Academic literature on the topic 'Ring Oscillator Design'

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Journal articles on the topic "Ring Oscillator Design"

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Zainol Murad, Sohiful Anuar, Rizalafande Che Ismail, Mohamad Shahimin Mukhzeer, Ahmad Mohd Fairus, and Sapawi Rohana. "Development of Varied CMOS Ring Oscillator Topologies in 0.13-μm CMOS Technology." Applied Mechanics and Materials 446-447 (November 2013): 882–86. http://dx.doi.org/10.4028/www.scientific.net/amm.446-447.882.

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This paper presents varied CMOS ring oscillator topologies using Silterra 0.13-µm Process. Three topologies of ring oscillators have been designed which is the single-ended ring oscillator, differential ring oscillator and ring oscillator based variable resistor for 2.4 GHz wireless applications. The proposed designs consist of five stages delay cell. The simulation results show that a single-ended ring oscillator obtained the lowest power consumption of 0.41 mW, while differential oscillator achieves phase noise of −64.44 dBc/Hz at 1 MHz offset frequency. However, ring oscillator based variable resistor did not achieve any significant improvement. The proposed design is oscillates at 2.4 GHz.
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H, Thejusraj, Prithivi Raj, J. Selvakumar, and S. Praveen Kumar. "Design of High frequency Voltage Controlled Oscillators for Phase Locked Loop." International Journal of Engineering & Technology 7, no. 3.12 (July 20, 2018): 871. http://dx.doi.org/10.14419/ijet.v7i3.12.16553.

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This paper presents the analysis of various oscillators that generate high frequency of oscillation for high speed communication, clock generation and clock recovery. The Ring oscillator and the Current Starved Voltage Controlled Oscillator(CSVCO) (for 5-stagewithout resistor and with resistor) have been implemented using the Cadence Virtuoso tool in 90 nm technology. The generated frequency of oscillation and the power consumption values of the voltage controlled oscillators have been calculated after inclusion in the PLL, and were also compared to identify the most suitable voltage controlled oscillator for a given application.
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I'msaddak, Lobna, Dalenda Ben Issa, Abdennaceur Kachouri, Mounir Samet, and Hekmet Samet. "Infrared Oscillators in Conventional Carbon Nanotube FET Technology." Journal of Circuits, Systems and Computers 24, no. 04 (March 4, 2015): 1550053. http://dx.doi.org/10.1142/s021812661550053x.

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This paper presents the design of C-CNTFET oscillator's arrays for infrared 'IR' technology. These arrays are contained by both of the LC-tank and the voltage control 'coupled N- and P-type C-CNTFET LC-tank' oscillators. In this paper, the analysis of the impact of CNT diameter variations and the nonlinear capacitances (C GD and C GS ) were introduced, especially on propagation time, oscillation frequency and power consumption. The C-CNTFET inverter, ring oscillator, LC-tank and coupled N- and P-type C-CNTFET LC-tank oscillator structures were designed and their speeding and performances have been investigated with the proposed n-type of C-CNTFET model supplied by a 0.5 V power voltage. Simulation results show that the n- and p-types LC-tank oscillator circuit designs achieved an approximately equal oscillation frequency, response time and power consumption. Whereas the coupled N- and P-type C-CNTFET LC-tank oscillator has the lowest power consumption equal to 0.13 μW, the highest oscillation frequency (10.08 THz) and the fastest response time (1.81 ps).
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Priyanka Kumari, B. S., and Sobhit Saxena. "Design and Implementation of Efficient MOSFET’s Utilization Based Proposed Voltage Controlled Oscillator." Journal of Physics: Conference Series 2089, no. 1 (November 1, 2021): 012073. http://dx.doi.org/10.1088/1742-6596/2089/1/012073.

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Abstract Ring oscillator is a device which consists of NOT gates connected in the form of ring. This ring oscillator’s output oscillates between the true and false stages controlled by applied voltage. Now days this voltage controlled oscillator (VCO) becomes the heart of modern electronic devices and communication systems. Earlier five-stage complementary metal oxide semiconductor (CMOS) based VCO for the Phase Locked Loop (PLL) was implemented. High frequency oscillations are required for many applications and further it is observed that a very general technique is normally adopted by researchers to achieve high frequency that if number of transistors is increased then the frequency can be increased. But the consequences of increase in number of transistors are the increase in delay and more number of MOSFET occupies more area and more power dissipation. So, in this paper VCO is designed with efficient utilization of MOSFETs. There is a balance between frequency and number of transistors, so that the area and power dissipation can be reduced. From the obtained results it can observed that the number of MOSFET’s, Independent Nodes, boundary nodes total nodes and power are reduced compared to five stage VCO and VCO based Ring oscillator.
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Loong Teo, Julius Han, Noor Alia Nor Hashim, Azrul Ghazali, and Fazrena Azlee Hamid. "Ring oscillator physically unclonable function using sequential ring oscillator pairs for more challenge-response-pairs." Indonesian Journal of Electrical Engineering and Computer Science 13, no. 3 (March 1, 2019): 892. http://dx.doi.org/10.11591/ijeecs.v13.i3.pp892-901.

