Relevant bibliographies by topics / Sb2Te3

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  2. Dissertations / Theses
  3. Books
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  5. Conference papers

Academic literature on the topic 'Sb2Te3'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 September 2023

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Journal articles on the topic "Sb2Te3"

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Verma, Rakesh, Chae-Eun Moon, and Chan-Jin Park. "Antimony Telluride Nanocomposite As a High Performance Anode for Rechargeable Potassium-Ion Batteries." ECS Meeting Abstracts MA2022-02, no. 4 (October 9, 2022): 399. http://dx.doi.org/10.1149/ma2022-024399mtgabs.

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The development of high-capacity and low-cost energy storage systems are a top priority in electric vehicles and smart grids. Room temperature potassium-ion batteries (PIBs), which have the advantages of high theoretical capacity, abundant earth reserves, and low potassium costs, have recently emerged as an appealing alternative to traditional lithium-ion batteries (LIBs). In particular, finding advanced anode materials with suitable operation potential and high capacity is of significance for next-generation PIBs. In this regard, Sb-based materials have recently gained popularity as promising anode materials for batteries in terms of their suitable working potential, high density, and theoretical capacity. Among them, Sb2Te3 has a much higher density (6.66 g/cm3) than other Sb-based materials such as Sb2O3, Sb2S3, and Sb2Se3. This suggests that Sb2Te3 can have a high theoretical capacity. In addition, Te exhibits a higher conductivity than S or Se. Accordingly, the Sb2Te3 is appealing as an ideal anode for PIBs. Unfortunately, the Sb2Se3 has poor cycling stability and rate performances, which is primarily owing to the large volume change during alloying and dealloying. In this study, using a simple hydrothermal strategy, we synthesized a carbon-coated Sb2Te3 nanocomposite (Sb2Te3@C). In the novel design, the Sb2Te3@C nanocomposite is compactly encapsulated by a uniform carbon layer, which effectively relieves structural stress leading to preventing structural pulverization and stabilize the solid electrolyte interface layer. As expected with this optimal design, the Sb2Te3@C nanocomposite electrode performed nicely suitable for PIBs. In addition, the effect of the alloying/dealloying process on the crystal structure of Sb2Te3@C was investigated using in- situ/ex-situ XRD patterns recorded at various stages of discharge and charge to clarify the alloying mechanism. Furthermore, a full cell made up of a Sb2Te3@C anode and a potassium Prussian blue type cathode also exhibited successful operation.
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Volodin, V. N., S. A. Trebukhov, A. V. Nitsenko, N. M. Burabayeva, and X. A. Linnik. "Distribution of antimonium chalcogenides under conditions of vacuum thermal processing of mattes." Kompleksnoe Ispolʹzovanie Mineralʹnogo syrʹâ/Complex Use of Mineral Resources/Mineraldik Shikisattardy Keshendi Paidalanu 326, no. 3 (February 24, 2023): 88–95. http://dx.doi.org/10.31643/2023/6445.32.

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It was established based on the analysis of the results of published works and the results obtained by the authors that there is no information on the behavior and distribution of antimony chalcogenides - Sb2S3, Sb2Se3, Sb2Te3, as well as double systems - Sb2S3-Sb2Se3, Sb2S3-Sb2Te3 and Sb2Se3-Sb2Te3 under the vacuum processing conditions for polymetallic mattes performed at 1100-1250 °C and a vacuum of 15 - 0.7 kPa. It was found based on the saturated vapor pressure values for monochalcogenides that the vapor pressure of free antimony sulfide will be 58.95 kPa at 1100 °C, i.e. the lower limit of the technological interval, which indicates its complete transfer to the vapor phase when the mattes are evacuated; the vapor pressure of free antimony selenide at 1100 °C exceeds the atmospheric pressure value (101.3 kPa), and Sb2Se3 would be completely extracted into the vapor phase in vacuum; the boiling point of liquid antimony telluride at atmospheric pressure corresponds to 971 °C, and it would be extracted into the vapor phase under the conditions of matte evacuation. The thermodynamic evaporation characteristics of antimony chalcogenides were found. It was concluded based on the location of the boundaries of the liquid and vapor phase coexistence fields that it is impossible to separate binary systems of antimony chalcogenides into separate compounds in the process of one evaporation cycle – condensation, in binary systems. Different effects of pressure reduction over melts were found. Lowering the pressure from atmospheric one to 0.7 kPa in Sb2S3-Sb2Se3 system did not change the position of the boundaries of the liquid and vapor fields (L + V) under the temperature; field width (L+V) decreases with decreasing pressure in Sb2S3-Sb2Te3 system; the field width first decreases with temperature, then increases in system Sb2Se3- Sb2Te3. At the same time, the position of the boiling curves of antimony chalcogenide solutions indicates the complete transfer of compounds into the vapor phase under the conditions of matte distillation processing (at 1100-1250 °C) at atmospheric pressure which is important for assessment of the distribution of antimony and rare metals - selenium and tellurium by processed products.
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Papikyan A. K, Harutyunyan S. R., Aghamalyan N. R., Hovsepyan R. K., Khachaturova A., Petrosyan S. I., Badalyan G. R., and Kafadaryan Y. A. "Thermoelectric and memristive features of the Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-S-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=- and Ag/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Ag structures." Semiconductors 56, no. 3 (2022): 264. http://dx.doi.org/10.21883/sc.2022.03.53071.9770.

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Single-layer Sb2Te3 films and three-layer Sb2Te3/Sb2S3/Sb2Te3 structures are obtained by thermal vacuum deposition. Their thermoelectric characteristics have been investigated in a wide temperature range (5-350 K). It is shown that the conductivity of Sb2Te3/Sb2S3/Sb2Te3 has a semiconductor behavior, the resistivity is an order of magnitude higher than the resistivity of the Sb2Te3 film; the Seebeck coefficient of Sb2Te3/Sb2S3/Sb2Te3 is 1.5 and 3 times higher than the Seebeck coefficient of the film and single-crystal Sb2Te3, respectively. The current--voltage characteristics of the Sb2Te3 film exhibit memristive properties with unipolar resistive switching, whereas Sb2Te3/Sb2S3/Sb2Te3 can be considered as a memristor with a parallel connected capacitance. Keywords: Sb2S3, Sb2Te3, films, volt-ampere characteristic, Seebeck coefficient, memristor.
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Папикян, А., С. Арутюнян, Н. Агамалян, Р. Овсепян, А. Хачатурова, С. Петросян, Г. Бадалян, and Е. Кафадарян. "Термоэлектрические и мемристивные особенности структур Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-S-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=- и Ag/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Ag." Физика и техника полупроводников 56, no. 3 (2022): 370. http://dx.doi.org/10.21883/ftp.2022.03.52126.9770.

