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Journal articles on the topic 'Resistive Random Access Memory'

Author: Grafiati

Published: 4 June 2021

Last updated: 20 June 2025

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1

Yu, Shimeng. "Resistive Random Access Memory (RRAM)." Synthesis Lectures on Emerging Engineering Technologies 2, no. 5 (2016): 1–79. http://dx.doi.org/10.2200/s00681ed1v01y201510eet006.

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2

Huang, Yong, Zihan Shen, Ye Wu, et al. "Amorphous ZnO based resistive random access memory." RSC Advances 6, no. 22 (2016): 17867–72. http://dx.doi.org/10.1039/c5ra22728c.

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3

Nam, Ki-Hyun, and Chung-Hyeok Kim. "Improving the Reliability by Straight Channel of As2Se3-based Resistive Random Access Memory." Journal of the Korean Institute of Electrical and Electronic Material Engineers 29, no. 6 (2016): 327–31. http://dx.doi.org/10.4313/jkem.2016.29.6.327.

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4

Chen, Frederick T., Yu-Sheng Chen, Heng-Yuan Lee, et al. "Access Strategies for Resistive Random Access Memory (RRAM)." ECS Transactions 44, no. 1 (2019): 73–78. http://dx.doi.org/10.1149/1.3694298.

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5

Wang, GuoMing, ShiBing Long, MeiYun Zhang, et al. "Operation methods of resistive random access memory." Science China Technological Sciences 57, no. 12 (2014): 2295–304. http://dx.doi.org/10.1007/s11431-014-5718-7.

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6

LIU, Qi, ShiBing LONG, Ming LIU, and HangBing LV. "Research progresses of resistive random access memory." SCIENTIA SINICA Physica, Mechanica & Astronomica 46, no. 10 (2016): 107311. http://dx.doi.org/10.1360/sspma2016-00293.

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7

Awais, Muhammad, Feng Zhao, and Kuan Yew Cheong. "Bio-Organic Based Resistive Switching Random-Access Memory." Solid State Phenomena 352 (October 30, 2023): 85–93. http://dx.doi.org/10.4028/p-tbxv2r.

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A non-volatile memory is a solid-state device that can retain data even power supply is terminated. It is an essential data storage device that serves as a backbone for the advancement of Internet-of-Things. There are various emerging non-volatile memory technologies in different technology-readiness levels, to replace the existing technologies with limited memory density, operating speed, power consumption, manufacturability, and data security. Of the emerging technologies, resistive switching technology is one of the most promising next generation non-volatile random-access memories. The fundamental working principle of the resistive-switching random-access memory (ReRAM) is based on memristor characterises with metal-insulator-metal stacking structure. Same as other solid-state devices, ReRAM is also facing issue of electronic waste when the memory device is discarded. To overcome this issue, bio-organic materials as green and sustainable engineering materials have been used to fabricate ReRAM. In this review, development of bio-organic based ReRAM, in particular the resistive switching mechanisms and device performance, have been discussed and challenging and future applications of this memory have been provided.

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8

Fetahovic, Irfan, Edin Dolicanin, Djordje Lazarevic, and Boris Loncar. "Overview of radiation effects on emerging non-volatile memory technologies." Nuclear Technology and Radiation Protection 32, no. 4 (2017): 381–92. http://dx.doi.org/10.2298/ntrp1704381f.

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In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments.

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9

Nam, Ki-Hyun, Jang-Han Kim, Won-Ju Cho, Chung-Hyeok Kim, and Hong-Bay Chung. "Resistive Switching in Amorphous GeSe-Based Resistive Random Access Memory." Journal of Nanoscience and Nanotechnology 16, no. 10 (2016): 10393–96. http://dx.doi.org/10.1166/jnn.2016.13167.

