Log in

Relevant bibliographies by topics / Rectifying contacts / Journal articles

To see the other types of publications on this topic, follow the link: Rectifying contacts.

Journal articles on the topic 'Rectifying contacts'

Author: Grafiati

Published: 3 June 2025

Last updated: 31 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Rectifying contacts.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Prakash, Om, K. N. Muralidhara, and K. Ravindra. "Rectifying Contacts on CdSe Films." IETE Technical Review 7, no. 4 (1990): 260–63. http://dx.doi.org/10.1080/02564602.1990.11438651.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Saxena, Ashok K. "Metal Semiconductor Contacts: Ohmic and Rectifying." IETE Journal of Education 26, no. 1 (1985): 3–14. http://dx.doi.org/10.1080/09747338.1985.11436034.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Gustafsson, G., O. Inganäs, M. Sundberg, and C. Svensson. "Rectifying metal/poly(3-hexylthiophene) contacts." Synthetic Metals 41, no. 1-2 (1991): 499–502. http://dx.doi.org/10.1016/0379-6779(91)91117-s.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Humphreys, T. P., J. D. Hunn, B. K. Patnaik, N. R. Parikh, D. M. Malta, and K. Das. "Silicon carbide/diamond heterostructure rectifying contacts." Electronics Letters 29, no. 15 (1993): 1332. http://dx.doi.org/10.1049/el:19930893.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Khanna, Rohit, S. J. Pearton, F. Ren, I. Kravchenko, C. J. Kao, and G. C. Chi. "W2B-based rectifying contacts to n-GaN." Applied Physics Letters 87, no. 5 (2005): 052110. http://dx.doi.org/10.1063/1.2007865.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Zhang, L. C. "Refractory metal nitride rectifying contacts on GaAs." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 5, no. 6 (1987): 1716. http://dx.doi.org/10.1116/1.583653.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Muztoba, Md, and Mukti Rana. "Rectifying and Schottky characteristics of a-SixGe1−xOy with metal contacts." Canadian Journal of Physics 92, no. 7/8 (2014): 606–10. http://dx.doi.org/10.1139/cjp-2013-0614.

Full text

Abstract:

Metal–semiconductor contacts are a vital part of semiconductor devices as they can form a Schottky barrier or an Ohmic contact. The nature of the contact plays an important role in determining the electrical and physical characteristics of the device and hence is of paramount importance in the operation of the device. In the current work we report the design, fabrication, and current–voltage (I-V) characteristics of microbolometers, a type of infrared detector where the change in temperature changes the resistance of the sensing layer. Eight different types of microbolometers were fabricated u

APA, Harvard, Vancouver, ISO, and other styles

8

Ma, G.-H. M., N. D. Evans, T. Tachibana, R. E. Clausing, and J. T. Glass. "Annealing effects on the microstructure of titanium electrical contacts on diamond films." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 740–41. http://dx.doi.org/10.1017/s0424820100088014.

Full text

Abstract:

With its large band gap and a unique combination of many excellent properties, diamond is regarded as an excellent candidate for making electronic devices for operation at high temperature. In order to fabricate diamond devices, suitable electrical contacts and appropriate deposition techniques must be developed. Titanium is considered a suitable candidate material for diamond electrical contacts based on its properties. Recent current-voltage (I-V) measurements showed that as-deposited titanium contacts on boron-doped semiconducting diamond are rectifying in nature. However, upon post-deposit

APA, Harvard, Vancouver, ISO, and other styles

9

ROCCAFORTE, FABRIZIO, FRANCESCO LA VIA, and VITO RAINERI. "OHMIC CONTACTS TO SIC." International Journal of High Speed Electronics and Systems 15, no. 04 (2005): 781–820. http://dx.doi.org/10.1142/s0129156405003429.

