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Dissertations / Theses on the topic 'RF reactive sputtering'

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Published: 3 June 2025
Last updated: 20 July 2025

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1

Todi, Ravi. "INVESTIGATIONS ON RF SPUTTER DEPOSITED SICN THIN FILMS FOR MEMS APPLICATIONS." Master's thesis, University of Central Florida, 2005. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3330.

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With the rapid increase in miniaturization of mechanical components, the need for a hard, protective coatings is of great importance. In this study we investigate some of the mechanical, chemical and physical properties of the SiCN thin films. Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a RF magnetron sputtering system using a powder pressed SiC target. Films with various compositions were deposited on to silicon substrate by changing the N2/Ar gas ratios during sputtering. Nano-indentation studies were performed to investigate the mechanical properties such as
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2

Atcheson, Gwénaël Yves Peter. "Integration of oxynitride barriers by reactive RF sputtering for use in magnetic tunnel junctions." Thesis, Queen's University Belfast, 2014. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.675949.

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Magnetic field sensors were developed with use of a SFI Shamrock sputtering tool. GMR spin-valve type sensors were developed in CIP geometry requiring no additional processing once deposited, and TMR magnetic tunnel junctions were developed in CPP. This meant the additional development of a photolithographic process in order to produce working devices. The MTJs used MgO as a tunneling barrier in reference devices, and a novel oxynitride barrier in experimental devices deposited by reactive RF sputtering from an elemental target in a variable argon/oxygen/nitrogen atmosphere. Devices produced s
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3

Bosco, Giácomo Bizinoto Ferreira 1987. "Photoluminescence of Tb3+ in a-Si3N4:H prepared by reactive RF-Sputtering and ECR PECVD = Fotoluminescência de Tb3+ em a-Si3N4:H preparado por RF-Sputtering reativo e ECR PECVD." [s.n.], 2017. http://repositorio.unicamp.br/jspui/handle/REPOSIP/322722.

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Orientador: Leandro Russovski Tessler<br>Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin<br>Made available in DSpace on 2018-09-01T20:54:28Z (GMT). No. of bitstreams: 1 Bosco_GiacomoBizinotoFerreira_D.pdf: 9507140 bytes, checksum: 4980b29f48f98f8ff97e8a0a37b7577e (MD5) Previous issue date: 2017<br>Resumo: Este trabalho fornece caracterização ótica e estrutural de filmes finos compostos por nitreto de silício amorfo hidrogenado dopado com térbio (a-SiNx:H) ¿ crescidos por deposição química a vapor assistida por plasma gerado através de ressonância ciclo
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4

Jiang, Nanke. "Reactive Sputtering Deposition and Characterization of Zinc Nitride and Oxy-Nitride Films for Electronic and Photovoltaic Applications." University of Toledo / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1365165773.

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5

Jin, Chengfei. "Dépôts de TaNx par pulvérisation cathodique magnétron à fort taux d’ionisation de la vapeur pulvérisée." Thesis, Paris 11, 2011. http://www.theses.fr/2011PA112212/document.

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Grâce à ses excellentes propriétés physiques et chimiques (stable thermiquement, bon conducteur électrique et de chaleur, ductile, très dur mécaniquement, bonne inertie chimique), le matériau tantale et son nitrure TaNx sont utilisés comme revêtement de surface des outils, résistance électrique, barrière de diffusion au cuivre, croissance de nanotubes par un procédé chimique catalytique en phase vapeur. C’est ce matériau et son nitrure que nous avons étudiés lors de cette thèse.Aujourd’hui les exigences des industriels nécessitent que la pulvérisation cathodique magnétron (PCM) puisse être app
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6

Ruiz, Preciado Marco Alejandro. "Synthèse, caractérisation et réponse photocatalytique des oxydes semi-conducteurs à base de NiTiO3." Thesis, Le Mans, 2016. http://www.theses.fr/2016LEMA1037/document.