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10

Fatheema, Jameela, Tauseef Shahid, Mohammad Ali Mohammad, et al. "A comprehensive investigation of MoO3 based resistive random access memory." RSC Advances 10, no. 33 (2020): 19337–45. http://dx.doi.org/10.1039/d0ra03415k.

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The bipolar resistive switching of molybdenum oxide is deliberated while molybdenum and nickel are used as bottom and top electrodes, respectively, to present a device with resistive random access memory (RRAM) characteristics.

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11

Cheong, Kuan Yew, Hooi Ling Lee, and Feng Zhao. "Natural Organic Pectin Polysaccharide Based Resistive Random Access Memory." ECS Meeting Abstracts MA2024-02, no. 20 (2024): 1779. https://doi.org/10.1149/ma2024-02201779mtgabs.

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Nowadays, non-volatile memory technologies have been widely applied in different areas. Of these memory technologies, non-volatile resistive random access memory (ReRAM) is attractive because of its simple device architecture and fabrication process, high scalability and data density, good performances in terms of switching speed, high power efficiency and reasonably wide memory window. In order to address the issues of disposable and degradation of electronic waste by typical ReRAM with the active layer made of inorganic oxide materials and fossil-fuel based polymeric materials, a green and sustainable strategy has been adopted in producing ReRAM by using natural organic-based materials based on protein and carbohydrate, such as honey, fructose, aloe vera, etc. Among these materials, pectin-polysaccharide thin film has demonstrated promising resistive switching characteristics. The two ranges of pectin concentrations that have been investigated are ³5 mg/ml and £1.5 mg/ml, and it showed that pectin with concentration <1.5 mg/ml reveals a higher ON/OFF ratio. However, the resistive switching characteristics with pectin concentration between 1.5 mg/ml and 5 mg/ml have yet been explored and reported. In this work, pectin with concentrations of 1.5~5 mg/ml were prepared from pectin-polysaccharide solution into the active switching layer, and ReRAM devices with such pectin resistive switching layer were fabricated. The pectin-polysaccharide solution, pectin resistive film, and ReRAM devices were systematically investigated. Surface tension and contact angle of pectin-polysaccharide precursor solutions as a function of pectin concentration on the substrate were measured by a goniometer. Surface topography of solidified thin films was characterized by an atomic force microscope (AFM) and a field-emission scanning electron microscope (FE-SEM). Chemical functional groups of the pectin-polysaccharide precursor solutions and solidified thin films were examined by a Fourier transform infrared (FTIR) spectroscopy. The resistive switching behaviors were characterized and compared by electrical measurement. The results show that 4 mg/ml recorded the highest ON/OFF ratio compared to ever reported values, as well as desirable memory window, non-volatility in retention, and stability over 100 cycles. This study proves that pectin-polysaccharide is a promising green and sustainable bio-organic material for non-volatile ReRAM for electronic applications such as in emerging neuromorphic computing systems.

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12

Kim, Hyojung, Ji Su Han, Sun Gil Kim, Soo Young Kim, and Ho Won Jang. "Halide perovskites for resistive random-access memories." Journal of Materials Chemistry C 7, no. 18 (2019): 5226–34. http://dx.doi.org/10.1039/c8tc06031b.

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Halide-perovskites-based resistive random-access memory (ReRAM) devices are emerging as a new class of revolutionary data storage devices because the switching material—halide perovskite—has received considerable attention in recent years owing to its unique and exotic electrical, optical, and structural properties.

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13

Tang, Peng, Junlong Chen, Tian Qiu, et al. "Recent Advances in Flexible Resistive Random Access Memory." Applied System Innovation 5, no. 5 (2022): 91. http://dx.doi.org/10.3390/asi5050091.

