Relevant bibliographies by topics / Rutile. Thin films. Metallic oxides

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Rutile. Thin films. Metallic oxides'

Author: Grafiati
Published: 4 June 2021
Last updated: 4 February 2022

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Journal articles on the topic "Rutile. Thin films. Metallic oxides"

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Jeong, Jaewoo, Nagaphani B. Aetukuri, Donata Passarello, Steven D. Conradson, Mahesh G. Samant, and Stuart S. P. Parkin. "Giant reversible, facet-dependent, structural changes in a correlated-electron insulator induced by ionic liquid gating." Proceedings of the National Academy of Sciences 112, no. 4 (January 12, 2015): 1013–18. http://dx.doi.org/10.1073/pnas.1419051112.

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The use of electric fields to alter the conductivity of correlated electron oxides is a powerful tool to probe their fundamental nature as well as for the possibility of developing novel electronic devices. Vanadium dioxide (VO2) is an archetypical correlated electron system that displays a temperature-controlled insulating to metal phase transition near room temperature. Recently, ionic liquid gating, which allows for very high electric fields, has been shown to induce a metallic state to low temperatures in the insulating phase of epitaxially grown thin films of VO2. Surprisingly, the entire film becomes electrically conducting. Here, we show, from in situ synchrotron X-ray diffraction and absorption experiments, that the whole film undergoes giant, structural changes on gating in which the lattice expands by up to ∼3% near room temperature, in contrast to the 10 times smaller (∼0.3%) contraction when the system is thermally metallized. Remarkably, these structural changes are fully reversible on reverse gating. Moreover, we find these structural changes and the concomitant metallization are highly dependent on the VO2 crystal facet, which we relate to the ease of electric-field–induced motion of oxygen ions along chains of edge-sharing VO6 octahedra that exist along the (rutile) c axis.
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Lee, Han-Seung, Jin-ho Park, Jitendra Kumar Singh, and Mohamed A. Ismail. "Deposition of Coating to Protect Waste Water Reservoir in Acidic Solution by Arc Thermal Spray Process." Advances in Materials Science and Engineering 2018 (2018): 1–13. http://dx.doi.org/10.1155/2018/4050175.

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The corrosion characteristics of 304 stainless steel (SS) and titanium (Ti) coatings deposited by the arc thermal spray process in pH 4 solution were assessed. The Ti-sprayed coating exhibits uniform, less porous, and adherent coating morphology compared to the SS-sprayed coating. The electrochemical study, that is, electrochemical impedance spectroscopy (EIS), revealed that as exposure periods to solution were increased, the polarization resistance (Rp) decreased and the charge transfer resistance (Rct) increased owing to corrosion of the metallic surface and simultaneously at the same time the deposition of oxide films/corrosion on the SS-sprayed surface, while Ti coating transformed unstable oxides into the stable phase. Potentiodynamic studies confirmed that both sprayed coatings exhibited passive tendency attributed due to the deposition of corrosion products on SS samples, whereas the Ti-sprayed sample formed passive oxide films. The Ti coating reduced the corrosion rate by more than six times compared to the SS coating after 312 h of exposure to sulfuric acid- (H2SO4-) contaminated water solution, that is, pH 4. Scanning electron microscope (SEM) results confirmed the uniform and globular morphology of the passive film on the Ti coating resulting in reduced corrosion. On the other hand, the corrosion products formed on SS-sprayed coating exhibit micropores with a net-like microstructure. X-ray diffraction (XRD) revealed the presence of the composite oxide film on Ti-sprayed samples and lepidocrocite (γ-FeOOH) on the SS-coated surface. The transformation of TiO and Ti3O into TiO2 (rutile and anatase) and Ti3O5 after 312 h of exposure to H2SO4 acid reveals the improved corrosion resistance properties of Ti-sprayed coating.
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Kaczmarek, Danuta, Jaroslaw Domaradzki, Damian Wojcieszak, Eugeniusz Prociow, Michal Mazur, Frank Placido, and Steffen Lapp. "Hardness of Nanocrystalline TiO2 Thin Films." Journal of Nano Research 18-19 (July 2012): 195–200. http://dx.doi.org/10.4028/www.scientific.net/jnanor.18-19.195.

