Journal articles: 'Sb2Te3'

1

Verma, Rakesh, Chae-Eun Moon, and Chan-Jin Park. "Antimony Telluride Nanocomposite As a High Performance Anode for Rechargeable Potassium-Ion Batteries." ECS Meeting Abstracts MA2022-02, no. 4 (October 9, 2022): 399. http://dx.doi.org/10.1149/ma2022-024399mtgabs.

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The development of high-capacity and low-cost energy storage systems are a top priority in electric vehicles and smart grids. Room temperature potassium-ion batteries (PIBs), which have the advantages of high theoretical capacity, abundant earth reserves, and low potassium costs, have recently emerged as an appealing alternative to traditional lithium-ion batteries (LIBs). In particular, finding advanced anode materials with suitable operation potential and high capacity is of significance for next-generation PIBs. In this regard, Sb-based materials have recently gained popularity as promising anode materials for batteries in terms of their suitable working potential, high density, and theoretical capacity. Among them, Sb2Te3 has a much higher density (6.66 g/cm3) than other Sb-based materials such as Sb2O3, Sb2S3, and Sb2Se3. This suggests that Sb2Te3 can have a high theoretical capacity. In addition, Te exhibits a higher conductivity than S or Se. Accordingly, the Sb2Te3 is appealing as an ideal anode for PIBs. Unfortunately, the Sb2Se3 has poor cycling stability and rate performances, which is primarily owing to the large volume change during alloying and dealloying. In this study, using a simple hydrothermal strategy, we synthesized a carbon-coated Sb2Te3 nanocomposite (Sb2Te3@C). In the novel design, the Sb2Te3@C nanocomposite is compactly encapsulated by a uniform carbon layer, which effectively relieves structural stress leading to preventing structural pulverization and stabilize the solid electrolyte interface layer. As expected with this optimal design, the Sb2Te3@C nanocomposite electrode performed nicely suitable for PIBs. In addition, the effect of the alloying/dealloying process on the crystal structure of Sb2Te3@C was investigated using in- situ/ex-situ XRD patterns recorded at various stages of discharge and charge to clarify the alloying mechanism. Furthermore, a full cell made up of a Sb2Te3@C anode and a potassium Prussian blue type cathode also exhibited successful operation.

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Volodin, V. N., S. A. Trebukhov, A. V. Nitsenko, N. M. Burabayeva, and X. A. Linnik. "Distribution of antimonium chalcogenides under conditions of vacuum thermal processing of mattes." Kompleksnoe Ispolʹzovanie Mineralʹnogo syrʹâ/Complex Use of Mineral Resources/Mineraldik Shikisattardy Keshendi Paidalanu 326, no. 3 (February 24, 2023): 88–95. http://dx.doi.org/10.31643/2023/6445.32.

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It was established based on the analysis of the results of published works and the results obtained by the authors that there is no information on the behavior and distribution of antimony chalcogenides - Sb2S3, Sb2Se3, Sb2Te3, as well as double systems - Sb2S3-Sb2Se3, Sb2S3-Sb2Te3 and Sb2Se3-Sb2Te3 under the vacuum processing conditions for polymetallic mattes performed at 1100-1250 °C and a vacuum of 15 - 0.7 kPa. It was found based on the saturated vapor pressure values for monochalcogenides that the vapor pressure of free antimony sulfide will be 58.95 kPa at 1100 °C, i.e. the lower limit of the technological interval, which indicates its complete transfer to the vapor phase when the mattes are evacuated; the vapor pressure of free antimony selenide at 1100 °C exceeds the atmospheric pressure value (101.3 kPa), and Sb2Se3 would be completely extracted into the vapor phase in vacuum; the boiling point of liquid antimony telluride at atmospheric pressure corresponds to 971 °C, and it would be extracted into the vapor phase under the conditions of matte evacuation. The thermodynamic evaporation characteristics of antimony chalcogenides were found. It was concluded based on the location of the boundaries of the liquid and vapor phase coexistence fields that it is impossible to separate binary systems of antimony chalcogenides into separate compounds in the process of one evaporation cycle – condensation, in binary systems. Different effects of pressure reduction over melts were found. Lowering the pressure from atmospheric one to 0.7 kPa in Sb2S3-Sb2Se3 system did not change the position of the boundaries of the liquid and vapor fields (L + V) under the temperature; field width (L+V) decreases with decreasing pressure in Sb2S3-Sb2Te3 system; the field width first decreases with temperature, then increases in system Sb2Se3- Sb2Te3. At the same time, the position of the boiling curves of antimony chalcogenide solutions indicates the complete transfer of compounds into the vapor phase under the conditions of matte distillation processing (at 1100-1250 °C) at atmospheric pressure which is important for assessment of the distribution of antimony and rare metals - selenium and tellurium by processed products.

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Papikyan A. K, Harutyunyan S. R., Aghamalyan N. R., Hovsepyan R. K., Khachaturova A., Petrosyan S. I., Badalyan G. R., and Kafadaryan Y. A. "Thermoelectric and memristive features of the Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-S-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=- and Ag/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Ag structures." Semiconductors 56, no. 3 (2022): 264. http://dx.doi.org/10.21883/sc.2022.03.53071.9770.

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Single-layer Sb2Te3 films and three-layer Sb2Te3/Sb2S3/Sb2Te3 structures are obtained by thermal vacuum deposition. Their thermoelectric characteristics have been investigated in a wide temperature range (5-350 K). It is shown that the conductivity of Sb2Te3/Sb2S3/Sb2Te3 has a semiconductor behavior, the resistivity is an order of magnitude higher than the resistivity of the Sb2Te3 film; the Seebeck coefficient of Sb2Te3/Sb2S3/Sb2Te3 is 1.5 and 3 times higher than the Seebeck coefficient of the film and single-crystal Sb2Te3, respectively. The current--voltage characteristics of the Sb2Te3 film exhibit memristive properties with unipolar resistive switching, whereas Sb2Te3/Sb2S3/Sb2Te3 can be considered as a memristor with a parallel connected capacitance. Keywords: Sb2S3, Sb2Te3, films, volt-ampere characteristic, Seebeck coefficient, memristor.

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Папикян, А., С. Арутюнян, Н. Агамалян, Р. Овсепян, А. Хачатурова, С. Петросян, Г. Бадалян, and Е. Кафадарян. "Термоэлектрические и мемристивные особенности структур Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-S-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=- и Ag/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Ag." Физика и техника полупроводников 56, no. 3 (2022): 370. http://dx.doi.org/10.21883/ftp.2022.03.52126.9770.

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Abstract Single-layer Sb2Te3 films and three-layer Sb2Te3/Sb2S3/Sb2Te3 structures are obtained by thermal vacuum deposition. Their thermoelectric characteristics have been investigated in a wide temperature range (5350 K). It is shown that the conductivity of Sb2Te3/Sb2S3/Sb2Te3 has a semiconductor behavior, the resistivity is an order of magnitude higher than the resistivity of the Sb2Te3 film; the Seebeck coefficient of Sb2Te3/Sb2S3/Sb2Te3 is 1.5 and 3 times higher than the Seebeck coefficient of the film and single-crystal Sb2Te3, respectively. The currentvoltage characteristics of the Sb2Te3 film exhibit memristive properties with unipolar resistive switching, whereas Sb2Te3/Sb2S3/Sb2Te3 can be considered as a memristor with a parallel connected capacitance.