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Flexible electronic devices have received great attention in the fields of foldable electronic devices, wearable electronic devices, displays, actuators, synaptic bionics and so on. Among them, high-performance flexible memory for information storage and processing is an important part. Due to its simple structure and non-volatile characteristics, flexible resistive random access memory (RRAM) is the most likely flexible memory to achieve full commercialization. At present, the minimum bending radius of flexible RRAM can reach 2 mm and the maximum ON/OFF ratio (storage window) can reach 108. However, there are some defects in reliability and durability. In the bending process, the cracks are the main cause of device failure. The charge trap sites provided by appropriate doping or the use of amorphous nanostructures can make the conductive filaments of flexible RRAM steadier. Flexible electrodes with high conductivity and flexible dielectric with stable storage properties are the main development directions of flexible RRAM materials in the future.

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14

Zheng, K., J. L. Zhao, K. S. Leck, K. L. Teo, E. G. Yeo, and X. W. Sun. "A ZnTaOx Based Resistive Switching Random Access Memory." ECS Solid State Letters 3, no. 7 (2014): Q36—Q39. http://dx.doi.org/10.1149/2.0101407ssl.

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15

Li, YingTao, ShiBing Long, Qi Liu, HangBing Lü, Su Liu, and Ming Liu. "An overview of resistive random access memory devices." Chinese Science Bulletin 56, no. 28-29 (2011): 3072–78. http://dx.doi.org/10.1007/s11434-011-4671-0.

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16

Fryauf, David M., Kate J. Norris, Junce Zhang, Shih‐Yuan Wang, and Nobuhiko P. Kobayashi. "Titanium oxide vertical resistive random‐access memory device." Micro & Nano Letters 10, no. 7 (2015): 321–23. http://dx.doi.org/10.1049/mnl.2015.0021.

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17

Lastras-Montaño, Miguel Angel, and Kwang-Ting Cheng. "Resistive random-access memory based on ratioed memristors." Nature Electronics 1, no. 8 (2018): 466–72. http://dx.doi.org/10.1038/s41928-018-0115-z.

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18

Shi, Qiuwei, Jiangxin Wang, Izzat Aziz, and Pooi See Lee. "Stretchable and Wearable Resistive Switching Random‐Access Memory." Advanced Intelligent Systems 2, no. 7 (2020): 2000007. http://dx.doi.org/10.1002/aisy.202000007.

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19

Chen, Shih-Cheng, Ting-Chang Chang, Shih-Yang Chen, et al. "Bipolar resistive switching of chromium oxide for resistive random access memory." Solid-State Electronics 62, no. 1 (2011): 40–43. http://dx.doi.org/10.1016/j.sse.2010.12.014.

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20

Arshad, Naila, Muhammad Sultan Irshad, Misbah Sehar Abbasi, et al. "Green thin film for stable electrical switching in a low-cost washable memory device: proof of concept." RSC Advances 11, no. 8 (2021): 4327–38. http://dx.doi.org/10.1039/d0ra08784j.

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21

Nam, Ki-Hyun, Jang-Han Kim, and Hong-Bay Chung. "Operating Characteristics of Amorphous GeSe-based Resistive Random Access Memory at Metal-Insulator-Silicon Structure." Journal of the Korean Institute of Electrical and Electronic Material Engineers 29, no. 7 (2016): 400–403. http://dx.doi.org/10.4313/jkem.2016.29.7.400.

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22

Wan, Weier, Rajkumar Kubendran, Clemens Schaefer, et al. "A compute-in-memory chip based on resistive random-access memory." Nature 608, no. 7923 (2022): 504–12. http://dx.doi.org/10.1038/s41586-022-04992-8.

