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Journal articles on the topic 'RF sputtering'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Yokogawa, Yoshiyuki, Taishi Morishima, Mitunori Uno, et al. "Wettability and Durability of Si-O Coatings on Zirconia Substrate by RF-Magnetron Plasma Sputtering." Key Engineering Materials 782 (October 2018): 189–94. http://dx.doi.org/10.4028/www.scientific.net/kem.782.189.

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The wettability and durability of Si-O coatings prepared on zirconia substrate using radiofrequency magnetron sputtering (rf-sputtering) was studied. XRD analysis revealed no phase transformation of zirconia before/after rf-sputtering process. XPS spectroscopy showed that as-deposited films with a SiO2configuration was formed. EDX analysis indicated that the Si/Zr ratio was high and when magnetron rf-sputtering was performed using a plasma gas Ar+5% O2, which may be the optimum condition of rf-sputtering to form a sustainable hydrophilic layer on zirconia substrate. The wear testing using pin

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2

Park, Min Woo, Wang Woo Lee, Jae Gab Lee, and Chong Mu Lee. "A Comparison of the Mechanical Properties of RF- and DC- Sputter-Deposited Cr Thin Films." Materials Science Forum 546-549 (May 2007): 1695–98. http://dx.doi.org/10.4028/www.scientific.net/msf.546-549.1695.

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Chromium (Cr) films were deposited on plain carbon steel sheets by DC and RF magnetron sputtering as well as by electroplating. Effects of DC or RF sputtering power on the deposition rate and properties such as hardness and surface roughness of the Cr films were investigated. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microcopy (SEM) analyses were performed to investigate the crystal structure, surface roughness, thickness of the Cr films. The deposition rate, hardness and surface roughness of the Cr film deposited by either DC or RF sputtering increase with the

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3

Zhao, Haili, Jingpei Xie, and Aixia Mao. "Effects of Bottom Layer Sputtering Pressures and Annealing Temperatures on the Microstructures, Electrical and Optical Properties of Mo Bilayer Films Deposited by RF/DC Magnetron Sputtering." Applied Sciences 9, no. 7 (2019): 1395. http://dx.doi.org/10.3390/app9071395.

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Most of the molybdenum (Mo) bilayer films are deposited by direct current (DC) magnetron sputtering at the bottom and the top layer (DC/DC). However, the deposition of Mo bilayer film by radio frequency (RF) Mo bottom layer and DC Mo top layer magnetron sputtering has been less studied by researchers. In this paper, the bottom layer of Mo bilayer film was deposited by RF magnetron sputtering to maintain its good adhesion and high reflectance, and the top layer was deposited by DC magnetron sputtering to obtain good conductivity (RF/DC). Generally, the bottom layer sputtering pressure is relati

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4

Ma, Wei Hong, and Chang Long Cai. "Studying on Thickness Control of ITO Films Deposited Using RF Magnetron Sputtering." Advanced Materials Research 415-417 (December 2011): 1921–24. http://dx.doi.org/10.4028/www.scientific.net/amr.415-417.1921.

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Indium tin oxide (ITO) films are widely applied as the transparent electrode in the photoelectric device because of its high conductivity and high transmittance in the visible wavelength. But the resistivity and position of transmittance peak of ITO films were influenced by the thickness of ITO films, so it is important significant to study the deposition rate of ITO films deposited using RF magnetron sputtering. In this paper, ITO films were prepared by RF magnetron sputtering method on K9 glass substrate, the influence of RF power, sputtering pressure, oxygen ratio, and substrate temperature

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5

Jin, Chun Long, Ha Na Shim, Eou Sik Cho, and Sang Jik Kwon. "Effect of Pulsed-DC Power on the Zinc Oxide Window Layer of CIGS Solar Cells Deposited by In-Line Sputtering Methods." Advanced Materials Research 805-806 (September 2013): 131–35. http://dx.doi.org/10.4028/www.scientific.net/amr.805-806.131.

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Zinc oxide (ZnO) thin film was deposited on the glass substrate and cadmium-sulfide (CdS) thin film at room temperature by using an in-line pulsed-DC magnetron sputtering system. The sputtering process was carried out at various pulsed-DC power and radio frequency (RF) power from 400 W to 1 kW. From the thickness of the sputtered ZnO films, it was possible to obtain much higher deposition rate in case of pulsed-DC sputtering than RF sputtering. However, for both pulsed-DC sputtered and RF sputtered ZnO films, the similar results were obtained in case of the energy band gaps and the structural

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6

Biederman, H., P. Bílková, J. Ježek, P. Hlídek, and D. Slavínská. "RF magnetron sputtering of polymers." Journal of Non-Crystalline Solids 218 (September 1997): 44–49. http://dx.doi.org/10.1016/s0022-3093(97)00196-8.

