Relevant bibliographies by topics / RRAM

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'RRAM'

Author: Grafiati
Published: 4 June 2021
Last updated: 25 May 2024

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Journal articles on the topic "RRAM"

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Lee, Doowon, and Hee-Dong Kim. "Effect of Hydrogen Annealing on Performances of BN-Based RRAM." Nanomaterials 13, no. 10 (May 18, 2023): 1665. http://dx.doi.org/10.3390/nano13101665.

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BN-based resistive random-access memory (RRAM) has emerged as a potential candidate for non-volatile memory (NVM) in aerospace applications, offering high thermal conductivity, excellent mechanical, and chemical stability, low power consumption, high density, and reliability. However, the presence of defects and trap states in BN-based RRAM can limit its performance and reliability in aerospace applications. As a result, higher set voltages of 1.4 and 1.23 V were obtained for non-annealed and nitrogen-annealed BN-based RRAM, respectively, but lower set voltages of 1.06 V were obtained for hydrogen-annealed BN-based RRAM. In addition, the hydrogen-annealed BN-based RRAM showed an on/off ratio of 100, which is 10 times higher than the non-annealed BN-based RRAM. We observed that the LRS changed to the HRS state before 10,000 s for both the non-annealed and nitrogen-annealed BN-based RRAMs. In contrast, the hydrogen-annealed BN-based RRAM showed excellent retention characteristics, with data retained up to 10,000 s.
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Kim, Kyoungdu, Woongki Hong, Changmin Lee, Won-Yong Lee, Do Won Kim, Hyeon Joong Kim, Hyuk-Jun Kwon, Hongki Kang, and Jaewon Jang. "Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory." Materials Research Express 8, no. 11 (November 1, 2021): 116301. http://dx.doi.org/10.1088/2053-1591/ac3400.

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Abstract In this study, sol–gel-processed amorphous-phase ZrO2 was used as an active channel material to improve the resistive switching properties of resistive random access memories (RRAMs). ITO/ZrO2/Ag RRAM devices exhibit the properties of bipolar RRAMs. The effect of the post-annealing temperature on the electrical properties of the ZrO2 RRAM was investigated. Unlike the ZrO2 films annealed at 400 and 500 °C, those annealed at 300 °C were in amorphous phase. The RRAM based on the amorphous-phase ZrO2 exhibited an improved high-resistance state (HRS) to low-resistance state ratio (over 106) as well as promising retention and endurance characteristics without deterioration. Furthermore, its disordered nature, which causes efficient carrier scattering, resulted in low carrier mobility and the lowest leakage current, influencing the HRS values.
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Lin, Wu, and Chen. "Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories." Crystals 9, no. 6 (June 19, 2019): 318. http://dx.doi.org/10.3390/cryst9060318.

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: In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm2O3 and V2O5 films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance State and Low-Resistance State of Resistive memory (RHRS/RLRS) ratio of the RRAM device containing a V2O5/Sm2O3 bilayer is one order of magnitude higher than that of the devices containing a single layer of V2O5 or Sm2O3. We also found that the stacking sequence of the Sm2O3 and V2O5 films in the bilayer structure can affect the switching features of the RRAM, causing them to exhibit both bipolar resistive switching (BRS) behavior and self-compliance behavior. The current conduction mechanisms of RRAM devices with different film structures were also discussed.
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Lonn, Eija, Esa Koskela, Tapio Mappes, Mikael Mokkonen, Angela M. Sims, and Phillip C. Watts. "Balancing selection maintains polymorphisms at neurogenetic loci in field experiments." Proceedings of the National Academy of Sciences 114, no. 14 (March 21, 2017): 3690–95. http://dx.doi.org/10.1073/pnas.1621228114.

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Most variation in behavior has a genetic basis, but the processes determining the level of diversity at behavioral loci are largely unknown for natural populations. Expression of arginine vasopressin receptor 1a (Avpr1a) and oxytocin receptor (Oxtr) in specific regions of the brain regulates diverse social and reproductive behaviors in mammals, including humans. That these genes have important fitness consequences and that natural populations contain extensive diversity at these loci implies the action of balancing selection. In Myodes glareolus, Avpr1a and Oxtr each contain a polymorphic microsatellite locus located in their 5′ regulatory region (the regulatory region-associated microsatellite, RRAM) that likely regulates gene expression. To test the hypothesis that balancing selection maintains diversity at behavioral loci, we released artificially bred females and males with different RRAM allele lengths into field enclosures that differed in population density. The length of Avpr1a and Oxtr RRAMs was associated with reproductive success, but population density and the sex interacted to determine the optimal genotype. In general, longer Avpr1a RRAMs were more beneficial for males, and shorter RRAMs were more beneficial for females; the opposite was true for Oxtr RRAMs. Moreover, Avpr1a RRAM allele length is correlated with the reproductive success of the sexes during different phases of reproduction; for males, RRAM length correlated with the numbers of newborn offspring, but for females selection was evident on the number of weaned offspring. This report of density-dependence and sexual antagonism acting on loci within the arginine vasopressin–oxytocin pathway explains how genetic diversity at Avpr1a and Oxtr could be maintained in natural populations.
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Ansh and Mayank Shrivastava. "Superior resistance switching in monolayer MoS2 channel-based gated binary resistive random-access memory via gate-bias dependence and a unique forming process." Journal of Physics D: Applied Physics 55, no. 8 (November 12, 2021): 085102. http://dx.doi.org/10.1088/1361-6463/ac3281.

