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Journal articles on the topic 'Resonant tunnelling in semiconductors'

Author: Grafiati

Published: 4 June 2021

Last updated: 16 February 2022

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1

CAUSSIGNAC, PH, J. DESCLOUX, and A. YAMNAHAKKI. "SIMULATION OF SOME QUANTUM MODELS FOR SEMICONDUCTORS." Mathematical Models and Methods in Applied Sciences 12, no. 08 (2002): 1049–74. http://dx.doi.org/10.1142/s0218202502002033.

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Three different existing steady-state models with quantum correction for simulating the resonant tunnelling diode are summarized. Numerical methods and a theoretical argument for one of the models are briefly described. Results of simulation are focused on the capability of reproducing the negative differential resistivity.

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2

Reed, M. A., J. N. Randall, and J. H. Luscombe. "Semiconductor quantum dot resonant tunnelling spectroscopy." Semiconductor Science and Technology 7, no. 3B (1992): B12—B14. http://dx.doi.org/10.1088/0268-1242/7/3b/003.

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3

Kelly, M. J., and K. Billen. "Resonant tunnelling diodes as probes of electronic transport in ion-implanted semiconductors." Physica E: Low-dimensional Systems and Nanostructures 2, no. 1-4 (1998): 489–92. http://dx.doi.org/10.1016/s1386-9477(98)00100-3.

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4

Shokri, Ali Asghar. "Angular dependence of shot noise in diluted magnetic semiconductors resonant tunnelling diodes." International Journal of Nanoparticles 3, no. 1 (2010): 14. http://dx.doi.org/10.1504/ijnp.2010.033218.

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5

Khan, Arif, P. K. Mahapatra, S. P. Bhattacharya, and S. Noor Mohammad. "Resonant tunnelling lifetime in the semiconductor superlattice." Philosophical Magazine 84, no. 6 (2004): 547–63. http://dx.doi.org/10.1080/14786430310001623551.

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6

Suris, R. A., and G. G. Zegrya. "Resonant hole tunnelling through a single heterobarrier in semiconductor heterostructures." Semiconductor Science and Technology 7, no. 3 (1992): 347–51. http://dx.doi.org/10.1088/0268-1242/7/3/012.

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7

Chen, Xiaoshuang, Wei Lu, and S. C. Shen. "Nonlinear resonant tunnelling in a novel one-dimensional semimagnetic semiconductor superlattice." Journal of Physics A: Mathematical and General 32, no. 9 (1999): 1667–74. http://dx.doi.org/10.1088/0305-4470/32/9/013.

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8

Lin, Chen-Sheng, Kate Cavanagh, Hei-Chit L. Tsui, et al. "Ultraviolet Emission From Resonant Tunnelling Metal–Insulator– Semiconductor Light Emitting Tunnel Diodes." IEEE Photonics Journal 9, no. 4 (2017): 1–8. http://dx.doi.org/10.1109/jphot.2017.2714341.

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9

Vohra, Rajan, and Ravinder Singh Sawhney. "Expounding Transport Properties of Deoxyribonucleic Acid for Electronic Applications." Advanced Science Letters 24, no. 8 (2018): 5982–88. http://dx.doi.org/10.1166/asl.2018.12231.

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The scientific interest in field of molecular electronics has raised many folds in last decade to become the centre stage of contemporary research. The community of researchers working in this domain has been continuously exploring newer molecules, which can replace semiconductors of last century and still continue with the same growth. In this research communiqué, we have implemented molecular junctions using NEGF-EHT approach to elucidate the electronic transport properties of two important strands Adenine and Cytosine of Deoxyribonucleic Acid (DNA) sandwiched between with two Au leads under

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10

Xiong, S. J., and S. Z. Yu. "Giant magnetoresistance caused by magnetic-field-sensitive resonant tunnelling in a random multibarrier semiconductor superlattice." Superlattices and Microstructures 24, no. 3 (1998): 215–20. http://dx.doi.org/10.1006/spmi.1996.0155.

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11

Hyldgaard, P., and A. P. Jauho. "Elastic and inelastic resonant tunnelling in narrow-band systems: application to transport in minibands of semiconductor superlattices." Journal of Physics: Condensed Matter 2, no. 43 (1990): 8725–29. http://dx.doi.org/10.1088/0953-8984/2/43/018.

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12

Khan-Cheema, U. M., P. C. Klipstein, D. G. Austing, et al. "Interface effects, band overlap and the semimetal to semiconductor transition in InAs/GaSb interband resonant tunnelling diodes." Solid-State Electronics 37, no. 4-6 (1994): 977–79. http://dx.doi.org/10.1016/0038-1101(94)90340-9.

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13

Reyes-Gómez, E., C. A. Perdomo-Leiva, L. E. Oliveira, and M. de Dios-Leyva. "A theoretical resonant-tunnelling approach to electric-field effects in quasiperiodic Fibonacci GaAs-(Ga,Al)As semiconductor superlattices." Journal of Physics: Condensed Matter 10, no. 16 (1998): 3557–67. http://dx.doi.org/10.1088/0953-8984/10/16/009.

