Relevant bibliographies by topics / RF Integrated Circuits

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'RF Integrated Circuits'

Author: Grafiati
Published: 4 June 2021
Last updated: 7 February 2022

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Journal articles on the topic "RF Integrated Circuits"

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Kim, Bruce, Sukeshwar Kannan, Anurag Gupta, and Naga Sai Evana. "Modeling and Simulation of 3D MEMS Integrated RF Circuits." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, DPC (2012): 002006–27. http://dx.doi.org/10.4071/2012dpc-wp35.

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Today's integrated packaging consists of analog, mixed-signal and RF circuits. These integrated packages are now available in 3-D which makes it extremely difficult to test for defects and their circuit functionalities. This paper provides 3D MEMS integrated packaging which provides self testing and calibrations to overcome process defects and out of spec circuits inside the package making the package self heal itself in case of faults and defects. We have worked on TSV based 3D packaging with MEMS switches to perform self calibrations. We developed a novel multi-tone dither test technique where the test stimulus is generated by modulating the RF carrier signal with a multi-tone signal generated on an Arbitrary Waveform Generator (AWG) with additive white Gaussian noise. We used arrays of MEMS switches to perform self testing. We have considered a low noise amplifier as the reference RF circuit which operates between 4 GHz and 6 GHz. The entire validation of the design using test technique and self-calibration of the RF circuit is automated using the calibration algorithm. The paper presents defects in TSV due to mechanical stress and thermal changes.
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Razavi, B. "Recent advances in RF integrated circuits." IEEE Communications Magazine 35, no. 12 (1997): 36–43. http://dx.doi.org/10.1109/35.642832.

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Lahbib, Imene, Mohamed Aziz Doukkali, Philippe Descamps, Patrice Gamand, Christophe Kelma, and Olivier Tesson. "Design and characterization of an integrated microwave generator for BIST applications." International Journal of Microwave and Wireless Technologies 6, no. 2 (2014): 195–200. http://dx.doi.org/10.1017/s1759078714000105.

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This paper presents a circuit architecture for a new integrated on chip test method for microwave circuits. The proposed built-in-self-test (BIST) cell targets a direct low-cost measurement technique of the gain and the 1 dB input compression point (CP1) of a K-band satellite receiver in the 18–22 GHz frequency bandwidth. A signal generator at the radiofrequency (RF) front end input of the device under test (DUT) has been integrated on the same chip. To inject this RF signal, a loopback technique has been used and the design has been accommodated for it. This paper focuses on the design of the most sensitive block of the BIST circuit, i.e. the RF signal generator. This circuit, fabricated in a SIGe:C BiCMOS process, consumes 10 mA. It presents a dynamic power range of 17 dB (−41; −24 dBm) and operates in a frequency range of 5.6 GHz (17.5; 23 GHz). This BIST circuit gives new perspectives in terms of test strategy, cost reduction, and measurement accuracy for microwave-integrated circuits and could be adapted for mm-wave circuits.
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Liu, A. Q., A. B. Yu, M. F. Karim, and M. Tang. "RF MEMS Switches and Integrated Switching Circuits." JSTS:Journal of Semiconductor Technology and Science 7, no. 3 (2007): 166–76. http://dx.doi.org/10.5573/jsts.2007.7.3.166.

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Brown, E. R. "RF-MEMS switches for reconfigurable integrated circuits." IEEE Transactions on Microwave Theory and Techniques 46, no. 11 (1998): 1868–80. http://dx.doi.org/10.1109/22.734501.

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Kazior, Thomas E. "Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, no. 2012 (2014): 20130105. http://dx.doi.org/10.1098/rsta.2013.0105.

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Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III–V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III–V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III–V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications.
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Wang, A. Z. H., B. Zhao, J. A. Hutchby, M. Ostling, and S. C. Sun. "Foreword Special Issue on Integrated Circuits Technologies for RF Circuit Applications." IEEE Transactions on Electron Devices 52, no. 7 (2005): 1231–34. http://dx.doi.org/10.1109/ted.2005.852099.

