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Dissertations / Theses on the topic 'Reference voltage'

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Published: 9 September 2021
Last updated: 29 July 2025

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1

Holman, William Timothy. "A low noise CMOS voltage reference." Diss., Georgia Institute of Technology, 1994. http://hdl.handle.net/1853/14968.

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2

Komark, Stina. "Design of an integrated voltage regulator." Thesis, Linköping University, Department of Electrical Engineering, 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1711.

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<p>Many analog systems need a stable power supply voltage that does not vary with temperature and time in order to operate properly. In a battery operated system the battery voltage is not stable, e.g. it decreases with decreasing temperature and with ageing. In that case a voltage regulator must be used, that regulates the battery voltage and generates a stable supply voltage to power other circuitry. </p><p>In this thesis a voltage regulator to be used in a battery operated system has been designed which meets the given specification of stability and power capabilities. A voltage reference,
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Mylonas, Georgios. "Programmable voltage reference generator for a SAR-ADC." Thesis, Linköpings universitet, Elektroniksystem, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-98567.

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SAR-ADCs are very popular and suitable for conversions up to few tens of MHz with 8 to 12 bits of resolution. A very popular type is the Charge Redistribution SAR-ADC which is based on a capacitive array. Higher speeds can be achieved by using the interleaving technique where a number of SAR-ADCs are working in parallel. These speeds, however, can only be achieved if the reference voltage can cope with the switching of the capacitive array. In this thesis the design of a programmable voltage reference generator for a Charge Redistribution SAR-ADC was studied. A number of architectures were stu
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Raczkowycz, Julian. "Monolithic data converters and integrated voltage reference sources." Thesis, University of Huddersfield, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.290740.

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5

Chan, Yiu Fai. "A new curvature-compensation technique for bandgap voltage reference." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape17/PQDD_0003/MQ28924.pdf.

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6

Schwartz, George N. (George Nelson) 1973. "A novel precision voltage reference using a micromechanical resonator." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/46269.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.<br>Includes bibliographical references (p. 112-113).<br>This thesis describes the analysis and design of a precision voltage reference (PVR) based upon a micromechanical resonator. The precision voltage reference consists of two closed loop controllers and a nonlinear resonator. The oscillator loop maintains oscillations in the resonator. The phase locked loop is a frequency control loop that locks the resonator frequency to an external frequency. The micromechanical device consist
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Zhang, ZiHao. "A High Temperature Reference Voltage Generator with SiC Transistors." Thesis, Virginia Tech, 2016. http://hdl.handle.net/10919/72888.

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Natural resources are always collected from harsh environments, such as mines and deep wells. Currently, depleted oil wells force the gas and oil industry to drill deeper. As the industry drills deeper, temperatures of these wells can exceed 210 °C. Contemporary downhole systems have reached their depth and temperature limitations in deep basins and are no longer meet the high requirements in harsh environment industries. Therefore, robust electronic systems that can operate reliably in harsh environments are in high demand. This thesis presents a high temperature reference voltage generator t
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Grohoľ, Stanislav. "Napěťová reference s LTZ1000." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2016. http://www.nusl.cz/ntk/nusl-242056.

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The thesis deals with the issue of stability of voltage reference based on LTZ1000(A) integrated circuit. At the beginning are specified main parameters of voltage references in terms of stability. The work presents distribution references by architecture and by method of connection to the circuit. Work compares some references of Analog Devices and Linear Technology companies. In work is described voltage reference LTZ1000(A) and its circuits from datasheet. Listed are the main factor that influence the stability of reference, such as temperature, PCB design, Zener diode bias current, airflow
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Souza, Flávio Queiroz de [UNESP]. "Projeto de uma referência de tensão com baixa susceptibilidade a interferência eletromagnética (EMI)." Universidade Estadual Paulista (UNESP), 2011. http://hdl.handle.net/11449/87063.

