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Journal articles on the topic 'Resistive switching memory'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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1

Zhao, Enming, Shuangqiang Liu, Xiaodan Liu, Chen Wang, Guangyu Liu, and Chuanxi Xing. "Flexible Resistive Switching Memory Devices Based on Graphene Oxide Polymer Nanocomposite." Nano 15, no. 09 (2020): 2050111. http://dx.doi.org/10.1142/s1793292020501118.

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Flexible resistive switching memory devices based on graphene oxide (GO) polymer nanocomposite were prepared on flexible substrate to research the influence of bending on resistive switching behavior. The devices showed evident response in resistive switching memory characteristics to flexible bending. The 2000 cycles flexible bending leads to the switch of resistive switching memory characteristic from write-once-read-many time memory (WORM) to static random access memory (SRAM). Both WORM and SRAM memory properties are all repeatable, and the threshold switching voltage also showed good cons
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2

Liu, Chunsen, David Wei Zhang, and Peng Zhou. "Atomic crystals resistive switching memory." Chinese Physics B 26, no. 3 (2017): 033201. http://dx.doi.org/10.1088/1674-1056/26/3/033201.

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3

Raeis-Hosseini, Niloufar, and Jang-Sik Lee. "Resistive switching memory using biomaterials." Journal of Electroceramics 39, no. 1-4 (2017): 223–38. http://dx.doi.org/10.1007/s10832-017-0104-z.

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4

Liu, Lifeng, Di Yu, Wenjia Ma, et al. "Multilevel resistive switching in Ag/SiO2/Pt resistive switching memory device." Japanese Journal of Applied Physics 54, no. 2 (2015): 021802. http://dx.doi.org/10.7567/jjap.54.021802.

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5

Kim, Sungjun, Yao-Feng Chang, Min-Hwi Kim, Tae-Hyeon Kim, Yoon Kim, and Byung-Gook Park. "Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory." Materials 10, no. 5 (2017): 459. http://dx.doi.org/10.3390/ma10050459.

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6

Kim, Hee-Dong, Ho-Myoung An, Yun Mo Sung, Hyunsik Im, and Tae Geun Kim. "Bipolar Resistive-Switching Phenomena and Resistive-Switching Mechanisms Observed in Zirconium Nitride-Based Resistive-Switching Memory Cells." IEEE Transactions on Device and Materials Reliability 13, no. 1 (2013): 252–57. http://dx.doi.org/10.1109/tdmr.2012.2237404.

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7

Yang, Xiang. "Demonstration of Ultra-Fast Switching in Nanometallic Resistive Switching Memory Devices." Journal of Nanoscience 2016 (August 15, 2016): 1–7. http://dx.doi.org/10.1155/2016/8132701.

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Interdependency of switching voltage and time creates a dilemma/obstacle for most resistive switching memories, which indicates low switching voltage and ultra-fast switching time cannot be simultaneously achieved. In this paper, an ultra-fast (sub-100 ns) yet low switching voltage resistive switching memory device (“nanometallic ReRAM”) was demonstrated. Experimental switching voltage is found independent of pulse width (intrinsic device property) when the pulse is long but shows abrupt time dependence (“cliff”) as pulse width approaches characteristic RC time of memory device (extrinsic devi
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8

Jianwei Zhao, Jianwei Zhao, Fengjuan Liu Fengjuan Liu, Jian Sun Jian Sun, Haiqin Huang Haiqin Huang, Zuofu Hu Zuofu Hu, and Xiqing Zhang Xiqing Zhang. "Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices." Chinese Optics Letters 10, no. 1 (2012): 013102–13105. http://dx.doi.org/10.3788/col201210.013102.

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9

Ryu, Sungyeon, Seong Keun Kim, and Byung Joon Choi. "Resistive Switching of Ta2O5-Based Self-Rectifying Vertical-Type Resistive Switching Memory." Journal of Electronic Materials 47, no. 1 (2017): 162–66. http://dx.doi.org/10.1007/s11664-017-5787-z.