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<span>The ring oscillator physically unclonable function (ROPUF) is one of the several types of PUF that has great potential to be used for security purposes. An alternative ROPUF design is proposed with two major differences. Firstly, the memristor is included in the ring oscillators as it is claimed to produce a more random oscillation frequency. Other reasons are its memory-like properties and variable memristance, relative compatibility with CMOS, and small size. Secondly, a different method of generating the response is implemented whereby a sequence of selection of ring oscillator pairs are used to generate a multiple bit response, rather than using only one ring oscillator pair to generate a single bit response. This method significantly expands the set of challenge-response pairs. The proposed memristor-based ROPUF shows 48.57%, 51.43%, and 51.43% for uniqueness, uniformity, and bit-aliasing, respectively. Also, modelling by support vector machine (SVM) on the proposed memristor-based ROPUF only shows 61.95% accuracy, thereby indicating strong resistance against SVM.</span>
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Pal, Reena, Najbeen Bano, Dr Shiksha Jain, and Er Deepika Verma. "Literature Review on Ring Oscillator for Biomedical Application Using CMOS." International Journal for Research in Applied Science and Engineering Technology 11, no. 5 (May 31, 2023): 4858–62. http://dx.doi.org/10.22214/ijraset.2023.52724.

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Abstract: In this paper we have been studies on various design techniques of oscillator for biomedical application. The major subject of this research study is oscillators, which are electronic circuits that generate periodic signals with a constant frequency. A comprehensive review of various oscillator topologies and their characteristics, including stability, frequency range, and phase noise, is provided in this article. The project's objective is to review contemporary oscillator design approaches and consider how they might be applied in a variety of sectors, such as instrumentation, control, and communication systems. Oscillators are electronic circuits that generate repeated waves at set frequency. It is the foundation of numerous electrical gadgets, such as radios, televisions, and computers. Oscillators are used in measurement, control, and communication systems. Science routinely examines the behavior and characteristics of oscillators, such as their stability, frequency range, and phase noise. Researchers may also look at novel oscillator topologies and design approaches to improve performance or enable new applications. Oscillator research is essential for the development of cutting-edge electrical technologies and systems.
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Zhang, Zhao-hua, Rui-feng Yue, and Li-tian Liu. "Accelerometer Design Using MOS Ring Oscillator." Frontiers of Electrical and Electronic Engineering in China 1, no. 1 (January 2006): 77–81. http://dx.doi.org/10.1007/s11460-005-0015-7.

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Sharma, Prakash. "Performance Analysis of Ring Oscillators and Current-Starved VCO in 45-nm CMOS Technology." International Journal for Research in Applied Science and Engineering Technology 10, no. 1 (January 31, 2022): 732–37. http://dx.doi.org/10.22214/ijraset.2022.39908.

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Abstract: This paper presents a relative study among two Ring oscillators architecture (CMOS, NMOS) and current-starved Voltage-controlled oscillator (CS-VCO) on the basis of different parameters like power dissipation ,phase noise etc. All the design has been done in 45- nm CMOS technology node and 2.3 GHz Centre frequency have been taken for the comparison because of their applications in AV Devices and Radio control. An inherent idea of the given performance parameters has been realize by thecomparative study. The comparative data shows that NMOS based Ring oscillator is good option in terms of the phase noise performance. In this study NMOS Ring Oscillator have attain a phase noise -97.94 dBc/Hz at 1 MHz offset frequency from 2.3 GHz center frequency. The related data also shows that CMOS Ring oscillator is the best option in terms of power consumption. In this work CMOS Ring oscillator evacuatea power of 1.73 mW which is quite low. Keywords: Voltage controlled oscillator (VCO), phase noise, power consumption, Complementary metal-oxide-semiconductor (CMOS), Current Starved Voltage-Controlled Oscillator (CS- VCO), Pull up network (PUN), Pull down network (PDN)
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Song, Ming Xin, Shan Shan Wang, and Guo Dong Sun. "CMOS Low Power Ring VCO Design." Advanced Materials Research 981 (July 2014): 70–73. http://dx.doi.org/10.4028/www.scientific.net/amr.981.70.

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A design project of voltage controlled oscillator which is the central component of the low voltage phase locked loop (PLL) is proposed in this paper. The VCO adopted the folding differential voltage controlled oscillator.Simulation results in Cadence Hspice indicate that the VCO proposed behaves in good linearity, simple structure, small phase noise.The frequency range from 125 to 787 MHz, the power consumption of this oscillator is only 6mW at central frequency is 480MHz with 3V power supply.
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Tlelo-Cuautle, Esteban, Perla Rubi Castañeda-Aviña, Rodolfo Trejo-Guerra, and Victor Hugo Carbajal-Gómez. "Design of a Wide-Band Voltage-Controlled Ring Oscillator Implemented in 180 nm CMOS Technology." Electronics 8, no. 10 (October 12, 2019): 1156. http://dx.doi.org/10.3390/electronics8101156.

