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Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Reverse Recovery; Diode; LDMOS.'
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Journal articles on the topic "Reverse Recovery; Diode; LDMOS":
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Elhami Khorasani, Arash, Mark Griswold, and T. L. Alford. "Gate-Controlled Reverse Recovery for Characterization of LDMOS Body Diode." IEEE Electron Device Letters 35, no. 11 (November 2014): 1079–81. http://dx.doi.org/10.1109/led.2014.2353301.
KAZIMIERCZUK, MARIAN K. "REVERSE RECOVERY OF POWER pn JUNCTION DIODES." Journal of Circuits, Systems and Computers 05, no. 04 (December 1995): 589–606. http://dx.doi.org/10.1142/s0218126695000369.
A quasi-steady state approximation is used to derive expressions for the waveforms of minority carrier charge stored in p+nn+ power junction diodes driven by large-signal sinusoidal and ramp voltages. These waveforms are derived by solving a diode charge-control differential equation. Using the charge waveforms, the storage time is determined and the diode current and voltage waveforms are predicted. It is shown that three frequency ranges can be distinguished: (1) low-frequency range in which the reverse recovery is negligible, (2) mid-frequency range in which the reverse recovery is detrimental, but the diode is still of practical value, and (3) high-frequency range where the diode does not exhibit its rectifying properties. A simple method for measuring the minority carrier lifetime is proposed. Experimental results are given for an MR826 fast-recovery pn junction diode and a 31DQ06 Schottky diode for operating frequencies of up to 10 MHz. The theoretical and experimental results were in good agreement.
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Banáš, Stanislav, Jan Divín, Josef Dobeš, and Václav Paňko. "Accurate diode behavioral model with reverse recovery." Solid-State Electronics 139 (January 2018): 31–38. http://dx.doi.org/10.1016/j.sse.2017.10.034.
Lauritzen, P. O., and C. L. Ma. "A simple diode model with reverse recovery." IEEE Transactions on Power Electronics 6, no. 2 (April 1991): 188–91. http://dx.doi.org/10.1109/63.76804.
Sun, Wei, and Da Ke Yang. "Automatic Measurement and Modeling Implementation of Diode Reverse Recovery." Applied Mechanics and Materials 385-386 (August 2013): 1300–1304. http://dx.doi.org/10.4028/www.scientific.net/amm.385-386.1300.
Diode reverse recovery current dissipation is the most important source of power dissipation for diodes used in fast switching converters or other power devices applications. As the reverse recovery current can peak at very high currents, this may cause the failures of other devices in the circuit. Therefore the Diode Reverse Recovery phenomena should no longer be ignored in device model and circuit simulations employing diodes. Automatic measurement of Diode Reverse Recovery time is becoming essential for mass production industrial process monitoring and device modeling. In this paper, a novel Sagittarius automatic Diode Reverse Recovery Time Measurement System was developed. This system has enabled the automation measurement and improved the measurement speed for about 5-7 times. A new Verilog A Diode Reverse Recovery model which can reflect the actual device characteristics was developed base on the data measured using this new system.
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Shao, Wei Hua, Xiao Ling Li, Hua Ping Jiang, Xuan Guo, Zheng Zeng, Li Ran, and Philip A. Mawby. "Power Loss Comparison in a BOOST PFC Circuit Considering the Reverse Recovery of the Forward Diode." Materials Science Forum 963 (July 2019): 873–77. http://dx.doi.org/10.4028/www.scientific.net/msf.963.873.
The nature of diode reverse recovery is analyzed in this paper, and the reverse recovery loss is evaluated in a BOOST PFC converter using a silicon (Si) or silicon carbide (SiC) diode in the forward branch. Mathematical models of the forward conduction and reverse recovery losses are established to assess the influence of Si and SiC diodes. To characterize and quantify the losses related to diode reverse recovery, an 85~265V AC to 400V DC, 2kW BOOST PFC prototype is built with switching frequencies of 65kHz. It is found that the reverse-recovery inherent in a Si diode cannot be neglected. The switching loss is substantially smaller when the diode is a SiC one. In order to investigate further, a double pulse test rig is established, with the switch and the diode being either Si or SiC. The experimental results demonstrate that with a SiC diode, not only the diode conduction losses but also the transistor turn-on loss is greatly reduced.
