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Dissertations / Theses on the topic 'RF sputtering'

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Published: 4 June 2021

Last updated: 25 July 2025

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1

Prasankumar, Rohit Prativadi 1975. "Novel saturable absorber devices grown using RF and magnetron RF sputtering." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/80599.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.<br>Includes bibliographical references (leaves 81-85).<br>by Rohit Prativadi Prasankumar.<br>S.M.

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Subramanian, Senthilnathan. "Characterization of cadmium zinc telluride solar cells by RF sputtering." [Tampa, Fla.] : University of South Florida, 2004. http://purl.fcla.edu/fcla/etd/SFE0000429.

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3

Silva, Adilson Oliveira da. "Estudo da obtenção de filmes de anatásio utilizando rf-magnetron sputtering." Florianópolis, SC, 2000. http://repositorio.ufsc.br/xmlui/handle/123456789/78441.

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Tese (doutorado) - Universidade Federal de Santa Catarina, Centro Tecnológico.<br>Made available in DSpace on 2012-10-17T14:24:13Z (GMT). No. of bitstreams: 0Bitstream added on 2014-09-25T18:14:24Z : No. of bitstreams: 1 171844.pdf: 210584418 bytes, checksum: d9e7ff65b380888e7b8f6e1f64840d9e (MD5)<br>Filmes finos de TiO2 foram preparados pela técnica de RF-magnetron sputtering utilizando-se um alvo de rutilo. As camadas foram depositadas sobre substratos de Silício monocristalino e sílica vítrea, mantidos a temperatura ambiente. Primeiramente foi verificado a influência da fração molar de ox

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Todi, Ravi. "INVESTIGATIONS ON RF SPUTTER DEPOSITED SICN THIN FILMS FOR MEMS APPLICATIONS." Master's thesis, University of Central Florida, 2005. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3330.

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With the rapid increase in miniaturization of mechanical components, the need for a hard, protective coatings is of great importance. In this study we investigate some of the mechanical, chemical and physical properties of the SiCN thin films. Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a RF magnetron sputtering system using a powder pressed SiC target. Films with various compositions were deposited on to silicon substrate by changing the N2/Ar gas ratios during sputtering. Nano-indentation studies were performed to investigate the mechanical properties such as

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5

Treharne, Robert E. "RF magnetron sputtering of transparent conducting oxides and CdTe/CdS solar cells." Thesis, Durham University, 2011. http://etheses.dur.ac.uk/3310/.

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The applicability of radio frequency magnetron sputtering (RFMS) for the development of: a) transparent conducting oxides (TCOs) and b) fully sputtered CdTe/CdS solar cells is demonstrated. TCO materials - In2O3:Sn (ITO), SnO2:F (FTO), ZnO:Al (AZO) and ZnO:F (FZO) - were investigated with respect to key deposition parameters in an attempt to generate films with low resistivities and high transmittances. Minimum resistivity values of 1.2 x 10^-4 Ohm.cm and 4.7 x 10^-4 Ohm.cm were achieved for films of ITO and AZO respectively while maintaining transmittances of > 80%. Such films are viable for

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6

Ramalhadeiro, Rui Miguel Martins. "Estudo estrutural e ótico de filmes de ZnO/MgO por RF-sputtering." Master's thesis, Universidade de Aveiro, 2012. http://hdl.handle.net/10773/9300.

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Mestrado em Física<br>Este trabalho tem como objetivo o estudo estrutural e ótico de filmes de óxido de Zinco (ZnO) em substrato de óxido de Magnésio (MgO), em função das condições de crescimento por RF-sputtering (pulverização catódica de rádiofrequência). As condições de pressão parcial de O2 e temperatura do substrato são variáveis que influenciam bastante o crescimento de filmes finos de ZnO. A escolha do substrato cúbico de MgO, reside no facto deste material além de ser um óxido, possuir arranjo atómico não polar que poderá favorecer o crescimento de filmes finos de ZnO com orient

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Peres, Marco António Baptista. "Estudo de defeitos em filmes finos de ZnO depositados por Rf-sputtering." Doctoral thesis, Universidade de Aveiro, 2014. http://hdl.handle.net/10773/13983.