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7

Stelmashuk, V., H. Biederman, D. Slavı́nská, M. Trchová, and P. Hlidek. "Rf magnetron sputtering of polypropylene." Vacuum 75, no. 3 (2004): 207–15. http://dx.doi.org/10.1016/j.vacuum.2004.02.007.

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8

Morohashi, Shin'ichi, Atsunori Matsuo, Toshihiro Hara, Shogo Tsujimura, and Masanori Kawanishi. "SiO2Insulation Layer Fabricated using RF Magnetron Facing Target Sputtering and Conventional RF Magnetron Sputtering." Japanese Journal of Applied Physics 40, Part 1, No. 8 (2001): 4876–77. http://dx.doi.org/10.1143/jjap.40.4876.

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9

Lee, Chong Mu, Choong Mo Kim, Sook Joo Kim, and Yun Kyu Park. "Enhancement of the Quality of the ZnO Thin Films by Optimizing the Process Parameters of High-Temperature RF Magnetron Sputtering." Key Engineering Materials 336-338 (April 2007): 581–84. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.581.

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ZnO thin films were deposited on sapphire (α-Al2O3) substrates by RF magnetron sputtering at substrate temperatures of 500, 600, 650 and 700°C for 3h at rf-powers ranging from 60 to 120 W. The FWHM of the XRD (0002) peak for the ZnO film was reduced down to 0.07° by optimizing the chamber pressure at a substrate temperature of 700°C. Sharp near-band-edge emission was observed in the photoluminescence (PL) spectrum for the ZnO film grown at room temperature. Excess RF power aggravates the crystallinity and the surface roughness of the ZnO thin film. Pole figure, AES and PL analysis results conf

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10

Watazu, Akira, Katsuhiko Kimoto, Sonoda Tsutomu, et al. "Ti-Ca-P Films Formed by RF Magnetron Sputtering Method Using Dual Targets." Materials Science Forum 544-545 (May 2007): 495–98. http://dx.doi.org/10.4028/www.scientific.net/msf.544-545.495.

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Ti-Ca-P films on commercial pure (cp) titanium plates were uniformly deposited using dual target RF magnetron sputtering apparatus with DC magnetron sputtering system under the conditions of 50 W DC power to a cp titanium target and 200 W RF power to a β-tricalcium phosphate (β-TCP) target for 60 min in 2.2×10-1 Pa Ar. Resulting samples had smooth surface like mirror. Crystal structure of the film was amorphous. The film had the chemical composition of about 3: 1.7: 1: 11 in Ti: Ca: P: O ratio under controlling the β-TCP target RF sputtering power and the titanium target DC sputtering power. T

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11

Mustapha, K.A. "Structural Characterization of RF-Sputtered CZTS Thin Films." International Journal of Advances in Scientific Research and Engineering (ijasre) 5, no. 9 (2019): 149–55. https://doi.org/10.31695/IJASRE.2019.33481.

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<em>Polycrystalline CZTS thin films of thickness 45nm, 90nm, 140nm and 180nm have been grown on the corning glass substrate by RF-magnetron sputtering at a substrate temperature of 100oC using a quaternary target. Structural characteristics of the grown thin films have been investigated using X-ray diffractometer (XRD). Detailed analysis of the XRD data has shown that the grown CZTS thin films have kesterite structure with preferred orientation along (112) plane which was observed to become stronger with an increase in film thickness, especially in the annealed samples. All the peaks observed

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12

Wen, Dong Cherng, Chun Yao Hsu, and Chun Yuan Wu. "Effect of Sputtering Parameters on Photocatalytic Activity of Anatase TiO₂ Films Deposited at Room Temperature." Advanced Materials Research 518-523 (May 2012): 724–27. http://dx.doi.org/10.4028/www.scientific.net/amr.518-523.724.

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We have successfully deposited anatase TiO2thin films at room temperature on polycarbonate substrates by RF magnetron sputtering. Four deposition parameters including RF power, sputtering pressure, argon/oxygen ratio and deposition time were employed to realize the photocatalytic activities of TiO2films. The orthogonal array and analysis of variance (ANOVA) were adopted to determine the performance of the deposition process. The RF power was found to be the major factor affecting the photocatalytic properties. An increase in RF power could be improved the deposition rate, contact angle, and MB

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13

Zhao, Zhenqian, Min Yu Yin, Sang Jik Kwon, and Eou-Sik Cho. "Effects of Radio-Frequency Sputtering Power on Low Temperature Formation of MoS2 Thin Films on Soda-Lime Glass Substrates." Journal of Nanoscience and Nanotechnology 20, no. 8 (2020): 4892–98. http://dx.doi.org/10.1166/jnn.2020.17849.