Full text

Abstract:

In this chapter, the most significant results obtained in the last decade in the field of ohmic contacts to SiC are reviewed. First, the basic concepts related to the physics of ohmic contacts and to the contact resistance measurement techniques are briefly reported. Then, some aspects concerning the formation of low resistance (10-5-10-6 Ω cm 2) ohmic contacts on n-type and for p-type SiC are discussed, focusing on Ni -based and Al/Ti -based contacts. Examples of innovative applications on practical devices are also reported, as the simultaneous formation of ohmic contacts on n- and p-type Si

APA, Harvard, Vancouver, ISO, and other styles

10

Sundberg, M., G. Gustafsson, and O. Inganäs. "Rectifying metal‐polymer contacts formed by melt processing." Applied Physics Letters 57, no. 7 (1990): 733–34. http://dx.doi.org/10.1063/1.103602.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Ingerly, D. B., Y. A. Chang, and Y. Chen. "NiIn as an Ohmic Contact to P-GaN." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 745–50. http://dx.doi.org/10.1557/s1092578300003355.

Full text

Abstract:

Based on the criteria for the solid state exchange reaction with p-GaN, we have investigated the intermetallic compound NiIn as a possible ohmic contact. The contacts were fabricated by depositing NiIn on p-GaN films (p ∼ 2 × 1017 cm−3) using RF sputtering from a compound target. The as-deposited, NiIn contacts were found to be rectifying and using I-V characterization a Schottky barrier height of 0.82 eV was measured. Rapid thermal annealing of the contacts was shown to significantly decrease their resistance, with contacts annealed at 800 °C for 1 min yielding the lowest resistance. When ann

APA, Harvard, Vancouver, ISO, and other styles

12

Rogdakis, Konstantinos, Edwige Bano, Laurent Montes, Mikhael Bechelany, David Cornu, and Konstantinos Zekentes. "Schottky Barrier 3C-SiC Nanowire Field Effect Transistor." Materials Science Forum 679-680 (March 2011): 613–16. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.613.

Full text

Abstract:

Back-gated field effect transistors (FETs) based on catalyst-free grown 3C-SiC nanowire (NW) were fabricated. Devices with rectifying Source (S) and Drain (D) contacts have been observed. In contrast with the ohmic-like devices reported in the literature, the Schottky contact barrier (SB) at S/ D regions acts beneficially for the FET performance by suppressing the off-current. At high positive gate voltages (>10 V), the Schottky barriers tend to be more transparent leading to ION/IOFF ratio equal to ~ 103 in contrast to the weak gating effect of the ohmic-contacted 3C-SiC NWFETs.

APA, Harvard, Vancouver, ISO, and other styles

13

HEINEMANN, MARTINA. "FERMI LEVEL PINNING AT A SCHOTTKY BARRIER: Na ON GaAs(110) FROM THE LOW TO THE HIGH COVERAGE REGIME." Surface Review and Letters 01, no. 04 (1994): 429–33. http://dx.doi.org/10.1142/s0218625x94000394.

Full text

Abstract:

The large group of rectifying metal-semiconductor interfaces is better known under the name Schottky barriers or contacts. Their rectifying behavior has been reported for the first time by Braun in 1874 but the understanding of the actual physics at such interfaces is still not complete. This paper summarizes the development of models and shows how modern calculational methods can contribute to a better understanding of Schottky barriers.

APA, Harvard, Vancouver, ISO, and other styles

14

Rau, U., and Jens Werner. "An Analytical Model for Rectifying Contacts on Polycrystalline Semiconductors." Solid State Phenomena 67-68 (April 1999): 553–58. http://dx.doi.org/10.4028/www.scientific.net/ssp.67-68.553.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Hartsell, M. L., H. A. Wynands, and B. A. Fox. "Characterization of rectifying contacts on natural type IIb diamond." Applied Physics Letters 65, no. 4 (1994): 430–32. http://dx.doi.org/10.1063/1.112323.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Canali, C., F. Chiussi, F. Fantini, L. Umena, and M. vanzi. "Electromigration effects in power MESFET rectifying and ohmic contacts." Electronics Letters 23, no. 8 (1987): 364. http://dx.doi.org/10.1049/el:19870267.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