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Made available in DSpace on 2014-06-11T19:22:31Z (GMT). No. of bitstreams: 0 Previous issue date: 2011-08-05Bitstream added on 2014-06-13T19:08:04Z : No. of bitstreams: 1 souza_fq_me_ilha.pdf: 803035 bytes, checksum: 9aab0ce0802cfc37e761960c21f93140 (MD5)<br>Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)<br>Referências de tensão integradas com baixa sensibilidade à temperatura, tensão de a- limentação e eventos transitórios são componentes críticos na maioria dos circuitos integra- dos. Neste trabalho, além das restrições costumeiras, foi adicionada a preocupação com a i
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10

Kevin, Tom. "Sub-1V Curvature Compensated Bandgap Reference." Thesis, Linköping University, Department of Electrical Engineering, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-2585.

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<p>This thesis investigates the possibility of realizing bandgap reference crcuits for processes having sub-1V supply voltage. With the scaling of gate oxide thickness supply voltage is getting reduced. But the threshold voltage of transistors is not getting scaled at the same rate as that of the supply voltage. This makes it difficult to incorporate conventional designs of bandgap reference circuits to processeshaving near to 1V supply voltage. In the first part of the thesis a comprehensive study on existing low voltage bandgap reference circuits is done. Using these ideas a low-power, low-v
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11

Gupta, Vishal. "An accurate, trimless, high PSRR, low-voltage, CMOS bandgap reference IC." Diss., Available online, Georgia Institute of Technology, 2007, 2007. http://etd.gatech.edu/theses/available/etd-07052007-073154/.

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Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008.<br>Ayazi, Farrokh, Committee Member ; Rincon-Mora, Gabriel, Committee Chair ; Bhatti, Pamela, Committee Member ; Leach, W. Marshall, Committee Member ; Morley, Thomas, Committee Member.
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Herbst, Steven (Steven G. ). "A low-noise bandgap voltage reference employing dynamic element matching." Thesis, Massachusetts Institute of Technology, 2011. http://hdl.handle.net/1721.1/77071.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 109).<br>Bandgap voltages references are widely used in IC design, but are sensitive to low-frequency noise and component mismatch. This thesis describes the design and testing of a new IC voltage reference that targets these issues through three dynamic element matching (DEM) subsystems. The first is a chopper OTA, and the second two are component rotation schemes: one to exchange the positions
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MODARRES, MOHAMMAD. "Development of Reference Tools for Medium Voltage Measurements in Smart Grids." Doctoral thesis, Politecnico di Torino, 2017. http://hdl.handle.net/11583/2674202.

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The aim of this project is the design and the realization of a 30 kV reference voltage divider (VD) for smart grid monitoring, which will be mainly used in laboratories to characterize and calibrate the voltage transducers. The scale factor ratio error introduced by a normal voltage transducer (VT), according to technical report IEC/TR 61869-103 must be limited to a maximum of 1% up to 2nd harmonics and to a maximum of 5% up to the 50th harmonics. The maximum acceptable phase error should be no more than 18 mrad up to the 2nd harmonics and 90 mrad up to the 50th harmonics. Of course, the targe
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Souza, Flávio Queiroz de. "Projeto de uma referência de tensão com baixa susceptibilidade a interferência eletromagnética (EMI) /." Ilha Solteira : [s.n.], 2011. http://hdl.handle.net/11449/87063.

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Orientador: Nobuo Oki<br>Banca: Cláudio Kitano<br>Banca: Márcio Barbosa Lucks<br>Resumo: Referências de tensão integradas com baixa sensibilidade à temperatura, tensão de a- limentação e eventos transitórios são componentes críticos na maioria dos circuitos integra- dos. Neste trabalho, além das restrições costumeiras, foi adicionada a preocupação com a in- terferência eletromagnética a qual vem ganhando muita importância devido a crescente polui- ção eletromagnética no ambiente. Assim, neste trabalho, propõe-se o projeto de uma referên- cia de tensão tipo bandgap com baixa susceptibilidade a
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Mudroch, Michal. "Návrh nízkonapěťového napájecího a referenčního bloku založeného na teplotně stabilní napěťové referenci." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2019. http://www.nusl.cz/ntk/nusl-399479.

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In this diploma thesis there is elaborated design of low-voltage power supply block using I3T25 technology. The theoretical part describes the basic structures used in the design, using CMOS and bipolar devices. Furthermore, the properties and the analysis used in the evaluation are described. In the design part there is an elaborated design of individual parts, including voltage references, current references, DAC converter, operational amplifier. In the last part, the power supply block is subjected to simulations for verification of temperature compensated output variables and analyzed circ
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TEIXEIRA, MARCOS VINICIUS PIMENTEL. "IMPLEMENTATION OF NEW VOLTAGES OF REFERENCE IN OPERATION POINTS WITH ADEQUACY PROBLEMS OF VOLTAGE CONTROL ACTIONS BY GENERATOR." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 2012. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=21063@1.

