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1
Liljeholm, Lina. "Reactive Sputter Deposition of Functional Thin Films." Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-175666.
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Thin film technology is of great significance for a variety of products, such as electronics, anti-reflective or hard coatings, sensors, solar cells, etc. This thesis concerns the synthesis of thin functional films, reactive magnetron sputter deposition process as such and the physical and functional characterization of the thin films synthesized. Characteristic for reactive sputtering processes is the hysteresis due to the target poisoning. One particular finding in this work is the elimination of the hysteresis by means of a mixed nitrogen/oxygen processing environment for dual sputtering of Alumina-Zirconia thin films. For a constant moderate flow of nitrogen, the hysteresis could be eliminated without significant incorporation of nitrogen in the films. It is concluded that optimum processing conditions for films of a desired composition can readily be estimated by modeling. The work on reactively sputtered SiO2–TiO2 thin films provides guidelines as to the choice of process parameters in view of the application in mind, by demonstrating that it is possible to tune the refractive index by using single composite Six/TiO2 targets with the right composition and operating in a suitable oxygen flow range. The influence of the target composition on the sputter yield is studied for reactively sputtered titanium oxide films. It is shown that by using sub-stoichiometric targets with the right composition and operating in the proper oxygen flow range, it is possible to increase the sputter rate and still obtain stoichiometric coatings. Wurtzite aluminum nitride (w-AlN) thin films are of great interest for electro-acoustic applications and their properties have in recent years been extensively studied. One way to tailor material properties is to vary the composition by adding other elements. Within this thesis (Al,B)N films of the wurtzite structure and a strong c-axis texture have been grown by reactive sputter deposition. Nanoindentation experiments show that the films have nanoindentation hardness in excess of 30 GPa, which is as hard as commercially available hard coatings such as TiN. Electrical properties of w-(Al,B)N thin films were investigated. W-(Al,B)N thin films are found to have a dielectric strength of ~3×106 V/cm, a relatively high k-value around 12 and conduction mechanisms similar to those of AlN. These results serve as basis for further research and applications of w-(Al,B)N thin films. An AlN thin film bulk acoustic resonator (FBAR) and a solidly mounted resonator (SMR) together with a microfluidic transport system have been fabricated. The fabrication process is IC compatible and uses reactive sputtering to deposit piezoelectric AlN thin films with a non-zero mean inclination of the c-axis, which allows in-liquid operation through the excitation of the shear mode. The results on IC-compatibility, Q-values, operation frequency and resolution illustrate the potential of this technology for highly sensitive low-cost micro-biosensor systems for applications in, e.g. point-of-care testing.
2
Wang, Yimin. "Reactive Sputter Deposition of Molybdenum Nitride Thin Films." University of Cincinnati / OhioLINK, 2002. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1025108562.
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Tungasmita, Sukkaneste. "Growth of wide-band gap AIN and (SiC)x(AIN)₁₋x thin films by reactive magnetron sputter deposition /." Linköping : Univ, 2001. http://www.bibl.liu.se/liupubl/disp/disp2001/tek711s.pdf.
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Höglund, Carina. "Reactive Magnetron Sputter Deposition and Characterization of Thin Films from the Ti-Al-N and Sc-Al-N Systems." Licentiate thesis, Linköping University, Linköping University, Thin Film Physics, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-17683.
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This Thesis treats the growth and characterization of ternary transition metal nitride thin films. The aim is to probe deeper into the Ti-Al-N system and to explore the novel Sc-Al-N system. Thin films were epitaxially grown by reactive magnetron sputtering from elemental targets onto single-crystal substrates covered with a seed layer. Elastic recoil detection analysis and Rutherford backscattering spectroscopy were used for compositional analysis and depth profiling. Different x-ray diffraction techniques were employed, ex situ using Cu radiation and in situ during deposition using synchrotron radiation, to identify phases, to obtain information about texture, and to determine the thickness and roughness evolution of layers during and after growth. Transmission electron microscopy was used for overview and lattice imaging, and to obtain lattice structure information by electron diffraction. Film properties were determined using van der Pauw measurements of the electrical resistivity, and nanoindentation for the materials hardness and elastic modulus. The epitaxial Mn+1AXn phase Ti2AlN was synthesized by solid-state reaction during interdiffusion between sequentially deposited layers of (0001)-oriented AlN and Ti thin films. When annealing the sample, N and Al diffused into the Ti, forming Ti3AlN at 400 ºC and Ti2AlN at 500 ºC. The Ti2AlN formation temperature is 175 ºC lower than earlier reported results. Ti4AlN3 thin films were, however, not possible to synthesize when depositing films with a Ti:Al:N ratios of 4:1:3. Substrate temperatures at 600 ºC yielded an irregularly stacked Tin+1AlNn layered structure because of the low mobility of Al adatoms. An increased temperature led, however, to an Al deficiency due to an out diffusion of Al atoms, and formation of Ti2AlN phase and Ti1-xAlxN cubic solid solution. In the Sc-Al-N system the first ternary phase was discovered, namely the perovskite Sc3AlN, with a unit cell of 4.40 Å. Its existence was supported by ab initio calculations of the enthalpy showing that Sc3AlN is thermodynamically stable with respect to the binaries. Sc3AlN thin films were experimentally found to have a hardness of 14.2 GPa, an elastic modulus of 21 GPa, and a room temperature resistivity of 41.2 μΩcm.