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10

WANG, SHENG-YU, and TSEUNG-YUEN TSENG. "INTERFACE ENGINEERING IN RESISTIVE SWITCHING MEMORIES." Journal of Advanced Dielectrics 01, no. 02 (2011): 141–62. http://dx.doi.org/10.1142/s2010135x11000306.

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Electric-induced resistive switching effects have attracted wide attention for future nonvolatile memory applications known as resistive random access memory (RRAM). RRAM is one of the promising candidates because of its excellent properties including simple device structure, high operation speed, low power consumption and high density integration. The RRAM devices primarily utilize different resistance values to store the digital data and can keep the resistance state without any power. Recent advances in the understanding of the resistive switching mechanism are described by a thermal or ele
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11

Ungureanu, Mariana, Raul Zazpe, Federico Golmar, et al. "A Light-Controlled Resistive Switching Memory." Advanced Materials 24, no. 18 (2012): 2496–500. http://dx.doi.org/10.1002/adma.201200382.

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12

Kumar, Dayanand, Umesh Chand, Lew Wen Siang, and Tseung-Yuen Tseng. "ZrN-Based Flexible Resistive Switching Memory." IEEE Electron Device Letters 41, no. 5 (2020): 705–8. http://dx.doi.org/10.1109/led.2020.2981529.

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13

Hota, Mrinal K., Mohamed N. Hedhili, Nimer Wehbe, Martyn A. McLachlan, and Husam N. Alshareef. "Multistate Resistive Switching Memory for Synaptic Memory Applications." Advanced Materials Interfaces 3, no. 18 (2016): 1600192. http://dx.doi.org/10.1002/admi.201600192.

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14

Fowler, Burt W., Yao-Feng Chang, Fei Zhou, et al. "Electroforming and resistive switching in silicon dioxide resistive memory devices." RSC Advances 5, no. 27 (2015): 21215–36. http://dx.doi.org/10.1039/c4ra16078a.

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15

Park, Myung-Joo, and Jang-Sik Lee. "Zeolitic-imidazole framework thin film-based flexible resistive switching memory." RSC Advances 7, no. 34 (2017): 21045–49. http://dx.doi.org/10.1039/c6ra28361f.

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16

Fleck, Karsten, Ulrich Böttger, Rainer Waser, and Stephan Menzel. "SET and RESET Kinetics of SrTiO3-based Resistive Memory Devices." MRS Proceedings 1790 (2015): 7–12. http://dx.doi.org/10.1557/opl.2015.459.

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ABSTRACTIn this paper we present a study of the switching kinetics of SrTiO3 based resistive switching memory devices. A pulse scheme is used to cycle the cells between the high resistive state (HRS) and the low resistive state (LRS) thereby monitoring the transient currents for a precise analysis of the SET and RESET transitions. By variation of the width and amplitude of the applied pulses the switching kinetics are studied between 10-8 and 104 s. Taking the pre-switching currents into account, a power dependency of the SET is found that emphasizes the importance of local Joule heating for t
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17

Yan, An, Gang Liu, Chao Zhang, and Liang Fang. "The Study of Au/TiO2/Au Resistive Switching Memory with Crosspoint Structure." Advanced Materials Research 652-654 (January 2013): 659–63. http://dx.doi.org/10.4028/www.scientific.net/amr.652-654.659.

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This paper presets a process of fabrication and measurements of Au/TiO2/Au resistive switching memory. The device was fabricated using crosspoint structure, and the electrode width and TiO2 film of which are 1 µm and 50 nm. According to our experimental result, resistive switching cells exhibit good stability and reliability with bipolar resistive switching behavior.
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18

Akbari, Masoud, and Jang-Sik Lee. "Control of resistive switching behaviors of solution-processed HfOX-based resistive switching memory devices by n-type doping." RSC Advances 6, no. 26 (2016): 21917–21. http://dx.doi.org/10.1039/c6ra01369d.

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19

Dronov, Mikhail, Maria Kotova, and Ivan Belogorohov. "Photo-controllable Resistive Memory Based on Polymer Materials." MRS Proceedings 1729 (2015): 119–24. http://dx.doi.org/10.1557/opl.2015.289.