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5

Dally, B. M., N. Kouame, and D. Houphouët-Boigny. "Study of some numerical characteristic parameters of Sb2S3-As2S3-Sb2Te3 vitreous compositions calculated from their chemical formula obtained by EDS experiments." Chalcogenide Letters 18, no. 11 (November 2021): 681–91. http://dx.doi.org/10.15251/cl.2021.1811.681.

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Glasses of binary systems (Sb2S3-As2S3 and Sb2Te3-As2S3) and ternary sections (containing 10, 20 and 40 mol% of Sb2Te3) belonging to Sb2S3-As2S3-Sb2Te3 system were prepared by rapid quenching method in ice water of their liquid phases. From chemical formulas obtained by using Energy Dispersion Spectroscopy (EDS), average values of Sb2S3-As2S3-Sb2Te3 glasses’ parameters such as coordination number (Z), atomic radius (Rav), atomic number (Zav), atomic molar mass (Mav) and electronegativity (av) were calculated. These parameters were used to explain the formation of the glasses in the Sb2S3-As2S3-Sb2Te3 system by following their evolution as a function of the As2S3 content.

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6

Zybała, R., K. Mars, A. Mikuła, J. Bogusławski, G. Soboń, J. Sotor, M. Schmidt, et al. "Synthesis and Characterization of Antimony Telluride for Thermoelectric and Optoelectronic Applications." Archives of Metallurgy and Materials 62, no. 2 (June 1, 2017): 1067–70. http://dx.doi.org/10.1515/amm-2017-0155.

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AbstractAntimony telluride (Sb2Te3) is an intermetallic compound crystallizing in a hexagonal lattice withR-3mspace group. It creates a c lose packed structure of anABCABCtype. As intrinsic semiconductor characterized by excellent electrical properties, Sb2Te3is widely used as a low-temperature thermoelectric material. At the same time, due to unusual properties (strictly connected with the structure), antimony telluride exhibits nonlinear optical properties, including saturable absorption. Nanostructurization, elemental doping and possibilities of synthesis Sb2Te3in various forms (polycrystalline, single crystal or thin film) are the most promising methods for improving thermoelectric properties of Sb2Te3. Applications of Sb2Te3in optical devices (e.g. nonlinear modulator, in particular saturable absorbers for ultrafast lasers) are also interesting. The antimony telluride in form of bulk polycrystals and layers for thermoelectric and optoelectronic applications respectively were used. For optical applications thin layers of the material were formed and studied. Synthesis and structural characterization of Sb2Te3were also presented here. The anisotropy (packed structure) and its influence on thermoelectric properties have been performed. Furthermore, preparation and characterization of Sb2Te3thin films for optical uses have been also made.

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da Silva, Estelina Lora, Mario C. Santos, Plácida Rodríguez-Hernández, Alfonso Muñoz, and Francisco Javier Manjón. "Theoretical Study of Pressure-Induced Phase Transitions in Sb2S3, Bi2S3, and Sb2Se3." Crystals 13, no. 3 (March 14, 2023): 498. http://dx.doi.org/10.3390/cryst13030498.

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We report an ab initio study of Sb2S3, Sb2Se3, and Bi2S3 sesquichalcogenides at hydrostatic pressures of up to 60 GPa. We explore the possibility that the C2/m, C2/c, the disordered Im-3m, and the I4/mmm phases observed in sesquichalcogenides with heavier cations, viz. Bi2Se3, Bi2Te3, and Sb2Te3, could also be formed in Sb2S3, Sb2Se3, and Bi2S3, as suggested from recent experiments. Our calculations show that the C2/c phase is not energetically favorable in any of the three compounds, up to 60 GPa. The C2/m system is also unfavorable for Sb2S3 and Bi2S3; however, it is energetically favorable with respect to the Pnma phase of Sb2Se3 above 10 GPa. Finally, the I4/mmm and the disordered body-centered cubic-type Im-3m structures are competitive in energy and are energetically more stable than the C2/m phase at pressures beyond 30 GPa. The dynamical stabilities of the Pnma, Im-3m, C2/m, and I4/mmm structural phases at high pressures are discussed for the three compounds.

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Deli, M. Leh, J. C. Jumas, E. Dichi, and D. Houphouet Boigny. "121Sb Mössbauer spectroscopy of 10mol% Sb2Te3 section of pseudo-ternary Sb2Se3–As2Se3–Sb2Te3 glasses." Journal of Non-Crystalline Solids 351, no. 27-29 (August 2005): 2329–32. http://dx.doi.org/10.1016/j.jnoncrysol.2005.06.011.

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9

Jeon, Hyung-Wook, Heon-Phil Ha, Dow-Bin Hyun, and Jae-Dong Shim. "Electrical and thermoelectrical properties of undoped Bi2Te3-Sb2Te3 and Bi2Te3-Sb2Te3-Sb2Se3 single crystals." Journal of Physics and Chemistry of Solids 52, no. 4 (January 1991): 579–85. http://dx.doi.org/10.1016/0022-3697(91)90151-o.

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10

Iaseniuc, O., M. Iovu, S. Rosoiu, M. Bardeanu, L. B. Enache, G. Mihai, O. Bordianu, et al. "Structural analysis of As-S-Sb-Te polycrystalline nanostructured semiconductors." Chalcogenide Letters 19, no. 11 (November 30, 2022): 841–46. http://dx.doi.org/10.15251/cl.2022.1911.841.

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The aim of this paper is to characterize the polycrystalline and vitreous phases in the As2S3-Sb2S3-Sb2Te3 systems using several techniques such as XRD, SEM, EDS, and micro-Raman spectroscopy. The As1.17S2.7Sb0.83Te0.40, As1.04S2.4Sb0.96Te0.60, As0.63S2.7Sb1.37Te0.30, and As0.56S2.4Sb1.44Te0.60 semiconductor chalcogenide bulk glasses were examined using Scanning Electron microscopy (SEM), Energy-Dispersive Spectroscopy (EDS), X-Ray diffraction (XRD) and micro-Raman analysis. The EDS quantitative and mapping analysis showed that for each investigated area, the identified elements were sulfur (S), arsenic (As), antimony (Sb) and tellurium (Te). These elements are present in constant atomic percentages on the entire sample, showing a good homogeneity of the samples. The study of samples by the above-mentioned methods showed the presence of crystalline phases and amorphous phases with the polycrystalline inclusions corresponding to the structural units AsS3, Sb2S3, and Sb2Те3.

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Yin, You, Wataru Matsuhashi, Koji Niiyama, Jie Yang, Tao Wang, Jingze Li, Yang Liu, and Qi Yu. "C–N-codoped Sb₂Te₃ chalcogenides for reducing writing current of phase-change devices." Applied Physics Letters 117, no. 15 (October 12, 2020): 153502. http://dx.doi.org/10.1063/5.0022467.