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Chen, Ethan, and Vanessa Chen. "Statistical RF/Analog Integrated Circuit Design Using Combinatorial Randomness for Hardware Security Applications." Mathematics 8, no. 5 (2020): 829. http://dx.doi.org/10.3390/math8050829.

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While integrated circuit technologies keep scaling aggressively, analog, mixed-signal, and radio-frequency (RF) circuits encounter challenges by creating robust designs in advanced complementary metal–oxide–semiconductor (CMOS) processes with the diminishing voltage headroom. The increasing random mismatch of smaller feature sizes in leading-edge technology nodes severely limit the benefits of scaling for (RF)/analog circuits. This paper describes the details of the combinatorial randomness by statistically selecting device elements that relies on the significant growth in subsets number of combinations. The randomness can be utilized to provide post-manufacturing reconfiguration of the selectable circuit elements to achieve required specifications for ultra-low-power systems. The calibration methodology is demonstrated with an ultra-low-voltage chaos-based true random number generator (TRNG) for energy-constrained Internet of things (IoT) devices in the secure communications.
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Temnov, A. M. "Hybrid Monolithic Microwave Integrated Circuits RF on Diamond." Nano- i Mikrosistemnaya Tehnika 22, no. 6 (2020): 298–328. http://dx.doi.org/10.17587/nmst.22.298-328.

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Acar, Erka, and Sule Ozev. "Low Cost MIMO Testing for RF Integrated Circuits." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 18, no. 9 (2010): 1348–56. http://dx.doi.org/10.1109/tvlsi.2009.2024018.

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Dissertations / Theses on the topic "RF Integrated Circuits"

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Woo, Sang Hyun. "Low noise RF CMOS receiver integrated circuits." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/50127.

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The objective of this research is to design and implement low-noise wideband RFIC components with CMOS technology for the direct-conversion architecture. This research proposes noise reduction techniques to improve the thermal noise and flicker noise contribution of a low noise amplifier (LNA) and a mixer. Of these techniques, the LNA is found to reduce noise, boost gain, and consume a relatively low amount of power without sacrificing the wideband and linearity advantages of a conventional common gate (CG) topology. The research concludes by investigating the proposed mixer topology, which senses and compensates local oscillator (LO) phase mismatches, the dominant cause of flicker noise.
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Whyman, Neil L. "Modelling RF interference effects in integrated circuits." Thesis, University of York, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.273884.

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Staiculescu, Daniela. "Design rules for RF and microwave flip-chip." Diss., Georgia Institute of Technology, 2001. http://hdl.handle.net/1853/13265.

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Marks, Jeffery. "SOI for Frequency Synthesis in RF Integrated Circuits." NCSU, 2003. http://www.lib.ncsu.edu/theses/available/etd-03062003-034010/.

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MARKS, JEFFERY EARL. SOI for Frequency Synthesis in RF Integrated Circuits. (Under the direction of Dr. Wentai Liu.) <p> The purpose of this research has been to explore the use of the Honeywell silicon on insulator fabrication process for use in a frequency synthesizer. The research includes the fabrication of a frequency synthesizer and ring oscillators which are used to evaluate the fabrication process. Experimental results are compared to the theoretical results, providing some insight into circuit design with the silicon on insulator process. Recommendations are presented to enhance the frequency stability of such circuits. A novel method for reducing phase noise in ring oscillators through manipulation of the floating body is also presented. </p>
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Bhattacharya, Sambuddha. "Template-driven parasitic-aware optimization of analog/RF IC layouts /." Thesis, Connect to this title online; UW restricted, 2005. http://hdl.handle.net/1773/6121.

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Voorakaranam, Ramakrishna. "Signature based testing of analog and RF circuits." Diss., Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/15009.

