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Dissertations / Theses on the topic 'Resistive Defects'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Medeiros, Guilherme Cardoso. "Development of a test methodology for FinFET-Based SRAMs." Pontif?cia Universidade Cat?lica do Rio Grande do Sul, 2017. http://tede2.pucrs.br/tede2/handle/tede/7647.

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Submitted by Caroline Xavier (caroline.xavier@pucrs.br) on 2017-09-11T13:09:26Z No. of bitstreams: 1 DIS_GUILHERME_CARDOSO_MEDEIROS_COMPLETO.pdf: 10767866 bytes, checksum: f8ce0a0593916dec149c9417c21ff36e (MD5)<br>Made available in DSpace on 2017-09-11T13:09:26Z (GMT). No. of bitstreams: 1 DIS_GUILHERME_CARDOSO_MEDEIROS_COMPLETO.pdf: 10767866 bytes, checksum: f8ce0a0593916dec149c9417c21ff36e (MD5) Previous issue date: 2017-08-17<br>Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior - CAPES<br>Miniaturiza??o tem sido adotada como o principal objetivo da ind?stria de Circuitos Integr

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2

Stöver, Julian. "Defect related transport mechanism in the resistive switching materials SrTiO3 and NbO2." Doctoral thesis, Humboldt-Universität zu Berlin, 2021. http://dx.doi.org/10.18452/23122.

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Diese Arbeit beschäftigt sich mit den elektrischen Eigenschaften der resistiven Schaltmaterialien SrTiO3 und NbO2. Im ersten Teil werden NbO2 (001)-Dünnschichten untersucht. Bisher sind die für NbO2-Dünnschichten in der isolierenden Phase gemessenen spezifische Widerstände um einen Faktor von 200 niedriger als der in NbO2-Einkristallen gemessene 10 kΩ cm Widerstand. In dieser Arbeit wird der spezifische Widerstand von NbO2-Dünnschichten auf 945 Ω cm erhöht. Es wird gezeigt, dass leitfähige Perkolationspfade entlang der Korngrenzen für die Abnahme des spezifischen Widerstandes verantwortlich

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3

Wicklein, Sebastian [Verfasser]. "Defect Engineering of SrTiO3 thin films for resistive switching applications / Sebastian Wicklein." Kiel : Universitätsbibliothek Kiel, 2014. http://d-nb.info/1054635986/34.

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4

Traoré, Boubacar. "Etude des cellules mémoires résistives RRAM à base de HfO2 par caractérisation électrique et simulations atomistiques." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT037/document.

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La mémoire NAND Flash représente une part importante dans le marché des circuits intégrés et a bénéficié de la traditionnelle miniaturisation de l’industrie des sémiconducteurs lui permettant un niveau d’intégration élevé. Toutefois, cette miniaturisation semble poser des sérieux problèmes au-delà du noeud 22 nm. Dans un souci de dépasser cette limite, des solutions mémoires alternatives sont proposées parmi lesquelles la mémoire résistive (RRAM) se pose comme un sérieux candidat pour le remplacement de NAND Flash. Ainsi, dans cette thèse nous essayons de répondre à des nombreuses questions ou

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5

Stöver, Julian [Verfasser]. "Defect related transport mechanism in the resistive switching materials SrTiO3 and NbO2 / Julian Stöver." Berlin : Humboldt-Universität zu Berlin, 2021. http://d-nb.info/1239644779/34.

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6

Li, Hongfei. "Density functional simulations of defect behavior in oxides for applications in MOSFET and resistive memory." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/274924.

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Defects in the functional oxides play an important role in electronic devices like metal oxide semiconductor field effect transistors (MOSFETs) and resistive random-access memories (ReRAMs). The continuous scaling of CMOS has brought the Si MOSFET to its physical technology limit and the replacement of Si channel with Ge channel is required. However, the performance of Ge MOSFETs suffers from Ge/oxide interface quality and reliability problems, which originates from the charge traps and defect states in the oxide or at the Ge/oxide interface. The sub-oxide layers composed of GeII states at the

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7

Schie, Marcel [Verfasser], Rainer [Akademischer Betreuer] Waser, and Souza Roger A. [Akademischer Betreuer] De. "Defect interactions and diffusion in resistive switching oxides / Marcel Schie ; Rainer Waser, Roger A. De Souza." Aachen : Universitätsbibliothek der RWTH Aachen, 2019. http://d-nb.info/122540178X/34.

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8

Martins, Marco T?lio Gon?alves. "Avalia??o de defeitos resistivos de manufatura em SRAMs frente ao fen?meno de NBTI." Pontif?cia Universidade Cat?lica do Rio Grande do Sul, 2016. http://tede2.pucrs.br/tede2/handle/tede/7672.