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Structures semi-conductrices à base de NiTiO3, et l'étude de leurs propriétés dans le but de les appliquer en photocatalyse. Une étude théorique et des simulations numériques ont été effectuées pour analyser les propriétés électroniques, vibrationnelles et optiques de NiTiO3 massif ou sous forme de clusters nanométriques. Les poudres NiTiO3 ont été synthétisées par sol-gel par réaction en phase solide, tandis que les films minces ont été obtenus par pulvérisation cathodique rf-magnétron. Les caractérisations de leurs propriétés physiques confirment l'obtention de NiTiO3 polycristallin dans sa
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7

Wang, Horng Jwo, and 王宏灼. "Growth of ALN Films by Reactive RF Sputtering." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/69354251443050827144.

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碩士<br>國立中山大學<br>電機工程研究所<br>83<br>C-axis oriented aluminum nitride (AlN) thin films on different substrates, such as Corning glass, Si(100), GaAs(100), LiNbO3, SiO2/Si(100), are prepared by reactive RF magnetron sputtering The dependence of highly c-axis preferred orientation and surface morphology of AlN thin films on various sputtering pressure, RF power, N2 concentration and substrate temperature for developing the acoustic-optical (AO) devices in the future. In this study, the cr
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8

Li, Wei-Pin, and 黎偉彬. "Photocatalytic TiO2 films deposited by RF reactive magnetron sputtering." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/63028510607121866359.

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碩士<br>龍華科技大學<br>工程技術研究所<br>97<br>Photocatalytic TiO2 films were deposited by rf reactive magnetron sputtering on non-alkali glass at 300 ℃ under total gas pressure of 10 mtorr with various N2/O2 flow ratios. The films were characterized by X-ray diffraction (XRD),atomic force microscopy (AFM), scanning electron microscopy (SEM) and UV-Vis spectroscopy. X-ray diffraction spectra evidenced that all the films show anatase (1 0 1) preferred orientation. The deposited TiO2 films were of the anatase phase with a (1 0 1) preferred orientation. We performed both photoinduced decomposition of methylene
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9

Kuo, Yi-Nan, and 郭益男. "Photoluminescence Characteristics of ZnO Thin Films by Reactive RF Magnetron Sputtering." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/13778007541907436201.

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碩士<br>國立中山大學<br>電機工程學系研究所<br>92<br>In this study, the reactive rf magnetron sputtering was used to deposit zinc oxide (ZnO) thin films on Si substrate. The optimal sputtering parameters for film as luminescence application were found to be oxygen concentration (O2/O2+Ar) of 21%, RF power of 100W, substrate temperature of 500°C and sputtering pressure of 5 mtorr. Beside, the thermal treatment procedure was carried out to improve the luminescence characteristics of ZnO thin films. The physical characteristics of ZnO thin films deposited on Si substrate with different sputtering parameters we
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10

Chou, Lin-I., and 周凌毅. "Investigation on transition silicon thin film using RF reactive sputtering process." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/02811678752389400202.

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碩士<br>國立中央大學<br>光電科學研究所<br>97<br>For mankind''s demand for the energy is greater and greater, it is necessary to develop renewable energies under limited resources. Solar energy plays an important role in the renewable energies, because it is inexhaustible. One of the most important components is hydrogenated silicon thin film solar cells. A lot of kinds of ideas for the solar cells have been proposed in recently. The commercial method to fabricate thin film solar cells is PECVD. However, the method has disadvantages such as high facility cost. In this research, a cheaper and without toxic met
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Jou, Wen-Nan, and 周文南. "Study of (100) oriented ZnO Films by Reactive RF Magnetron Sputtering." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/44678708866339904558.

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碩士<br>國立高雄應用科技大學<br>電子工程系<br>98<br>In this experiment, the substrate is used by Corning-Glass, we deposited the ZnO films on the Corning-glass substrate by reactive RF magnetron sputtering method. Changing the conditions of Oxygen flow rate, chamber pressure, substrate temperature, RF power, target-substrate distance, to find the sputtering parameters for (100) orientation ZnO films. The structures of the ZnO films were measured by x-ray diffraction (XRD), profile meter, Atomic Force Microscopy(AFM), UV-visible spectrophotometer(UV VIS) and Spectroscopic Ellipsometry(SE).Changing the parameter
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12

Zheng, Zong-Wen, and 鄭宗文. "Preparation of CuIn(Se,S)2 thin film using reactive rf sputtering." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/30093510977343462045.

