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Journal articles on the topic 'RF amplifier'

Author: Grafiati

Published: 4 June 2021

Last updated: 14 February 2022

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1

Yue, Kai, and Xu Biao Ma. "An Adjustable Linearization for RF Power Amplifier." Applied Mechanics and Materials 241-244 (December 2012): 703–8. http://dx.doi.org/10.4028/www.scientific.net/amm.241-244.703.

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This paper presented an adjustable analog predistortion linearization method for RF power amplifier. The linearization includes an attenuator, a phase shifter and an anti-parallel Schottky diode pair with DC bias, through adjusting these components, we can adjust predistortion characteristic of the linearization to be complementary to distortion characteristic of RF power amplifier. By cascading this linearization with power amplifier, we can improve linearity of amplifier. Firstly, we simulated the proposed predistortion linearization with software ADS, then the linearization was manufactured

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2

Memioglu, O., O. Kazan, A. Karakuzulu, et al. "Development of X-Band Transceiver MMIC’s Using GaN Technology." Advanced Electromagnetics 8, no. 2 (2019): 1–9. http://dx.doi.org/10.7716/aem.v8i2.1012.

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This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be used in transmit/receive modules which are developed with GaN technology. For Transmit chain two 25 W high power amplifiers that are tuned between 8-10 GHz and 10-12 GHz bands are designed. A low noise amplifier with 2 W survivability and less than 2dB noise figure is designed for receive chain Furthermore, an RF switch that is capable of withstanding 25 W RF power is developed for the selection of transmit or receive chains. Measurement results show that both power amplifiers produce 25 W of p

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3

Lee, Tze Kiu, Wing Shing Chan, and T. Y. M. Siu. "Power amplifier/low noise amplifier RF switch." Electronics Letters 36, no. 24 (2000): 1983. http://dx.doi.org/10.1049/el:20001404.

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4

Sajedin, Maryam, I. T. E. Elfergani, Jonathan Rodriguez, Raed Abd-Alhameed, and Monica Fernandez Barciela. "A Survey on RF and Microwave Doherty Power Amplifier for Mobile Handset Applications." Electronics 8, no. 6 (2019): 717. http://dx.doi.org/10.3390/electronics8060717.

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This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications,

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5

Watkins, G. T. "High bandwidth current mode amplifier for envelope modulated RF amplifiers." Electronics Letters 46, no. 13 (2010): 894. http://dx.doi.org/10.1049/el.2010.1376.

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6

Qin, Wei, Yong Tao Li, Ying Jie Li, and Xiao Ping Xu. "High Efficiency 500W RF Generator." Advanced Materials Research 383-390 (November 2011): 1333–36. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.1333.

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In the previous literature about RF generator, Efficiency of output of RF generator can reach 60-70 percent. In this paper, a new 500W RF generator with high efficiency and high stability is designed and fabricated for plasma applications. The efficiency of a power amplifier in the RF generator is improved by using Class-E amplifier. The Class-E power amplifiers described here is based on a load network synthesized to have a transient response which maximizes power efficiency even if the active device switching times are substantial fractions of the AC cycle. For that circuit, the author measu

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7

Nadir, Z., and F. Touati. "Class-E Amplifier Design Improvements for GSM Frequencies." Journal of Engineering Research [TJER] 7, no. 2 (2011): 74. http://dx.doi.org/10.24200/tjer.vol8iss1pp74-82.

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Efficient power amplifiers are essential in portable battery-operated systems such as mobile phones. Also, the power amplifier (PA) is the most power-consuming building block in the transmitter of a portable system. This paper investigates how the efficiency of the power amplifier (which is beneficial for multiple applications in communcation sector) can be improved by increasing the efficiency of switching mode class E power amplifiers for frequencies of 900 MHz and 1800 MHz. The paper tackles modeling, design improvements and verification through simulation for higher efficiencies. This is t

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8

Vasić, Miroslav, Oscar García, J. J. A. Oliver, et al. "Envelope Amplifier Based on Switching Capacitors for High-Efficiency RF Amplifiers." IEEE Transactions on Power Electronics 27, no. 3 (2012): 1359–68. http://dx.doi.org/10.1109/tpel.2011.2163646.