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The design of a wide-band voltage-controlled oscillator (VCO) modified as a VCO with programmable tail currents is introduced herein. The VCO is implemented by using CMOS current-mode logic stages, which are based on differential pairs that are connected in a ring topology. SPICE simulation results show that the VCO operates within the frequency ranges of 2.65–5.65 GHz, and when it is modified, the VCO with programmable tail currents operates between 1.38 GHz and 4.72 GHz. The design of the CMOS differential stage is detailed along with the symbolic approximation of its dominant pole, which is varied to increase the frequency response in order to achieve a higher oscillation frequency when implementing the ring oscillator structure. The layout of the VCO is described and pre- and post-layout simulations are provided, which are in good agreement using CMOS technology of 180 nm. Finally, process, voltage and temperature variations are performed to guarantee robustness of the designed CMOS ring oscillator.
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Dissertations / Theses on the topic "Ring Oscillator Design"

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Abouelkheir, Nahla Tarek Youssef. "A Clock Multiplier Based on an Injection Locked Ring Oscillator." Thesis, Université d'Ottawa / University of Ottawa, 2020. http://hdl.handle.net/10393/40741.

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Clock multipliers are among the most critical elements in high speed digital circuits. Power consumption, area, jitter and wide tuning range are key design metrics in these circuits. To provide a wide range of clock frequencies, Digitally Controlled Ring Oscillators (DCROs), whose frequencies are discretely tuned using a Frequency Code Word (FCW), have been investigated in recent studies. They have several advantages over LC-based Voltage Controlled Oscillators (VCO) including simplicity of design, small die area (i.e. no large inductors), better compatibility with deep submicron CMOS processes,ability to offer multiple output phases, and wider tuning range.A compact differential Injection Locked Clock Multiplier (ILCM) based on an injection locked DCRO is implemented in this thesis. As the transistor features continuously shrink and the supply voltage is reduced, ILCMs are becoming more prone to issues such as increased effect of random mismatch, increased device noise, susceptibility of the design to noise coupling and vulnerability to Process Voltage and Temperature (PVT) variations. Furthermore, ILCMs in recent System on a Chip (SoCs) have stringent design requirements including accurate frequency tuning, fine fractional resolution, high levels of integration and better amenability to technology scaling. In the proposed ILCM, multiple techniques were used to address deep submicron CMOS design challenges, as well as modern applications’ requirements. The design is fully digital, synthesizable and automatically placed and routed. All circuit blocks were implemented using digital design flow and designed using a Hardware Description Language (HDL). This allows the design to be more easily ported to deep submicron processes. Online or offline PVT calibration can be performed using a replica oscillator and high speed digital counters to track frequency drifts with PVT variations. A DCRO based on a matrix structure has been utilized to reduce period variations due to random mismatch. The DCRO is built up from pseudo differential delay cells to enhance design immunity to noise coupling. The key thesis contributions are implementing a new DCRO structure using fully syntheziable differential structure, utilizing a novel PVT calibrator that can compensate for frequency mismatch between the main DCRO and its replica, and using a low complexity fractional ILCM technique that achieves a fine fractional resolution with few number of ring oscillator stages.Designed in a TSMC 65 nm GP CMOS process with no analog or RF enhancements, the proposed ILCM frequency ranges from 1.0 to 1.8 GHz and occupies 124:5 m 170 m of chip area. The ILCM can operate in integer or fractional mode for multiplication ratios up to 9. At 1.7 GHz and 1.1 V, the measured integrated RMS jitter (1 kHz to 30 MHz) for the 3rd and 9th multiplication factors are 197 fs and 381 fs, respectively. The ILCM consumes 13.25 mW of power and has a fraction resolution of fref=32. Furthermore, it achieves a jitter-power FOM of −241 dB, when measured at room temperature and 1.1 V. When tested in the presence of switching noise, it provides up to 7 dB improvement in phase noise when compared to a single ended version of the ILCM. In the presence of voltage variations (from 0.9 V to 1.1 V) and temperature variations (from 30 C to 70 C), the maximum integrated RMS jitter variation observed was 50 fs.
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Couch, Jacob D. "Investigation of Non-Traditional Applications of the Physical Level in Reconfigurable Computing." Diss., Virginia Tech, 2016. http://hdl.handle.net/10919/78257.

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Multiple research projects are proposed that utilize low-level knowledge of Field Programmable Gate Array (FPGA) and Application Specific Integrated Circuit (ASIC) design processes to enable additional research avenues. In order to accomplish these projects, Tools for Open Reconfigurable Computing (TORC) is utilized to provide a robust environment for circuit analysis and modifications. These projects rely on looking at the low-level constructs of the internals of these microchips. Through this knowledge, techniques for performing supply chain evaluations are proposed utilizing a non-binary comparison of multiple characteristic vectors between different FPGA manufacturing lots, and FPGAs that have been exposed to different environmental conditions. Second, techniques are proposed that look at design recovery by performing fuzzy segmentation and fuzzy matching algorithms to a problem area that has traditionally focused on exact graph sub-isomorphism solutions. Through these projects, additional research vectors are opened to protect and analyze the engineering efforts that are exerted in the design of FPGA and ASIC projects.
Ph. D.
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Gomez, gomez Ricardo. "Design of innovative solutions to improve the variability and reliability of CMOS circuits on thin film technologies." Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALT023.