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For the realization of the economical and reliable fabrication process of molybdenum disulfide (MoS2) layers, MoS2 thin films were directly formed a on soda-lime glass substrate by RF sputtering and subsequent rapid thermal annealing (RTA) at a temperature range of 400–550 °C. Using scanning electron microscopy and atomic force microscopy, it was possible to investigate more stable surface morphologies of MoS2 layers at lower RF sputtering powers irrespective of the RTA temperature. Even at an RTA temperature of less than 550 °C, the Raman exhibited more distinct E12g and A1g peaks for the MoS

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14

Shah, Saad Saud Ali, Noor Ali, Zeeshan Habib, Sana Taimoor, Nasir Mehboob, and Fazal Ur Rehman. "Comparative Study of Zinc Sulfide Thin Films Fabricated by Spin Coating and Rf Magnetron Sputtering as a Buffer Layer for 2nd Generation Photovoltaics." Key Engineering Materials 992 (October 31, 2024): 41–50. http://dx.doi.org/10.4028/p-tn0qkf.

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To meet the requirements of second generation photovoltaics, spin coating and RF magnetron sputtering techniques have been utilized to fabricate zinc sulfide thin films for buffer layer optimization. During fabrication process, substrate temperatures for spin coating and RF magnetron sputtering processes are kept at room temperature and at 200 oC, respectively. Thin films are annealed at 500oC for 1 hour in an inert environment to acquire crystallinity and uniform surface morphology. XRD analysis reveals that thin films fabricated by spin coating and RF magnetron sputtering exhibit wurtzite an

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15

Ni, Zegang, Yuan Zhong, Xingfu Tao, Wei Li, Huifang Gao, and Yan Yao. "Effects of Radio Frequency Bias on the Structure Parameters and Mechanical Properties of Magnetron-Sputtered Nb Films." Crystals 12, no. 2 (2022): 256. http://dx.doi.org/10.3390/cryst12020256.

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Due to its highly unreactive nature and advanced biocompatibility, niobium (Nb) coating films are increasingly being used to improve the corrosion resistance and biocompatibility of base implant materials. However, Nb films have relatively low yield strengths and surface hardness; therefore, it is necessary to explore a simple and low-cost method to improve their mechanical properties. Magnetron sputtering is a commonly used tool for Nb film deposition. Applying substrate bias can introduce Ar+ bombard to the film surface, which is effective to improve the film’s mechanical properties. As the

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16

Xiu, Xian Wu, Li Xu, and Cheng Qiang Zhang. "Influence of Sputtering Power on Molybdenum-Doped Zinc Oxide Films Grown by RF Magnetron Sputtering." Advanced Materials Research 873 (December 2013): 426–30. http://dx.doi.org/10.4028/www.scientific.net/amr.873.426.

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Molybdenum-doped zinc oxide (MZO) films have been prepared by RF magnetron sputtering on glass substrates at room temperature. The structural, electrical and optical properties of the films vary with sputtering power from 15 W to 70 W are investigated. X-ray diffraction (XRD) analysis reveals that all the films are polycrystalline with the hexagonal structure and have a preferred orientation along thecaxis perpendicular to the substrate. The resistivity increases with the increase of the RF power. The lowest resistivity achieved is 5.4×10-3Ω cm at a RF power of 15 W with a Hall mobility of 11

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17

NOIKAEW, Busarin, Laksana WANGMOOKLANG, Saisamorn NIYOMSOAN, and Siriporn LARPKIATTAWORN. "Preparation of transparent alumina thin films deposited by RF magnetron sputtering." Journal of Metals, Materials and Minerals 31, no. 2 (2021): 96–103. http://dx.doi.org/10.55713/jmmm.v31i2.1066.

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Alumina (Al2O3) thin films were prepared by RF magnetron sputtering technique using Al2O3 ceramic target. Effects of sputtering powers and oxygen gas mixtures were investigated and the optimized coating condition was applied on semi-precious gemstones. RF sputtering powers were varied to optimize the transparency of the films. Besides, the oxygen gas mixtures were also studied at the optimized sputtering power with a constant sputtering pressure. Optical and physical properties of the thin films were investigated using UV-Vis Spectrophotometer, FESEM, XRF, GIXRD, XRR including a microscratch t

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18

Liu, Jiaqi, Kazuya Tajima, Imane Abdellaoui, Muhammad Monirul Islam, Shigeru Ikeda, and Takeaki Sakurai. "Effect of Radio-Frequency Power on the Composition of BiVO4 Thin-Film Photoanodes Sputtered from a Single Target." Energies 14, no. 8 (2021): 2122. http://dx.doi.org/10.3390/en14082122.