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Carpenter, Stephen David. "The effect on TiN dispersoids formed by a reactive magnetron sputtered deposition route on the reheat characteristics of Pet." Thesis, Manchester Metropolitan University, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.532018.
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Stefanov, Bozhidar. "Photocatalytic TiO2 thin films for air cleaning : Effect of facet orientation, chemical functionalization, and reaction conditions." Doctoral thesis, Uppsala universitet, Fasta tillståndets fysik, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-265056.
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Poor indoor air quality is a source of adverse health effects. TiO2 coatings deposited on well-illuminated surfaces, such as window panes, can be used to fully mineralize indoor air pollutants by photocatalysis. In such applications it is important to ensure stable photocatalytic activity for a wide range of operating conditions, such as relative humidity and temperature, and to avoid deactivation of the catalyst. In this thesis photocatalytic removal of the indoor-pollutant acetaldehyde (CH3CHO) on nanostructured TiO2 films is investigated, and in particular it is proposed how such films can be modified and operated for maximum performance. Catalyst deactivation can be reduced by purposefully changing the surface acidity of TiO2 by covalently attaching SO4 to the surface. Moreover, the overall photocatalytic activity on anatase TiO2 films can be improved by increasing the fraction of exposed reactive {001} surfaces, which otherwise are dominated by {101} surfaces. In the first part of the thesis mode-resolved in-situ FTIR is used to elucidate the reaction kinetics of CH3CHO adsorption and photo-oxidation on the TiO2 and SO4 – modified TiO2 surfaces. Surface concentrations of main products and corresponding reaction rates were determined. Formate is the major reaction product, whose further oxidation limits the complete oxidation to gaseous species, and is responsible for photocatalyst deactivation by site inhibition. The oxidation reaction is characterized by two reaction pathways, which are associated with two types of surface reaction sites. On the sulfate modified TiO2 catalyst fewer intermediates are accumulated, and this catalyst resists deactivation much better than pure TiO2. A hitherto unknown intermediate – surface-bound acetaldehyde dimer with an adsorption band at 1643 cm−1 was discovered, using interplay between FTIR spectroscopy and DFT calculations. The second part of the thesis treats the effect of increasing the relative abundance of exposed {001} facets on the photocatalytic activity of anatase TiO2 films prepared by DC magnetron sputtering. A positive effect was observed both for liquid-phase photo-oxidation of methylene blue, and for gas-phase photocatalytic removal of CH3CHO. In both cases it was found that the exposed {001} surfaces were an order of magnitude more reactive, compared to the {101} ones. Furthermore, it was found that the reactive films were more resilient towards deactivation, and exhibited almost unchanged activity under varying reaction conditions. Finally, a synergetic effect of SO4 – modification and high fraction of exposed {001} surfaces was found, yielding photocatalysts with sustained high activity. The results presented here for facet controlled and chemically modified TiO2 films are of interest for applications in the built environment for indoor air purification and as self-cleaning surfaces.GRINDOOR
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Zschintzsch-Dias, Manuel. "Self organized formation of Ge nanocrystals in multilayers." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2012. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-86838.
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The aim of this work is to create a process which allows the tailored growth of Ge nanocrystals for use in photovoltic applications. The multilayer systems used here provide a reliable method to control the Ge nanocrystal size after phase separation.
In this thesis, the deposition of GeOx/SiO2 and Ge:SiOx~ 2/SiO2 multilayers via reactive dc magnetron sputtering and the self-ordered Ge nanocrystal formation within the GeOx and Ge:SiOx~ 2 sublayers during subsequent annealing is investigated.
Mostly the focus of this work is on the determination of the proper deposition conditions for tuning the composition of the systems investigated. For the GeOx/SiO2 multilayers this involves changing the GeOx composition between elemental Ge (x = 0) and GeO2 (x = 2), whereas for the Ge:SiOx~ 2/SiO2 multilayers this involves changing the stoichiometry of the Ge:SiOx~ 2 sublayers in the vicinity of stochiometric silica (x = 2). The deposition conditions are controlled by the variation of the deposition rate, the deposition temperature and the oxygen partial pressure.
A convenient process window has been found which allows the sequential deposition of GeOx/SiO2 or Ge:SiOx ~2/SiO2 without changing the oxygen partial pressure during deposition. For stoichiometry determination Rutherford back-scattering spectrometry has been applied extensively.
The phase separation in the spatially confined GeOx and Ge:SiOx ~2 sublayers was investigated by X-ray absorption spectroscopy at the Ge K-edge. The Ge sub-oxides content of the as-deposited multilayers diminishes with increasing annealing temperature, showing complete phase separation at approximately 450° C for both systems (using inert N2 at ambient pressure). With the use of chemical reducing H2 in the annealing atmosphere, the temperature regime where the GeOx phase separation occurs is lowered by approximately 100 °C. At temperatures above 400° C the sublayer composition, and thus the density of the Ge nanocrystals, can be altered by making use of the reduction of GeO2 by H2.
The Ge nanocrystal formation after subsequent annealing was investigated with X-ray scattering, Raman spectroscopy and electron microscopy. By these methods the existence of 2 - 5 nm Ge nanocrystals at annealing temperatures of 550 (GeOx) - 700° C (Ge:SiOx ~2) has been confirmed which is within the multilayer stability range.