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Abstract Single-layer Sb2Te3 films and three-layer Sb2Te3/Sb2S3/Sb2Te3 structures are obtained by thermal vacuum deposition. Their thermoelectric characteristics have been investigated in a wide temperature range (5350 K). It is shown that the conductivity of Sb2Te3/Sb2S3/Sb2Te3 has a semiconductor behavior, the resistivity is an order of magnitude higher than the resistivity of the Sb2Te3 film; the Seebeck coefficient of Sb2Te3/Sb2S3/Sb2Te3 is 1.5 and 3 times higher than the Seebeck coefficient of the film and single-crystal Sb2Te3, respectively. The currentvoltage characteristics of the Sb2Te3 film exhibit memristive properties with unipolar resistive switching, whereas Sb2Te3/Sb2S3/Sb2Te3 can be considered as a memristor with a parallel connected capacitance.
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Dally, B. M., N. Kouame, and D. Houphouët-Boigny. "Study of some numerical characteristic parameters of Sb2S3-As2S3-Sb2Te3 vitreous compositions calculated from their chemical formula obtained by EDS experiments." Chalcogenide Letters 18, no. 11 (November 2021): 681–91. http://dx.doi.org/10.15251/cl.2021.1811.681.

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Glasses of binary systems (Sb2S3-As2S3 and Sb2Te3-As2S3) and ternary sections (containing 10, 20 and 40 mol% of Sb2Te3) belonging to Sb2S3-As2S3-Sb2Te3 system were prepared by rapid quenching method in ice water of their liquid phases. From chemical formulas obtained by using Energy Dispersion Spectroscopy (EDS), average values of Sb2S3-As2S3-Sb2Te3 glasses’ parameters such as coordination number (Z), atomic radius (Rav), atomic number (Zav), atomic molar mass (Mav) and electronegativity (av) were calculated. These parameters were used to explain the formation of the glasses in the Sb2S3-As2S3-Sb2Te3 system by following their evolution as a function of the As2S3 content.
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Zybała, R., K. Mars, A. Mikuła, J. Bogusławski, G. Soboń, J. Sotor, M. Schmidt, et al. "Synthesis and Characterization of Antimony Telluride for Thermoelectric and Optoelectronic Applications." Archives of Metallurgy and Materials 62, no. 2 (June 1, 2017): 1067–70. http://dx.doi.org/10.1515/amm-2017-0155.

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AbstractAntimony telluride (Sb2Te3) is an intermetallic compound crystallizing in a hexagonal lattice withR-3mspace group. It creates a c lose packed structure of anABCABCtype. As intrinsic semiconductor characterized by excellent electrical properties, Sb2Te3is widely used as a low-temperature thermoelectric material. At the same time, due to unusual properties (strictly connected with the structure), antimony telluride exhibits nonlinear optical properties, including saturable absorption. Nanostructurization, elemental doping and possibilities of synthesis Sb2Te3in various forms (polycrystalline, single crystal or thin film) are the most promising methods for improving thermoelectric properties of Sb2Te3. Applications of Sb2Te3in optical devices (e.g. nonlinear modulator, in particular saturable absorbers for ultrafast lasers) are also interesting. The antimony telluride in form of bulk polycrystals and layers for thermoelectric and optoelectronic applications respectively were used. For optical applications thin layers of the material were formed and studied. Synthesis and structural characterization of Sb2Te3were also presented here. The anisotropy (packed structure) and its influence on thermoelectric properties have been performed. Furthermore, preparation and characterization of Sb2Te3thin films for optical uses have been also made.
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da Silva, Estelina Lora, Mario C. Santos, Plácida Rodríguez-Hernández, Alfonso Muñoz, and Francisco Javier Manjón. "Theoretical Study of Pressure-Induced Phase Transitions in Sb2S3, Bi2S3, and Sb2Se3." Crystals 13, no. 3 (March 14, 2023): 498. http://dx.doi.org/10.3390/cryst13030498.

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We report an ab initio study of Sb2S3, Sb2Se3, and Bi2S3 sesquichalcogenides at hydrostatic pressures of up to 60 GPa. We explore the possibility that the C2/m, C2/c, the disordered Im-3m, and the I4/mmm phases observed in sesquichalcogenides with heavier cations, viz. Bi2Se3, Bi2Te3, and Sb2Te3, could also be formed in Sb2S3, Sb2Se3, and Bi2S3, as suggested from recent experiments. Our calculations show that the C2/c phase is not energetically favorable in any of the three compounds, up to 60 GPa. The C2/m system is also unfavorable for Sb2S3 and Bi2S3; however, it is energetically favorable with respect to the Pnma phase of Sb2Se3 above 10 GPa. Finally, the I4/mmm and the disordered body-centered cubic-type Im-3m structures are competitive in energy and are energetically more stable than the C2/m phase at pressures beyond 30 GPa. The dynamical stabilities of the Pnma, Im-3m, C2/m, and I4/mmm structural phases at high pressures are discussed for the three compounds.
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Deli, M. Leh, J. C. Jumas, E. Dichi, and D. Houphouet Boigny. "121Sb Mössbauer spectroscopy of 10mol% Sb2Te3 section of pseudo-ternary Sb2Se3–As2Se3–Sb2Te3 glasses." Journal of Non-Crystalline Solids 351, no. 27-29 (August 2005): 2329–32. http://dx.doi.org/10.1016/j.jnoncrysol.2005.06.011.

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Jeon, Hyung-Wook, Heon-Phil Ha, Dow-Bin Hyun, and Jae-Dong Shim. "Electrical and thermoelectrical properties of undoped Bi2Te3-Sb2Te3 and Bi2Te3-Sb2Te3-Sb2Se3 single crystals." Journal of Physics and Chemistry of Solids 52, no. 4 (January 1991): 579–85. http://dx.doi.org/10.1016/0022-3697(91)90151-o.

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Iaseniuc, O., M. Iovu, S. Rosoiu, M. Bardeanu, L. B. Enache, G. Mihai, O. Bordianu, et al. "Structural analysis of As-S-Sb-Te polycrystalline nanostructured semiconductors." Chalcogenide Letters 19, no. 11 (November 30, 2022): 841–46. http://dx.doi.org/10.15251/cl.2022.1911.841.