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13

Chen, Wen Rong, and 陳文榮. "Deposition of AlN Thin Films on GaAs Substrates by Reactive RF Sputtering." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/36521906398187370377.

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碩士<br>國立中山大學<br>電機工程研究所<br>84<br>In this paper, we try to deposit c-axis oriented AlN films with smooth surface, good adhesion and strong piezoelectricity on GaAs substrates by reactive RF sputtering for the applications of SAW devices. The dependence of crystallization and surface morphology is investigated such as sputtering pressure, nitrogen concentration (N2/N2+Ar), RF power, and substrate temperature. The XRD and SEM results show that the structural characteristics and surface morphlo
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14

Kuo, Tai-Chao, and 郭泰照. "Characteristics of Transparent Conducting ZnO:Al Thin Films Prepared by Reactive RF Magnetron Sputtering." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/39267349818850566609.

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碩士<br>正修科技大學<br>電子工程研究所<br>94<br>In this study, the reactive rf magnetron sputtering was used to deposit Aluminum-doped zinc oxide (AZO) thin films on corning 7059 glass substrate at room temperature. The thermal treatment procedure was carried out to improve the electrical characteristics and optical characteristics of AZO thin films. The physical characteristics of AZO thin films with different post annealing process were obtained by the analyses of XRD and SEM. The conductivity properties of AZO thin films with different post annealing process were obtained by the analyses of four-point pro
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15

Yu, Jian-Shuo, and 余堅碩. "The Study of (103) Oriented AlN Thin Films by Reactive RF Magnetron Sputtering." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/96075960128106651753.

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碩士<br>國立高雄應用科技大學<br>電子與資訊工程研究所碩士班<br>96<br>The (103) oriented AlN thin films have excellent bulk acoustic wave (BAW) and surface acoustic wave (SAW) properties. In this research, the (103) oriented AlN thin films were deposited on p-type (100) silicon substrate by RF magnetron sputtering. The dependence between sputter conditions (RF powers, nitrogen concentrations, substrate temperatures and chamber pressures) were investigated by X-Ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The best (103) oriented AlN thin films were prepared with 350W RF po
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Wen, Yao-Wei, and 文耀葦. "Silicon Based Transparent Barrier Coatings for OLED Passivation by Reactive RF Magnetron Sputtering." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/23661270086276207688.

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碩士<br>南台科技大學<br>電機工程系<br>91<br>The Organic Light Emitting Diode(OLED) was extensively studied due to its superior properties of low cost, simple structure, wide viewing angles and low power consumption etc. It has been praised as the mainstream of displays for next generation. However, nowadays, the life-time of OLED is too short for commercial applications, and one of the significant issues for its degradation is the permeation of oxygen and water vapor into OLED. In this study, we use a novel technique for OLED passivation which composed of Si and SiOx. In this multilayer passivation, the Si
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Lin, Jiu-sheng, and 林久勝. "The Study of (100) Oriented AlN Thin Films by Reactive RF Magnetron Sputtering." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/09083608365642123834.

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碩士<br>國立高雄應用科技大學<br>電子工程系<br>97<br>The (100) oriented AlN thin films have excellent bulk acoustic wave (BAW) and surface acoustic wave (SAW) properties. In this research, the (100) oriented AlN thin films were deposited on p-type (100) silicon substrate by RF magnetron sputtering. The dependence between sputter conditions (RF powers, nitrogen concentrations, substrate temperatures and chamber pressures) were investigated by X-Ray diffraction (XRD)、atomic force microscopy (AFM) and transmission electron microscopy(TEM). The best (100) oriented AlN thin films were prepared with 350W RF power, 50
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LIN, YAN-AN, and 林彥安. "Investigation of organic silicon multilayer barrier films deposited by RF reactive magnetron sputtering." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/98580023303637061216.

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碩士<br>國立中央大學<br>光機電工程研究所<br>104<br>The recent rise of flexible electronics industry aiming to deliver lightweight, flexible and large-area products has been extensively applied in the fields of display. However, many material and process-related challenges appear when flexible organic components are fabricated on polymer substrate. Among the challenges, moisture permeation could degrade and reduce the performance and durability of organic flexible organic light-emitting diode (OLED), making it difficult to be developed. In order to prolong OELD’s lifetime, water vapor transmittance rate (WVTR)
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Lin, Yi-Tsung, and 林益宗. "Study on ZrO2 films by using RF reactive magnetron sputtering for MIM capacitors." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/77936559136903668053.