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PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO<br>CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO<br>Casos reais de blecaute, caracterizados por afundamento de tensão, indicam que os procedimentos normais para o controle automático de tensão podem agravar o nível de tensão. Isto ocorre porque, em situações especiais, as ações de controle têm o efeito oposto ao esperado da sua lógica de projeto. Essas situações especiais podem ser identificadas através de ferramenta computacional que, baseada no sistema linearizado das equações de fluxo de carga e de todas as outras equações d
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Kacafírek, Jiří. "Návrh přesné napěťové reference v ACMOS procesu." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2010. http://www.nusl.cz/ntk/nusl-218682.

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In this thesis the principle of voltage reference especially bangap reference is described. Below are described two circuits of this type designed in ACMOS process. There is handmade evaluation of error analysis to identify main error contributors and also monte-carlo simulation. Also statistical analysis is made on the circuit. Results of all methods are compared. Error of reference voltage is compared for both circuits. Circuit with bigger error is optimized to achieve a better precision. Obtained results showed a good agreement of all methods, which evidences importance of hand error evalua
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Lima, Luis Henrique Rodovalho de. "Amplifier topologies for ultra low voltage applications." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2016. http://hdl.handle.net/10183/147758.

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Aplicações móveis que não podem ser recarregadas durante operação, como sensores biomédicos e aplicações da Internet das Coisas, dependem da extração de energia do próprio meio onde se encontram. Tensões de alimentação típicas são normalmente maiores que as disponiveis por métodos de extração de energia do meio e requerem uma conversão de nivel DC que invariavelmente resulta em perdas proporcionais ao fator de conversão. Consequentemente, aplicações projetadas para tensões de alimentação mais próximas da tensão nominal da fonte melhora a eficiência energética. Entretanto, topologias de circuit
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Kotrč, Václav. "Napěťové reference v bipolárním a CMOS procesu." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2015. http://www.nusl.cz/ntk/nusl-221111.

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This diploma thesis deals with precise design of Brokaw BandGap voltage reference comparing with MOS references. There is STEP BY STEP separation and analysis of proposed devices, using Monte Carlo analysis. There are also presented the methods for achieving a lower deviation of the output voltage for yielding device, which needs no trimming.
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BARTESELLI, EDOARDO. "Accurate Voltage Reference Generator for Audio Interface in 65/55nm CMOS Technology." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2022. http://hdl.handle.net/10281/364988.

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Negli ultimi anni i dispositivi mobili sono molto complessi e ricchi di funzionalità che consumano molta energia. Per questo motivo, l'industria elettronica sta spingendo verso la riduzione del consumo di energia e corrente nei dispositivi elettronici per aumentare la durata della batteria. Tutto va fatto mantenendo le stesse prestazioni o migliorandole. Questa tesi presenta un accurato generatore di riferimento di tensione per interfaccia audio in tecnologia CMOS a 65/55nm e particolare attenzione è stata posta al consumo di corrente. Il riferimento è costituito da un riferimento di tensione
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Guimaraes, Geraldo C. "Computer methods for transient stability analysis of isolated power generation systems with special reference to prime mover and induction motor modelling." Thesis, University of Aberdeen, 1990. http://digitool.abdn.ac.uk/R?func=search-advanced-go&find_code1=WSN&request1=AAIU028173.

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This thesis aims to establish computer methods for the transient stability analysis of electric power systems which operate isolated from the large interconnected system. A typical isolated system is characterized by a compact network in which the size of the load is relatively large when compared to the total, installed generation capacity. The stability problems are thus more severe for this system than for the grid-type system. This results in the need for more accurate representations for the system components in the computer studies. This work considers particularly the prime mover and th
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Tran, Sung. "Development of a Sensor Readout Integrated Circuit Towards a Contact Lens for Wireless Intraocular Pressure Monitoring." DigitalCommons@CalPoly, 2017. https://digitalcommons.calpoly.edu/theses/1750.