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14

Abdurakhmanov, B. M., M. M. Adilov, M. Kh Ashurov, et al. "Thermoelectrical characteristics of granular semiconductors with resonance-tunnelling charge carriers for conversion of the solar radiation heat component." Applied Solar Energy 51, no. 4 (2015): 253–57. http://dx.doi.org/10.3103/s0003701x15040039.

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15

De Leo, S., and P. Rotelli. "Resonant laser tunnelling." European Physical Journal D 65, no. 3 (2011): 563–70. http://dx.doi.org/10.1140/epjd/e2011-20408-5.

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16

Payne, M. C. "Time-dependent resonant tunnelling." Journal of Physics C: Solid State Physics 21, no. 20 (1988): 3767–76. http://dx.doi.org/10.1088/0022-3719/21/20/011.

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17

Dellow, M. W., P. H. Beton, M. Henini, et al. "Gated resonant tunnelling devices." Electronics Letters 27, no. 2 (1991): 134. http://dx.doi.org/10.1049/el:19910088.

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18

Capasso, F., S. Sen, A. Y. Cho, and A. L. Hutchinson. "Resonant tunnelling electron spectroscopy." Electronics Letters 23, no. 1 (1987): 28–29. http://dx.doi.org/10.1049/el:19870021.

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19

Sheard, F. W., and T. M. Fromhold. "Physics of Resonant Tunnelling." Acta Physica Polonica A 82, no. 4 (1992): 523–38. http://dx.doi.org/10.12693/aphyspola.82.523.

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20

Chitta, V. A., R. E. M. de Bekker, J. C. Maan, et al. "Photon-assisted tunnelling in sequential resonant tunnelling devices." Semiconductor Science and Technology 7, no. 3 (1992): 432–35. http://dx.doi.org/10.1088/0268-1242/7/3/028.

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21

Phillips, W. A. "Tunnelling states in amorphous semiconductors." Journal of Non-Crystalline Solids 77-78 (December 1985): 1329–38. http://dx.doi.org/10.1016/0022-3093(85)90904-4.

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22

Le Deunff, Jérémy, Olivier Brodier, and Amaury Mouchet. "A primer for resonant tunnelling." European Journal of Physics 33, no. 6 (2012): 1771–87. http://dx.doi.org/10.1088/0143-0807/33/6/1771.

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23

Liang, M. J., G. G. Siu, and K. S. Chan. "A resonant-tunnelling electron wavesplitter." Journal of Physics D: Applied Physics 27, no. 7 (1994): 1513–17. http://dx.doi.org/10.1088/0022-3727/27/7/026.

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24

Rudberg, B. G. R. "Optical phonons in resonant tunnelling." Semiconductor Science and Technology 5, no. 4 (1990): 328–32. http://dx.doi.org/10.1088/0268-1242/5/4/009.

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25

Lippens, D. "Resonant tunnelling double barrier heterostructures." Microelectronics Journal 24, no. 8 (1993): 763–78. http://dx.doi.org/10.1016/0026-2692(93)90076-q.

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26

Roy, C. L., and Arif Khan. "Some features of resonant tunnelling." Journal of Physics and Chemistry of Solids 53, no. 3 (1992): 383–85. http://dx.doi.org/10.1016/0022-3697(92)90172-a.

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27

Lok, J. G. S., A. K. Geim, J. C. Maan, et al. "Resonant tunnelling through D− states." Surface Science 361-362 (July 1996): 247–50. http://dx.doi.org/10.1016/0039-6028(96)00395-0.

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28

Payne, M. C. "Resonant tunnelling of a wavepacket in the sequential tunnelling model." Journal of Physics C: Solid State Physics 21, no. 16 (1988): L579—L583. http://dx.doi.org/10.1088/0022-3719/21/16/006.

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29

Ouali, F. F., N. N. Zinov'ev, L. J. Challis, et al. "Phonon-assisted tunnelling in GaAs/(AlGa)As resonant tunnelling devices." Physica B: Condensed Matter 219-220 (April 1996): 19–21. http://dx.doi.org/10.1016/0921-4526(95)00636-2.

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30

Payne, M. C. "Space charge effects in resonant tunnelling." Semiconductor Science and Technology 2, no. 12 (1987): 797–801. http://dx.doi.org/10.1088/0268-1242/2/12/008.

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31

Payne, M. C. "Transfer Hamiltonian description of resonant tunnelling." Journal of Physics C: Solid State Physics 19, no. 8 (1986): 1145–55. http://dx.doi.org/10.1088/0022-3719/19/8/013.

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32

Collins, S., D. Lowe, and J. R. Barker. "A dynamic analysis of resonant tunnelling." Journal of Physics C: Solid State Physics 20, no. 36 (1987): 6233–43. http://dx.doi.org/10.1088/0022-3719/20/36/022.

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33

Collins, S., David Lowe, and J. R. Barker. "A dynamic analysis of resonant tunnelling." Journal of Physics C: Solid State Physics 21, no. 32 (1988): 5593. http://dx.doi.org/10.1088/0022-3719/21/32/513.