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9

Hu, Yushi, and Slim Boumaiza. "Doherty Power Amplifier Distortion Correction Using an RF Linearization Amplifier." IEEE Transactions on Microwave Theory and Techniques 66, no. 5 (2018): 2246–57. http://dx.doi.org/10.1109/tmtt.2018.2815562.

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10

Malevich, I. Yu, та P. V. Zayats. "Аdaptive broadband low-noise RF amplifier". Doklady BGUIR 18, № 6 (2020): 66–74. http://dx.doi.org/10.35596/1729-7648-2020-18-6-66-74.

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Adaptive broadband low-noise radio frequency amplifiers (ABLNRFA) are widely used in the construction of systems for protecting radio receiving paths from nonlinear damage in a non-stationary electromagnetic environment (EME). One of the promising focus areas on the creation of ABLNRFA is the development of devices in the class of circuits with switched networks. The creation of such devices has certain features, since, along with the need to ensure a low noise figure and digital control of the regulation characteristic, it is required to provide high linearity and a large dynamic range (DR) o

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11

Crespo-Cadenas, C., J. Reina-Tosina, and M. J. Madero-Ayora. "Amplifier Nonlinear Modeling with RF Pulses." IEEE Transactions on Microwave Theory and Techniques 56, no. 11 (2008): 2536–44. http://dx.doi.org/10.1109/tmtt.2008.2004896.

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12

Ravelo, B. "Baseband NGD circuit with RF amplifier." Electronics Letters 47, no. 13 (2011): 752–54. http://dx.doi.org/10.1049/el.2011.1227.

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13

Cochran, S. R. "Microwave amplifier based RF optical receivers." Electronics Letters 23, no. 24 (1987): 1283. http://dx.doi.org/10.1049/el:19870889.

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14

Omer, Mohammad, and Farasat Munir. "Interference cancellation for higher harmonics of supply-modulated efficient RF power amplifier systems." International Journal of Microwave and Wireless Technologies 9, no. 4 (2016): 729–39. http://dx.doi.org/10.1017/s1759078716000933.

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In building highly efficient transmitters of today, one is forced to sacrifice linearity for efficiency. Some of the highest power amplifier efficiency figures are reported by envelope tracking (ET) amplifiers. These amplifiers can generate strong higher-order harmonics, which can lead to interference with receivers operating at the harmonic frequencies. Using non-linear interference cancellation, we can help to remove the interference being caused in those receivers. This paper looks at the problem of modeling the third and second-order harmonic emission from an ET amplifier. It derives the n

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15

Jain, Akhilesh, P. R. Hannurkar, D. K. Sharma, et al. "Design and characterization of 50 kW solid-state RF amplifier." International Journal of Microwave and Wireless Technologies 4, no. 6 (2012): 595–603. http://dx.doi.org/10.1017/s175907871200061x.

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Radio frequency (RF) and microwave amplifier research has been largely focused on solid-state technology in recent years. This paper presents design and performance characterization of a 50-kW modular solid-state amplifier, operating at 505.8 MHz. It includes architecture selection and design procedures based on circuit and EM simulations for its building blocks like solid-state amplifier modules, combiners, dividers, and directional couplers. Key performance objectives such as efficiency, return loss, and amplitude/phase imbalance are discussed for this amplifier for real-time operation. This

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16

Kim, Bruce C., Sai Evana, and Rahim Kasim. "Packaging of MEMS for Integrated RF Circuit Verifications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, DPC (2011): 000926–51. http://dx.doi.org/10.4071/2011dpc-tp24.