The technique used allows the production of extended multilayer stacks (50 periods ~ 300 nm) with very smooth interfaces (roughness ~ 0.5 nm). Thus it was possible to produce Ge nanocrystal layers with ultra-thin SiO2 separation layers (thickness ~ 1 nm) which offers interesting possibilities for charge transport via direct tunneling.
8
Kappertz, Oliver [Verfasser]. "Atomistic effects in reactive direct current sputter deposition / vorgelegt von Oliver Kappertz." 2003. http://d-nb.info/970934750/34.
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Chen, Jyun-Wei, and 陳鈞瑋. "Nitrogen doped p-type ZnO prepared by reactive ion beam sputter deposition." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/8mh8zh.
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碩士國立臺灣科技大學
電子工程系
99
Nitrogen doped ZnO thin films have been prepared by reactive ion beam sputter deposition on quartz and glass substrates at 300?aC utilizing un-doped ZnO buffer layers. Experimental results show that with a nitrogen flow rate of 5 sccm and 0.5 sccm, the (002) diffraction peak of ZnO:N shifts to lower angles and exhibit preferred orientation along the c-axis, indicating the replacement of oxygen by molecular nitrogen and atomic nitrogen. Raman spectroscopy analysis shows three peaks at 275、436、582 cm-1, indicating the incorporation of nitrogen into ZnO. Post-growth annealing at 500?aC for three minutes results in the strongest 582 cm-1 peak intensity. Annealing at higher temperature reduces the 582 cm-1 peak intensity while improving the 436 cm-1 peak intensity, indicating out-diffusion of nitrogen and improved ZnO crystalline quality. Hall measurement shows that p-type ZnO was obtained utilizing 0.5 sccm nitrogen flow rate. Annealing at 500?aC for three minutes results in the highest hole concentration of 2*1017/cm3 with a mobility of 3-55 cm2V-1s-1. ZnO:N deposited at 2 and 5 sccm exhibit n-type, which is due to the formation of (N2)O.
10
Liau, Chung-Chi, and 廖重期. "Characterization of Er-doped ZnO prepared by reactive ion beam sputter deposition." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/5wtc45.
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博士國立臺灣科技大學
電子工程系
99
Er-doped ZnO (Er:ZnO) thin films were prepared by dual beam reactive ion beam sputter deposition. Er:ZnO with Er concentration from 0.1 to 3.6 at.% was achieved by adjusting Er target ion beam current. All Er:ZnO shows characteristic Er3+ inner shell 4f transition at 1.0 (4I11/2 → 4I15/2) and 1.54 ?慆 (4I13/2 → 4I15/2). The 1.54 ?慆 emission is of special interests that the attenuation in silica optical fiber is the lowest. Er:ZnO with Er concentration at 0.5 at.% shows the strongest 1.54 ?慆 emission after annealing in oxygen ambient for 10 minutes. XPS analysis shows that as the amount of oxygen atoms located in oxygen deficient ZnO matrixes decreases, the 1.54 ?慆 emission increases. Electrical property measurement shows that highest electron concentration of 2.3 × 1019 cm-3 and lowest resistivity of 0.2 Ω?泌m can be achieved with an Er concentration of 1.1 at. %. ZnO/Si hetro-junction was fabricated using Er:ZnO on p-Si (100). The threshold voltage is 3.5 V and the reverse current under reverse bias of -20 V is 30 ?嫀.
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Tsai, Fu-chieh, and 蔡富傑. "A study of ZnO films grown by Reactive Ion Beam Sputter Deposition." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/17099291594175349101.
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碩士國立臺灣科技大學
電子工程系
96
Zinc oxide films are prepared by ion beam sputtering deposition utilizing two different arrangements. Oxygen is introduced into the growth chamber by passing through the capillaritron ion source together with the argon gas, or by releasing into the growth chamber separately. The influence of oxygen flow rates on the chemical composition, surface morphology, and optical properties of ZnO films are investigated. Before annealing, the XPS study indicates that by passing oxygen through the ion source, Zn/O ratio approaches 1.0. The transmittance of the films is larger than 80% in the visible range and the band gap are found from the transmission spectra to be between 3.3~3.45 eV. The refractive index of the films is close to 1.95.The X-ray analysis indicates that the as-deposited films are amorphous and the cross section is compact but exhibit columnar structure. The RMS of surface roughness is below 4nm. After annealing, the main diffraction peak of the films is (002) and its intensity is stronger as annelaed in oxygen than in nitrogen. The RMS of surface roughness increases, but is smaller than 10nm. PL spectra show that oxygen defects can be reduced when samples are annealed in oxygen.
12
Chiu, Mlng Chieh, and 邱明傑. "Study on the Electrochromic Tungsten Oxide Prepared by Reactive R.F. Magnetron Sputter Deposition." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/82426687252240664066.