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ABSTRACTWe present the memory performance of devices with bistable electrical behavior based on polymer materials. We demonstrate that adding photosensitive particles to admixture allows us to control switching voltages and to observe photo-induced switching in addition to electrical one. From the properties of electrically-induced resistive switching and from the presence of light-induced switching we propose the necessity to consider crossover between to different switching mechanisms – filament formation and charge storage.
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20

Lohn, Andrew J., Patrick R. Mickel, Conrad D. James, and Matthew J. Marinella. "Degenerate resistive switching and ultrahigh density storage in resistive memory." Applied Physics Letters 105, no. 10 (2014): 103501. http://dx.doi.org/10.1063/1.4895526.

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21

Yang, Yuchao, Patrick Sheridan, and Wei Lu. "Complementary resistive switching in tantalum oxide-based resistive memory devices." Applied Physics Letters 100, no. 20 (2012): 203112. http://dx.doi.org/10.1063/1.4719198.

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22

Nam, Ki-Hyun, Jang-Han Kim, Won-Ju Cho, Chung-Hyeok Kim, and Hong-Bay Chung. "Resistive Switching in Amorphous GeSe-Based Resistive Random Access Memory." Journal of Nanoscience and Nanotechnology 16, no. 10 (2016): 10393–96. http://dx.doi.org/10.1166/jnn.2016.13167.

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23

Liu, Xinjun, Sharif Md Sadaf, Sangsu Park, et al. "Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices." IEEE Electron Device Letters 34, no. 2 (2013): 235–37. http://dx.doi.org/10.1109/led.2012.2235816.

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24

Huang, Yong, Zihan Shen, Ye Wu, et al. "Amorphous ZnO based resistive random access memory." RSC Advances 6, no. 22 (2016): 17867–72. http://dx.doi.org/10.1039/c5ra22728c.

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25

Das, Nayan C., Se-I. Oh, Jarnardhanan R. Rani, Sung-Min Hong, and Jae-Hyung Jang. "Multilevel Bipolar Electroforming-Free Resistive Switching Memory Based on Silicon Oxynitride." Applied Sciences 10, no. 10 (2020): 3506. http://dx.doi.org/10.3390/app10103506.

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Resistive random-access memory (RRAM) devices are fabricated by utilizing silicon oxynitride (SiOxNy) thin film as a resistive switching layer. A SiOxNy layer is deposited on a p+-Si substrate and capped with a top electrode consisting of Au/Ni. The SiOxNy-based memory device demonstrates bipolar multilevel operation. It can switch interchangeably between all resistance states, including direct SET switching from a high-resistance state (HRS) to an intermediate-resistance state (IRS) or low-resistance state (LRS), direct RESET switching process from LRS to IRS or HRS, and SET/RESET switching f
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26

Choi, Junhyeok, and Sungjun Kim. "Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer." Micromachines 11, no. 10 (2020): 905. http://dx.doi.org/10.3390/mi11100905.

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In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO2 layer between Ag top electrode and ZrN switching layer. The Ag/ZrN/n-Si device exhibits unstable resistive switching as a result of the uncontrollable Ag migration. Both unipolar and bipolar resistive switching with high RESET current were observed. Negative-SET behavior in the Ag/ZrN/n-Si device makes set-stuck, causing permanent resistive switching failure. On the other hand, the analogue switching in the Ag/TiO2/ZrN/n-Si device, which could be adopted for the multi-bit da
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27

Sonde, Sushant, Bhaswar Chakrabarti, Yuzi Liu, et al. "Silicon compatible Sn-based resistive switching memory." Nanoscale 10, no. 20 (2018): 9441–49. http://dx.doi.org/10.1039/c8nr01540f.

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28

Arshad, Naila, Muhammad Sultan Irshad, Misbah Sehar Abbasi, et al. "Green thin film for stable electrical switching in a low-cost washable memory device: proof of concept." RSC Advances 11, no. 8 (2021): 4327–38. http://dx.doi.org/10.1039/d0ra08784j.

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29

Das, Nayan C., Minjae Kim, Jarnardhanan R. Rani, Sung-Min Hong, and Jae-Hyung Jang. "Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride." Micromachines 12, no. 9 (2021): 1049. http://dx.doi.org/10.3390/mi12091049.