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34

Glück, Markus, Andrey R. Kolovsky, and H. Jürgen Korsch. "Resonant tunnelling of Wannier-Stark states." Journal of Optics B: Quantum and Semiclassical Optics 2, no. 5 (2000): 694–703. http://dx.doi.org/10.1088/1464-4266/2/5/318.

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35

Lyanda-Geller, Yu B., and J.-P. Leburton. "Resonant tunnelling through arrays of nanostructures." Semiconductor Science and Technology 13, no. 1 (1998): 35–42. http://dx.doi.org/10.1088/0268-1242/13/1/006.

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36

Escott, C. C., F. A. Zwanenburg, and A. Morello. "Resonant tunnelling features in quantum dots." Nanotechnology 21, no. 27 (2010): 274018. http://dx.doi.org/10.1088/0957-4484/21/27/274018.

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37

Goorden, M. C., Ph Jacquod, and J. Weiss. "Macroscopic resonant tunnelling through Andreev interferometers." Nanotechnology 19, no. 13 (2008): 135401. http://dx.doi.org/10.1088/0957-4484/19/13/135401.

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38

ZOU, J., and A. GOPINATH. "The performance of resonant tunnelling transistors." International Journal of Electronics 73, no. 3 (1992): 555–59. http://dx.doi.org/10.1080/00207219208925689.

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39

Seabaugh, A. C., J. N. Randall, Y. C. Kao, J. H. Luscombe, and A. M. Bouchard. "In0.52Al0.48As/In0.53Ga0.47As lateral resonant tunnelling transistor." Electronics Letters 27, no. 20 (1991): 1832. http://dx.doi.org/10.1049/el:19911139.

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40

Shik, A. "Resonant tunnelling devices with lateral confinement." Semiconductor Science and Technology 8, no. 2 (1993): 263–67. http://dx.doi.org/10.1088/0268-1242/8/2/018.

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41

Capasso, F., S. Sen, F. Beltram, and A. Y. Cho. "Resonant tunnelling gate field-effect transistor." Electronics Letters 23, no. 5 (1987): 225–26. http://dx.doi.org/10.1049/el:19870158.

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42

Kuivalainen, P., and A. Hovinen. "Magnetotransport in ferromagnetic resonant tunnelling diodes." Journal of Physics D: Applied Physics 35, no. 1 (2001): 48–54. http://dx.doi.org/10.1088/0022-3727/35/1/309.

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43

Sakai, J. W., N. La Scala, P. C. Main, et al. "Mesoscopic effects in resonant tunnelling diodes." Solid-State Electronics 37, no. 4-6 (1994): 965–68. http://dx.doi.org/10.1016/0038-1101(94)90337-9.

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44

Ramdane, A., G. Faini, and H. Launois. "Resonant tunnelling in O-D systems." Zeitschrift f�r Physik B Condensed Matter 85, no. 3 (1991): 389–93. http://dx.doi.org/10.1007/bf01307635.

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45

Wigmore, J. K., M. Giltrow, M. Sahraoui-Tahar, et al. "Phonon emission in resonant tunnelling structures." Physica B: Condensed Matter 219-220 (April 1996): 31–33. http://dx.doi.org/10.1016/0921-4526(95)00640-0.

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46

Mayorov, A. S., A. K. Savchenko, M. V. Entin, G. Faini, F. Laruelle, and E. Bedel. "Resonant tunnelling via two impurity levels in a vertical tunnelling nanostructure." physica status solidi (c) 4, no. 2 (2007): 505–8. http://dx.doi.org/10.1002/pssc.200673225.

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47

Shi, Jun-jie, B. C. Sanders, and Shao-hua Pan. "Coherent and Phonon-assisted Tunnelling in Asymmetric Double Barrier Resonant Tunnelling Structures." Australian Journal of Physics 53, no. 1 (2000): 35. http://dx.doi.org/10.1071/ph99037.

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We present a theory for calculating the phonon-assisted tunnelling current in asymmetric double barrier resonant tunnelling structures (DBRTS), in which all of the phonon modes including the interface modes and the confined bulk-like LO phonons and the conduction band nonparabolicity are considered. An important physical picture about coherent and phonon-assisted tunnelling is given. The coherent tunnelling current can be directly determined by both the width of the resonant level and the peak value of the transmission coecient at the resonant level. The phonon-assisted tunnelling current main

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48

Zakharova, A. "Interband resonant tunnelling in quantizing magnetic field." Solid State Communications 113, no. 10 (2000): 599–602. http://dx.doi.org/10.1016/s0038-1098(99)00536-0.

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49

Fromhold, T. M., P. B. Wilkinson, L. Eaves, et al. "Manifestations of quantum chaos in resonant tunnelling." Chaos, Solitons & Fractals 8, no. 7-8 (1997): 1381–411. http://dx.doi.org/10.1016/s0960-0779(97)00025-8.

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50

Paul, D. J., P. See, I. V. Zozoulenko, et al. "n-type Si/SiGe resonant tunnelling diodes." Materials Science and Engineering: B 89, no. 1-3 (2002): 26–29. http://dx.doi.org/10.1016/s0921-5107(01)00785-1.

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