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碩士逢甲大學
材料科學學系
87
Tungsten oxide as reveled, is the most coloring-efficient materials and its electrochromic behavior is highly dependent on its microstructure as reported. In this paper, a survey on the effect of oxygen concentration in the rf sputtering atmosphere and the subsequent deposited film will be studied to reveal the microstructure change in relation with their electrochromic properties.SEM, XRD, AES and ESCA were used to study the film thickness, structure, composition and binding state. Lithium ions were inserted in the films by using a 0.1M LiClO4/propylene carbonate (PC) anhydrous electrolyte to study the cyclic voltammetric characteristics, response time, memory effect and aging behavior. Optical characteristics were analysed by UV-VIS spectrometer to study the transmittance of coloring and bleaching in order to measure its coloring efficiency. Experimental results show that WO3 films prepared at different O2/Ar flow ratio are amorphous analysed by XRD. Oxygen concentration in the films tends to saturate above O2/Ar flow ratio at 0.2. Even though saturated oxygen concentration, the deposited films showed extreme difference in electrochromic characteristics. The amount of Li+ insertion in the films deposited at low O2/Ar flow ratio were found to determind by those edge-sharing low valence tungsten ions, while that deposited at high O2/Ar flow ratio were hypothetically due to the limitation of electron conduction. Films deposited at O2/Ar flow ratio at 0.4~0.5 had optimized electrochromism and its transmittance change between coloring and bleaching reached to its maximum value about 40%. Specimens prepared in this range show good memory and repetitive colouring/bleaching characteristic. This study can have a microscopically looking inside the coloring mechanism of a r.f. sputter deposited tungsten oxide, meanwhile provide the optimization of the process.
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Chang, Tzu-yen, and 張慈讌. "Characterization of MgZnO thin films deposited by reactive dual ion beam sputter deposition." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/enuwqf.
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碩士國立臺灣科技大學
電子工程系
99
MgxZn1-xO thin films with x = 0 ~ 0.46 has been deposited on Si (100), glass and quartz substrates by reactive dual ion beam sputtering deposition. XRD analysis shows that as x increases, a-axis lattice constant increases while the grain size decreases. As x reaches 0.40, the cubic phase becomes discernable. PL study of MgxZn1-xO thin films shows emission energy varying from 3.26 (x = 0) to 3.52 eV (x = 0.46). The blueshift of emission energy is attributed to Mg atoms replacing Zn atoms that lead to increased bandgap. The optical bnadgap of MgxZn1-xO thin film increases from 3.36 to 4.36 eV as x increases from 0 to 0.46. The electrical properties of MgxZn1-xO can be improved by doping witn nitrogen or annealing in nitrogen ambient. Under optimized conditions, the rejection ratio of photodetectors fabricated by nitrogen doped MgxZn1-xO exhibit a rejection ratio of ~ 10.
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He, Yunbin [Verfasser]. "CuInS2 thin films for photovoltaic : RF reactive sputter deposition and characterization / von Yunbin He." 2006. http://d-nb.info/981580297/34.
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Chang, Cheng-Yi, and 張誠一. "Reactive RF Magnetron Sputter Deposition and in-situ Modification of NiOx Thin Film Anodes." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/89653976125165463492.
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碩士逢甲大學
材料科學所
92
Lithium ion secondary batteries had recently received extensive attention to be used as a portable energy source, particularly, for lightweight, compact 3C electronics, owing to their high and stable working voltage, superior energy density, low self-discharge rate, and long cycling life. In this study, nickel oxide thin film anodes were prepared by a reactive radiation frequency magnetron sputtering technique. The properties of thin films can be controlled by negative substrate bias technique. It improved film crystallization, microstructure, grain size and texture, and the electrochemical behavior. Traditionally, post-anneal is used to improve film crystallization. It limits the choice of substrates. Since the bias technique is a low temperature process, in which the ions with sufficient bombarding energy can result in in-situ modification of the films. Therefore, high temperature post-anneal is most necessary. Langmuir probe method was applied to study the characteristics of the plasma in reactive rf magnetron sputtering process in order to build up the operational window of O2/Ar flow ratio and negative bias. We found that the ion bombardment could transform (200) texture to (111), and caused films defects. Because of the increase of the defects in the film structure, the UV-visible transmittance decreased. In general, all film anodes had high capacity (�d 850 mAh/g). By switable negative bais, thin film with nanocrystallites and low capacity lost could be achieved (�T 29.9 �s). Thin film produced by low bias (20 V) and high oxygen flow (O2/Ar = 3/1) had the best Coulomb efficiency (�d 99.04 �s). Therefore, the films could be optimized by well-tuned negative bias and O2/Ar flow ratio at low temperature (�T 150 ℃)
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Chang, Chun-Chi, and 張峻旗. "Characterization of AgxO and Al:AgxO thin films prepared by reactive ion beam sputter deposition." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/36868511892878382565.