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Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgFx) as the resistive switching layer are reported. The electroforming-free MgFx based RRAM devices exhibit bipolar SET/RESET operational characteristics with an on/off ratio higher than 102 and good data retention of >104 s. The resistive switching mechanism in the Ti/MgFx/Pt devices combines two processes as well as trap-controlled space charge limited conduction (SCLC), which is governed by pre-existing defects of fluoride vacancies in the bulk MgFx layer. In addition, filamentary s
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30

Patil, Harshada, Honggyun Kim, Shania Rehman, et al. "Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction." Nanomaterials 11, no. 2 (2021): 359. http://dx.doi.org/10.3390/nano11020359.

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Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device in which P3HT-PCBM acts as an organic heterojunction with inorganic ZnO protective layer. The prepared memory device has consistent DC endurance (500 cycles), retention properties (104 s), high ON/OFF ratio (105), and environmental stability. The observation of bipolar resistive switching is attributed to creation and rupture of the Ag filamen
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31

Kim, Hee-Dong, Min Ju Yun, and Sungho Kim. "Resistive switching characteristics of Al/Si3N4/p-Si MIS-based resistive switching memory devices." Journal of the Korean Physical Society 69, no. 3 (2016): 435–38. http://dx.doi.org/10.3938/jkps.69.435.

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32

Kim, Hee-Dong, Min Ju Yun, and Sungho Kim. "Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices." Journal of the Korean Physical Society 69, no. 3 (2016): 439–42. http://dx.doi.org/10.3938/jkps.69.439.

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33

Chang, Yao-Feng, Pai-Yu Chen, Burt Fowler, et al. "Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory." Journal of Applied Physics 112, no. 12 (2012): 123702. http://dx.doi.org/10.1063/1.4769218.

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34

Wang, Hong, Bowen Zhu, Xiaohua Ma, Yue Hao, and Xiaodong Chen. "Resistive Switching: Physically Transient Resistive Switching Memory Based on Silk Protein (Small 20/2016)." Small 12, no. 20 (2016): 2802. http://dx.doi.org/10.1002/smll.201670104.

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35

Liu, L. F., Y. S. Chen, J. F. Kang, et al. "Unipolar resistive switching and mechanism in Gd-doped-TiO2-based resistive switching memory devices." Semiconductor Science and Technology 26, no. 11 (2011): 115009. http://dx.doi.org/10.1088/0268-1242/26/11/115009.

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36

Jeon, Dong Su, Ju Hyun Park, and Tae Geun Kim. "Effects of oxygen doping concentration on resistive switching in NiN-based resistive switching memory." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 33, no. 1 (2015): 010602. http://dx.doi.org/10.1116/1.4904209.

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37

Banerjee, Writam, Xiaoxin Xu, Hangbing Lv, Qi Liu, Shibing Long, and Ming Liu. "Complementary Switching in 3D Resistive Memory Array." Advanced Electronic Materials 3, no. 12 (2017): 1700287. http://dx.doi.org/10.1002/aelm.201700287.

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38

Lin, Qiqi, Wei Hu, Zhigang Zang, et al. "Transient Resistive Switching Memory of CsPbBr3Thin Films." Advanced Electronic Materials 4, no. 4 (2018): 1700596. http://dx.doi.org/10.1002/aelm.201700596.

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39

Wang, Hong, Fanben Meng, Bowen Zhu, Wan Ru Leow, Yaqing Liu, and Xiaodong Chen. "Resistive Switching Memory Devices Based on Proteins." Advanced Materials 27, no. 46 (2015): 7670–76. http://dx.doi.org/10.1002/adma.201405728.

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40

Slesazeck, Stefan, and Thomas Mikolajick. "Nanoscale resistive switching memory devices: a review." Nanotechnology 30, no. 35 (2019): 352003. http://dx.doi.org/10.1088/1361-6528/ab2084.