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Doutoramento em Engenharia Física<br>Neste trabalho foram estudados diferentes filmes finos de ZnO depositados por Rf-Sputtering. Filmes finos de ZnO com diferentes propriedades óticas foram obtidos intencionalmente variando os parâmetros de deposição. De modo a correlacionar as propriedades óticas e estruturais com os parâmetros de deposição, foram utilizadas diferentes técnicas de caracterização avançadas, tais como, fotoluminescência, microscopia de força atómica, difração de raios- X e retrodispersão de Rutherford. Este trabalho centra-se na discussão e análise das bandas de emissão

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8

Campbell, Bryce W. "Preparation and characterization of lithium thiogermanate thin films using RF magnetron sputtering." [Ames, Iowa : Iowa State University], 2006.

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9

Bosco, Giácomo Bizinoto Ferreira 1987. "Photoluminescence of Tb3+ in a-Si3N4:H prepared by reactive RF-Sputtering and ECR PECVD = Fotoluminescência de Tb3+ em a-Si3N4:H preparado por RF-Sputtering reativo e ECR PECVD." [s.n.], 2017. http://repositorio.unicamp.br/jspui/handle/REPOSIP/322722.

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Orientador: Leandro Russovski Tessler<br>Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin<br>Made available in DSpace on 2018-09-01T20:54:28Z (GMT). No. of bitstreams: 1 Bosco_GiacomoBizinotoFerreira_D.pdf: 9507140 bytes, checksum: 4980b29f48f98f8ff97e8a0a37b7577e (MD5) Previous issue date: 2017<br>Resumo: Este trabalho fornece caracterização ótica e estrutural de filmes finos compostos por nitreto de silício amorfo hidrogenado dopado com térbio (a-SiNx:H) ¿ crescidos por deposição química a vapor assistida por plasma gerado através de ressonância ciclo

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10

Gignac, Lynne Marie. "Processing and characterization of RF sputtered alumina thin films." Diss., The University of Arizona, 1988. http://hdl.handle.net/10150/184611.

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Thin films of alumina were deposited on ferrite (NiₓZn₍₁₋ₓ₎Fe₂O₄), glass, single crystal silicon and graphite substrates by RF sputtering. Though standard, amorphous Al₂O₃ films are readily soluble in hot phosphoric acid, these sputtered films exhibited only reluctant etchability by the acid. Experiments were initially performed to understand the parameters in the sputtering process which were influential in the formation of unetchable films. The results showed that a high concentration of water vapor or oxygen molecules in the sputtering chamber during deposition was the most significant vari

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Awan, Shamshad Akhtar. "Electrical properties of RF magnetron-sputtered insulating silicon nitride thin films." Thesis, Keele University, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.311646.

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Si3N4 thin films were prepared by RF magnetron sputtering using N2 or Ar as the sputtering gas. The films were amorphous, with the deposition rate for Ar-sputtered films increasing with RF power and Ar pressure. Sandwich samples having both Al and Au electrodes were prepared. Capacitancevoltage measurements indicated that the contacts for Nj-sputtcred samples were ohmic, while Ar-sputtered samples with Al electrodes exhibited depletion regions. Values of the relative permittivity of 6.3 (AI electrodes) and 6.8 (Au electrodes) were determined from geometric capacitance variations in Ny-sputrere

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Chang, Ying-Che, and 張英哲. "Study on RF Sputtering system." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/4a4792.

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碩士<br>國立中山大學<br>電機工程學系研究所<br>96<br>In this study, the RF sputtering system has been investigated comprehensively. Firstly, the relationship among the thickness of dark space, DC bias and electrode area under RF discharge is discussed. The impedance matching network of RF sputtering system, the configuration of glow discharge and their related electrical parameters are introduced and illustrated. The network theorem is used to calculate the loading impedance of RF sputtering system and to design an impedance matching circuit. And then the equivalent circuit of sheath and plasma in parallel pla

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13

Ang, Wie Ming. "ACTFEL phosphor deposition by RF sputtering." Thesis, 1992. http://hdl.handle.net/1957/35925.