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碩士國立臺灣科技大學
電子工程系
104
In this study, silver oxide and Al doped silver oxide thin films were deposited by reactive ion beam sputter deposition using various ion beam energy and oxygen partial flow rates (Opf). Experimental results show that single phase Ag2O can be successfully prepared utilizing an anode voltage of 700 V with an Opf = 100% at 200°C. Increasing the anode voltage to 1000 V with Opf = 100% at 200°C results in the formation of single phase AgO. Samples deposited with anode voltage of 1500 V are mixed AgO and Ag2O. With Opf less than 80% or with deposition temperature higher than 200°C, silver is always present in the thin film, indicating incomplete oxidation of silver. After Al is doped into silver oxide with Ag2O deposition condition, XRD analysis indicates that with the introduction of Al, the grain size of Ag2O increases from 4.2 to 17.9 nm. After Al is doped into silver oxide with AgO deposition condition, the AgO transform into Ag2O and the diffraction peak of Ag2O (111) shifts from 32.96°to 33.06°, indicating the Al3+ successfully replaced Ag3+. Raman analysis indicates silver carbonate at 700, 780, 810 and 930 cm-1, indicating the presence of carbon dioxide adsorption on the surface of the sample. Both Ag2O and AgO exhibit a direct band gap property with the value of 3.0 and 2.9 eV, respectively. As Al concentration increases from 0.0 at.% to 4.7 at.%, the band gap of Al:Ag2O increases from 3.0 to 3.2 eV, then decreases to 3.0 eV as Al reaches 6.0 at.%. Al doped Ag2O shows decrease of resistivity as Al concentration increases. When introduce Al into thin film, the resistivity decrease from 40 kΩ•cm to 1.5 kΩ•cm with anode voltage 700 V, and also decrease from 10 kΩ•cm to 1 kΩ•cm with anode voltage 1000 V.
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Chou, Patrick, and 鄒百騏. "Improvement of HfO2 by Reactive Sputter of Optimized Oxygen Content and Post Deposition Annealing." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/46347608636961442003.
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碩士長庚大學
電子工程研究所
93
Abstract According to the technology roadmap, the standard CMOS gate oxide material which has served the industry so long with high performance and good reliability will be changed when the process technology continue to scale down. Copper will replace Al-alloy, low-k dielectric will replace SiO2-base IMDS and high-k gate dielectric will replace SiO2 gate-oxide. However, many high-k gate dielectric (e.g. TiO2, Ta2O5, BST…) are thermally unstable when it is directly contacted with Si and need an additional barrier layer to prevent from reaction. From above discussion, we take HfO2 films as the promising gate dielectric due to its high dielectric constant of up to 40, energy gap of 5.65eV, and thermodynamically stable when it is contacted with Si. In this thesis, we discussed the electrical characteristics including C-V, I-V and SILC of MOS capacitors.
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Hu, Min-An, and 胡敏安. "Characterization of Al doped CuO/Cu2O thin films prepared by reactive ion beam sputter deposition." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/13140111319922810255.
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碩士國立臺灣科技大學
電子工程系
104
Aluminum doped copper oxide thin films have been deposited by reactive ion beam sputter deposition at 300C with an Ar:O2 ratio at 3:2, 2:1 and 6:1. With Ar:O2 ratio at 3:2, regardless of Al concentration, single phase CuO thin films were obtained. The introduction of Al results in CuO (111) diffraction peak shifting to larger angles, indicating the incorporation of Al in CuO. The introduction of Al results in change from indirect bandgap to direct bandgap and the bandgap of CuO increases from 2.45 eV to 2.89 eV as Al concentration reaches 10 at.%. With Ar:O2 ratio at 2:1, the thin films are mixed CuO and Cu2O phases or polycrystalline CuO. The introduction of Al results in increase of transmittance to 60%, while the bandgap remains the same. With Ar:O2 ratio at 6:1, polycrystalline Cu2O thin films were obtained regardless of Al concentration. The introduction of Al results in increase of transmittance to 70%, while the bandgap remains approximately the same. Doping of Al results in drop of the resistance from 500 Ω·cm to 200 Ω·cm for both CuO and Cu2O.
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Tseng, I.-lan, and 曾奕嵐. "Thermal stability of silver oxide (AgxO) thin films prepared by reactive ion beam sputter deposition." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/41053578909325209215.
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碩士國立臺灣科技大學
光電工程研究所
101
Silver oxide thin films were deposited by reactive ion beam sputter deposition utilizing a capillaritron ion source (6 ~ 8 kV, 100 ~ 500 uA) and an anode layer ion source (0.7 kV, 13.5 mA). Both argon and oxygen were passed through the ion source simultaneously to act as sputtering and reactive gases, respectively. Experimental results show that only silver thin films were achieved utilizing the capillaritron ion sources, regardless of oxygen partial flow rates or deposition temperatures. This may due to the high kinetic energy of ejected particles that prevents the formation of silver oxide. Monoclinic AgO thin films were obtained utilizing the anode layer ion source with an argon/oxygen flow rate ratio of 1:1, 1:2, 1:3, 1:4 and full oxygen at room temperature. The monoclinic AgO thin film exhibits a preferred growth direction along the [002] direction. Annealing at 300?aC in air results in transformation to cubic Ag2O. High annealing temperature at 400?aC results in complete reduction to silver. And in an argon oxygen ratio of 1：1 and 1：2, there is coexistence AgO and Ag2O phase. XPS analysis show that as the oxidation state decreases, Ag 3d binding energy increases from 367.9 eV to 368.1 eV, which is characteristic of silver oxide. Both AgO(AgO+Ag2O) and Ag2O exhibit a direct band gap of 2.25 eV and 2.35 eV, respectively.
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Peng, Han-chen, and 彭翰晨. "Nitrogen doped ZnO thin films prepared by anode layer ion source reactive ion beam sputter deposition." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/qtya6e.