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In this work results of hardness investigations of nanocrystalline TiO2 thin films are presented. Thin films were prepared by low pressure hot target reactive sputtering (LPHTRS) and high energy reactive magnetron sputtering (HERMS). In both processes a metallic Ti target was sputtered under low pressure of oxygen working gas. After deposition by LPHTRS TiO2 thin films with anatase structure were obtained and after additional post-process annealing at 1070 K, these films recrystallized into the rutile structure. Annealing also resulted in an increase of average crystallite size from 33 nm (for anatase) to 74 nm (for rutile). The HERMS process is a modification of the LPHTRS process with the addition of an increased amplitude of unipolar voltage pulses, powering the magnetron. This effectively increases the total energy of the depositing particles at the substrate and allows dense, nanocrystalline (8.7 nm crystallites in size) TiO2 thin film with the rutile structure to be formed directly. The hardness of the films was determined by nanoindentation. The results showed that the nanocrystalline TiO2-rutile thin film as-deposited using HERMS had high hardness (14.3 GPa), while the TiO2-anatase films as-deposited by LPHTRS, were 4-times lower (3.5 GPa). For LPHTRS films recrystallized by additional annealing, the change in thin film structure from anatase to rutile resulted in an increase of film hardness from 3.5 GPa to only 7.9 GPa. The HERMS process can therefore produce the TiO2 rutile structure directly, with hardness that is 2 times greater than rutile films produced by LPHTRS with additional annealing step.
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Asano, Hidefumi, Norihito Koduka, Mikito Sugiyama, and Masaaki Matsui. "Growth and Properties of Half-Metallic Double Perovskite Thin Films." Materials Science Forum 475-479 (January 2005): 2197–202. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.2197.

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Ferromagnetic oxides with ordered double-perovskites Sr2FeMoO6 and Sr2CrReO6 are known to be in a half-metallic ground state with high Curie temperatures Tc, and hence one of the promising materials for spin electronics. This paper reports epitaxial growth and micro-structural, magnetic, and electrical characterization of thin films of these oxides. It is shown that a coherent growth without strain relaxation, which is accomplished by the use of substrate or buffer layers with a small (0.1%) lattice match, is essential to obtain high quality films with both atomically flat surface and high magnetization values expected for their half-metallicity
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Uttiya, Sureeporn, Ornella Cavalleri, Michele Biasotti, Marcella Pani, Maria Maddalena Carnasciali, Daniele Caviglia, Lorenzo Mattera, and Maurizio Canepa. "Mesoporous Titanium Dioxide Thin Films on Quartz via Electrochemical Anodisation Process." Advanced Materials Research 1119 (July 2015): 456–60. http://dx.doi.org/10.4028/www.scientific.net/amr.1119.456.

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Titanium dioxide (TiO2) thin films were prepared by means of electrochemical anodisation or anodic spark deposition (ASD) from thin and flat metallic titanium (Ti) films pre-deposited on high quality quartz substrates by electron beam evaporation. AFM analysis indicates the formation of uniform mesoporous layers and a definite increase about 50% of the film thickness upon anodisation and about 90% upon annealing. Anodised mesoporous TiO2films have been characterized by Raman spectroscopy, which indicates the presence of well-defined peaks related to anatase structure. Phase transformation from anatase to rutile was observed after annealing at temperatures up to 900°C for 3h.
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Guo, Q., S. Lee, and D. W. Goodman. "Vanadium oxides thin films grown on rutile TiO2(110)-(1×1) and (1×2) surfaces." Surface Science 437, no. 1-2 (August 1999): 38–48. http://dx.doi.org/10.1016/s0039-6028(99)00674-3.

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Unal, Ugur, Dan Matsuo, Yasumichi Matsumoto, and Michio Koinuma. "Thermally-induced phase changes in electrophoretically deposited titanate and niobate layered oxides." Journal of Materials Research 17, no. 10 (October 2002): 2644–51. http://dx.doi.org/10.1557/jmr.2002.0384.

