SMR) together with a microfluidic transport system have been fabricated. The fabrication process is IC compatible and uses reactive sputtering to deposit piezoelectric AlN thin films with a non-zero mean inclination of the c-axis, which allows in-liquid operation through the excitation of the shear mode. The results on IC-compatibility, Q-values, operation frequency and resolution illustrate the potential of this technology for highly sensitive low-cost micro-biosensor systems for applications in, e.g. point-of-care testing.
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Wang, Yimin. "Reactive Sputter Deposition of Molybdenum Nitride Thin Films." University of Cincinnati / OhioLINK, 2002. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1025108562.

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Tungasmita, Sukkaneste. "Growth of wide-band gap AIN and (SiC)x(AIN)₁₋x thin films by reactive magnetron sputter deposition /." Linköping : Univ, 2001. http://www.bibl.liu.se/liupubl/disp/disp2001/tek711s.pdf.

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Höglund, Carina. "Reactive Magnetron Sputter Deposition and Characterization of Thin Films from the Ti-Al-N and Sc-Al-N Systems." Licentiate thesis, Linköping University, Linköping University, Thin Film Physics, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-17683.

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This Thesis treats the growth and characterization of ternary transition metal nitride thin films. The aim is to probe deeper into the Ti-Al-N system and to explore the novel Sc-Al-N system. Thin films were epitaxially grown by reactive magnetron sputtering from elemental targets onto single-crystal substrates covered with a seed layer. Elastic recoil detection analysis and Rutherford backscattering spectroscopy were used for compositional analysis and depth profiling. Different x-ray diffraction techniques were employed, ex situ using Cu radiation and in situ during deposition using synchrotron radiation, to identify phases, to obtain information about texture, and to determine the thickness and roughness evolution of layers during and after growth. Transmission electron microscopy was used for overview and lattice imaging, and to obtain lattice structure information by electron diffraction. Film properties were determined using van der Pauw measurements of the electrical resistivity, and nanoindentation for the materials hardness and elastic modulus. The epitaxial Mn+1AXn phase Ti2AlN was synthesized by solid-state reaction during interdiffusion between sequentially deposited layers of (0001)-oriented AlN and Ti thin films. When annealing the sample, N and Al diffused into the Ti, forming Ti3AlN at 400 ºC and Ti2AlN at 500 ºC. The Ti2AlN formation temperature is 175 ºC lower than earlier reported results. Ti4AlN3 thin films were, however, not possible to synthesize when depositing films with a Ti:Al:N ratios of 4:1:3. Substrate temperatures at 600 ºC yielded an irregularly stacked Tin+1AlNn layered structure because of the low mobility of Al adatoms. An increased temperature led, however, to an Al deficiency due to an out diffusion of Al atoms, and formation of Ti2AlN phase and Ti1-xAlxN cubic solid solution. In the Sc-Al-N system the first ternary phase was discovered, namely the perovskite Sc3AlN, with a unit cell of 4.40 Å. Its existence was supported by ab initio calculations of the enthalpy showing that Sc3AlN is thermodynamically stable with respect to the binaries. Sc3AlN thin films were experimentally found to have a hardness of 14.2 GPa, an elastic modulus of 21 GPa, and a room temperature resistivity of 41.2 μΩcm.

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Carpenter, Stephen David. "The effect on TiN dispersoids formed by a reactive magnetron sputtered deposition route on the reheat characteristics of Pet." Thesis, Manchester Metropolitan University, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.532018.

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Stefanov, Bozhidar. "Photocatalytic TiO2 thin films for air cleaning : Effect of facet orientation, chemical functionalization, and reaction conditions." Doctoral thesis, Uppsala universitet, Fasta tillståndets fysik, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-265056.