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This design covers the design of an integrated circuit (IC) in support of the active contact lens project at Cal Poly. The project aims to monitor intraocular eye pressure (IOP) to help diagnose and treat glaucoma, which is expected affect 6.3 million Americans by 2050. The IC is designed using IBM’s 130 nm 8RF process, is powered by an on-lens thin film 3.8 V rechargeable battery, and will be fabricated at no cost through MOSIS. The IC features a low-power linear regulator that powers a current-starved voltage-controlled oscillator (CSVCO) used for establishing a backscatter communication lin
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Bubla, Jiří. "Band Gap - přesná napěťová reference." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2009. http://www.nusl.cz/ntk/nusl-217808.

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This diploma thesis is specialized on a design of a high accuracy voltage reference Bandgap. A very low temperature coefficient and output voltage approx. 1,205V are the main features of this circuit. The paper contains a derivation of the Bandgap principle, examples of realizations of the circuits and methods of compensation temperature dependence and manufacture process, design of Brokaw and Gilbert reference, design of a testchip and measurement results.
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Mattia, Neto Oscar Elisio. "NanoWatt resistorless CMOS voltage references for Sub-1 V applications." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2014. http://hdl.handle.net/10183/107131.

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Referências de tensão integradas sempre foram um bloco fundamental de qualquer sistema eletrônico e um importante tópico de pesquisa que tem sido estudado extensivamente nos últimos 50 anos. Uma tensão de referência é um circuito que provê uma tensão estável com baixa sensibilidade a variações em temperatura, alimentação, carga, características do processo de fabricação e tensões mecânicas de encapsulamento. Elas são normalmente implementadas através da soma ponderada de dois fenômenos físicos diferentes, com comportamentos em temperatura opostos. Normalmente, a tensão térmica, relacionada à c
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Silva, João Gonçalo Clemente da. "Project of a bandgap voltage reference and a temperature sensor for "energy harvest" systems." Master's thesis, Faculdade de Ciências e Tecnologia, 2013. http://hdl.handle.net/10362/11330.

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Dissertação para obtenção do Grau de Mestre em Engenharia Electrotécnica e Computadores<br>The objective of this thesis is to study the behaviour of a bandgap voltage reference and develop it in order to be more efficient than the existing ones. In this case having applicability in energy harvest, the main approach for this circuit is to reduce the power dissipation and at the same time guarantee a stable of the reference voltage. This can be achieved through the utilization of MOS transistors which can work with a lower voltage then bipolar transistors. The reference voltage circuit pre
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Digvadekar, Ashish A. "A sub 1 V bandgap reference circuit /." Online version of thesis, 2005. https://ritdml.rit.edu/dspace/handle/1850/2595.

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Kadaňka, Petr. "Návrh nízkošumové Band Gap reference v BCD procesu." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2013. http://www.nusl.cz/ntk/nusl-220280.

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This diploma thesis focuses on noise analysis of different integrated circuits used for generating temperature stable reference voltage. All noise contributions are studied separately and there is shown a way of their minimization. Circuit using external capacitor with pre-charging system is chosen as the best solution. Output noise of all analyzed circuits is compared and characteristics of final band-gap reference are summarized at the end of the work.
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Caicedo, Jhon Alexander Gomez. "CMOS low-power threshold voltage monitors circuits and applications." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2016. http://hdl.handle.net/10183/144080.

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Um monitor de tensão de limiar (VT0) é um circuito que, idealmente, entrega o valor do VT0 como uma tensão na saída, para uma determinada faixa de temperatura, sem a necessidade de polarização externa, configurações paramétricas, ajuste de curvas ou qualquer cálculo subsequente. Estes circuitos podem ser usados em sensores de temperatura, referências de tensão e corrente, dosímetros de radiação e outras aplicações, uma vez que a dependência do VT0 nas condições de operação é um aspecto bem modelado. Além disso, estes circuitos podem ser utilizados para monitoramento de processos de fabricação
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Chen, Shin-Liang, and 陳信良. "Temperature and supply voltage independent current reference and voltage reference." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/07939159195316351904.

