Relevant bibliographies by topics / RHBD

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'RHBD'

Author: Grafiati
Published: 4 June 2021
Last updated: 5 February 2022

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Journal articles on the topic "RHBD"

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Feng, Z., B. Jiang, J. Chandra, M. Ghannoum, S. Nelson, and A. Weinberg. "Human Beta-defensins: Differential Activity against Candidal Species and Regulation by Candida albicans." Journal of Dental Research 84, no. 5 (May 2005): 445–50. http://dx.doi.org/10.1177/154405910508400509.

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Oral epithelial cell-derived human beta-defensins-1, -2, and -3 participate in innate immune responses against Candida. We hypothesized that these peptides utilize several mechanisms for protection. Recombinant hBD-1 and -2 were produced with the use of an insect cell/baculovirus expression system, while rhBD-3 was expressed as a fusion protein in E. coli. RhBD-2 and -3 were more effective at killing the candidal species at low micromolar concentrations than was rhBD-1, except for C. glabrata. While this species was relatively resistant to rhBD fungicidal activity, its adherence to oral epithelial cells was strain-specifically inhibited by the rhBDs. C. albicans hyphae were important in regulating hBD2 and -3 mRNA expression in primary human oral epithelial cells. Confocal microscopy of rhBD-2-challenged C. albicans suggests disruption of the fungal membrane. Results support the hypothesis that hBDs control fungal colonization through hyphal induction, direct fungicidal activity, and inhibition of candidal adherence.
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Hamed, Ehab A., and Inhee Lee. "Categorization and SEU Fault Simulations of Radiation-Hardened-by-Design Flip-Flops." Electronics 10, no. 13 (June 30, 2021): 1572. http://dx.doi.org/10.3390/electronics10131572.

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In the previous three decades, many Radiation-Hardened-by-Design (RHBD) Flip-Flops (FFs) have been designed and improved to be immune to Single Event Upsets (SEUs). Their specifications are enhanced regarding soft error tolerance, area overhead, power consumption, and delay. In this review, previously presented RHBD FFs are classified into three categories with an overview of each category. Six well-known RHBD FFs architectures are simulated using a 180 nm CMOS process to show a fair comparison between them while the conventional Transmission Gate Flip-Flop (TGFF) is used as a reference design for this comparison. The results of the comparison are analyzed to give some important highlights about each design.
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Shuler, Robert L. "Porting and Scaling Strategies for Nanoscale CMOS RHBD." IEEE Transactions on Circuits and Systems I: Regular Papers 62, no. 12 (December 2015): 2856–63. http://dx.doi.org/10.1109/tcsi.2015.2495779.

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Cannon, Ethan H., Joe Tostenrude, Manuel Cabanas-Holmen, Barry Meaker, Charles Neathery, Mike Carson, and Roger Brees. "At-Speed SEE Testing of RHBD Embedded SRAMs." IEEE Transactions on Nuclear Science 60, no. 6 (December 2013): 4207–13. http://dx.doi.org/10.1109/tns.2013.2288307.

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Sarker, Md Arifur R., Seungwoo Jung, Adrian Ildefonso, Ani Khachatrian, Stephen P. Buchner, Dale McMorrow, Pauline Paki, John D. Cressler, and Ickhyun Song. "Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits." Sensors 20, no. 9 (May 1, 2020): 2581. http://dx.doi.org/10.3390/s20092581.

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It has been known that negative feedback loops (internal and external) in a SiGe heterojunction bipolar transistors (HBT) DC current mirrors improve single-event transient (SET) response; both the peak transient current and the settling time significantly decrease. In the present work, we demonstrate how radiation hardening by design (RHBD) techniques utilized in DC bias blocks only (current mirrors) can also improve the SET response in AC signal paths of switching circuits (e.g., current-mode logic, CML) without any additional hardening in those AC signal paths. Four CML circuits both with and without RHBD current mirrors were fabricated in 130 nm SiGe HBT technology. Two existing RHBD techniques were employed separately in the current mirrors of the CML circuits: (1) applying internal negative feedback and (2) adding a large capacitor in a sensitive node. In addition, these methods are also combined to analyze the overall SET performance. The single-event transients of the fabricated circuits were captured under the two-photon-absorption laser-induced single-event environment. The measurement data clearly show significant improvements in SET response in the AC signal paths of the CML circuits by using the two radiation hardening techniques applied only in DC current mirrors. The peak output transient current is notably reduced, and the settling time upon a laser strike is shortened significantly.
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Blaine, R. W., S. E. Armstrong, J. S. Kauppila, N. M. Atkinson, B. D. Olson, W. T. Holman, and L. W. Massengill. "RHBD Bias Circuits Utilizing Sensitive Node Active Charge Cancellation." IEEE Transactions on Nuclear Science 58, no. 6 (December 2011): 3060–66. http://dx.doi.org/10.1109/tns.2011.2171365.