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BiVO4 films were fabricated by radio frequency (RF) sputtering from a single target. The deposited BiVO4 films were found to be rich in Bi, and the reason for the Bi-richness was investigated. It was inferred from the Monte Carlo simulation that, during sputtering, the transfer process of target atoms through argon gas played a major role in this phenomenon. The transfer process resulted in an imbalanced ratio of Bi and V, arising from the difference in atom mass and interaction radius. The high RF power was found to be effective in adjusting the Bi/V ratio, influencing the sputtering yield. T

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19

Huguenin-Love, James, Noel T. Lauer, Rodney J. Soukup, Ned J. Ianno, Štepan Kment, and Zdenek Hubička. "The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode." Materials Science Forum 645-648 (April 2010): 131–34. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.131.

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Thin films of SiC have been deposited using a hollow cathode sputtering technique. Several methods have been used including DC, RF, and pulsed sputtering. The films reported here have been deposited using DC and pulsed sputtering.

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20

Khalaf, Mohammed K. "Effect of sputtering power on optical Properties of RF sputtering deposited Ti6Al4V Thin Films." Iraqi Journal of Physics (IJP) 15, no. 33 (2019): 71–77. http://dx.doi.org/10.30723/ijp.v15i33.142.

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Ti6Al4V thin film was prepared on glass substrate by RFsputtering method. The effect of RF power on the optical propertiesof the thin films has been investigated using UV-visibleSpectrophotometer. It's found that the absorbance and the extinctioncoefficient (k) for deposited thin films increase with increasingapplied power, while another parameters such as dielectric constantand refractive index decrease with increasing RF power.

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21

Fribourg-Blanc, E., E. Cattan, D. Remiens, M. Dupont, and D. Osmont. "rf-sputtering of PMNT thin films." Le Journal de Physique IV 11, PR11 (2001): Pr11–145—Pr11–149. http://dx.doi.org/10.1051/jp4:20011123.

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22

Koenig, H. R., and L. I. Maissel. "Application of rf discharges to sputtering." IBM Journal of Research and Development 44, no. 1.2 (2000): 106–10. http://dx.doi.org/10.1147/rd.441.0106.

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23

Nomura, Ichirou, Takayuki Miyazaki, and Takeo Nishimura. "Novel method in rf bias sputtering." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 39, no. 1-4 (1989): 99–103. http://dx.doi.org/10.1016/0168-583x(89)90749-0.

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24

Yao, Yan Ping, and Bao Xue Bo. "Composition Study of Amorphous In_xAs_1-x Films Prepared by Radio-Frequency Sputtering." Applied Mechanics and Materials 568-570 (June 2014): 1653–57. http://dx.doi.org/10.4028/www.scientific.net/amm.568-570.1653.

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Amorphous InAs films are deposited on substrates of quartz glass by RF magnetron sputtering technique in different gas ambient. We present a systematic study of the affects of the sputtering parameters on the chemical composition. Amorphous InAs (a-InAs) films have been achieved at higher working pressure when the substrate temperature and RF power are increased respectively. The films composition is controlled by transport phenomena of sputtered atoms from the target to the substrate and by substrate surface dynamics. We study how to improve the sputtering parameters in order to obtain stoich

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25

Xu, Li Hai, Yu Xing Xu, Cong Wang, and Tian Min Wang. "Preparation and Properties of Ce_0.9Sm_0.1O_1.95 as the Electrolytes of IT-SOFC." Key Engineering Materials 336-338 (April 2007): 398–400. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.398.

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Sm0.1Ce0.9O1.95 (SDC) films, as promising electrolyte materials, have been successfully prepared on Al2O3 ceramic substrates by RF magnetron sputtering growth. The relationship between sputtering parameters and film microstructure was discussed. Scanning electron microscopy (SEM) and x-ray diffraction (XRD) were used to characterize the morphology and crystal structure of the SDC films. The SEM images show that the crystallinity becomes better and better with the increase of sputtering power from 100W to 300W. X-ray diffraction patterns indicate that the thin SDC electrolyte film on the Al2O3

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26

Tumanov, N. A., D. V. Kirillov, and E. V. Vorob’ev. "Investigation of a high-frequency magnetron sputtering system operation modes during copper thin films deposition." Journal of Physics: Conference Series 2270, no. 1 (2022): 012055. http://dx.doi.org/10.1088/1742-6596/2270/1/012055.

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Abstract The results of studying the radio frequency (RF) magnetron sputtering (MS) operation parameters during copper sputtering are presented. A comparison of the growth rate dependence on power during the operation of MS is made in RF and DC modes. The pressure dependences of the RFMS growth rate and bias target voltage are obtained. The prospect of using RFMS for deposition of smooth coatings is shown.

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27

Hwang, Shun Fa, and Wen Bin Li. "PZT Thin Films Deposited by RF Magnetron Sputtering." Applied Mechanics and Materials 302 (February 2013): 8–13. http://dx.doi.org/10.4028/www.scientific.net/amm.302.8.