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Thin films of CsxTi(2−x/4)□x/4O4 (CsTiO), K4Nb6O17 (KNbO), and their proton-exchanged forms, i.e., HxTi(2−x/4)□x/4O4 (HTiO) and H4Nb6O17 (HNbO), were prepared using the electrophoretic deposition technique. The amine- and thiol-intercalated HTiO and HNbO films were prepared by exfoliation of powders in aqueous ethylamine and (mercaptoethyl)amine hydrochloride solutions, respectively. The heat-induced phase transformation of these films was investigated. Evidently, the CsTiO and thiol-intercalated HTiO films underwent phase transformation at relatively high temperatures due to the cations within the interlayer. CsTiO and HTiO films lost their layered structure and transformed, in turn, into the anatase and rutile phases with increasing temperature. However, the intercalated samples exhibited unidentified phases at in-between temperatures, eventually transforming to TiO2. The KNbO film transformed into a layered KNb3O8 structure, while the HNbO lost its layered structure completely to form Nb2O5. Thus, the phase change depended on the modification of the interlayers, and the heat treatment resulted in thin films with new crystal structures for the amine- and thiol-intercalated samples.
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Becker, Martin, Angelika Polity, Davar Feili, and Bruno K. Meyer. "Deposition of tin oxides by Ion-Beam-Sputtering." MRS Proceedings 1494 (2012): 153–58. http://dx.doi.org/10.1557/opl.2012.1650.

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ABSTRACTSynthesis of both p-type and n-type oxide semiconductors is required to develop oxide-based electronic devices. Tin monoxide (SnO) recently has received increasing attention as an alternative p-type oxide semiconductor because it is a simple binary compound consisting of abundant elements. Another phase of the tin oxygen system, SnO2, is of great technological interest as transparent electrodes and as heat-reflecting filters. The preparation of tin oxide thin films has been performed by many different procedures. Radio-frequency (RF) ion-thrusters, as designed for propulsion applications, are also qualified for thin film deposition and surface etching, because different gas mixtures, extraction voltages and RF power can be applied. Tin oxide thin films were grown by ion beam sputtering (IBS) using a 3” metallic tin target. Different aspects of the thin film growth and properties of the tin oxide phases were investigated in relation to flux of oxygen fed into the gas discharge in the ion thruster. Results on thin film growth by IBS will be presented, structural, vibrational and optical properties of the films will be discussed.
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Vook, R. W., T. V. Rao, T. Swirbel, J. Bucci, and W. Meyer. "Thin films for radiation control in boiling water nuclear reactors." Proceedings, annual meeting, Electron Microscopy Society of America 44 (August 1986): 520–21. http://dx.doi.org/10.1017/s0424820100144115.

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Boiling water nuclear reactors (BWR's) experience radioactive film buildup on the inner walls of their out-of-core stainless steel (S.S.) cooling water pipes. These films consist of various oxides of Fe, Cr, and Ni, and contain small amounts of radioactive Co-60. As a result the pipes must be decontaminated or replaced periodically. Efforts are currently being made to passivate these S.S. surfaces so as to reduce the rate of radiation buildup. In the present work, the effects of various protective metallic thin film coatings on the morphology of the radioactive oxide film grown in a simulated BWR test loop are reported.
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Mazur, Michal, Danuta Kaczmarek, Eugeniusz Prociow, Jaroslaw Domaradzki, Damian Wojcieszak, and Jakub Bocheński. "Investigation of structural, optical and electrical properties of (Ti,Nb)Ox thin films deposited by high energy reactive magnetron sputtering." Materials Science-Poland 32, no. 3 (September 1, 2014): 457–64. http://dx.doi.org/10.2478/s13536-013-0195-4.