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In this work, doping C and codoping C and N into the Sb2Te3 traditional chalcogenide were investigated to reduce the writing current of the phase-change device using a chalcogenide as the active medium. No face-centered-cubic (FCC) structure was observed in the C-doped Sb2Te3 film, while it appeared after codoping C and N into Sb2Te3. The FCC crystallite size greatly reduced from 6.5 to 3.5–3.8 nm after codoping. In particular, the resistivity of FCC C–N codoped Sb2Te3 was about two orders of magnitude higher than that of Sb2Te3. The effect of the property of the chalcogenide on the writing current of the phase-change device was analyzed by the finite element method. The analysis showed that the writing current of the device using C–N-codoped Sb2Te3 as the active medium can significantly drop to about 1/8 of that of the Sb2Te3 based one.

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Li, Tiantian, Yijie Li, Yuteng Wang, Yuxin Liu, Yumeng Liu, Zhan Wang, Ruixia Miao, Dongdong Han, Zhanqiang Hui, and Wei Li. "Neuromorphic Photonics Based on Phase Change Materials." Nanomaterials 13, no. 11 (May 29, 2023): 1756. http://dx.doi.org/10.3390/nano13111756.

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Neuromorphic photonics devices based on phase change materials (PCMs) and silicon photonics technology have emerged as promising solutions for addressing the limitations of traditional spiking neural networks in terms of scalability, response delay, and energy consumption. In this review, we provide a comprehensive analysis of various PCMs used in neuromorphic devices, comparing their optical properties and discussing their applications. We explore materials such as GST (Ge2Sb2Te5), GeTe-Sb2Te3, GSST (Ge2Sb2Se4Te1), Sb2S3/Sb2Se3, Sc0.2Sb2Te3 (SST), and In2Se3, highlighting their advantages and challenges in terms of erasure power consumption, response rate, material lifetime, and on-chip insertion loss. By investigating the integration of different PCMs with silicon-based optoelectronics, this review aims to identify potential breakthroughs in computational performance and scalability of photonic spiking neural networks. Further research and development are essential to optimize these materials and overcome their limitations, paving the way for more efficient and high-performance photonic neuromorphic devices in artificial intelligence and high-performance computing applications.

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Chen, Guojie, Xiangye Li, Muhammad Abbas, Chen Fu, Zhenghua Su, Rong Tang, Shuo Chen, Ping Fan, and Guangxing Liang. "Tellurium Doping Inducing Defect Passivation for Highly Effective Antimony Selenide Thin Film Solar Cell." Nanomaterials 13, no. 7 (March 31, 2023): 1240. http://dx.doi.org/10.3390/nano13071240.

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Antimony selenide (Sb2Se3) is emerging as a promising photovoltaic material owing to its excellent photoelectric property. However, the low carrier transport efficiency, and detrimental surface oxidation of the Sb2Se3 thin film greatly influenced the further improvement of the device efficiency. In this study, the introduction of tellurium (Te) can induce the benign growth orientation and the desirable Sb/Se atomic ratio in the Te-Sb2Se3 thin film. Under various characterizations, it found that the Te-doping tended to form Sb2Te3-doped Sb2Se3, instead of alloy-type Sb2(Se,Te)3. After Te doping, the mitigation of surface oxidation has been confirmed by the Raman spectra. High-quality Te-Sb2Se3 thin films with preferred [hk1] orientation, large grain size, and low defect density can be successfully prepared. Consequently, a 7.61% efficiency Sb2Se3 solar cell has been achieved with a VOC of 474 mV, a JSC of 25.88 mA/cm2, and an FF of 64.09%. This work can provide an effective strategy for optimizing the physical properties of the Sb2Se3 absorber, and therefore the further efficiency improvement of the Sb2Se3 solar cells.

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Hanifehpour, Younes, and Sang Woo Joo. "Synthesis of Novel YbxSb2 − xTe3Hexagonal Nanoplates: Investigation of Their Physical, Structural, and Photocatalytic Properties." Journal of Nanomaterials 2014 (2014): 1–8. http://dx.doi.org/10.1155/2014/452659.

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Yb-doped Sb2Te3nanomaterials were synthesized by a coreduction method in hydrothermal condition. Powder X-ray diffraction patterns indicate that theYbxSb2−xTe3crystals (x=0.00–0.05) are isostructural with Sb2Te3. The cell parameteradecreases forYbxSb2−xTe3compounds upon increasing the dopant content (x), whilecincreases. Scanning electron microscopy and transmission electron microscopy images show that doping of Yb3+ions in the lattice of Sb2Te3produces different morphology. The electrical conductivity of Yb-doped Sb2Te3is higher than the pure Sb2Te3and increases with temperature. By increasing concentration of the Yb3+ions, the absorption spectrum of Sb2Te3shows red shifts and some intensity changes. In addition to the characteristic red emission peaks of Sb2Te3, emission spectra of doped materials show other emission bands originating fromf-ftransitions of the Yb3+ions. The photocatalytic performance of as-synthesized nanoparticles was investigated towards the decolorization of Malachite Green solution under visible light irradiation.

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Kim, Sang-il, Kang Yeol Lee, and Jae-Hong Lim. "Fabrication of PEDOT: PSS-PVP Nanofiber-Embedded Sb2Te3 Thermoelectric Films by Multi-Step Coating and Their Improved Thermoelectric Properties." Materials 13, no. 12 (June 24, 2020): 2835. http://dx.doi.org/10.3390/ma13122835.

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Antimony telluride thin films display intrinsic thermoelectric properties at room temperature, although their Seebeck coefficients and electrical conductivities may be unsatisfactory. To address these issues, we designed composite films containing upper and lower Sb2Te3 layers encasing conductive poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS)- polyvinylpyrrolidone(PVP) nanowires. Thermoelectric Sb2Te3/PEDOT:PSS-PVP/Sb2Te3(ED) (STPPST) hybrid composite films were prepared by a multi-step coating process involving sputtering, electrospinning, and electrodeposition stages. The STPPST hybrid composites were characterized by field-emission scanning electron microscopy, X-ray diffraction, ultraviolet photoelectron spectroscopy, and infrared spectroscopy. The thermoelectric performance of the prepared STPPST hybrid composites, evaluated in terms of the power factor, electrical conductivity and Seebeck coefficient, demonstrated enhanced thermoelectric efficiency over a reference Sb2Te3 film. The performance of the composite Sb2Te3/PEDOT:PSS-PVP/Sb2Te3 film was greatly enhanced, with σ = 365 S/cm, S = 124 μV/K, and a power factor 563 μW/mK.

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Zhang, Jie, Ningning Rong, Peng Xu, Yuchen Xiao, Aijiang Lu, Wenxiong Song, Sannian Song, Zhitang Song, Yongcheng Liang, and Liangcai Wu. "The Effect of Carbon Doping on the Crystal Structure and Electrical Properties of Sb2Te3." Nanomaterials 13, no. 4 (February 9, 2023): 671. http://dx.doi.org/10.3390/nano13040671.

