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Journal articles on the topic 'Reverse saturation current'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Dang, Sanlei, Yong Xiao, Baoshuai Wang, et al. "A High-Precision Error Calibration Technique for Current Transformers under the Influence of DC Bias." Energies 16, no. 24 (2023): 7917. http://dx.doi.org/10.3390/en16247917.

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A bias current in the power system will cause saturation of the measuring current transformer (CT), leading to an increase in measurement error. Therefore, in this paper, we first conducted measurements of the direct current component in a 10 kV distribution system. Subsequently, a reverse extraction method for the CT distorted current under direct current bias conditions based on Random Forest Classification (RFC) and Long Short-Term Memory (LSTM) was proposed. This method involves two stages for the reverse extraction of CT distorted currents under direct current bias conditions. In the offl

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2

Dandoussou, Abraham, Martin Kamta, Laurent Bitjoka, Patrice Wira, and Alexis Kuitché. "Simulations Based on Experimental Data of the Behaviour of a Monocrystalline Silicon Photovoltaic Module." Journal of Solar Energy 2015 (August 31, 2015): 1–9. http://dx.doi.org/10.1155/2015/169015.

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The performance of monocrystalline silicon cells depends widely on the parameters like the series and shunt resistances, the diode reverse saturation current, and the ideality factor. Many authors consider these parameters as constant while others determine their values based on the I-V characteristic when the module is under illumination or in the dark. This paper presents a new method for extracting the series resistance, the diode reverse saturation current, and the ideality factor. The proposed extraction method using the least square method is based on the fitting of experimental data rec

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Dolgopyatova, Anna V., and Oleg V. Varlamov. "Intermodulation distortion in current mode and bridge class D switching amplifiers with resistive load." T-Comm 17, no. 3 (2023): 4–13. http://dx.doi.org/10.36724/2072-8735-2023-17-3-4-13.

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The article is a continuation of the topic consideration of reverse intermodulation distortions analysis in class D switching generators with a resistive load. Similar to the approach used for the voltage-switched circuit in the previous authors work, a theoretical analysis of the reverse intermodulation distortion in class D current-switched circuit and in the bridge circuit is carried out. For both configurations, expressions for the output spectrum are written and the dependences of intermodulation distortion on non-ideal element parameters and operating modes are considered. A comparison o

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CZARKOWSKI, DARIUSZ, and MARIAN K. KAZIMIERCZUK. "STATIC CHARACTERISTICS OF MOS-CONTROLLED THYRISTORS — ANALYSIS, SIMULATION, AND EXPERIMENTAL RESULTS." Journal of Circuits, Systems and Computers 05, no. 01 (1995): 65–80. http://dx.doi.org/10.1142/s0218126695000060.

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An equation for the iK-vAK static forward characteristic of an MOS-controlled thyristor (MCT) is derived using a four-transistor equivalent model of the device. The Ebers–Moll large-signal model is used for n-p-n and p-n-p bipolar transistors. The equation is similar to that for forward-biased diodes. The equivalent saturation current of the MCT is a function of both the saturation currents and the forward and reverse current gains of the n-p-n and p-n-p transistors. Effects of these parameters on the MCT equivalent saturation current are investigated. Voltages and currents of all transistors

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5

Khairi, M. Azim, Rosminazuin Ab Rahim, Norazlina Saidin, Yusof Abdullah, and Nurul Fadzlin Hasbullah. "Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation." Bulletin of Electrical Engineering and Informatics 8, no. 2 (2019): 428–37. http://dx.doi.org/10.11591/eei.v8i2.1503.

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This paper investigates on the reaction of 10 and 15MGy, 3MeV electron irradiation upon off-the-shelves (commercial) Silicon Carbide Schottky diodes from Infineon Technologies (model: IDH08SG60C) and STMicroelectronics (model: STPSC806). Such irradiation reduces the forward-bias current. The reduction is mainly due to the significant increase of the series resistance (i.e. Infineon: 1.45Ω at before irradiation → 121×103 Ω at 15MGy); STMicroelectronics: 1.44Ω at before irradiation → 2.1×109 Ω at 15MGy). This increase in series resistance gives 4.6 and 8.2 orders of magnitude reduction for the f

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6

Müller, Jens, Karsten Bothe, Sandra Herlufsen, Helge Hannebauer, Rafel Ferré, and Rolf Brendel. "Reverse saturation current density imaging of highly doped regions in silicon: A photoluminescence approach." Solar Energy Materials and Solar Cells 106 (November 2012): 76–79. http://dx.doi.org/10.1016/j.solmat.2012.05.026.

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7

Müller, J., K. Bothe, S. Herlufsen, T. Ohrdes, and R. Brendel. "Reverse Saturation Current Density Imaging of Highly Doped Regions in Silicon Employing Photoluminescence Measurements." IEEE Journal of Photovoltaics 2, no. 4 (2012): 473–78. http://dx.doi.org/10.1109/jphotov.2012.2201916.