Gluche, P., S. D. Wolter, T. H. Borst, W. Ebert, A. Vescan, and E. Kohn. "Highly rectifying Au-contacts on diamond-on-silicon substrate." IEEE Electron Device Letters 17, no. 6 (1996): 270–72. http://dx.doi.org/10.1109/55.496454.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Tachibana, T., J. T. Glass, and D. G. Thompson. "Titanium carbide rectifying contacts on boron-doped polycrystalline diamond." Diamond and Related Materials 2, no. 1 (1993): 37–40. http://dx.doi.org/10.1016/0925-9635(93)90139-s.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Hong, Jeongsoo, Ki Hyun Kim, and Kyung Hwan Kim. "Rectifying Characteristics of Thermally Treated Mo/SiC Schottky Contact." Coatings 9, no. 6 (2019): 388. http://dx.doi.org/10.3390/coatings9060388.

Full text

Abstract:

The rectifying characteristics of a Mo/SiC Schottky contact fabricated by facing targets sputtering system were investigated through current–voltage measurement. The Schottky diode parameters were extracted from the forward current–voltage characteristic curve by the Cheung and Cheung method and the Norde method. The as-deposited Mo/SiC Schottky contacts possessed Schottky barrier heights of 1.17 and 1.22 eV, respectively. The Schottky barrier heights of the diodes were decreased to 1.01 and 0.91 eV after annealing at 400 °C for 30 min. The ideality factor was increased from 1.14 and 1.08 to 1

APA, Harvard, Vancouver, ISO, and other styles

20

Águas, Hugo, Luís Pereira, Isabel Ferreira, et al. "Effect of Annealing on Gold Rectifying Contacts in Amorphous Silicon." Materials Science Forum 455-456 (May 2004): 96–99. http://dx.doi.org/10.4028/www.scientific.net/msf.455-456.96.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

Shuai, Yao, Shengqiang Zhou, Stephan Streit, et al. "Reduced leakage current in BiFeO3 thin films with rectifying contacts." Applied Physics Letters 98, no. 23 (2011): 232901. http://dx.doi.org/10.1063/1.3597794.

Full text

APA, Harvard, Vancouver, ISO, and other styles

22

Marinelli, C., L. Sorba, B. H. Müller, et al. "Ohmic versus rectifying contacts through interfacial dipoles: Al/InxGa1−xAs." Journal of Crystal Growth 201-202 (May 1999): 769–72. http://dx.doi.org/10.1016/s0022-0248(98)01468-7.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Ponpon, J. P. "A review of ohmic and rectifying contacts on cadmium telluride." Solid-State Electronics 28, no. 7 (1985): 689–706. http://dx.doi.org/10.1016/0038-1101(85)90019-x.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

Yasuda, K., T. Hayakawa, and M. Saji. "Annealing effects of Al/n-type 6H SiC rectifying contacts." IEEE Transactions on Electron Devices 34, no. 9 (1987): 2002–8. http://dx.doi.org/10.1109/t-ed.1987.23187.

Full text

APA, Harvard, Vancouver, ISO, and other styles

25

Hall, H. P., M. A. Awaah, and K. Das. "Deep-level dominated rectifying contacts for n-type GaN films." physica status solidi (a) 201, no. 3 (2004): 522–28. http://dx.doi.org/10.1002/pssa.200306748.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Smith, L. L., R. F. Davis, R.-J. Liu, M. J. Kim, and R. W. Carpenter. "Microstructure, electrical properties, and thermal stability of Ti-based ohmic contacts to n-GaN." Journal of Materials Research 14, no. 3 (1999): 1032–38. http://dx.doi.org/10.1557/jmr.1999.0137.