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La sensibilité accrue aux variations des procedés de fabrication, de tension, de température et de vieillissement (PVTA) dans les nœuds technologiques avancés d'integration est responsable d'une dégradation significative des spécifications des circuits integrés lors de la fabrication à grand volume. Celle-ci est devenue une préoccupation croissante dans la conception de circuits numériques, qui doit faire face aux exigences de plus en plus strictes des applications modernes en termes d'efficacité énergétique, de fiabilité et de sécurité. Dans ce travail de thèse, les techniques de surveillance de timing intégrée et de compensation sont explorées pour répondre efficacement à ces exigences contradictoires. Dans ce travail de thèse, les techniques proposées ont été étudiés séparément puis combinées dans 3 démonstrateurs SoC numériques fabriqués en technologie 28nm FD-SOI CMOS, dont l'un a été mesuré au moment de la rédaction de ce manuscrit.La surveillance de timing intégrée est proposée comme solution de conception pour permettre la compensation des variations PVTA, la surveillance de la sécurité en operation et la protection contre les attaques hardware en timing. Les moniteurs de timing de l'état de l'art ont été évalués dans la perspective d'une intégration dans des produits industriels, ce qui privilégie des caractéristiques telles que la reusabilité et les faibles coûts d'intégration. Les avantages identifiés de la surveillance de timing de registre à registre ont conduit à la mise en œuvre d'un circuit témoin reconfigurable (Tunable Replica Circuit en langue anglaise) avec une sensibilité de 3 mV/bit en 28nm FD-SOI CMOS, qui démontre un suivi rapide et précis des variations PVTA d'un SoC basé sur un ARM Cortex-R4F à travers des corners lent / typique / rapide, une plage de tension 0.5/1.2 V, une gamme de temperature -40/150°C, et de vieillissement jusqu'a fin de vie. Enfin, ce travail propose un nouveau moniteur de timing qui permet de surmonter les faiblesses des solutions existantes, en obtenant simultanément la reutilisabilité élevée et la large plage de surveillance des oscillateurs en anneau et l'acquisition rapide et précise des circuits témoins reconfigurables.L'exploration des techniques d'adaptation et de compensation commence par la détermination de leur champ d'application dans les produits industriels: l'amélioration des pires cas qui définissent les limites de spécifications du produit lors de la fabrication à grand volume. Dans cette perspective, la région d'application optimale des techniques de voltage scaling et de body biasing a été déterminée et leur impact sur les pires cas des SoC numériques a été évalué. Enfin, ces travaux montrent comment la surconsommation induite par l'application séparée de voltage scaling ou body biasing peut être atténuée par la combinaison des deux, en particulier dans les circuits avec une variété de points de performance opérationnelle (OPPs).Les avantages des techniques proposées ont été démontrés dans un SoC numérique qui optimise son énergie à travers d'une largeur de fréquence de 11X en combinant le voltage scaling adaptatif, body biasing adaptatif et le bias-in-memory-array avec un tunable replica circuit pour la sécurité, la régulation de puissance intégrée et la compensation. Grâce à l'application de ces techniques, le circuit proposé permet de surmonter les limites précédemment signalées et démontre une amélioration des performances de 21X, une Vmin inférieure de 120 mV et une durée de vie de 8X, pour les OPP de faible puissance, de moyenne et de haute performance respectivement.Les études présentées ici ont été incluses dans plusieurs chapitres d'un livre scientifique qui sera publié cette année. En outre, elles ont contribué à une nouvelle plateforme de technologie et de conception. Enfin, 3 publications dans des conférences de l'IEEE et 3 demandes de brevet ont résulté de ce travail de thèse
The increased sensitivity to Process, Voltage, Temperature, and Aging (PVTA) variations in scaled integrated circuits' technology nodes is responsible for a significant degradation in the products' specifications during high volume manufacturing. This has become a growing concern in digital circuit design, which has to cope with the increasingly stringent requirements of modern applications in terms of energy efficiency, reliability, and safety. In this thesis work, embedded timing monitoring and compensation techniques are explored to efficiently address these conflicting requirements. The proposed techniques are studied separately and then combined in 3 digital SoC demonstrators manufactured in 28nm FD-SOI CMOS technology, one of which has been measured at the time of this manuscript's writing.Embedded timing monitoring is proposed as a design solution to enable PVTA compensation, in-field safety monitoring and security protection against hardware timing attacks. The state-of-the-art timing monitors are evaluated from the perspective of an integration into industrial products, emphasizing features such as high reusability and low integration costs. The identified advantages of register-to-register timing monitoring have led to the implementation of a 3mV/bit tunable replica circuit in 28nm FD-SOI CMOS, which demonstrates a fast and accurate PVTA tracking of an ARM Cortex-R4F based SoC across slow/typical/fast process, 0.5/1.2V, -40/150ºC, and End Of Life (EOL) aging. Finally, this work proposes a novel timing monitor that overcomes the weaknesses of existing solutions, simultaneously achieving the high reusability and wide monitoring range of ring oscillators and the fast and accurate timing acquisition of tunable replica circuits.The exploration of adaptive and compensation techniques begins with the determination of their application scope in industrial designs: the improvement of the worst-case limiting corners that set the product's specifications during high volume manufacturing. Following this perspective, the optimal region of application of voltage scaling and body biasing techniques has been determined and their impact on the worst-case specifications of digital SoCs has been assessed. Finally, this work demonstrates how the power overhead induced by the separate application of voltage scaling or body biasing can be mitigated through the combination of both, specially in circuits with a variety of Operational Performance Points (OPPs).The benefits of the proposed techniques have been demonstrated in a digital SoC that optimizes its energy across 11X frequency-wide OPPs by combining adaptive voltage scaling, adaptive body biasing, and bias-in-memory-array with a tunable replica circuit for safety, embedded power regulation and compensation. Through the application of these techniques the proposed design overcomes previously reported limitations and demonstrates an improvement by 21X performance, 120mV lower Vmin, and 8X lifetime, the low-power, mid-, and high-performance OPPs respectively.The studies reported here have been included in several chapters of a scientific book to be published this year. Furthermore, they have contributed to a new technology and design platform. Finally, 3 IEEE conference publications and 3 patent applications have resulted from this thesis' work
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Pundir, Nitin K. Pundir. "Design of a Hardware Security PUF Immune to Machine Learning Attacks." University of Toledo / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1513009797455883.