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8

KARGAR, ALIREZA. "MODELING OF COAXIAL CARBON NANOTUBE SCHOTTKY DIODES." Modern Physics Letters B 24, no. 17 (2010): 1883–90. http://dx.doi.org/10.1142/s0217984910024274.

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A carbon nanotube (CNT) Schottky diode based on coaxial geometry is presented. We show that coaxially gated CNT field effect transistors (FETs) with a p-type semiconducting single-walled carbon nanotube (s-SWNT) and asymmetric contacts can provide good diode characteristics. The effect of different physical and electrical parameters such as gate bias voltage, gate insulator thickness, and CNT diameter on the rectification current–voltage characteristics is investigated. We demonstrate that it is possible to tune the rectification characteristic, threshold voltage, reverse saturation current, a

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9

M., Azim Khairi, Ab. Rahim Rosminazuin, Saidin Norazlina, Abdullah Yusof, and Fadzlin Hasbullah Nurul. "Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation." Bulletin of Electrical Engineering and Informatics 8, no. 2 (2019): 428–37. https://doi.org/10.11591/eei.v8i2.1503.

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This paper investigates on the reaction of 10 and 15MGy, 3MeV electron irradiation upon off-the-shelves (commercial) Silicon Carbide Schottky diodes from Infineon Technologies (model: IDH08SG60C) and STMicroelectronics (model: STPSC806). Such irradiation reduces the forward-bias current. The reduction is mainly due to the significant increase of the series resistance (i.e. Infineon: 1.45Ω at before irradiation → 121×103 Ω at 15MGy); STMicroelectronics: 1.44Ω at before irradiation → 2.1×109 Ω at 15MGy). This increase in series resistance gives 4.6 a

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10

Kabbani, Adnan, and Honnurvali Mohamed Shaik. "PV cell Parameters Modeling and Temperature Effect Analysis." International Journal of Renewable Energy Development 10, no. 3 (2021): 563–71. http://dx.doi.org/10.14710/ijred.2021.33845.

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With the wide acceptance of modeling a PV cell by a single diode, a series and parallel resistors; many researchers have discussed different mathematical forms and iterative techniques to extract the values of these model elements depending on the key parameters provided by the manufacturer datasheet. This paper avoids iterative techniques and obtains the values of the five parameters of the one diode model by developing closed form expressions. The maximum error produced by this technique is 10% when compared to the exact values of the one diode model circuit built by Spice. The 10% maximum e

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11

Quan Thi Minh, Nguyet, Hoa Tran Thi Ngoc, Duy Nguyen Van, Hoa Nguyen Duc, and Hieu Nguyen Van. "INVESTIGATION OF I-V CHARACTERISTICS OF CARBON NANOTUBES AND TIN OXIDE NANOWIRES HETEROJUNCTION FOR GAS SENSING APPLICATIONS." Journal of Science Natural Science 67, no. 2 (2022): 94–102. http://dx.doi.org/10.18173/2354-1059.2022-0026.

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In this study, heterojunctions of carbon nanotubes (CNTs) and tin oxide nanowires (SnO2) were investigated to determine their electrical performance for gas sensing applications. The I–V characteristics of the heterojunction were measured in air and H2S gas. The electrical parameters such as barrier height ϕB, ideality factor n, series resistance Rs, and reverse saturation current Io were extracted from the I-V plots. In H2S gas, the barrier height ϕB and series resistance Rs are lower compared to air, whereas the ideality factor n and saturation current Io are higher. These findings are essen

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12

Titthikusumarn, Wiwa, Wittaya Jakpetch, and Wisut Titiroongruang. "Minority Carrier Lifetime Controlling of Mesa Diodes by Electron Beam Irradiation." Advanced Materials Research 811 (September 2013): 200–204. http://dx.doi.org/10.4028/www.scientific.net/amr.811.200.

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Mesa diodes were irradiation by electron beam at various doses of 25, 50 and 75 kGy to find optimum dose for controlling minority carrier lifetime. The experiment result shows that electron beam can reduce minority carrier lifetime from 24.3 ns to 14.8, 9.5 ns and 7.9 at dose of 25, 50 and 75 kGy, respectively. However, the result of electron beam is not only reduce the lifetime but also effected to other electrical properties such as increasing in saturation current density about 2-3 times, increasing in reverse leakage current density about 3 times. Dominant cause of reverse leakage is incre

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13

Ganiyev, Sabuhi, M. Azim Khairi, D. Ahmad Fauzi, Yusof Abdullah, and N. F. Hasbullah. "The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode." Физика и техника полупроводников 51, no. 12 (2017): 1721. http://dx.doi.org/10.21883/ftp.2017.12.45193.8646.