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The aim of this paper is to characterize the polycrystalline and vitreous phases in the As2S3-Sb2S3-Sb2Te3 systems using several techniques such as XRD, SEM, EDS, and micro-Raman spectroscopy. The As1.17S2.7Sb0.83Te0.40, As1.04S2.4Sb0.96Te0.60, As0.63S2.7Sb1.37Te0.30, and As0.56S2.4Sb1.44Te0.60 semiconductor chalcogenide bulk glasses were examined using Scanning Electron microscopy (SEM), Energy-Dispersive Spectroscopy (EDS), X-Ray diffraction (XRD) and micro-Raman analysis. The EDS quantitative and mapping analysis showed that for each investigated area, the identified elements were sulfur (S), arsenic (As), antimony (Sb) and tellurium (Te). These elements are present in constant atomic percentages on the entire sample, showing a good homogeneity of the samples. The study of samples by the above-mentioned methods showed the presence of crystalline phases and amorphous phases with the polycrystalline inclusions corresponding to the structural units AsS3, Sb2S3, and Sb2Те3.
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Dissertations / Theses on the topic "Sb2Te3"

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Leimkühler, Gisbert. "Elektrochemische Herstellung und strukturelle Untersuchung von Sb2Te3 und SbxTey." [S.l. : s.n.], 2003. http://deposit.ddb.de/cgi-bin/dokserv?idn=969279493.

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Yu, Bo. "Fabrication and Evaluation of Sb2Te3/PVDF Hybrid Thermoelectric Films." Thesis, KTH, Tillämpad fysik, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-288684.

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Thermoelectric (TE) materials and devices have been extensively studied for harvesting waste heat energy. There is more interest to fabricate TE materials and devices at low cost and highly-efficient ways. Besides, TE materials and devices should be flexible and light-weight to address the requirements of emerging applications such as wearable TE power generators, health sensors, and powering small mobile wireless devices. To fabricate flexible and light-weight TE films with low cost and high-efficiency, organic- inorganic hybrid materials have been introduced. Organic-inorganic hybrid materials not only show the advantages of organic materials, such as good flexibility, light-weight, low cost, but also reflects the good TE properties of inorganic TE materials. The aim of this project was to synthesize and investigate the p-type hybrid TE films.Recently, many different methods and mechanisms have been tested to improve TE performance of materials. One of these mechanisms called defect engineering, which has been used to enhance TE performance by increasing the carrier concentration. Another approach can be the introduction of interfaces and grain boundaries which can improve TE performance by suppressing lattice thermal conductivity. In addition, nanomaterials and low-dimensional materials are also used for improving TE performance, classical size effect suppresses lattice thermal conductivity by limiting the mean free path, while quantum size effect increases the Seebeck coefficient by creating a clear electronic density of state function.In this project, flexible and free-standing TE films based on Sb2Te3 nanoplatelets/PVDF composites have been fabricated via doctor blading method. The SEM images of these films show that they are porous structures. The sizes of Sb2Te3 nanoplates are around 1 μm with hexagonal morphology. Porous and nano-sized structures are helpful for enhancing ZT of TE films. However, porous structures not only reduce thermal conductivity but also deteriorate electrical conductivity. The resistance results of the films with different ratio of Sb2Te3/PVDF showed that the existence of porous structures in the films deteriorates the $ of films, which is seen in samples with low PVDF content. Initial findings are promising and can pave the way to design TE-paste to generate active surfaces with easily applicable hybrid materials.
Termoelektriska (TE) material och anordningar har studerats för att skörda spillvärmeenergi. Det är mer intresse att tillverka TE-material och enheter till låga kostnader och på ett högeffektivt sätt. TE-material och enheter bör dessutom vara flexibla och lätta att bämöta krav på nya applikationer som bärbara TE-kraftgeneratorer, hälsosensorer och driva små mobila trådlösa enheter. För att tillverka flexibla och lätta TE-filmer med ett billigt och högeffektivt sätt har organiska-oorganiska hybridmaterial införts. Organiska-oorganiska hybridmaterial visar inte bara fördelarna med organiska material, såsom god flexibilitet, lätt vikt, låg kostnad, utan återspeglar också de goda TE egenskaperna hos oorganiska TE material. Syftet med detta projekt var att syntetisera och undersöka p-typ hybrid-TE-filmer.Nyligen uppståd många metoder och mekanismer för att förbättra TE prestanda. Den första är defektteknik, vilket ökar bärarkoncentrationen för att förbättra TE prestanda. Dessutom kan införandet av gränssnitt och korngräns förbättra TE prestanda genom att undertrycka gitterens värmeledningsförmåga. Dessutom används nanomaterial och material med låg dimension också för att förbättra TE prestanda, klassisk storlekseffekt undertrycker gitterens värmeledningsförmåga genom att begränsa den genomsnittliga fria vägen, medan kvantstorlekseffekt ökar Seebeck-koefficienten genom att skapa en tydlig elektronisk tillståndstäthet (DOS) fungera.I detta projekt, mycket flexibla och fristående termoelektriska filmtyger baserade på Sb2Te3-nanoplater / PVDF-kompositer med doktorblåsningsmetod. SEM-bilderna av dessa filmer visar att de är porösa strukturer. Och det framgår tydligt att morfologin hos Sb2Te3-nanoplater är cirka 1 μm hexagonala strukturer. Teoretiskt är porösa strukturer och nanostrukturer användbara för att förbättra ZT av TE-filmer. Porösa strukturer minskar emellertid inte bara värmeledningsförmågan utan försämrar även den elektriska konduktiviteten. Resistensresultaten för filmerna med olika Sb2Te3/PVDF förhållanden visade att förekomsten av porösa strukturer i filmerna försämrar filmens elektriska konduktivitet, vilket ses i prover med lågt PVDF-innehåll. Preliminära resultat är lovande och kan bana väg för att designa en tjock TE-lösning för att generera aktiva ytor med lätt tillämpliga hybridmaterial.
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Wang, Rui Ning. "Epitaxial growth and characterization of GeTe and GeTe/Sb2Te3 superlattices." Doctoral thesis, Humboldt-Universität zu Berlin, 2017. http://dx.doi.org/10.18452/18135.

