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1

Chang, L. L., E. E. Mendez, and C. Tejedor, eds. Resonant Tunneling in Semiconductors. Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3846-2.

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2

Billen, Keri. Ion implantation of double-barrier resonant-tunnelling diodes. Keri Billen, and the University of Surrey, Guildford, UK, 1996.

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3

Mizuta, Hiroshi. The physics and applications of resonant tunnelling diodes. Cambridge University Press, 1995.

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4

Kuo, Chun-Yi. A study of electron tunnelling mechanisms in AIGaAs/GAas triple-barrier resonant tunnelling structures. UMIST, 1998.

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5

Chang, L. L. Resonant Tunneling in Semiconductors: Physics and Applications. Springer US, 1991.

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6

NATO Advanced Research Workshop on Resonant Tunneling in Semiconductors: Physics and Applications (1990 San Lorenzo del Escorial, Spain). Resonant tunneling in semiconductors: Physics and applications. Plenum Press, published in cooperation with NATO Scientific Affairs Division, 1991.

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7

Baumann, E. D. Operational characteristics of a 200⁰C LC parallel resonant circuit. National Aeronautics and Space Administration, 1995.

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8

Vuillaume, D. Molecular electronics based on self-assembled monolayers. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.9.

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This article considers molecular electronics based on self-assembled monolayers. It begins with a brief overview of the nanofabrication of molecular devices, followed by a discussion of the electronic properties of several basic devices, from simple molecules such as molecular tunnel junctions and molecular semiconducting wires, to more complex ones such as molecular rectifying diodes. It also describes molecular switches and memories, focusing on three approaches called ‘conformational memory’, ‘charge-based memory’ and ‘RTD-based memory’ (RTD is resonant tunnelling diode). It shows that memo
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9

Tanoue, Tomonori, and Hiroshi Mizuta. The Physics and Applications of Resonant Tunnelling Diodes (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering). Cambridge University Press, 2006.

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10

Paul, Douglas J. Si/SiGe heterostructures in nanoelectronics. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.5.

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This article describes the applications of Si/SiGe heterostructures in nanoelectronics. Silicon-germanium is now a mature field with heterojunction bipolar transistors (HBTs) and complementary metal oxide semiconductors (CMOS) products in the market place. In the research field there are many areas where Si/SiGe heterostructures are being used to bandgap engineer nanoelectronic devices resulting in significant improvements in device performance. A number of these areas have good potential for eventually reaching production, while thereare also many that allow fundamental research on the physic
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11

1936-, Sum K. Kit, ed. Recent developments in resonant power conversion. Intertec Communications, 1988.

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12

Resonant Tunneling in Semiconductors: Physics and Applications (NATO Science Series: B:). Springer, 1992.

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13

Ficq, Bernard L. Resonant forward-biased guard rings for suppression of substrate noise in mixed-mode CMOS circuits. 1994.

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14

Ficq, Bernard L. Resonant forward-biased guard rings for suppression of substrate noise in mixed-mode CMOS circuits. 1994.

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15

N, Hammoud Ahmad, and United States. National Aeronautics and Space Administration., eds. Operational characteristics of a 200b□-s□p0b□-s□sC LC parallel resonant circuit. National Aeronautics and Space Administration, 1995.

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16

Wernsdorfer, W. Molecular nanomagnets. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.4.

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This article describes the quantum phenomena observed in molecular nanomagnets. Molecular nanomagnets, or single-molecule magnets (SMMs), provides a fundamental link between spintronics and molecular electronics. SMMs combine the classic macroscale properties of a magnet with the quantum properties of a nanoscale entity. The resulting field, molecular spintronics, aims at manipulating spins and charges in electronic devices containing one or more molecules. This article first considers molecular nanomagnets and the giant spin model for nanomagnets before discussing the quantum dynamics of a di
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17

Glazov, M. M. Spin Resonance. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198807308.003.0003.

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This chapter is devoted to one of key phenomena in the field of spin physics, namely, resonant absorption of electromagnetic waves under conditions where the Zeeman splitting of spin levels in magnetic field is equal to photon energy. This method is particularly important for identification of nuclear spin effects, because resonance spectra provide fingerprints of different involved spin species and make it possible to distinguish different nuclear isotopes. As discussed in this chapter the nuclear magnetic resonance provides also an access to local magnetic fields acting on nuclear spins. The
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