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Abstract Resistance switching (RS) in 2D molybdenum disulfide (MoS2) was recently discovered. Since the discovery, many reports demonstrating MoS2 resistive random-access memory (RRAM) with synapse-like behavior have been published. These reports strongly justify applications of MoS2 RRAM in neuromorphic hardware as well as an alternative to conventional binary memories. In this work, we unveil the effect of RS, induced by current–voltage hysteresis cycles across CVD-grown monolayer MoS2-based gated RRAM, on its transistor’s electrical and reliability characteristics. A unique gate voltage dependence on the RS is identified which has a remarkable impact on the switching performance of MoS2 RRAM. RS behavior was found to be significantly dependent on the charge conduction in the channel. Moreover, we have shown a potential device-forming event when MoS2-gated RRAMs were subjected to a steady-state electrical stress. Both hysteresis and steady-state electrical stress were found to disturb the transistor action of these gated RRAMs, which can in fact be used as a signature of RS. Interestingly, current–voltage hysteresis resulted in unipolar RS, whereas steady-state electrical stress before RS measurement led to bipolar RS. Moreover, successive stress cycles of such electrical stress lead to multiple resistance states, a behavior similar to synaptic properties such as long-term potentiation and long-term depression, typically found in memristors. We find that the charge transport mechanism dominant in the MoS2 FET, in conjunction with steady-state stress-induced device forming, determine the extent of RS induced in thes MoS2-based gated RRAMs. Finally, on the basis of insights developed from the dependence on the charge transport mechanism and steady-state stress-induced forming of the MoS2 channel, we propose a certain steady-state electrical stress condition which can be used as a ‘forming’ process, employed prior to the use of MoS2-based binary RRAMs for improved switching performance.
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Xie, Hao, Jun Hu, Zhili Wang, Xiaohui Hu, Hong Liu, Wei Qi, and Shuo Zhang. "Multiphysics Simulation of Crosstalk Effect in Resistive Random Access Memory with Different Metal Oxides." Micromachines 13, no. 2 (February 6, 2022): 266. http://dx.doi.org/10.3390/mi13020266.

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Based on the electrical conductivity model built for graphene oxide, the thermal crosstalk effects of resistive random access memory (RRAM) with graphene electrode and Pt electrode are simulated and compared. The thermal crosstalk effects of Pt-RRAM with different metal oxides of TiOx, NiOx, HfOx, and ZrOx are further simulated and compared to guide its compatibility design. In the Pt-RRAM array, the distributions of oxygen vacancy density and temperature are obtained, and the minimum spacing between adjacent conduction filaments to avoid device operation failure is discussed. The abovementioned four metal oxides have different physical parameters such as diffusivity, electrical conductivity, and thermal conductivity, from which the characters of the RRAMs based on one of the oxides are analyzed. Numerical results reveal that thermal crosstalk effects are severe as the spacing between adjacent conduction filaments is small, even leading to the change of logic state and device failure.
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Tsai, Jeff T. H., Chia-Yun Hsu, Chia-Hsiang Hsu, Chu-Shou Yang, and Tai-Yuan Lin. "Fabrication of Resistive Random Access Memory by Atomic Force Microscope Local Anodic Oxidation." Nano 10, no. 02 (February 2015): 1550028. http://dx.doi.org/10.1142/s1793292015500289.

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The fabrication of gallium, zinc and nickel oxide nanodots for application of resistive random access memory (RRAM) was demonstrated using the atomic force microscopy (AFM) local anodic oxidation technique. Thin metal films were deposited on indium tin oxide conductive glass substrates. In the atmospheric environment, using AFM equipped with an Ag -coated probe can generate metal oxide nanodots locally on the metal films. These nanodots act as an insulator layer in a single unit cell of the RRAM. The voltage-biased method allows devices to reset from a low-resistance state (LRS) to a high-resistance state (HRS) at 0.9 V. These results show the ability of the AFM local anodic oxidation to produce 50 nm NiO nanodots on glass substrates for potentially high-density RRAMs. As we developed the characteristics of the structure, we found that a lateral NiO nanobelt RRAM performs very low power operation from such experimental manufacturing process. Using a current-biased method, the lateral device switches from a HRS to a LRS with a low writing voltage of 0.64 V.
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Alimkhanuly, Batyrbek, Sanghoek Kim, Lok-won Kim, and Seunghyun Lee. "Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode." Nanomaterials 10, no. 9 (August 20, 2020): 1634. http://dx.doi.org/10.3390/nano10091634.

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Resistive random access memories (RRAMs) are a type of resistive memory with two metal electrodes and a semi-insulating switching material in-between. As the persistent technology node downscaling continues in transistor technologies, RRAM designers also face similar device scaling challenges in simple cross-point arrays. For this reason, a cost-effective 3D vertical RRAM (VRRAM) structure which requires a single pivotal lithography step is attracting significant attention from both the scientific community and the industry. Integrating an extremely thin plane electrode to such a structure is a difficult but necessary step to enable high memory density. In addition, experimentally verifying and modeling such devices is an important step to designing RRAM arrays with a high noise margin, low resistive-capacitive (RC) delays, and stable switching characteristics. In this work, we conducted an electromagnetic analysis on a 3D vertical RRAM with atomically thin graphene electrodes and compared it with the conventional metal electrode. Based on the experimental device measurement results, we derived a theoretical basis and models for each VRRAM design that can be further utilized in the estimation of graphene-based 3D memory at the circuit and architecture levels. We concluded that a 71% increase in electromagnetic field strength was observed in a 0.3 nm thick graphene electrode when compared to a 5 nm thick metal electrode. Such an increase in the field led to much lower energy consumption and fluctuation range during RRAM switching. Due to unique graphene properties resulting in improved programming behavior, the graphene-based VRRAM can be a strong candidate for stacked storage devices in new memory computing platforms.
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Arumí, Daniel, Salvador Manich, Álvaro Gómez-Pau, Rosa Rodríguez-Montañés, Víctor Montilla, David Hernández, Mireia Bargalló González, and Francesca Campabadal. "Impact of Laser Attacks on the Switching Behavior of RRAM Devices." Electronics 9, no. 1 (January 20, 2020): 200. http://dx.doi.org/10.3390/electronics9010200.

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The ubiquitous use of critical and private data in electronic format requires reliable and secure embedded systems for IoT devices. In this context, RRAMs (Resistive Random Access Memories) arises as a promising alternative to replace current memory technologies. However, their suitability for this kind of application, where the integrity of the data is crucial, is still under study. Among the different typology of attacks to recover information of secret data, laser attack is one of the most common due to its simplicity. Some preliminary works have already addressed the influence of laser tests on RRAM devices. Nevertheless, the results are not conclusive since different responses have been reported depending on the circuit under testing and the features of the test. In this paper, we have conducted laser tests on individual RRAM devices. For the set of experiments conducted, the devices did not show faulty behaviors. These results contribute to the characterization of RRAMs and, together with the rest of related works, are expected to pave the way for the development of suitable countermeasures against external attacks.
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Zhang, Yuhang, Guanghui He, Feng Zhang, Yongfu Li, and Guoxing Wang. "The study of lithographic variation in resistive random access memory." Journal of Semiconductors 45, no. 5 (May 1, 2024): 052303. http://dx.doi.org/10.1088/1674-4926/45/5/052303.