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碩士國立臺灣科技大學
電子工程系
100
Nitrogen doped ZnO (ZnO:N) thin films have been deposited by reactive ion beam sputter deposition utilizing an anode layer ion source. Both argon and nitrogen were passed simultaneously through the ion source to act as sputtering and reactive ion species, respectively. The plasma spectrum of the anode layer ion source shows distinctive atomic nitrogen emission lines suggesting that the incorporation of atomic nitrogen into ZnO may be improved. Experimental results show that all the film exhibit a preferred orientation along the (002) direction. A 20 nm un-doped ZnO was first deposited at 200?aC and subsequently annealed at 700?aC to act as buffer layers. Higher annealing temperature causes decomposition of the ZnO film and results in increased deep level green emission. ZnO:N was deposited on the buffer layer at 25 ~ 300?aC. Micro-Raman spectroscopy analysis shows Raman peaks at 275 and 582 cm-1, which is due to the local vibration mode of nitrogen in ZnO. All the nitrogen doped ZnO exhibit n-type conductivity. Conversion from n-type to p-type was not observed regardless of nitrogen flow rates or post-growth annealing. This is likely due to the formation of molecular nitrogen occupying oxygen sites (N2)O that act as double donors. Variable temperature Hall effect measurement shows that at temperatures above 165 K, the transport is governed by thermally activated carriers. The activation energy for conduction in this temperature range is 73 meV. The bandgap of ZnO:N is 3.158 eV, while the transmittance is larger than 80% in the visible region.
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Lin, Yung-Chen, and 林勇辰. "Growth and characterization of copper (I, II) oxide thin films prepared by reactive ion beam sputter deposition." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/14160132880025144247.
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碩士國立臺灣科技大學
電子工程系
101
Copper oxide (CuO) and cuprous oxide (Cu2O) have been successfully deposited by reactive ion beam sputter deposition at 300 ~ 400℃ with argon (Ar) to oxygen (O2) ratio from 2:1 ~ 14:1. Experimental results show that with an Ar:O2 ratio of 2:1, single phase polycrystalline CuO thin films are obtained. As the Ar:O2 ratio reaches 3:1 ~ 4:1 , mixed CuO and Cu2O are found. Further increasing Ar:O2 ratio to 5:1 ~ 7:1 results in single phase polycrystalline Cu2O. As Ar:O2 reaches 8:1 and higher, the thin film is composed of mixed Cu2O and Cu covered with Cu2O nanorods. CuO thin film exhibits an indirect bandgap of 1.36 eV, while the Cu2O shows a direct bandgap of 2.46 eV. The resistivity of CuO and Cu2O deposited at 400oC were >18000 ohmic-cm and 5000 ohmic-cm, respectively. The formation of the Cu2O nanrod at high argon partial flow rate may due to the presence of excess copper that act as nucleation sites.
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Ejigu, Assamen Ayalew, and Assamen Ayalew Ejigu. "Growth and Characterization of Nanostructured Cu2O Semiconductor Thin Films for Optoelectronic Devices by Reactive Ion Beam Sputter Deposition." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/uny426.
Full textAbstract:
博士國立臺灣科技大學
光電工程研究所
106
Cuprous oxide (Cu2O) is a promising semiconductor material for photo-voltaic(PV), photoelectrochemical cells (PEC) and other optoelectronic applications. The aim of this thesis was to deposit and characterize high quality Cu2O nano-structures for these and other applications. In this study, well-structured Cu2O nano-rods, truncated nano-cubes, and nano-pyramids were successfully fabricated using ion beam sputter deposition (IBSD) in which the Cu2O samples were grown on quartz and silicon substrates with a substrate temperature of 450°C and a base pressure of 4.5 x 10-5 Torr using metallic copper as a target material. In the first part of this thesis, we studied the growth of different Cu2O nano-structures deposited on quartz substrates. The results show that by changing the argon/oxygen flow rates starting from 6:1 to 14:1, Cu2O thin film (Ar:O2=3.6:0.6), Cu2O nano-rods of length 1-2 µm (Ar:O2=4.5:0.5, 6:0.5, and 7:0.5) were grown on quartz substrates. In addition to the Cu2O thin film and Cu2O nano-rods grown on quartz substrates, triangular pyramids (Ar:O2=3.6:0.4), and Cu2O truncated nano-cubes (Ar:O2=4.4:0.4) were grown on Si/SiO2 substrates. The structural characterizations were done employing XRD and FE-SEM. The results show that all the samples are poly-crystalline structures Cu2O and the preferable growth direction was to the (111) crystal plane. All the samples were also investigated by Micro Raman spectra and the results indicate all the Raman bands are typical characteristic of the phonon modes of Cu2O phases. The temperature dependent PL measurements have been done for the samples and the results show Cu2O samples deposited with low oxygen flow rates (Ar:O2=4.5:0.5, 6.0:0.5, 4.4:0.4 and 7.0:0.5), have PL emission peak centered at ~720 nm which is attributed due to doubly oxygen vacancy induced luminescence at a temperature of 12 to 100 K. While the sample deposited with Ar:O2=3.6:0.6 shows no PL emissions which indicates that Cu2O nanostructures are prone to enhance the PL emissions. Among the different Cu2O nanostructures, Cu2O triangular nanopyramids interestingly shows a strong green exciton PL emission centered at 509 nm resulted due to radiative recombination of photogenerated electrons at room temperature. The PL measurements show that no PL emission as a result of copper vacancy defects showing the carrier types are of n-type. Furthermore, all the samples have been investigated using XPS and the results show the Cu2O Cu 2p core level binding energies centered at 932.4 eV, and 952.4 eV were observed. Moreover, the O 1s spectra at 530.5 eV shows additional confirmation of the