Journal articles: 'RF power transistor'

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Sleptsova, Anastasia A., Sergey V. Chernykh, Dmitry A. Podgorny, and Ilya A. Zhilnikov. "Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD." Modern Electronic Materials 6, no. 2 (July 15, 2020): 71–75. http://dx.doi.org/10.3897/j.moem.6.2.58860.

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We have studied the effect of silicon nitride (SiN) dielectric passivating film deposition by inductively coupled plasma chemical vapor deposition (ICP CVD) on the parameters of AlGaN/GaN heterostructure high electron mobility transistors (HEMT). Study of the parameters of the dielectric layers has allowed us to determine the effect of RF and ICP power and working gas flow ratio on film growth rate and structural perfection, and on the current vs voltage curves of the passivated HEMT. The deposition rate changes but slightly with an increase in RF power but increases with an increase in ICP power. Transistor slope declines considerably with an increase in RF power: it is the greatest at minimum power RF = 1 W. In the beginning of growth even at a low RF power (3 W) the transistor structure becomes completely inoperable. Dielectric deposition for HEMT passivation should be started at minimum RF power. We have developed an AlGaN/GaN microwave HEMT passivation process providing for conformal films and low closed transistor drain–source currents without compromise in open state transistor performance: within 15 and 100 mA, respectively, for a 1.25 and 5 mm common T-gate (Ug = –8 V and Ud-s = 50 V).

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Timoshenkov, V. P., A. I. Khlybov, D. V. Rodionov, and A. I. Panteleev. "Research of Influence of Power RF GaN Transistor Constructions on it's Thermal Mode." Nano- i Mikrosistemnaya Tehnika 22, no. 8 (October 23, 2020): 415–21. http://dx.doi.org/10.17587/nmst.22.415-421.

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This paper shows influence of power RF GaN transistors construction on it's thermal mode. Field GaN transistor (with field plate) was researched. The influence of field-plate on transistor thermal mode was analysed and compared to other constructions.

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Khlybov, A. I., D. V. Rodionov, A. I. Panteleev, P. V. Timoshenkov, and N. V. Guminov. "Simulation of Power RF GaN Transistors Thermal Parameters in Pulse Mode." Nano- i Mikrosistemnaya Tehnika 23, no. 4 (August 20, 2021): 179–85. http://dx.doi.org/10.17587/nmst.23.179-185.

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This paper contains research results of thermal process in power GaN RF transistor in silicon substrate for pulse mode. Thermal mode research was done using computer simulation. Authors developed methodic allows significant decrease computational complexity. The dependences of maximum transistor channel temperature and thermal resistance as function of pulse width (with constant duty cycle) were done. Thermal simulation was done for power GaN RF transistor with overall gate width 2.1 mm.

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Morad, E., S. Z. Moussavi, M. Alasvandi, and E. Rasouli. "A Low Voltage, Low Power and Highly Linear CMOS Down-Conversion Gilbert Cell Mixer Using MGTR Method." Journal of Circuits, Systems and Computers 24, no. 07 (June 17, 2015): 1550098. http://dx.doi.org/10.1142/s021812661550098x.

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A radio frequency (RF) low voltage and low power down conversion mixer with high linearity using TSMC 0.18-μm technology is presented which operates in 2.4 GHz Industrial Scientific and Medical (ISM) band. The local oscillator (LO) frequency is 2.1 GHz with an input power of 5 dBm, whereas IF frequency is 300 MHz. Multiple gated transistors (MGTRs) method is used to increase the linearity of Gilbert cell mixer. In this method an auxiliary transistor is used parallel to the transconductance stage transistor. This increases linearity by decreasing of transconductance stage transistor. The simulation results show an IIP3 improvement of 16.55 dBm. The proposed low power and highly linear mixer consumes a power of 4.46 mW from 1.8 V a supply voltage. The noise figure (NF) and gain conversion are about 13.8 dB and 9.11 dB, respectively.

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Moraes Junior, Tarcisio Oliveira, Raimundo Carlos Silvério Freire, and Cleonilson Protásio de Souza. "A High-Efficiency CMOS Rectifier for RF Using Bulk Biasing Control Circuit." Journal of Integrated Circuits and Systems 13, no. 2 (October 4, 2018): 1–6. http://dx.doi.org/10.29292/jics.v13i2.35.

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In MOSFET-transistor based rectifier circuits, leakage currents occur through both source-bulk and drain-bulk connections of their transistors causing some power dissipation decreasing their efficiency. Such a scenario is more worrying in ultra-low power circuits as those used in energy harvesting. As a solution, in this work it is proposed a control circuit of transistor bulk biasing that switches the bulk bias in an efficient way assuring adequate inversion of the source-bulk and drain-bulk junctions. The rectifier based on the proposed bulk biasing control circuit shows to be a high-efficiency one capable of reducing the leakage currents. To obtain experimental results, the circuit was fabricated in a 130 nm CMOS process and tested on a micromanipulator. The results were compared with other works where it is observed that the efficiency of our proposal reaches up to 72.5% or 5% higher that the best previous one.

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Konstantinov, Andrey O., Chris I. Harris, and I. C. Ray. "High Power Lateral Epitaxy MESFET Technology in Silicon Carbide." Materials Science Forum 483-485 (May 2005): 853–56. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.853.

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High impedance silicon carbide power RF transistors are reported, which use the technology of Lateral Epitaxy Metal-Semiconductor FET (LEMES). The LEMES transistor utilizes a heavily doped buried depletion stopper to increase output impedance and breakdown voltage and to eliminate undesirable hot-carrier trapping effects. A power density of 2-3 W/mm at 2 GHz is routinely achieved resulting in a total output power of 10W for packaged components. The value of input and output impedance is around 50 Ohms for a frequency of around 2 GHz.

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Cheng, Yu Jie, Jian Hua Xu, and Hai Feng Cheng. "Research on VRM in RF PA System Based on Enhancement Mode GaN HEMT." Materials Science Forum 1014 (November 2020): 149–56. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.149.