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Anwar, Mohammed Sadique, Prima Sukma Permata, Md Imran Siddiqui, Jung Ruey Tsai, Shao Ming Yang, and Gene Sheu. "Analysis of LDMOS for Effect of Fingers, Device-Width and Inductance (Load) on Reverse Recovery." Applied Mechanics and Materials 229-231 (November 2012): 2077–81. http://dx.doi.org/10.4028/www.scientific.net/amm.229-231.2077.
This work demonstrates the effect of fingers, device-width and inductance on reverse recovery of LDMOS by unclamped inductive switching (UIS) circuit simulation for two dimensional (2D) and three dimensional (3D) devices. All the observations have been done for maximum pulse width at which device pass under UIS test. For UIS simulations the failure criteria is taken as the device temperature reaching a critical value of 650K. It has been shown that reverse recovery charge (Qrr) increased linearly with number of fingers, device width and inductance.
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Lee, Kwang H., Aaron Park, Seongil Im, Yerok Park, Su H. Kim, Myung M. Sung, and Seungjun Lee. "Advantageous Reverse Recovery Behavior of Pentacene/ZnO Diode." Electrochemical and Solid-State Letters 13, no. 8 (2010): H261. http://dx.doi.org/10.1149/1.3428743.
Asano, Katsunori, Atsushi Tanaka, Shuuji Ogata, Koji Nakayama, and Yoichi Miyanagi. "Transient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC Pin Diode." Materials Science Forum 717-720 (May 2012): 965–68. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.965.
The transient electrical characteristics of the forward recovery and reverse recovery characteristics of lifetime-controlled high blocking voltage 4H-SiC pin diodes by electron irradiation are investigated. Even at a heavy electron dose of 1×1014 cm-2, the forward voltage overshoot of a 4H-SiC pin diode is lower than that of a 2 kV/100 A class Si fast diode. As for the reverse recovery characteristics, small reverse recovery current and fast reverse recovery time are obtained by electron irradiation. The reduction ratio of recovery loss can therefore exceed the increase ratio of steady-state loss by electron irradiation.
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Rahimo, M. T., and N. Y. A. Shammas. "Freewheeling diode reverse-recovery failure modes in IGBT applications." IEEE Transactions on Industry Applications 37, no. 2 (2001): 661–70. http://dx.doi.org/10.1109/28.913734.
Dissertations / Theses on the topic "Reverse Recovery; Diode; LDMOS":
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Deschaine, Wesley. "MODELING AND OPTIMIZATION OF BODY DIODE REVERSE RECOVERY CHARACTERISTICS OF LDMOS TRANSISTORS." Master's thesis, University of Central Florida, 2006. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3686.
As switching speeds for DC-DC converter applications keep becoming faster and faster and voltage requirements become smaller and smaller, the need for new device structures becomes more prevalent. Designers of these new structures will need to make sure they take into consideration the different power losses associated with the different structures and make modifications to reduce or if possible eliminate them. A new 30V LDMOS device has been created and is being implemented into a synchronous buck converter for future DC-DC conversions. This new lateral device has a Figure of Merit of 80mÙ*nC, representing a 50% reduction from the conventional trench MOSFET. The only draw back with this new device is that the body diode power loss has increased significantly. There are two principal goals of this research. The first is to reduce the body diode reverse recovery characteristics of a 30V LDMOS transistor without employing an additional Schottky diode, increasing the Figure of Merit, or decreasing the breakdown voltage past 30 volts. The second is to achieve 75% reduction in reverse recovery charge (Qrr) through each solution. Four solutions will be presented in this study and have been verified through extensive ISE-TCAD device and circuit simulation. M.S.E.E. Department of Electrical and Computer Engineering Engineering and Computer Science Electrical Engineering
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Šuľan, Dušan. "Zpětné zotavení ve výkonových integrovaných obvodech." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2016. http://www.nusl.cz/ntk/nusl-242128.
Předkládaná práce se zabývá parametrem “Reverse Recovery Time“ u polovodičových prvků a jeho vlivem na typické spínací obvody. V první části práce je objasněno co je “Reverse Recovery Time“ a jeho jednotlivé části. V další sekci je popsána jeho fyzikální podstata. Na konci teoretická části je rozebrán jeho efekt na spínací ztráty a doporučená metoda měření tohto parametru . Praktická část práce je zaměřena na simulace Dpdr45nres45 v prostředích Cadence a TCAD. Poslední část se zabývá návrhem obvodu na měření u reálných diod a samotným měřením diod a tranzistorů.