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AbstractRealizing increasingly complex artificial intelligence (AI) functionalities directly on edge devices calls for unprecedented energy efficiency of edge hardware. Compute-in-memory (CIM) based on resistive random-access memory (RRAM)1 promises to meet such demand by storing AI model weights in dense, analogue and non-volatile RRAM devices, and by performing AI computation directly within RRAM, thus eliminating power-hungry data movement between separate compute and memory2–5. Although recent studies have demonstrated in-memory matrix-vector multiplication on fully integrated RRAM-CIM hardware6–17, it remains a goal for a RRAM-CIM chip to simultaneously deliver high energy efficiency, versatility to support diverse models and software-comparable accuracy. Although efficiency, versatility and accuracy are all indispensable for broad adoption of the technology, the inter-related trade-offs among them cannot be addressed by isolated improvements on any single abstraction level of the design. Here, by co-optimizing across all hierarchies of the design from algorithms and architecture to circuits and devices, we present NeuRRAM—a RRAM-based CIM chip that simultaneously delivers versatility in reconfiguring CIM cores for diverse model architectures, energy efficiency that is two-times better than previous state-of-the-art RRAM-CIM chips across various computational bit-precisions, and inference accuracy comparable to software models quantized to four-bit weights across various AI tasks, including accuracy of 99.0 percent on MNIST18 and 85.7 percent on CIFAR-1019 image classification, 84.7-percent accuracy on Google speech command recognition20, and a 70-percent reduction in image-reconstruction error on a Bayesian image-recovery task.

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23

Guo, Jie, Xiaofei Cao, Fuhui Wang, et al. "Novel graphdiyne quantum dots for resistive random access memory." 2D Materials 9, no. 2 (2022): 024003. http://dx.doi.org/10.1088/2053-1583/ac5fdd.

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Abstract Graphdiyne (GDY), a rising allotropic form of carbon, exhibits a rich variety of electronic, optical and mechanical properties due to the unique π-conjugated structure. However, the processability of GDY into perovskite composites is a vital yet challenging area for further optimized applications. Herein, we synthesized a novel GDY quantum dots (QDs) via Sonogashira cross-coupling reaction between GDY and anthraquinones. The as-prepared GDY QDs show good solubility with perovskite precursor and the GDY QDs doped perovskite was obtained. The GDY QDs based perovskite resistive random access memory device shows reliable resistive switching behaviour with enhanced ON/OFF ratio of ∼103 and long endurance due to the optimized electrode/dielectric interface, which offers opportunities in electronic and optoelectronic fields.

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24

Yoo, Hyeon Gyun, Seungjun Kim, and Keon Jae Lee. "Flexible one diode–one resistor resistive switching memory arrays on plastic substrates." RSC Adv. 4, no. 38 (2014): 20017–23. http://dx.doi.org/10.1039/c4ra02536a.

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Flexible one diode–one resistor resistive random access memory (RRAM) with 8 × 8 arrays composed of high-performance silicon diodes and a resistive change material for fully functional flexible memory operation.

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25

Chen, Ying-Chen, Yao-Feng Chang, Xiaohan Wu, et al. "Dynamic conductance characteristics in HfOx-based resistive random access memory." RSC Advances 7, no. 21 (2017): 12984–89. http://dx.doi.org/10.1039/c7ra00567a.

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26

Seo, Jung Won, Jae-Woo Park, Keong Su Lim, Ji-Hwan Yang, and Sang Jung Kang. "Transparent resistive random access memory and its characteristics for nonvolatile resistive switching." Applied Physics Letters 93, no. 22 (2008): 223505. http://dx.doi.org/10.1063/1.3041643.

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27

Yang, Fann-Wei, Kai-Huang Chen, Chien-Min Cheng, and Feng-Yi Su. "Bipolar resistive switching properties in transparent vanadium oxide resistive random access memory." Ceramics International 39 (May 2013): S729—S732. http://dx.doi.org/10.1016/j.ceramint.2012.10.170.

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28

Fu, Liping, Sikai Chen, Zewei Wu, et al. "Impact of resistive switching parameters on resistive random access memory crossbar arrays." Modern Physics Letters B 34, no. 12 (2020): 2050115. http://dx.doi.org/10.1142/s0217984920501158.