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14

Huang, Shuei Ching, and 黃學經. "RF Magnetron Sputtering Calcium Fluoride on Si." Thesis, 1993. http://ndltd.ncl.edu.tw/handle/19259890456934243086.

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15

Wang, Horng Jwo, and 王宏灼. "Growth of ALN Films by Reactive RF Sputtering." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/69354251443050827144.

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碩士<br>國立中山大學<br>電機工程研究所<br>83<br>C-axis oriented aluminum nitride (AlN) thin films on different substrates, such as Corning glass, Si(100), GaAs(100), LiNbO3, SiO2/Si(100), are prepared by reactive RF magnetron sputtering The dependence of highly c-axis preferred orientation and surface morphology of AlN thin films on various sputtering pressure, RF power, N2 concentration and substrate temperature for developing the acoustic-optical (AO) devices in the future. In this study, the cr

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Tsou, Chu-Hua, and 鄒居樺. "Study on Impedance Matching for RF Sputtering Optimization." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/et9qmg.

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碩士<br>國立中山大學<br>電機工程學系研究所<br>95<br>In this study, we propose to investigate the variation of impedance,energy transfer from the RF generator to the discharge is not perfect, and then to improve the sputtering efficiency. For the deposition of insulating film by sputtering technique, the external factors such as input RF power,gar pressure and gas flow rate, and the internal parts of sputtering system such as sputtering target, substrate, and the structure of internal wells of chamber, lead to deviate sputtering parameters such as the DC bias on substrate, ion density in the plasma, and the cap

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董家慶. "Electroless Ni interlayer medified coating by rf sputtering." Thesis, 1992. http://ndltd.ncl.edu.tw/handle/57417444621947816727.

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Huang, S. J., and 黃世仁. "RF-Magnetron Sputtering TiO2 and Y2O3 on Si." Thesis, 1994. http://ndltd.ncl.edu.tw/handle/49465714579935661314.

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碩士<br>國立成功大學<br>材料科學(工程)研究所<br>82<br>Composite dielectric thin films of various combinations of TiO2 and Y2O3 were deposited by RF-magnetron sputtering in a low pressure ambient of O2 and Ar. In this work, a magnetron sputtering system is constructed with a 13.56 MHz and 500W RF power. The properties of film including growth rate, refractive index, morphology, composition, crystallinity, microstructure, the optical and electrical properties are investigated as func- tions of RF power, subs

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LI, PAO-SHENG, and 李寶生. "CuO Nanostructure Gas Sensor Developed By RF Sputtering." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/hbqm2u.

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碩士<br>國立臺南大學<br>電機工程學系碩博士班<br>106<br>A large number of factories and vehicles are continuously increasing with the development of industries and cities in the world, and pollutants in the air are also increasing. Vehicle emissions, burning of waste, create construction, agricultural land cultivation and animal husbandry, etc. The main content of this study is the use of copper oxide as a sensing material, applied to MEMS gas sensors, and micro-heaters in MEMS gas sensors to measure various gases including oxidation and reduction gas. In this study, the experimental copper oxide gas sensor

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Zhu, Cong Ming, and 朱聰明. "Preparation of PZT thin films by magnetron RF sputtering." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/84634416191423156040.

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21

Cho, Sheng, and 卓昇. "Manufacturing AZOY-based thin film transistors with RF-sputtering." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/97822454730458263670.

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碩士<br>國立清華大學<br>電子工程研究所<br>97<br>The thin-film transistor (TFT) is the first field-effect transistor, and it was expected to substitute for the vacuum tube applied in the computer. But the TFT was replaced gradually by the Metal-oxide-semiconductor field-effect transistor which has superior performance. The TFT was not paid much attention until the appearance of new application, which was the switch of pixels in LCDs, it was important especially LCDs with large size. The metal-oxide-based TFT has advantages of low cost, low temperature in process, few steps in process, high transparency, and h

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Sung, Wen-Cheng, and 宋文正. "Fabrication of LiNbO3 thin film by RF magnetron sputtering." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/18485524547870684693.