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In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Phib, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing ra

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14

Ivanov, Pavel A., Michael E. Levinshtein, John W. Palmour, Anant K. Agarwal, and Q. Jon Zhang. "Fast Switch-Off of High Voltage 4H–SiC npn BJTs from Deep Saturation Mode." Materials Science Forum 645-648 (April 2010): 1049–52. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1049.

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In this paper, very fast switch-off of high voltage 4H–SiC npn Bipolar Junction Transistors (BJTs) driven in deep saturation regime is reported. It is shown that the switch-off time can be as short as 4 ns if a reverse base current pulse is applied that provides forced minority carrier sweep out from the base.

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15

Sun, Chang-Hao, Chao Peng, Zhan-Gang Zhang, et al. "Mechanism of reverse gate leakage current reduction in AlGaN/GaN high-electron-mobility-transistor after 3-MeV proton irradiation." Applied Physics Letters 121, no. 7 (2022): 072109. http://dx.doi.org/10.1063/5.0102366.

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A 3-MeV proton irradiation experiment was carried out on an AlGaN/GaN high-electron-mobility-transistor (HEMT). The results showed that the device's saturation drain current decreased, the threshold voltage drifted positively, and the maximum transconductance decreased after irradiation. Interestingly, the forward gate leakage current was almost unchanged, and the reverse gate leakage current was reduced by two orders of magnitude. We found that this experimental phenomenon can be well explained by the Poole–Frenkel emission model. Proton irradiation led to deeper defect energy levels and high

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16

Ohshima, Takeshi, Takahiro Satoh, Masakazu Oikawa, Shinobu Onoda, Toshio Hirao, and Hisayoshi Itoh. "Charge Induced in 6H-SiC PN Diodes by Irradiation of Oxygen Ion Microbeams." Materials Science Forum 527-529 (October 2006): 1347–50. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1347.

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The charge generated in 6H-SiC n+p diodes by oxygen (O) ion irradiation at energies between 6 and 15 MeV was evaluated using the Transient Ion Beam Induced Current (TIBIC). The signal peak of the transient current increases, and the fall-time decreases with increasing applied reverse bias. The value of collected charge increases with increasing applied reverse bias, and the saturation of the collected charge was observed in high reverse bias regions (e.g. above 70 V in the case of 12MeV O-irradiation). The charge generated in the deeper region than the depletion layer is collected due to the "

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17

Weifeng Sun, Chunwei Zhang, Siyang Liu, et al. "Hot-Carrier-Induced Forward and Reverse Saturation Current Degradations for the n-Type Symmetric EDMOS Transistor." IEEE Electron Device Letters 35, no. 7 (2014): 690–92. http://dx.doi.org/10.1109/led.2014.2322364.

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Wen, Cao, Liang Song, Yu Huang, et al. "Research on Thyristor Reverse Recovery Behavior in High-Voltage Direct Current Transmission Converter Valves and Its Application in Integrated Protection Systems." Energies 17, no. 24 (2024): 6472. https://doi.org/10.3390/en17246472.

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The performance of converter valves is essential for the reliability and efficiency of high-voltage direct current (HVDC) transmission systems. Converter valves consist of multiple thyristor levels, each requiring regular testing to ensure proper functionality. Protective triggering tests play a crucial role in evaluating the safety and performance of these thyristors during maintenance. This study introduces a high-power experimental setup designed to investigate the effects of varying current levels and thermal stresses on the reverse recovery behavior of thyristors—a key performance indicat

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19

Karimov, Kh S., B. F. Irgaziev, M. Mahroof-Tahir, et al. "Electric Properties of Organic-on-Inorganic n-Si/VOPc Heterojunction." Eurasian Chemico-Technological Journal 11, no. 2 (2016): 115. http://dx.doi.org/10.18321/ectj304.

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In the current study vanadyl-phthalocyanine (VOPc) thin films were deposited by vacuum evaporation on n-Si substrate resulting in an organic-on-inorganic (n-Si/VOPc) heterojunctions. Ag films were deposited as electrodes. Thicknesses of the VOPc films were in the range of 100-300 nm. The dark I-V characteristics exhibited rectification behavior. The rectification ratio (RR) decreased from 4 to 0.4 as the thickness of the VOPc film decreased. The dark I-V characteristics were simulated by modified Schokley equation and spaace-charge limited currents (SCLC) approach. Investigations were carried

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20

Kumar, Naveen, and Subhash Chand. "Scrutinization of non‒saturation behaviour of reverse current‒voltage characteristics in Ni/SiO2/p-Si/Al diodes." Superlattices and Microstructures 160 (December 2021): 107088. http://dx.doi.org/10.1016/j.spmi.2021.107088.