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Bals, Robert, Christiane Lang, Daniel J. Weiner, Claus Vogelmeier, Ulrich Welsch, and James M. Wilson. "Rhesus Monkey (Macaca mulatta) Mucosal Antimicrobial Peptides Are Close Homologues of Human Molecules." Clinical Diagnostic Laboratory Immunology 8, no. 2 (March 1, 2001): 370–75. http://dx.doi.org/10.1128/cdli.8.2.370-375.2001.

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ABSTRACT One component of host defense at mucosal surfaces appears to be epithelium-derived antimicrobial peptides. Molecules of the defensin and cathelicidin families have been studied in several species, including human and mouse. We describe in this report the identification and characterization of rhesus monkey homologues of human mucosal antimicrobial peptides. Using reverse transcriptase PCR methodology, we cloned the cDNAs of rhesus monkey β-defensin 1 and 2 (rhBD-1 and rhBD-2) and rhesus monkey LL-37/CAP-18 (rhLL-37/rhCAP-18). The predicted amino acid sequences showed a high degree of homology to the human molecules. The expression of the monkey antimicrobial peptides was analyzed using immunohistochemistry with three polyclonal antibodies to the human molecules. As in humans, rhesus monkey antimicrobial peptides are expressed in epithelia of various organs. The present study demonstrates that β-defensins and cathelicidins of rhesus monkeys are close homologues to the human molecules and indicate that nonhuman primates represent valid model organisms to study innate immune functions.
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Ren, Yi, Li Chen, and Jinshun Bi. "An RHBD Bandgap Reference Utilizing Single Event Transient Isolation Technique." IEEE Transactions on Nuclear Science 63, no. 3 (June 2016): 1927–33. http://dx.doi.org/10.1109/tns.2016.2554104.

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Han, Zhiwei, Liang Wang, Suge Yue, Bing Han, and Shougang Du. "Analysis and RHBD technique of single event transients in PLLs." Journal of Semiconductors 36, no. 11 (November 2015): 115001. http://dx.doi.org/10.1088/1674-4926/36/11/115001.

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Díez-Acereda, V., Sunil L. Khemchandani, J. del Pino, and S. Mateos-Angulo. "RHBD Techniques to Mitigate SEU and SET in CMOS Frequency Synthesizers." Electronics 8, no. 6 (June 19, 2019): 690. http://dx.doi.org/10.3390/electronics8060690.

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This paper presents a thorough study of radiation effects on a frequency synthesizer designed in a 0.18 μ m CMOS technology. In CMOS devices, the effect of a high energy particle impact can be modeled by a current pulse connected to the drain of the transistors. The effects of SET (single event transient) and SEU (single event upset) were analyzed connecting current pulses to the drains of all the transistors and analyzing the amplitude variations and phase shifts obtained at the output nodes. Following this procedure, the most sensitive circuits were detected. This paper proposes a combination of radiation hardening-by-design techniques (RHBD) such as resistor–capacitor (RC) filtering or local circuit-redundancy to mitigate the effects of radiation. The proposed modifications make the frequency synthesizer more robust against radiation.
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Dissertations / Theses on the topic "RHBD"

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Uznanski, Slawosz. "Monte-Carlo simulation and contribution to understanding of Single-Event-Upset (SEU) mechanisms in CMOS technologies down to 20nm technological node." Thesis, Aix-Marseille 1, 2011. http://www.theses.fr/2011AIX10222/document.

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L’augmentation de la densité et la réduction de la tension d’alimentation des circuits intégrés rend la contribution des effets singuliers induits par les radiations majoritaire dans la diminution de la fiabilité des composants électroniques aussi bien dans l’environnement radiatif spatial que terrestre. Cette étude porte sur la modélisation des mécanismes physiques qui conduisent à ces aléas logiques (en anglais "Soft Errors"). Ces modèles sont utilisés dans une plateforme de simulation,appelée TIARA (Tool suIte for rAdiation Reliability Assessment), qui a été développée dans le cadre de cette thèse. Cet outil est capable de prédire la sensibilité de nombreuses architectures de circuits (SRAM,Flip-Flop, etc.) dans différents environnements radiatifs et sous différentes conditions de test (alimentation, altitude, etc.) Cette plateforme a été amplement validée grâce à la comparaison avec des mesures expérimentales effectuées sur différents circuits de test fabriqués par STMicroelectronics. La plateforme TIARA a ensuite été utilisée pour la conception de circuits durcis aux radiations et a permis de participer à la compréhension des mécanismes des aléas logiques jusqu’au noeud technologique 20nm
Aggressive integrated circuit density increase and power supply scaling have propelled Single Event Effects to the forefront of reliability concerns in ground-based and space-bound electronic systems. This study focuses on modeling of Single Event physical phenomena. To enable performing reliability assessment, a complete simulation platform named Tool suIte for rAdiation Reliability Assessment (TIARA) has been developed that allows performing sensitivity prediction of different digital circuits (SRAM, Flip-Flops, etc.) in different radiation environments and at different operating conditions (power supply voltage,altitude, etc.) TIARA has been extensively validated with experimental data for space and terrestrial radiation environments using different test vehicles manufactured by STMicroelectronics. Finally, the platform has been used during rad-hard digital circuits design and to provide insights into radiation-induced upset mechanisms down to CMOS 20nm technological node
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Walldén, Johan. "Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques." Thesis, Linköpings universitet, Elektroniska komponenter, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-109343.