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Landowshi, Matthew M. "Modeling and analysis of reverse recovery in PiN power diodes in series." Honors in the Major Thesis, University of Central Florida, 2008. http://digital.library.ucf.edu/cdm/ref/collection/ETH/id/1101.
This item is only available in print in the UCF Libraries. If this is your Honors Thesis, you can help us make it available online for use by researchers around the world by following the instructions on the distribution consent form at http://library.ucf.edu/Systems/DigitalInitiatives/DigitalCollections/InternetDistributionConsentAgreementForm.pdf You may also contact the project coordinator, Kerri Bottorff, at kerri.bottorff@ucf.edu for more information. Bachelors Engineering and Computer Science Electrical Engineering
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Felsl, Hans Peter. "Silizium- und SiC-Leistungsdioden unter besonderer Berücksichtigung von elektrisch-thermischen Kopplungseffekten und nichtlinearer Dynamik." Doctoral thesis, Universitätsbibliothek Chemnitz, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200902077.
Diese Arbeit befasst sich mit Hochleistungsdioden aus den Halbleitermaterialen Silizium und Siliziumkarbid. Analysiert werden die statischen und dynamischen Schalteigenschaften. Bei den SiC-Bauelementen handelt es sich um unipolare Schottky-Dioden und bei den Silizium-Dioden um bipolare pin-Dioden. Bei den SiC-Schottky-Dioden liegt der Schwerpunkt auf der Analyse des statischen Durchbruchverhaltens von Randstrukturen und auf der Untersuchung der Selbsterwärmung bei Einzel- und Mehrpulsbelastung. Bei den bipolaren Silizium-Dioden wird das Durchbruchverhalten bei niedrigen und hohen Stromdichten untersucht. Aus den Sperrcharakteristiken, die positiv und negativ differentielle Widerstandsäste aufweisen, lassen sich Schlussfolgerungen auf das dynamische Verhalten ziehen. Das Abschaltverhalten (reverse recovery) der mit Plasma überschwemmten Bauelemente wird zuerst im Hinblick auf den Einfluss von Strukturparametern untersucht, um die prinzipiellen Einflussgrößen zu erläutern. Dann folgen die Ergebnisse zur Filamentbildung, die bei den hohen Belastungen der Bauelemente während des Kommutierungsprozesses auftreten können. Die auftretenden Filamentstrukturen werden analysiert und - soweit möglich - Einflussgrößen herausgearbeitet. Schließlich wird noch auf den Einfluss von Randstrukturen auf das Filamentierungsverhalten, die als Inhomogenität in jedem Bauelement vorhanden sind, eingegangen.
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Ryšavý, Lukáš. "Univerzální přesné usměrňovače s proudovými aktivními prvky." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2013. http://www.nusl.cz/ntk/nusl-220210.
In this thesis new circuit solutions of universal precision rectifiers with current active elements are proposed. Based on the knowledge of current active elements, universal precision rectifiers and adverse impacts on these circuits new circuit solutions are proposed. These circuits are then simulated and compared with the known circuits of precision rectifiers. In concusion two original circuits and two proposed circuit solutions based on original ones are implemented, their properties are experimentally measured and their function are verified. The main active element in the original circuit are the OPA or THS, the proposed circuits are used the OPA and THS and the universal current conveyor, which offers a wide range of application use and realization of different variations of active current elements.
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Baburske, Roman. "Dynamik des Ladungsträgerplasmas während des Ausschaltens bipolarer Leistungsdioden." Doctoral thesis, Universitätsbibliothek Chemnitz, 2011. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-74615.