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AbstractIn this work the results of investigations of the titanium-niobium oxides thin films have been reported. The thin films were manufactured with the aid of a modified reactive magnetron sputtering process. The aim of the research was the analysis of structural, optical and electrical properties of the deposited thin films. Additionally, the influence of post-process annealing on the properties of studied coatings has been presented. The as-deposited coatings were amorphous, while annealing at 873 K caused a structural change to the mixture of TiO2 anatase-rutile phases. The prepared thin films exhibited good transparency with transmission level of ca. 50 % and low resistivity varying from 2 Ωcm to 5×10−2 Ωcm, depending on the time and temperature of annealing. What is worth to emphasize, the sign of Seebeck coefficient changed after the annealing process from the electron to hole type electrical conduction.
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Dissertations / Theses on the topic "Rutile. Thin films. Metallic oxides"

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Beach, Geoffrey S. D. "The COxFe₁₀₀₋x metal/native oxide multilayer /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC IP addresses, 2003. http://wwwlib.umi.com/cr/ucsd/fullcit?p3090452.

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Shang, Yajuan. "Preparation and characterization of praseodymium oxide films and powders." Thesis, University of North Texas, 2004. https://digital.library.unt.edu/ark:/67531/metadc4450/.

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Nanocrystalline praseodymium oxide films have been successfully generated on stainless steel substrates. The electrochemical deposition was performed in the cathode compartment of a divided electrochemical cell with a regular three-electrode configuration. The green films obtained by electrodeposition were then annealed at high temperatures for 1-3 hours. X-ray diffraction revealed the fluorite structure of Pr6O11 and the crystallite size was calculated. X-ray photoelectron spectroscopy was employed to study the composition of the oxide films and also the oxidation state of Pr. Scanning electron microscopy was utilized to study the surface texture and microstructure of deposits. Fourier transform infrared spectrometery was used to investigate the composition of the films. The effects of different conditions on the green films were also studied such as different pH values of the electrolyte solution, different deposition modes, different supporting electrolytes and different applied current densities. Sintering experiments were conducted to investigate the properties of the green films. Praseodymium oxide powders were also successfully prepared by combining electrochemical methods with sintering processes. The praseodymium oxide powders were characterized by X-ray diffraction and Fourier transform infrared spectroscopy. The crystallite sizes of the powders were evaluated.
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Hauser, Adam J. "Unlocking the potential of half-metallic Sr2FeMoO6 thin films through controlled stoichiometry and double perovskite ordering." The Ohio State University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=osu1291048729.

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Murugavel, P. "Thin Films And Sub-Micron Powders Of Complex Metal Oxides Prepared By Nebulized Spray Pyrolysis And Brillouin Scattering Investigations Of Phase Transitions In Solids." Thesis, Indian Institute of Science, 2000. http://hdl.handle.net/2005/217.

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The thesis consists of two parts. Part 1 deals with the preparation of thin films and sub-micron powders of complex metal oxides by nebulized spray pyrolysis (NSP) and Part 2 consists of Brillouin scattering studies of solid materials exhibiting interesting phase transitions. The simple technique of NSP has been employed to prepare thin films of A12O3, PbTiO3, Pb(Zr0.5Ti0.5)O3 (PZT) and PbZrO3 on single crystal substrate. The films were characterized by various techniques for their composition, structure, morphology and dielectric properties. Ferroelectric (FE) films of the configuration FE/LaNiO3/SiO2/Si (FE = PbTiO3 and PZT), wherein the LaNiO3 barrier electrode was also deposited on the SiO2/Si substrate by NSP, have been investigated. The films exhibit satisfactory ferroelectric properties. PbZrO3 films deposited on LaNiO3/SiO2/Si substrates show good features, including a reversible AFE ↔ FE transition. Sub-micron particles of TiO2, ZrO2, Pb(Zr0.5Ti0.5)O3, Al2O3, S1O2 and mullite have been prepared by NSP and characterized by various techniques. Brillouin scattering has been used, for the first time, not only to characterize the Peierls transition but also the incommensurate to commensurate transition in the one-dimensional blue bronze, K0.3M0O3. The charge density wave transition in NbSe2 has also been investigated by Brillouin scattering. The charge ordering and antiferromag-netic transitions in single crystals of the rare earth manganates, Nd0.5Ca0.5MnO3 and Pr0.63Ca 0.37MnO3, have been investigated by Brillouin scattering. It is noteworthy that the temperature variation of the Brillouin shift and intensity parallel to that of the magnetization, thereby throwing light on magnetic excitations in charge-ordered state. Brillouin scattering investigations of C60 and C70 films have yielded values of the elastic moduli.
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Qin, Feili. "Metal Oxide Reactions in Complex Environments: High Electric Fields and Pressures above Ultrahigh Vacuum." Thesis, University of North Texas, 2005. https://digital.library.unt.edu/ark:/67531/metadc4843/.