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Abstract Reducing the process variation is a significant concern for resistive random access memory (RRAM). Due to its ultra-high integration density, RRAM arrays are prone to lithographic variation during the lithography process, introducing electrical variation among different RRAM devices. In this work, an optical physical verification methodology for the RRAM array is developed, and the effects of different layout parameters on important electrical characteristics are systematically investigated. The results indicate that the RRAM devices can be categorized into three clusters according to their locations and lithography environments. The read resistance is more sensitive to the locations in the array (~30%) than SET/RESET voltage (<10%). The increase in the RRAM device length and the application of the optical proximity correction technique can help to reduce the variation to less than 10%, whereas it reduces RRAM read resistance by 4×, resulting in a higher power and area consumption. As such, we provide design guidelines to minimize the electrical variation of RRAM arrays due to the lithography process.
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Dissertations / Theses on the topic "RRAM"

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Dogan, Rabia. "System Level Exploration of RRAM for SRAM Replacement." Thesis, Linköpings universitet, Elektroniksystem, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-92819.

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Recently an effective usage of the chip area plays an essential role for System-on-Chip (SOC) designs. Nowadays on-chip memories take up more than 50%of the total die-area and are responsible for more than 40% of the total energy consumption. Cache memory alone occupies 30% of the on-chip area in the latest microprocessors. This thesis project “System Level Exploration of RRAM for SRAM Replacement” describes a Resistive Random Access Memory (RRAM) based memory organizationfor the Coarse Grained Reconfigurable Array (CGRA) processors. Thebenefit of the RRAM based memory organization, compared to the conventional Static-Random Access Memory (SRAM) based memory organization, is higher interms of energy and area requirement. Due to the ever-growing problems faced by conventional memories with Dynamic Voltage Scaling (DVS), emerging memory technologies gained more importance. RRAM is typically seen as a possible candidate to replace Non-volatilememory (NVM) as Flash approaches its scaling limits. The replacement of SRAMin the lowest layers of the memory hierarchies in embedded systems with RRAMis very attractive research topic; RRAM technology offers reduced energy and arearequirements, but it has limitations with regards to endurance and write latency. By reason of the technological limitations and restrictions to solve RRAM write related issues, it becomes beneficial to explore memory access schemes that tolerate the longer write times. Therefore, since RRAM write time cannot be reduced realistically speaking we have to derive instruction memory and data memory access schemes that tolerate the longer write times. We present an instruction memory access scheme to compromise with these problems. In addition to modified instruction memory architecture, we investigate the effect of the longer write times to the data memory. Experimental results provided show that the proposed architectural modifications can reduce read energy consumption by a significant frame without any performance penalty.
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Amer, Aya G. (Aya Galal Mahdy ElSayed). "SHARC : self-healing analog with RRAM and CNFETs." Thesis, Massachusetts Institute of Technology, 2019. https://hdl.handle.net/1721.1/122693.

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This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2019
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 49-50).
Next-generation applications require processing on massive amount of data in real-time, exceeding the capabilities of electronic systems today. This has spurred research in a wide-range of areas: from new devices to replace silicon-based field-effect transistors (FETs) to new circuit and system architectures with fine-grained and dense integration of logic and memory. However, isolated improvements in just one area is insufficient. Rather, enabling these next-generation applications will require combining benefits across all levels of the computing stack: leveraging new devices to realize new circuits and architectures. For instance, carbon nanotube (CNT) field-effect transistors (CNFETs) for logic and Resistive Random-Access Memory (RRAM) for memory are two promising emerging nanotechnologies for energy-efficient electronics. However, CNFETs suffer from inherent imperfections (such as of metallic CNTs, m-CNTs), which have prohibited realizing large-scale CNFET circuits in the past. This work proposes a circuit design technique that integrates and combines the benefits of both CNFETs with RRAM to realize three-dimensional (3D) circuits that are immune to m-CNTs. Leveraging this technique, we show the first experimental demonstration of CNFET-based analog mixed-signal circuits.
by Aya G. Amer.
S.M.
S.M. Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science
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Alayan, Mouhamad. "Étude des mémoires résistives (RRAM) à base d’HfO2 : caractérisation et modélisation de la fiabilité des cellules mémoire et des nouveaux dispositifs d'accès (Sélecteurs)." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT032/document.