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Walvekar, Trupti. "Ring Oscillator Based Temperature Sensor." Thesis, 2012. https://etd.iisc.ac.in/handle/2005/2541.

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The temperature sensor design discussed in this thesis, is meant mainly to monitor temperature at power outlets. Current variations in power cords have a direct impact on the surrounding temperature. Sensing these variations ,enables us to take necessary measures to prevent any hazards due to temperature rise. Thus, for this application we require a sensor with a moderate temperature error (_10C) over a sensing range of -200C to 1500C. Low power consumption and simple digitizing scheme alleviate measurement errors due to self heating effects of the sensor. A current starved inverter based ring oscillator was chosen for the sensor design in 130nm technology. The inverter delay variation with temperature is used for sensing. Linearity and process invariancy of these characteristics are fundamental to the sensor design. We observed through simulations, and confirmed by mathematical analysis, that the sensing characteristics are governed by bias current dependence on temperature. Control voltage for the bias circuitry of the oscillator determines current through the inverter stages. Hence, for linear sensing characteristics, a control voltage(Vc) just above the maximum threshold voltage of bias transistor is used. This enables generation of PTAT saturation current for current starved inverters, due to dominance of threshold voltage decrease with temperature over mobility decrease. I.Another limitation, process dependency of the sensing characteristics, was overcome through the proposed calibration based compensation technique. A changing Vc proportional to threshold voltage variation with process, process independent bias current and current temperature characteristics were obtained. This compensated for the process variation effects on frequency. Thus, a variable Vc was generated using a reference with low temperature sensitivity of 17.6_V=0C, and resistive divider combinations for various processes. Incorporating this compensation technique we achieved good linearity in sensor characteristics and a maximum temperature error of± 1.60C over the sensing range. The sensor consumes a low power of 0.29mW and also occupies minimal area.
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Walvekar, Trupti. "Ring Oscillator Based Temperature Sensor." Thesis, 2012. http://etd.iisc.ernet.in/handle/2005/2541.

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The temperature sensor design discussed in this thesis, is meant mainly to monitor temperature at power outlets. Current variations in power cords have a direct impact on the surrounding temperature. Sensing these variations ,enables us to take necessary measures to prevent any hazards due to temperature rise. Thus, for this application we require a sensor with a moderate temperature error (_10C) over a sensing range of -200C to 1500C. Low power consumption and simple digitizing scheme alleviate measurement errors due to self heating effects of the sensor. A current starved inverter based ring oscillator was chosen for the sensor design in 130nm technology. The inverter delay variation with temperature is used for sensing. Linearity and process invariancy of these characteristics are fundamental to the sensor design. We observed through simulations, and confirmed by mathematical analysis, that the sensing characteristics are governed by bias current dependence on temperature. Control voltage for the bias circuitry of the oscillator determines current through the inverter stages. Hence, for linear sensing characteristics, a control voltage(Vc) just above the maximum threshold voltage of bias transistor is used. This enables generation of PTAT saturation current for current starved inverters, due to dominance of threshold voltage decrease with temperature over mobility decrease. I.Another limitation, process dependency of the sensing characteristics, was overcome through the proposed calibration based compensation technique. A changing Vc proportional to threshold voltage variation with process, process independent bias current and current temperature characteristics were obtained. This compensated for the process variation effects on frequency. Thus, a variable Vc was generated using a reference with low temperature sensitivity of 17.6_V=0C, and resistive divider combinations for various processes. Incorporating this compensation technique we achieved good linearity in sensor characteristics and a maximum temperature error of± 1.60C over the sensing range. The sensor consumes a low power of 0.29mW and also occupies minimal area.
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HUANG, CIN-SYUAN, and 黃欽鉉. "Study of Voltage Controlled Ring Oscillator Design." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/gnsp8r.