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PZT thin film was fabricated by using RF-sputtering process, and platinum was used as bottom electrodes. The sputtering gases were Ar：O2＝25：0 sccm, Ar：O2＝20：5 sccm, or Ar：O2＝15：10 sccm. After sputtering, the PZT film was annealed for 5 minutes under O2 gas environment and at the temperature of 600 0C, 650 0C, 700 0C or 750 0C. To judge the quality of the deposited PZT film, its physical properties and electric properties were evaluated. The results indicate that the best crystallization temperature of PZT thin film is about 700 0C. Also, the roughness of the PZT thin film becomes larger with t

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28

LI, WENHAO. "SYNTHESIS OF CUPROUS OXIDE THIN FILMS BY RF-MAGNETRON SPUTTERING." Surface Review and Letters 25, no. 02 (2018): 1850051. http://dx.doi.org/10.1142/s0218625x18500518.

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Cuprous oxide (Cu2O) thin films were produced from metallic Cu targets on [Formula: see text]-Al2O3 (000[Formula: see text]) substrate by radio frequency magnetron sputtering technology. Three batches of samples were deposited under various sputtering parameters by modulating substrate temperature, gas flow and sputtering power, respectively. The samples were characterized by X-ray diffraction and field-emission scanning electron microscopy. Through the experiment, the influences of the sputtering conditions were systematically investigated. It could be inferred that the crystallization extent

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29

Yu, Jie, Wen Hui Ma, Hang Sheng Lin, Hong Yan Sun, Xiu Hua Chen, and Bin Yang. "Fabrication of LSGM Thin Film Electrolyte on LSCM Anode by RF Magnetron Sputtering for IT-SOFC." Materials Science Forum 675-677 (February 2011): 81–84. http://dx.doi.org/10.4028/www.scientific.net/msf.675-677.81.

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La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) thin film electrolytes were fabricated on La0.7Sr0.3Cr0.5Mn0.5O3-δ (LSCM) porous anodes by radio-frequency (RF) magnetron sputtering. The formation and microstructure of LSGM thin films were characterized by X-ray diffraction(XRD) and scanning electron microscopy (SEM). The effects of different sputtering conditions, such as Ar gas pressure, substrate temperature and sputtering power, on the performance of LSGM electrolyte film were estimated. Dense LSGM thin film electrolytes with thickness of about 2μm, which are compatible with LSCM-based anodes and without c

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30

Achoi, M. F., Mohd Nor Asiah, Mohamad Rusop, and Saifollah Abdullah. "A Comparative Study of TiO₂ Nanocoated Mild Steel Surface Properties between Short and Long Sputtering Time of RF Magnetron." Advanced Materials Research 667 (March 2013): 562–68. http://dx.doi.org/10.4028/www.scientific.net/amr.667.562.

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TiO2 nanocoated mild steel surface has been successfully prepared via 100 watt of RF magnetron sputtering by using TiO2 target and sputtering condition was performed in 80sccm argon gas. The studied was done in comparing the surface properties of TiO2 nanocoated mild steel between short term and long term sputtering time at 5 and 60 minutes, respectively. From the results, we have found that the long-term sputtering time producing good surface coating with lower surface roughness at 0.033 nm with thickness in nanometer scale is 169 nm via AFM. Through Auger study revealed that the coating attr

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31

Lin, Qijing, Zelin Wang, Qingzhi Meng, Qi Mao, Dan Xian, and Bian Tian. "A Co-Sputtering Process Optimization for the Preparation of FeGaB Alloy Magnetostrictive Thin Films." Nanomaterials 13, no. 22 (2023): 2948. http://dx.doi.org/10.3390/nano13222948.

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A co-sputtering process for the deposition of Fe0.8Ga0.2B alloy magnetostrictive thin films is studied in this paper. The soft magnetic performance of Fe0.8Ga0.2B thin films is modulated by the direct-current (DC) sputtering power of an FeGa target and the radio-frequency (RF) sputtering power of a B target. Characterization results show that the prepared Fe0.8Ga0.2B films are amorphous with uniform thickness and low coercivity. With increasing FeGa DC sputtering power, coercivity raises, resulting from the enhancement of magnetism and grain growth. On the other hand, when the RF sputtering po

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32

da Cunha, António F., F. Kurdzesau, and Pedro M. P. Salomé. "Cu(In,Ga)Se₂ Prepared by a 2 and 3-Stage Hybrid RF-Magnetron Sputtering and Se Evaporation Method: Properties and Solar Cell Performance." Materials Science Forum 514-516 (May 2006): 93–97. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.93.