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21

Iftiquar, S. M., and Junsin Yi. "Low Reverse Saturation Current Density of Amorphous Silicon Solar Cell Due to Reduced Thickness of Active Layer." Journal of Electrical Engineering and Technology 11, no. 4 (2016): 939–42. http://dx.doi.org/10.5370/jeet.2016.11.4.939.

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22

Wang, Gang, Ke Zhao, Tian Qiu, Xinsheng Yang, Yong Zhang, and Yong Zhao. "The error analysis of the reverse saturation current of the diode in the modeling of photovoltaic modules." Energy 115 (November 2016): 478–85. http://dx.doi.org/10.1016/j.energy.2016.08.098.

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23

Artusi, Alessandro, Tania Pouli, Francesco Banterle, and Oguz Ahmet Akyuz. "Automatic saturation correction for dynamic range management algorithms." Signal Processing: Image Communication, Elsevier 63 (February 1, 2018): 100–112. https://doi.org/10.1016/j.image.2018.01.011.

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High dynamic range (HDR) images require tone reproduction to match the range of values to the capabilities of a display. For computational reasons and given the absence of fully calibrated imagery, rudimentary color reproduction is often added as a post-processing step rather than integrated into tone reproduction algorithms. In the general case, this currently requires manual parameter tuning, and can be automated only for some global tone reproduction operators by inferring parameters from the tone curve. We present a novel and fully automatic saturation correction technique, suitable for an

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EL Ghazi, Haddou, Redouane En-nadir, Anouar Jorio, and Mohamed A. Basyooni-M. Kabatas. "High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance: A Study with 1 MeV Proton Irradiation." Materials 16, no. 21 (2023): 6977. http://dx.doi.org/10.3390/ma16216977.

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This study investigates the degradation of the silicon NPN transistor’s emitter-base junction, specifically the 2N2219A model, under both forward and reverse polarization. We examine the current–voltage characteristics under the influence of 1 MeV proton irradiation at various fluencies, which are 5.3×108,5.3×1010,5×1011,5×1012, and 5×1013 protons/cm², all conducted at 307 K. The experimental findings elucidate a pronounced dependency of diode parameters, including the reverse saturation current, series resistance, and the non-idealist factor, on the incident proton flow. This observation unde

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Ashish, Choubey. "Impact of Irradiance and Temperature on Electrical Parameters of Polycrystalline Photovoltaic Module: A Five Parameter Analysis." International Journal of Recent Technology and Engineering (IJRTE) 13, no. 2 (2024): 12–20. https://doi.org/10.35940/ijrte.B8085.13020724.

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<strong>Abstract: </strong>In the current era, adopting renewable energy is not just a choice but a necessity. The role of photovoltaic modules significantly influences this shift from conventional energy sources. The performance and parameters of these PV cells are greatly affected by both irradiance and temperature. While the standard test condition assumes 1000 watts/m² and 25°C temperature, the reality of solar geometry often alters these values, leading to changes in the electrical parameters of the PV cell. This study, which employs a five-parameter single-diode model, is of par

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Ram Kumar, P. V., Aman Khurana, and R. S. Mishra. "Behaviour of PV cell with variation in parameters." INTERNATIONAL JOURNAL OF ADVANCED PRODUCTION AND INDUSTRIAL ENGINEERING 3, no. 1 (2018): 11–13. http://dx.doi.org/10.35121/ijapie201801123.

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First electrical behavior i.e. short circuit current and open-circuit voltage is observed. The effect of different parameters on the I-V and P-V curve is studied considering uniform illumination. These parameters are insolation level, temperature, series resistance, shunt resistance, diode reverse saturation current. A variation on I-V and P-V curves are different with each parameter. With some parameters, the effect is significant while for others the effect is not so significant. For the parameters whose effect is not so significant large variation of inputs is taken for showing the effect.

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Yang, Wanli, Shuaiqi Fan, Yuxing Liang, and Yuantai Hu. "Prestress-loading effect on the current–voltage characteristics of a piezoelectric p–n junction together with the corresponding mechanical tuning laws." Beilstein Journal of Nanotechnology 10 (September 6, 2019): 1833–43. http://dx.doi.org/10.3762/bjnano.10.178.

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A model is proposed to study the diffusion of non-equilibrium minority carriers under the influence of a piezo potential and to calculate the corresponding current–voltage (I–V) characteristics of a piezoelectric p–n junction exposed to mechanical loading. An effective solution to describe this non-equilibrium process has been put forward including two concepts: the influence of prestress loading on p–n junctions in a quasi-electrostatic thermal equilibrium and the perturbation of small fields superposed on the obtained quasi-electrostatic solutions. A few useful results are obtained through t

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Ramkumar, P. V., R. S. Mishra, and Aman Khurana. "Variation in Maximum Power and Maximum Power point with different parameter analysis." INTERNATIONAL JOURNAL OF ADVANCED PRODUCTION AND INDUSTRIAL ENGINEERING 3, no. 1 (2018): 33–35. http://dx.doi.org/10.35121/ijapie201801128.