Full text

Abstract:

Single Ti layers, single TiN layers, and thin Ti films overlayered with Au were investigated as ohmic contacts to n-type (n 4.5 × 1017 to 7.4 × 1018 cm−3) single-crystal GaN (0001) films. Transmission line measurements (TLM) revealed the as-deposited TiN and Au/Ti contacts on n = 1.2 − 1018 cm−3 to be ohmic with room-temperature specific contact resistivities of 650 and 2.5 × 107minus;5 Ω cm2, respectively. Single Ti layer contacts had high resistance and were weakly rectifying in the as-deposited condition. The three contact/GaN systems exhibited a substantial decrease in resistivity after an

APA, Harvard, Vancouver, ISO, and other styles

27

Liu, R. J., L. M. Porter, M. J. Kim, R. W. Carpenter, and R. F. Davis. "Microstructure of Cr-B Ohmic and Rectifying Contacts on (0001) 6H Sic." Microscopy and Microanalysis 3, S2 (1997): 641–42. http://dx.doi.org/10.1017/s1431927600038484.

Full text

Abstract:

6H-SiC is a wide band-gap semiconductor. In recent years, a variety of high-power, -temperature, -speed and opto-electronic devices have been produced in 6H-SiC films. The future development of SiC device technology depends on the ability to form good ohmic and Schottky contacts. Plots of the current-voltage (I-V) characteristics of Cr-B contacts on (0001) 6H-SiC revealed that they became the most ohmic-like after annealing at 1000 °C for 240 sec. and rectifying after annealing for 300 sec, therefore TEM analysis of the microstructures of as-deposited and annealed Cr-B films should help in und

APA, Harvard, Vancouver, ISO, and other styles

28

Liu, R. J., L. M. Porter, M. J. Kim, R. W. Carpenter, and R. F. Davis. "Microstructure of Cr-B Ohmic and Rectifying Contacts on (0001) 6H Sic." Microscopy and Microanalysis 3, S2 (1997): 641–42. http://dx.doi.org/10.1017/s1431927600010096.

Full text

Abstract:

6H-SiC is a wide band-gap semiconductor. In recent years, a variety of high-power, -temperature, -speed and opto-electronic devices have been produced in 6H-SiC films. The future development of SiC device technology depends on the ability to form good ohmic and Schottky contacts. Plots of the current-voltage (I-V) characteristics of Cr-B contacts on (0001) 6H-SiC revealed that they became the most ohmic-like after annealing at 1000 °C for 240 sec. and rectifying after annealing for 300 sec, therefore TEM analysis of the microstructures of as-deposited and annealed Cr-B films should help in und

APA, Harvard, Vancouver, ISO, and other styles

29

Doroshkevich, Alexander S., Anna S. Zakharova, Boris L. Oksengendler, et al. "The Rectifying Contact of Hydrated Different Size YSZ Nanoparticles for Advanced Electronics." Nanomaterials 12, no. 24 (2022): 4493. http://dx.doi.org/10.3390/nano12244493.

Full text

Abstract:

The paper considers the new effects of the nanoscale state of matter, which open up prospects for the development of electronic devices using new physical principles. The contacts of chemically homogeneous nanoparticles of yttrium-stabilized zirconium oxide (ZrO2—x mol% Y2O3, x = 0, 3, 4, 8; YSZ) with different sizes of 7.5 nm and 9 nm; 7.5 nm and 11 nm; and 7.5 nm and 14 nm, respectively, was studied on direct current using nanostructured objects in the form of compacts obtained by high-hydrostatic pressure (HP-compacts of 300MPa). A unique size effect of the nonlinear (rectifying-type contac

APA, Harvard, Vancouver, ISO, and other styles

30

Zekentes, Konstantinos, Konstantinos Rogdakis, and Edwige Bano. "Material Limitations for the Development of High Performance SiC NWFETs." Materials Science Forum 711 (January 2012): 70–74. http://dx.doi.org/10.4028/www.scientific.net/msf.711.70.