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L'écart de vitesse entre le processeur et la mémoire vive est devenu un point faible pour les performances des systèmes. En raison de ces limitations, de nombreuses mémoires émergentes ont été proposées comme solutions alternatives à ces problèmes existant dans la hiérarchie mémoire. Les mémoires résistives (RRAM) sont considérées comme des candidats pour la « storage class memory » (SCM), les mémoires non volatiles embarquées (eNVM), et les systèmes neuromorphique. Cependant, les problèmes de fiabilité tels que la rétention de données sont encore en cours d'amélioration. De plus, pour obtenir des matrices mémoires de grande densité, la RRAM a besoin des sélecteurs qui seront intégrer en série avec elle dans une architecture un-sélecteur une-résistance (1S1R). Le sélecteur est nécessaire avec le point mémoire pour éliminer les problèmes des courants de fuite, qui gênent le bon fonctionnement de la matrice mémoire dans des architectures crossbar et verticales 3D.Dans cette thèse, notre objectif principal est de traiter les défis ci-dessus. Notre travail peut être divisé en deux parties principales : i) l'étude de la fiabilité des cellules RRAM basées sur HfO2 et ii) la caractérisation des opérations de base et des performances des cellules RRAM basées sur HfO2 et qui sont co-intégrées avec deux types différents des sélecteurs. Pour la partie fiabilité, nous avons étudié les effets du dopage aluminium (Al) sur la rétention de données des cellules RRAM à base de HfO2. Des dispositifs à simple et double couche avec différentes concentrations d'aluminium ont été fabriqués et testés. A partir des comportements électriques macroscopiques, comme la dégradation du diélectrique en fonction du temps (TDDB) et l’opération de forming avec des rampes de tension, on a extrait des propriétés microscopiques des matériaux tels que l'énergie d'activation nécessaire pour la rupture d’une liaison chimique à champ nul et le moment dipolaire des liaisons dans les matériaux testés. En utilisant ces paramètres microscopiques nous avons effectué tout au long de ce travail des simulations physiques pour comprendre les dynamiques de l’opération de forming ainsi que les mécanismes physiques impliqués pendant les opérations du dispositif mémoire. Deuxièmement, nous avons étudié l'immunité aux rayonnements de la RRAM à base de HfO2 pour les applications spatiales. Nos dispositifs RRAM ont été exposés à une énergie de 266 MeV d'ions lourds d'iode. Des analyses pré- et post-exposition ont été effectuées sur les états de la mémoire et les tensions de programmation pour étudier les effets de l'irradiation sur les caractéristiques du dispositif mémoire.Dans la partie des dispositifs d’accès, nous avons évalué deux types différents des sélecteurs. Une forte non-linéarité dans les caractéristiques courant / tension est obligatoire pour effectuer une lecture précise et une écriture à faible consommation. Dans le premier dispositif étudié, la sélectivité est introduite en ajoutant une couche d'oxyde dans l’empilement mémoire et qui agit comme une barrière tunnel. Le principal avantage de cette méthode est la facilité d’intégration de la barrière tunnel, par contre elle souffre d'une faible sélectivité (~ 10) et d'un faible courant de programmation qui dégrade la rétention de données. Deuxièmement, on a co-intégré avec l’RRAM un sélecteur OTS et le dispositif 1S1R a été entièrement caractérisé. Le sélecteur OTS offre une plus grande sélectivité par rapport à la barrière tunnel avec les possibilités d'augmenter fortement cette sélectivité par l'ingénierie des matériaux chalcogénures. Plus de 106 cycles de lecture ont été obtenu pour les dispositifs 1S1R en utilisant une stratégie de lecture innovante que nous avons suggérée pour éviter les lectures perturbatrices et réduire la consommation d'énergie
The performance gaps in nowadays memory hierarchy on the first hand between processor and main memory, on the other hand between main memory and storage have become a bottleneck for system performances. Due to these limitations, many emerging memories have been proposed as alternative solutions to fill out such concerns. The emerging non-volatile resistive random-access memories (RRAM) are considered as strong candidates for storage class memory (SCM), embedded nonvolatile memories (eNVM), enhanced solid-state disks, and neuromorphic computing. However, reliability challenges such as RRAM thermal stability and resistance variability are still under improvement processes. In addition, to achieve high integration densities the RRAM needs two terminal selector devices in one-selector one-resistor (1S1R) serial cell. The BEOL selector device enables suppression of the parasitic leakage paths, which hinder memory array operation in crossbar and vertical 3D architectures.In this PhD, our main focus is to address and treat the above challenges. Here, the work can be divided into two main parts: i) the investigation of the reliability of HfO2 based RRAM cells and ii) the characterization of the basis memory operations and performances of HfO2 based RRAM cells co-integrated with two different back end of line (BEOL) selector technologies.For the reliability part, we have investigated the effects of aluminum (Al) doping on data retention of HfO2 based RRAM cells. Single and double layer devices with different aluminum concentration were fabricated and tested. From macroscopic electrical characteristics, like time dependent dielectric breakdown (TDDB) and ramped voltage forming, microscopic properties of the materials such as the activation energy to break a bond at zero field and the dipole moment of the bond were extracted. These parameters have been used to shed new light on the mechanisms governing the forming process by means of device level simulations. Second, we have addressed the radiation immunity of HfO2 based RRAM for possible space applications as well. Our RRAM devices were exposed to 266 MeV Iodine heavy ions energy. Pre- and post-exposure analysis were carried out on the memory states and the programming voltages to study the effects of the irradiation on the memory characteristics. Throughout this work, we have performed physics based simulations to understand the dynamics of the forming process as well as the physical mechanisms involved during the memory operations.For the access devices part, we have evaluated two different types of selectors. For accurate reading and low power writing a strong selectivity in the current/voltage characteristics is required. In the first studied device, the selectivity is introduced by adding an oxide tunnel barrier. The main advantage of this strategy is that it is easy to integrate, however it suffers of low selectivity (~10) and low programming current. Second, an OTS based selector co-integrated with HfO2 based RRAM was fully characterized. OTS selector provides higher selectivity compared to the oxide tunnel barrier with the possibilities to strongly increase this selectivity by material engineering. Over 106 read cycles have been achieved on our 1S1R devices using an innovative read strategy that we have suggested to prevent disruptive read and to reduce the power consumption
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Parreira, Pedro Miguel Raimundo. "Nanocharacterisation of zirconia based RRAM devices deposited via PLD." Thesis, University of Glasgow, 2015. http://theses.gla.ac.uk/6877/.

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With CMOS technology reaching fundamental scaling limitations, innovative data storage technologies have been a topic of great academic and industrial interest. Emerging technologies, not all based in semiconductors, that exploit new variables like spin, polarisation, phase and resistance, are being investigated for their feasibility as data storage devices. One very promising technology is resistive switching random-access memory (RRAM). In RRAM devices memory operation relies on the change in resistance of a metal-insulator-metal structure, typically induced by ion migration combined with redox processes. Here, RRAM devices based on amorphous and crystalline zirconia have been prepared by means of pulsed laser deposition (PLD). The thesis starts with an overview of the commissioning of a new PLD system, with a focus on characterisation of the laser ablation plume, reduction of the density of “droplets” and development of the optimal system parameters, like temperature, oxygen pressure and laser fluence, for the preparation of zirconia based RRAM devices. For both amorphous and crystalline devices, titanium was used as an active electrode as it promotes the introduction of oxygen vacancies which are responsible for inducing resistive switching. In addition, growth of epitaxial Nb doped strontium titanate (Nb:STO) via PLD was achieved, as the high temperatures used during growth hinder the use of metallic bottom electrodes. Both types of RRAM devices have good performance figures, with ON/OFF ratios of 1000 and 10000 and endurance of more than 10000 cycles. Conduction mechanisms point to two different types of resistive switching: insulator-to-metal transition and trapping and de-trapping at the metal-oxide interfaces. Surprisingly, both conduction mechanisms were found to coexists on amorphous devices. Scanning transmission electron microscopy and electron energy loss spectroscopy were used to investigate how interfaces can influence resistive switching. Results indicate that titanium, in addition to introducing oxygen vacancies, creates an ohmic interface with zirconia which forces the resistive switching to take place on the inert metal-oxide Schottky interface, which was not described so far.
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Ellis, Noah. "Design, fabrication, and characterization of nano-scale cross-point hafnium oxide-based resistive random access memory." Thesis, Georgia Institute of Technology, 2016. http://hdl.handle.net/1853/55038.