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碩士<br>大同大學<br>光電工程研究所<br>97<br>LiNbO3 thin films were deposited on different substrate by RF magnetron Sputtering deposition technique. The substrate temperature, deposition pressure, RF power, and Ar/O2 gas ratio were varied during the deposition of LiNbO3 thin film. The distance between target and substrate was 43 mm. The microstructuce and surface morphology were examined by using α–step, scanning electron microscopy, and X-ray diffractionmetry. The LiNbO3 thin film on Si substrate with Al2O3 buffer layer substrate grown at substrate temperature of 600℃, deposition pressure of 15 mTorr, RF

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23

Li, Wei-Pin, and 黎偉彬. "Photocatalytic TiO2 films deposited by RF reactive magnetron sputtering." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/63028510607121866359.

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碩士<br>龍華科技大學<br>工程技術研究所<br>97<br>Photocatalytic TiO2 films were deposited by rf reactive magnetron sputtering on non-alkali glass at 300 ℃ under total gas pressure of 10 mtorr with various N2/O2 flow ratios. The films were characterized by X-ray diffraction (XRD),atomic force microscopy (AFM), scanning electron microscopy (SEM) and UV-Vis spectroscopy. X-ray diffraction spectra evidenced that all the films show anatase (1 0 1) preferred orientation. The deposited TiO2 films were of the anatase phase with a (1 0 1) preferred orientation. We performed both photoinduced decomposition of methylene

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Chen, Yu-hsiang, and 陳煜祥. "Research of Si:H Thin-Film by RF Magnetron Sputtering." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/20915329113832725729.

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碩士<br>雲林科技大學<br>光學電子工程研究所<br>98<br>The main research is fabrication of intrinsic a-Si and n-type Si on the p-type poly Si wafer for thin-film solar cell by RF magnetron sputtering. Using post deposit annealing（PDA） improves the thin film of the intinsic a-Si to form polycrystal thin film which can capture more photons. The a-Si thin film treated with PDA at 600℃ shows the largest grain size observed by FE-SEM and the minimum leakage current measured by I-V measurements. The intrinsic a-Si was deposited by sputtering at the room temperature during the sputtering H2 gas was introduced. We res

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Shen, Guan-Hung, and 沈冠宏. "AZOY transparent conducting thin films prepared by RF magnetron sputtering." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/34m7a8.

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碩士<br>國立高雄大學<br>化學工程及材料工程學系碩士班<br>97<br>As the development of photoelectricity industry, new materials are invented continuously. The researches of “transparent conducting oxide” have played an important role because the two characteristics of transparent conducting thin films, transparency and conductivity, can be widely applied for the industry of semiconductor and photoelectricity such as LCD, solar cells, and transparent touch panel etc. This research utilizes RF magnetron sputtering system to deposit AZOY thin films on the glass substrate. During the sputtering process, the distance betw

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Yang, Li-Wei, and 楊立暐. "Preparation of transparent antibacterial Cu2Y2O5 thin film by RF sputtering." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/psnnuj.

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碩士<br>國立臺北科技大學<br>材料及資源工程系研究所<br>101<br>Delafossite type of CuYO2, CuCrO2, and CuAlO2 are the potential candidates for p type transparent conducting oxide films (TCOs). Due to the wide range of applications for TCOs in electronic devices has generated interest in understanding the growth and characterization of these materials. Continue our previous research of antibacterial thin films, in order to improve the transparency and fit the RoHs guide in this work employed a radio-frequency (RF) magnetron sputtering method to prepare Cu2Y2O5 thin film on quartz substrate and followed by post-deposit

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Lin, Chu-Jian, and 林楚健. "Investigation of Gallium Arsenide Thin Films deposited by RF Sputtering." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/48n87a.