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碩士
國立勤益科技大學
電子工程系
107
The voltage controlled ring oscillator (VCRO) is widely used in low-power portable electronic systems due to its simplicity. In this thesis, two low power VCROs with 5GHz frequency are proposed for portable electronic applications. The circuit designs are performed based on TSMC 1P6M 0.18μm standard process technology with supply voltage 1.8V. The objective is to fetch smaller layout area and reduced fabrication cost, but to keep its superiority. Simulation results show that the proposed VCRO designs as compared to existing current staved VCRO, the number of transistors is reduced. The layout area of the proposed Type-I VCRO circuit has reduced by 12.4%, and that of Type-II circuit has 38.2% reduced. In fact, the proposed two VCROs suggest higher oscillating frequency with 5 G Hz, however dissipate lower power consumption. Therefore, the two proposed VCROs are superior to other references, and they are practical and feasible for low-power portable electronic applications.
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Ciou, Jhong-Min, and 邱忠民. "Design and Implementation of RF CMOS Ring Oscillator." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/82253945308267541992.

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碩士
雲林科技大學
電子與資訊工程研究所
96
This paper presents the design of RF CMOS ring oscillator. It adopts dual-differential delay cell of the three-stage ring oscillator. The internal structure uses dual-differential delay cell. The negative skewed delay path is directly connected to the output of the same stage, and utilizes dual-delay path techniques to obtain a wide tuning range. Voltage controlled ring oscillator is fabricated in a TSMC 0.35 Mixed-Signal 2P4M CMOS technology. After layout the controlled voltage is 1.2V~3.3V, resulting in oscillation frequency ranges of 2.15GHz~0.957GHz, and the tuning range is approximately 75.6%. The power dissipation is 71.33mW~101mW.After layout the phase noise is -100.12dBc/Hz at a 1MHz offset from a 1.53GHz center frequency.
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Yang, Chen-Hao, and 楊振豪. "Design of CMOS Differential Voltage Controlled Ring Oscillator." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/05220252527619753755.

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碩士
國立勤益科技大學
電子工程系
103
In this paper, a CMOS differential voltage controlled ring oscillator (DVCRO) is proposed for wireless energy transmission application. Based on TSMC CMOS 0.18um standard process technology with supply voltage 1.8V, the proposed DVCRO has phase noise -94.37 dBc/Hz with 1 MHz offset frequency. Its oscillation frequency ranges from 0.72GHz to 1.02GHz as the control voltage changing from 0.6 to 1.8 V. Compared with five previous works, the proposed DVCRO has better performance including robust sinusoid output waveform, and lower power consumption ranging from 1.6mW to 1.74mW, approximately 4/5 of the referenced works compared with the best one, and figure of merit (FOM) is -151.18 dBc/Hz.
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Tseng, Shih-Wei, and 曾世緯. "Design of Tunable Ring Oscillator and Output Buffer." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/hw2zje.

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碩士
國立虎尾科技大學
光電與材料科技研究所
98
A ring oscillator, which uses digital codes to control the transmission paths, has been proposed in this thesis. As the transmission paths changes, different output frequencies are generated. Moreover, a current-adjusted inverter is used as the last output stage. Therefore the output frequency can be further calibrated. Comparing to the conventional oscillators, the proposed one can have multiple output frequencies. The proposed digital-code-controlled ring oscillator has been simulated with HSpice where 0.35μm mixed-signal 2P4M polycide 3.3/5V fabricated parameters have been adopted. Simulation results show that, 32 different output frequencies can be obtained. The maximum frequency is 1.05GHz and the minimum frequency is 188.4MHz. As the supply voltage is 3.3 V and the load capacitance is 20 pF, the maximum power consumption is 402.52 mW. Since the oscillator can generate different output frequencies, the low output frequency needs less number of stages of cascaded buffers while the high output frequency needs more. If both the low output frequency and the high output frequency use same stages of cascaded buffers, it will bring extra power consumptions at low output frequency. In this thesis, an adaptive stage cascaded buffer has been proposed. In order to reduce additional power dissipation, the stages of cascaded buffers will be adjusted according to the output frequency. In the proposed circuit, as the input signal frequency varies from 1MHz to 100MHz, the corresponding stage of output buffer can be increased from 1 to 3. The proposed adaptive cascaded buffer has been simulated with HSpice where 0.35μm mixed-signal 2P4M polycide 3.3/5V fabricated parameters have been adopted. As the supply voltage is 3.3V, load capacitance is 15pF, and the input signal frequency is from 1MHz to 100MHz. The post-layout simulation results show that, the power consumption of the proposed circuit can reduce 110.22mW and 105.93mW, respectively, as compared to the conventional buffer.
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Books on the topic "Ring Oscillator Design"

1

A, McNeill John, and SpringerLink (Online service), eds. The Designer's Guide to Jitter in Ring Oscillators. Boston, MA: Springer-Verlag US, 2009.