surface composition and phase purity of Cu2O samples. Optical transmittance measurements also have been done and the results show that transmittance value is lower for Cu2O thin film and higher for Cu2O nanorods. The highest transmittance value is obtained for the sample with argon/oxygen flow rate of 9:1 which is ~79%. The Tauc's plots of all the samples show also that the band gap shifts from 2.5 eV to 2.3 eV as the oxygen flow rates drops. The photoelectrochemical characterizations also show all the samples deposited with low oxygen flow rates show n-type carrier and p-type for samples deposited at high oxygen flow rates. The stability of the photocurrent values generated by Cu2O photoelectrodes were excellent (~95%). The photocurrent measurements show that the sample with argon/oxygen flow rate of 9:1 shows a significantly enhanced anodic photocurrent density of ~2.2 mA/cm2. The Mott-Schottky plots of the samples except the one with higher oxygen flow rate (Ar:O2=6:1) (which shows a negative value of the slope), show positive values of the slopes which are additional confirmations of the n-type carriers. The calculations of the carrier densities from the Mott Schottky plots shows that the highest values is obtained for the sample with argon/oxygen flow rate of 9:1 which has a value of and the smaller value of the acceptor densities is for the p-type sample which is . We also demonstrated the application of the Cu2O photo-electrodes for water reduction and oxidation by studying the band edge positions of the semiconductors with respect to both normal hydrogen electrode and vacuum energy levels and the samples are promising for use as photo-electrode materials.
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Guo, Ting-Ying, and 郭亭瑩. "Reactive DC Sputter Deposition of Tungsten Oxide Films with its Plasma Parameter Effect on the Microstructure and Electrochromic Properties." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/97946296624013085741.
Full textAbstract:
碩士逢甲大學
材料科學所
93
Tungsten with various valences can form non-stoichiometric WO3-x which can be applied as gas sensor, photocatalytic materials and electrochromic mateials. Due to its high transmittance, excellent coloration efficiency, reversibility, low cost, longer durability and non- toxicity, it has been made electrochromic device early. In this study, tungsten oxide was deposited by reactive DC magnetron sputtering at different target currents and oxygen partial pressures. A variety of plasma diagnostics are used to correlate discharge parameters with microstructure and electrochromic properties of the deposited films. Experimental results show that when the oxygen partial ratio reaches a value of 37 %, it causes the increase of target voltage to a maximum critical value of 480 V at a fixed target current of 0.3 A, while it reaches 565 V when increasing oxygen partial ratio to the value of 65 % at a fixed target current of 1.0 A. This implies the critical target poisoning occurs at different oxygen partial ratio when different target current were used. W, Ar*, Ar+ and O2+ were found as the main species in the discharge, which the former three species give a manifest decrease at higher oxygen partial ratio, while O2+ monotonically increases indicating the overall increasing in ion density of the discharge is mainly contributed by such species. All over the range of oxygen partial ratio and it exhibit a fine columnar nano-structure, regardless of the target current. This is attributed to the higher crystal formation energy required by tungsten oxide crystal. Film growth rate strongly depends on the oxygen partial ratio and target current. Maximum growth rate occur to a certain oxygen partial ratio nearly the critical target poisoning point at each target current. This is governed by the difference of molar volume ratio of tungsten and its oxide to bring its positive effect, over the target poisoning point is then dominated by the decreased sputter yield. The valence state of tungsten in the deposited films, determined from Raman spectrum, is shown to be dependent on the oxygen partial ratio.Maximum amount of four and five valenced tungsten can be found in the deposited films by using critical target poisoning oxygen partial pressure, eg. oxygen partial ratio to the value of 65 % at the target current of 1.5 A, where maximum transmittance change and optical density of 35.4 % and 0.29, respectively, were obtained.
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Ko, Po-Ta, and 柯伯達. "Growth and characterization of cobalt oxide and copper doped cobalt oxide thin films prepared by reactive ion beam sputter deposition." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/60287375506989162329.
Full textAbstract:
碩士國立臺灣科技大學
電子工程系
104
Cobalt oxide and copper doped cobalt oxide have been deposited by reactive ion beam sputter deposition. The effect of deposition temperatures and oxygen partial flow rates Opf (= O2/(O2+Ar)) on the properties of cobalt oxide and copper-cobalt oxide thin films were characterized. Experimental results show that cobalt oxide samples deposited at 150°C and 300°C are all Co3O4 and copper doped cobalt oxide samples result in the formation of CuCo2O4. As Opf increases, both XRD signal intensity drops, while the resistivity of Co3O4 and CuCo2O4 decrease as well. CuCo2O4 deposited at 300°C with Opf = 1.0 shows the lowest resistivity of 2.410-3 (·cm). The hole carrier concentration and mobility were estimated to be 9.721019 (cm-3) and 26.6 cm2 (Vs)-1, respectively. Hall measurement shows that both cobalt oxide and copper-cobalt oxide are all p-type semiconductor thin films. Co3O4 shows two band gap at ~1.4 and 2.0 eV, while CuCo2O4 shows only one direct band gap at 1.5~2 eV. The decrease in resistivity of CuCo2O4 is likely due to the presence of Cu that results in higher metal vacancy defects.