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As a new generation of non-volatile memory, phase change random access memory (PCRAM) has the potential to fill the hierarchical gap between DRAM and NAND FLASH in computer storage. Sb2Te3, one of the candidate materials for high-speed PCRAM, has high crystallization speed and poor thermal stability. In this work, we investigated the effect of carbon doping on Sb2Te3. It was found that the FCC phase of C-doped Sb2Te3 appeared at 200 °C and began to transform into the HEX phase at 25 °C, which is different from the previous reports where no FCC phase was observed in C-Sb2Te3. Based on the experimental observation and first-principles density functional theory calculation, it is found that the formation energy of FCC-Sb2Te3 structure decreases gradually with the increase in C doping concentration. Moreover, doped C atoms tend to form C molecular clusters in sp2 hybridization at the grain boundary of Sb2Te3, which is similar to the layered structure of graphite. And after doping C atoms, the thermal stability of Sb2Te3 is improved. We have fabricated the PCRAM device cell array of a C-Sb2Te3 alloy, which has an operating speed of 5 ns, a high thermal stability (10-year data retention temperature 138.1 °C), a low device power consumption (0.57 pJ), a continuously adjustable resistance value, and a very low resistance drift coefficient.

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Lund, Henriette E., Klara Volckaert, Paulina Majchrzak, Alfred J. H. Jones, Marco Bianchi, Martin Bremholm, and Philip Hofmann. "Bulk band structure of Sb₂Te₃ determined by angle-resolved photoemission spectroscopy." Physical Chemistry Chemical Physics 23, no. 46 (2021): 26401–6. http://dx.doi.org/10.1039/d1cp04031f.

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Rb atoms were deposited on an Sb2Te3 surface. Based on ARPES measurements performed on Rb-doped as well as clean Sb2Te3 surfaces it was found that the absolute valence band maximum of Sb2Te3 is likely to be found near the bulk Γ point.

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Guha, Puspendu, Joon Young Park, Janghyun Jo, Yunyeong Chang, Hyeonhu Bae, Rajendra Kumar Saroj, Hoonkyung Lee, Miyoung Kim, and Gyu-Chul Yi. "Molecular beam epitaxial growth of Sb₂Te₃–Bi₂Te₃ lateral heterostructures." 2D Materials 9, no. 2 (January 31, 2022): 025006. http://dx.doi.org/10.1088/2053-1583/ac421a.

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Abstract We report on heteroepitaxial growth of Sb2Te3–Bi2Te3 lateral heterostructures using molecular beam epitaxy. The lateral heterostructures were fabricated by growing Bi2Te3 islands of hexagonal or triangular nanostructures with a typical size of several 100 nm and thickness of ∼15 nm on graphene substrates and Sb2Te3 laterally on the side facets of the nanostructures. Multiple-step processes with different growth temperatures were employed to grow the lateral heterostructures. Electron microscopy techniques indicate that the inner region is Bi2Te3 and the outer Sb2Te3 was formed laterally on the graphene in an epitaxial manner. The interface between Bi2Te3 and Sb2Te3 from planar and cross-sectional views was studied by the aberration-corrected (C s-corrected) high-angle annular dark-field scanning transmission electron microscope technique. The cross-sectional electron microscopy investigation shows no wetting layer of Sb2Te3 on Bi2Te3, corroborating perfect lateral heterostructure formation. In addition, we investigated the topological properties of Sb2Te3–Bi2Te3 lateral heterostructures using first-principles calculations.

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Serebryanaya, Nadezhda, Evgeny Tatyanin, Ivan Kruglov, Sergei Buga, Natalia Lvova, and Vladimir Blank. "Structure and properties of metastable phases of m-Sb2Te3and m-Bi0.4Sb1.6Te3." Acta Crystallographica Section A Foundations and Advances 70, a1 (August 5, 2014): C196. http://dx.doi.org/10.1107/s2053273314098039.

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The m-Sb2Te3 and m-Bi0.4Sb1.6Te3 metastable phases were found after high-pressure (4 GPa) and high-temperature (873 K) treatment of initial rhombohedral Sb2Te3 and Bi0.4Sb1.6Te3. These metastable phases crystallize in the same structure because they have almost identical diffraction pattern. The crystal structure of metastable phases, determined by the powder X-ray and electron diffraction methods, is monoclinic (C2/m). The cell dimensions of m-Sb2Te3 are: a=15.64(8) Å, b=4.282(8) Å, c=9.38(2) Å, β=89.700(5). The reliability factors are: RBragg=0.12, RF=0.13, χ2=4.35. There are two different types of Sb atoms: with seven-coordinated by Te atoms for Sb1 and for Sb2 – eight-coordinated by Te atoms forming composite coordination polyhedra. A comparison with the structure of pressure-induced β-Sb2Te3-phase, observed in situ under high pressure, has been made. Pressure-induced β-Sb2Te3-phase can be retained at ambient conditions as m-Sb2Te3. The annealing of m-Sb2Te3 and m-Bi0.4Sb1.6Te3 samples at 673 K during 2, 5 hours returns their structures to initial symmetry. This fact was supported by the exothermal peak found by differential scanning calorimetry. The ab initio study verified metallic character of quenched phases: the energy spectrum is consistent with the proposed monoclinic structure with short interlayer distances. The electrical resistivity and the Hall coefficient in the temperature range of T = 1.8–450 K have been measured. m-Sb2Te3 phase is superconductive at T < 2K.

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Pan, Xujie, Jing He, Lei Gao, and Handong Li. "Self-Filtering Monochromatic Infrared Detectors Based on Bi2Se3 (Sb2Te3)/Silicon Heterojunctions." Nanomaterials 9, no. 12 (December 12, 2019): 1771. http://dx.doi.org/10.3390/nano9121771.

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This paper focuses on the photoelectric properties of heterostructures formed by surface-modified Si (111) and hexagonal, quintuple-layered selenides (Bi2Se3 and Sb2Te3). It was shown that H-passivated Si (111) can form robust Schottky junctions with either Bi2Se3 or Sb2Te3. When back illuminated (i.e., light incident towards the Si side of the junction), both the Bi2Se3/Si and Sb2Te3/Si junctions exhibited significant photovoltaic response at 1030 nm, which is right within the near-infrared (NIR) light wavelength range. A maximum external quantum efficiency of 14.7% with a detection response time of 2 ms for Bi2Se3/Si junction, and of 15.5% with a 0.8 ms response time for the Sb2Te3/Si junction, were achieved. Therefore, utilizing Si constituents as high-pass filters, the Bi2Se3 (Sb2Te3)/Si heterojunctions can serve as monochromatic NIR photodetectors.

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Sumi, Satoshi, Yuichiro Hirano, Hiroyuki Awano, and Junji Tominaga. "Ferromagnetic Resonance of a [GeTe/Sb2Te3]6/Py Superlattice." Magnetochemistry 7, no. 12 (November 26, 2021): 156. http://dx.doi.org/10.3390/magnetochemistry7120156.