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Die epitaktische Wachstum von GeTe Dünnschichten und Sb2Te3/GeTe Übergittern durch Molekularstrahlepitaxie wird auf drei verschiedenen Silizium Oberflächen gezeigt: Si(111)−(7×7), Si(111)−(√3×√3)R30°−Sb, und Si(111)−(1×1)−H. Mit Röntgenstrukturanalyse wird bewiesen, dass die epitaktische Beziehung der GeTe Schicht von der Oberflächepassievierung abhängig ist; auf einer passivierten Fläche können verdrehte Domänen unterdrückt sein. Dieses Verhalten ähnelt dem, welches bei 2D Materialien zu erwarten wäre, und wird auf die Schwäche der Resonanten ungebundenen Zustände zurückgeführt, die durch Peierls Verzerrung noch schwächer werden.
The growth by molecular beam epitaxy of GeTe and Sb2Te3/GeTe superlattices on three differently reconstructed Si(111) surfaces is demonstrated. Namely, these are the Si(111)−(7×7), Si(111)−(√3×√3)R30°−Sb, and Si(111)−(1×1)−H reconstructions. Through X-ray diffraction, the epitaxial relationship of GeTe is shown to depend on the passivation of the surface; in-plane twisted and twinned domains could be suppressed on a passivated surface. This behavior which resembles what would be expected from lamellar materials, is attributed to the relative weakness of resonant dangling bonds, that are further weakened by Peierls distortion.
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Wolf, Michael Scott. "Infrared and Optical Studies of Topological Insulators BI2TE3 BI2SE3 and SB2TE3." University of Akron / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=akron1310675743.

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Bragaglia, Valeria. "Epitaxial Growth and Ultrafast Dynamics of GeSbTe Alloys and GeTe/Sb2Te3 Superlattices." Doctoral thesis, Humboldt-Universität zu Berlin, 2017. http://dx.doi.org/10.18452/18406.

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In dieser Arbeit wird das Wachstum von dünnen quasi-kristallinen Ge-Sb-Te (GST) Schichten mittels Molekularstrahlepitaxie demonstriert, die zu einer geordneten Konfiguration von intrinsischen Kristallgitterfehlstellen führen. Es wird gezeigt, wie es eine Strukturanalyse basierend auf Röntgenstrahlbeugungssimulationen, Dichtefunktionaltheorie und Transmissionselektronenmikroskopie ermöglicht, eine eindeutige Beurteilung der Kristallgitterlückenanordnung in den GST-Proben vorzunehmen. Das Verständnis für die Ordnungsprozesse der Gitterfehlstellen erlaubt eine gezielte Einstellung des Ordnungsgrades selbst, der mit der Zusammensetzung und der Kristallphase des Materials in Zusammenhang steht. Auf dieser Basis wurde ein Phasendiagramm mit verschiedenen Wachstumsfenstern für GST erstellt. Des Weiteren wird gezeigt, dass man eine hohe Ordnung der Gitterfehlstellen in GST auch durch Ausheizprozesse und anhand von Femtosekunden-gepulster Laserkristallisation von amorphem Material erhält, das zuvor auf einem als Kristallisationsgrundlage dienenden Substrat abgeschiedenen wurde. Diese Erkenntnis ist bemerkenswert, da sie zeigt, dass sich kristalline GST Schichten mit geordneten Kristallgitterlücken durch verschiedene Herstellungsprozesse realisieren lassen. Darüber hinaus wurde das Wachstum von GeTe/Sb2Te3 Übergittern durchgeführt, deren Struktur die von GST mit geordneten Gitterfehlstellen widerspiegelt. Die Möglichkeit den Grad der Gitterfehlstellenordung in GST gezielt zu manipulieren wurde mit einer Studie der Transporteigenschaften kombiniert. Die Anwendung von großflächigen Charakterisierungsmethoden wie XRD, Raman und IR-Spektroskopie, erlaubte die Bestimmung der Phase und des Fehlstellenordnungsgrades von GST und zeigte eindeutig, dass die Fehlstellenordnung für den Metall-Isolator-Übergang (MIT) verantwortlich ist. Insbesondere wird durch das Vergleichen von XRD-Messungen mit elektrischen Messungen gezeigt, dass der Übergang von isolierend zu leitend erfolgt, sobald eine Ordnung der Kristallgitterlücken einsetzt. Dieses Phänomen tritt in der kubischen Kristallphase auf, wenn Gitterfehlstellen in GST von einem ungeordneten in einen geordneten Zustand übergehen. Im zweiten Teil des Kapitels wird eine Kombination aus FIR- und Raman-Spektroskopie zur Untersuchung der Vibrationsmoden und des Ladungsträgerverhaltens in der amorphen und der kristallinen Phase angewendet, um Aktivierungsenergien für die Elektronenleitung, sowohl für die kubische, als auch für die trigonale Kristallphase von GST zu bestimmen. Hier ist es wichtig zu erwähnen, dass, in Übereinstimmung mit Ergebnissen aus anderen Untersuchungen, das Auftauchen eines MIT beim Übergang zwischen der ungeordneten und der geordneten kubischen Phase beobachtet wurde. Schlussendlich wurden verschiedene sogenannte Pump/Probe Technik, bei der man das Material mit dem Laser anregt und die Röntgenstrahlung oder Terahertz (THz)-spektroskopie als Sonde nutzt, angewandt. Dies dient um ultra-schnelle Dynamiken zu erfassen, die zum Verständnis der Umschaltmechanismen nötig sind. Die Empfindlichkeit der THz-Messungen hinsichtlich der Leitfähigkeit, sowohl in GST, als auch in GeTe/Sb2Te3 Übergittern zeigte, dass die nicht-thermische Natur der Übergitterumschaltprozesse mit Grenzflächeneffekten zusammenhängt und . Der Ablauf wird mit beeindruckender geringer Laser-Fluenz erreicht. Dieses Ergebnis stimmt mit Berichten aus der Literatur überein, in denen ein Kristall-zu Kristallwechsel von auf Übergittern basierenden Speicherzellen für effizienter gehalten wird als GST Schmelzen, was zu einen ultra-schwachen Energieverbrauch führt.
The growth by molecular beam epitaxy of Ge-Sb-Te (GST) alloys resulting in quasi-single-crystalline films with ordered configuration of intrinsic vacancies is demonstrated. It is shown how a structural characterization based on transmission electron microscopy, X-ray diffraction and density functional theory, allowed to unequivocally assess the vacancy ordering in GST samples, which was so far only predicted. The understanding of the ordering process enabled the realization of a fine tuning of the ordering degree itself, which is linked to composition and crystalline phase. A phase diagram with the different growth windows for GST is obtained. High degree of vacancy ordering in GST is also obtained through annealing and via femtosecond-pulsed laser crystallization of amorphous material deposited on a crystalline substrate, which acts as a template for the crystallization. This finding is remarkable as it demonstrates that it is possible to create a crystalline GST with ordered vacancies by using different fabrication procedures. Growth and structural characterization of GeTe/Sb2Te3 superlattices is also obtained. Their structure resembles that of ordered GST, with exception of the Sb and Ge layers stacking sequence. The possibility to tune the degree of vacancy ordering in GST has been combined with a study of its transport properties. Employing global characterization methods such as XRD, Raman and Far-Infrared spectroscopy, the phase and ordering degree of the GST was assessed, and unequivocally demonstrated that vacancy ordering in GST drives the metal-insulator transition (MIT). In particular, first it is shown that by comparing electrical measurements to XRD, the transition from insulating to metallic behavior is obtained as soon as vacancies start to order. This phenomenon occurs within the cubic phase, when GST evolves from disordered to ordered. In the second part of the chapter, a combination of Far-Infrared and Raman spectroscopy is employed to investigate vibrational modes and the carrier behavior in amorphous and crystalline phases, enabling to extract activation energies for the electron conduction for both cubic and trigonal GST phases. Most important, a MIT is clearly identified to occur at the onset of the transition between the disordered and the ordered cubic phase, consistently with the electrical study. Finally, pump/probe schemes based on optical-pump/X-ray absorption and Terahertz (THz) spectroscopy-probes have been employed to access ultrafast dynamics necessary for the understanding of switching mechanisms. The sensitivity of THz-probe to conductivity in both GST and GeTe/Sb2Te3 superlattices showed that the non-thermal nature of switching in superlattices is related to interface effects, and can be triggered by employing up to one order less laser fluences if compared to GST. Such result agrees with literature, in which a crystal to crystal switching of superlattice based memory cells is expected to be more efficient than GST melting, therefore enabling ultra-low energy consumption.
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Adhikari, Pan P. "Optical Study of Inter-band Transitions in Topological Insulators Bi2Se3, Bi2Te3, and Sb2Te3." University of Akron / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=akron1497994862971012.