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Jangkrajarng, Nuttorn. "Analog/RF VLSI layout generation : layout retargeting via symbolic template /." Thesis, Connect to this title online; UW restricted, 2006. http://hdl.handle.net/1773/6084.

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Hamanaka, Cristian Otsuka. "Projeto de circuitos para geração de tensão de referência em sistemas receptores/transmissores RF." Universidade de São Paulo, 2007. http://www.teses.usp.br/teses/disponiveis/3/3140/tde-09012008-164614/.

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Este trabalho consiste no projeto de uma Fonte de Tensão de Referência CMOS com coeficiente de temperatura inferior a 50 ppm/ºC. Esta fonte deve ser aplicada em receptores/transmissores de radio freqüência mas pode também ser utilizada em qualquer sistema analógico. A tecnologia utilizada foi a CMOS 0,35 µm da AMS (Austria Micro Systems) com quatro níveis de metal e dois de silício policristalino. A fonte de tensão implementada é do tipo Bandgap e utiliza dispositivos MOS em inversão fraca, um transistor bipolar parasitário e resistores de silício policristalino de alta resistividade. No circuito é produzida uma tensão PTAT (Proportional to Absolute Temperature) que somada a tensão base-emissor do transistor bipolar resulta numa tensão de saída independente da temperatura. O projeto e o desenho do layout desta fonte foram realizados. A partir do layout foram gerados netlists para simulações realizadas utilizando o software ELDO com o modelo MOS BSIM3v3, nas condições de operação típicas, worst speed e worst power. Através destas simulações verificou-se que o circuito atendia as especificações iniciais. O valor da tensão de saída, no entanto, apesar de estar próximo do valor desejado de 1,25 V, variou com as condições de simulação empregadas. Dois circuitos Bandgap diferentes foram enviados para fabricação: um circuito com resistores integrados (dimensões de 220 µm x 76 µm) e outro sem os resistores (dimensões de 190 µm x 36 µm). Este último permite, com o ajuste do valor dos resistores colocados externamente, modificar, se necessário, as condições de operação do circuito. Os circuitos foram caracterizados obtendo-se para o circuito com resistores integrados um coeficiente de temperatura inferior à 40 ppm/ºC, taxa de variação da saída com a tensão de alimentação próxima de 19 mV/V. O valor da tensão de saída a 50 ºC esteve entre 1,1835 V e 1,2559 V (1,25 V ± 67 mV). Para o circuito sem os resistores integrados, obteve-se um coeficiente de temperatura que chegou à 90 ppm/ºC, taxa de variação da saída com a tensão de alimentação inferior à 28 mV/V. O valor da tensão de saída a 50 ºC esteve entre 1,247 V e 1,2588 V (1,25 V ± 9 mV). A faixa de temperatura utilizada para as medidas foi de -30 ºC a 100 ºC. O consumo de corrente dos circuitos é de aproximadamente 14 µA e seu funcionamento é garantido para tensões de alimentação tão baixas quanto 1,8 V.<br>This work consists in the design of a CMOS Voltage Reference Source with a temperature coefficient inferior to 50 ppm/ºC. This voltage source should be applied in radio frequency receptor/transmitter but can be also applied in any analog system. The technology employed in the design is the CMOS 0.35 µm from the AMS (Austria Micro Systems) with four metal levels and two poly-silicon levels. The implemented voltage source is of the Bandgap type and uses MOS devices in weak inversion, a parasitic bipolar transistor, and resistors made with high resistive poly-silicon. The circuit produces a PTAT (Proportional to Absolute Temperature) voltage that is added to the bipolar transistor base-emitter voltage to build an output voltage independent of temperature. The project and the drawing of the layout of the circuit had been carried out. The netlists of the circuit were generated from the layout and they were employed in simulations done with the software ELDO and the BSIM3v3 MOS model, in typical, worst speed, and worst power conditions. Through these simulations it was verified that the circuit reached the initial specifications. The value of the output voltage, however, although being next to the desired value of 1.25 V, varied with the employed simulation conditions. Two different Bandgap circuits had been sent to the foundry: a circuit with integrated resistors (dimensions of 220 µm x 76 µm) and another one without the resistors (dimensions of 190 µm x 36 µm). This last one allows, with the adjustment of external resistor values, modifying, if necessary, the operation conditions of the circuit. The circuits had been characterized and the circuit with integrated resistors has a temperature coefficient inferior to 40 ppm/ºC, an output variation rate with the power supply close to 19 mV/V. The output voltage value at 50 ºC is between 1.1835 V and 1.2559 V (1.25 V ± 67 mV). The circuit without the resistors has a temperature coefficient as high as 90 ppm/ºC, an output variation rate with the power supply inferior to 28 mV/V. The output voltage value at 50 ºC is between 1.247 V and 1.2588 V (1.25 V ± 9 mV). The temperature range used in the measurements was from -30 ºC to 100 ºC. The current consumption of the circuits is approximately of 14 µA, and they operate with power supply voltages as low as 1.8 V.
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Huo, Xiao. "High performance passive components modeling and integration in RF/microwave systems /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20HUO.