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Non-volatile memory (NVM) is a form of computer memory in which the logical value (1 or 0) of a bit is retained when the computer is in its’ powered off state. Flash memory is a major form of NVM found in many computer-based technologies today, from portable solid state drives to numerous types of electronic devices. The popularity of flash memory is due in part to the successful development and commercialization of the floating gate transistor. However, as the floating gate transistor reaches its’ limits of performance and scalability, viable alternatives are being aggressively researched and developed. One such alternative is a memristor-based memory application often referred to as ReRAM or RRAM (Resistive Random Access Memory). A memristor (memory resistor) is a passive circuit element that exhibits programmable resistance when subjected to appropriate current levels. A high resistance state in the memristor corresponds to a logical ‘0’, while the low resistance state corresponds to a logical ‘1’. One memristive system currently being actively investigated is the metal/metal oxide/metal material stack in which the metal layers serve as contact electrodes for the memristor with the metal oxide providing the variable resistance functionality. Application of an appropriate potential difference across the electrodes creates oxygen vacancies throughout the thickness of the metal oxide layer, resulting in the formation of filaments of metal ions which span the metal oxide, allowing for electronic conduction through the stack. Creation and disruption of the filaments correspond to low and high resistance states in the memristor, respectively. For some time now, HfO2 has been researched and developed to serve as a high-k material for use in high performance CMOS MOSFETs. As it happens, HfO2-based RRAM devices have proven themselves as viable candidates for NVM as well, demonstrating high switching speed (< 10 ns), large OFF/ON ratio (> 100), good endurance (> 106 cycles), long lifetime, and multi-bit storage capabilities. HfO2-based RRAM is also highly scalable, having been fabricated in cells as small as 10 x 10 nm2 while still maintaining good performance. Previous work examining switching properties of micron scale HfO2-based RRAM has been performed by the Vogel group. However, a viable process for fabrication of nano-scale RRAM is required in order to continue these studies. In this work, a fabrication process for nano-scale cross-point TiN/ HfO2/TiN RRAM devices will be developed and described. Materials processing challenges will be addressed. The switching performance of devices fabricated by this process will be compared to the performance of similar devices from the literature in order to confirm process viability.
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Hanna, Drew E. "Developing RRAM-Based Approaches for Security and Provisioning of ICs." University of Cincinnati / OhioLINK, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1617108121648124.

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7

Hijazi, Basma. "Design and optimization of low-power embedded resistive memory (RRAM)." Electronic Thesis or Diss., Aix-Marseille, 2020. http://www.theses.fr/2020AIXM0316.

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L’objectif de la thèse est de démontrer les avantages que peuvent apporter l’intégration de mémoires non volatiles résistives dans les applications embarquées basses consommation sur la base d’un circuit mémoire complet. Ces applications présentent des contraintes, largement supérieures aux contraintes habituelles, en termes d’ultra faible consommation et de sécurité (intégrité, confidentialité des données, notamment dans le domaine de l’e-santé). Un aspect important du travail de thèse est consacré à la fiabilité de ces mémoires aussi bien au niveau circuit qu’au niveau système. Cela passe par la mise en place de techniques de test embraquées au niveau circuit et l’utilisation de code de correcteurs d’erreurs niveau Système. Le sujet de thèse propose deux volets : il s'agit d'abord d'étudier les différentes cellules mémoires résistives les plus assujetties à une utilisation dans un système embarqué basse consommation. Le deuxième volet consistera à élaborer toute la circuiterie de mise en œuvre du plan mémoire construit à partir des cellules élémentaires. L’innovation apportée par cette étude est double : type de cellule mémoire étudié et l’évaluation de la fiabilité de ces mémoires
The objective of the thesis is to demonstrate the advantages that the integration of resistive non-volatile memories can bring in low-power on-board applications on the basis of a complete memory circuit. These applications present constraints, far greater than the usual ones, in terms of ultra-low consumption and security (integrity, data confidentiality, especially in the field of e-health). An important aspect of the thesis work is devoted to the reliability of these memories both at the circuit level and at the system level. This requires the implementation of embedded test techniques at the circuit level and the use of system level error correcting code. The thesis subject has two components: it is first of all to study the different resistive memory cells most subject to use in a low consumption on-board system. The second part will consist of developing all the circuitry for implementing the memory plane built from elementary cells. The innovation brought by this study is twofold: type of memory cell studied and the evaluation of the reliability of these memories
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Kwon, Jonghan. "Electron Microscopy Based Characterization of Resistive Switches." Research Showcase @ CMU, 2016. http://repository.cmu.edu/dissertations/701.

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Random Access Memory (RRAM) has emerged as a leading candidate for nonvolatile memory storage. RRAM devices typically consist of a metal/insulator/metal (MIM) structure and exhibit switching of the device resistivity state (low-to-high, highto- low) by application of electrical bias. It is now widely accepted that shunting and rupturing of local conductive paths (filaments) directly determines the resistance state. The size and composition of these filaments are very much an open question, but are usually attributed to high local concentrations of oxygen vacancies. Although there has been a huge body of research conducted in this field, the fundamental nature of the conductive path and basic switching/failure mechanisms are still under debate. This is largely due to a lack of structural analysis of existing filament size and composition in actual devices. Since the non-volatile nature and device reliability issues (i.e. retention and endurance) are directly related to the irreversible structural transformations in the device, microstructural characterization is essential for eventual commercialization of RRAM. In this study, I investigated oxygen vacancy defect dynamics under electric filed essential for resistive switching and aim to identify size, location, and chemical nature of the conductive filaments in RRAM devices by using a variety of devices and materials characterization methods: in situ transmission electron microscopy (TEM), highresolution TEM (HRTEM), scanning TEM (STEM)-electron energy loss spectroscopy (EELS), electron holography, rapid thermal annealing (RTA), transient thermometry, and electro-thermal simulation. I adopt an in situ electrical biasing TEM technique to study microstructural changes occurring during resistive switching using a model TiO2-based RRAM device, and confirmed the device is switchable inside of the TEM column. I observed extension and contraction of {011} and {121}-type Wadsley defects, crystallographic shear faults, associated with resistive switching. More specifically, emission and adsorption of oxygen vacancies under different polarity of electrical biases at the fault bounding dislocations were identified. The motion of Wadsley defects was used to track oxygen vacancy migration under electric field. Also, the microstructural changes that occur when the device experiences low electric field (~104 V/cm) was reported, akin to read disturb. Crossbar type RRAM device stacks consisting of TiN/a-HfAlOx/Hf/TiN were investigated to estimate filament size, filament temperature, and its chemical footprint using HRTEM, transient thermometry and numerical simulation. In each of the switched devices, a single crystallite ~ 8-16 nm in size embedded in an amorphous HfAlOx matrix was found. The HfAlOx crystallization temperature (Tc) of 850 K was determined by combining RTA and HRTEM imaging. In parallel, the filament size has been determined by transient thermometry. The temperature profile extracted from these measurements suggested that the peak filament temperature was > 1500 K at the center, with the hot zone (T > Tc = 850 K) extending to a radius of 7 nm around the filament. These results were consistent with the HRTEM observations of the crystallite size. The potential filament location (crystallite) in the switching devices was analyzed by STEM-EELS and identification of the filament chemical nature identification has been attempted.
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Nguyen, Thinh H. "Study of Reflection Coefficient in Different Resistive States of HfO2-based RRAM." University of Cincinnati / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1535702700125043.