Diese Arbeit beschäftigt sich mit dem besonders kritischen Ausschaltvorgang bipolarer Leistungsdioden, bei dem das im Durchlass vorhandene Ladungsträgerplasma abgebaut wird. Schwerpunkt ist dabei die Untersuchung von zwei ungewollten Phänomenen, die während des Ausschaltens auftreten können. Diese sind ein plötzliches Abreißen des Rückstroms während der Kommutierung und eine Zerstörung der Diode mit einem lokalen Aufschmelzen in der aktiven Fläche. Betrachtet wird dazu der Ladungsträgerberg, der sich während des Schaltvorgangs bildet. Durch die Analyse des Verhaltens der Ladungsträgerbergfronten, lässt sich sowohl der Einfluss von Schaltbedingungen auf den Plasmaabbau als auch der Unterschied von anodenseitigen und kathodenseitigen Stromfilamenten erklären. Die Erkenntnisse werden auf das moderne Diodenkonzept CIBH (Controlled Injection of Backside Holes) angewandt. Das Potential von CIBH-Dioden zur Verbesserung der Höhenstrahlfestigkeit und Stoßstromfestigkeit wird aufgezeigt. Schließlich wird das neue Anodenemitterkonzept IDEE (Inverse Injection Dependency of Emitter Efficiency) vorgestellt, welches in Kombination mit CIBH die Gesamteigenschaften von Dioden maßgeblich verbessert. Die aktuelle Version Dissertation_Roman_Baburske_2011_11_21.pdf ist um einige Tippfehler bereinigt This work concerns the reverse-recovery process of bipolar power diodes. The focus is the investigation of two undesirable phenomena. These are the sudden strong reverse-current decay and the destruction of the diode with a local melting of the chip in the active area. The plasma layer, which arises during the switching period, is considered. An analysis of the plasma-layer front dynamics allows an understanding of the influence of switching parameters on the plasma extraction and the different behavior of anode-side and cathode-side filaments. The results of the analysis are used to describe the operation of the modern diode concept CIBH (Controlled Injection of Backside Holes). The potential of CIBH diodes to improve cosmic-ray stability and surge-current ruggedness is investigated. Finally, a new anode-emitter concept called IDEE (Inverse Injection Dependency of Emitter Efficiency) is introduced, which improves in combination with CIBH the overall performance of a power diode
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Baburske, Roman. "Dynamik des Ladungsträgerplasmas während des Ausschaltens bipolarer Leistungsdioden." Doctoral thesis, Universitätsverlag der Technischen Universität Chemnitz, 2010. https://monarch.qucosa.de/id/qucosa%3A19578.
Diese Arbeit beschäftigt sich mit dem besonders kritischen Ausschaltvorgang bipolarer Leistungsdioden, bei dem das im Durchlass vorhandene Ladungsträgerplasma abgebaut wird. Schwerpunkt ist dabei die Untersuchung von zwei ungewollten Phänomenen, die während des Ausschaltens auftreten können. Diese sind ein plötzliches Abreißen des Rückstroms während der Kommutierung und eine Zerstörung der Diode mit einem lokalen Aufschmelzen in der aktiven Fläche.
Betrachtet wird dazu der Ladungsträgerberg, der sich während des Schaltvorgangs bildet. Durch die Analyse des Verhaltens der Ladungsträgerbergfronten, lässt sich sowohl der Einfluss von Schaltbedingungen auf den Plasmaabbau als auch der Unterschied von anodenseitigen und kathodenseitigen Stromfilamenten erklären. Die Erkenntnisse werden auf das moderne Diodenkonzept CIBH (Controlled Injection of Backside Holes) angewandt. Das Potential von CIBH-Dioden zur Verbesserung der Höhenstrahlfestigkeit und Stoßstromfestigkeit wird aufgezeigt. Schließlich wird das neue Anodenemitterkonzept IDEE (Inverse Injection Dependency of Emitter Efficiency) vorgestellt, welches in Kombination mit CIBH die Gesamteigenschaften von Dioden maßgeblich verbessert.
Die aktuelle Version Dissertation_Roman_Baburske_2011_11_21.pdf ist um einige Tippfehler bereinigt. This work concerns the reverse-recovery process of bipolar power diodes. The focus is the investigation of two undesirable phenomena. These are the sudden strong reverse-current decay and the destruction of the diode with a local melting of the chip in the active area.
The plasma layer, which arises during the switching period, is considered. An analysis of the plasma-layer front dynamics allows an understanding of the influence of switching parameters on the plasma extraction and the different behavior of anode-side and cathode-side filaments. The results of the analysis are used to describe the operation of the modern diode concept CIBH (Controlled Injection of Backside Holes). The potential of CIBH diodes to improve cosmic-ray stability and surge-current ruggedness is investigated. Finally, a new anode-emitter concept called IDEE (Inverse Injection Dependency of Emitter Efficiency) is introduced, which improves in combination with CIBH the overall performance of a power diode.