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As a key part of the RF PA system, VRM (Voltage-Regulate-Modulator), whose main role is to offer pulse voltage for RF power transistor, is often slighted. As a result, VRM has been a restraining factor now. In order to realize the needs of high speed and high frequency, a new method based on enhancement mode GaN HEMT of designing VRM is proposed in this paper. By using this method, the rise time and fall time of VRM could be as about 10ns with the peak voltage 75V and the peak current 150A, which is quite suitable for driving high voltage and high power GaN-based RF power transistor.

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RAJAN, SIDDHARTH, UMESH K. MISHRA, and TOMÁS PALACIOS. "AlGaN/GaN HEMTs: RECENT DEVELOPMENTS AND FUTURE DIRECTIONS." International Journal of High Speed Electronics and Systems 18, no. 04 (December 2008): 913–22. http://dx.doi.org/10.1142/s0129156408005874.

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This paper provides an overview of recent work and future directions in Gallium Nitride transistor research. We discuss the present status of Ga -polar AlGaN / GaN HEMTs and the innovations that have led to record RF power performance. We describe the development of N -polar AlGaN / GaN HEMTs with microwave power performance comparable with state-of-art Ga -polar AlGaN / GaN HEMTs. Finally we will discuss how GaN -based field effect transistors could be promising for a less obvious application: low-power high-speed digital circuits.

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Jardel, Olivier, Jean-Claude Jacquet, Lény Baczkowski, Dominique Carisetti, Didier Lancereau, Maxime Olivier, Raphaël Aubry, et al. "InAlN/GaN HEMTs based L-band high-power packaged amplifiers." International Journal of Microwave and Wireless Technologies 6, no. 6 (February 25, 2014): 565–72. http://dx.doi.org/10.1017/s175907871400004x.

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This paper presents power results of L-band packaged hybrid amplifiers using InAlN/GaN/SiC HEMT power dies. The high-power densities achieved both in pulsed and continuous wave (cw) modes confirm the interest of such technology for high-frequency, high-power, and high-temperature operation. We present here record RF power measurements for different versions of amplifiers. Up to 260 W, i.e. 3.6 W/mm, in pulsed (10 µs/10%) conditions, and 105 W, i.e. 2.9 W/mm, in cw conditions were achieved. Such results are made possible thanks to the impressive performances of InAlN/GaN transistors, even when operating at high temperatures. Unit cell transistors deliver output powers of 4.3 W/mm at Vds = 40 V in the cw mode of operation at the frequency of 2 GHz. The transistor process is described here, as well as the amplifiers design and measurements, with a particular focus to the thermal management aspects.

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Drillet, Frédéric, Jérôme Loraine, Hassan Saleh, Imene Lahbib, Brice Grandchamp, Lucas Iogna-Prat, Insaf Lahbib, Ousmane Sow, Albert Kumar, and Gregory U'Ren. "RF Small and large signal characterization of a 3D integrated GaN/RF-SOI SPST switch." International Journal of Microwave and Wireless Technologies 13, no. 6 (February 24, 2021): 517–22. http://dx.doi.org/10.1017/s1759078721000076.

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AbstractThis paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration technique. The RF switch transistors are GaN-based and the substrate is RF-SOI. The insertion loss obtained is below 0.4 dB up to 30 GHz while being 1 dB lower than its GaN/Si equivalent. This difference comes from the vertical capacitive coupling reduction of the transistor to the substrate. This reduction is estimated to 59% based on a RC network model fitted to S-parameters measurements. In large signal, the linearity study of the substrate through coplanar waveguide transmission line characterization shows the reduction of the average power level of H2 and H3 of 30 dB up to 38 dBm of input power. The large signal characterization of the SPST shows no compression up to 38 dBm and the H2 and H3 rejection levels at 38 dBm are respectively, 68 and 75 dBc.

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Lee, Changhyun, and Changkun Park. "Design methodology for a switching-mode RF CMOS power amplifier with an output transformer." International Journal of Microwave and Wireless Technologies 8, no. 3 (September 24, 2015): 471–77. http://dx.doi.org/10.1017/s1759078715001415.

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In this study, we propose a design methodology for a switching-mode RF CMOS power amplifier with an output transformer. For a given supply voltage, output power, and target efficiency, the initial values of the transistor size, output inductance, and capacitance can be sequentially determined during the design of the power amplifier. The breakdown voltage of the power transistor is considered in the design methodology. To prove the feasibility of the proposed design methodology, we provide the design example of a 2.4-GHz switching-mode CMOS power amplifier with 180-nm RF CMOS technology. From the measured results, the feasibility of the proposed design methodology is proved.

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Nam, Hyosung, Taewan Kim, Taejoo Sim, Sooji Bae, and Junghyun Kim. "A 2.4 GHz 20 W 8-Channel RF Source Module with Improved Channel Output Balance." Applied Sciences 11, no. 16 (August 15, 2021): 7491. http://dx.doi.org/10.3390/app11167491.

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This paper presents a 2.4 GHz 20 W 8-channel radio frequency (RF) source module with improved channel output balance. The proposed RF source module is composed of an RF source generation/DC control part, a power amplification part, and a power dividing part. A 2-stage power amplifier (PA) is combined with gallium nitride high-electron-mobility transistors, including a 25 W transistor and 2-way combined 120 W transistors as the drive and main PA, respectively. In addition, a structure was applied to improve the channel output balance compared to that of the previous module, and the differences of the phase and magnitude of the output power between channels are alleviated within 0.35° and 0.18 dB, respectively. A water jacket was implemented under the drive and main PAs for liquid cooling; however, unlike in the previous work, it was designed by optimizing the size of the water jacket and reducing unnecessary materials using a brazing process. The output power at each channel was 43 dBm, and the drain efficiency was more than 50% at 2.4 GHz. The total module size was 244 mm × 247.4 mm × 30 mm, and its volume was reduced by approximately 58.4% compared to that of the previous module.