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Sneak current issue of RRAM-based crossbar array is one of the biggest hindrances for high-density memory application. The integration of an addition selector to each cell is one of the most familiar solutions to avoid this undesired cross-talk issue, and resistive switching parameters would affect on the storage density. This paper investigates the potential impact of different resistive switching parameters on crossbar arrays with one-diode one-resistor (1D1R) and one-selector one-resistor (1S1R) architectures. Results indicate that 1S1R architecture is a more scalable technology for high-density crossbar array than 1D1R, and the storage density of 1D1R- and 1S1R-based crossbar array shows little dependence on resistance values of high-resistance state and low-resistance state, which gives a guideline for choosing appropriate selectors for RRAM crossbar array with specific parameters.

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29

Shafi, K. M., K. Muhammed Shibu, N. K. Sulfikarali, and K. P. Biju. "Sol-Gel Processed ZrO<sub>2</sub> Based Forming-Free Resistive Switching Memory Devices." Materials Science Forum 1048 (January 4, 2022): 198–202. http://dx.doi.org/10.4028/www.scientific.net/msf.1048.198.

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In this work, we fabricated ZrO2 based resistive random access memory by sol-gel spin coating technique and investigated its structural, optical and resistive switching properties. The X-ray diffraction pattern revealed that 400 °C annealed ZrO2 thin film has tetragonal structure. The optical band gap value of ZrO2 thin film obtained was 5.51 eV. The resistive switching behaviour of W/ZrO2/ITO capacitor like structure was studied. It was found that no initial electroforming process required for the device. The fabricated devices show a self-compliance bipolar resistive switching behaviour and have high on off ratio (>102). Our result suggests that solution processed ZrO2 has great potential to develop transparent and flexible resistive random access memory devices.

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30

Huang, Chien-Yuan, Wen Chao Shen, Yuan-Heng Tseng, Ya-Chin King, and Chrong-Jung Lin. "A Contact-Resistive Random-Access-Memory-Based True Random Number Generator." IEEE Electron Device Letters 33, no. 8 (2012): 1108–10. http://dx.doi.org/10.1109/led.2012.2199734.

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31

Koohzadi, Pooria, Mohammad Taghi Ahmadi, Javad Karamdel, and Truong Khang Nguyen. "Graphene band engineering for resistive random-access memory application." International Journal of Modern Physics B 34, no. 18 (2020): 2050171. http://dx.doi.org/10.1142/s0217979220501714.

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Emerging memory technologies promise new memories to store more data at less cost. On the other hand, the scaling of silicon-based chips approached its physical limits. Nonvolatile memory technologies, such as resistive random-access memory (RRAM), are trying to solve this problem. The fundamental study in RRAM devices still needs to be moved further. In this regard, conduction mechanism of RRAM is focused in this study. The RRAM conductance varies considerably depending on the material used in the dielectric layer and selection of electrodes. To formulate the conductance mechanism, new materials with notable conductivity such as graphene oxide (GO) sheets has been employed by researchers. In the GO-based RRAM, pristine of GO due to the presence of sp3-hybridized oxygen functional groups(hydroxyl) leads to electrically insulating layers in the device. However, by applying the voltage, the conductive path can be formed with the redox of GO layer in to graphene. This phenomenon is known as RRAM set process which can be explained due to the conversion of sp3 to sp2 oxygen functionalities, which make the RRAM to move in to the ON state. Also, in this paper, variation of the ON state resistance by the voltage in the nondegenerate mode is described and the reset process by degeneracy variation is reported.

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32

Jo, S. H., and T. Kumar. "(Invited) Resistive Random Access Memory for Storage Class Applications." ECS Transactions 69, no. 3 (2015): 47–50. http://dx.doi.org/10.1149/06903.0047ecst.

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33

Zhou, Feichi, Zheng Zhou, Jiewei Chen, et al. "Optoelectronic resistive random access memory for neuromorphic vision sensors." Nature Nanotechnology 14, no. 8 (2019): 776–82. http://dx.doi.org/10.1038/s41565-019-0501-3.