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Poor indoor air quality is a source of adverse health effects. TiO2 coatings deposited on well-illuminated surfaces, such as window panes, can be used to fully mineralize indoor air pollutants by photocatalysis. In such applications it is important to ensure stable photocatalytic activity for a wide range of operating conditions, such as relative humidity and temperature, and to avoid deactivation of the catalyst. In this thesis photocatalytic removal of the indoor-pollutant acetaldehyde (CH3CHO) on nanostructured TiO2 films is investigated, and in particular it is proposed how such films can be modified and operated for maximum performance. Catalyst deactivation can be reduced by purposefully changing the surface acidity of TiO2 by covalently attaching SO4 to the surface. Moreover, the overall photocatalytic activity on anatase TiO2 films can be improved by increasing the fraction of exposed reactive {001} surfaces, which otherwise are dominated by {101} surfaces. In the first part of the thesis mode-resolved in-situ FTIR is used to elucidate the reaction kinetics of CH3CHO adsorption and photo-oxidation on the TiO2 and SO4 – modified TiO2 surfaces. Surface concentrations of main products and corresponding reaction rates were determined. Formate is the major reaction product, whose further oxidation limits the complete oxidation to gaseous species, and is responsible for photocatalyst deactivation by site inhibition. The oxidation reaction is characterized by two reaction pathways, which are associated with two types of surface reaction sites. On the sulfate modified TiO2 catalyst fewer intermediates are accumulated, and this catalyst resists deactivation much better than pure TiO2. A hitherto unknown intermediate – surface-bound acetaldehyde dimer with an adsorption band at 1643 cm−1 was discovered, using interplay between FTIR spectroscopy and DFT calculations. The second part of the thesis treats the effect of increasing the relative abundance of exposed {001} facets on the photocatalytic activity of anatase TiO2 films prepared by DC magnetron sputtering. A positive effect was observed both for liquid-phase photo-oxidation of methylene blue, and for gas-phase photocatalytic removal of CH3CHO. In both cases it was found that the exposed {001} surfaces were an order of magnitude more reactive, compared to the {101} ones. Furthermore, it was found that the reactive films were more resilient towards deactivation, and exhibited almost unchanged activity under varying reaction conditions. Finally, a synergetic effect of SO4 – modification and high fraction of exposed {001} surfaces was found, yielding photocatalysts with sustained high activity. The results presented here for facet controlled and chemically modified TiO2 films are of interest for applications in the built environment for indoor air purification and as self-cleaning surfaces.
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Zschintzsch-Dias, Manuel. "Self organized formation of Ge nanocrystals in multilayers." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2012. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-86838.

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The aim of this work is to create a process which allows the tailored growth of Ge nanocrystals for use in photovoltic applications. The multilayer systems used here provide a reliable method to control the Ge nanocrystal size after phase separation. In this thesis, the deposition of GeOx/SiO2 and Ge:SiOx~ 2/SiO2 multilayers via reactive dc magnetron sputtering and the self-ordered Ge nanocrystal formation within the GeOx and Ge:SiOx~ 2 sublayers during subsequent annealing is investigated. Mostly the focus of this work is on the determination of the proper deposition conditions for tuning the composition of the systems investigated. For the GeOx/SiO2 multilayers this involves changing the GeOx composition between elemental Ge (x = 0) and GeO2 (x = 2), whereas for the Ge:SiOx~ 2/SiO2 multilayers this involves changing the stoichiometry of the Ge:SiOx~ 2 sublayers in the vicinity of stochiometric silica (x = 2). The deposition conditions are controlled by the variation of the deposition rate, the deposition temperature and the oxygen partial pressure. A convenient process window has been found which allows the sequential deposition of GeOx/SiO2 or Ge:SiOx ~2/SiO2 without changing the oxygen partial pressure during deposition. For stoichiometry determination Rutherford back-scattering spectrometry has been applied extensively. The phase separation in the spatially confined GeOx and Ge:SiOx ~2 sublayers was investigated by X-ray absorption spectroscopy at the Ge K-edge. The Ge sub-oxides content of the as-deposited multilayers diminishes with increasing annealing temperature, showing complete phase separation at approximately 450° C for both systems (using inert N2 at ambient pressure). With the use of chemical reducing H2 in the annealing atmosphere, the temperature regime where the GeOx phase separation occurs is lowered by approximately 100 °C. At temperatures above 400° C the sublayer composition, and thus the density of the Ge nanocrystals, can be altered by making use of the reduction of GeO2 by H2. The Ge nanocrystal formation after subsequent annealing was investigated with X-ray scattering, Raman spectroscopy and electron microscopy. By these methods the existence of 2 - 5 nm Ge nanocrystals at annealing temperatures of 550 (GeOx) - 700° C (Ge:SiOx ~2) has been confirmed which is within the multilayer stability range. The technique used allows the production of extended multilayer stacks (50 periods ~ 300 nm) with very smooth interfaces (roughness ~ 0.5 nm). Thus it was possible to produce Ge nanocrystal layers with ultra-thin SiO2 separation layers (thickness ~ 1 nm) which offers interesting possibilities for charge transport via direct tunneling.
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Kappertz, Oliver [Verfasser]. "Atomistic effects in reactive direct current sputter deposition / vorgelegt von Oliver Kappertz." 2003. http://d-nb.info/970934750/34.

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Chen, Jyun-Wei, and 陳鈞瑋. "Nitrogen doped p-type ZnO prepared by reactive ion beam sputter deposition." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/8mh8zh.