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碩士<br>國立中央大學<br>光電科學與工程學系<br>104<br>In this study the Gallium Arsenide thin films deposited on the Germanium wafer by using sputtering method was discussed. The advantage of sputtering method was its lower costs and nontoxic process. Firstly, the properties of the Gallium Arsenide films were analyzed with varied RF power and the substrate temperature processed .Then , the annealing were developed to optimize the Gallium Arsenide film quality . XRD , Raman , AFM and TEM to analyze the results of grown the Gallium Arsenide thin films to achieve a good crystallize GaAs film .

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Lin, Chih-an, and 林志安. "The study of Mn doped BiFeO3 by RF magnetic sputtering." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/03591514725897348116.

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碩士<br>國立成功大學<br>材料科學及工程學系碩博士班<br>96<br>BiFeO3(BFO) is one of the most potential multiferroic materials for new device applications. This is because BFO has high ferroelectric Curie temperature (850oC) and antiferromagnetic Neil temperature (370oC), which are both above room temperature. This research mainly investigated the effects of manganese doping, i.e. BiFe1-XMnXO3 x = 0, 0.1, 0.2, 0.3, 0.4, on the BFO properties. Because BiMnO3 (BMO) is a ferroelectric ferromagnet and also, Mn3 + ion has a similar radius to Fe3 + ion, it was expected to be able to replace some Fe3 + with Mn3 +, resulting

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Tiao, Sam, and 刁勇升. "The preparation of SrBi2Ta2O9 thin film by RF. Magnetron sputtering." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/49998636880097292944.

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碩士<br>南台科技大學<br>電子工程系<br>93<br>The dielectric characteristics of layer structured bismuth material SrBi2Ta1.8V0.2O9 have been well developed. SrBi2Ta1.8V0.2O9 ceramic was used as the target material and SrBi2Ta1.8V0.2O9 thin film was deposited on ITO glass substrate by R.F. magnetron sputtering method at room temperature for 10~40 min. A 200-600nm thin film was obtained by rapid thermal annealing (RTA) process at 600oC with different time in oxygen using the raising temperature rate of 900oC/min. The crystallization and dielectric characteristics of SrBi2Ta1.8V0.2O9 thin film were developed wi

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yu-ming, Huang, and 黃裕銘. "Study of ZnO Films Process Parameter by RF Magnetron Sputtering." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/19324478790699872340.

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碩士<br>南台科技大學<br>電子工程系<br>93<br>The R.F magnetron sputtering technique is employed in this study , ZnO thin films deposited on corning 1737F glass、 Si wafer (p-type (100)) by using ZnO target. The reaction atmosphere was mixture argon and oxygen. In the suitable controll by O2 concerntration, work pressure, R.F power and substrate, the ZnO thin film with C-axis preffered orientation was obtained. The microstructure and properties of the resulting ZnO thin films were examined by using X-ray diffractometry、SEM、α- step、TEM and AFM. The experimental result indicated that the ZnO thin films in the s

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Chi, Chu-Te, and 戚居德. "Fabrication of flexible transparent p-n heterojunction by RF sputtering." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/26723107584760951924.

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碩士<br>臺灣大學<br>光電工程學研究所<br>98<br>This thesis reports the deposition of n⁺AZO, n-ZnO, i-ZnO, n-MgxZn1-xO and p-CuAlO2 transparent conducting thin films by RF sputtering and the fabrication of transparent p-n hetero-junction thin film diode without additional heat treatment. Both commercial ITO coated glass and PET are used as substrates. Four device structures are studied here: (1) n⁺AZO/p-CuAlO2/ITO, (2) n⁺AZO/n-ZnO/p-CuAlO2/ITO, (3) n⁺AZO/n-MgxZn1-xO/p-CuAlO2/ITO, (4) n⁺AZO/i-ZnO/p-CuAlO2/ITO. The I-V characteristics and UV responsivity of the thin film diodes with p-layer, n-layer and i- laye

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Shih, Ming-Hong, and 施明宏. "Bi1-xSbx films prepared by RF sputtering and annealing process." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/07531697163457077789.