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41

Munjal, Sandeep, and Neeraj Khare. "Advances in resistive switching based memory devices." Journal of Physics D: Applied Physics 52, no. 43 (2019): 433002. http://dx.doi.org/10.1088/1361-6463/ab2e9e.

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42

Lee, S. R., K. Char, D. C. Kim, et al. "Resistive memory switching in epitaxially grown NiO." Applied Physics Letters 91, no. 20 (2007): 202115. http://dx.doi.org/10.1063/1.2815658.

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43

Ielmini, Daniele, and H. S. Philip Wong. "In-memory computing with resistive switching devices." Nature Electronics 1, no. 6 (2018): 333–43. http://dx.doi.org/10.1038/s41928-018-0092-2.

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44

Wang, Yan, Hangbing Lv, Wei Wang, et al. "Highly Stable Radiation-Hardened Resistive-Switching Memory." IEEE Electron Device Letters 31, no. 12 (2010): 1470–72. http://dx.doi.org/10.1109/led.2010.2081340.

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45

LI, HONGXIA, YIMING Chen, XIN WU, JUNHUA XI, YANWEI HUANG, and ZHENGUO JI. "STUDIES ON STRUCTURAL AND RESISTIVE SWITCHING PROPERTIES OF Al/ZnO/Al STRUCTURED RESISTIVE RANDOM ACCESS MEMORY." Surface Review and Letters 24, no. 04 (2016): 1750048. http://dx.doi.org/10.1142/s0218625x17500482.

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Recently, resistive random access memory has been continuously investigated in order to replace the flash memory. In this paper, Al/ZnO/Al structured device was fabricated by magnetron sputtering and vacuum thermal evaporation. Systematic study has been conducted to explore the structural, morphological, and the resistive switching properties of ZnO films with Al metal as both bottom and top electrodes. The resistive switching mechanism of Al/ZnO/Al device was analyzed based on the above study.
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46

Wei, Lujun, Bai Sun, Wenxi Zhao, et al. "Light-modulated resistive switching memory behavior in ZnO/BaTiO3/ZnO multilayer." Modern Physics Letters B 30, no. 14 (2016): 1650141. http://dx.doi.org/10.1142/s0217984916501414.

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Nanoscale structure ZnO/BaTiO3/ZnO multilayer was fabricated on silicon (Si) substrate by RF magnetron sputtering system. The light-modulated resistive switching characteristics in ZnO/BaTiO3/ZnO devices were observed. The light-modulated resistive switching shows good repeatability at room temperature.
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47

Yao, Zizhu, Liang Pan, Lizhen Liu, et al. "Simultaneous implementation of resistive switching and rectifying effects in a metal-organic framework with switched hydrogen bond pathway." Science Advances 5, no. 8 (2019): eaaw4515. http://dx.doi.org/10.1126/sciadv.aaw4515.

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Resistive random-access memory (RRAM) has evolved as one of the most promising candidates for the next-generation memory, but bistability for information storage, simultaneous implementation of resistive switching and rectification effects, and a better understanding of switching mechanism are still challenging in this field. Herein, we report a RRAM device based on a chiral metal-organic framework (MOF) FJU-23-H2O with switched hydrogen bond pathway within its channels, exhibiting an ultralow set voltage (~0.2 V), a high ON/OFF ratio (~105), and a high rectification ratio (~105). It is not on
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48

Kumar, D., R. Aluguri, U. Chand, and T. Y. Tseng. "Metal oxide resistive switching memory: Materials, properties and switching mechanisms." Ceramics International 43 (August 2017): S547—S556. http://dx.doi.org/10.1016/j.ceramint.2017.05.289.

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49

Nardi, Federico, Simone Balatti, Stefano Larentis, David C. Gilmer, and Daniele Ielmini. "Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory." IEEE Transactions on Electron Devices 60, no. 1 (2013): 70–77. http://dx.doi.org/10.1109/ted.2012.2226728.

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50

Mao, H. J., C. Song, L. R. Xiao, et al. "Unconventional resistive switching behavior in ferroelectric tunnel junctions." Physical Chemistry Chemical Physics 17, no. 15 (2015): 10146–50. http://dx.doi.org/10.1039/c5cp00421g.

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