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Variation in Maximum power and Maximum power point i.e. voltage at which Maximum Power is observed with different parameters are studied. Parameters are insolation, temperature, series resistance, shunt resistance, and reverse saturation current of the diode. For this I-V and P-V characteristics with a variation of these parameters are analyzed. For finding out the Maximum PowerPoint, Perturb & Observe technique is used. Variation in these points is different with each parameter. All simulation work is done in MATLAB.

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Koffi, Azoda Hubert, Esau Abeka Armah, Koffi Ampomah-Benefo, and David Dodoo-Arhin. "A Step by Step Analytical Solution to the Single Diode Model of a Solar Cell." NUST Journal of Engineering Sciences 15, no. 2 (2022): 17–21. http://dx.doi.org/10.24949/njes.v15i2.728.

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Making use of previous results where the series resistance, Rs, and the light-generated current, IL, of a solar cell are determined through the knowledge of the open-circuit voltage, Voc, the short-circuit current, Isc, the voltage and current at the maximum power point, Vmp and Imp, respectively, a simple and analytical step-by-step approach has been developed to determine the shunt resistance, Rsh, the reverse saturation current, Is and the ideality factor, A, of a solar cell. Making use of these results and with the knowledge of the operating temperature, T, this work demonstrates that a si

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Setya, Winda. "KARAKTERISTIK RANGKAIAN EKIVALEN DIODA BLEND ORGANIK P3OT : PCBM." Journal of Teaching and Learning Physics 2, no. 2 (2017): 7–12. http://dx.doi.org/10.15575/jotalp.v2i2.6568.

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Has conducted research diode characteristics equivalent circuit of the organic blend P3OT: PCBM. In this study, the blend of P3OT:PCBM was sandwiched between a transparent indium tin oxide (ITO) electrode and an Al backside contact. The current-voltage characteristic of the diode was measured under the dark and illumination. In order to determine the electrical parameters of the diode, we employed an equivalent circuit model developed originally for inorganic diode. As a result, the series resistance decreases while the reverse saturation current density increases by decreasing the thickness o

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Yao, Jia Ling, Wen Ku Shi, and Jin Feng Lu. "Research on a Composite Polynomial Model for Magnetorheological Damper." Advanced Materials Research 482-484 (February 2012): 843–47. http://dx.doi.org/10.4028/www.scientific.net/amr.482-484.843.

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The reported mathematical models of magnetorheological (MR) damper cannot make a good tradeoff among reflecting the damper’s nonlinear behavior and controllability. Damping characteristic experiments have been conducted on a MR damper. A composite polynomial model has been proposed integrating the experimental investigation and the polynomial model, in which the plot of polynomial coefficient vs. current is divided into two sections to reflect the property of the current saturation, meanwhile, the affections of exciting amplitude and frequency are considered in this model. The reverse model of

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Strel'chuk, Anatoly M., Vitalii V. Kozlovski, and Alexander A. Lebedev. "Effect of Proton and Electron Irradiation on Current-Voltage Characteristics of Rectifying Diodes Based on 4H-SiC Structures with Schottky Barrier." Materials Science Forum 1004 (July 2020): 1081–87. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1081.

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Forward and reverse current-voltage (I-V) characteristics of commercial rectifying Schottky diodes (SDs) based on silicon carbide (4H-SiC, base layer doping level 3·1015 cm-3) have been studied under irradiation with 0.9 MeV electrons and 15 MeV protons. The starting diodes were characterized by a barrier height of ~1.5 eV and nearly ideal forward and reverse I-V characteristics. It was found that, at doses exceeding the threshold dose Dth, the series differential resistance Rs of the diodes grows as Rs ~ Dm (m = 10-15) and shows no tendency toward saturation. Dth ≈7·1015 cm-2 under electron i

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Razooqi, Mohammed A., Ameer F. Abdulameer, Adwan N. Hameed, Rasha A. Abdullaha, and Ehsan I. Sabbar. "The Electrical Characterization of p-CdTe/n-Si (111) Heterojunction Diode." Advanced Materials Research 702 (May 2013): 236–41. http://dx.doi.org/10.4028/www.scientific.net/amr.702.236.

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p-CdTe film has been deposited on n-Si(111) substrate by thermal evaporation technique. The prepared CdTe/Si heterojunction diodes have been annealed at 573K. The capacitance-voltage measurements have studied for the prepared heterojunctions under 2 KHz frequencies. The capacitance-voltage measurement indicated that these diodes are abrupt. The capacitance at zero bias, the built in voltage and the doping concentration increased after annealing process while the zero bias depletion region width is decreased. The carrier transport mechanism for CdTe/Si diodes in dark is tunneling-recombination.