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碩士<br>國立臺灣大學<br>物理研究所<br>99<br>In this thesis we use RF sputtering system, preparation of Bi film on the surface of the silica substrate, then prepare different thicknesses of Sb in Bi film, the formation of varying proportions of Bi / Sb bilayers, follow-up for Bi / Sb bilayers after annealing to form different proportions of Bi1-xSbx alloy, because Bi and Sb elements in the same group V and have the same crystal structure, after X-Ray analysis and crystal planes of JCPD database show that Bi / Sb bilayers after annealing have full mutual diffusion of alloy, high-resolution field emission ele

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Chang, Chih-Yuan, and 張智淵. "Investigation of transparent conductive ZnO:Al thinfilms deposited by RF sputtering." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/382w29.

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碩士<br>國立中山大學<br>光電工程學系研究所<br>97<br>In this thesis, we focus on the properties of Al-doped ZnO (AZO) thin films for opto-electronic applications. AZO films were prepared by radio-frequency sputtering on silicon and optical glass substrates with 98wt% ZnO and 2wt% Al2O3 alloy target. AZO films were prepared under various deposition parameters (RF power, background pressure, Ar flow, and substrate temperature). The optimal parameters for the conductive and transparent AZO films are power = 100W, pressure = 3mTorr, Ar flow = 5sccm, and substrate temperature 250℃. The film exhibits the resistivity(

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Lu, Yung-wei, and 盧勇瑋. "Fabrication of BaNd2Ti5O14 Thin Film Capacitors by RF Magnetron Sputtering." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/7af7r8.

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碩士<br>國立中山大學<br>電機工程學系研究所<br>97<br>The motivation of this study is based on integrated passive filter dielectric thin films with thin layers. Reducing the area of integrated passive filter in a circuit by enhancing dielectric constant with same capacitance and thickness is the purpose which has been expected. To fabricate the thin film MIM structure capacitors, RF magnetron sputtering method was selected and BaNd2Ti5O14 composed materials treated as the target to grow the thin film dielectric layer in MIM structure capacitors. In this study the MIM structure capacitors were deposited on alumin

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Chen, Hsiao-Lun, and 陳孝綸. "Multi gas barrier film deposited by RF magnetron sputtering system." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/w545zs.

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碩士<br>國立中央大學<br>能源工程研究所<br>107<br>In recent years, electronic digital products become lighter, the demand for flexible electronic products become higher and higher. Due to the water vapor transmission rate(WVTR) of the packaging is less than 10-3 g/m2/day, gas barriers on plastic substrates coatings are also becoming increasingly important. In this study, plasma enhance chemical vapor deposition (PECVD) was used to control oxygen and hexamethyldisiloxane (HMDSO), and organic Si-O-Si films were being coated on the plastic substrate. Changing the gas flow can coat different structures of films.

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"XPS study of RF-sputtered copper in silicon dioxide." 2003. http://library.cuhk.edu.hk/record=b5891761.

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by Leung Kit Sum = 透過X光電子譜研究射頻濺射之銅復合物石英 / 梁潔心.<br>Thesis submitted in: August 2002.<br>Thesis (M.Phil.)--Chinese University of Hong Kong, 2003.<br>Includes bibliographical references (leaves 77-78).<br>Text in English; abstracts in English and Chinese.<br>by Leung Kit Sum = Tou guo X guang dian zi pu yan jiu she pin jian she zhi tong fu he wu shi ying / Liang Jiexin.<br>Abstract --- p.i<br>論文摘要 --- p.iii<br>Acknowledgement --- p.iv<br>Table of Content --- p.v<br>List of Figures --- p.ix<br>List of Tables --- p.xi<br>Chapter CHAPTER 1 --- INTRODUCTION<br>Chapter 1.1 --- Nanoparticles and

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jared and 林榮達. "Study on the properties of small scaled magnetron RF sputtering apparatus." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/61956662601637012789.

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Liu, Chu-Fang, and 劉筑芳. "Preparation and Characterization of Mn-doped BaTiO3 Films By RF Sputtering." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/66584669291830520740.