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碩士<br>北台科學技術學院<br>機電整合研究所<br>93<br>This paper presents two kinds of current references which are insensitive to supply voltage and without using resistors. The first current reference is composed of a positive supply voltage coefficient circuit and a negative supply voltage coefficient circuit. The positive supply voltage coefficient circuit exhibits the characteristic that the output current will increase as the supply voltage rises. However, the negative supply voltage coefficient circuit possesses the characteristic that the output current will decrease as the supply voltage rises. By combi
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Chang, Ting-Wei, and 張庭瑋. "CMOS current reference and voltage reference design." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/53278481139150247466.

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碩士<br>北台科學技術學院<br>機電整合研究所<br>94<br>This paper presents some new circuits including CMOS circuit reference and voltage reference. The architecture of the current references is produced not only by adding a positive supply voltage coefficient current reference and a negative supply voltage coefficient current reference to cancel out the supply voltage variations but also by adding a positive temperature coefficient current reference and a negative temperature coefficient current reference to cancel out the temperature variation. About the negative supply voltage coefficient current reference, we
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Cheng, Chin-Hung, and 鄭欽鴻. "Bandgap Reference Voltage Generator." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/10794634026978236467.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>92<br>Precision voltage reference plays an important role in modern integrated circuits systems. It can produce a stable reference voltage insensitive to the variations of supply voltage and temperature. Voltage references are widely adopted in many integrated circuits, such as A/D or D/A converters, operational amplifiers, and linear regulators. They are used for defining input/output voltage range, biasing current source of differential pairs, and providing a comparison reference for comparators, etc. 　　The objective of this thesis is to design a bandgap reference
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Liu, Chzung-Tai, and 劉宗泰. "The study of low voltage bandgap voltage reference circuit." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/37524136168903290293.

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Huang, Kuei-Chen, and 黃癸禎. "Tempeature-Stable Voltage Reference, Transconductor, and Voltage-Controlled Oscillator." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/80295709853083861334.

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碩士<br>國立彰化師範大學<br>工業教育學系<br>88<br>In the recent years, small size, light weight, and reliable operation in any environment have become the basic requirement in the electronic products such as personal communication systems and notebooks. But smaller feature sizes, higher packing density and rising power consumption lead to dramatic temperature increases in current high-performance VLSI circuits. To achieve stable performance of circuits, we should consider the influence of the temperature variation in the circuit design. In this thesis, we focus on the performance of the voltage reference, tra
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Hsu, Kang-Yu, and 徐康禹. "Current Mode Bandgap Voltage Reference." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/xxdacb.

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碩士<br>逢甲大學<br>電機工程所<br>90<br>The objective of this thesis is to design a bandgap voltage reference that can be operated in the range from 3.3V to 5V. The main work is to design a circuit that utilizes a PTAT (proportional to absolute temperature) to compensate the negative temperature coefficient resulting from BJT. The ordinary bandgap voltage reference requires an operational amplifier to stabilize the output voltage. As a result, the circuit will consequently consume considerable area and power dissipation. To circumvent these problems, we propose a current mode bandgap voltage reference, w
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Wu, Yi-Ping, and 吳一平. "Low Temperature-Coefficient Reference Voltage." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/pswyun.

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碩士<br>國立虎尾科技大學<br>電子工程系碩士班<br>103<br>This thesis is related to the design of cascade low temperature-coefficient reference voltage. The design principle is using both the positive and the negative temperature-coefficient parameters in BJT to compensate each other, and then a zero temperature-coefficient output reference voltage can be achieved. Two different circuit architectures have been simulated and discussed. As compared with the existed reference voltage circuits, the proposed circuits benefit from simpler circuit architecture, less chip area, and also there are no operational amplifiers
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Chia, Jr-Yung, and 賈志勇. "Micro Power Low Voltage Bandgap Reference." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/09338594754044322158.

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碩士<br>中原大學<br>電子工程研究所<br>94<br>Abstract Three micro power low voltage bandgap references are presented. These complete designs were simulated and laid out in a standard digital 0.18-µm 1P6M 1.8V CMOS process and operated at 1.5V power supply. A micro power folded cascode operational transconductance amplifier is also presented for these micro power bandgap references. A micro power bandgap voltage reference uses a micro power amplifier to keep a balance condition, and provides a 1.2086V 2.3mV bandgap voltage, a temperature coefficient of 48.7 ppm/℃ over a temperature range from 0 to 60℃ fro
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Chiang, Tzung-Yin, and 江宗殷. "Temperature-compensated CMOS voltage reference circuit." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/07003708814603618036.