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Anwar, Mohammed Sadique, and Mohammed Sadique Anwar. "Investigation of Body Diode Reverse Recovery Characteristics in Lateral power MOSFETs." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/18217895382070975189.
碩士 亞洲大學 資訊工程學系碩士班 101 In the coming age where combustion engines vehicles and the ever increasing environmental pollution that are a consequence of combustion, alternatives are being researched and developed. An alternative to the combustion engine vehicle is an electric vehicle. However, development of more efficient motor controllers has been harmped by the lack of information regarding effect of reverse recovery associated with using Power MOSFETs are used as switches in a three-phase rectifier configuration to drive the motors. During the reverse recovery period, high currents flow back albeit for a short period of time, but can have devastating effects on sensitive circuitry. Some reverse recovery currents can go up to 80A or higher.
This thesis details the research and development of a circuit what will allow for the testing of the internal diode reverse recovery of a power MOSFET using conventional TCAD tools, which contain some results from the test circuit as well as demonstrates the effect of fingers, device-width and inductance on reverse recovery of LDMOS by unclamped inductive switching (UIS) circuit simulation for two dimensional (2D) and three dimensional (3D) devices. All the observations have been done for maximum pulse width at which device pass under UIS test. For UIS simulations the failure criteria is taken as the device temperature reaching a critical value of 650K. It has been shown that reverse recovery charge (Qrr) increased linearly with number of fingers, device width and inductance.
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Ke, Tsung-Yu, and 柯宗佑. "A 600V AlGaN/GaN Schottky Barrier Diode(SBD)on Si Substrate with Fast Reverse Recovery Time." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/57545138488455527148.
碩士 國立中央大學 電機工程研究所 99 Lateral AlGaN/GaN Schottky Barrier Diodes (SBDs) on Si substrate have been fabricated and characterized. AlGaN/GaN hetero-junction layers were grown on 4-inch p-type Si (111) substrate with 2 ?m buffer layer.
The measurement of etching pit density (EPD) of GaN films on Si substrate is about 1.92×109 cm-2 by atomic force microscopy (AFM). The full width at half maximum value (FWHM) of x-ray diffraction rocking curve for the GaN film on Si (111) substrate is 536 arc-sec (002 reflection), which is related to the screw type dislocation and resulted leakage current. The Hall measurement showed the mobility of 1430 cm2 /V-s with a sheet carrier density of 9.8?1012 cm-2 for the AlGaN/GaN structure across the wafer.
The AlGaN/GaN SBDs were implemented by Ti/Al/Ni/Au Ohmic and Ni/Au Schottky contacts. The Ohmic contacts were deposited on both side of Schottky contact with equal distance. The Schottky-to-Ohmic contact distance (LGS) was varied from 10 to 30 ?m in this study. The specific on-state resistance (RON) was 1.3 m?-cm2, while the forward turn-on voltage was 1.4 V at the current density of 100 A/cm2 for device with LGS = 10 ?m. The measured reverse breakdown voltage (VB) at room temperature was up to 600 V without edge terminal scheme. The measured VB is not function of LGS, which mainly depends on the buffer layer structure.
The figure-of-merit is defined (VB)2/RON, that was 277 MWcm-2. And reverse recovery time was < 10 ns for device (without package) switched from a forward current density of ~720 A/cm2 (1 A) to a reverse bias of 30 V with di/dt of 100 A/?s.
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Felsl, Hans Peter. "Silizium- und SiC-Leistungsdioden unter besonderer Berücksichtigung von elektrisch-thermischen Kopplungseffekten und nichtlinearer Dynamik." Doctoral thesis, 2009. https://monarch.qucosa.de/id/qucosa%3A19253.