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Woo, Sola, Juhee Jeon, and Sangsig Kim. "Prediction of Device Characteristics of Feedback Field-Effect Transistors Using TCAD-Augmented Machine Learning." Micromachines 14, no. 3 (2023): 504. http://dx.doi.org/10.3390/mi14030504.

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In this study, the device characteristics of silicon nanowire feedback field-effect transistors were predicted using technology computer-aided design (TCAD)-augmented machine learning (TCAD-ML). The full current–voltage (I-V) curves in forward and reverse voltage sweeps were predicted well, with high R-squared values of 0.9938 and 0.9953, respectively, by using random forest regression. Moreover, the TCAD-ML model provided high prediction accuracy not only for the full I-V curves but also for the important device features, such as the latch-up and latch-down voltages, saturation drain current,

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Breitenstein, Otwin, Jan Bauer, Pietro P. Altermatt, and Klaus Ramspeck. "Influence of Defects on Solar Cell Characteristics." Solid State Phenomena 156-158 (October 2009): 1–10. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.1.

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The current-voltage (I-V) characteristics of most industrial silicon solar cells deviate rather strongly from the exponential behavior expected from textbook knowledge. Thus, the recombination current may be orders of magnitude larger than expected for the given material quality and often shows an ideality factor larger than 2 in a wide bias-range, which cannot be explained by classical theory either. Sometimes, the cells contain ohmic shunts although the cell’s edges have been perfectly insolated. Even in the absence of such shunts, the characteristics are linear or super-linear under reverse

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Ifland, Benedikt, Patrick Peretzki, Birte Kressdorf, et al. "Current–voltage characteristics of manganite–titanite perovskite junctions." Beilstein Journal of Nanotechnology 6 (July 7, 2015): 1467–84. http://dx.doi.org/10.3762/bjnano.6.152.

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After a general introduction into the Shockley theory of current voltage (J–V) characteristics of inorganic and organic semiconductor junctions of different bandwidth, we apply the Shockley theory-based, one diode model to a new type of perovskite junctions with polaronic charge carriers. In particular, we studied manganite–titanate p–n heterojunctions made of n-doped SrTi1− y Nb y O3, y = 0.002 and p-doped Pr1− x Ca x MnO3, x = 0.34 having a strongly correlated electron system. The diffusion length of the polaron carriers was analyzed by electron beam-induced current (EBIC) in a thin cross pl

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Bodunrin, Joseph Oluwadamilola, Duke Ateyh Oeba, and Sabata Jonas Moloi. "Exploring the Impact of Fe-Implantation on the Electrical Characteristics of Al/p-Si Schottky Barrier Diodes." Electronic Materials 4, no. 2 (2023): 95–109. http://dx.doi.org/10.3390/electronicmat4020008.

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The effects of Fe-implantation on the electrical characteristics of Au/p-Si Schottky barrier diodes (SBDs) were studied using current–voltage (I–V) and capacitance–voltage (C–V) techniques. The Rutherford Backscattering Spectrometry (RBS) and Energy Dispersive Spectroscopy (EDS) results showed that Fe ions are well implanted and present in the Fe-implanted Si material. The acquired results from I–V and C–V analysis showed that the diodes were well fabricated, and Fe-implantation changed the normal diode’s I–V behaviour from typical exponential to ohmic. The ohmic behaviour was described in ter

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Kulas, John T., Rachael Klahr, and Lindsey Knights. "Confound It!" European Journal of Psychological Assessment 35, no. 6 (2019): 855–67. http://dx.doi.org/10.1027/1015-5759/a000459.

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Abstract. Many investigators have noted “reverse-coding” method factors when exploring response pattern structure with psychological inventory data. The current article probes for the existence of a confound in these investigations, whereby an item’s level of saturation with socially desirable content tends to covary with the item’s substantive scale keying. We first investigate its existence, demonstrating that 15 of 16 measures that have been previously implicated as exhibiting a reverse-scoring method effect can also be reasonably characterized as exhibiting a scoring key/social desirabilit

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Karim, Md Enamul, A. T. M. Saiful Islam, Yuki Nasuno, Abdul Kuddus, Ryo Ishikawa, and Hajime Shirai. "Solution-processed TiO2 as a hole blocking layer in PEDOT:PSS/n-Si heterojunction solar cells." EPJ Photovoltaics 11 (2020): 7. http://dx.doi.org/10.1051/epjpv/2020004.