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The aim with this thesis has been to make a survey of radiation hardened electronics, explaining why and how radiation affects electronics and what can be done to harden it. The effects radiation have on electronics in general and in specific commonly used devices are explained qualitatively. The effects are divided into Displacement Damage (DD), Total Ionizing Dose (TID) and Single Event Effects (SEEs). The devices explained are MOSFETs, Silicon On Insulator (SOI) transistors, 3D-transistors, Power transistors, Optocouplers, Field Programmable Gate Arrays (FPGAs), three dimensional circuits (3D-ICs) and Flash memories. Different radiation hardening by design (RHBD) techniques used to reduce or to remove the negative effects radiation induces in electronics are also explained. The techniques are Annular transistors, Enclosed source/drain transistors, Guard rings, Triple Modular Redundancy (TMR), Dual Interlocked Storage Cells (DICE), Guard gates, Temporal filtering,Multiple drive, Charge dissipation, Differential Charge Cancellation (DCC), Scrubbing, Lockstep, EDAC codes and Watchdog timers.
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Vaz, Pablo Ilha. "Efeitos da radiação ionizante e técnicas de proteção aplicadas a projetos de dispositivos MOS customizados." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2015. http://hdl.handle.net/10183/129819.

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Os efeitos produzidos pela interação da radiação ionizante com os circuitos integrados podem ser classificados em efeitos de eventos únicos (Single Event Effects - SEE), comumente relacionados a problemas transientes, e efeitos de dose total ionizante (Total Ionization Dose - TID), os quais se originam em decorrência do longo tempo de exposição à radiação ionizante. Com relação à proteção desses circuitos, técnicas, como redundâncias temporais e espaciais, podem ser aplicadas a fim de reduzir a ocorrência de eventos transientes. Por outro lado, efeitos de TID e mesmo alguns SEE específicos, como os que causam degradações permanentes do circuito, podem ser atenuados drasticamente através de técnicas propostas em nível de layout. Nesse contexto, este trabalho analisa os conceitos básicos envolvidos na interação da radiação com o transistor MOS, desvios de suas características elétricas e técnicas de atenuação dos efeitos acumulativos aplicadas em níveis de arquitetura de sistemas, de processo de fabricação e de dispositivo. Contudo, este trabalho realiza uma abordagem mais detalhada de técnicas de tolerância em nível de layout. A tolerância em nível de layout do transistor é o resultado da combinação entre tecnologia escolhida agregada ao uso de anéis de guarda (guard rings) e aplicação de técnicas em nível de dispositivo como, por exemplo, a de geometria fechada (enclosed-gate). Este trabalho explora diferentes topologias de geometria fechada analisando diferentes modelagens e estimativas de razão de aspecto (W⁄L). Além disso, todas as análises e propostas apresentadas ao longo deste trabalho levam em conta o ambiente de projeto comercial, de forma que os dispositivos e técnicas propostas possam ser aplicadas e fabricadas utilizando ferramentas de projeto comerciais, respeitando restrições quando a dimensões e espaçamentos entre estruturas de acordo com requisitos comerciais de litografia. Os resultados obtidos corroboram o fato de que ao custo de área é possível que se obtenha um dispositivo mais tolerante à radiação e, neste caso, técnicas de mais alto nível ainda podem ser aplicadas de forma a atingir uma maior eficiência de proteção.
Studies related to ionizing radiation effects into MOS transistors are usually classified into two main groups, Single Event Effects (SEE) and Total Ionization Dose (TID). The former is related to transient effects and the later to the permanent effects which occurs during the whole lifetime of integrated circuits and devices. Architecture level for SEE mitigation techniques usually involves redundancy and majority voters, on the other hand, TID mitigation techniques act avoiding or reducing the weak and critical regions in the layout perspective. In this context this work proposes the analysis of primary physical mechanisms of radiation effects in semiconductor components and MOS transistors by exploring the electrical properties and related degradations. The mitigation (or hardening) techniques are explored not only at the architectural level but also by processes improvements. Nonetheless, this work is primarily focused to achieve a radiation hardened circuit by applying specific changes in the layout perspective making the design named as Radiation Hardened by Design (RHBD). Trading the area and circuit density it is possible to harden the most basic building block of electrical circuits (MOS transistors) and, in this case, by applying higher levels of mitigation techniques it is even possible to harden the entire circuit. Hardening by device is a combination of technology node, use of guard rings and techniques such as Enclosed Layout Transistor (ELT). Thus, this work realizes a comparative study of different proposed models to estimate the effective W/L aspect ratio in ELTs. Moreover, the analysis and approaches presented throughout this work take into account the commercial context, i.e., respecting the commercial Process Design Kits rules.
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Glorieux, Maximilien. "Durcissement par conception (RHBD) et modélisation des évènements singuliers dans les circuits intégrés numériques en technologies Bulk 65 nm et FDSOI 28 nm." Thesis, Aix-Marseille, 2014. http://www.theses.fr/2014AIXM4725.