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Submitted by PPG Engenharia El?trica (engenharia.pg.eletrica@pucrs.br) on 2017-10-03T14:30:54Z No. of bitstreams: 1 dissertacao_Marco_tulio.pdf: 5515221 bytes, checksum: 0531f41d66bffa4a34ad4958a41c2d61 (MD5)<br>Approved for entry into archive by Caroline Xavier (caroline.xavier@pucrs.br) on 2017-10-04T13:10:44Z (GMT) No. of bitstreams: 1 dissertacao_Marco_tulio.pdf: 5515221 bytes, checksum: 0531f41d66bffa4a34ad4958a41c2d61 (MD5)<br>Made available in DSpace on 2017-10-04T13:17:57Z (GMT). No. of bitstreams: 1 dissertacao_Marco_tulio.pdf: 5515221 bytes, checksum: 0531f41d66bffa4a34ad4958a41c2d6

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9

Petzold, Stefan [Verfasser], Lambert [Akademischer Betreuer] Alff, and Leopoldo [Akademischer Betreuer] Molina-Luna. "Defect Engineering in Transition Metal Oxide-based Resistive Random Access Memory / Stefan Petzold ; Lambert Alff, Leopoldo Molina-Luna." Darmstadt : Universitäts- und Landesbibliothek Darmstadt, 2020. http://d-nb.info/1204200912/34.

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10

Lavratti, Felipe de Andrade Neves. "Detecção de defeitos do tipo Resistive-Open em SRAM com o uso de lógica comparadora de vizinhança." Pontifícia Universidade Católica do Rio Grande do Sul, 2012. http://hdl.handle.net/10923/3188.

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Made available in DSpace on 2013-08-07T18:53:24Z (GMT). No. of bitstreams: 1 000443096-Texto+Completo-0.pdf: 6133830 bytes, checksum: 908c7fe6bab5b7e729af71ec9803c982 (MD5) Previous issue date: 2012<br>The world we live today is very dependent of the technology advance and the Systemson- Chip (SoC) are one of the most important actors of this advance. As a consequence, the Moore's law has been outperformed due to this strong demand on the SoCs for growth, so that new silicon technologies has emerged along with new fault models that decreased the reliability of these devices. SoCs built using

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11

Lavratti, Felipe de Andrade Neves. "Detec??o de defeitos do tipo Resistive-Open em SRAM com o uso de l?gica comparadora de vizinhan?a." Pontif?cia Universidade Cat?lica do Rio Grande do Sul, 2012. http://tede2.pucrs.br/tede2/handle/tede/3045.

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Made available in DSpace on 2015-04-14T13:56:25Z (GMT). No. of bitstreams: 1 443096.pdf: 6133830 bytes, checksum: 908c7fe6bab5b7e729af71ec9803c982 (MD5) Previous issue date: 2012-03-30<br>The world we live today is very dependent of the technology advance and the Systemson- Chip (SoC) are one of the most important actors of this advance. As a consequence, the Moore's law has been outperformed due to this strong demand on the SoCs for growth, so that new silicon technologies has emerged along with new fault models that decreased the reliability of these devices. SoCs built using Very Deep Sub

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12

Sankaramangalam, Ulhas Sharath [Verfasser], Lambert [Akademischer Betreuer] Alff, Thomas [Akademischer Betreuer] Schröder, Wolfgang [Akademischer Betreuer] Donner, and Klaus [Akademischer Betreuer] Hofmann. "Defect Engineering in HfO2/TiN-based Resistive Random Access Memory (RRAM) Devices by Reactive Molecular Beam Epitaxy / Sharath Sankaramangalam Ulhas ; Lambert Alff, Thomas Schröder, Wolfgang Donner, Klaus Hofmann." Darmstadt : Universitäts- und Landesbibliothek Darmstadt, 2018. http://d-nb.info/1156462061/34.

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13

Lewin, Martin [Verfasser], Thomas [Akademischer Betreuer] Taubner, and Matthias [Akademischer Betreuer] Wuttig. "Using infrared nano-spectroscopy to analyze the influence of defects on the local electronic properties in resistively switching oxides and chalcogenides / Martin Lewin ; Thomas Taubner, Matthias Wuttig." Aachen : Universitätsbibliothek der RWTH Aachen, 2020. http://d-nb.info/1216508607/34.

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14

Berger, Michael Andrew. "How resisting democracies can defeat substate terrorism : formulating a theoretical framework for strategic coercion against nationalistic substate terrorist organizations." Thesis, St Andrews, 2010. http://hdl.handle.net/10023/889.