Full text

Abstract:

Back-gated field effect transistors (FETs) based on 3C-SiC nanowire (NW) were fabricated and the electrical characterization revealed devices with either ohmic or rectifying contacts leading to two different operation modes. The transistors with ohmic-like contacts manifest very weak gating effect and the device switching off is not achievable even for high negative gate voltages due to the high electron concentration along the nanowires. In contrast, the devices with Schottky contact barrier at Source / Drain regions demonstrate a well determined switching off and in general better performanc

APA, Harvard, Vancouver, ISO, and other styles

31

Satoh, Masataka, and H. Matsuo. "Evaluation of Schottky Barrier Height of Al, Ti, Au ,and Ni Contacts to 3C-SiC." Materials Science Forum 527-529 (October 2006): 923–26. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.923.

Full text

Abstract:

The Schottky barrier height (SBH) of Al, Ti, Au, and Ni contacts to n- and p-type 3C-SiC is investigated by means of I-V and C-V measurements. All metal contacts to n- (net donor concentration: 1.0 x 1016 /cm3) and p-type (net acceptor concentration: 4 x 1016 /cm3) 3C-SiC show the rectifying I-V characteristics except for Al contact to n-type 3C-SiC. Only Al contact to n-type 3C-SiC shows the ohmic characteristics. As the work function of metal is increased from 4.3 (Ti) to 5.2 (Ni) eV, SBH for n-type 3C-SiC is increased from 0.4 to 0.7 eV and SBH for p-type 3C-SiC is decreased from 2.2 to 1.8

APA, Harvard, Vancouver, ISO, and other styles

32

Spera, Greco, Nigro, et al. "Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures." Energies 12, no. 14 (2019): 2655. http://dx.doi.org/10.3390/en12142655.

Full text

Abstract:

This paper compares the metal/semiconductor barrier height properties of non-recessed Ti/Al/Ti and Ta/Al/Ta contacts on AlGaN/GaN heterostructures. Both contacts exhibited a rectifying behavior after deposition and after annealing at temperatures up to 550 °C. The ohmic behavior was reached after annealing at 600 °C. High-resolution morphological and electrical mapping by conductive atomic force microscopy showed a flat surface for both contacts, with the presence of isolated hillocks, which had no significant impact on the contact resistance. Structural analyses indicated the formation of the

APA, Harvard, Vancouver, ISO, and other styles

33

Roccaforte, Fabrizio, Salvatore di Franco, Filippo Giannazzo, et al. "Silicon Carbide: Defects and Devices." Solid State Phenomena 108-109 (December 2005): 663–70. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.663.

Full text

Abstract:

In this paper, some basic aspects related to defects and SiC devices performances are discussed. Our recent work is reviewed and inserted in the international research scenario. In particular, some issues relative to rectifying metal/SiC contacts will be treated in more detail. In fact, establishing a correlation between material defects, processing induced defects and irradiation induced defects with the electrical behaviour of Schottky contacts is extremely important for the future optimization of almost all electronic devices, sensors and particle detectors.

APA, Harvard, Vancouver, ISO, and other styles

34

Chen, Meimei, Xiaoxiang Xia, Zongli Wang, Yunlong Li, Junjie Li, and Changzhi Gu. "Rectifying behavior of individual SnO2 nanowire by different metal electrode contacts." Microelectronic Engineering 85, no. 5-6 (2008): 1379–81. http://dx.doi.org/10.1016/j.mee.2008.01.027.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Lajn, A., M. Schmidt, H. von Wenckstern, and M. Grundmann. "Transparent Rectifying Contacts for Visible-Blind Ultraviolet Photodiodes Based on ZnO." Journal of Electronic Materials 40, no. 4 (2010): 473–76. http://dx.doi.org/10.1007/s11664-010-1395-x.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Humphreys, T. P., J. V. Labrasca, R. J. Nemanich, K. Das, and J. B. Posthill. "High Temperature Rectifying Contacts Using Heteroepitaxial Ni Films on Semiconducting Diamond." Japanese Journal of Applied Physics 30, Part 2, No. 8A (1991): L1409—L1411. http://dx.doi.org/10.1143/jjap.30.l1409.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