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The junction properties at the solution-processed titanium dioxide (TiO2)/n-type crystalline Si(n-Si) interface were studied for poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/n-Si heterojunction solar cells by the steady-state photovoltaic performance and transient reverse recovery characterizations. The power conversion efficiency could be increased from 11.23% to 13.08% by adjusting the layer thickness of TiO2 together with increasing open-circuit voltage and suppressed dark saturation current density. These findings originate from the enhancement of the carrier collec

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HE, BO, JING XU, HUAIZHONG XING, CHUNRUI WANG, YING GUO, and HONGWEI LU. "OBSERVATION OF NANOSPHERICAL n-SnO2/p-Si HETEROJUNCTION FABRICATED BY ULTRASONIC SPRAY PYROLYSIS TECHNIQUE." Surface Review and Letters 20, no. 05 (2013): 1350052. http://dx.doi.org/10.1142/s0218625x13500522.

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Thin film of tin oxide ( SnO 2) was prepared on p-type polished silicon wafer by ultrasonic spray pyrolysis technique using SnCl 4 precursor solution to fabricate nanospherical n - SnO 2/ p - Si heterojunction photoelectric device. Deposition of film was achieved at 400°C substrate temperature. The self-made ultrasonic spray pyrolysis system is very cheap and convenient. The microstructural, optical and electrical properties of the SnO 2 film were characterized by XRD, SEM, XPS, UV-VIS spectrophotometer, four point probe and Hall effect measurement, respectively. The SnO 2 film has the nanosph

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Lee, Jongwon, and Christiana B. Honsberg. "Numerical Analysis of the Detailed Balance of Multiple Exciton Generation Solar Cells with Nonradiative Recombination." Applied Sciences 10, no. 16 (2020): 5558. http://dx.doi.org/10.3390/app10165558.

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In this study, we analyzed the nonradiative recombination impact of multiple exciton generation solar cells (MEGSCs) with a revised detailed balance (DB) limit. The nonideal quantum yield (QY) of a material depends on the surface defects or the status of the material. Thus, its QY shape deviates from the ideal QY because of carrier losses. We used the ideal reverse saturation current variation in the DB of MEGSCs to explain the impact of nonradiative recombination. We compared ideal and nonideal QYs with the nonradiative recombination into the DB of MEGSCs under one-sun and full-light concentr

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Xiao, Zong Hu. "Photoelectric Properties of High Power GaN Based LEDs on Cu/Cr Composite Substrates." Advanced Materials Research 1004-1005 (August 2014): 362–66. http://dx.doi.org/10.4028/www.scientific.net/amr.1004-1005.362.

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The thermal problems of high power LEDs could be solved effectively and the stability of the device could be also improved, employing metal substrates for high power LEDs. In this paper,high power GaN based blue LEDs on metal substrates were successfully prepared by transferring GaN-based LED epitaxial film on Si (111) substrates to the Cu/Cr composite substrates employing electroplating method. The forward voltage of the as-prepared LEDs was 3.4 V, when the forward operating current was 350 mA, which was similar with the level of market products. The corresponding voltage could reach 25 V whe

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Lee, Jeong Hyuk, Byeong Hyeon Lee, Jeonghun Kang, et al. "Characteristics and Electronic Band Alignment of a Transparent p-CuI/n-SiZnSnO Heterojunction Diode with a High Rectification Ratio." Nanomaterials 11, no. 5 (2021): 1237. http://dx.doi.org/10.3390/nano11051237.

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Transparent p-CuI/n-SiZnSnO (SZTO) heterojunction diodes are successfully fabricated by thermal evaporation of a (111) oriented p-CuI polycrystalline film on top of an amorphous n-SZTO film grown by the RF magnetron sputtering method. A nitrogen annealing process reduces ionized impurity scattering dominantly incurred by Cu vacancy and structural defects at the grain boundaries in the CuI film to result in improved diode performance; the current rectification ratio estimated at ±2 V is enhanced from ≈106 to ≈107. Various diode parameters, including ideality factor, reverse saturation current,

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Jawad, M. J., Haider Y. Hammod, and Amer B. Dheyab. "Effect of Thermal Annealing Temperatures on MSM Photo Detector Based on Ge-like Micro Flowers in the Dark Mode." TELKOMNIKA Indonesian Journal of Electrical Engineering 16, no. 3 (2015): 502. http://dx.doi.org/10.11591/tijee.v16i3.1640.

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In this research , a current density of J = 7.5 mA/cm2 was applied over a constant duration of 2 h to grow Ge-like microflowers on Si. To fabricate a photodetector, Pd was deposited by RF-sputtering as metal contact with Ge. The samples were subjected to rapid thermal annealing (RTA) in ambient N2 at 100,200° and 300°C for 10 min. By screening the samples from electrical noise, the electrical characteristics through current-voltage measurements were carried out at room temperature before and after annealing. The measurements were performed in the dark, white light and UV illuminations. The for

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Lindner, T., G. Paasch, and S. Scheinert. "Influence of distributed trap states on the characteristics of top and bottom contact organic field-effect transistors." Journal of Materials Research 19, no. 7 (2004): 2014–27. http://dx.doi.org/10.1557/jmr.2004.0265.