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FLANDRE, D., J. P. RASKIN, and D. VANHOENACKER-JANVIER. "SOI CMOS TRANSISTORS FOR RF AND MICROWAVE APPLICATIONS." International Journal of High Speed Electronics and Systems 11, no. 04 (December 2001): 1159–248. http://dx.doi.org/10.1142/s0129156401001076.

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The new communication markets are vey demanding: high frequency, high degree of integration, low power consumption. Silicon-on-Insulator offers many advantages and this paper illustrates the potentialities of this technology for RF and microwave applictions. After an overview of the SOI material, the properties of the SOI MOSFET's are analyzed and compared to bulk Si MOSFET's. The models of transmission lines and inductors on SOI are compared and further used in the on-wafer characterization of the transistors. Various models for the transistors are presented and their limitations are given. A new model is described, valid from DC to the microwave region. This model agrees very well with the measurements for various transistor dimensions. Finally, variuos RF and microware circuits are presented. Ths paper does not fully describe all the properties and applications of SOI but the numerous references offered to the reader help him to gather more informations.

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King, Ming-Chu, Tsu Chang, and Albert Chin. "RF Power Performance of Asymmetric-LDD MOS Transistor for RF-CMOS SOC Design." IEEE Microwave and Wireless Components Letters 17, no. 6 (June 2007): 445–47. http://dx.doi.org/10.1109/lmwc.2007.897796.

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Li, Zhichao, Shiheng Yang, Samuel B. S. Lee, and Kiat Seng Yeo. "A Two-Stage X-Band 20.7-dBm Power Amplifier in 40-nm CMOS Technology." Electronics 9, no. 12 (December 20, 2020): 2198. http://dx.doi.org/10.3390/electronics9122198.

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For higher integration density, X-band power amplifiers (PAs) with CMOS technology have been widely discussed in recent publications. However, with reduced power supply voltage and device size, it is a great challenge to design a compact PA with high output power and power-added efficiency (PAE). In the proposed design, a 40-nm standard CMOS process is used for higher integration with other RF building blocks, compared with other CMOS PA designs with larger process node. Transistor cells are designed with neutralization capacitors to increase stability and gain performance of the PA. As a trade-off among gain, output power, and PAE, the transistor cells in driving stage and power stage are biased for class A and class AB operation, respectively. Both transistor cells consist of two transistors working in differential mode. Furthermore, transformer-based matching networks (TMNs) are used to realize a two-stage X-band CMOS PA with compact size. The PA achieves an effective conductivity (EC) of 117.5, which is among the highest in recently reported X-band PAs in CMOS technology. The PA also attains a saturated output power (Psat) of 20.7 dBm, a peak PAE of 22.4%, and a gain of 25.6 dB at the center frequency of 10 GHz under a 1 V supply in 40-nm CMOS.

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Yan, Shuxia, Xiaoyi Jin, Yaoqian Zhang, Weiguang Shi, and Jia Wen. "Neurospace Mapping Modeling for Packaged Transistors." Mathematical Problems in Engineering 2018 (October 1, 2018): 1–9. http://dx.doi.org/10.1155/2018/4584069.

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This paper presents a novel Neurospace Mapping (Neuro-SM) method for packaged transistor modeling. A new structure consisting of the input package module, the nonlinear module, the output package module, and the S-Matrix calculation module is proposed for the first time. The proposed method can develop the model only using the terminal signals, instead of the internal and physical structure information of the transistors. An advanced training method utilizing the different parameters to adjust the different characteristics of the packaged transistors is developed to make the proposed model match the device data efficiently and accurately. Measured data of radio frequency (RF) power laterally diffused metal-oxide semiconductor (LDMOS) transistor are used to verify the capability of the proposed Neuro-SM method. The results demonstrate that the novel Neuro-SM model is more accurate and efficient than existing device models.

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Figur, Sascha A., Friedbert van Raay, Rüdiger Quay, Larissa Vietzorreck, and Volker Ziegler. "RF-MEMS multi-mode-matching networks for GaN power transistors." International Journal of Microwave and Wireless Technologies 6, no. 5 (April 1, 2014): 447–58. http://dx.doi.org/10.1017/s1759078714000427.

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This work presents radio-frequency-microelectromechanical-system (RF-MEMS)-based tunable input- and output-matching networks for a multi-band gallium nitride (GaN) power-amplifier applications. In the first part, circuit designs are shown and characterized for a fixed operation mode of the transistor, i.e. either a maximum-output-power- or a maximum-power-added-efficiency (PAE)-mode, which are finally combined into a multi-mode-matching network (M3N); the M3N allows to tune the operation mode of the transistor independently of its operational frequency. The matching networks are designed to provide optimum matching for the power amplifier at three to six different operating frequencies for maximum-output-power- and maximum-PAE-mode. In the frequency range from 3.5 to 8.5 GHz, return losses of 10 dB and higher were measured and insertion losses of 0.5–1.9 dB were demonstrated for the output-matching networks. Further characterizations were performed to test the dependency on the RF-input power, and no changes were observed up to power levels of 34 dBm when cold-switched.

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Carrara, F., C. D. Presti, A. Scuderi, and G. Palmisano. "Single-transistor latch-up and large-signal reliability in SOI CMOS RF power transistors." Solid-State Electronics 54, no. 9 (September 2010): 957–64. http://dx.doi.org/10.1016/j.sse.2010.04.036.

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Pham, Thi Thuy, Dongmin Kim, Seo-Hyeong Jeong, Junghyup Lee, and Donggu Im. "A High Efficiency Low Noise RF-to-DC Converter Employing Gm-Boosting Envelope Detector and Offset Canceled Latch Comparator." Electronics 10, no. 9 (May 2, 2021): 1078. http://dx.doi.org/10.3390/electronics10091078.