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許漢鑫. "Deposition, characterization and field emission of reactive sputtered amorphous carbon films." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/76912038477624744394.
Full textAbstract:
碩士國立臺北科技大學
機電整合研究所
88
ABSTRACT This thesis is focus on the development of amorphous carbon thin film applying in the filed emission display technology. The amorphous carbon thin film was deposited on silicon substrates by radio frequency magnetron sputtering with the target material of nano-diamond powder target under various reaction atmospheres. The surface morphology of the thin film was examined by the scanning electron microscope and the atomic force microscope. The images showed that the grain size of the deposit on the surface were grown with the increasing substrate temperature and a higher gas flow rate. The Auger electron spectrometer was used to analyze the composition and the results indicated that the carbon content was around 90 % in the film deposited in each condition. The chemical bonding in the thin film was scrutinized by Raman spectroscopy and FTIR. The electron emission properties were investigated by parallel electrode method under high vacuum. During the measurement, a uniform illumination was observed on the ITO coated glass anode. It was also observed that the edge effect could be avoided by using the ITO anode with an area smaller than that of the cathode. It was concluded that the thin films deposited on high temperature substrate by argon sputtering have the highest emission current density of 11.8 mA/ cm2, under the electric field of 18.3 V/m. Surface bombardment by Ar+ could enhance the emission properties, such as the initiating electric field could be lowered to be 7.1 V/m. Such enhancement was not observed for the N+ bombarded thin films. For the film etched by hydrogen plasma, a lower initiating electric field could be observed as well. Besides, it was also observed that the emission properties would be better under the higher vacuum condition and the initiating electric field would be lower while the measurement was being performed with larger gap.
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Su, Wei-chuan, and 蘇偉釧. "Phase-Transition Behavior of Radio-Frequency Sputter-Deposited Titanium Oxide Thin Films Induced by Reactively Depositing Ambient and Annealing." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/31817475684617779900.
Full textAbstract:
碩士逢甲大學
材料科學所
94
An ultra-high-vacuum radio-frequency magnetron sputtering system was employed to deposit a series of oxygen-contained, titanium-related films without the interference of gaseous impurities, under a fixed Ar pressure (PAr) at 1.33 × 10−1 Pa mixed with a given oxygen pressure (PO2) ranging from 1.33 × 10−4 to 6.65 × 10−2 Pa, equivalent to oxygen-to-argon pressures ratios (PO2/Ar) from 1 × 10−3 to 0.5. The films, which were deposited on n-type Si (100) substrates without intentional heating, were subject to annealing, respectively, under vacuum (700, 800℃) and oxygen atmospheres (500, 700℃) for 1 h. Doing so allows the effects of varying sputtering and annealing ambiences on the evolutions of phase transformations as well as related electrical and physical properties to be understood. Glancing-angle X-ray diffraction (GIXRD), synchrotron X-ray absorption spectroscopy (XAS) and diffraction, and Auger electron spectroscopy (AES), together with the data of electrical resistivities and deposition rates, reveal that the TiO2 films at the as deposited state are amorphous, and thus have to be crystallized by adequate (vacuum) annealing, facilitating the identification of their phase distribution. Gradually increasing the magnitude of PO2/Ar induces a sequence of phases, including heavily oxygen-incorporated, metallic α-Ti(O0.6) (PO2/Ar = 1 × 10−3) , oxygen-rich, metallic titanium monoxide, i.e., TiO1.6 (PO2/Ar = 1 × 10−3), oxygen-poor anatase TiO1.8 (PO2/Ar = 1 × 10−2), dual-phase of oxygen-poor anatase and rutile TiO1.9 (PO2/Ar = 5 × 10−2~0.1), and stoichiometric anatase TiO2 (PO2/Ar = 0.3). At PO2/Ar = 0.5, the rutile phase re-appears and the TiO2 film again becomes a dual-phase of anatase and rutile. The results of vacuum annealing show that the crystallization temperature (Tc) of thin films of the single-phase anatase (PO2/Ar = 0.3) and dual phases of anatase and rutile (PO2/Ar = 0.5) differs markedly (700℃ and 800℃, respectively). Moreover, the oxidizing (O2) annealing atmosphere plays a role to accelerate the crystallization and transformation of the as-deposited films into TiO2. For example, thin films of fcc-TiO (PO2/Ar = 5 × 10−3) and dual-phase TiO1.9 (PO2/Ar = 0.1) can be crystallized, respectively, into rutile-TiO2 and anatase-TiO2 at a reduced Tc of 500℃. Additionally, α-Ti(O0.6) (PO2/Ar = 1 × 10−3) and TiO1.8 (PO2/Ar = 1 × 10−2) are both transformed into rutile-TiO2 after 700℃ annealing. Finally, results from integrating all the experimental data reveal that varying the sputtering and annealing atmospheres causes the sputter-deposited titanium oxide thin films to undergo a sequence of phase transitions, and thus induces significant changes in electrical resistivity, deposition rate, topology, which in turns alters the physical and chemical properties such as bonding structure.