Stafford, L., L. F. Voss, S. J. Pearton, J. J. Chen, and F. Ren. "Schottky barrier height of boride-based rectifying contacts to p-GaN." Applied Physics Letters 89, no. 13 (2006): 132110. http://dx.doi.org/10.1063/1.2357855.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Audino, R., G. Autore, D. Dovio, and A. Piccirillo. "Rectifying effects on TiPtAu/p-lnGaAsP contacts induced by plasma processes." Electronics Letters 27, no. 25 (1991): 2359. http://dx.doi.org/10.1049/el:19911461.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Erlbacher, Tobias, Matthias Bickermann, Birgit Kallinger, Elke Meissner, Anton J. Bauer, and Lothar Frey. "Ohmic and rectifying contacts on bulk AlN for radiation detector applications." physica status solidi (c) 9, no. 3-4 (2012): 968–71. http://dx.doi.org/10.1002/pssc.201100341.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Porter, Lisa M., and Robert F. Davis. "A critical review of ohmic and rectifying contacts for silicon carbide." Materials Science and Engineering: B 34, no. 2-3 (1995): 83–105. http://dx.doi.org/10.1016/0921-5107(95)01276-1.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Fisichella, Gabriele, Giuseppe Greco, Fabrizio Roccaforte, and Filippo Giannazzo. "Electrical Properties of Graphene Contacts to AlGaN/GaN Heterostructures." Materials Science Forum 821-823 (June 2015): 986–89. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.986.

Full text

Abstract:

A nanoscale electrical characterization of graphene (Gr) contacts to AlxGa1-xN/GaN heterostructures has been carried out using conductive atomic force microscopy. The impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface was evaluated considering two Al0.25Ga0.75N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, i.e. a uniform and defect-free sample and a sample with a high density of V-defects, that locally cause a reduction of the AlGaN thickness. Rectifying contacts were found on the bare (Gr-free) AlGaN surfaces of

APA, Harvard, Vancouver, ISO, and other styles

42

Hsieh, Li Zen, and Jun Yan Chang. "Current Characteristics of AlGaN/AlN Ultraviolet Photodetector with Metal-Semiconductor-Metal Structure." Applied Mechanics and Materials 300-301 (February 2013): 1285–88. http://dx.doi.org/10.4028/www.scientific.net/amm.300-301.1285.

Full text

Abstract:

An AlGaN/AlN ultraviolet photodetector with metal-semiconductor-metal structure is fabricated on n type 4H-SiC substrate, which is conventionally epitaxial by metal-organic chemical vapor deposition (MOCVD). The MSM structure is composed of two interdigitated fingers usually formed by Schottky contact which deposited metal with high work function metal by e-beam metallization and thermal evaporator on high resistance layers. This type of MSM has potential advantages, including ultra low dark current because of its rectifying contacts. The current Characteristics are revealed in this paper. A r

APA, Harvard, Vancouver, ISO, and other styles

43

Pham, Hung V., Phuong Yen Le, Hiep N. Tran, et al. "Temperature dependent electrical characteristics of rectifying graphitic contacts to p-type silicon." Semiconductor Science and Technology 34, no. 1 (2018): 015003. http://dx.doi.org/10.1088/1361-6641/aaef69.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Punkka, E., and M. F. Rubner. "Formation of rectifying contacts to Langmuir-Blodgett films of poly(3-hexylthiophene)." Synthetic Metals 42, no. 1-2 (1991): 1509–13. http://dx.doi.org/10.1016/0379-6779(91)91887-g.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

Donoval, D., J. de Sousa Pires, P. A. Tove, and R. Harman. "A self consistent approach to IV-measurements on rectifying metal-semiconductor contacts." Solid-State Electronics 32, no. 11 (1989): 961–64. http://dx.doi.org/10.1016/0038-1101(89)90156-1.