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This work presents a high efficiency RF-to-DC conversion circuit composed of an LC-CL balun-based Gm-boosting envelope detector, a low noise baseband amplifier, and an offset canceled latch comparator. It was designed to have high sensitivity with low power consumption for wake-up receiver (WuRx) applications. The proposed envelope detector is based on a fully integrated inductively degenerated common-source amplifier with a series gate inductor. The LC-CL balun circuit is merged with the core of the envelope detector by sharing the on-chip gate and source inductors. The proposed technique doubles the transconductance of the input transistor of the envelope detector without any extra power consumption because the gate and source voltage on the input transistor operates in a differential mode. This results in a higher RF-to-DC conversion gain. In order to improve the sensitivity of the wake-up radio, the DC offset of the latch comparator circuit is canceled by controlling the body bias voltage of a pair of differential input transistors through a binary-weighted current source cell. In addition, the hysteresis characteristic is implemented in order to avoid unstable operation by the large noise at the compared signal. The hysteresis window is programmable by changing the channel width of the latch transistor. The low noise baseband amplifier amplifies the output signal of the envelope detector and transfers it into the comparator circuit with low noise. For the 2.4 GHz WuRx, the proposed envelope detector with no external matching components shows the simulated conversion gain of about 16.79 V/V when the input power is around the sensitivity of −60 dBm, and this is 1.7 times higher than that of the conventional envelope detector with the same current and load. The proposed RF-to-DC conversion circuit (WuRx) achieves a sensitivity of about −65.4 dBm based on 45% to 55% duty, dissipating a power of 22 μW from a 1.2 V supply voltage.

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Hou, Danqiong, Griff L. Bilbro, and Robert J. Trew. "Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs." Active and Passive Electronic Components 2012 (2012): 1–11. http://dx.doi.org/10.1155/2012/806253.

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We have developed a new, zone-based compact physics-based AlGaN/GaN heterojunction field-effect transistor (HFET) model suitable for use in commercial harmonic-balance microwave circuit simulators. The new model is programmed in Verilog-A, an industry-standard compact modeling language. The new model permits the dc, small-signal, and large-signal RF performance for the transistor to be determined as a function of the device geometric structure and design features, material composition parameters, and dc and RF operating conditions. The new physics-based HFET model does not require extensive parameter extraction to determine model element values, as commonly employed for traditional equivalent-circuit-based transistor models. The new model has been calibrated and verified. We report very good agreement between simulated and measured dc and RF performance of an experimental C-band microwave power amplifier.

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Ali, Firas M., Mahmuod H. Al-Muifraje, and Thamir R. Saeed. "An Analytic Design Approach to Inverse Class-F RF Power Amplifiers." Engineering and Technology Journal 38, no. 2A (February 25, 2020): 211–25. http://dx.doi.org/10.30684/etj.v38i2a.301.

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The design of high efficiency inverse class-F (class-F-1) radio frequency (RF) power amplifiers includes extensive measurements to characterize the RF power device by means of the empirical load-pull test setup. This paper presents an alternative characterization approach based on evaluating the load impedances analytically at the desired harmonic frequencies for a high electron mobility transistor (HEMT) in terms of the internal and package elements of the active device. It additionally provides a method for extracting the parasitic elements of the power device as well as determining the optimum load-line resistance using the transistor manufacturer’s large signal model. A new topology for the output matching circuit is also proposed with its synthetic procedure to present the appropriate harmonic load impedances. To verify this methodology, a 900 MHz inverse class-F power amplifier circuit was designed and its performance was tested with the aid of the Keysight ADS software. The simulation results showed an output power of 38 dBm, a power gain of about 13 dB, DC-to-RF efficiency greater than 87%, and an acceptable level of linearity for both GSM and CDMA modulated signals.

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Montesinos, Ronald, Corinne Berland, Mazen Abi Hussein, Olivier Venard, and Philippe Descamps. "Analysis of RF power amplifiers in LINC systems." International Journal of Microwave and Wireless Technologies 4, no. 1 (January 5, 2012): 81–91. http://dx.doi.org/10.1017/s1759078711001085.

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LInear amplification using Non-linear Components (LINC) is an architecture that achieves linear power amplification for radio-frequency (RF) transmitters. This paper describes the impact of RF power amplifiers (PAs) class on the overall system performances. The linearity and efficiency of the LINC transmitter with different PA classes (AB, B, C, D, E, F, F−1, and J) are evaluated and compared, in terms of error vector magnitude (EVM), adjacent channel leakage ratio (ACLR), and power added efficiency (PAE), for a 16QAM modulation having 5.6 dB peak to average power ratio. Simulations are performed using a gallium-nitride high electron mobility transistor (GaN HEMT) for a power amplifier with an output power of 10 W at 900 MHz.

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Liu, Xiang, Jiann S. Yuan, and Juin J. Liou. "InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability." Microelectronics Reliability 48, no. 8-9 (August 2008): 1212–15. http://dx.doi.org/10.1016/j.microrel.2008.06.009.

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Zhu, Shunwei, Hujun Jia, Xingyu Wang, Yuan Liang, Yibo Tong, Tao Li, and Yintang Yang. "Improved MRD 4H-SiC MESFET with High Power Added Efficiency." Micromachines 10, no. 7 (July 17, 2019): 479. http://dx.doi.org/10.3390/mi10070479.

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An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology computer aided design (TCAD) Sentaurus software in this paper. Based on multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (MRD 4H-SiC MESFET), the recessed area of MRD MESFET on both sides of the gate is optimized, the direct current (DC), radio frequency (RF) parameters and efficiency of the device is balanced, and the IMRD MESFET with a best power-added efficiency (PAE) is finally obtained. The results show that the PAE of the IMRD MESFET is 68.33%, which is 28.66% higher than the MRD MESFET, and DC and RF performance have not dropped significantly. Compared with the MRD MESFET, the IMRD MESFET has a broader prospect in the field of microwave radio frequency.