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La miniaturisation des circuits intégrés numériques tend à augmenter leur sensibilité aux radiations. Ainsi le rayonnement naturel peut induire des événements singuliers et porter atteinte à la fiabilité des circuits.Cette thèse porte sur la modélisation des mécanismes à l'origine de ces événements singuliers et sur le développement de solutions de durcissement par conception permettant de limiter l'impact des radiations sur le taux d'erreur.Dans une première partie, nous avons notamment développé une approche dénommée RWDD (Random-Walk Drift- Diffusion) modélisant le transport et la collection de charges au sein d'un circuit, sur la base d'équations physiques sans paramètre d'ajustement. Ce modèle particulaire et sa résolution numérique transitoire permettent de coupler le transport des charges avec un simulateur circuit, tenant ainsi compte de l'évolution temporelle des champs électriques dans la structure. Le modèle RWDD a été intégré avec succès dans une plateforme de simulation capable d'estimer la réponse d'un circuit suite à l'impact d'une particule ionisante.Dans une seconde partie, des solutions de durcissement permettant de limiter l'impact des radiations sur la fiabilité des circuits ont été développées. A l'échelle des cellules élémentaires, de nouvelles bascules robustes aux radiations ont été proposées, en limitant leur impact les performances. Au niveau système, une méthodologie de duplication de l'arbre d'horloge a été développée. Enfin, un flot de triplication a été conçu pour les systèmes dont la fiabilité est critique. L'ensemble de ces solutions a été implémenté en technologie 65 nm et UTBB-FDSOI 28 nm et leur efficacité vérifiée expérimentalement
The extreme technology scaling of digital circuits leads to increase their sensitivity to ionizing radiation, whether in spatial or terrestrial environments. Natural radiation can now induce single event effects in deca-nanometer circuits and impact their reliability.This thesis focuses on the modeling of single event mechanisms and the development of hardening by design solutions that mitigate radiation threat on the circuit error rate.In a first part of this work, we have developed a physical model for both the transport and collection of radiation-induced charges in a biased circuit, derived from pure physics-based equations without any fitting parameter. This model is called Random-Walk Drift-Diffusion (RWDD). This particle-level model and its numerical transient solving allows the coupling of the charge collection process with a circuit simulator, taking into account the time variations of the electrical fields in the structure. The RWDD model is able to simulate the behavior of a circuit following a radiation impact, independently of the implemented function and the considered technology.In a second part of our work, hardening solutions that limit radiation impacts on circuit reliability have been developed. At elementary cell level, new radiation-hardened latch architectures have been proposed, with a limited impact on performances. At system level, a clock tree duplication methodology has been proposed, leaning on specific latches. Finally, a triplication flow has been design for critical applications. All these solutions have been implemented in 65 nm and UTBB-FDSOI 28nm technologies and radiation test have been performed to measure their hardening efficiency
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Phillips, Stanley David. "Single event effects and radiation hardening methodologies in SiGe HBTs for extreme environment applications." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/45854.

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Field-effect transistor technologies have been critical building blocks for satellite systems since their introduction into the microelectronics industry. The extremely high cost of launching payloads into orbit necessitates systems to have small form factor, ultra low-power consumption, and reliable lifetime operation, while satisfying the performance requirements of a given application. Silicon-based complementary metal-oxide-semiconductors (Si CMOS) have traditionally been able to adequately meet these demands when coupled with radiation hardening techniques that have been developed over years of invested research. However, as customer demands increase, pushing the limits of system throughput, noise, and speed, alternative technologies must be employed. Silicon-germanium BiCMOS platforms have been identfied as a technology candidate for meeting the performance criteria of these pioneering satellite systems and deep space applications, contingent on their ability to be hardened to radiation-induced damage. Given that SiGe technology is a relative new- comer to terrestrial and extra-terrestrial applications in radiation-rich environments, the same wealth of knowledge of time-tested radiation hardening methodologies has not been established as it has for Si CMOS. Although SiGe BiCMOS technology has been experimentally proven to be inherently tolerant to total-ionizing dose damage mechanism, the single event susceptibility of this technology remains a primary concern. The objective of this research is to characterize the physical mechanisms that drive the origination of ion-induced transient terminal currents in SiGe HBTs that subsequently lead to a wide range of possible single event phenomena. Building upon this learning, a variety of device-level hardening methodologies are explored and tested for efficacy.
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Hopkins, Thomas A. "An Automated Approach to a 90-nm CMOS DRFM DSSM Circuit Design." Wright State University / OhioLINK, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=wright1281645939.