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A [GeTe/Sb2Te3] superlattice is known as a topological insulator. It shows magnetic responses such as magneto-optical effect, magneto resistance, magneto capacitance, and so on. We have reported that [GeTe/Sb2Te3] superlattice film has a large spin–orbit interaction using a spin pumping method of a [GeTe/Sb2Te3]/Py superlattice. In this paper, we demonstrate a ST-FMR (spin transfer torque ferromagnetic resonance) of the [GeTe/Sb2Te3]6/Py superlattice, compared with a W/Py bilayer. The superlattice film showed a large resonance signal with a symmetric component. The ratio of symmetric components (S) to anti-symmetric (A) components (S/A) was 1.4, which suggests that the superlattice exhibits a large spin Hall angle. The [GeTe/Sb2Te3] superlattice will be suitable as a hetero-interface material required for high performance spintronics devices in future.

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Mamedova, N. "PHASE EQUILIBRIUM IN THE Sb2Te3-HoTe3 SYSTEM." East European Scientific Journal 3, no. 10(74) (November 22, 2021): 30–33. http://dx.doi.org/10.31618/essa.2782-1994.2021.3.74.141.

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The phase equilibrium of the Sb2Te3-HoTe3 system was studied by means of physical and chemical analysis methods DTA, RFA, MQA, as well as density and microhardness measurements, and its phase diagram was constructed. It has been determined that the Sb2Te3-HoTe3 system is a partial quasi-binary cross section of the ternary Bi-Ho-Te system. The system undergoes a process of eutectic equilibrium and peritectic transformation. In the Sb2Te3-HoTe3 system at room temperature, of the based Sb2Te3 solid solutions extend to 4.5 mol % and of the based HoTe3 solid solutions have practically not been established.

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Seyidzade, А. E., A. A. Aghayeva, E. N. Orujlu, and S. Z. Imamaliyeva. "THERMODYNAMIC PROPERTIES OF Sb2Te3-BASED SOLID SOLUTIONS IN THE SnTe–Sb2Te3 SYSTEM." Azerbaijan Chemical Journal, no. 1 (March 15, 2022): 83–88. http://dx.doi.org/10.32737/0005-2531-2022-1-83-88.

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The SnTe–Sb2Te3 system was investigated by using EMF measurements of reversible concentration cells relative to the SnTe electrode in the 300–400 K temperature range. The formation of solid solutions (up to 20 mol%) based on Sb2Te3 was confirmed. Based on EMF measurements, the equations of the temperature dependences of the EMF for solid solutions based on Sb2Te3 with compositions of 5, 10, and 20 mol% SnTe were obtained and these results were furtherly used to calculate the partial thermodynamic functions of SnTe in alloys. The standard thermodynamic functions of the formation of solid solutions of the above compositions were calculated by graphical integration of the Gibbs-Duhem equation along the SnTe–Sb2Te3 section

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Jafarov, Yasin I., Mahammad B. Babanly, Аndrei V. Shevelkov, and Ziya S. Aliev. "Experimental investigation of the 3Tl2Se+Sb2Te3↔3Tl2Te+Sb2Se3 phase diagram." Journal of Alloys and Compounds 555 (April 2013): 184–92. http://dx.doi.org/10.1016/j.jallcom.2012.11.202.

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25

Amin, F. A. A., A. S. S. Al-Ghaffari, M. A. A. Issa, and A. M. Hassib. "Thermoelectric properties of fine grained (75% Sb2Te3-25% Bi2Te3)p-type and (90% Bi2Te3-5% Sb2Te3-5% Sb2Se3)n-type alloys." Journal of Materials Science 27, no. 5 (1992): 1250–54. http://dx.doi.org/10.1007/bf01142032.

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Wei, Fen Fen, Tao Kong, Lin Shi, Rong Huang, Jie Zhang, and Guo Sheng Cheng. "Investigation of the Properties of Al Incorporated into Sb₂Te₃ Phase Change Material." Advanced Materials Research 950 (June 2014): 7–12. http://dx.doi.org/10.4028/www.scientific.net/amr.950.7.

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We report that crystallization property of amorphous Sb2Te3 can be significantly improved via Al doping. However, the effect of Al on the structure and electrical properties of crystalline Sb2Te3 is not clear, which is valuable for phase change memory. In this work, we find that Al addition could increase the crystallization temperature and change the structure. The results show that both nucleation and growth of crystallite are suppressed by Al doping. Based on ab initio calculation, we have validated the formations of Al-Sb and Al-Te bonds in doped films and the effect of Al on the structure and properties of crystalline Sb2Te3. Especially for 10 at% Al doped Sb2Te3 (Al-Sb-Te) film, which exhibits better thermal stability and might be a good candidate material for phase change memory.

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Степанов, Н. П., В. Ю. Наливкин, А. К. Гильфанов, А. А. Калашников, and Е. Н. Трубицына. "Температурные зависимости электропроводности и магнитной восприимчивости кристаллов твердых растворов Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=--Bi-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-." Физика и техника полупроводников 55, no. 12 (2021): 1162. http://dx.doi.org/10.21883/ftp.2021.12.51700.17.

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Solid solutions Bi2Te3-Sb2Te3 continue to be the subject of numerous and versatile experimental studies due to their practical importance for thermoelectric materials science. In this regard, the problem of studying the regularities of changes in the state of the electronic system of these semiconductors from composition and temperature remains urgent. This paper presents the results of studying the temperature dependences of the magnetic susceptibility of Bi2Te3-Sb2Te3 crystals containing 10, 25, 40, 50, 60 mol. % Sb2Te3. The correlation of the behavior of the temperature dependences of the magnetic susceptibility and electrical conductivity is analyzed.

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Vieira, Eliana, Joana Figueira, Ana Lucia Pires, José Grilo, Manuel Fernando Silva, André Miguel Pereira, and Luís Miguel Goncalves. "Bi2Te3 and Sb2Te3 Thin Films with Enhanced Thermoelectric Properties for Flexible Thermal Sensors." Proceedings 2, no. 13 (December 11, 2018): 815. http://dx.doi.org/10.3390/proceedings2130815.

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The influence of substrate type in boosting thermoelectric properties of co-evaporated Bi2Te3 and Sb2Te3 films (with 400 nm-thick) is here reported. Optimized power factor values are 2.7 × 10−3 W K−2 m−1 and 1.4 × 10−3 W K−2 m−1 for flexible Bi2Te3 and Sb2Te3 films, respectively. This is an important result as it is at least 2 times higher than the power factor found in the literature for flexible Bi2Te3 and Sb2Te3 films. A flexible infrared thermopile sensor was developed with high detectivity (2.50 × 107 cm √HzW−1).

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Kim, Jeong-Hun, Yong-Chul Jung, Sang-Hee Suh, and Jin-Sang Kim. "MOCVD of Bi2Te3 and Sb2Te3 on GaAs Substrates for Thin-Film Thermoelectric Applications." Journal of Nanoscience and Nanotechnology 6, no. 11 (November 1, 2006): 3325–28. http://dx.doi.org/10.1166/jnn.2006.002.

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Metal organic chemical vapour deposition (MOCVD) has been investigated for growth of Bi2Te3 and Sb2Te3 films on (001) GaAs substrates using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. The surface morphologies of Bi2Te3 and Sb2Te3 films were strongly dependent on the deposition temperatures as it varies from a step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration over the 240 K in Bi2Te3 films. The high Seebeck coefficient (of −160 μVK−1 for Bi2Te3 and + 110 μVK−1 for Sb2Te3 films, respectively) and good surface morphologies of these materials are promising for the fabrication of a few nm thick periodic Bi2Te3/Sb2Te3 super lattice structures for thin film thermoelectric device applications.