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34

Xiang, Zhongyuan, and Feng Zhang. "Self‐judgement flip coding for resistive random access memory." Electronics Letters 52, no. 1 (2016): 27–29. http://dx.doi.org/10.1049/el.2015.2332.

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35

Zheng, K., X. W. Sun, J. L. Zhao, et al. "An Indium-Free Transparent Resistive Switching Random Access Memory." IEEE Electron Device Letters 32, no. 6 (2011): 797–99. http://dx.doi.org/10.1109/led.2011.2126017.

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36

Akinaga, Hiroyuki, and Hisashi Shima. "Resistive Random Access Memory (ReRAM) Based on Metal Oxides." Proceedings of the IEEE 98, no. 12 (2010): 2237–51. http://dx.doi.org/10.1109/jproc.2010.2070830.

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37

Wu, Huaqiang, Xiao Hu Wang, Bin Gao, et al. "Resistive Random Access Memory for Future Information Processing System." Proceedings of the IEEE 105, no. 9 (2017): 1770–89. http://dx.doi.org/10.1109/jproc.2017.2684830.

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38

Son, Jong Yeog, Young-Han Shin, Hyungjun Kim, and Hyun M. Jang. "NiO Resistive Random Access Memory Nanocapacitor Array on Graphene." ACS Nano 4, no. 5 (2010): 2655–58. http://dx.doi.org/10.1021/nn100234x.

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39

Lee, Seung Hwan, John Moon, YeonJoo Jeong, et al. "Quantitative, Dynamic TaOx Memristor/Resistive Random Access Memory Model." ACS Applied Electronic Materials 2, no. 3 (2020): 701–9. http://dx.doi.org/10.1021/acsaelm.9b00792.

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40

Kim, Soo-Jung, Heon Lee, and Sung-Hoon Hong. "Solution-processed flexible NiO resistive random access memory device." Solid-State Electronics 142 (April 2018): 56–61. http://dx.doi.org/10.1016/j.sse.2018.02.006.

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41

Park, Sung Pyo, Hee Jun Kim, Jin Hyeok Lee, and Hyun Jae Kim. "Glucose-based resistive random access memory for transient electronics." Journal of Information Display 20, no. 4 (2019): 231–37. http://dx.doi.org/10.1080/15980316.2019.1664650.

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42

Gupta, Varshita, Shagun Kapur, Sneh Saurabh, and Anuj Grover. "Resistive Random Access Memory: A Review of Device Challenges." IETE Technical Review 37, no. 4 (2019): 377–90. http://dx.doi.org/10.1080/02564602.2019.1629341.

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43

Banerjee, Writam, Qi Liu, and Hyunsang Hwang. "Engineering of defects in resistive random access memory devices." Journal of Applied Physics 127, no. 5 (2020): 051101. http://dx.doi.org/10.1063/1.5136264.

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44

Pouyan, Peyman, Esteve Amat, Said Hamdioui, and Antonio Rubio. "Resistive Random Access Memory Variability and Its Mitigation Schemes." Journal of Low Power Electronics 13, no. 1 (2017): 124–34. http://dx.doi.org/10.1166/jolpe.2017.1464.

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45

Lee, Kwangseok, Jung-Shik Jang, Yongwoo Kwon, Keun-Ho Lee, Young-Kwan Park, and Woo Young Choi. "A unified model for unipolar resistive random access memory." Applied Physics Letters 100, no. 8 (2012): 083509. http://dx.doi.org/10.1063/1.3688944.

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46

Lee, Yunseok, Jiung Jang, Beomki Jeon, Kisong Lee, Daewon Chung, and Sungjun Kim. "Resistive Switching Characteristics of Alloyed AlSiOx Insulator for Neuromorphic Devices." Materials 15, no. 21 (2022): 7520. http://dx.doi.org/10.3390/ma15217520.