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LONGO, EMANUELE MARIA. "HETEROSTRUCTURES BASED ON THE LARGE-AREA Sb2Te3 TOPOLOGICAL INSULATOR FOR SPIN-CHARGE CONVERSION." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2021. http://hdl.handle.net/10281/311358.

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I dispositivi elettronici che sfruttano proprietà legate allo spin elettronico costituiscono un settore molto promettente per lo sviluppo della nanoelettronica del futuro. Recentemente, gli isolanti topologici tridimensionali (IT-3D), quando posti a contatto con materiali ferromagnetici (FM), giocano un ruolo centrale nel contesto del miglioramento dell’efficienza di conversione tra spin e carica elettronici in eterostrutture di tipo FM/TI. L’oggetto principale di questa tesi è lo studio delle interazioni chimico-fisiche tra l’IT-3D Sb2Te3, nelle sue forme granulare ed epitassiale, con film di Fe e Co attraverso l’uso di tecniche di Diffrazione/Riflettività di raggi-X, spettroscopia di risonanza ferromagnetica (FMR) e pompaggio di spin in risonanza ferromagnetica (SP-FMR). In concomitanza con l’ottimizzazione delle proprietà dei materiali, un particolare interesse è stato rivolto verso l’impatto industriale della ricerca presentata. Per questo motivo, per la produzione di Sb2Te3 e di alcuni dei FM impiegati, sono state impiegate tecniche di deposizione di materiali su larga scala ( 4 pollici), quali la Metal Organic Chemical Vapor Deposition (MOCVD) e l’Atomic Layer Deposition (ALD) rispettivamente. Una approfondita caratterizzazione chimica, strutturale e magnetica dell’interfaccia Fe/ Sb2Te3-granulare ha evidenziato un marcato intermixing tra i materiali e una generale tendenza degli atomi di Fe nel legare con l’elemento calcogenuro quando presente in un IT. Attraverso trattamenti termici rapidi e a bassa temperatura sottoposti sui film di Sb2Te3 granulare prima della crescita del Fe, l’interfaccia Fe/Sb2Te3-granulare è risultata morfologicamente più netta e chimicamente stabile. Lo studio di film sottili di Co cresciuti attraverso ALD su Sb2Te3 granulare ha permesso la produzione di interfacce Co/Sb2Te3-granulare di alta qualità, con la possibilità inoltre di modificare le proprietà magneto-strutturali dei film di Co attraverso una selezione appropriata di substrati. Con l’obbiettivo di migliorare le proprietà dei film di Sb2Te3, dei trattamenti termici specifici sono stati condotti su Sb2Te3 granulare appena cresciuto, ottenendo film di Sb2Te3 altamente orientati con una qualità cristallina vicina al cristallo singolo di tipo epitassiale. Questi substrati di Sb2Te3 sono stati utilizzati per produrre eterostrutture di Au/Co/Sb2Te3-epitassiale e Au/Co/Au/Sb2Te3-epitassiale per studiare la loro risposta di FMR. I dati di FMR per il campione Au/Co/Sb2Te3-epitassiale sono stati interpretati considerando un contributo di Two Magnon Scattering (TMS) dominante, verosimilmente a causa della presenza di rugosità magnetica all’interfaccia Co/Sb2Te3-epitassiale. L’introduzione di un interlayer di Au per evitare il contatto diretto tra Co e Sb2Te3 si è dimostrato vantaggioso per la totale eliminazione del contributo di TMS. Misure di SP-FMR sono state condotte sulla struttura ottimizzata Au/Co/Au/Sb2Te3-epitassiale, sottolineando il ruolo giocato dallo strato di Sb2Te3-epitassiale nel processo di SP. I segnali di SP ricavati da campioni di Au/Co/Au/Si(111) e Co/Au/Si(111) sono stati utilizzati per determinare l’efficienza di conversione spin-carica ottenuta dall’introduzione dello strato di Sb2Te3. L’efficienza estratta è stata calcolata interpretando i dati di SP-FMR attraverso i modelli di effetto Edelstein inverso ed effetto di Spin-Hall inverso, i quali hanno dimostrato che l’IT-3D Sb2Te3 è un candidato promettente per essere impiegato nella prossima generazione di dispositivi spintronici.
Spin-based electronic devices constitute an intriguing area in the development of the future nanoelectronics. Recently, 3D topological insulators (TI), when in contact with ferromagnets (FM), play a central role in the context of enhancing the spin-to-charge conversion efficiency in FM/TI heterostructures. The main subject of this thesis is the study of the chemical-physical interactions between the granular and epitaxial Sb2Te3 3D-TI with Fe and Co thin films by means of X-ray Diffraction/Reflectivity, Ferromagnetic Resonance spectroscopy (FMR) and Spin Pumping-FMR. Beside the optimization of the materials properties, particular care was taken on the industrial impact of the presented results, thus large-scale deposition processes such as Metal Organic Chemical Vapor Deposition (MOCVD) and Atomic Layer Deposition (ALD) were adopted for the growth of the Sb2Te3 3D-TI and part of the FM thin films respectively. A thorough chemical, structural and magnetic characterization of the Fe/granular Sb2Te3 interface evidenced a marked intermixing between the materials and a general bonding mechanism between Fe atoms and the chalcogen element in chalcogenide-based TIs. Through rapid and mild thermal treatments performed on the granular Sb2Te3 substrate prior to Fe deposition, the Fe/granular-Sb2Te3 interface turned out to be sharper and chemically stable. The study of ALD-grown Co thin films deposited on top of the granular-Sb2Te3 allowed the production of high-quality Co/granular-Sb2Te3interfaces, with also the possibility to tune the magneto-structural properties of the Co layer through a proper substrate selection. In order to improve the structural properties of the Sb2Te3, specific thermal treatments were performed on the as deposited granular Sb2Te3, achieving highly oriented films with a nearly epitaxial fashion. The latter substrates were used to produce Au/Co/epitaxial-Sb2Te3 and Au/Co/Au/epitaxial-Sb2Te3 and the dynamic of the magnetization in these structures was investigated studying their FMR response. The FMR data for the Au/Co/Sb2Te3 samples were interpreted considering the presence of a dominant contribution attributed to the Two Magnon Scattering (TMS), likely due to the presence of an unwanted magnetic roughness at the Co/epitaxial-Sb2Te3 interface. The introduction of a Au interlayer to avoid the direct contact between Co and Sb2Te3 layers was shown to be beneficial for the total suppression of the TMS effect. SP-FMR measurements were conducted on the optimized Au/Co/Au/epitaxial-Sb2Te3 structure, highlighting the role played by the epitaxial Sb2Te3substrate in the SP process. The SP signals for the Au/Co/Au/Si(111) and Co/Au/Si(111) reference samples were measured and used to determine the effective spin-to-charge conversion efficiency achieved with the introduction of the epitaxial Sb2Te3 layer. The extracted SCC efficiency was calculated interpreting the SP-FMR data using the Inverse Edelstein effect and Inverse Spin-Hall effect models, which demonstrated that the Sb2Te3 3D-TI is a promising candidate to be employed in the next generation of spintronic devices.
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Kowalczyk, Philippe. "Super-réseaux GeTe/Sb2Te3 pour les mémoires iPCM : croissance PVD par épitaxie van der Waals et étude de leur structure." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT109/document.