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This paper provides development of MEMS switches and packaging of MEMS to test radio frequency circuits used in wireless products such as cell phones and network routers. We discuss fabrication of MEMS using low voltage magnetic materials and their configurations to achieve the optimum switch to test RF low noise amplifiers. We have accomplished a very unique methodology to test low noise amplifiers using built-in sellf-test technique and our MEMS switches are proposed to achieve the verification of low noise amplifiers. Furthermore, we have used MEMS switches that we developed to perform self

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17

Kim, Seung-Yong, and Choong-Mo Nam. "RF High Power Amplifier Module using AlN Substrate." Journal of the Korean Institute of Electrical and Electronic Material Engineers 22, no. 10 (2009): 826–31. http://dx.doi.org/10.4313/jkem.2009.22.10.826.

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18

Lakhwal, Prabhat Singh, Maninder Pal, and Vijay Kumar. "Adaptive Lineariser for RF Wideband Power Amplifier." International Journal of Advances in Computing and Information Technology 1, no. 4 (2012): 369–77. http://dx.doi.org/10.6088/ijacit.12.14004.

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19

Raab, Frederick. "Efficiency of Doherty RF Power-Amplifier Systems." IEEE Transactions on Broadcasting BC-33, no. 3 (1987): 77–83. http://dx.doi.org/10.1109/tbc.1987.266625.

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20

Raab, F. "Efficiency of Outphasing RF Power-Amplifier Systems." IEEE Transactions on Communications 33, no. 10 (1985): 1094–99. http://dx.doi.org/10.1109/tcom.1985.1096219.

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21

Tarasov, M. A., G. V. Prokopenko, V. P. Koshelets, I. L. Lapitskaya, and L. V. Filippenko. "Integrated rf amplifier based on dc SQUID." IEEE Transactions on Appiled Superconductivity 5, no. 2 (1995): 3226–29. http://dx.doi.org/10.1109/77.403278.

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22

Nguyen, N. M., and R. G. Meyer. "A Si bipolar monolithic RF bandpass amplifier." IEEE Journal of Solid-State Circuits 27, no. 1 (1992): 123–27. http://dx.doi.org/10.1109/4.109567.

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23

Eskelinen, P. "High-linearity RF amplifier design [Book Review]." IEEE Aerospace and Electronic Systems Magazine 16, no. 10 (2001): 17–18. http://dx.doi.org/10.1109/maes.2001.961453.

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24

Li, Zheng-Hong, and Hong-Quan Xie. "RF phase jitter in a klystron amplifier." Chinese Physics C 35, no. 9 (2011): 851–54. http://dx.doi.org/10.1088/1674-1137/35/9/012.

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25

Ch, Syafaruddin, Sudi Mariyanto Al Sasongko, I. Made Budi Suksmadana, Cahyo Mustiko Okta Muvianto, and Suthami Ariessaputra. "Low Cost RF Amplifier for Community TV." IOP Conference Series: Materials Science and Engineering 105 (January 2016): 012030. http://dx.doi.org/10.1088/1757-899x/105/1/012030.

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26

Hu, Xueqing, Zheng Gong, Yin Shi, and Fa Foster Dai. "A wideband RF amplifier for satellite tuners." Journal of Semiconductors 32, no. 11 (2011): 115002. http://dx.doi.org/10.1088/1674-4926/32/11/115002.

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27

Kim, Y., C. Park, H. Kim, and S. Hong. "CMOS RF power amplifier with reconfigurable transformer." Electronics Letters 42, no. 7 (2006): 405. http://dx.doi.org/10.1049/el:20060237.

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28

Landin, Per N., Kurt Barbé, Wendy Van Moer, Magnus Isaksson, and Peter Händel. "Two novel memory polynomial models for modeling of RF power amplifiers." International Journal of Microwave and Wireless Technologies 7, no. 1 (2014): 19–29. http://dx.doi.org/10.1017/s1759078714000397.

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Two novel memory polynomial models are derived based on physical knowledge of a general power amplifier (PA). The derivations are given in detail to facilitate derivations of other model structures. The model error in terms of normalized mean square error (NMSE) and adjacent channel error power ratio (ACEPR) of the novel model structures are compared to that of established models based on the number of parameters using data measured on two different amplifiers, one high-power base-station PA and one low-power general purpose amplifier. The novel models show both lower NMSE and ACEPR for any ch

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29

Mabrok, Mussa, Zahriladha Zakaria, and Nasrullah Saifullah. "Design of Wide-band Power Amplifier based on Power Combiner Technique with Low Intermodulation Distortion." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 5 (2018): 3504. http://dx.doi.org/10.11591/ijece.v8i5.pp3504-3511.