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Rodrigues, Artemis Socorro do Nascimento. "Caracterização molecular dos antigenos RhD, (RhD fraco e RhD parcial) e sua aplicação na pratica transfusional." [s.n.], 2005. http://repositorio.unicamp.br/jspui/handle/REPOSIP/310418.

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Orientador: Lilian Maria de Castilho
Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Ciencias Medicas
Made available in DSpace on 2018-08-04T11:27:19Z (GMT). No. of bitstreams: 1 Rodrigues_ArtemisSocorrodoNascimento_D.pdf: 9543028 bytes, checksum: 5774a3716484ea2212070f20c266a89f (MD5) Previous issue date: 2005
Resumo: Considerando a imunogenicidade e importância clínica do antígeno RhD bem como o grande número de variantes RhD identificadas, estudos que possam esclarecer sua expressão e mecanismos moleculares envolvidos são importantes para a padronização de técnicas moleculares e sorológicas em diferentes populações. Assim foram nossos objetivos: padronizar técnicas moleculares para realização da genotipagem RHD fraco e determinar sua ocorrência na população brasileira; associar os tipos de RhD fracos encontrados com os haplótipos Rh presentes; e avaliar a aplicação da determinação do antígeno RhD na prática transfusional. Estudamos 503 amostras de DNA de doadores voluntários de sangue fenotipados como RhD ftaco. Destas amostras de DNA estudadas, 415 (82,5%) foram caracterizadas como RhD ftaco, 65 (12,9%) como RhD parcial, 15 (3%) apresentaram associações de RhD parcial e RhD ftaco e 8 (1,6%) foram RhD normal. I Os antígenos RhD fraco tipos 1, 3 e 4 foram os mais fteqüentes em nossa população. Como estes três tipos de RhD fraco não apresentam risco de aloimunização anti-D, pacientes assim classificadospodem ser transfundidos com sangue RhD-positivo. Nossos resultados demonstraram que 12,~A>das amostras fenotipadas como RhD fraco eram na verdade RhD parcial. Os antígenos RhD parciais encontrados em nosso estudo foram D~ DHMi e DVI. Quarenta (7,9%) amostras de DNA foram caracterizadas como D~ 16 (3,2%) como DHMi e 9 (1,8%) como DVI. A caracterização dos antígenos RhD parciais que reagem sorologicamente como RhD ftaco, tais como D DHMi e RhD categoria VI pode ser de grande auxilio na prevenção da aloimunização anti-D em pacientes politransfundidos e gestantes. A freqüência dos antígenos RhD parciais D~ DHMi e DVI encontrada em nossas amostras sugere um elevado risco de aloimunização ao antígeno RhD em pacientes fenotipados como RhD ftaco. - Das 503 amostras estudadas, 15 apresentaram mutações responsáveis pela expressão do antígeno RhD fraco e ao mesmo tempo mutações características de antígenos RhD parciais, ou seja, estas amostras possuíam os antígenos RhD fraco e RhD parcial associados. Estudamos quatro amostras de DNA de pacientes fenotipados como RhD :fraco que apresentavam anti-D. Nosso estudo demonstrou que a aloimunização anti-D nestes pacientes estava relacionada à presença de um antígeno RhD parcial e não a um antígeno RhD :fraco como diagnosticado sorologicamente. Duas amostras foram classificadascomo RhD parcial DAR, 1 como RhD parcial DHMi e 1 como DVI. Os resuhados demonstraram que os tipos de RhD fraco 1, 2, 3 e 4 que foram detectados à TA ou à 3'te e apresentaram grau de aglutinação superior a 1+ na AGH podem ser considerados como RhD positivo, pois não foram associados ao antígeno RhD parcial. Apesar deste trabalho ter sido o único que relacionou os tipos de RhD ftaco com o grau de aglutinação, a literatura revela que ainda não foi demonstrada aloimunização anti-D em pacientes portadores dos antígenos RhD fraco tipos 1,2 e 3. De acordo com os nossos resultados pode-se concluir que: 1. A transfusão com sangue RhD-positivo pode ser recomendada para todos os pacientes que apresentam os tipos do antígeno RhD :ftaco 1, 3 e 4 identificados por técnicas moleculares e para aqueles que apresentarem grau de aglutinação superior a 1+ na fenotipagem RhD. 2. A utilização de métodos de fenotipagem mais sensíveis em combinação com reagentes anti-D de alta afinidade é recomendada na detecção de antígenos RhD ftaco com baixa densidade antigênica em doadores de sangue; 3. Há necessidade da utilização de dois anti-soros monoc1onais (IgM e IgG) na determinação do antígeno RhD :ftacoem pacientes; 4. As genotipagens RHD, RHD ftaco e RHD parcial devem ser rea1i73dasquando os resuhados sorológicos não forem claros ou quando o paciente for politransfundido. 5. A biologia molecular associada à hemaglutinação pode aumentar consideravelmente a segurança transfusional pela mellior caracterização dos antígenos RhD em nossa população
Abstract: The purpose of this study was to characterize by molecular studies theRhD antigens (weak D and partial D) in Brazilian blood donors. DNA samples ftom 503 blood donors phenotyped as weak D were tested by two different sequence-specific primers (pCR-SSP) assays to determine the presence or absence of RHD gene (PCR-SSP intron 4 and exon 10) and to detect the common weak D types. Ofthe 503 weak D samples studied, 415 (82,5%) were identified as weak D, 65 (12,9%) as partial D, 15 (3%) showed association ofweak D and partial D and 8 (1,6%) were normal D. Weak D types 1, 3 and 4 contributed more than 85% of alI molecular weak D types. For these 3 types, D-positive transfusion can be considered safe because no immunization events have been documented yet. These findings show for the first time the frequency of weak D types in Brazilians. Molecular analysis showed that 12,9% of the weak D phenotype samples studied carried a partia! D alIele. The partial Ds found in our study were DAR, DVI and DHMi. Forty (7,9%) DNA samples were characterized as DAR, 16 (3,8%) as DHMi and 9 (1,8%) as DVI. The characterization of the partia! D antigens DAR, DHMi and DVI may avoid alIoimmunization in patients phenotyped as weak D. Fiffeteen patients showed mutations to weak D and partia! D showing that these samples had the weak D and partia! D antigens associated. We also studied 4 DNA samples of patients phenotyped as weak D who had developed anti-D. Our study showed that anti-D alIoimmunization in these patients was associated with the presence of partia! D antigens. Two samples were classified as partia!, D DAR, 1 as DHMi and 1 was DVI.AlI the weak D types identified in our study were associated with the intensity of agglutination obtained at room temperature (RT), 3'fC and AGH. The sensitivity of detecting weak D depends on the anti-D reagent and on the exact conditions of the methods. Our results showed that the weak D types 1, 2, 3 and 4 were frequently detected at RT and 3'fC and therefore could be considered as D-positive for transfusion. According to our results we could recommend the use ofmonoclonal anti-DIgM with high avidity to detect weak D antigen with low antigen density in blood donors and two monoclonals, one IgM and one IgG in combination with AGT to detect the weak D antigen in patients
Doutorado
Ciencias Basicas
Doutor em Clínica Médica
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Axelsson, Lena. "Karakterisering av blodgruppsgenen RHD hos patienter med svagt RhD-antigenuttryck." Thesis, Malmö högskola, Fakulteten för hälsa och samhälle (HS), 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:mau:diva-24168.