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15

Hering, Maria. "Überschlagsverhalten von Gas-Feststoff-Isoliersystemen unter Gleichspannungsbelastung." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-200879.

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Gasisolierte Systeme im Gleichspannungsbetrieb vereinen für Anwendungen moderner Energieübertragung die Forderungen nach kleinräumigen Anlagen und verlustarmem Energietransport über große Entfernungen. Für einen zuverlässigen und sicheren Betrieb muss das Verhalten der eingesetzten Gas-Feststoff-Isolierung im technologischen System bis an die Grenzen des Isolationsvermögens bekannt sein. Gegenstand der vorliegenden Arbeit ist deshalb das Überschlagsverhalten von Gas-Feststoff-Isoliersystemen unter Gleichspannungsbelastung. Dabei stehen zwei wesentliche Einflussfaktoren im Vordergrund: die Temp

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16

Ferreira, António Álvaro Labrincha. "Materiais à base de Sr(Ti,Nb)O3 para sensores lambda." Doctoral thesis, Universidade de Aveiro, 2015. http://hdl.handle.net/10773/15665.

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Doutoramento em Ciência e Engenharia de Materiais<br>Os sensores lambda resistivos possuem as vantagens de simplicidade e menor custo relativamente à utilização generalizada de sensores potenciométricos de oxigénio. Nesse sentido, os titanatos de estrôncio têm sido alvo de diversos estudos. Para a produção de uma relação inequívoca entre a condutividade destes materiais e a pressão parcial de oxigénio é necessária a adição de um dopante dador que suprime a condução eletrónica do tipo-p na região de pressões parciais de oxigénio próximas de ar. Contudo, a adição de um dopante dador produ

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17

Huguenin, Denis. "Effets induits par irradiation électronique dans les alliages austénitiques Fe-Ni-Cr." Grenoble 1, 1989. http://www.theses.fr/1989GRE10034.

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18

Engelke, Piet [Verfasser]. "Resistive bridging faults : defect-oriented modeling and efficient testing / vorgelegt von Piet Engelke." 2009. http://d-nb.info/994030819/34.

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19

"Defect Induced Aging and Breakdown in High-k Dielectrics." Doctoral diss., 2018. http://hdl.handle.net/2286/R.I.49036.

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abstract: High-k dielectrics have been employed in the metal-oxide semiconductor field effect transistors (MOSFETs) since 45 nm technology node. In this MOSFET industry, Moore’s law projects the feature size of MOSFET scales half within every 18 months. Such scaling down theory has not only led to the physical limit of manufacturing but also raised the reliability issues in MOSFETs. After the incorporation of HfO2 based high-k dielectrics, the stacked oxides based gate insulator is facing rather challenging reliability issues due to the vulnerable HfO2 layer, ultra-thin interfacial SiO2 layer,

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20

Sankaramangalam, Ulhas Sharath. "Defect Engineering in HfO2/TiN-based Resistive Random Access Memory (RRAM) Devices by Reactive Molecular Beam Epitaxy." Phd thesis, 2018. https://tuprints.ulb.tu-darmstadt.de/7258/1/Thesis_SU_V16_ULB.pdf.

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Recently, there has been huge interest in emerging memory technologies, spurred by the ever increasing demand for storage capacities in various applications like Internet of Things (IoT), Big Data, etc. CMOS based flash memory, the current mainstay of the memory technology, has been able to increase its density by scaling down to a 16 nm node and further implementation of 3D architectures. However, flash memory is expected to soon run into disadvantage due to challenges in further scaling. Therefore, extensive efforts are being made towards developing new devices for the next generation of non

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21

Hering, Maria. "Überschlagsverhalten von Gas-Feststoff-Isoliersystemen unter Gleichspannungsbelastung." Doctoral thesis, 2015. https://tud.qucosa.de/id/qucosa%3A29421.

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Gasisolierte Systeme im Gleichspannungsbetrieb vereinen für Anwendungen moderner Energieübertragung die Forderungen nach kleinräumigen Anlagen und verlustarmem Energietransport über große Entfernungen. Für einen zuverlässigen und sicheren Betrieb muss das Verhalten der eingesetzten Gas-Feststoff-Isolierung im technologischen System bis an die Grenzen des Isolationsvermögens bekannt sein. Gegenstand der vorliegenden Arbeit ist deshalb das Überschlagsverhalten von Gas-Feststoff-Isoliersystemen unter Gleichspannungsbelastung. Dabei stehen zwei wesentliche Einflussfaktoren im Vordergrund: die Temp

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