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RF power amplifiers are one of challenging blocks in designing radio frequency transceivers, this is due to non-linearity behavior of power amplifiers that leads to inter-modulation distortion. This paper presents the design of wide-band power amplifier which combined with parallel coupled line band pass filter at the input and output of power amplifier to allow the only required frequency band to pass through the power amplifier. Class-A topology and ATF-511P8 transistor are used in this design. Advanced Design System software used as a simulation tool to simulate the designed wide-band power

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30

Joshi, Aniket P., Dr S. P. Mahajan Dr. S. P. Mahajan, and Dr B. C. Joshi Dr. B. C. Joshi. "Design and development of Low Noise Amplifier for RF/MW Receiver." International Journal of Scientific Research 2, no. 6 (2012): 224–27. http://dx.doi.org/10.15373/22778179/june2013/71.

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31

Dassi, Minaxi, and Rajnish Sharma. "Design of RF Low Noise Amplifier at 2GHz in 0.18µm Technology." Journal on Today's Ideas - Tomorrow's Technologies 2, no. 2 (2014): 107–15. http://dx.doi.org/10.15415/jotitt.2014.22008.

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32

McCune, Earl. "A Technical Foundation for RF CMOS Power Amplifiers: Part 2: Power Amplifier Architectures." IEEE Solid-State Circuits Magazine 7, no. 4 (2015): 75–82. http://dx.doi.org/10.1109/mssc.2015.2474236.

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33

Nam, Hyosung, Taejoo Sim, and Junghyun Kim. "A 2.4 GHz 20 W 8-channel RF Source Module with Solid-State Power Amplifiers for Plasma Generators." Electronics 9, no. 9 (2020): 1378. http://dx.doi.org/10.3390/electronics9091378.

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This paper presents a novel multi-channel type RF source module with solid-state power amplifiers for plasma generators. The proposed module is consisted of a DC control part, RF source generation part, and power amplification part. A 2-stage power amplifier (PA) is combined with a gallium arsenide hetero bipolar transistor (GaAs HBT) as a drive PA and a gallium nitride high electron mobility transistor (GaN HEMT) as a main PA, respectively. By employing 8 channels, the proposed module secures better area coverage on the wafer during semiconductor processes such as chemical vapor deposition (C

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34

Silveira, Daniel D., Thiago V. N. Coelho, and Alexandre Bessa dos Santos. "Evolution of Black-Box Models Based on Volterra Series." Journal of Applied Mathematics 2015 (2015): 1–8. http://dx.doi.org/10.1155/2015/638978.

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This paper presents a historical review of the many behavioral models actually used to model radio frequency power amplifiers and a new classification of these behavioral models. It also discusses the evolution of these models, from a single polynomial to multirate Volterra models, presenting equations and estimation methods. New trends in RF power amplifier behavioral modeling are suggested.

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35

Tarasov, Michael, George Prokopenko, Victor Belitsky, and Ludmila Filippenko. "Multiloop integrated dc SQUID low noise RF amplifier." Cryogenics 32 (January 1992): 505–8. http://dx.doi.org/10.1016/0011-2275(92)90216-w.

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36

Yoon, Youngchang, Hyoungsoo Kim, Chang-Ho Lee, and J. Stevenson Kenney. "An inductive antenna mismatch recoverable RF power amplifier." Analog Integrated Circuits and Signal Processing 77, no. 3 (2013): 495–502. http://dx.doi.org/10.1007/s10470-013-0160-5.

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37

Faulkner, M. "Amplifier linearization using RF feedback and feedforward techniques." IEEE Transactions on Vehicular Technology 47, no. 1 (1998): 209–15. http://dx.doi.org/10.1109/25.661047.