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The potential of RF-magnetron sputtering to achieve high quality Cu(In,Ga)Se2 (CIGS) thin films and efficient solar cells with the goal of using a single technique for all solar cell processing steps is explored. The end point detection method was adapted to RF-magnetron deposition of CIGS in two- or three stages sputtering process. It allows the control of the final composition of the deposited layers in a reproducible way. The influence of substrate temperature and Ar pressure during the deposition on the surface and crossectional morphology of CIGS films was studied for two and three-stage

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33

Phelps, Justin Ryan, Ashwin Kumar Saikumar, Reza Abdolvand, and Kalpathy B. Sundaram. "Comparison of RF and High Impulse Magnetron Sputtered Gallium-Doped Zinc Oxide Thin Films." Coatings 13, no. 1 (2022): 71. http://dx.doi.org/10.3390/coatings13010071.

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For the first time in the literature, the material properties of gallium-doped zinc oxide, grown from a high impulse magnetron sputtering system (HiPIMS), are reported. These material properties are compared to those of a typical radio frequency (RF) sputtering deposition. The films were grown without thermal assistance and were compared across multiple average deposition powers. The films’ resistivity, crystallinity, absorption coefficient, band gap, and refractive index were measured for each of the samples. It was observed that very similar results could be obtained between the HiPIMS and R

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34

Othman, Nur Afiqah, Nafarizal Nayan, Mohd Kamarulzaki Mustafa, et al. "Effects of radio-frequency power on structural properties and morphology of AlGaN thin film prepared by co-sputtering technique." ELEKTRIKA- Journal of Electrical Engineering 20, no. 2 (2021): 14–18. http://dx.doi.org/10.11113/elektrika.v20n2.270.

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To date, the deposition of AlGaN thin film using the co-sputtering technique at room temperature has not been reported yet. The use of AlGaN for electronic devices has been widely known because of its ultra-wide bandgap. However, to deposit the AlGaN thin film and achieved high quality of AlGaN films, higher temperature or extra time deposition are needed, which is not compatible with industrial fabrication process. Here, a co-sputtering technique between two power supplies of magnetron sputtering (which are RF and HiPIMS) is introduced to deposit the AlGaN thin films. The AlGaN thin films wer

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35

Shin, Kyoung Chul, Jong Min Lim, and Chong Mu Lee. "Dual Ion Beam Sputtering for Chromium Nitride as an Alternative to Electroplated Hexavalent Chromium." Materials Science Forum 486-487 (June 2005): 301–4. http://dx.doi.org/10.4028/www.scientific.net/msf.486-487.301.

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The hexavalent chromium used in chromium plating is so toxic that it is very hazardous to human body and even carcinogenic. Therefore, it is indispensable to develop an alternative deposition technique. To explore the feasibility of sputtering as an alternative technique for chromium plating, we investigated the dependences of the deposition rate, the phases, the hardness, the surface roughness and the corrosion-resistance of CrNx deposited on the high speed steel substrate by using a dual ion beam sputtering system on the rf-powers. The deposition rate of CrNx depends more strongly upon the r

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36

Liu, Jun, Zhi Gang Chen, Kai Bi, and Yue Min Wang. "Evaluation on Structure and Tribological Properties of Carbon Nitride Films Deposited on YG8 Carbide Alloy Substrates." Key Engineering Materials 492 (September 2011): 80–84. http://dx.doi.org/10.4028/www.scientific.net/kem.492.80.

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CNx films were deposited on YG8 carbide alloy (WC+8%Co) substrates by DC or RF magnetron sputtering. The composition, bonding state, adhesion, and tribological behavior of CNx films were researched. X-ray Photoelectron spectroscopy results showed that C-N, C=N and C≡N bond existed in CNx films. RF magnetron sputtering is in favor of the bonding of C and N, the adhesion and the wear resistance of CNx films. DC magnetron sputtering is in favor of lubricating ability of CNx films. Substrate bias has some effect on the bonding of C and N, the adhesion of the films, decrease of adhesive wear and th

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ALI, Dawood S., and Omar M. DAWOOD. "SPECTROSCOPIC STUDY OF RF MAGNETRON SPUTTERING PLASMA FOR DEPOSITION TI6AL4V THIN FILM." MINAR International Journal of Applied Sciences and Technology 03, no. 03 (2021): 103–10. http://dx.doi.org/10.47832/2717-8234.3-3.13.