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30

Kang, Shin-young, Soo-min Jin, Ju-young Lee, Dae-seong Woo, Tae-hun Shim, In-ho Nam, Jea-gun Park, Yuji Sutou, and Yun-heub Song. "Bidirectional Electric-Induced Conductance Based on GeTe/Sb2Te3 Interfacial Phase Change Memory for Neuro-Inspired Computing." Electronics 10, no. 21 (November 4, 2021): 2692. http://dx.doi.org/10.3390/electronics10212692.

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Corresponding to the principles of biological synapses, an essential prerequisite for hardware neural networks using electronics devices is the continuous regulation of conductance. We implemented artificial synaptic characteristics in a (GeTe/Sb2Te3)16 iPCM with a superlattice structure under optimized identical pulse trains. By atomically controlling the Ge switch in the phase transition that appears in the GeTe/Sb2Te3 superlattice structure, multiple conductance states were implemented by applying the appropriate electrical pulses. Furthermore, we found that the bidirectional switching behavior of a (GeTe/Sb2Te3)16 iPCM can achieve a desired resistance level by using the pulse width. Therefore, we fabricated a Ge2Sb2Te5 PCM and designed a pulse scheme, which was based on the phase transition mechanism, to compare to the (GeTe/Sb2Te3)16 iPCM. We also designed an identical pulse scheme that implements both linear and symmetrical LTP and LTD, based on the iPCM mechanism. As a result, the (GeTe/Sb2Te3)16 iPCM showed relatively excellent synaptic characteristics by implementing a gradual conductance modulation, a nonlinearity value of 0.32, and 40 LTP/LTD conductance states by using identical pulse trains. Our results demonstrate the general applicability of the artificial synaptic device for potential use in neuro-inspired computing and next-generation, non-volatile memory.

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Марченко, А. В., Е. И. Теруков, Ф. С. Насрединов, Ю. А. Петрушин, and П. П. Серегин. "Локальная структура аморфных пленок (GeTe)-=SUB=-x-=/SUB=-(Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-)." Журнал технической физики 92, no. 11 (2022): 1678. http://dx.doi.org/10.21883/jtf.2022.11.53441.186-22.

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By the method of Mössbauer spectroscopy on the isotope 119Sn, it was shown that tetravalent germanium atoms in amorphous films (GeTe)x(Sb2Te3) (where x = 0.5, 1, 2, 3) form a tetrahedral system of chemical bonds, and in their local environment there are mainly tellurium atoms. In crystalline films (GeTe)x(Sb2Te3) is divalent hexoordinated germanium at positions 4 b of the NaCl type crystal lattice. By the meth-od of Mössbauer spectroscopy on 121Sb and 125Te atoms, it was shown that the amorphization of (GeTe)x(Sb2Te3) films does not change the lo-cal environment of antimony and tellurium atoms.

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32

Kolobov, A. V., P. Fons, Y. Saito, and J. Tominaga. "Reconfiguration of van der Waals Gaps as the Key to Switching in GeTe/Sb2Te3 Superlattices." MRS Advances 3, no. 57-58 (2018): 3413–18. http://dx.doi.org/10.1557/adv.2018.444.

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AbstractGeTe/Sb2Te3 superlattices, also known as interfacial phase-change memory (iPCM), exhibit significantly faster switching and are characterized by much lower power consumption and longer data retention compared to devices based on alloyed materials. In early work, the superior performance of iPCM was linked to a crystal-crystal transition between the SET and RESET states. As the primary mechanism, a change in the stacking order of Ge and Te planes within a GeTe block was suggested. Subsequent STEM studies on epitaxial GeTe/Sb2Te3 superlattices demonstrated that the GeTe blocks were not located between Sb2Te3 quintuple layers but, were incorporated inside the latter, providing a serious challenge to the early explanation. In this work, we demonstrate that changes associated with the reconstruction of the SbTe terminating layers nearest to van der Waals gap leads to a pronounced change in the density of states and can serve as an alternative explanation for a large property contrast between the SET and RESET states in GeTe/Sb2Te3 superlattices.

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33

Ettenberg, M. H., J. R. Maddux, P. J. Taylor, W. A. Jesser, and F. D. Rosi. "Improving yield and performance in pseudo-ternary thermoelectric alloys (Bi2Te3)(Sb2Te3)(Sb2Se3)." Journal of Crystal Growth 179, no. 3-4 (August 1997): 495–502. http://dx.doi.org/10.1016/s0022-0248(97)00133-4.

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Taylor, P. J., J. R. Maddux, W. A. Jesser, and F. D. Rosi. "Room-temperature anisotropic, thermoelectric, and electrical properties of n-type (Bi2Te3)90 (Sb2Te3)5 (Sb2Se3)5 and compensated p-type (Sb2Te3)72 (Bi2Te3)25 (Sb2Se3)3 semiconductor alloys." Journal of Applied Physics 85, no. 11 (June 1999): 7807–13. http://dx.doi.org/10.1063/1.370589.

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35

Aghazade, A. I. "PHASE EQUILIBRIA OF THE PbBi2Te4–"PbSb2Te4" SECTION OF THE PbTe–Bi2Te3–Sb2Te3 SYSTEM AND SOME PROPERTIES OF THE SOLID SOLUTIONS." Azerbaijan Chemical Journal, no. 4 (December 12, 2020): 53–59. http://dx.doi.org/10.32737/0005-2531-2020-4-53-59.

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PbTe–Bi2Te3–Sb2Te3 system has been studied by DTA and X-ray diffraction methods along the PbBi2Te4 – "PbSb2Te4" section. It was found that the compound of the composition PbSb2Te4, specified in the literature does not exist. On the basis of the latter a wide (more than 50 mol%) area of solid solution (γ) was detected. By using obtained experimental results, a fragment of the solid-phase equilibrium diagram of the PbTe–Bi2Te3–Sb2Te3 system was constructed and boundaries of the heterogeneous areas α+γ, α+β, α+β+γ (α- and β- are solid solutions based on PbTe and Sb2Te3, respectively) have been determined

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36

Stepanov N. P., Nalivkin V. Y., Gilfanov A. K., Kalashnikov A. A., and Trubitsyna E. N. "Temperature dependences of electrical conductivity and magnetic susceptibility of crystals of solid solution Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=--Bi-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-." Semiconductors 55, no. 14 (2022): 2127. http://dx.doi.org/10.21883/sc.2022.14.53857.17.

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Solid solutions Bi2Te3-Sb2Te3 continue to be the subject of numerous and versatile experimental studies due to their practical importance for thermoelectric materials science. In this regard, the problem of studying the regularities of changes in the state of the electronic system of these semiconductors from composition and temperature remains urgent. This paper presents the results of studying the temperature dependences of the magnetic susceptibility of Bi2Te3-Sb2Te3 crystals containing 10, 25, 40, 50, 60 mol.% Sb2Te3. The correlation of the behavior of the temperature dependences of the magnetic susceptibility and electrical conductivity is analyzed. Keywords: magnetic susceptibility, diamagnetic susceptibility, temperature dependence of electrical conductivity.