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碩士<br>國立清華大學<br>工程與系統科學系<br>93<br>Reference circuits have been studying for many years. Following the vigorous development of portable electronic products, integrated circuits with low voltage and small area have become the core part of the recent research. Parasitic vertical bipolar junction transistors are commonly used in CMOS voltage reference circuits for a better stability. Recently, MOS reference circuits have been used to replace BJT ones in order to reduce the chip area and supply voltage. Whether BJT or MOS is utilized, the problem that resistances parallelizing on either side of BJT
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Chen, Suheng. "Low-power switched capacitor voltage reference." 2009. http://etd.utk.edu/2009/Spring2009Dissertations/ChenSuheng.pdf.

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Liao, Jia-Zheng, and 廖家正. "Design of A CMOS Reference Voltage." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/3h6nk8.

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碩士<br>國立虎尾科技大學<br>電子工程系碩士班<br>101<br>In this thesis, a CMOS differential-mode reference voltage circuit has been proposed. By properly using the positive and negative temperature coefficient parameters, a zero temperature-coefficient can be achieved. The proposed circuits are based on the traditional bandgap voltage reference circuit architecture with an additional current mirror and a proportional-to-absolute-temperature current source which is composed of current mirrors. As compared with the existed differential-mode reference voltage circuit, the proposed circuit does not need an operation
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Shih, Jia-Hao, and 施家豪. "Design of Low-Power Reference Voltage." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/q3kxxf.

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碩士<br>國立虎尾科技大學<br>電子工程系碩士班<br>101<br>In this thesis, two low-power differential-mode reference voltage circuits have been proposed. The design principle is based on the low-power dissipation characteristic and the exponential relationship between the voltage and the current of the MOSFET in sub-threshold region, When the NMOS transistor is operating in the sub-threshold region, appropriately adjust the positive and negative temperature coefficients, a zero temperature coefficient reference voltage circuit can be realized. As compared with the existed differential mode reference voltage circuit
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Ho, Guan-Ru, and 何官儒. "Design of Multi-Output Reference Voltage." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/6satz3.

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碩士<br>國立虎尾科技大學<br>電子工程系碩士班<br>103<br>This thesis is related to the design of multi-output reference voltage. The design principle is using both the positive and the negative temperature-coefficient parameters in BJT to compensate each other, and then a zero temperature-coefficient output reference voltage can be achieved. Two different circuit architectures have been simulated and discussed. As compared with the existed reference voltage circuits, the proposed circuits benefit from simpler circuit architecture, less chip area, and lower temperature-coefficient. Detailed design principle has be
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Mastovich, Stefan Noel. "A voltage reference using a temperature-dependent current to bias a junction diode." 2012. http://hdl.handle.net/2152/19702.

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Bandgap voltage-reference circuits generate an appropriate amount of a voltage that varies proportionately to absolute temperature (called PTAT), to cancel the complementary to absolute temperature voltage variation (known as CTAT) of a current biased p-n junction diode so that the sum of the two voltages remains constant with respect to temperature. The bandgap voltage of Silicon is approximately 1.1V. It is inconveniently large to generate and use in short-channel circuits where the supply voltage is limited 1.2V. So the idea presented here is to maintain a constant reference voltage of arou
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Lee, Chia-Yu, and 李佳祐. "A Low-Voltage Low-Temperature-Coefficient CMOS Bandgap Voltage Reference Generator." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/60462464118919911604.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>94<br>Voltage references play an important role in modern integrated circuits systems. They are widely apdopted in many integrated circuits, such as A/D or D/A converters, power-management system, operational amplifiers, and linear regulators. They are used for defining input/output voltage range, baising current source of differential pairs, and providing a comparison reference for comparators. A precision voltage reference must be, inherently, well-defined and insensitive to temperature, power supply and load variations. The objective of this thesis is to desi
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吳榮田. "Standard CMOS Low Operating Voltage Linear Type Bandgap Reference Voltage Generator." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/35770322350884476361.