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In this work, RF magnetron sputtering plasma for the deposition of Ti6Al4V thin film has been investigated by using optical emission spectroscopy at argon working pressure of 5×10-3 mbar. The emission lines intensity of the plasma were measured using a spectrometer, and the identify peaks within the selective range of patterns and matched with the standard data from the NIST website to measure the plasma parameters. Since the sputtering power plays an important role to the growth of thin film, so the effect of sputtering power of 50, 75, 100, 125 and 150Watt has been studied on produced plasma

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Yang, Tim, Z. Q. Wang, Makoto Kohda, Takeshi Seki, Koki Takanashi, and Junsaku Nitta. "Perpendicular Magnetic Anisotropy in Pt/Co/AlO Trilayer Structures Depending on AlO Thickness and Fabrication Method." Key Engineering Materials 616 (June 2014): 247–51. http://dx.doi.org/10.4028/www.scientific.net/kem.616.247.

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We investigate the perpendicular magnetic anisotropy dependence on the AlO capping layer in Pt/Co/AlO films. AlO was deposited on Pt/Co films by RF magnetron sputtering and atomic layer deposition (ALD) with varying thickness. It is found that the prolonged deposition of thick AlO layers by RF magnetron sputtering causes significant damage to the Pt/Co underneath while AlO layers formed by ALD can be of arbitrary thickness with no damage to the magnetic properties of the films. The decline of the magnetic properties can be attributed to the method of AlO deposition for each process. In the RF

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Son, Chang Sik, Jae Sung Hur, Byoung Hoon Lee, et al. "Multi-Component ZnO-In₂O₃-SnO₂Thin Films Deposited by RF Magnetron Co-Sputtering." Solid State Phenomena 124-126 (June 2007): 119–22. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.119.

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Multi-component ZnO-In2O3-SnO2 thin films have been prepared by RF magnetron co-sputtering using targets composed of In4Sn3O12(99.99%) [1] and ZnO(99.99%) at room temperature. In4Sn3O12 contains less In than commercial ITO, so that it lowers cost. Working pressure was held at 3 mtorr flowing Ar gas 20 sccm and sputtering time was 30 min. RF power ratio [RF1 / ( RF1 + RF2 )] of two guns in sputtering system was varied from 0 to 1. Each RF power was varied 0~100W respectively. The thicknesses of the films were 350~650nm. The composition concentrations of the each film were measured with EPMA and

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Gajdics, Marcell, Miklós Serényi, Tamás Kolonits, Attila Sulyok, Zsolt Endre Horváth, and Béla Pécz. "Reactive Sputter Deposition of Ga2O3 Thin Films Using Liquid Ga Target." Coatings 13, no. 9 (2023): 1550. http://dx.doi.org/10.3390/coatings13091550.

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Ga2O3 is a promising material in the optoelectronics and semiconductor industry. In this work, gallium oxide thin films were deposited via radio frequency (RF) sputtering, using a liquid Ga target. The reactive sputtering was carried out using different oxygen flow rates and DC target potentials induced via the RF power. The thickness of the samples varied between 160 nm and 460 nm, depending on the preparation conditions. The composition and the refractive index of the layers were investigated via energy-dispersive spectroscopy, X-ray photoelectron spectroscopy, and spectroscopic ellipsometry

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Homma, Yoshio, and Sukeyoshi Tsunekawa. "Planar Deposition of Aluminum by RF/DC Sputtering with RF Bias." Journal of The Electrochemical Society 132, no. 6 (1985): 1466–72. http://dx.doi.org/10.1149/1.2114145.

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Jeon, Yong-Su, Yeo-Chun Yun, and Seong-Su Kim. "Microstructure and Electrical Properties of In2O3Thin Films Fabricated by RF Magnetron Sputtering." Korean Journal of Materials Research 12, no. 4 (2002): 290–95. http://dx.doi.org/10.3740/mrsk.2002.12.4.290.

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Kawato, Yuto, Taisei Motomura, Tatsuo Tabaru, Masato Uehara, and Tetsuya Okuyama. "Effect of RF power on AlN film crystallinity in low pressure range using Ar-20%N₂ gases by magnetic mirror-type magnetron cathode." Japanese Journal of Applied Physics 61, no. 4 (2022): 046001. http://dx.doi.org/10.35848/1347-4065/ac4f96.

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Abstract Effect of radio frequency (RF) power on aluminum nitride (AlN) film crystallinity has been studied under low gas pressure of ≥ 0.1 Pa and low RF power of ≥ 3 W with Ar-20%N2 gas by a proposed balanced magnetron cathode with a high plasma production efficiency. The gas pressure and the RF power dependences of AlN film crystallinity show that the c-axis oriented AlN films can be obtained only at 50 W and 100 W in 0.1 Pa. The AlN film crystallinity was not promoted in the low RF power range of <50 W. An Ar-rich sputtering condition at 0.1 Pa induced the Al–Al bonds in the deposited fi

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Qiao, Hu, Minghui Liu, Ying Xiang, et al. "Low-Friction Coatings Grown on Cemented Carbides by Modulating the Sputtering Process Parameters of TiN Targets." Coatings 15, no. 3 (2025): 329. https://doi.org/10.3390/coatings15030329.