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37

Marchenko A.V., Terukov E.I., Nasredinov F. S., Petrushin Yu. A., and Seregin P. P. "Local structure of amorphous (GeTe)-=SUB=-x-=/SUB=-(Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-) films." Technical Physics 67, no. 11 (2022): 1450. http://dx.doi.org/10.21883/tp.2022.11.55175.186-22.

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By the method of Messbauer spectroscopy on the isotope 119Sn, it was shown that tetravalent germanium atoms in amorphous films (GeTe)x(Sb2Te3) (where x=0.5, 1, 2, 3) form a tetrahedral system of chemical bonds, and in their local environment there are mainly tellurium atoms. In crystalline films (GeTe)x(Sb2Te3) is divalent hexoordinated germanium at positions 4 b of the NaCl type crystal lattice. By the meth-od of Messbauer spectroscopy on 121Sb and 125Te atoms, it was shown that the amorphization of (GeTe)x(Sb2Te3) films does not change the lo-cal environment of antimony and tellurium atoms Keywords: amorphous films, phase memory, Messbauer spectroscopy.

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38

Andzane, Jana, Krisjanis Buks, Juris Bitenieks, Lasma Bugovecka, Artis Kons, Remo Merijs-Meri, Janis Svirksts, Janis Zicans, and Donats Erts. "p-Type PVA/MWCNT-Sb2Te3 Composites for Application in Different Types of Flexible Thermoelectric Generators in Combination with n-Type PVA/MWCNT-Bi2Se3 Composites." Polymers 14, no. 23 (November 25, 2022): 5130. http://dx.doi.org/10.3390/polym14235130.

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This work is devoted to the fabrication of p-type polyvinyl alcohol (PVA)-based flexible thermoelectric composites using multiwall carbon nanotubes-antimony telluride (MWCNT-Sb2Te3) hybrid filler, the study of the thermoelectrical and mechanical properties of these composites, and the application of these composites in two types (planar and radial) of thermoelectric generators (TEG) in combination with the previously reported PVA/MWCNT-Bi2Se3 flexible thermoelectric composites. While the power factors of PVA/MWCNT-Sb2Te3 and PVA/MWCNT-Bi2Se3 composites with 15 wt.% filler were found to be similar, the PVA/MWCNT-Sb2Te3 composite with 25 wt.% filler showed a ~2 times higher power factor in comparison with the PVA/MWCNT-Bi2Se3 composites with 30 wt.% filler, which is attributed to its reduced electrical resistivity. In addition, developed PVA/MWCNT-Sb2Te3 composites showed a superior mechanical, electrical, and thermoelectric stability during 100 consequent bending cycles down to a 3 mm radius, with insignificant fluctuations of the resistance within 0.01% of the initial resistance value of the not bent sample. Demonstrated for the first time, 2-leg TEGs composed from p-type PVA/MWCNT-Sb2Te3 and n-type PVA/MWCNT-Bi2Se3 composites showed a stable performance under different external loads and showed their potential for applications involving low temperature gradients and power requirements in the range of nW.

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Jafarov, Yasin I., Mahammad B. Babanly, Imamaddin R. Amiraslanov, Vaqif A. Gasimov, Аndrei V. Shevelkov, and Ziya S. Aliev. "Study of the 3Tl2S+Sb2Te3↔3Tl2Te+Sb2S3 reciprocal system." Journal of Alloys and Compounds 582 (January 2014): 659–69. http://dx.doi.org/10.1016/j.jallcom.2013.07.141.

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40

Krishna Moorthy, P. A., and G. K. Shivakumar. "Growth of Sb2Te3 films." Journal of Materials Science Letters 4, no. 4 (April 1985): 409–12. http://dx.doi.org/10.1007/bf00719731.

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Rajasekar, K., L. Kungumadevi, A. Subbarayan, and R. Sathyamoorthy. "Thermal sensors based on Sb2Te3 and (Sb2Te3)70(Bi2Te3)30 thin films." Ionics 14, no. 1 (September 6, 2007): 69–72. http://dx.doi.org/10.1007/s11581-007-0146-3.

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42

Орлов, В. Г., and Г. С. Сергеев. "Особенности распределения электронной плотности в теллуриде сурьмы Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-." Физика твердого тела 59, no. 7 (2017): 1278. http://dx.doi.org/10.21883/ftt.2017.07.44587.454.

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На основе результатов расчетов электронной зонной структуры полупроводников Sb2Te3, Ge, Te и полуметалла Sb, выполненных методом функционала электронной плотности, найдены параметры критических точек в распределении электронной плотности (максимумов, минимумов и седловых точек) в кристаллической решетке вышеуказанных веществ. Полученные данные использованы для анализа природы химической связи в Sb2Te3. Работа выполнена при поддержке гранта РФФИ N 16-32-00107. DOI: 10.21883/FTT.2017.07.44587.454

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Tahsin, Sadiya, and Helmut Baumgart. "Seebeck Analysis of ALD Synthesized Thermoelectric Sb₂Te₃ Thin Films." ECS Meeting Abstracts MA2022-02, no. 31 (October 9, 2022): 1127. http://dx.doi.org/10.1149/ma2022-02311127mtgabs.

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Thermoelectric materials have attracted significant attention due to their potential application in power generation and refrigeration systems, because they can convert thermal energy into electric energy from waste heat recovery. Thin thermoelectric films can be used to create thermoelectric generators, where the power they create does not result in any additional emissions. PbTe, PbSe and Sb2Te3, Bi2Te3 present excellent choices for thermoelectric energy harvesting devices. Among these, Sb2Te3 and its derivatives have high Seebeck coefficient and good electrical conductivity, which make these the most promising p-type material for low temperature thermoelectric device. The high figure of merit ZT values at relatively low temperature make these exceptional thermoelectric materials. This study investigates Seebeck coefficient measurements of Sb2Te3 thin film synthesized by Atomic Layer Deposition (ALD) technology using a Veeco Nanotech thermal ALD reactor. For the ALD synthesis of Sb2Te3 we used SbCl3 as precursor1 and (Si(CH3)3)2Te Bis(trimethylsilyl)telluride as precursor 2. Antimony trichloride Sb2Te3 is a solid ALD precursor requiring preheating to the melting temperature around 73 ℃ to generate sufficient vapor pressure. A typical film morphology of ALD Sb2Te3 is shown in the SEM micrograph of Fig.1. The efficiency of thermoelectric materials is expressed by the dimensionless thermoelectric figure of merit, ZT = S2σT/ k, where S is the Seebeck coefficient, σ is the electrical conductivity, and k is the thermal conductivity. Because the crucial Seebeck coefficient factors directly into the equation by the power of two to determine ZT and the power factor, it is imperative to optimize the thermoelectric thin film material for maximum Seebeck coefficient. Maximizing the figure of merit ZT is challenging because in thermoelectric materials the quantities S, σ and κ are interrelated in such a way as to make independent control of these variables to increase ZT not straightforward. An increase in S typically results in a decrease of σ. Following the Wiedeman- Franz law a decrease in σ produces a decrease in the electronic contribution to κ complicating matters. Figure 1

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Svechnikova, T. E., L. E. Shelimova, P. P. Konstantinov, M. A. Kretova, E. S. Avilov, V. S. Zemskov, C. Stiewe, A. Zuber, and E. Muller. "Thermoelectric Properties of (Bi2Te3)1 − x − y (Sb2Te3) x (Sb2Se3) y Single Crystals." Inorganic Materials 41, no. 10 (October 2005): 1043–49. http://dx.doi.org/10.1007/s10789-005-0258-y.