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Liu, Lianxi, Wenzhi Yuan, Junchao Mu, Zhangming Zhu, and Yintang Yang. "A Dual Band RF Energy Harvester with Hybrid Threshold Voltage Self-Compensation." Journal of Circuits, Systems and Computers 25, no. 06 (March 31, 2016): 1650055. http://dx.doi.org/10.1142/s0218126616500559.

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Threshold voltage self-compensation technology (TVSC) has been widely used in RF energy harvester. In this paper, the influence of the size of rectifying transistors, the stages and compensation orders of the rectifier, and the impedance matching network on the performance of RF energy harvester has been studied. A dual band RF energy harvester with hybrid threshold voltage self-compensation (HTVSC) is proposed in this paper in 65-nm CMOS process according to the distribution characteristic of the ambient RF energy. By combining TVSC and the technology of weak forward bias between the source and body of the rectifying transistor, the threshold voltage of MOSFET can be dramatically decreased. The performance of the RF energy harvester has been improved using this new technology. The simulation results show that the proposed dual band RF energy harvester can acquire energy at the band of 900[Formula: see text]MHz and 2.4[Formula: see text]GHz. At 900[Formula: see text]MHz-band (825–960[Formula: see text]MHz), with 1[Formula: see text]M[Formula: see text] load resistor, the output voltage of the energy harvester can be over 1.0[Formula: see text]V with a minimum [Formula: see text]18[Formula: see text]dBm RF input power and a maximum 13.8% power conversion efficiency (PCE). At 2.4[Formula: see text]GHz-band (2.4–2.485[Formula: see text]GHz), the minimum input power can be as low as [Formula: see text]19[Formula: see text]dBm with a maximum efficiency of 16.8%.

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Altet, Josep, Enrique Barajas, Diego Mateo, Alexandre Billong, Xavier Aragones, Xavier Perpiñà, and Ferran Reverter. "BPF-Based Thermal Sensor Circuit for On-Chip Testing of RF Circuits." Sensors 21, no. 3 (January 26, 2021): 805. http://dx.doi.org/10.3390/s21030805.

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A new sensor topology meant to extract figures of merit of radio-frequency analog integrated circuits (RF-ICs) was experimentally validated. Implemented in a standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology, it comprised two blocks: a single metal-oxide-semiconductor (MOS) transistor acting as temperature transducer, which was placed near the circuit to monitor, and an active band-pass filter amplifier. For validation purposes, the temperature sensor was integrated with a tuned radio-frequency power amplifier (420 MHz) and MOS transistors acting as controllable dissipating devices. First, using the MOS dissipating devices, the performance and limitations of the different blocks that constitute the temperature sensor were characterized. Second, by using the heterodyne technique (applying two nearby tones) to the power amplifier (PA) and connecting the sensor output voltage to a low-cost AC voltmeter, the PA’s output power and its central frequency were monitored. As a result, this topology resulted in a low-cost approach, with high linearity and sensitivity, for RF-IC testing and variability monitoring.

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Wang, Yao Hsien, Chao Hao Chen, Yu Wei Chang, Shih Hui Huang, Yi Feng Wei, Ming Hung Weng, Jhih Han Du, Wei Chou Wang, I. Te Cho, and Walter Wohlmuth. "Innovations in SiC Backside Processing and Manufacturing for GaN/SiC Products." Materials Science Forum 821-823 (June 2015): 995–98. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.995.

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GaN High Electron Mobility Transistors (HEMTs) on SiC have gained remarkable attention as these devices are revolutionizing the power and radio frequency (RF) electronics markets. Although significant advances have been made in transistor technology innovations, innovations pertaining to the backside process technology have been noticeably few. This paper will address and focus on innovations in the backside processing of GaN on SiC devices. A series of innovations in backside processing enable through SiC and GaN via etch rates to exceed 1.5 micron/minute. Wafer dicing process innovations afforded a >4x improvement in sawing throughput and a >6x improvement in blade lifetime through the novel addition of ultrasonic power to a conventional sawing tool.

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Djoric, Aleksandra, Natasa Males-Ilic, and Aleksandar Atanaskovic. "RF pa linearization by signals modified in baseband digital domain." Facta universitatis - series: Electronics and Energetics 30, no. 2 (2017): 209–21. http://dx.doi.org/10.2298/fuee1702209d.

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This paper represents the linearization of the RF power amplifier performed by a new approach that combines two different methods exploiting the modified baseband signals. The signals for linearization in both methods are formed and processed in digital domain. The required modified baseband signals for linearization are products of the second order nonlinearity of a nonlinear system fed by the useful baseband signal. In the first method, adequate part of the modified baseband signal is adjusted in amplitude and polarity and injected at the input and output of the amplifier transistor across the series LC resonant circuit. In the second method, the appropriate modified baseband signal set on the appropriate amplitude and phase modulates the fundamental carrier second harmonic, which is then inserted at the input and output of the amplifier transistor. The effects of the combined linearization method are considered on a single stage power amplifier for quadrature amplitude modulated signals characterized with frequency spacing between spectral components up to 60 MHz for different input power levels, as well as for WCDMA digitally modulated signal.

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Nam, Hyosung, Taejoo Sim, and Junghyun Kim. "A 2.4 GHz 20 W 8-channel RF Source Module with Solid-State Power Amplifiers for Plasma Generators." Electronics 9, no. 9 (August 26, 2020): 1378. http://dx.doi.org/10.3390/electronics9091378.