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TiN thin films are widely used as protective and decorative coatings for tools in industry. Previous studies have focused on the deposition of TiN coatings on substrates by reactive magnetron sputtering, whereas the use of TiN targets avoids problems such as ‘nitrogen contamination’ and ‘target poisoning’. TiN coatings were grown on silicon wafers and cemented carbide substrates by varying the parameters of the magnetron sputtering plasma source, operating Ar pressure and deposition temperature. The experimental results show the better mechanical properties of ceramic materials deposited using

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45

Shafiekhani, Azizollah, and Senour Abdolghaderi. "Effect of deposition time on structure of silver nanoparticles embedded in diamond-like carbon matrix made by RF-PECVD method." Iranian Journal of Physics Research 14, no. 4 (2015): 225–29. https://doi.org/10.5281/zenodo.3977459.

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Silver nanoparticles embedded in DLC matrix, were prepared by co-deposition of RF-Sputtering and RF-PECVD method from acetylene gas and sliver target. The RF power and initial pressure of chamber were fixed. Variations of morphology, optical and electrical properties of these films over time were investigated.

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Zhou, Zhen, and Jing He. "Study on Crystallinity and Magnetic Properties of NiCuZn Ferrite Films Deposited by RF Sputtering." Journal of Physics: Conference Series 2706, no. 1 (2024): 012070. http://dx.doi.org/10.1088/1742-6596/2706/1/012070.

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Abstract Nickel-zinc ferrite proves to be the top-performing material in terms of soft magnetic features for high-frequency applications. The purpose of this study is to explore the impact of various factors such as sputtering pressure, substrate temperature, sputtering power, and sputtering gas, on the magnetic and structural properties of NiCuZn ferrite thin films. In this research, radio-frequency magnetron sputtering of NiCuZn ferrite thin films on silicon substrates was used to investigate the matter. The study demonstrates that reducing sputtering pressure enhances the crystallization of

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Park, Sang-Shik. "Preparation and Electrical Properties of BiFeO3Films by RF Magnetron Sputtering." Korean Journal of Materials Research 19, no. 5 (2009): 253–58. http://dx.doi.org/10.3740/mrsk.2009.19.5.253.

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Jeong, Woon-Jo. "A Study on the Deposition of Hydroxyapatite Nano Thin Films Fabricated by Radio-Frequency Magnetron Sputtering for Biomedical Applications." Journal of Nanoscience and Nanotechnology 20, no. 7 (2020): 4114–19. http://dx.doi.org/10.1166/jnn.2020.17582.

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We have developed a HA nano-coating technology suitable for dental and orthopedic implants using RF magnetron sputtering method which can achieve excellent adhesion to titanium compared with other various PVD coating technologies. As a result, the HA thin film prepared by RF magnetron sputtering has a thickness of about 1.6 [μm] and its adhesion force to base metal is about 11.93 [N] or more and Ca/P ratio is about 1.64, which is suitable for dental and orthopedic implants.

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Li, Shuang, Feng Xiang Wang, Gang Fu, Yan Ju Ji, and Jun Qing Zhao. "Investigation of Optical Properties of ZnO Films Deposited by RF Magnetron Sputtering." Materials Science Forum 663-665 (November 2010): 215–18. http://dx.doi.org/10.4028/www.scientific.net/msf.663-665.215.

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ZnO thin films with a strong c-axis orientation have been successfully deposited on quartz glass substrates at room temperature by radio frequency (rf) magnetron sputtering technology. X-ray diffraction, Rutherford backscattering, and prism coupling method were used to investigate the structure and optical properties of ZnO thin films. X-ray diffraction results shown lower sputtering pressure is propitious to increasing the crystallinity, and enhancing the c-axis orientation of the films. Rutherford backscattering analysis revealed that the films were stoichiometric ZnO, and as the sputtering

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50

Subbarayudu, S., K. Venkata Subba Reddy, and S. Uthanna. "Sputtering pressure influenced structural, electrical and optical properties of RF magnetron sputtered MoO3 films." Materials Science-Poland 38, no. 1 (2020): 41–47. http://dx.doi.org/10.2478/msp-2020-0001.

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AbstractMoO3 films were deposited by RF magnetron sputtering technique on glass and silicon substrates held at 473 K by sputtering of metallic molybdenum target at an oxygen partial pressure of 4 × 10−2 Pa and at different sputtering pressures in the range of 2 Pa to 6 Pa. The influence of sputtering pressure on the structure and surface morphology, electrical and optical properties of the MoO3 thin films was studied. X-ray diffraction studies suggest that the films deposited at a sputtering pressure of 2 Pa were polycrystalline in nature with mixed phase of α- and β-phase MoO3, while those fo

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