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Afin de faire face à la demande croissante de mémoires de plus en plus performantes dans les systèmes informatiques, de nouvelles technologies se sont développées. Parmi elles, les mémoires résistives à changement de phase (ou PCM pour Phase-Change Memory) ont des propriétés et une maturité suffisante pour développer les nouvelles mémoires SCM (pour Storage Class Memory) comme en témoigne la récente commercialisation des produits Optane par la firme INTEL®. Néanmoins, la consommation énergétique des PCM lors de leur programmation reste élevée, ce qui limite leurs performances. L’intégration de super-réseaux (GeTe)2/(Sb2Te3)m dans des mémoires dites iPCM (pour interfacial Phase-Change Memory) est une des voies les plus prometteuse pour permettre une diminution significative des courants de programmation. Cependant, le mécanisme de transition des iPCM et la structure du matériau dans ses deux états de résistances sont encore méconnus. Dans ce contexte, l’objectif de cette thèse est d’élaborer des super-réseaux (GeTe)2/(Sb2Te3)m (m=1,2,4 et 8) cristallins, de déterminer leur structure puis de les intégrer dans des dispositifs mémoires. La pulvérisation cathodique alternée des matériaux GeTe et Sb2Te3 dans un équipement industriel de dépôt est utilisée pour effectuer l’épitaxie van der Waals de ces super-réseaux. Une optimisation du procédé par l’ajout d’une cible de Te en co-pulvérisation avec la cible de Sb2Te3 montre l’obtention de super-réseaux stœchiométriques présentant la périodicité souhaitée, ainsi qu’une orientation des plans cristallins (0 0 l) parallèle à la surface du substrat. Une description de l’ordre atomique local des super-réseaux ainsi optimisés est ensuite menée par l’étude d’images HAADF-STEM couplée à des simulations. Celle-ci révèle un phénomène d’inter-diffusion entre les couches de GeTe et de Sb2Te3 déposées aboutissant à la formation locale de GexSbyTez rhomboédriques, des mesures quantitatives de l’occupation des plans atomiques en Ge/Sb confirment aussi le phénomène. De plus, un modèle de structure à longue distance de ces super-réseaux considérant un empilement aléatoire de blocs cristallins permet la simulation des courbes de diffraction obtenues expérimentalement. Enfin, les premières intégrations des super-réseaux (GeTe)2/(Sb2Te3)m dans des dispositifs mémoires mettent en évidence une réduction importante des courants de programmation jusqu’à 4 fois inférieurs à une PCM et avec une endurance dépassant les 10 millions cycles
In order to satisfy the demand for more and more efficient memory in computer systems, new technologies have been developed. Among the latter resistive phase-change memories (PCM) exhibit capacities and sufficient maturity to achieve the so-called new SCM (for Storage Class Memory) devices as evidenced by the recent commercialization of Optane products by INTEL®. Nevertheless, PCM still require strong electrical consumption limiting their performance. Integration of (GeTe)2/(Sb2Te3)m superlattices in so-called iPCM (for interfacial Phase Change Memory) was shown to permit a significant decrease in programming currents. However, the switching mechanism of this memory and the structure of the material in its two resistance states are still under debate. The aim of this thesis is therefore to deposit crystalline (GeTe)2/(Sb2Te3)m (m=1,2,4 et 8) superlattices, to determine their structure and to integrate them into memory devices. GeTe and Sb2Te3 materials are alternately deposited by means of sputtering in an industrial deposition tool to perform van der Waals epitaxy of these superlattices. Stoichiometric superlattices with the desired periodicity and with an orientation of the (0 0 l) crystalline planes parallel to the surface of the substrate are obtained by innovative co-sputtering of Sb2Te3 and Te targets during Sb2Te3 deposition. A description of the local atomic order of superlattices is then carried out by studying HAADF-STEM images coupled to simulations. Intermixing between GeTe and Sb2Te3 deposited layers is thus revealed, leading to the local formation of rhombohedral GexSbyTez. Quantitative measurements of the Ge/Sb atomic plans occupation in further confirm the phenomenon. A long-range order structural model of superlattices by means of random stacking of crystalline blocks allows the simulation of experimental diffraction curves. Finally, the first integrations of (GeTe)2/(Sb2Te3)m (with m=1,2,4 et 8) superlattices in devices demonstrate a programming current up to 4 times lower than a PCM reference with an endurance exceeding 10 millions cycles
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Shayduk, Roman. "Molecular beam epitaxy of GeTe-Sb2Te3 phase change materials studied by X-ray diffraction." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2010. http://dx.doi.org/10.18452/16243.