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Metal oxide reactions at metal oxide surfaces or at metal-metal oxide interfaces are of exceptional significance in areas such as catalysis, micro- and nanoelectronics, chemical sensors, and catalysis. Such reactions are frequently complicated by the presence of high electric fields and/or H2O-containing environments. The focus of this research was to understand (1) the iron oxide growth mechanism on Fe(111) at 300 K and 500 K together with the effect of high electric fields on these iron oxide films, and (2) the growth of alumina films on two faces of Ni3Al single crystal and the interaction of the resulting films with water vapor under non-UHV conditions. These studies were conducted with AES, LEED, and STM. XPS was also employed in the second study. Oxidation of Fe(111) at 300 K resulted in the formation of Fe2O3 and Fe3O4. The substrate is uniformly covered with an oxide film with relatively small oxide islands, i.e. 5-15 nm in width. At 500 K, Fe3O4 is the predominant oxide phase formed, and the growth of oxide is not uniform, but occurs as large islands (100 - 300 nm in width) interspersed with patches of uncovered substrate. Under the stress of STM induced high electric fields, dielectric breakdown of the iron oxide films formed at 300 K occurs at a critical bias voltage of 3.8 ± 0.5 V at varying field strengths. No reproducible result was obtained from the high field stress studies of the iron oxide formed at 500 K. Ni3Al(110) and Ni3Al(111) were oxidized at 900 K and 300 K, respectively. Annealing at 1100 K was required to order the alumina films in both cases. The results demonstrate that the structure of the 7 Å alumina films on Ni3Al(110) is k-like, which is in good agreement with the DFT calculations. Al2O3/Ni3Al(111) (γ'-phase) and Al2O3/Ni3Al(110) (κ-phase) films undergo drastic reorganization and reconstruction, and the eventual loss of all long-range order upon exposure to H2O pressure > 10-5 Torr. Al2O3/Ni3Al(110) film is significantly more sensitive to H2O vapor than the Al2O3/Ni3Al(111) film, and this may be due to the incommensurate nature of the oxide/Ni3Al(110) interface. STM measurements indicate that this effect is pressure- rather than exposure- dependent, and that the oxide instability is initiated at the oxide surface, rather than at the oxide/metal interface. The effect is not associated with formation of a surface hydroxide, yet is specific to H2O (similar O2 exposures have no effect).
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Cho, Youngnam. "Stabilization of rutile-related thin film on TiO₂ substrates /." 2002. http://www.library.umaine.edu/theses/theses.asp?Cmd=abstract&ID=CHE2002-004.

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Satyalakshmi, K. M. "Studies On Superconucting, Metallic And Ferroelectric Oxide Thin Films And Their Heterostructures Grown By Pulsed Laser Deposition." Thesis, 1995. http://etd.iisc.ernet.in/handle/2005/2090.

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Hoshino, Ken. "Instability and temperature-dependence assessment of IGZO TFTs." Thesis, 2008. http://hdl.handle.net/1957/9726.