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Kazar, Mendes Munique. "X-ray photoelectron spectroscopy investigations of resistive switching in Te-based CBRAMs." Thesis, Université Paris-Saclay (ComUE), 2018. http://www.theses.fr/2018SACLS285/document.

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Les mémoires à pont conducteur (CBRAM) sont une option actuellement étudiée pour la prochaine génération de mémoires non volatiles. Le stockage des données est basé sur la commutation de la résistivité entre les états de résistance élevée (HRS) et faible (LRS). Sous polarisation électrique, on suppose qu'un trajet conducteur est créé par la diffusion des ions de l'électrode active dans l'électrolyte solide. Récemment, une attention particulière a été portée sur les dispositifs contenant un élément semi-conducteur tel que le tellure, fonctionnant avec des courants réduits et présentant moins de défaillances de rétention. Dans ces « subquantum CBRAMs », le filament est censé contenir du tellure, ce qui donne une conductance de 1 atome (G₁atom) significativement réduite par rapport aux CBRAMs standard et permettant ainsi un fonctionnement à faible puissance. Dans cette thèse, nous utilisons la spectroscopie de photoélectrons par rayons X (XPS) pour étudier les réactions électrochimiques impliquées dans le mécanisme de commutation des CBRAMs à base de Al₂O ₃ avec des alliages ZrTe et TiTe comme électrode active. Deux méthodes sont utilisées: i) spectroscopie de photoélectrons par rayons X de haute énergie non destructive (HAXPES) pour étudier les interfaces critiques entre l'électrolyte (Al₂O ₃ ) et les électrodes supérieure et inférieure et ii) les faisceaux d'ions à agrégats gazeux (GCIB), une technique de pulvérisation qui conduit à une dégradation plus faible de la structure, avec un profilage en profondeur XPS pour évaluer les distributions des éléments en profondeur. Des mesures ToF-SIMS sont également effectuées pour obtenir des informations complémentaires sur la répartition en profondeur des éléments. Le but de cette thèse est de clarifier le mécanisme de changement de résistance et de comprendre les changements chimiques aux deux interfaces impliquées dans le processus de « forming » sous polarisation positive et négative ainsi que le mécanisme de « reset ». Pour cela, nous avons effectué une comparaison entre le dispositif vierge avec un état formé, i.e. l'échantillon après la première transition entre HRS et LRS et un état reset, i.e. l'échantillon après la première transition entre LRS et HRS.L'analyse du « forming » positif pour les dispositifs ZrTe / Al₂O ₃ a montré une libération de Te liée à l’oxydation de Zr due au piégeage de l'oxygène de l'Al₂O ₃ sous l’effet du champ électrique. D'autre part, pour les dispositifs TiTe / Al₂O ₃, la présence d'une couche importante d'oxyde de titane à l'interface avec l'électrolyte a provoqué une dégradation permanente de la cellule en polarisation positive. Pour le « forming » négatif, nos résultats montrent un mécanisme hybride, à savoir une combinaison de formation de lacunes d'oxygène dans l'oxyde provoquée par la migration de O2- entraîné par le champ électrique vers l'électrode inférieure et la libération de tellure pour former des filaments conducteurs. De plus, les résultats obtenus par profilométrie XPS et ToF-SIMS ont indiqué une possible diffusion de Te dans la couche d'Al₂O ₃. Lors du « reset », il y a une recombinaison partielle des ions oxygène avec les lacunes d'oxygène près de l'interface TiTe / AlAl₂O ₃ avec une perte de Te. Un mécanisme hybride a également été observé sur les dispositifs ZrTe / Al₂O ₃ pendant le « forming » négatif. En tenant compte du rôle important de la migration d'oxygène dans la formation / dissolution des filaments, nous discutons également des résultats obtenus par XPS avec polarisation électrique in- situ (sous ultravide) pour mieux comprendre le rôle de l'oxydation de surface et des interfaces dans la commutation résistive
Conducting bridging resistive random accessmemories (CBRAMs) are one option currently investigated for the next generation of non volatile memories. Data storage is based on switching the resistivity between high (HRS) and low (LRS) resistance states. Under electrical bias,a conductive path is assumed to be created by ions diffusion from the active electrode into the solid electrolyte. Recently, special attention has been drawn to devices containing an elemental semiconductor such as tellurium, operating with reduced currents and less retention failures. In these subquantum CBRAM cells, the filament is thought to contain tellurium , yielding a 1-atomconductance (G₁atom) significantly reduced compared to standard CBRAMs and thus allowing low power operation. In this thesis, we use X-rayphotoelectron spectroscopy (XPS) to learn about electrochemical reactions involved in the switching mechanism of Al₂O₃ based CBRAMswith ZrTe and TiTe alloys as active electrode. Two methods are used: i) non-destructive Hard X-ray photoelectron spectroscopy (HAXPES) to investigate the critical interfaces between the electrolyte (Al₂O₃) and the top and bottom electrodes and ii) Gas Cluster Ion Beams (GCIB), a sputtering technique that leads to lower structure degradation, combined with XPS depth profiling to evaluate chemical depth distributions. To FSIMS measurements are also performed to get complementary in-depth chemical information.The aim of this thesis is to clarify the driving mechanism and understand the chemical changes at both interfaces involved in the forming process under positive and negative polarization as well as the mechanism of the reset operation. For that,we performed a comparison between as-grown state, i.e. the pristine device with a formed state,i.e. the sample after the first transition between HRS and LRS, and reset state, i.e. the sample after the first transition between LRS and HRS.Conducting bridging resistive random access memories (CBRAMs) are one option currently investigated for the next generation of non-volatile memories. Data storage is based on switching the resistivity between high (HRS) and low (LRS) resistance states. Under electrical bias,a conductive path is assumed to be created byions diffusion from the active electrode into the solid electrolyte. Recently, special attention has been drawn to devices containing an elemental semiconductor such as tellurium, operating with reduced currents and less retention failures. In these subquantum CBRAM cells, the filament is thought to contain tellurium , yielding a 1-atom conductance (G₁atom) significantly reduced compared to standard CBRAMs and thus allowing low power operation. In this thesis, we use X-ray photoelectron spectroscopy (XPS) to learn about electrochemical reactions involved in the switching mechanism of Al₂O₃ based CBRAMs with ZrTe and TiTe alloys as active electrode. Twomethods are used: i) non-destructive Hard X-rayphotoelectron spectroscopy (HAXPES) toinvestigate the critical interfaces between the electrolyte (Al₂O₃) and the top and bottom electrodes and ii) Gas Cluster Ion Beams (GCIB), a sputtering technique that leads to lower structure degradation, combined with XPS depth profiling to evaluate chemical depth distributions. To FSIMS measurements are also performed to get complementary in-depth chemical information.The aim of this thesis is to clarify the driving mechanism and understand the chemical changes at both interfaces involved in the forming process under positive and negative polarization as well as the mechanism of the reset operation. For that,we performed a comparison between as-grown state, i.e. the pristine device with a formed state,i.e. the sample after the first transition between HRS and LRS, and reset state, i.e. the sample after the first transition between LRS and HRS
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Books on the topic "RRAM"