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Rh-blodgruppssystemet är mycket komplext med 54 blodgruppsantigen som kodas av två nära varandra belägna gener på kromosom 1 – RHD och RHCE. RHD-genen kodar för RhD-proteinet, ett membranbundet protein på erytrocyter vars antigen utgör de kliniskt viktigaste och mest immunogena efter ABOsystemets, och som kan ge upphov till transfusionskomplikationer och hemolytisk sjukdom hos foster och nyfödda. Vissa individer har varianter av RhD-protein som uttrycks svagare än normalt (”svaga D”), eller där vissa epitoper saknas (”partiella D”), och för vilka serologiska metoder inte kan ge enhetliga resultat. Detta orsakar problem vid blodtransfusion, graviditet och bloddonation, och leder ofta till användning av det redan knappa lagret av RhD-negativa blodenheter för att skydda patienten. I detta projekt har åtta prover med svaga RhD-antigenuttryck sekvenserats med avseende på RHD-genen i syfte att fastställa individernas RhDfenotyp. I sex av proverna hittades sex nukleotidpolymorfismer och två deletioner, som alla är sällsynta men dock är kända sedan tidigare. I två prover kunde inga mutationer i exon eller intilliggande intron påvisas som förklaring till de svaga uttrycken av RhD hos dessa individer.
The Rh blood group system is very complex with 54 blood group antigens encoded by two adjacent genes on chromosome 1 – RHD and RHCE. The RHD gene encodes the RhD protein, a membrane bound protein on erythrocytes whose antigens are the most clinically important and immunogenic after those of the ABO system, and which can result in transfusion complications and haemolytic disease of the fetus and newborn. Some individuals have variants of the RhD proteins that are expressed more weakly than normal (“weak D”), or have some of the epitopes missing (“partial D”), and for which serological methods cannot give a uniform result. This provides a problem in blood transfusion, pregnancy, and blood donation, and often results in the use of the already sparse supply of RhDnegative blood units for the safety of the patient. In this project, eight samples with weak RhD antigen expression have been sequenced with regard to the RHD gene in order to determine the RhD phenotype of the individuals. In six of the samples, six single nucleotide polymorphisms and two deletions were found, all of which are rare but are previously known. For two of the samples, no mutations in exons or adjacent introns could be detected to explain the weak expression of RhD in those individuals.
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Phillips, Stanley D. "Developing radiation hardening by design." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/29640.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2010.
Committee Chair: Cressler, John; Committee Member: Citrin, David; Committee Member: Shen, Shyh-Chiang. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Bustamante-Gallardo, Pedro. "Molecular studies on Rice hoja blanca virus (RHBV)." Thesis, University of East Anglia, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.338096.