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碩士<br>國立高雄應用科技大學<br>機械與精密工程研究所<br>96<br>In this study, ZrO2 thin films were grown on a SiO2/Si and Cu/SiO2/Si substrate using RF magnetron sputtering., and the ZrO2 films were analyzed using XRD, ESCA, AFM, SEM and TEM. The capacitor devices were synthesized by lithography process, which was used in semiconductor industry and PCB industry. For electrical properties, Keithley 236 Source-Measure Unit is used to measure the I-V curves, and the C-V curves are obtained by E4284A precision LCR meter. Capacitor performance of ZrO2 dielectric films deposited on Cu metal electrodes to form MIM structur
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Lu, Pei-Yu, and 呂佩瑜. "Multi-element Nitride Film of (AlCrSiTi)xN100-x by RF Reactive Magnetron Sputtering." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/b5rka9.

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Chang, Jung-Fang, and 張榮芳. "The study of transparent conductive ZnO:Al thin films prepared by RF reactive magnetron sputtering." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/09582451163429421895.

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碩士<br>國立成功大學<br>材料科學(工程)學系<br>85<br>Abstract RF reactive magnetron sputtering was used to deposit transparent conductive ZnO:Al thin films on Corning 7059 glass and Si wafer respectively . The dependence of film properties including microstructure、optical and electronic properties on coating parameters ( target composition、RF power、substrate temperature、 pressure、O2 fraction、annealing temperature and annealing time
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Fu, Guo-Zhang, and 傅國彰. "The Study of Non-c-axis ZnO Thin Films by Reactive RF Magnetron Sputtering." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/44863905477777106213.

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碩士<br>國立高雄應用科技大學<br>電子與資訊工程研究所碩士班<br>96<br>In this research, We deposited the ZnO thin film with non-c-axis orientation on the p-type Si(100) substrate by reactive RF magnetron sputtering method. The micro-structures of the ZnO thin film were measured by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDS), Profile meter and Atomic Force Microscopy (AFM). The results exhibited that we successful deposited two kinds of different ZnO thin films with non-c-axis orientation on the p-type Si(100) substrate. The optimal sputtering parameters for (10
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Chou, Tao-Wei, and 周道煒. "Growth and Characteristics of InN Thin Film on Sapphire by RF Reactive Magnetron Sputtering." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/63674160554283635906.

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碩士<br>國立臺北科技大學<br>光電技術研究所<br>92<br>Growth of polycrystalline Indium Nitride thin film on (00.1) Sapphire substrate by rf reactive magnetron sputtering was studied. By changing the deposition conditions such as substrate temperature, nitrogen flow rate and RF power, we found that at 500°C of substrate temperature, 12sccm of N2 flow rate and 50W of RF power, better quality InN thin film with orientation (00.2), Hall mobility 26.1cm2/V-s, carrier concentration 5.65×1020cm-3,and sheet resistance 5.641Ω/sq was obtained. Next we handled the InN samples with thermal
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Chen, Hsin-Nan, and 陳信男. "Growth and Characteristics of GaNxP1-x Alloys on GaN by RF Reactive Magnetron Sputtering." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/19278041572130009210.

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碩士<br>國立臺北科技大學<br>光電技術研究所<br>92<br>This dissertation investigates the growth and characteristics of GaNxP1-x alloys on GaN by RF reactive magnetron sputtering. Before depositing the GaNP samples, a 2-μm-thick GaN buffer layer was growth on (0001) sapphire substrates by MOCVD. The characteristics of GaNxP1-x alloys are discussed in detail under varying deposition conditions such as different of nitrogen flow rate percentage, RF power, and growth temperature. Then we measured the band gap energy of samples and compared them with two of theories currently. By analyzing the measurement data, the d
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HUANG, QI-DONG, and 黃啟東. "Deposition of AIN films on Fe-Al-Mn alloys by reactive RF magnetron sputtering." Thesis, 1991. http://ndltd.ncl.edu.tw/handle/18283701724680658370.