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碩士
國立臺灣科技大學
電子工程系
99
Nitrogen doped ZnO thin films have been prepared by reactive ion beam sputter deposition on quartz and glass substrates at 300?aC utilizing un-doped ZnO buffer layers. Experimental results show that with a nitrogen flow rate of 5 sccm and 0.5 sccm, the (002) diffraction peak of ZnO:N shifts to lower angles and exhibit preferred orientation along the c-axis, indicating the replacement of oxygen by molecular nitrogen and atomic nitrogen. Raman spectroscopy analysis shows three peaks at 275、436、582 cm-1, indicating the incorporation of nitrogen into ZnO. Post-growth annealing at 500?aC for three minutes results in the strongest 582 cm-1 peak intensity. Annealing at higher temperature reduces the 582 cm-1 peak intensity while improving the 436 cm-1 peak intensity, indicating out-diffusion of nitrogen and improved ZnO crystalline quality. Hall measurement shows that p-type ZnO was obtained utilizing 0.5 sccm nitrogen flow rate. Annealing at 500?aC for three minutes results in the highest hole concentration of 2*1017/cm3 with a mobility of 3-55 cm2V-1s-1. ZnO:N deposited at 2 and 5 sccm exhibit n-type, which is due to the formation of (N2)O.
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Liau, Chung-Chi, and 廖重期. "Characterization of Er-doped ZnO prepared by reactive ion beam sputter deposition." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/5wtc45.

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博士
國立臺灣科技大學
電子工程系
99
Er-doped ZnO (Er:ZnO) thin films were prepared by dual beam reactive ion beam sputter deposition. Er:ZnO with Er concentration from 0.1 to 3.6 at.% was achieved by adjusting Er target ion beam current. All Er:ZnO shows characteristic Er3+ inner shell 4f transition at 1.0 (4I11/2 → 4I15/2) and 1.54 ?慆 (4I13/2 → 4I15/2). The 1.54 ?慆 emission is of special interests that the attenuation in silica optical fiber is the lowest. Er:ZnO with Er concentration at 0.5 at.% shows the strongest 1.54 ?慆 emission after annealing in oxygen ambient for 10 minutes. XPS analysis shows that as the amount of oxygen atoms located in oxygen deficient ZnO matrixes decreases, the 1.54 ?慆 emission increases. Electrical property measurement shows that highest electron concentration of 2.3 × 1019 cm-3 and lowest resistivity of 0.2 Ω?泌m can be achieved with an Er concentration of 1.1 at. %. ZnO/Si hetro-junction was fabricated using Er:ZnO on p-Si (100). The threshold voltage is 3.5 V and the reverse current under reverse bias of -20 V is 30 ?嫀.
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Books on the topic "Reactive sputter deposition"

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Depla, Diederik, and Stijn Mahieu, eds. Reactive Sputter Deposition. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-76664-3.

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(Stijn), Mahieu S., and SpringerLink (Online service), eds. Reactive Sputter Deposition. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg, 2008.

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Depla, Diederik, and Stijn Mahieu. Reactive Sputter Deposition. Springer, 2010.

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Olsson, Maryam Kharrazi. High-Rate Reactive Magnetron Sputter Deposition and Characterization of Metal Oxide Films. Uppsala Universitet, 2000.

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Book chapters on the topic "Reactive sputter deposition"

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Ono, Tadayoshi, Takahiro Kenmotsu, and Tetsuya Muramoto. "Simulation of the Sputtering Process." In Reactive Sputter Deposition, 1–42. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-76664-3_1.

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Kupfer, H., and F. Richter. "Reactive Magnetron Sputtering of Indium Tin Oxide Thin Films: The Cross-Corner and Cross-Magnetron Effect." In Reactive Sputter Deposition, 337–66. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-76664-3_10.

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Briois, Pascal, Frédéric Lapostolle, and Alain Billard. "Reactively Sputter-Deposited Solid Electrolytes and Their Applications." In Reactive Sputter Deposition, 367–411. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-76664-3_11.

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Banerjee, Arghya N., and Kalyan K. Chattopadhyay. "Reactive SputteredWide-Bandgap p-Type Semiconducting Spinel AB2O4 and Delafossite ABO2 Thin Films for “Transparent Electronics”." In Reactive Sputter Deposition, 413–84. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-76664-3_12.

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Granqvist, C. G. "Oxide-Based Electrochromic Materials and Devices Prepared by Magnetron Sputtering." In Reactive Sputter Deposition, 485–95. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-76664-3_13.

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Wadley, Haydn, Xiaowang Zhou, and William H. Butler. "Atomic Assembly of Magnetoresistive Multilayers." In Reactive Sputter Deposition, 497–559. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-76664-3_14.