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Die monolithische Integration von Phasenwechselmaterialien mit Halbleiter-Hetero\-strukturen er\"offnet neue Perspektiven f\"ur zuk\"unftige Generationen von nichtfl\"uchtigen Speicherbauelementen. %Epitaktische Phasenwechselmaterialien erm�glichen detaillierte %Studien der strukturellen �nderungen w�hrend des Phasen�bergangs und %erlauben eine Bestimmung der Skalierungslimits zuk�nftiger %Datenspeicher. Diese Arbeit befasst sich mit dem epitaktischen Wachstum von Ge-Sb-Te Phasenwechselmaterialien. Dazu wurden Ge-Sb-Te(GST) Schichten mittels Molekularstrahlepitaxie (MBE) auf GaSb(001)-Substraten abgeschieden. Die kristallografische Orientierung und die Ver\"anderungen der Gitterkonstante w\"ahrend des Wachstums wurden mittels R\"ontgenbeugung unter streifendem Einfall (GIXRD) bestimmt. Das Nukleationsverhalten zu Beginn des Wachstums wurde mittels Hochenergie-Elektronenbeugung unter streifendem Einfall (RHEED) untersucht.
The integration of phase change materials into semiconductor heterostructures may lead to the development of a new generation of high density non-volatile phase change memories. Epitaxial phase change materials allow to study the detailed structural changes during the phase transition and to determine the scaling limits of the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te phase change alloys on GaSb(001). We deposit Ge-Sb-Te (GST) films on GaSb(001) substrates by means of molecular beam epitaxy (MBE). The film orientation and lattice constant evolution is determined in real time during growth using grazing incidence X-ray diffraction (GID). The nucleation stage of the growth is studied \emph{in situ} using reflection high energy electron diffraction (RHEED).
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Azzouz, Yassine. "Etude de la croissance et des propriétés thermoélectriques du Bi2Te3, Sb2Te3 et de l'alliage BixSb2." Montpellier 2, 1990. http://www.theses.fr/1990MON20213.

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Le choix des materiaux pour les applications thermoelectriques depend essentiellement de la valeur de leur coefficient de merite. Nous avons obtenu des valeurs optimales en utilisant les semiconducteurs v2v13: telluride de bismuth et le telluride d'antimoine deposes par la technique du jet moleculaire. Nous avons fait croitre des couches de bi2te3, sb2te3 et bixsb2-xte3 sur un substrat amorphe. Nous avons etudie la composition et les proprietes cristallographiques des couches en fonction du rapport des flux moleculaires et de la temperature de substrat. Nous avons montre egalement que les proprietes thermoelectriques: nombre de porteurs, mobilite et pouvoir thermoelectrique dependent de la temperature de substrat et de la concentration atomique. Des thermopiles de puissance et des capteurs de puissance hyperfrequence a effet seebeck ont ete realises a base de ces materiaux. Concernant leur parametre essentiel, le coefficient de seebeck du couple (bi2te3(n), sb2te3(p)) est huit fois plus grand que celui du couple usuel (cu, constantan)
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Books on the topic "Sb2Te3"

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Madubuonu, Anthony. Far infrared optical properties of V and Cr doped Sb2Te3. St. Catharines, Ont: Brock University, Dept. of Physics, 2009.

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Books, Bchimak. Small Business Log Book: Log over 5000 Transactions, All in One Book, Ledger Book, Sales Order Book, Purchase Book and Inventory Tracker, to Track All of Your Bookkeepeing Using One Single Book, Perfect for Home Based Business. SB23. Independently Published, 2021.

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Book chapters on the topic "Sb2Te3"

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Suski, W., and T. Palewski. "YbSb2-Sb2Te3." In Pnictides and Chalcogenides II, 1731–32. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/10713485_702.

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Hu, Zhiyu, and Zhenhua Wu. "Sb2Te3-Based Multilayer Films." In Nanostructured Thermoelectric Films, 87–112. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-6518-2_4.

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Jain, M., and A. Gupta. "55 Diamagnetic susceptibility of Sb2Te3." In Diamagnetic Susceptibility and Anisotropy of Inorganic and Organometallic Compounds, 104. Berlin, Heidelberg: Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-44694-1_56.

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Orujlu, E. N., A. E. Seidzade, A. N. Mammadov, D. B. Tagiev, and M. B. Babanly. "Determination of the Boundaries of Solid Solutions in the MnTe-Sb2Te3 and SnTe-Sb2Te3 Systems." In 11th International Conference on Theory and Application of Soft Computing, Computing with Words and Perceptions and Artificial Intelligence - ICSCCW-2021, 513–21. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-92127-9_69.

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Suriñach, S., M. D. Baro, and M. T. Clavaguera-Mora. "Nucleation and Crystallization Kinetics in GeSe2-Sb2Te3 Systems." In Science and Technology of the Undercooled Melt, 252–53. Dordrecht: Springer Netherlands, 1986. http://dx.doi.org/10.1007/978-94-009-4456-5_20.

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Hu, Zhiyu, and Zhenhua Wu. "Preparation of Sb2Te3/Bi2Te3 Thin Films by Magnetron Sputtering." In Nanostructured Thermoelectric Films, 113–84. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-6518-2_5.

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Hu, Zhiyu, and Zhenhua Wu. "Growth of Sb2Te3 Films by Molecular Beam Epitaxial Method." In Nanostructured Thermoelectric Films, 185–219. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-6518-2_6.

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Mamun, M. A., D. Gu, D. Nminibapiel, H. Baumeart, H. Robinson, V. Kochergin, and A. A. Elmustafa. "Nanomechanical Properties of Atomic Layer Deposition Sb2Te3 Thin Films." In Supplemental Proceedings, 731–37. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118357002.ch91.