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Books on the topic "RHBD"

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Troad y rhod. [Abertawe]: Cyhoeddiadau Barddas, 1997.

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RhB: Gebirgsbahn in Graubünden. Zug: A. Bucheli, 1985.

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Matheson, Kimberly. Functional characterization of the RHD promoter. Ottawa: National Library of Canada, 2002.

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Hyŏn, Yŏng-sŏp. Chiyŏk hyŏksin ŭl wihan RHRD ch'ujin ch'eje kaesŏn pangan yŏn'gu. Sŏul-si: Han'guk Kyoyuk Kaebarwŏn, 2008.

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Flury, Adolf. Alle meine Passagiere: 100 Erlebnisse eines RhB-Zugführers. Chur: Terra Grischuna, 1994.

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Evans, Alice. Cadw rhod Duw i droi: Deunydd defosiynol ar gyfer plant ac ieuenctid. Bangor: Cyhoeddiadau'r Gair, 2003.

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National Museums & Galleries of Wales., ed. Rhyd-y-car: A Welsh mining community : the life, death and re-creation of a Welsh mining community, 1800-1980. Cardiff: National Museums & Galleries of Wales, 2003.

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William, Eurwyn. Rhyd-y-Car. National Museums and Galleries of Wales, 1987.

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Dictionary. Rhcd Indexed/non-Retbl. Random House Reference, 1990.

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House, Random. Rhud CD-ROM for Storage. RH Reference & Information Pu b, 1996.

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Book chapters on the topic "RHBD"

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Poisson, Jessica. "RhD Compatibility." In Transfusion Management of the Obstetrical Patient, 103–6. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-77140-3_12.

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Kato, Shoji, and Jun Fukue. "Astrophysical RHD Flows." In Astronomy and Astrophysics Library, 445–76. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-4174-2_22.

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Thomas, Beth. "Amrywio Sosioieithyddol yn Nhafodiaith Pont-rhyd-y-fen." In Celtic Linguistics / Ieithyddiaeth Geltaidd, 41. Amsterdam: John Benjamins Publishing Company, 1990. http://dx.doi.org/10.1075/cilt.68.08tho.

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Choi, Bum-Rak. "Calcium Measurements from Whole Heart Using Rhod-2." In Methods in Molecular Biology, 217–28. Totowa, NJ: Humana Press, 2012. http://dx.doi.org/10.1007/978-1-62703-086-1_13.

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Clausen, Frederik Banch, Klaus Rieneck, Grethe Risum Krog, Birgitte Suhr Bundgaard, and Morten Hanefeld Dziegiel. "Noninvasive Antenatal Screening for Fetal RHD in RhD Negative Women to Guide Targeted Anti-D Prophylaxis." In Prenatal Diagnosis, 347–59. New York, NY: Springer New York, 2018. http://dx.doi.org/10.1007/978-1-4939-8889-1_23.

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Avent, Neil D. "RHD Genotyping from Maternal Plasma: Guidelines and Technical Challenges." In Prenatal Diagnosis, 185–201. Totowa, NJ: Humana Press, 2008. http://dx.doi.org/10.1007/978-1-59745-066-9_14.

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Mimica, Petar, Miguel-Ángel Aloy, Ewald Müller, and Wolfgang Brinkmann. "Computation of X-ray Blazar Light Curves Using RHD Simulations." In Virtual Astrophysical Jets, 165–72. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2664-5_18.

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Fichou, Yann, and Claude Férec. "Molecular RHD-RHCE Analysis by Multiplex PCR of Short Fluorescent Fragments." In Molecular Typing of Blood Cell Antigens, 97–104. New York, NY: Springer New York, 2015. http://dx.doi.org/10.1007/978-1-4939-2690-9_8.