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Baragiola, R. A., and Pierfrancesco Riccardi. "Electron Emission from Surfaces Induced by Slow Ions and Atoms." In Reactive Sputter Deposition, 43–60. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-76664-3_2.

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Bogaerts, Annemie, Ivan Kolev, and Guy Buyle. "Modeling of the Magnetron Discharge." In Reactive Sputter Deposition, 61–130. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-76664-3_3.

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Berg, Sören, Tomas Nyberg, and Tomas Kubart. "Modelling of Reactive Sputtering Processes." In Reactive Sputter Deposition, 131–52. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-76664-3_4.

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Depla, Diederik, Stijn Mahieu, and Roger De Gryse. "Depositing Aluminium Oxide: A Case Study of Reactive Magnetron Sputtering." In Reactive Sputter Deposition, 153–97. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-76664-3_5.

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Conference papers on the topic "Reactive sputter deposition"

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Pelleymounter, Doug R. "Raising the Bar on Reactive Deposition Sputter Rates." In Society of Vacuum Coaters Annual Technical Conference. Society of Vacuum Coaters, 2015. http://dx.doi.org/10.14332/svc15.proc.1956.

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"High-Rate Reactive High-Power Impulse Magnetron Sputter Deposition: Principles and Applications." In SVC TechCon 2016. Society of Vacuum Coaters, 2016. http://dx.doi.org/10.14332/svc16.proc.0006.

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Pond, Bradley J., Tu Du, J. Sobczak, Charles K. Carniglia, and Forrest L. Williams. "Low-pressure reactive dc-magnetron sputter deposition of metal-oxide thin films." In Laser-Induced Damage in Optical Materials: 1991, edited by Harold E. Bennett, Lloyd L. Chase, Arthur H. Guenther, Brian E. Newnam, and M. J. Soileau. SPIE, 1992. http://dx.doi.org/10.1117/12.60124.

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Frach, Peter, Hagen Bartzsch, Joern Weber, Joern-Steffen Liebig, and Volker Kirchhoff. "Stationary and In-line Reactive Magnetron Sputter Technologies for Deposition of Optical Coatings." In Optical Interference Coatings. Washington, D.C.: OSA, 2007. http://dx.doi.org/10.1364/oic.2007.ma6.

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Ida, Michel, Patrick Chaton, and B. Rafin. "Control of silicon oxynitrides refractive index by reactive-assisted ion beam sputter deposition." In 1994 International Symposium on Optical Interference Coatings, edited by Florin Abeles. SPIE, 1994. http://dx.doi.org/10.1117/12.192113.

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"DC-Dual-Anode Reactive Sputter Deposition of Transparent Dielectrics with Low Substrate Heating." In SVC TechCon 2016. Society of Vacuum Coaters, 2016. http://dx.doi.org/10.14332/svc16.proc.0054.

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Xinyu Zhang, Andres Cuevas, and Andrew Thomson. "Process control of reactive sputter deposition of AlOx and improved surface passivation of crystalline silicon." In 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2. IEEE, 2012. http://dx.doi.org/10.1109/pvsc-vol2.2012.6656799.

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Xinyu Zhang, Andres Cuevas, and Andrew Thomson. "Process control of reactive sputter deposition of AlOx and improved surface passivation of crystalline silicon." In 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2. IEEE, 2013. http://dx.doi.org/10.1109/pvsc-vol2.2013.6656799.

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Lu, Junqing. "Numerical estimates of metal atom energy in reactive sputter deposition of TiN and TaN thin films." In THE 6TH INTERNATIONAL CONFERENCE ON SCIENCE & ENGINEERING IN MATHEMATICS, CHEMISTRY AND PHYSICS: ScieTech18: The Nature Math - The Science. Author(s), 2018. http://dx.doi.org/10.1063/1.5080020.

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Yun, Sun Jin, Jung Wook Lim, Byung-Gyu Chae, and Hyun-Tak Kim. "Vanadium Dioxide Films Deposited on SiO2- and Al2O3-coated Si Substrates Using Reactive RF-Magnetron Sputter Deposition Technique." In 2007 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2007. http://dx.doi.org/10.7567/ssdm.2007.p-8-3.

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Reports on the topic "Reactive sputter deposition"

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Jankowski, A. F., J. P. Hayes, M. A. McKernan, and D. M. Makowiecki. Reactive sputter deposition of boron nitride. Office of Scientific and Technical Information (OSTI), October 1995. http://dx.doi.org/10.2172/212540.

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You might also be interested in the extended bibliographies on the topic 'Reactive sputter deposition' for particular source types:
Journal articles Dissertations / Theses
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