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Yu, Shimeng. Resistive Random Access Memory (RRAM). Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-031-02030-8.

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International Institute for Environment and Development. Sustainable Agriculture Programme., ed. RRA notes. London: IIED, 1989.

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International Institute for Environment and Development. Sustainable Agriculture Programme., ed. RRA notes. London: IIED, 1992.

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International Institute for Environment and Development. Sustainable Agriculture Programme., ed. RRA notes. London: IIED, 1991.

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International Institute for Environment and Development. Sustainable Agriculture Programme., ed. RRA notes. London: IIED, 1989.

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Museum of Contemporary Art (Sydney, N.S.W.), ed. Julie Rrap: Body double. Sydney: Museum of Contemporary Art, 2007.

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Conti, Philippe. Djelem, Djelem: Une enfance Rrom à Marseille. Marseille: Images en manoeuvres, 2007.

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Araniti, Mithat. Qyfyre te rrem voglit, katunar pri rrashbulle. [Albania?]: Botues Phoenix, 1996.

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Bangladesh Flood Action Plan. Environmental Study (Team) and Irrigation Support Project for Asia and the Near East., eds. Padma charland socio-economic RRA. Arlington, Viginia: Irrigation Support Project for Asia and the Near East, 1995.

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Bangladesh Flood Action Plan. Environmental Study (Team) and Irrigation Support Project for Asia and the Near East., eds. Ganges charland socio-economic RRA. Arlington, Virginia: Irrigation Support Project for Asia and the Near East, 1995.

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Book chapters on the topic "RRAM"

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Yu, Shimeng. "RRAM Array Architecture." In Resistive Random Access Memory (RRAM), 35–54. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-031-02030-8_4.

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Yu, Shimeng. "RRAM Characterization and Modeling." In Resistive Random Access Memory (RRAM), 21–34. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-031-02030-8_3.

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Yu, Shimeng. "Introduction to RRAM Technology." In Resistive Random Access Memory (RRAM), 1–7. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-031-02030-8_1.

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Lacaze, Pierre Camille, and Jean-Christophe Lacroix. "Resistive Memory Systems (RRAM)." In Non-Volatile Memories, 165–99. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118789988.ch6.

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Wu, Huaqiang, Yan Liao, Bin Gao, Debanjan Jana, and He Qian. "RRAM Cross-Point Arrays." In 3D Flash Memories, 223–60. Dordrecht: Springer Netherlands, 2016. http://dx.doi.org/10.1007/978-94-017-7512-0_8.

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Luo, Qing. "Integration of 3D RRAM." In 3D Integration of Resistive Switching Memory, 39–46. Boca Raton: CRC Press, 2023. http://dx.doi.org/10.1201/9781003391586-4.

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Yu, Shimeng. "RRAM Device Fabrication and Performances." In Resistive Random Access Memory (RRAM), 9–19. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-031-02030-8_2.

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Knag, Phil, Siddharth Gaba, Wei Lu, and Zhengya Zhang. "RRAM Solutions for Stochastic Computing." In Stochastic Computing: Techniques and Applications, 153–64. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-03730-7_8.

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Zuolo, Lorenzo, Cristian Zambelli, Rino Micheloni, and Piero Olivo. "Simulations of RRAM-Based SSDs." In Solid-State-Drives (SSDs) Modeling, 123–38. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-51735-3_6.

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Mohamed, Ali, Ali AbuAssal, and Osama Rayis. "RRAM – Based - Equivalent Neural Network." In Intelligent and Fuzzy Techniques for Emerging Conditions and Digital Transformation, 339–43. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-85577-2_40.

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Conference papers on the topic "RRAM"

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Tosson, Amr M. S., Mohab Anis, and Lan Wei. "RRAM Refresh Circuit." In GLSVLSI '16: Great Lakes Symposium on VLSI 2016. New York, NY, USA: ACM, 2016. http://dx.doi.org/10.1145/2902961.2903017.

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Tuli, Shikhar, Marco Rios, Alexandre Levisse, and David Atienza ESL. "RRAM-VAC: A Variability-Aware Controller for RRAM-based Memory Architectures." In 2020 25th Asia and South Pacific Design Automation Conference (ASP-DAC). IEEE, 2020. http://dx.doi.org/10.1109/asp-dac47756.2020.9045220.

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Govoreanu, B., A. Ajaykumar, H. Lipowicz, Y. Y. Chen, J. C. Liu, R. Degraeve, L. Zhang, et al. "Performance and reliability of Ultra-Thin HfO2-based RRAM (UTO-RRAM)." In 2013 5th IEEE International Memory Workshop (IMW). IEEE, 2013. http://dx.doi.org/10.1109/imw.2013.6582095.