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Hanaoka, Kenji. Design of a transverse feedback system agaisnt multi bunch beam oscillation due to impedance in the KEK B-factory rings. Tsukuba-shi, Ibaraki-ken Japan: National Laboratory for High Energy Physics, 1995.

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Ricketts, David, and John A. A. McNeill. The Designer's Guide to Jitter in Ring Oscillators. Springer, 2010.

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Book chapters on the topic "Ring Oscillator Design"

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Ye, Xuhao, Zixuan Gao, Rongkai Cheng, Shuaiteng Liu, and Kaiwen Zheng. "Ring Oscillator Optimization Design Model Summary." In Lecture Notes in Electrical Engineering, 429–35. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-2287-1_61.

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Tehranipoor, Mohammad, Hassan Salmani, and Xuehui Zhang. "Design for Hardware Trust: Ring Oscillator Network." In Integrated Circuit Authentication, 91–124. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00816-5_6.

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Tajalli, Armin, and Yusuf Leblebici. "Widely Adjustable Ring Oscillator Based ΣΔ ADC." In Extreme Low-Power Mixed Signal IC Design, 215–42. New York, NY: Springer New York, 2010. http://dx.doi.org/10.1007/978-1-4419-6478-6_9.

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Dai, Liang, and Ramesh Harjani. "Universal Model for Ring Oscillator Phase Noise." In Design of High-Performance CMOS Voltage-Controlled Oscillators, 55–86. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4615-1145-8_5.

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Goyal, Bhavana, Shruti Suman, and P. K. Ghosh. "Design of Ultra Low Power Voltage Controlled Ring Oscillator." In Advances in Intelligent Systems and Computing, 513–21. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-2750-5_53.

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Verma, Anmol, Shubhang Srivastava, and Ambika Prasad Shah. "Aging Resilient and Energy Efficient Ring Oscillator for PUF Design." In Communications in Computer and Information Science, 199–211. Cham: Springer Nature Switzerland, 2022. http://dx.doi.org/10.1007/978-3-031-21514-8_18.

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Santiccioli, Alessio. "Inductorless Frequency Synthesizers for Low-Cost Wireless." In Special Topics in Information Technology, 37–50. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-62476-7_4.

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AbstractThe quest for ubiquitous wireless connectivity, drives an increasing demand for compact and efficient means of frequency generation. Conventional synthesizer options, however, generally trade one requirement for the other, achieving either excellent levels of efficiency by leveraging LC-oscillators, or a very compact area by relying on ring-oscillators. This chapter describes a recently introduced class of inductorless frequency synthesizers, based on the periodic realignment of a ring-oscillator, that have the potential to break this tradeoff. After analyzing their jitter-power product, the conditions that ensure optimum performance are derived and a novel digital-to-time converter range-reduction technique is introduced, to enable low-jitter and low-power fractional-N frequency synthesis. A prototype, which implements the proposed design guidelines and techniques, has been fabricated in 65 nm CMOS. It occupies a core area of 0:0275 mm$$^{2}$$ 2 and covers the 1:6-to-3:0 GHz range, achieving an absolute rms jitter (integrated from 30 kHz-to-30 MHz) of 397 fs at 2:5 mW power. With a corresponding jitter-power figure-of-merit of −244 dB in the fractional-N mode, the prototype outperforms prior state-of-the-art inductorless frequency synthesizers.
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Bayon, Pierre, Lilian Bossuet, Alain Aubert, Viktor Fischer, François Poucheret, Bruno Robisson, and Philippe Maurine. "Contactless Electromagnetic Active Attack on Ring Oscillator Based True Random Number Generator." In Constructive Side-Channel Analysis and Secure Design, 151–66. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-29912-4_12.

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de Matos Pinto, Agord, Raphael R. N. Souza, Leandro Tiago Manera, Jorge Enrique Vargas Solano, Cássia Maria Chagas, and Saulo Finco. "Design of the Voltage-Controlled Ring Oscillator Using Optimization Tools (MunEDA® WiCkeD)." In Proceedings of the 3rd Brazilian Technology Symposium, 179–92. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-93112-8_19.

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Hoang, Van-Phuc, Quang Phuong Nguyen, Van Trung Nguyen, Thanh Trung Nguyen, and Xuan Nam Tran. "A Design of CMOS PUF Based on Ring Oscillator and Time-to-Digital Converter." In Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering, 233–42. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-77424-0_19.