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This paper presents a novel multi-channel type RF source module with solid-state power amplifiers for plasma generators. The proposed module is consisted of a DC control part, RF source generation part, and power amplification part. A 2-stage power amplifier (PA) is combined with a gallium arsenide hetero bipolar transistor (GaAs HBT) as a drive PA and a gallium nitride high electron mobility transistor (GaN HEMT) as a main PA, respectively. By employing 8 channels, the proposed module secures better area coverage on the wafer during semiconductor processes such as chemical vapor deposition (CVD), etching and so on. Additionally, each channel can be maintained at a constant output power because they have a gain factor tunable by a variable gain amplifier (VGA). For that reason, it is possible to have uniform plasma density on the wafer. The operating sequence is controllable by an external DC control port. Moreover, copper–tungsten (CuW) heat spreaders were applied to prevent RF performance degradation from heat generated by the high power amplifier (HPA), and a water jacket was implemented at the bottom of the power amplification part for liquid cooling. Drawing upon the measurement results, the output power at each channel was over 43 dBm (20 W) and the drain efficiency was more than 50% at 2.4 GHz.

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Cain, B. M., P. A. Goud, and C. G. Englefield. "Electrical measurement of the junction temperature of an RF power transistor." IEEE Transactions on Instrumentation and Measurement 41, no. 5 (1992): 663–65. http://dx.doi.org/10.1109/19.177339.

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31

Yan, T., H. Liao, Y. Z. Xiong, R. Zeng, J. Shi, and R. Huang. "Cost-Effective Integrated RF Power Transistor in 0.18-$muhboxm$CMOS Technology." IEEE Electron Device Letters 27, no. 10 (October 2006): 856–58. http://dx.doi.org/10.1109/led.2006.882568.

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32

Mo, Haifeng, Yaohui Zhang, and Helun Song. "Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect." Active and Passive Electronic Components 2019 (July 14, 2019): 1–7. http://dx.doi.org/10.1155/2019/8425198.

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This paper discusses linearity and robustness together for the first time, disclosing a way to improve them. It reveals that the nonlinear transconductance with device working at quasi-saturation region is significant factor of device linearity. The peak electric field is the root cause of electron velocity saturation. The high electric field at the drift region near the drain will cause more electron-hole pairs generated to trigger the parasitic NPN transistor turn-on, which may cause failure of device. Devices with different drift region doping are simulated with TCAD and measured. With LDD4 doping, the peak electric field in the drift region is reduced; the linear region of the transconductance is broadened. The adjacent channel power ratio is decreased by 2 dBc; 12% more power can be discharged before the NPN transistor turn-on, indicating a better linearity and robustness.

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Na, Jongyun, Sang-Hwa Yi, Jaekyung Shin, Hyungmo Koo, Jongseok Bae, Keum-Cheol Hwang, Kang-Yoon Lee, and Youngoo Yang. "2.4 GHz GaN HEMT Class-F Synchronous Rectifier Using an Independent Second Harmonic Tuning Circuit." Sensors 21, no. 5 (February 25, 2021): 1608. http://dx.doi.org/10.3390/s21051608.

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This paper proposes a class-F synchronous rectifier using an independent second harmonic tuning circuit for the power receiver of 2.4 GHz wireless power transmission systems. The synchronous rectifier can be designed by inverting the RF output port to the RF input port of the pre-designed class-F power amplifier based on time reversal duality. The design of the class-F power amplifier deploys an independent second harmonic tuning circuit in the matching networks to individually optimize the impedances of the fundamental and the second harmonic. The synchronous rectifier at the 2.4 GHz frequency is designed and implemented using a 6 W gallium nitride high electron mobility transistor (GaN HEMT). Peak RF-dc conversion efficiency of the rectifier of 69.6% is achieved with a dc output power of about 7.8 W, while the peak drain efficiency of the class-F power amplifier is 72.8%.

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Chao, P. C., Kanin Chu, Jose Diaz, Carlton Creamer, Scott Sweetland, Ray Kallaher, Craig McGray, Glen D. Via, and John Blevins. "GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz." MRS Advances 1, no. 2 (2016): 147–55. http://dx.doi.org/10.1557/adv.2016.176.

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ABSTRACTA new device-first low-temperature bonded gallium nitride (GaN)-on-diamond high-electronic mobility transistor (HEMT) technology with state-of-the-art, radio frequency (RF) power performance is described. In this process, the devices were first fabricated on a GaN-on-silicon carbide (SiC) epitaxial wafer and were subsequently separated from the SiC and bonded onto a high-thermal-conductivity diamond substrate. Thermal measurements showed that the GaN-on-diamond devices maintained equivalent or lower junction temperatures than their GaN-on-SiC counterparts while delivering more than three-times higher RF power within the same active area. Such results demonstrate that the GaN device transfer process is capable of preserving intrinsic transistor electrical performance while taking advantage of the excellent thermal properties of diamond substrates. Preliminary step-stress and room-temperature, steady-state life testing shows that the low-temperature bonded GaN-on-diamond device has no inherently reliability limiting factor. GaN-on-diamond is ideally suited to wideband electronic warfare (EW) power amplifiers as they are the most thermally challenging due to continuous wave (CW) operation and the reduced power-added efficiency obtained with ultra-wide bandwidth circuit implementations.

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PANTOLI, LEONARDO, VINCENZO STORNELLI, and GIORGIO LEUZZI. "TUNABLE ACTIVE FILTERS FOR RF AND MICROWAVE APPLICATIONS." Journal of Circuits, Systems and Computers 23, no. 06 (May 14, 2014): 1450088. http://dx.doi.org/10.1142/s0218126614500881.

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In this paper, we present a low-voltage tunable active filter for microwave applications. The proposed filter is based on a single-transistor active inductor (AI), that allows the reduction of circuit area and power consumption. The three active-cell bandpass filter has a 1950 MHz center frequency with a -1 dB flat bandwidth of 10 MHz (Q ≈ 200), a shape factor (30–3 dB) of 2.5, and can be tuned in the range 1800–2050 MHz, with constant insertion loss. A dynamic range of about 75 dB is obtained, with a P1dB compression point of -5 dBm. The prototype board, fabricated on a TLX-8 substrate, has a 4 mW power consumption with a 1.2 V power supply voltage.