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Aliyev, F. R., E. N. Orujlu, and D. M. Babanly. "THERMODYNAMIC PROPERTIES OF THE Sb2Te3 COMPOUND." Azerbaijan Chemical Journal, no. 4 (December 8, 2021): 53–59. http://dx.doi.org/10.32737/0005-2531-2021-4-53-59.

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Thermodynamic properties of the Sb2Te3 compound were studied by measuring electromotive force (EMF) with a liquid electrolyte in the temperature range of 300-450 K. The partial molar functions of antimony in alloys and the corresponding standard integral thermodynamic functions of the Sb2Te3 compound were calculated for the first time based on the EMF measurements under standard conditions. Comparative analysis of obtained results with literature data was carried out

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46

Bugovecka, Lasma, Krisjanis Buks, Jana Andzane, Annija Dinija Miezubrale, Juris Bitenieks, Janis Zicans, and Donats Erts. "Positive and Negative Changes in the Electrical Conductance Related to Hybrid Filler Distribution Gradient in Composite Flexible Thermoelectric Films Subjected to Bending." Nanomaterials 13, no. 7 (March 29, 2023): 1212. http://dx.doi.org/10.3390/nano13071212.

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P-type multiwalled carbon nanotubes (MWCNTs), as well as heterostructures fabricated by direct deposition of inorganic thermoelectric materials as antimony and bismuth chalcogenides on MWCNT networks are known as perspective materials for application in flexible thermoelectric polymer-based composites. In this work, the electrical response of three types of Sb2Te3-MWCNT heterostructures-based flexible films—free standing on a flexible substrate, encapsulated in polydimethylsiloxane (PDMS), and mixed in polyvinyl alcohol (PVA) is studied in comparison with the flexible films prepared by the same methods using bare MWCNTs. The electrical conductance of these films when each side of it was subsequently subjected to compressive and tensile stress during the film bending down to a 3 mm radius is investigated in relation to the distribution gradient of Sb2Te3-MWCNT heterostructures or bare MWCNTs within the film. It is found that all investigated Sb2Te3-MWCNT films exhibit a reversible increase in the conductance in response to the compressive stress of the film side with the highest filler concentration and its decrease in response to the tensile stress. In contrast, free-standing and encapsulated bare MWCNT networks with uniform distribution of nanotubes showed a decrease in the conductance irrelevant to the bending direction. In turn, the samples with the gradient distribution of the MWCNTs, prepared by mixing the MWCNTs with PVA, revealed behavior that is similar to the Sb2Te3-MWCNT heterostructures-based films. The analysis of the processes impacting the changes in the conductance of the Sb2Te3-MWCNT heterostructures and bare MWCNTs is performed. The proposed in this work bending method can be applied for the control of the uniformity of distribution of components in heterostructures and fillers in polymer-based composites.

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Yong, Ho, Sekwon Na, Jun-Gu Gang, Seong-Jae Jeon, Seungmin Hyun, and Hoo-Jeong Lee. "Effects of Sb Content (x) on (Bi1−xSbx)2Te3 Thermoelectric Thin Film Deposited by Effusion Cell Evaporator." Journal of Nanoscience and Nanotechnology 15, no. 10 (October 1, 2015): 8251–56. http://dx.doi.org/10.1166/jnn.2015.11439.

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This paper investigates the effects of the Sb content (х) on (Bi1−xSbx–2Te3 thermoelectric films with х changing widely from 0 (Sb2Te3) to 1 (Bi2 Te3). First, the XRD analysis discloses that with the Sb content (x) increasing, the phase changed gradually from Bi2Te3 to Sb2Te3 as Sb atoms replaced substitutionally Bi atoms. Further microstructure analysis reveals that an extensive grain growth occurred during post-annealing for the samples with high Sb contents. According to the measurement of electrical and thermoelectric properties, the polarity of the charge carrier and Seebeck coefficient switched n-type to p-type in the range of x = 0.45∼0.63. For the n-type samples, the power factor is highest when x = 0.18 around 46.01 μW/K2 whereas Sb2Te3, for the p-type samples, shows the highest value, 62.48 μW/K2cm.

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Feng, Hongqing, Chunyang Wu, Peng Zhang, Jianli Mi, and Mingdong Dong. "Facile hydrothermal synthesis and formation mechanisms of Bi2Te3, Sb2Te3 and Bi2Te3–Sb2Te3 nanowires." RSC Advances 5, no. 121 (2015): 100309–15. http://dx.doi.org/10.1039/c5ra20014h.

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A facile and “green” glucose-assisted hydrothermal method is proposed to synthesize Bi₂Te₃, Sb₂Te₃ and Bi₂Te₃–Sb₂Te₃ nanowires.

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Kouamé, N'dri, Joseph Sei, Denise Houphouët-Boigny, Gabrielle Kra, Jean-Claude Jumas, and Josette Olivier-Fourcade. "Propriétés thermiques et optiques des verres du système Sb2S3–As2S3–Sb2Te3." Comptes Rendus Chimie 10, no. 6 (June 2007): 498–501. http://dx.doi.org/10.1016/j.crci.2007.02.014.

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Kumar, Arun, Raimondo Cecchini, Claudia Wiemer, Valentina Mussi, Sara De Simone, Raffaella Calarco, Mario Scuderi, Giuseppe Nicotra, and Massimo Longo. "Phase Change Ge-Rich Ge–Sb–Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition." Nanomaterials 11, no. 12 (December 10, 2021): 3358. http://dx.doi.org/10.3390/nano11123358.

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Abstract:

Ge-rich Ge–Sb–Te compounds are attractive materials for future phase change memories due to their greater crystallization temperature as it provides a wide range of applications. Herein, we report the self-assembled Ge-rich Ge–Sb–Te/Sb2Te3 core-shell nanowires grown by metal-organic chemical vapor deposition. The core Ge-rich Ge–Sb–Te nanowires were self-assembled through the vapor–liquid–solid mechanism, catalyzed by Au nanoparticles on Si (100) and SiO2/Si substrates; conformal overgrowth of the Sb2Te3 shell was subsequently performed at room temperature to realize the core-shell heterostructures. Both Ge-rich Ge–Sb–Te core and Ge-rich Ge–Sb–Te/Sb2Te3 core-shell nanowires were extensively characterized by means of scanning electron microscopy, high resolution transmission electron microscopy, X-ray diffraction, Raman microspectroscopy, and electron energy loss spectroscopy to analyze the surface morphology, crystalline structure, vibrational properties, and elemental composition.

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Journal articles on the topic 'Sb2Te3'

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