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Fang, Han-Ruei, and 方漢瑞. "Study on MIS Properties of (100) Oriented AlN Films by Reactive RF Magnetron Sputtering." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/88163993756597286910.

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碩士<br>國立高雄應用科技大學<br>電子工程系<br>98<br>In this research, the non c-axis (100) oriented AlN thin films were deposited on p-type (100) silicon substrate by RF magnetron sputtering. The dependence between sputtering conditions ( Target-substrate distance, Sputtering time, RF power ) were investigated by X-Ray diffraction (XRD), Profile meter,Atomic Force Microscopy(AFM), C-V measurement. The best non c-axis (100) oriented AlN thin films were prepared with 350W RF power, 50% nitrogen concentration, 200℃substrate temperature, 9 mTorr chamber pressure, Sputtering time 2 hours and Target-substrate distan
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Chen, Chun-yu, and 陳俊宇. "The Characterization of Textured Ruthenium Dioxide (RuO2) Thin Films Prepared with Reactive RF Magnetron Sputtering." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/r898cv.

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碩士<br>國立清華大學<br>材料科學工程學系<br>92<br>The research is concentrated in the orientation control and characterization of ruthenium dioxide (RuO2) thin films deposited by RF magnetron sputtering. Changing sputtering parameters, including O2 flow ratio, substrate temperature, RF power density, and substrate type, is investigated. And the effects of sputtering parameters on the orientation, surface morphology, surface roughness, and chemical bonding of RuO2 thin films are characterized by XRD, SEM, SPM, and XPS respectively. Under mediate O2 flow ratio (25%) and lower substrate temperature (300℃), w
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Guo-Liang, Dai, and 戴國良. "The study of UV thin film prepared reactive by RF magnetic controlled sputtering with IAD." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/78763941568108179388.

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碩士<br>國立中央大學<br>光電科學研究所<br>89<br>The study of Al2O3 and SiO2 optical thin films prepared by RF magnetron sputtering system with IAD was concerned in this thesis. Due to IAD, we can see the change on optical properties including refractive index、extinction coefficient and transmittance along with micro correction on structure and surface roughness. We can get optical films of better optical properties with IAD. Base on this, we use Al2O3 and SiO2 as relatively high and low refractive index materials to prepare multi-layer coatings for the applications on UV laser、 space and remote sensing techn
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Liu, Chan-Ju, and 劉展睿. "Properties analysis of AZO/Ag:Pd multi-layer transparent conducting films by reactive RF magnetron sputtering." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/98223642615396897716.

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碩士<br>國立彰化師範大學<br>機電工程學系<br>91<br>The study aims at the multi-layer deposition of AZO（ZnO：Al） and Ag/Pd thin films were grown on type 1737F Corning glass by RF magnetron sputtering method. The process parameters of this study include RF power from 50 to 350 watts, oxygen content from 0% to 20% of working pressure and substrate is heated from room temperature to 200℃. In addition, a thickness of 10 nm of the Ag/Pd intermediate film was deposited between two layers of AZO film to decrease resistivity of AZO film. After the deposition, a four-point probe and spectrophotometer were used to measure
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Chang, Jung-Fang, and 張榮芳. "Growth characteristics and properties of transparent and conductive ZnO:Al films by reactive RF magnetron sputtering." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/46787972681512855918.

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博士<br>國立成功大學<br>材料科學及工程學系<br>90<br>Transparent and conductive ZnO:Al thin films were prepared by reactive RF magnetron sputtering. The electronic conductivity was improved by controlling the deposition parameters and post-annealing treatment while the relationship between the structural characteristics and optical as well as electric properties was investigated in this study. Four main issues investigated here were (1) the growth characteristics of ZnO:Al films, including the growth rate and residual stress of the films; (2) a detailed analysis in the microstructure of ZnO:Al films
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Chen, Hung-Chang, and 陳宏昌. "Growth and Characteristics of Zn-doped InN Alloys on Sapphire by RF Reactive Magnetron Sputtering." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/jbmjvv.