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Conference papers on the topic "Ring Oscillator Design"

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Dang, Tuan-Kiet, Ronaldo Serrano, Trong-Thuc Hoang, and Cong-Kha Pham. "A Novel Ring Oscillator PUF for FPGA Based on Feedforward Ring Oscillators." In 2022 19th International SoC Design Conference (ISOCC). IEEE, 2022. http://dx.doi.org/10.1109/isocc56007.2022.10031300.

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Zihan Pang, Jiliang Zhang, Qiang Zhou, Shuqian Gong, Xu Qian, and Bin Tang. "Crossover Ring Oscillator PUF." In 2017 18th International Symposium on Quality Electronic Design (ISQED). IEEE, 2017. http://dx.doi.org/10.1109/isqed.2017.7918322.

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Shanbhag, Pooja S., Sujata Kotabagi, Priyanka Buduru, Pruthvi Benagi, S. Suma, and H. Shraddha. "Ring Oscillator with Improved Design." In 2021 34th International Conference on VLSI Design and 2021 20th International Conference on Embedded Systems (VLSID). IEEE, 2021. http://dx.doi.org/10.1109/vlsid51830.2021.00015.

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Park, Himchan, Zhang-Zhi Yu, Jinwoo Kim, and Jinwook Burm. "Resolution tunable ring oscillator type TDC." In 2016 International SoC Design Conference (ISOCC). IEEE, 2016. http://dx.doi.org/10.1109/isocc.2016.7799767.

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Gao, Mingze, Khai Lai, and Gang Qu. "A Highly Flexible Ring Oscillator PUF." In the The 51st Annual Design Automation Conference. New York, New York, USA: ACM Press, 2014. http://dx.doi.org/10.1145/2593069.2593072.

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Suman, Shruti, Monika Bhardwaj, and B. P. Singh. "An Improved Performance Ring Oscillator Design." In Communication Technologies (ACCT). IEEE, 2012. http://dx.doi.org/10.1109/acct.2012.21.

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Mahato, Ajay Kumar. "Ultra low frequency CMOS ring oscillator design." In 2014 Recent Advances in Engineering and Computational Sciences (RAECS). IEEE, 2014. http://dx.doi.org/10.1109/raecs.2014.6799627.

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Rout, Prakash Kumar, and Debiprasad Priyabrata Acharya. "Design of CMOS ring oscillator using CMODE." In 2011 International Conference on Energy, Automation, and Signal (ICEAS). IEEE, 2011. http://dx.doi.org/10.1109/iceas.2011.6147142.

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Martinez-Gomez, Cristina, and Iluminada Baturone. "Calibration of Ring Oscillator PUF and TRNG." In 2020 European Conference on Circuit Theory and Design (ECCTD). IEEE, 2020. http://dx.doi.org/10.1109/ecctd49232.2020.9218444.

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Dalakoti, Aditya, Merritt Miller, and Forrest Brewer. "Pulse Ring Oscillator Tuning via Pulse Dynamics." In 2017 IEEE 35th International Conference on Computer Design (ICCD). IEEE, 2017. http://dx.doi.org/10.1109/iccd.2017.82.

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Reports on the topic "Ring Oscillator Design"

1

Deaton and Frost. L51571 Pipe-Soil Interaction Tests on Sand and Soft Clay. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), October 1987. http://dx.doi.org/10.55274/r0010291.

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This project was performed to establish a basis for developing pipe-soil interaction models suitable for PRCI's pipeline design program: "PIPEDYN". Full-scale pipe-soil tests on loose and dense sand and soft clay were performed at the Norwegian Hydrotechnical Laboratory, affiliated with SINTEF. The program tested soil resistance to lateral motions of full-scale (0.5 m and 1.0 m OD) pipe sections on loose and dense sand and soft clay. A test rig was used with a soil flume 12.5 m long, 1.8 m wide, and 0.6 m high, and containing 13.5 m3 of sand or soft clay. Three control signals were applied to the test pipes: simple breakout, regular oscillatory tests and breakout, and random tests with force time histories. The parameters considered were pipe diameter, pipe weight, pipe oscillations, and oscillation amplitude. A total of 110 tests were performed in 25 test flumes (13 preliminary and 12 main) on loose sand, three test flumes on dense sand and ten test flumes on soft clay. Forty-five preliminary and 32 main tests were performed in 25 loose sand flume preparations, whereas 8 main tests were performed in 3 dense sand flumes and 25 main tests in 10 soft clay flumes, for a grand total of 110 pipe-soil tests in 38 soil flumes. Special plate and cone penetration tests were also performed as part of the soil bed tests. Based on the results of the tests, pipe penetration appears to be the most important factor influencing lateral soil resistance. Also, the soil resistance in loose sand was generally higher than in dense sand due to larger pipe penetration and an accordingly higher lateral earth pressure.
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