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碩士<br>國立臺灣大學<br>電機工程學研究所<br>90<br>For many modern analog circuits, it is very important to generate a power supply voltage and temperature independent reference voltage to improve the performance of circuits such as accuracy, reliability, yield rate and so on. In the past the linear type CMOS bandgap reference voltage generator was chosen as a reliable reference voltage source for many years because of its working very well. But the traditional linear type CMOS bandgap reference voltage generator cannot work properly when the power supply voltage is lower than 2V. Due to
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Chang, Wuchang, and 張武昌. "Design of low-power band-gap voltage reference circuits for low supply voltages." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/63027796637562889403.

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碩士<br>國立中興大學<br>電機工程學系<br>90<br>Reference voltage generators are widely used in many applications from analog circuit to mixed-signal circuits such as ADC, DAC, DRAM and flash memories. These structures are required to provide a stable voltage reference with a low sensitivity to temperature and supply voltage. One of the most popular architecture is the band-gap reference (BGR). Due to the need of battery-operated systems for portability, low supply voltages and low power consumption will be the trends in future VLSI products. Two new band-gap reference (BGR) circuits operated at low supply vo
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Yang, Julian, and 楊宙穎. "CMOS Temperature Sensor and Bandgap Voltage Reference." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/64563h.

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碩士<br>國立交通大學<br>電子物理系所<br>92<br>A temperature sensing system with digital output consists of a front part and a rear part. The front part includes temperature sensor and bandgap voltage reference. The rear part is an analog to digital converter (ADC). In CMOS technology, the BJT device is used as the basic temperature sensor. The base-emitter voltage (VEB) can be approximated as a linear function of temperature. By using it, temperature sensor and bandgap voltage reference can be accomplished. The simulation of the front part using a standard TSMC 0.25um 1P5M CMOS process is presented in the t
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Yuan, Lin Po, and 林伯原. "Design of band-gap reference voltage sources." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/32744506123103115205.

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碩士<br>國立海洋大學<br>電機工程學系<br>91<br>Almost all of the digital logic circuits, analog circuits and mixed-signal circuits need reference voltage devices. A stable built-in reference voltage sources become indispensable for most high performance circuits. Bandgap reference voltage generator circuit is the most popular reference voltage source. It is extensively used in analog-to-digital converter, digital-to-analog, voltage rectifier, and measurement system circuits, since it is quite insensitivity to temperature variation (i.e. low sensitivity of output voltage varying with temperature) and high rej
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Cai, Bo-Rong, and 蔡柏戎. "Design And application Of CMOS Reference Voltage." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/4r55n9.

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碩士<br>國立虎尾科技大學<br>電子工程系碩士班<br>102<br>In this thesis, a differential-mode reference voltage circuit with cascode architecture has been proposed. The design principle is using both the positive and the negative temperature coefficient parameters in BJT to compensate each other, and then a zero temperature coefficient output reference voltage can be achieved. Circuit simulations has used two different circuit architectures to realize the reference voltage, and both the advantages and disadvantages have been discussed. As compared with the existed differential mode reference voltage circuits, the
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Wang, Bo-Lun, and 王柏倫. "Design of CMOS Low-Power Reference Voltage." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/zwuwk7.

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碩士<br>國立虎尾科技大學<br>電子工程系碩士班<br>105<br>In this thesis, three Low-Power CMOS Reference Voltage circuits have been presented. The first circuit is with single-ended output voltage, and the second and third circuit provides multiple output voltages. In the proposed circuits, MOS transistors are biased to operate in the weak inversion region to achieve the low-power consumption characteristics. Appropriate combination of the positive and the negative temperature coefficients of the voltages, the zero-temperature coefficient reference voltage can be achieved. As compared with the existed circuits, th
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Wang, Tien-Hsin, and 汪天心. "Improved Low-Power Reference Voltage Circuit Design." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/82yvwp.

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碩士<br>國立虎尾科技大學<br>電子工程系碩士班<br>105<br>In this thesis, four improved Low-Power Reference Voltage Circuits have been proposed. The first circuit used the positive and negative temperature coefficients of the BJT and MOSFET, respectively, to generate the required reference voltage. The second circuit used the positive and negative temperature coefficients of the MOSFET to reach the zero-temperature coefficient reference voltage. The third circuit generated the zero-temperature coefficient reference voltage first and then feedback to the bias circuit to provide the necessary bias currents. The last
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