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碩士<br>國立海洋大學<br>材料工程研究所<br>90<br>amorphous, as confirmed by XRD results, and started to crystallize at temperature of 600°C or above, depending the Mn content. The as-deposited films became generally refined as Mn content increased. Granular structures and clusters were seen in SEM micrographs of post-annealed films, and the clusters were larger and densed with increasing Mn contents. DSC results revealed that the activation energies for crystallization and cubic-to-hexagonal structure phase transformation are ~100 and ~500 kJ/mole, varying with the Mn content Effects of Mn have also been obse

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Tseng, Cheau-Huey, and 曾巧慧. "Property Modification of Tantalum Pentoxide Films Prepared by RF Magnetron Sputtering." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/77526101405549055661.

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碩士<br>國立交通大學<br>材料科學與工程研究所<br>86<br>Tantalum oxide (TaO1+x) films were prepared by radio frequency (RF) amgnetron sputtering method at different chamber opressure and Ar/O2 ratio. The film was then modified by a 800℃ heat treatment and microwave oxygen oplasma to transform to Ta2O5 The crystallinity, morphology and stoichiometric ratio of the films was investigated by x-ray diffraction, scanning electron microscope (SEM), atomic force microscope (AFM) and Auger electron spoectroscopy (AES), respectively. the electrical and optical properties of the films subjected to different treatment were a

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Han, Jia-wei, and 韓嘉緯. "Fabrication of Hydrogenated microcrystalline Silicon Thin Films Using RF Magnetron Sputtering." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/59024892200276454847.

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碩士<br>國立中央大學<br>光電科學研究所<br>95<br>Hydrogenated microcrystalline silicon (μc-Si:H ) thin films have attracted many attentions due to the high mobility compared with the amorphous silicon (a-Si) thin films. To fabricate μc-Si:H thin films plasma-enhance chemical vapor deposition (PECVD) is the most popular method. The disadvantages of PECVD are the high facility cost and using the toxic processing gases such as silane (SiH4). Whereas there is no these disadvantages using radio-frequency (RF) magnetron sputtering to deposit silicon thin films. Unfortunately, the silicon thin films deposited by the

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Yen, Po-Fu, and 顏伯甫. "Preparation and Characteristic of AlN Thin Film by RF Magnetron Sputtering." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/89860094719100628610.

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碩士<br>國立成功大學<br>材料科學(工程)研究所<br>83<br>The RF magnetron sputtering technique was employed in this study to obtain AlN thin films on silicon and glass substrat- es. The reaction atmosphere was a mixture of argon and nitr- ogen and the selected sputtering targets were either aluminum or AlN . By changing the RF power, the chamber pressure ,and the N2/Ar ratio , the aluminum nitride thin film that with C- axis preferred orientation was observed. This is believed to substantially benefit the fu

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Lee, Tsung-Yu, and 李宗裕. "PMT thin films deposited on Si wafers by RF-magnetron sputtering." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/20520310780858321065.

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Kuo, Yi-Nan, and 郭益男. "Photoluminescence Characteristics of ZnO Thin Films by Reactive RF Magnetron Sputtering." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/13778007541907436201.

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碩士<br>國立中山大學<br>電機工程學系研究所<br>92<br>In this study, the reactive rf magnetron sputtering was used to deposit zinc oxide (ZnO) thin films on Si substrate. The optimal sputtering parameters for film as luminescence application were found to be oxygen concentration (O2/O2+Ar) of 21%, RF power of 100W, substrate temperature of 500°C and sputtering pressure of 5 mtorr. Beside, the thermal treatment procedure was carried out to improve the luminescence characteristics of ZnO thin films. The physical characteristics of ZnO thin films deposited on Si substrate with different sputtering parameters we

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Chien, Wei-Lun, and 簡維倫. "Deposition of AlN films by RF magnetron sputtering for SAW application." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/65230696237394796950.