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Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is to provide detailed assessments of device stability, temperature dependence, and related phenomena for IGZO-based TFTs processed at temperatures between 200 °C and 300 °C. TFTs tested exhibit an almost rigid shift in log₁₀(I[subscript D]) – V[subscript GS] transfer curves in which the turn-on voltage, V[subscript ON], moves to a more positive gate voltage with increasing stress time during constant-voltage bias-stress testing of IGZO TFTs. TFT stability is improved as the post-deposition annealing temperature increases over the temperature range of 200 – 300 ºC. The turn-on voltage shift induced by constant-voltage bias-stressing is at least partially reversible; V[subscript ON] tends to recover towards its initial value of V[subscript ON] if the TFT is left unbiased in the dark for a prolonged period of time and better recovery is observed for a longer recovery period. V[subscript ON] for a TFT can be set equal to zero after bias-stress testing if the TFT electrodes are grounded and the TFT is maintained in the dark for a prolonged period of time. Attempts to accelerate the recovery process by application of a negative gate bias at elevated temperature (i.e., 100 ºC) were unsuccessful, resulting in severely degraded subthreshold swing. An almost rigid log₁₀(I[subscript D]) – V[subscript GS] transfer curve shift to a lower (more negative) V[subscript ON] with increasing temperature is observed in the range of –50 °C to +50 °C, except for a TFT with an initial V[subscript ON] equal to zero, in which case the log₁₀(ID) – V[subscript GS] transfer curve is temperature-independent. A more detailed temperature-dependence assessment, however, indicates that the log₁₀(I[subscript D]) – V[subscript GS] transfer curve shift is not exactly rigid since the mobility is found to increase slightly with increasing temperature. A noticeable anomaly is observed in certain log₁₀(I[subscript D]) – VGS transfer curves, especially when obtained at elevated temperature (e.g., 30 and 50 ºC), in which I[subscript D] decreases precipitously near zero volts in the positive gate voltage sweep. This anomaly is attributed to a gate-voltage-step-involved detrapping and subsequent retrapping of electrons in the accumulation channel and/or channel/gate insulator interface. In fact, all IGZO TFT stability and temperature-dependence trends are attributed to channel interface and/or channel bulk trapping/detrapping.
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Monti, Mark Charles. "The effect of epitaxial strain and R³+ magnetism on the interfaces between polar perovskites and SrTiO₃." Thesis, 2011. http://hdl.handle.net/2152/ETD-UT-2011-05-3231.

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We have embarked on a systematic study of novel charge states at oxide interfaces. We have performed pulsed laser deposition (PLD) growth of epitaxial oxide thin films on single crystal oxide substrates. We studied the effects of epitaxial strain and rare-earth composition of the metal oxide thin films. We have successfully created TiO₂ terminated SrTiO₃ (STO) substrates and have grown epitaxial thin films of LaAlO₃ (LAO), LaGaO₃ (LGO), and RAlO₃ on STO using a KrF pulsed excimer laser. Current work emphasizes the importance of understanding the effect of both epitaxial strain and R³+ magnetism on the interface between RAlO₃ and STO. We have demonstrated that the interfaces between LAO/STO and LGO/STO are metallic with carrier concentrations of 1.1 x 10¹⁴ cm[superscript -2] and 4.5 x 10¹⁴ cm[superscript −2], respectively. Rare-earth aluminate films, RAlO₃, with R = Ce, Pr, Nd, Sm, Eu, Gd, and Tb, were also grown on STO. Conducting interfaces were found for R = Pr, Nd and Gd, and the results indicate that for R [does not equal] La the magnetic nature of the R³+ ion causes increased scattering with decreasing temperature that is modeled by the Kondo effect. Epitaxial strain between the polar RAlO₃ films and STO appears to play a crucial role in the transport properties of the metallic interface, where a decrease in the R³+ ion size causes an increase in sheet resistance and an increase in the onset temperatures for increased scattering.
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Books on the topic "Rutile. Thin films. Metallic oxides"

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Korotcenkov, Ghenadii, and Ashrit Pandurang. Transition Metal Oxide Thin Film-Based Chromogenics and Devices. Elsevier, 2017.

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Korotcenkov, Ghenadii, Nini Pryds, and Vicenzo Esposito. Metal Oxide-Based Thin Film Structures: Formation, Characterization and Application of Interface-Based Phenomena. Elsevier Science & Technology Books, 2017.

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Wan, Dongyang. Crystal Structure,Electronic and Optical Properties of Epitaxial Alkaline Earth Niobate Thin Films. Springer, 2018.

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Wan, Dongyang. Crystal Structure,Electronic and Optical Properties of Epitaxial Alkaline Earth Niobate Thin Films. Springer, 2017.