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Finning, Kirstin, Pete Martin, and Geoff Daniels. "The Use of Maternal Plasma for Prenatal RhD Blood Group Genotyping." In DNA and RNA Profiling in Human Blood, 143–57. Totowa, NJ: Humana Press, 2009. http://dx.doi.org/10.1007/978-1-59745-553-4_11.

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Moore, Teresa. "Manoeuvring Through the Maze of Methodology: Constructing the Research-Ready Embodied RHD Student." In Constructing Methodology for Qualitative Research, 73–87. London: Palgrave Macmillan UK, 2016. http://dx.doi.org/10.1057/978-1-137-59943-8_6.

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Conference papers on the topic "RHBD"

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Chen, Nan, Tingcun Wei, Xiaomin Wei, and Xiao Chen. "A Radiation Hardened SRAM in 180-nm RHBD Technology." In 2013 IEEE International Conference on Dependable, Autonomic and Secure Computing (DASC). IEEE, 2013. http://dx.doi.org/10.1109/dasc.2013.55.

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Jones, Andrew R., Darren O'Connor, Edward Thiemann, Virginia A. Drake, Gregory Newcomb, Neil White, Dean D. Aalami, et al. "Radiation Testing a Very Low-Noise RHBD ASIC Electrometer." In 2010 Radiation Effects Data Workshop. IEEE, 2010. http://dx.doi.org/10.1109/redw.2010.5619512.

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Vaz, Pablo Ilha, and Gilson Inacio Wirth. "Design and comparative performance simulation of RHBD inverter cells in 180nm CMOS." In 2015 30th Symposium on Microelectronics Technology and Devices (SBMicro). IEEE, 2015. http://dx.doi.org/10.1109/sbmicro.2015.7298137.

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K, Sudhir Kumar, Keerthi Priya B, Vineela M, and Rama Koti Reddy D V. "A Design of Low Power Full Seu Tolerance RHBD 10t Sram Cell." In 2020 IEEE India Council International Subsections Conference (INDISCON). IEEE, 2020. http://dx.doi.org/10.1109/indiscon50162.2020.00018.

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Dwivedi, Harish Kumar, Shuvendu Nandi, Shweta Lahariya, and Sangeeta Nakhate. "Combinational and sequential standard cell design using Radiation Hardened By Design (RHBD) Technique." In 2018 International Conference on Advanced Computation and Telecommunication (ICACAT). IEEE, 2018. http://dx.doi.org/10.1109/icacat.2018.8933597.

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Andreou, Charalambos M., Alessandro Paccagnella, Diego M. Gonzalez-Castano, Faustino Gomez, Valentino Liberali, Alexander V. Prokofiev, Cristiano Calligaro, et al. "A subthreshold, low-power, RHBD reference circuit, for earth observation and communication satellites." In 2015 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE, 2015. http://dx.doi.org/10.1109/iscas.2015.7169129.

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Guertin, Steven M., Craig Hafer, and Steve Griffith. "Investigation of Low Cross Section Events in the RHBD/FT UT699 Leon 3FT." In 2011 IEEE Radiation Effects Data Workshop. IEEE, 2011. http://dx.doi.org/10.1109/redw.2010.6062536.

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Wie, B., M. K. Plante, A. Berkley, S. M. Guertin, and R. J. Nejad. "Static, Dynamic, and Application-Level SEE Results for a 49-Core RHBD Processor." In 2013 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with NSREC 2013). IEEE, 2013. http://dx.doi.org/10.1109/redw.2013.6658217.

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Baghbanmanesh, MohammadReza, Franco Maloberti, and Umberto Gatti. "A 10-Bit Radiation-Hardened by Design (RHBD) SAR ADC for Space Applications." In 2017 New Generation of CAS (NGCAS). IEEE, 2017. http://dx.doi.org/10.1109/ngcas.2017.14.

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He, Qian, Aibin Yan, Chaoping Lai, Yinlei Zhang, Chunming Liu, Zhile Chen, Zhen Wu, Jie Cui, and Huaguo Liang. "Novel low cost and DNU online self-recoverable RHBD latch design for nanoscale CMOS." In 2018 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE, 2018. http://dx.doi.org/10.1109/iscas.2018.8351008.

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Reports on the topic "RHBD"

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Li, Luyuan. Targeting Human Rhomboid Family-1 Gene RHBDF 1 in Breast Cancer. Fort Belvoir, VA: Defense Technical Information Center, October 2010. http://dx.doi.org/10.21236/ada562127.

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Anninos, P. Kull ALE: I. Unstructured Mesh Advection, Interface Capturing, and Multiphase 2T RHD with Material Interfaces. Office of Scientific and Technical Information (OSTI), February 2002. http://dx.doi.org/10.2172/15006516.

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