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碩士<br>國立臺北科技大學<br>光電工程系所<br>93<br>This dissertation investigates the growth and characteristics of Zn-doped Indium nitride alloys on (0001) Sapphire substrate by RF reactive magnetron sputtering. By changing the deposition conditions such as chamber pressure, nitrogen flow rate and RF power, we found that at 500°C of substrate temperature, chamber pressure 3m Torr, N2 flow rate 9 sccm and RF power under 50W, we obtained the main orientation of InN (0002) thin film and a better electric conduction quality of zinc-doped Indium Nitride material; Hall mobility of 14.6cm2/V-s, 5.6e20cm-3 carrier co
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Fu, Ganhua [Verfasser]. "Metal-semiconductor transition materials : FeS and VO2 thin films by RF reactive sputtering / von Ganhua Fu." 2007. http://d-nb.info/986034002/34.

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Chen, Yong-siou, and 陳永修. "Gadolinia-doped Ceria Solid Electrolyte Thin Films Prepared by RF Reactive Sputtering and Its Annealing Behavior." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/60673152149351808355.

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碩士<br>國立臺灣科技大學<br>化學工程系<br>96<br>Abstract This study is to evaluate the feasibility and application of Gadolinia-doped Ceria (GDC) thin films as solid electrolyte for Solid Oxide Fuel Cells (SOFCs). GDC thin films were deposited on commercialized alumina substrates and NiO-GDC substrates by RF reactive sputtering in various O2/Ar flow ratio and then treated with the thermal treatments. Experiment results indicated that the deposition rate, surface morphology, crystalline structure, and ionic conductivity of the deposited films depend on the O2/Ar flow ratio and annealing temperatures.
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Jhan, Yi-Ruei, and 詹益瑞. "Preparation of Visible Light Active Photocatalyst AgIn5S8-ZnS Thin Film by Reactive DC/RF co-Sputtering." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/68613477929395277692.

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碩士<br>中原大學<br>化學工程研究所<br>95<br>The visible-active photocatalyst thin film of AgIn5S8-ZnS was deposited on glass and ITO glass by DC/RF magnetron reactive co-sputtering. PL-fluorescence spectrum, SEM, XRD, Scanning potentiostat were used to analyze the properties and capability of the photocatalyst thin film after deposition. The optimum parameter of deposition was sputtering power DC/RF=50/50, substrate temperature 300℃, and H2S gas ratio Φ=0.4. The energy band-gap of the thin film is 1.96 eV, and the crystal structure include AgIn5S8 and ZnS obvious by XRD. The maximum photocurrent 12.96mA/cm
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Hsieh, Han-Jui, and 謝函叡. "Study on Anti-stick Glass-molding High-entropy Alloy Films Deposited by RF Reactive Magnetron Sputtering." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/qc7mw9.

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Lin, Yu-Zum, and 林煜尊. "Large-area synthesis of RuO2 nanowires by reactive rf magnetron sputtering method and their field emission properties." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/04567523528506087179.

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Wei, Chin-Lun, and 魏敬倫. "Investigation of SiOx:C barrier films deposited by RF reactive magnetron sputtering coupled with HMDSO/O2 plasma polymerization." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/85001071470295424064.

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碩士<br>國立中央大學<br>光電科學與工程學系<br>101<br>The recent rise of flexible electronics industry aiming to deliver lightweight, flexible, portable and large-area products has been extensively applied in the fields of display, lighting and biomedical engineering and will be the next-generation lifestyle-changing electronic devices. However, many material and process-related challenges appear when flexible organic components are fabricated on polymer substrate. Among the challenges, moisture permeation could degrade and reduce the performance and durability of organic flexible organic light-emitting diode (
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CAO, PHUONG-THAO, and CAO PHUONG THAO. "Processing and Property Characteristics of Doped and Codoped Gallium Nitride Films Grown by RF Reactive Sputtering Technique." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/63ysjj.