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Numerical simulations of organic field-effect transistors (OFET) of bottom and top contact (BOC, TOC) design with different source/drain contacts were carried out considering an exponential distribution of trap states in the gap of the active layer (a-Si model). For ohmic contacts, the current-voltage characteristics are similar to the trap-free case and there is not much difference between the two designs. However, the currents are lower due to immobile trapped charges, the threshold voltage is shifted, and the inverse subthreshold slope increases due to trap recharging. An analytical approxi

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Cai, Shuyu, Hangjing Luo, Xiaohong Wang, and Yitong Yao. "An improved analytical switch model of GaN HEMTs for bridge-leg configurations considering controlled channel current in the reverse saturation region." Journal of Physics: Conference Series 3043, no. 1 (2025): 012150. https://doi.org/10.1088/1742-6596/3043/1/012150.

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Abstract This paper proposes an improved analytical switch model for GaN HEMTs in bridge-leg configurations to address the limitations of traditional models that rely on an anti-parallel diode assumption. Specifically, the proposed model considers the controlled channel current characteristics in the reverse saturation region, which are unique to GaN HEMTs due to their two-dimensional electron gas (2DEG) structure. Moreover, the impact of dead time is thoroughly analyzed, leading to the formulation of two distinct cases: one for excessively long dead time and another for excessively short dead

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Xu, Xiaobo, Xiaocheng Zhang, Zhaowu Huang, et al. "Current Characteristics Estimation of Si PV Modules Based on Artificial Neural Network Modeling." Materials 12, no. 18 (2019): 3037. http://dx.doi.org/10.3390/ma12183037.

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In the photovoltaic (PV) field, the outdoor evaluation of a PV system is quite complex, due to the variations of temperature and irradiance. In fact, the diagnosis of the PV modules is extremely required in order to maintain the optimum performance. In this paper, an artificial neural network (ANN) is proposed to build and train the model, and evaluate the PV module performance by mean bias error, mean square error and the regression analysis. We take temperature, irradiance and a specific voltage for input, and a specific current value for output, repeat several times in order to obtain an I-

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Zainab Kadhom Hamzh1. "Analysis and Study of the Electrical Properties of Nano ZnO.Cu/Al Schottky Diode." Mustansiriyah Journal of Pure and Applied Sciences 2, no. 2 (2024): 48–55. http://dx.doi.org/10.47831/mjpas.v2i2.168.

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Schottky diode (semiconductor/metal) ZnO.Cu/Al was prepared by using the bar-coating method to prepare films of ZnO.Cu on aluminum substrate. Powders of zinc oxide doped with copper were previously prepared with different Cu doping ratios. These powders were characterized using X-ray diffraction showed the have a polycrystalline structure, and also using a field emission scanning electron microscope to confirm the morphology of the prepared powders, which it turned out to be nanostructures with a relatively uniform distribution. The properties of the prepared Schottky diode were studied, and t

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TAHIR, MUHAMMAD, MUHAMMAD HASSAN SAYYAD, FAZAL WAHAB, and DIL NAWAZ KHAN. "THE ELECTRICAL CHARACTERIZATION OF Ag/N-BuHHPDI/p-Si HETEROJUNCTION BY CURRENT–VOLTAGE CHARACTERISTICS." Modern Physics Letters B 27, no. 11 (2013): 1350080. http://dx.doi.org/10.1142/s0217984913500802.

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This paper reports the fabrication of Ag / N - BuHHPDI /p- Si heterojunction diode by evaporating a layer of organic compound N-Butyl-N'-(6-hydroxyhexyl) perylene-3,4,9,10-tetracarboxylicacid-diimide (N-BuHHPDI) on top of the p- Si . The electronic properties of the heterojunction have been studied, in dark at a temperature of 300 K, by conventional current–voltage (I–V) method, Norde's method and Cheung's technique. By analyzing conventional I–V characteristics, the device exhibited rectifying behavior with a rectification ratio of 62.67 at ± 5.8 V. From the forward biased I–V measurements, t

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Wille, Wolfgang, Ralph Rothemund, Gerald Meinhardt, and Wolfgang Jantsch. "Implementation of Highly Resistive Emitter Solar Cells in a Production Environment using an Inline Doping System." Solid State Phenomena 178-179 (August 2011): 441–45. http://dx.doi.org/10.4028/www.scientific.net/ssp.178-179.441.

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Instead of selective emitter technology we investigate an alternative way to optimize contact formation and increased blue responsivity of highly resistive emitter solar cells using screen print technology for the deposition of the frontside metallization grid. We show with the aid of an inline doping/diffusion set-up at Blue Chip Energy that tuning the emitter doping profile is an alternative way to reduce the effect of Auger recombination in the spectral range from 300 nm to 600 nm. By properly choosing the process conditions we were able to minimize the detrimental effect of the low surface

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