Diese Arbeit befasst sich mit Hochleistungsdioden aus den Halbleitermaterialen Silizium und Siliziumkarbid. Analysiert werden die statischen und dynamischen Schalteigenschaften. Bei den SiC-Bauelementen handelt es sich um unipolare Schottky-Dioden und bei den Silizium-Dioden um bipolare pin-Dioden. Bei den SiC-Schottky-Dioden liegt der Schwerpunkt auf der Analyse des statischen Durchbruchverhaltens von Randstrukturen und auf der Untersuchung der Selbsterwärmung bei Einzel- und Mehrpulsbelastung. Bei den bipolaren Silizium-Dioden wird das Durchbruchverhalten bei niedrigen und hohen Stromdichten untersucht. Aus den Sperrcharakteristiken, die positiv und negativ differentielle Widerstandsäste aufweisen, lassen sich Schlussfolgerungen auf das dynamische Verhalten ziehen. Das Abschaltverhalten (reverse recovery) der mit Plasma überschwemmten Bauelemente wird zuerst im Hinblick auf den Einfluss von Strukturparametern untersucht, um die prinzipiellen Einflussgrößen zu erläutern. Dann folgen die Ergebnisse zur Filamentbildung, die bei den hohen Belastungen der Bauelemente während des Kommutierungsprozesses auftreten können. Die auftretenden Filamentstrukturen werden analysiert und - soweit möglich - Einflussgrößen herausgearbeitet. Schließlich wird noch auf den Einfluss von Randstrukturen auf das Filamentierungsverhalten, die als Inhomogenität in jedem Bauelement vorhanden sind, eingegangen.
Conference papers on the topic "Reverse Recovery; Diode; LDMOS":
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Loong Choo, Vin, Martin Pfost, Jorg Gessner, Klaus Heinrich, Uwe Eckoldt, Madelyn Liew, and Yang Hao. "Reverse Recovery and Carrier Lifetime in Body Diodes of LDMOS Transistors." In 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2021. http://dx.doi.org/10.23919/ispsd50666.2021.9452223.
Rodriguez Latorre, Jose A., Manuel A. Jimenez, and Rogelio Palomera. "Automated wafer-level measurement of LDMOS reverse recovery parameters." In 2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS). IEEE, 2012. http://dx.doi.org/10.1109/mwscas.2012.6292209.
Bernal, Carlos, and Manuel Jimenez. "Automated characterization of reverse recovery parameters in high speed LDMOS devices." In 2016 IEEE 59th International Midwest Symposium on Circuits and Systems (MWSCAS). IEEE, 2016. http://dx.doi.org/10.1109/mwscas.2016.7870124.
Bernal, Carlos J., and Manuel Jiménez. "A Virtual Instrument Environment to Characterize Reverse Recovery Parameters in LDMOS Devices." In The Fourteen LACCEI International Multi-Conference for Engineering, Education, and Technology: “Engineering Innovations for Global Sustainability”. Latin American and Caribbean Consortium of Engineering Institutions, 2016. http://dx.doi.org/10.18687/laccei2016.1.1.346.
Razavian, Sam, and Aydin Babakhani. "A THz Pulse Radiator Based on PIN Diode Reverse Recovery." In 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS). IEEE, 2019. http://dx.doi.org/10.1109/bcicts45179.2019.8972736.
Wang, Zhaohui, Jiajia Ouyang, Junming Zhang, Xinke Wu, and Kuang Sheng. "Analysis on reverse recovery characteristic of SiC MOSFET intrinsic diode." In 2014 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2014. http://dx.doi.org/10.1109/ecce.2014.6953782.
Matsui, R., D. Suzuki, Y. Tanimoto, M. Kitamura, H. Kikuchihara, H. J. Mattausch, and M. Miura-Mattausch. "Modeling of reverse recovery effect for embedded diode in SJ MOSFET." In 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2015. http://dx.doi.org/10.1109/edssc.2015.7285129.
Pulvirenti, Mario, Angelo G. Sciacca, Luciano Salvo, Massimo Nania, Giacomo Scelba, and Giuseppe Scarcella. "Body Diode Reverse Recovery Effects on SiC MOSFET Half-Bridge Converters." In 2020 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2020. http://dx.doi.org/10.1109/ecce44975.2020.9236330.
Krihely, Natan, and Sam Ben-Yaakov. "Modeling and evaluation of diode reverse recovery in discrete-transition simulators." In 2010 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2010. http://dx.doi.org/10.1109/ecce.2010.5618421.
Peng Zhang, Xuhui Wen, Yulin Zhong, and Jun Liu. "A simulation research on the reverse recovery characteristics of PIN diode." In 2011 International Conference on Electric Information and Control Engineering (ICEICE). IEEE, 2011. http://dx.doi.org/10.1109/iceice.2011.5777366.