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博士<br>國立臺灣科技大學<br>材料科學與工程系<br>107<br>The nitride-based material had excellent properties such as high thermal conductivity, high electron mobility, high electron saturation velocity, and a wide band gap, which have been considerably studied by many researchers in recent years. The GaN and its alloys materials have achieved promising future for the application of electronic devices such as metal–oxide–semiconductor field effect transistors (MOSFETs), hetero-junction field-effect transistors (HJ-FETs), Schottky diodes, p–n junction diodes, laser diodes, light emitting diodes (LEDs) etc. However,
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Liu, Chia-Chen, and 劉家倩. "The Preparation and Characterization of the Silicon Oxynitride Gas Barrier Deposited on PES by RF Magnetron Reactive Sputtering." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/47646943585698582604.

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碩士<br>國立中興大學<br>材料工程學系所<br>94<br>In this study the SiON thin film was deposited on PES by reactive RF magnetron sputtering with the pure Si as target in Ar/N2 atmosphere.The coating parameters involved RF power, N2/Ar gas flow ratio and substrate bias.The water vapor permeation rate of original PES substrate is 52 (g/m2- day). The results from the experiments show that under the fixed working chamber pressure of 1.6 Pa and 30 minutes depositing time, the lowest water vapor permeability of 0.5 (g/m2-day) was obtained at the conditions as 250 W sputtering power, N2 flow rate ratio 100 % and subs
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chun, shih ya, and 石雅君. "The Preparation and Characterization of the Aluminum Nitride Barrier deposited on PET Substrate by RF Magnetron Reactive Sputtering." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/85591485291255285659.

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碩士<br>國立中興大學<br>材料工程學研究所<br>93<br>Abstract The utilization of the panel displays has convenient the daily living of people. The future trend has also turned it into focusing on the mobility and new applications, such as the substitutions of the glass substrates by flexible plastic substrates. However, since the plastic substrates can not effectively block the permeation of water vapor which leads into the damage of the internal circuits, a layer of gas barrier is used to deposit on the plastic substrates. In this research, an AlN thin film was deposited on the PET substrate and its resistanc
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Lee, Yueh-Shiu, and 李岳修. "Growth of Zinc Oxide Transparent Conductive Thin Films by Magnetron RF Reactive Sputtering and Studies of Their Properties." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/drk9rm.

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碩士<br>國立虎尾科技大學<br>光電與材料科技研究所<br>95<br>In this study, zinc oxide (ZnO) and Aluminum-doped zinc(AZO) transparent conductive oxide (TCO) films deposited on GaAs[111A]、[111B]、[100] and glass substrate have been prepared by reactive rf magnetron sputtering. The growth mechanism and properties of the ZnO and AZO films were studied. Aluminum-doped zinc(AZO) deposition was carried out at room temperature, various oxygen partial pressure, than annealed at 200℃ for 1、2 and 3 hours. The optical and electrical properties, surface morphology and microstructure of the sputtered Aluminum-doped zinc(AZO) thin
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Lee, Jian Der, and 李建德. "The electrical characteristics and physical properties of thin yttrium oxide and neodymium oxide gate dielectrics by reactive RF-sputtering." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/46506078532971220073.

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碩士<br>長庚大學<br>電子工程研究所<br>94<br>In this work, the yttrium oxide and neodymium oxide film were deposited on Si substrate by RF-sputtering. We investigated the influence of NH3 plasma on yttrium oxide film. It is found that the breakdown electrical field and gate leakage were improved by NH3 plasma treatment. Therefore, it suppresses the formation of the interfacial layer and silicate. In addition, we study the influence of Ar:O2 ratios to optimize the Y2O3 sputtering condition. We found that the optimize sputtering gas conditions for Y2O3 thin film is Ar:O2=25:5. This condition exhibits thinner
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Huang, Yij-Jie, and 黃義傑. "The Study of Optical and Electrical Properties of Nitrogen-doped Zinc Oxide Thin Films by Reactive RF Magnetron Sputtering." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/99662561399289014687.

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碩士<br>國立高雄應用科技大學<br>電子與資訊工程研究所碩士班<br>96<br>In this research, the zinc nitride (Zn3N2) thin films were deposited on 1737 Corning glasses by RF reactive sputtering magnetron. The optical and electrical properties of N2-doped ZnO(p-type ZnO) thin film were be investigated by using XRD、Hall effect、PL、UV-VIS and alpha step analysis. The p-type ZnO thin film was fabricated under the sputtering deposition time for 6 minutes and annealing temperature at 450°C, it’s optimal properties of the resistivity is 4.4(Ω-cm) and high transparency is 88%.
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Jun, Chen-Hong, and 陳泓均. "Effects of RF powers on characteristics of p-type amorphous aluminum carbon thin film alloy by reactive sputtering deposition." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/92484976074361185207.