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Ivan, Nedkov, Ausloos M. 1943-, and NATO Advanced Research Workshop on Ferrimagnetic Nano-crystalline and Thin Film Magnetooptical and Microwave Materials (1998 : Sozopol, Bulgaria), eds. Nano-crystalline and thin film mangnetic oxides. Dordrecht: Kluwer Academic Publishers, 1999.

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Ogale, Satishchandra B. Thin Films and Heterostructures for Oxide Electronics (Multifunctional Thin Film Series). Springer, 2005.

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Materials Science of Novel Oxide-Based Electronics: Volume 623. University of Cambridge ESOL Examinations, 2014.

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(Editor), David S. Ginley, John D. Perkins (Editor), Hiroshi Kawazoe (Editor), Dennis M. Newns (Editor), and Audrey B. Kozyrev (Editor), eds. Materials Science of Novel Oxide-Based Electronics: Symposium Held April 24-27, 2000, in San Francisco, California, U.S.A (Materials Research Society Symposia Proceedings, V. 623.). Materials Research Society, 2000.

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Nano-Crystalline and Thin Film Magnetic Oxides (NATO Science Partnership Sub-Series: 3:). Springer, 1999.

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Transport and Microstructural Phenomena in Oxide Electronics: Symposium Held April 16-20, 2001, San Francisco, California, U.S.A (Materials Research Society Symposia Proceedings, V. 666.). Materials Research Society, 2001.

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Book chapters on the topic "Rutile. Thin films. Metallic oxides"

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Netzer, Falko P., and Claudine Noguera. "Surface chemistry, energy conversion, and related applications." In Oxide Thin Films and Nanostructures, 225–62. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780198834618.003.0008.

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Oxide nanomaterials have an impact in many interdisciplinary fields of the emerging nanotechnologies as reported here. They are components of heterogeneous catalyst systems with specific features that are outlined. In photocatalysis, chemical reactions are catalytically enabled by photon-energy conversion: oxide photocatalysts are prominent and discussed in relation to the photochemical water splitting reaction. Solid oxide fuel cells are promising energy sources, in which oxide nanomaterials are expected to boost further progress. Solar energy materials are elements of the “green chemistry” revolution for energy saving: the chromogenic functionality of oxide nanolayers with use in advanced fenestration is introduced. The formation and structure of corrosion protective nanolayer oxides, which is vital for the everyday use of metallic components, are examined. Biotechnology applications of oxide nanostructures comprise their biocompatibility, antibacterial properties, theranostic systems as well as biosensor platforms. An interesting bioapplication of ferroelectric oxide thin films is reported.
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"Oxynitrides and Oxides Deposited by Cathodic Vacuum Arc." In Metallic Oxynitride Thin Films by Reactive Sputtering and Related Deposition Methods: Process, Properties and Applications, edited by Jörg Vetter, 265–84. BENTHAM SCIENCE PUBLISHERS, 2013. http://dx.doi.org/10.2174/9781608051564113010015.

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Conference papers on the topic "Rutile. Thin films. Metallic oxides"

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Guler, Mehmet Oguz, Mirac Alaf, Deniz Gultekin, Hatem Akbulut, and Ahmet Alp. "Oxidation Kinetics of Nano Crystalline Tin Oxide Conductive Thin Films." In ASME 2008 2nd Multifunctional Nanocomposites and Nanomaterials International Conference. ASMEDC, 2008. http://dx.doi.org/10.1115/mn2008-47072.

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Tin oxide was the first transparent conductor to have achieved significant commercialization. SnO2 is an n-type semiconductor with an optical band gap of about 3.6 eV in poly crystalline form. One of the main reasons for the wide use is its rather desirable characteristic of having both, high optical transmittance and high electrical conductivity. Under optimum deposition conditions, tin oxide crystallizes in the tetragonal (rutile) structure. In this study, nano crystalline thin oxide conductive thin films has been manufactured by thermal evaporation techniques onto steel substrates using metallic tin targets and oxidation kinetics have been studied after D.C. plasma oxidation by using XRD (X-Ray Diffraction). The activation energy of SnO and SnO2 from Sn phase transformations has also been studied.
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