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Troyan, Evgeniy, and Alexander Doronin. "Change of GeTe/Sb2Te3 Thin-Film Memory Elements Resistance RON Under External Pressure." In Comprehensible Science, 427–33. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-66093-2_41.

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Ahmad, Mujeeb, Deepak Varandani, and B. R. Mehta. "Role of MoS2 on the Electrical and Thermoelectric Properties of Bi2Te3 and Sb2Te3 Alloys." In Springer Proceedings in Physics, 105–9. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_17.

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Conference papers on the topic "Sb2Te3"

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Wang, Yaguo, Carl Liebig, Xianfan Xu, and Rama Venkatasubramanian. "Phonon Scattering in Bi2Te3/Sb2Te3 Superlattice." In ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/mnhmt2012-75299.

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Ultrafast time-resolved measurements were conducted to investigate scattering mechanism of coherent optical and acoustic phonons in Bi2Te3, Sb2Te3 and Bi2Te3/Sb2Te3 superlattice (SL) films. Strong phonon scatterings in the Bi2Te3/Sb2Te3 SLs are attributed to the interfaces of their hetero-structures. Moreover, decreases of acoustic phonon velocity are observed in SLs, coming from phonon folding and softening. Our results show that both the enhanced interface scattering and the reduced phonon velocity contribute to suppressing the heat transport in SLs.
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Wang, Yaguo, Xianfan Xu, and Rama Venkatasubramanian. "Phonon Scattering in Bi2Te3/Sb2Te3 Superlattice." In ASME/JSME 2011 8th Thermal Engineering Joint Conference. ASMEDC, 2011. http://dx.doi.org/10.1115/ajtec2011-44012.

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Thermoelectric materials are characterized with the figure of merit, ZT = S2σT/κ, where T is the temperature, S the Seebeck coefficient, σ the electrical conductivity and κ the thermal conductivity. Many researches have been focused on reducing lattice thermal conductivity through increasing phonon scattering at interfaces. Thin-film superlattices are one of the promising candidates for high ZT thermoelectric materials. Several theoretical models have been used to explain the large ZT in superlattice. One comes from the extra scattering channels at interfaces introduced by the hetero-structure. Another is a result of quantum confinement effect which reduces the phonon group velocity propagating perpendicularly through the superlattice layers through flattening the dispersion curve of acoustic phonons. In this work, ultrafast time-resolved measurements were conducted on Bi2Te3, Sb2Te3 and Bi2Te3/Sb2Te3 superlattice (SL) films to detect coherent acoustic phonons in these materials. Scattering of these phonons is revealed in the Bi2Te3/Sb2Te3 SLs, which comes from the interfaces of the hetero-structure in SL. Also, a decrease of acoustic phonon velocity resulted from folding and flattening of phonons branches is observed. Results show that both interface scattering and the reduced phonon velocity contribute to suppressing the heat transfer process.
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Li, Xiaojian, and Chaogang Lou. "Narrow bandgap Bi2Te3/Sb2Te3 thermophotovoltaic cells." In 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC). IEEE, 2019. http://dx.doi.org/10.1109/pvsc40753.2019.8980561.

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Martynova, Kateryna, and Elena Rogacheva. "Microhardness of Sb2Te3 - Bi2Te3 solid solutions." In 2015 International Young Scientists Forum on Applied Physics (YSF). IEEE, 2015. http://dx.doi.org/10.1109/ysf.2015.7333243.

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Zhou, J., and R. G. Yang. "Thermoelectric Transport in Sb2Te3/Bi2Te3 Quantum Dot Nanocomposites." In ASME 2011 International Mechanical Engineering Congress and Exposition. ASMEDC, 2011. http://dx.doi.org/10.1115/imece2011-64923.

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Abstract:
We investigate the thermoelectric transport properties of Sb2Te3/Bi2Te3 quantum dot nanocomposites with spherical Sb2Te3 quantum dots arrays embedded in Bi2Te3 matrix through a two-channel transport model. In this model, the transport of quantum-confined electrons through the hopping mechanism is studied by tight-binding model together with Kubo formula and Green’s function method. The formation of minibands due to the quantum confinement and the phonon-bottleneck effect on carrier-phonon scattering are considered. The transport of bulk-like electrons is studied by Boltzmann-transport-equation-based model. We consider the intrinsic carrier scatterings as well as the carrier-interface scattering of these bulk-like electrons. Thermoelectric transport properties are studied with different quantum dot sizes, inter-dot distances, doping concentrations, and temperatures. We find that electrical conductivity and Seebeck coefficient can be enhanced simultaneously in Sb2Te3/Bi2Te3 quantum dot nanocomposites because of the formation of minibands and the phonon-bottleneck effect on carrier-phonon scattering. Our results could shed some light on the design of high-efficiency thermoelectric materials.
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Yusupov, F., and D. Xidirov. "Bi2Te3 VA Sb2Te3 YARIMO’TKAZGICHLI MATERIALLARNING TERMOELEKTRIK HUSUSIYATLARI." In Современные тенденции развития физики полупроводников: достижения, проблемы и перспективы. Research Support Center LLC, 2020. http://dx.doi.org/10.47100/conference_physics/s1_15.

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Malik, K., Diptasikha Das, A. Dasgupta, S. Bandyopadhay, and Aritra Banerjee. "Thermoelectric property study of Bi2Te3-Sb2Te3 mixed crystals." In DAE SOLID STATE PHYSICS SYMPOSIUM 2015. Author(s), 2016. http://dx.doi.org/10.1063/1.4948053.

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Guo, Gang, Jie Feng, and Yin Zhang. "SiNx-doped Sb2Te3 films for phase change memory." In 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2010. http://dx.doi.org/10.1109/icsict.2010.5667578.

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Wang, Hao, Yaliang Gui, Chaobo Dong, Hamed Dalir, and Volker J. Sorger. "Self-Powered Photodetector Based on Mos2/Sb2Te3 Heterojunction." In 2022 IEEE Photonics Conference (IPC). IEEE, 2022. http://dx.doi.org/10.1109/ipc53466.2022.9975582.

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Park, Jaehun, Hyejin Choi, Seonghoon Jung, Tae Hyeon Kim, Jimin Chae, Hanbum Park, Kwangho Jeong, and Mann-Ho Cho. "Time resolved terahertz spectroscopy of topological insulator Sb2Te3." In 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE, 2017. http://dx.doi.org/10.1109/irmmw-thz.2017.8067147.

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