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碩士<br>逢甲大學<br>材料科學與工程學系<br>102<br>This study investigates the effect of different RF powers on the characteristics of p-type amorphous aluminum carbon (a-AlC) thin film alloys prepared by reactive sputtering deposition. The microstructures, optical, and electrical properties of a-AlC thin film alloys are evaluated. Furthermore, the p-type a-AlC thin film alloys with identical thickness are deposited on n-type silicon (n-Si) substrates to fabricate a-AlC/n-Si device, and its current density-voltage and capacitance density-voltage behaviors have been investigated. Experimental results indicate t
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Lu, Jo Ling, and 呂若菱. "Deposition of p-type Aluminum and Nitrogen Co-doped Zinc Oxide Transparent Conductive Thin Films by Reactive RF Magnetron Sputtering." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/89683812120939027212.

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碩士<br>長庚大學<br>化工與材料工程研究所<br>97<br>The objectives of this research are to prepare p-type transparent conductive aluminum-doped zinc oxide (AZO) thin films with excellent properties by adjusting volume ratio of reactive sputtering gas N2 and by using AZO ceramic targets. In addition, the effects of N2 reactive gas and the amount of alumina dopant in the AZO target as well as other sputtering parameters on the electrical, optical, and structural properties of AZO thin films was also investigated. The experimental results showed that all the AZO thin films deposited by RF reactive magnetron sp
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Hsu, Che-Wei, and 許哲維. "Investigation of Relationship between the Plasma and Material Characteristics of Zinc Oxide (ZnO) Thin Film by Radio Frequency (RF) Reactive Magnetron Sputtering." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/19073731043445722338.

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博士<br>國立交通大學<br>機械工程學系<br>98<br>Zinc oxide (ZnO) thin film was deposited on glass substrate by RF reactive magnetron sputtering. The plasma parameters, structural, chemical, optical and hydrophilic/hydrophobic properties of the film were measured using a Langmuir probe, x-ray diffractometry (XRD), X-ray Photoelectron Spectroscopy (XPS), a UV-VIS spectrophotometer, and contact angle measurement, respectively. Results show that plasma density, electron temperature, deposition rate, and estimated ion bombardment energy all increased with increasing applied RF power. The deposition rate and ion bo
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Lo, Chen Yang, and 羅振洋. "Deposition and Electrical Conductive Mechanism of p-type Aluminum and Nitrogen Co-doped Zinc Oxide TransparentConductive Thin Films by Reactive RF Magnetron Sputtering with AZO Ceramic Target." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/09624050290352501771.

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碩士<br>長庚大學<br>化工與材料工程學系<br>98<br>p-type nitrogen-aluminum co-doped zinc oxide thin films were deposited on glass substrates by radio frequency reactive magnetron sputtering using aluminum-doped zinc oxide (AZO) ceramic target (3.7 wt% Al2O3) and different nitrogen-containing reactive gases (N2 and N2O). In addition, the effects of sputtering parameters (reactive gas ratio, substrate temperature, RF power, and working pressure, etc.) on the characteristics (including structure, electronic and optical properties) of AZO thin film were also investigated. Using N2 as reactive gas, p-type nitr
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Hsu, Hui-Hsin, and 許惠欣. "Characteristics of Gd2O3 Gate Dielectric Deposited by Reactive RF-sputterin." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/31592765566424389472.

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碩士<br>長庚大學<br>電子工程研究所<br>93<br>According to the ITRS (International Technology Roadmap for Semiconductor), the dimension of devices were scaling down focus on the channel and gate silicon dioxide thickness to be decreased decrease rapidly. It would face several problems. As the oxide thickness less than 3nm, the gate leakage current and boron penetration through oxide are more seriously to influence the properties of devices. In order to resolve these questions, that the replacement of SiO2 was required by High-k dielectric materials and I researched extensively, such as Ta2O5, Al2O3, HfO2, Gd
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