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碩士<br>大同大學<br>光電工程研究所<br>91<br>Aluminum Nitride (AlN) has excellent piezoelectric and optical properties, which made it a prime candidate for SAW and integrated optical applications. In this dissertation, the fabrication of AlN/SiO2/Si structure for SAW and optical waveguide applications is studied in detail. In SAW application, we deposited AlN thin film on p-type Silicon wafer with SiO2 Buffer layer by RF magnetron sputtering. In order to get the C-axis oriented aluminum nitride films by changing the rf power. sputtering pressure.N2 concentration and substrates temperature. Last w

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Wu, I.-Han, and 吳宜翰. "The Study of Titanium Oxide Thin Film Prepared by RF Sputtering." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/93gns7.

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碩士<br>國立高雄第一科技大學<br>光電工程研究所<br>96<br>This thesis is to study the characteristics of the Titanium Oxide thin films deposited on Silicon Wafer substrate by Radio Frequency magnetron sputtering using Ti target in plasma of Argon and Oxygen mixtures. The experimental parameters are including chamber pressure, oxygen flow ratio, annealing temperature and thickness of titanium layer. The effects of the processing parameters on the crystal structure, surface morphology, chemical composition and other characteristics of titanium oxide thin films were investigated by different oxygen flow ratios, thick

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Chan, Po-Chun, and 詹博鈞. "Synthesis of graphene on silicon substrate by RF magnetron sputtering process." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/7mtu6a.

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碩士<br>國立臺北科技大學<br>材料科學與工程研究所<br>102<br>Over the past decade, the characteristics of graphene with good electron mobility, excellent thermal conductivity, high electrical conductivity, a great surface area, and the optical penetration characteristics have been extensive researched. Currently, scientists have been able to synthesize single layer graphene by varieties techniques. However, it is still a big challenge to control the number of layers of graphene films. For the application of the semiconductor devices, it has to move graphene films to the substrate by transferring process and thus it

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曹侯焱. "RF magnetron sputtering preparation of MgO films for gate dielectric application." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/82646401529936473457.

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碩士<br>國立彰化師範大學<br>光電科技研究所<br>98<br>The MgO permittivity and leakage currents through Au(In)/MgO/n-type Si/In and Au(In)/MgO/p-type Si/Au structures were studied in the study. From the observed x-ray photoelectron spectroscopy,scanning electron microscopy, secondary ion mass spectrometry and ellipsometry results, it is suggested that MgSixOy formed at the MgO/Si interfaces may lead to enhancing the trapping/detrapping of charges, degrading the film capacitance characteristic. The electrical conduction investigations suggest that the leakage behavior is governed by the Schottky emission (Poole-

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Chou, Lin-I., and 周凌毅. "Investigation on transition silicon thin film using RF reactive sputtering process." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/02811678752389400202.

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碩士<br>國立中央大學<br>光電科學研究所<br>97<br>For mankind''s demand for the energy is greater and greater, it is necessary to develop renewable energies under limited resources. Solar energy plays an important role in the renewable energies, because it is inexhaustible. One of the most important components is hydrogenated silicon thin film solar cells. A lot of kinds of ideas for the solar cells have been proposed in recently. The commercial method to fabricate thin film solar cells is PECVD. However, the method has disadvantages such as high facility cost. In this research, a cheaper and without toxic met

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LIN, YING-ZHEN, and 林盈禎. "Crystallinity of ZnS:Tb, F thin film prepared by RF magnetron sputtering." Thesis, 1992. http://ndltd.ncl.edu.tw/handle/79494140152795875568.

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Wu, Bing-Kun, and 吳炳琨. "Bismuth Nanowire and Nanoparticle Grown Naturally Using an RF Sputtering System." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/36447664127619478422.

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博士<br>國立臺灣大學<br>物理研究所<br>101<br>Abstract We report the growth of Bismuth (Bi) nanowires and nanoparticles on glass substrates using a radio frequency (RF) sputtering system. The growth temperature and RF power were varied to study the growth mechanism of the nanowires or nanoparticles. The scanning electron microscope (SEM) / transmission electron microscope (TEM) images of the samples under various growth conditions were taken to reveal the morphologies of the Bi nanowires and films. We found that the optimal conditions for growing Bi nanowires were 120 ~ 160 ˚C, 0.5 W/cm2 (growth rate 40

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