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DANNEVILLE, F., B. TAMEN, A. CAPPY, J.-B. JURAVER, O. LLOPIS, and J. GRAFFEUIL. "LOW FREQUENCY NOISE CONVERSION IN FETS UNDER NONLINEAR OPERATION." Fluctuation and Noise Letters 01, no. 03 (September 2001): L189—L195. http://dx.doi.org/10.1142/s021947750100041x.

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The conversion mechanisms of microscopic low frequency noise sources (e.g. generation-recombination noise sources) located in the channel of a FET (Field Effect Transistor), in the presence of a large RF signal, are investigated. It is shown that the base-band (low frequency) input gate noise voltage spectral density is strongly dependent on the magnitude of the input RF power applied to the FET. Moreover, the microscopic generation-recombination noise sources distributed along the channel are also responsible of up-converted input gate noise voltage spectral density around the RF frequency.

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Kopyt, Pawel. "Electrical characterization of a RF power transistor ceramic package including multiple wirebonds." International Journal of RF and Microwave Computer-Aided Engineering 23, no. 1 (May 10, 2012): 52–58. http://dx.doi.org/10.1002/mmce.20650.

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Gao, Huai, Haitao Zhang, Huinan Guan, Li-Wu Yang, and G. P. Li. "A compact composite transistor as a novel RF power cell for high-linearity power amplifiers." Microwave and Optical Technology Letters 45, no. 6 (2005): 483–85. http://dx.doi.org/10.1002/mop.20859.

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Tan, Gim Heng, Roslina Mohd Sidek, Harikrishnan Ramiah, Wei Keat Chong, and De Xing Lioe. "Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation." Scientific World Journal 2014 (2014): 1–5. http://dx.doi.org/10.1155/2014/163414.

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This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm2.

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40

Sajedin, Maryam, I. T. E. Elfergani, Jonathan Rodriguez, Raed Abd-Alhameed, and Monica Fernandez Barciela. "A Survey on RF and Microwave Doherty Power Amplifier for Mobile Handset Applications." Electronics 8, no. 6 (June 25, 2019): 717. http://dx.doi.org/10.3390/electronics8060717.

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This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.

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41

SIMIN, G., M. ASIF KHAN, M. S. SHUR, and R. GASKA. "INSULATED GATE III-N HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS." International Journal of High Speed Electronics and Systems 14, no. 01 (March 2004): 197–224. http://dx.doi.org/10.1142/s0129156404002302.

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Unique materials properties of GaN -based semiconductors that make them promising for high-power high-temperature applications are high electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance (when grown over SiC or bulk AlN substrates). The chemical inertness of nitrides is another key property. An AlGaN / GaN Heterostructure Field Effect Transistor (HFET) has been a topic of intensive investigations since the first report in 1991 [1]. Several groups demonstrated high power operation of AlGaN / GaN HFETs at microwave frequencies [2,3,4], including a 100 W output power single chip amplifier developed by Cree, Inc. and devices with 100 GHz cut-off frequency reported in [5]. However, in spite of impressive achievements, the potential of nitride based HFETs has not been fully realized as yet. The RF powers expected from the fundamental properties of nitride based materials significantly exceed the experimental data. One of the key problems limiting the HFETs RF characteristics is high gate leakage currents causing DC and RF parameter degradation. When the gate voltage goes positive the forward leakage current shunts the gate-channel capacitance and thus limits the maximum device current. When the gate voltage is negative, high voltage drop between the gate and the drain causes premature breakdown and thus limits maximum applied drain voltage. In addition, gate leakage currents increase the device sub-threshold currents, which decrease the achievable amplitude of the RF output. These limitations become even more severe at high ambient temperatures. The characteristics of III-N HFETs can be considerably improved by implementing a new approach, which results from the demonstration of good quality of SiO 2/ AlGaN and Si 3 N 4/ AlGaN interfaces. This approach opens up a way to fabricate insulated gate heterostructure field-effect transistors (IGHFETs), which have the gate leakage currents several orders of magnitude below those of regular HFETs, and exhibit better linearity and higher channel saturation currents. In this chapter, we describe design, characterization and applications of these novel devices.

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Alleva, Vincenzo, Andrea Bettidi, Walter Ciccognani, Marco De Dominicis, Mauro Ferrari, Claudio Lanzieri, Ernesto Limiti, and Marco Peroni. "High-power monolithic AlGaN/GaN high electron mobility transistor switches." International Journal of Microwave and Wireless Technologies 1, no. 4 (June 19, 2009): 339–45. http://dx.doi.org/10.1017/s1759078709990183.

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This work presents the design, fabrication, and test of X-band and 2–18 GHz wideband high-power single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switches in microstrip gallium nitride (GaN) technology. Such switches have demonstrated state-of-the-art performances and RF fabrication yields better than 65%. In particular, the X-band switch exhibits 1 dB insertion loss, better than 37 dB isolation, and a power handling capability better than 39 dBm at a 1 dB insertion loss compression point; the wideband switch shows an insertion loss lower than 2.2 dB, better than 25 dB isolation, and an insertion loss compression of 1 dB at an input drive higher than 38.5 dBm in the entire bandwidth.

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43

Jeon, Jung, and Kang. "Software-Based Adaptive Protection Control Against Load Mismatch for a Mobile Power Amplifier Module." Electronics 8, no. 11 (October 27, 2019): 1226. http://dx.doi.org/10.3390/electronics8111226.

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A closed-loop protection method for a radio frequency (RF) power amplifier (PA) module applicable to mobile handsets has been introduced. The load impedance of the PA was adaptively sensed by an embedded impedance detector which was digitally controlled and the system adjusted PA power using a feedback circuit to keep the PA safe based on a load mismatch detection. For verification, a two-stage hetero junction bipolar transistor (HBT) PA module for handsets was fabricated and tested against load mismatch. Measurement results showed that the technique could help PA survive at a 0.5V larger collector bias voltage condition than when the technique was not applied for the same mismatch condition with an acceptable RF performance degradation at nominal condition.