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38

Zito, Dome, and Alessandro Fonte. "Dual-Input Pseudo-Switch RF Low Noise Amplifier." IEEE Transactions on Circuits and Systems II: Express Briefs 57, no. 9 (2010): 661–65. http://dx.doi.org/10.1109/tcsii.2010.2058491.

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39

Kheirkhahi, Alireza, Payam Naghshtabrizi, and Lawrence E. Larson. "Stability Analysis of RF Power Amplifier Envelope Feedback." IEEE Transactions on Circuits and Systems II: Express Briefs 58, no. 12 (2011): 852–56. http://dx.doi.org/10.1109/tcsii.2011.2172711.

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40

Singh, Gagan Deep, and Nagarjuna Nallam. "An RF Choke-Less Class E Power Amplifier." IEEE Transactions on Circuits and Systems II: Express Briefs 67, no. 11 (2020): 2422–26. http://dx.doi.org/10.1109/tcsii.2020.2966552.

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41

Magesacher, Thomas, Peter Singerl, and Martin Mataln. "Optimal Segmentation for Piecewise RF Power Amplifier Models." IEEE Microwave and Wireless Components Letters 26, no. 11 (2016): 909–11. http://dx.doi.org/10.1109/lmwc.2016.2614974.

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42

Kang, Seunghoon, Eun-Taek Sung, and Songcheol Hong. "Dynamic Feedback Linearizer of RF CMOS Power Amplifier." IEEE Microwave and Wireless Components Letters 28, no. 10 (2018): 915–17. http://dx.doi.org/10.1109/lmwc.2018.2861881.

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43

Prokopenko, G. V., S. V. Shitov, I. V. Borisenko, and J. Mygind. "HTS dc SQUID based rf amplifier: development concept." Physica C: Superconductivity 368, no. 1-4 (2002): 153–56. http://dx.doi.org/10.1016/s0921-4534(01)01157-1.

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44

Manai, Manel, Hanen Chenini, Afef Harguem, Noureddine Boulejfen, and Fadhel M. Ghannouchi. "Robust digital predistorter for RF power amplifier linearisation." IET Microwaves, Antennas & Propagation 14, no. 7 (2020): 649–55. http://dx.doi.org/10.1049/iet-map.2018.5680.

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45

Chani-Cahuana, Jessica, Per Niklas Landin, Christian Fager, and Thomas Eriksson. "Iterative Learning Control for RF Power Amplifier Linearization." IEEE Transactions on Microwave Theory and Techniques 64, no. 9 (2016): 2778–89. http://dx.doi.org/10.1109/tmtt.2016.2588483.

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46

Jang, Haedong, Richard Wilson, Tim Canning, et al. "RF-Input Self-Outphasing Doherty–Chireix Combined Amplifier." IEEE Transactions on Microwave Theory and Techniques 64, no. 12 (2016): 4518–34. http://dx.doi.org/10.1109/tmtt.2016.2618922.

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47

Chu, James. "RF Power Amplifier Behavioral Modeling [Book\/Software Reviews]." IEEE Microwave Magazine 16, no. 9 (2015): 80–82. http://dx.doi.org/10.1109/mmm.2015.2453876.

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48

Bondarenko, T. V., S. Y. Ilynski, S. A. Polikhov, and G. B. Sharkov. "Power combining scheme of solid-state RF amplifier." Journal of Physics: Conference Series 1238 (June 2019): 012075. http://dx.doi.org/10.1088/1742-6596/1238/1/012075.

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49

Eskelinen, P., and A. Salpala. "A hybrid amplifier as an RF building block." IEEE Aerospace and Electronic Systems Magazine 11, no. 8 (1996): 34–36. http://dx.doi.org/10.1109/62.533754.

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50

Liu, R., W. De Raedt, F. Vanaverbeke, D. Schreurs, and R. Mertens. "RF-MEMS based tri-band GaN power amplifier." Electronics Letters 47, no. 13 (2011): 762–63. http://dx.doi.org/10.1049/el.2011.1627.

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