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Wang, Yu, Lixue Xia, Ming Cheng, Tianqi Tang, Boxun Li, and Huazhong Yang. "RRAM based learning acceleration." In the International Conference. New York, New York, USA: ACM Press, 2016. http://dx.doi.org/10.1145/2968455.2981124.

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Yao, Peng, Wenqiang Zhang, Meiran Zhao, Yudeng Lin, Wei Wu, Bin Gao, He Qian, and Huaqiang Wu. "Intelligent Computing with RRAM." In 2019 IEEE 11th International Memory Workshop (IMW). IEEE, 2019. http://dx.doi.org/10.1109/imw.2019.8739764.

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He, Yifan, Yuxuan Huang, Jinshan Yue, Wenyu Sun, Lu Zhang, and Yongpan Liu. "C-RRAM: A Fully Input Parallel Charge-Domain RRAM-based Computing-in-Memory Design with High Tolerance for RRAM Variations." In 2022 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE, 2022. http://dx.doi.org/10.1109/iscas48785.2022.9937513.

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Kumbhare, P., S. Chouhan, and U. Ganguly. "Pr1−xCaxMnO3 based selector, RRAM and self-selecting selectorless RRAM: A composition study." In 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548443.

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Xiaoyan Liu, Peng Huang, Bin Gao, Haitong Li, Yudi Zhao, and Jinfeng Kang. "Reliability simulation of TMO RRAM." In 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2015. http://dx.doi.org/10.1109/ipfa.2015.7224452.

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Veksler, D. "RRAM reliability discussion group summary." In 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW). IEEE, 2014. http://dx.doi.org/10.1109/iirw.2014.7049544.

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Arafin, Md Tanvir, and Gang Qu. "RRAM based lightweight user authentication." In 2015 IEEE/ACM International Conference on Computer-Aided Design (ICCAD). IEEE, 2015. http://dx.doi.org/10.1109/iccad.2015.7372561.

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Reports on the topic "RRAM"

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Chin, Matthew L., Matin Amani, Terrence P. O'Regan, A. G. Birdwell, and Madan Dubey. Effect of Atomic Layer Depositions (ALD)-Deposited Titanium Oxide (TiO2) Thickness on the Performance of Zr40Cu35Al15Ni10 (ZCAN)/TiO2/Indium (In)-Based Resistive Random Access Memory (RRAM) Structures. Fort Belvoir, VA: Defense Technical Information Center, August 2015. http://dx.doi.org/10.21236/ada623815.

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Osterheld, T. H., M. D. Allendorf, and C. F. Melius. Unimolecular decomposition of methyltrichlorosilane: RRKM calculations. Office of Scientific and Technical Information (OSTI), June 1993. http://dx.doi.org/10.2172/10172713.

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Cain, W. D., and W. L. Waddell. Rapid response manufacturing (RRM). Office of Scientific and Technical Information (OSTI), February 1997. http://dx.doi.org/10.2172/658223.

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Zhang, J., P. Bogenschutz, P. Ullrich, and P. Caldwell. SCREAM Beijing Flood RRM Technical Note. Office of Scientific and Technical Information (OSTI), January 2024. http://dx.doi.org/10.2172/2280906.

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Cain, W. D., and W. L. Waddell. Rapid Response Manufacturing (RRM). Final CRADA report. Office of Scientific and Technical Information (OSTI), August 1997. http://dx.doi.org/10.2172/671999.

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Cain, W. D., and W. L. Waddell. Rapid response manufacturing (RRM). Final CRADA report. Office of Scientific and Technical Information (OSTI), February 1998. http://dx.doi.org/10.2172/663252.

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Golaz, J. C., S. Xie, X. Zheng, W. Lin, T. Zhang, S. Endo, A. Vogelmann, et al. CMDV-RRM: Representation of Clouds and Convection across scales in E3SM. Office of Scientific and Technical Information (OSTI), July 2019. http://dx.doi.org/10.2172/1557030.

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Manka, R. H. National Academy of Sciences - National Research Council Resident Research Associateship Program (RRA). Fort Belvoir, VA: Defense Technical Information Center, March 1992. http://dx.doi.org/10.21236/ada250775.

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Zhang, Minghua. CMDV-RRM: Representation of Clouds and Convection Across Scales in E3SM (Final Report). Office of Scientific and Technical Information (OSTI), November 2020. http://dx.doi.org/10.2172/1721476.

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Tapiero, Anibal L., and Yudy Alejandra Guevara. Modelo epidemiológico de las enfermedades en clones de caucho de importancia económica en Colombia. Corporación Colombiana de Investigación Agropecuaria - AGROSAVIA, 2018. http://dx.doi.org/10.21930/agrosavia.poster.2018.23.

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El caucho natural (Hevea brasiliensis), tiene limitantes económicos importantes ocasionados por la incidencia de plagas y enfermedades. Entre estas últimas se destaca el Mal Suramericano de las Hojas (SALB por sus siglas en inglés) y Caída de las Hojas o Antracnosis por Colletotrichum spp., con diferente nivel de incidencia y severidad en varias zonas. El área sembrada en Colombia cuenta con aproximadamente 65.000 Ha (Censo Nacional Cauchero, 2016 citado por MINISTERIO de AGRICULTURA y DESARROLLO RURAL, 2016), distribuidas en 5 núcleos productivos. Parte del área se encuentra en Zona de escape al SALB con restricciones menores, en su mayor proporción con RRIM 600. En Zona de no-escape predomina el cultivo de clones brasileros (FX 3864 y FX 4098). Ante la reducida diversidad genética, particularmente en la Orinoquia (con aproximadamente 55% del total de caucho y más del 85% del área con RRIM 600) se planteó la necesidad de determinar y proponer programas de manejo integrado que permitan reducir los riesgos de pérdida económica ocasionados por la incidencia de enfermedades. Para el efecto se propuso determinar y analizar la importancia relativa de componentes de los 2 elementos cuya conjunción resultan en la ocurrencia y desarrollo de una epidemia: “potencialidad epidémica y condiciones ambientales favorables”, de los patosistemas más importantes en 4 núcleos del cultivo y establecer el modelo epidemiológico de las enfermedades de importancia económica de las enfermedades del caucho en Colombia.
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