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Gopalan, Anand. "Built-in-self-test of RF front-end circuitry /." Link to online version, 2005. https://ritdml.rit.edu/dspace/handle/1850/942.

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Books on the topic "RF Integrated Circuits"

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Passive RF & microwave integrated circuits. Newnes, 2003.

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service), SpringerLink (Online, ed. RF MEMS Switches and Integrated Switching Circuits. Springer Science+Business Media, LLC, 2010.

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Liu, Ai-Qun. RF MEMS Switches and Integrated Switching Circuits. Springer US, 2010. http://dx.doi.org/10.1007/978-0-387-46262-2.

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Ding, Yongwang. High-linearity CMOS RF front-end circuits. Springer, 2004.

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1959-, Harjani Ramesh, ed. High-linearity CMOS RF front-end circuits. Springer, 2005.

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Voldman, Steven H. ESD: RF technology and circuits. John Wiley & Sons, 2005.

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Razavi, Behzad. RF microelectronics. 2nd ed. Prentice Hall, 2012.

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Bahl, Inder. Lumped elements for RF and microwave circuits. Artech House, Inc, 2003.

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Anh, Do Manh, and Boon Chirn Chye, eds. Design of CMOS RF integrated circuits and systems. World Scientific, 2010.

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RF microelectronics. Prentice Hall, 1998.

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Book chapters on the topic "RF Integrated Circuits"

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Papananos, Yannis E. "Integrated RF Filters." In Radio-Frequency Microelectronic Circuits for Telecommunication Applications. Springer US, 1999. http://dx.doi.org/10.1007/978-1-4757-3017-3_8.

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Leblebici, Duran, and Yusuf Leblebici. "Frequency-Selective RF Circuits." In Fundamentals of High Frequency CMOS Analog Integrated Circuits. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-63658-6_4.

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Dubus, Bertrand. "Future Trends in Acoustic RF MEMS Devices." In Integrated Circuits and Systems. Springer US, 2012. http://dx.doi.org/10.1007/978-1-4419-8798-3_4.

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Leblebici, Duran, and Yusuf Leblebici. "RF Oscillators." In Fundamentals of High Frequency CMOS Analog Integrated Circuits. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-63658-6_6.

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Cathelin, Andreia. "Body-Biasing in FD-SOI for Analog, RF, and Millimeter-Wave Designs." In Integrated Circuits and Systems. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-39496-7_4.

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Passos, Fábio, Elisenda Roca, Rafael Castro-López, and Francisco V. Fernández. "RF Receiver Architectures." In Automated Hierarchical Synthesis of Radio-Frequency Integrated Circuits and Systems. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-47247-4_2.

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Liu, Ai Qun. "Single-Pole-Multi-Throw Switching Circuits." In RF MEMS Switches and Integrated Switching Circuits. Springer US, 2010. http://dx.doi.org/10.1007/978-0-387-46262-2_5.