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Mediano, Arturo, and Nathan O. Sokal. "A Class-$E$ RF Power Amplifier With a Flat-Top Transistor-Voltage Waveform." IEEE Transactions on Power Electronics 28, no. 11 (November 2013): 5215–21. http://dx.doi.org/10.1109/tpel.2013.2242097.

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Shrivastava, Mayank. "Drain Extended Tunnel FET—A Novel Power Transistor for RF and Switching Applications." IEEE Transactions on Electron Devices 64, no. 2 (February 2017): 481–87. http://dx.doi.org/10.1109/ted.2016.2636920.

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Ladvánszky, J., and K. M. Osbáth. "Comparison of 6 Diode and 6 Transistor Mixers Based on Analysis and Measurement." Advances in Electrical Engineering 2016 (May 17, 2016): 1–17. http://dx.doi.org/10.1155/2016/8039679.

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Our goal is to overview semiconductor mixers designed for good large signal performance. Twelve different mixers were compared utilizing pn diodes, bipolar transistors, and/or junction field effect transistors. The main aspect of comparison is the third-order intercept point (IP3), and both circuit analysis and measurement results have been considered. IP3 has been analyzed by the program AWR (NI AWR Design Environment) and measured by two-tone test (Keysight Technologies). We provide three ways of improvement of large signal performance: application of a diplexer at the RF port, reduction of DC currents, and exploiting a region of RF input power with infinite IP3. In addition to that, our contributions are several modifications of existing mixers and a new mixer circuit (as illustrated in the figures). It is widely believed that the slope of the third-order intermodulation product versus input power is always greater than that of the first-order product. However, measurement and analysis revealed (as illustrated in the figures) that the two lines may be parallel over a broad range of input power, thus resulting in infinite IP3. Mixer knowledge may be useful for a wide range of readers because almost every radio contains at least one mixer.

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Lee, Changhyun, and Changkun Park. "2.4 GHz CMOS Power Amplifier with Mode-Locking Structure to Enhance Gain." Scientific World Journal 2014 (2014): 1–5. http://dx.doi.org/10.1155/2014/967181.

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We propose a mode-locking method optimized for the cascode structure of an RF CMOS power amplifier. To maximize the advantage of the typical mode-locking method in the cascode structure, the input of the cross-coupled transistor is modified from that of a typical mode-locking structure. To prove the feasibility of the proposed structure, we designed a 2.4 GHz CMOS power amplifier with a 0.18 μm RFCMOS process for polar transmitter applications. The measured power added efficiency is 34.9%, while the saturated output power is 23.32 dBm. The designed chip size is1.4×0.6 mm2.

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Xiang, Yong, Yan Bin Luo, Ren Jie Zhou, and Cheng Yan Ma. "A Low Noise Amplifier with 1.1dB Noise Figure and +17dBm OIP3 for GPS RF Receivers." Applied Mechanics and Materials 336-338 (July 2013): 1490–95. http://dx.doi.org/10.4028/www.scientific.net/amm.336-338.1490.

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A 1.575GHz SiGe HBT(heterojunction bipolar transistor) low-noise-amplifier(LNA) optimized for Global Positioning System(GPS) L1-band applications was presented. The designed LNA employed a common-emitter topology with inductive emitter degeneration to simultaneously achieve low noise figure and input impedance matching. A resistor-bias-feed circuit with a feedback resistor was designed for the LNA input transistor to improve the gain compression and linearity performance. The LNA was fabricated in a commercial 0.18µm SiGe BiCMOS process. The LNA achieves a noise figure of 1.1dB, a power gain of 19dB, a input 1dB compression point(P1dB) of -13dBm and a output third-order intercept point(OIP3) of +17dBm at a current consumption of 3.6mA from a 2.8V supply.

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Crispoldi, Flavia, Alessio Pantellini, Simone Lavanga, Antonio Nanni, Paolo Romanini, Leonardo Rizzi, Paola Farinelli, and Claudio Lanzieri. "Full integrated process to manufacture RF-MEMS and MMICs on GaN/Si substrate." International Journal of Microwave and Wireless Technologies 2, no. 3-4 (July 7, 2010): 333–39. http://dx.doi.org/10.1017/s1759078710000474.

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Radio Frequency Micro-Electro-Mechanical System (RF-MEMS) represents a feasible solution to obtain very low power dissipation and insertion loss, very high isolation and linearity switch with respect to “solid state” technologies. In this paper, we demonstrate the full integration of RF-MEMS switches in the GaN-HEMT (Gallium Nitride/High Electron Mobility Transistor) fabrication line to develop RF-MEMS devices and LNA-MMIC (Low Noise Amplifier/Monolithic Microwave Integrated Circuit) prototype simultaneously in the same GaN wafer. In particular, two different coplanar wave (CPW) LNAs and a series of discrete RF-MEMS in ohmic-series and capacitive-shunt configuration have been fabricated. RF-MEMS performances reveal an insertion loss and isolation better than 1 and 15 dB, respectively, in the frequency range 20–50 GHz in the case of pure capacitive shunt switches and in the frequency range 5–35 GHz for the ohmic-series switches. Moreover, the GaN HEMT device shows an Fmax of about 38 GHz and a power density of 6.5 W/mm, while for the best LNA-MMIC we have obtained gain better than 12 dB at 6–10 GHz with a noise figure of circa 4 dB, demonstrating the integration achievability.

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Hwang, Hoyong, Donghwan Seo, Jonghoon Park, and Changkun Park. "Investigation of the power transistor size related to the efficiency of switching-mode RF CMOS power amplifier." Microwave and Optical Technology Letters 56, no. 1 (November 25, 2013): 110–17. http://dx.doi.org/10.1002/mop.28068.

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Journal articles on the topic 'RF power transistor'

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