Full text

APA, Harvard, Vancouver, ISO, and other styles

46

Hyland, A. M., R. A. Makin, S. M. Durbin, and M. W. Allen. "Giant improvement in the rectifying performance of oxidized Schottky contacts to ZnO." Journal of Applied Physics 121, no. 2 (2017): 024501. http://dx.doi.org/10.1063/1.4973487.

Full text

APA, Harvard, Vancouver, ISO, and other styles

47

Venkatesan, V., J. A. von Windheim, and K. Das. "Deep-level effects on forward characteristics of rectifying contacts on semiconducting diamond." IEEE Transactions on Electron Devices 40, no. 8 (1993): 1556–58. http://dx.doi.org/10.1109/16.223722.

Full text

APA, Harvard, Vancouver, ISO, and other styles

48

Liu, R. J., M. J. Kim, R. W. Carpenter, L. M. Porter, L. P. Scheunemann, and R. F. Davis. "A TEM Study of Cr Based Contacts to (0001) 6H-SiC." Microscopy and Microanalysis 6, S2 (2000): 1064–65. http://dx.doi.org/10.1017/s1431927600037818.

Full text

Abstract:

6H-SiC is a wide band-gap semiconductor. In recent years, a variety of high-power, -temperature, -speed and optoelectronic devices have been produced in SiC films. The search for metals which can form thermally stable, uniform ohmic contacts with SiC with low resistivity is still ongoing. In this study, Cr and CrBx (1<x<2) films were deposited by electron beam evaporation onto p-type, vicinal Si-terminated (0001) 6H-SiC surface. Both contacts exhibited rectifying behavior in the as-deposited condition. Ohmic-like behavior was observed for Cr/SiC system after annealing at 1000 °C for 240

APA, Harvard, Vancouver, ISO, and other styles

49

Shen, Mei, Amir Afshar, Manisha Gupta, et al. "Electrical Characteristics of TiW/ZnO Schottky contact with ALD and PLD." MRS Proceedings 1635 (2014): 127–32. http://dx.doi.org/10.1557/opl.2014.49.

Full text

Abstract:

ABSTRACTAn electrical and analytical study was carried out to investigate TiW/ZnO Schottky contacts with 30 nm ZnO thin film layers deposited by pulsed laser deposition (PLD), plasma enhanced atomic layer deposition (PEALD), and thermal atomic layer deposition (TALD). Devices with ZnO layer deposited by TALD exhibit approximately linear behavior in their I-V measurements. However, both devices with ZnO layers deposited by PEALD and PLD behaved like Schottky rectifiers with barrier heights between TiW and ZnO of 0.51 eV and 0.45 eV respectively and ideality factors of 2.0 and 2.3 respectively.

APA, Harvard, Vancouver, ISO, and other styles

50

Went, Cora M., Joeson Wong, Phillip R. Jahelka, et al. "A new metal transfer process for van der Waals contacts to vertical Schottky-junction transition metal dichalcogenide photovoltaics." Science Advances 5, no. 12 (2019): eaax6061. http://dx.doi.org/10.1126/sciadv.aax6061.

Full text

Abstract:

Two-dimensional transition metal dichalcogenides are promising candidates for ultrathin optoelectronic devices due to their high absorption coefficients and intrinsically passivated surfaces. To maintain these near-perfect surfaces, recent research has focused on fabricating contacts that limit Fermi-level pinning at the metal-semiconductor interface. Here, we develop a new, simple procedure for transferring metal contacts that does not require aligned lithography. Using this technique, we fabricate vertical Schottky-junction WS2 solar cells, with Ag and Au as asymmetric work function contacts

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!