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Charge-based memories, such as NAND flash and dynamic random-access memory (DRAM), have reached scaling limits and various next-generation memories are being studied to overcome their issues. Resistive random-access memory (RRAM) has advantages in structural scalability and long retention characteristics, and thus has been studied as a next-generation memory application and neuromorphic system area. In this paper, AlSiOx, which was used as an alloyed insulator, was used to secure stable switching. We demonstrate synaptic characteristics, as well as the basic resistive switching characteristics with multi-level cells (MLC) by applying the DC sweep and pulses. Conduction mechanism analysis for resistive switching characteristics was conducted to understand the resistive switching properties of the device. MLC, retention, and endurance are evaluated and potentiation/depression curves are mimicked for a neuromorphic device.

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47

Qiu, Wen Wen, Hong Deng, Mi Li, et al. "The Recent Progress of Research on Resistive Random Access Memory." Advanced Materials Research 685 (April 2013): 372–77. http://dx.doi.org/10.4028/www.scientific.net/amr.685.372.

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Resistive random access memory (RRAM) has attracted comprehensive attention from academia and industry as a new-type of nonvolatile memory. This memory has many advantages, such as high-speed, low power consumption, simple structure, high-density integration, etc. Therefore, it has a strong potential to replace DRAM. This paper summarizes the recent progress of the studies on RRAM. Although the achievement obtained has been summarized, there is still a long way from the real application. We also discuss the principle and related properties of RRAM and forecast the preparation trends of RRAM

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48

Mao, H. J., C. Song, L. R. Xiao, et al. "Unconventional resistive switching behavior in ferroelectric tunnel junctions." Physical Chemistry Chemical Physics 17, no. 15 (2015): 10146–50. http://dx.doi.org/10.1039/c5cp00421g.

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49

Aziz, Izzat, Jing-Hao Ciou, Haruethai Kongcharoen, and Pooi See Lee. "Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance." Journal of Applied Physics 132, no. 1 (2022): 014502. http://dx.doi.org/10.1063/5.0096620.

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Resistive random access memory (ReRAM) is touted to replace silicon-based flash memory due to its low operating voltage, fast access speeds, and the potential to scale down to nm range for ultra-high density storage. In addition, its ability to retain multi-level resistance states makes it suitable for neuromorphic computing application. Here, we develop a cationic ReRAM with a sputtered MgO as the insulating layer. The resistive switching properties of the Ag/MgO/Au ReRAM stack reveal a strong dependence on the sputtering conditions of MgO. Due to the highly stable sputtered MgO, repeatable resistive switching memory is achieved with a low ON voltage of ∼0.7 V and a memory window of ∼1 × 105. Limiting Ag diffusion through a modified top electrode in the W/Ag/MgO/Au stack significantly reduces the abruptness of resistive switching, thereby demonstrating analog switching capability. This phenomenon is evident in the improved linearity and symmetry of potentiation and depression weight modulation pulses, demonstrating ideal Hebbian synaptic learning rules.

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LI, HONGXIA, YIMING Chen, XIN WU, JUNHUA XI, YANWEI HUANG, and ZHENGUO JI. "STUDIES ON STRUCTURAL AND RESISTIVE SWITCHING PROPERTIES OF Al/ZnO/Al STRUCTURED RESISTIVE RANDOM ACCESS MEMORY." Surface Review and Letters 24, no. 04 (2016): 1750048. http://dx.doi.org/10.1142/s0218625x17500482.

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Abstract:

Recently, resistive random access memory has been continuously investigated in order to replace the flash memory. In this paper, Al/ZnO/Al structured device was fabricated by magnetron sputtering and vacuum thermal evaporation. Systematic study has been conducted to explore the structural, morphological, and the resistive switching properties of ZnO films with Al metal as both bottom and top electrodes. The resistive switching mechanism of Al/ZnO/Al device was analyzed based on the above study.

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