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Kim, Chun-Sup, Gea-Ok Cho, Yong-Hwan Kim, and Bang-Sup Song. "RF AMP IC for Optical Disc Player." In Mixed Design of Integrated Circuits and Systems. Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5651-0_3.

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Jin, Yier, Dzmitry Maliuk, and Yiorgos Makris. "Hardware Trojan Detection in Analog/RF Integrated Circuits." In Secure System Design and Trustable Computing. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-14971-4_7.

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Liu, Ai Qun. "Introduction." In RF MEMS Switches and Integrated Switching Circuits. Springer US, 2010. http://dx.doi.org/10.1007/978-0-387-46262-2_1.

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Conference papers on the topic "RF Integrated Circuits"

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"Session IC: RF integrated circuits." In 2010 International Semiconductor Conference (CAS 2010). IEEE, 2010. http://dx.doi.org/10.1109/smicnd.2010.5650569.

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"B2L-C RF Integrated Circuits." In 2008 15th IEEE International Conference on Electronics, Circuits and Systems. IEEE, 2008. http://dx.doi.org/10.1109/icecs.2008.4675161.

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Abidi, A. A., and H. Darabi. "Low power RF integrated circuits." In the 1999 international symposium. ACM Press, 1999. http://dx.doi.org/10.1145/313817.313824.

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Kundert. "Simulation methods for RF integrated circuits." In Proceedings of IEEE International Conference on Computer Aided Design (ICCAD). IEEE, 1997. http://dx.doi.org/10.1109/iccad.1997.643622.

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Lu, Yin-lung, Yung-huei Lee, William McMahon, and Tze-ching Fung. "Robust Inductor Design for RF Circuits." In IEEE Custom Integrated Circuits Conference 2006. IEEE, 2006. http://dx.doi.org/10.1109/cicc.2006.320993.

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Henkel, Frank, and Domine Leenaerts. "Session: RMO3B: RF LNAs and RF rectifiers." In 2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). IEEE, 2013. http://dx.doi.org/10.1109/rfic.2013.6569552.

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Nguyen, Clark. "Integrated Micromechanical Circuits for RF Front Ends." In 2006 European Solid-State Device Research Conference. IEEE, 2006. http://dx.doi.org/10.1109/essder.2006.307630.

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Nguyen, Clark. "Integrated Micromechanical Circuits for RF Front Ends." In 2006 Proceedings of the 32nd European Solid-State Circuits Conference. IEEE, 2006. http://dx.doi.org/10.1109/esscir.2006.307523.

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Bock, Georg. "RF-CMOS Integrated Circuits for Wireless Communications." In 2006 International Conference on Microwaves, Radar & Wireless Communications. IEEE, 2006. http://dx.doi.org/10.1109/mikon.2006.4345405.

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Tao, Zhou. "Balun Design for Silicon RF Integrated Circuits." In 2007 IEEE International Conference on Integration Technology. IEEE, 2007. http://dx.doi.org/10.1109/icitechnology.2007.4290472.

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Reports on the topic "RF Integrated Circuits"

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Christodoulou, Christos. (DCT) A Reconfigurable RF Photonics Unit Cell For Integrated Circuits. Defense Technical Information Center, 2012. http://dx.doi.org/10.21236/ada578997.

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Penn, John. Optimized (2nd Pass) Gallium Arsenide (GaAs) Integrated Circuit Radio Frequency (RF) Booster Designs for 425 MHz and Dual Band (425 and 900 MHz). Defense Technical Information Center, 2010. http://dx.doi.org/10.21236/ada532987.

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Penn, John E. System Tests of Optimized (2nd Pass) Gallium Arsenide (GaAs) Integrated Circuit Radio Frequency (RF) Booster Designs for 425 MHz and Dual Band (425 and 900 MHz). Defense Technical Information Center, 2011. http://dx.doi.org/10.21236/ada551775.

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